Symbols A - UWECE · ALPHA model parameter 12-34.ALTER blocks statements in 3-34.LIB and .DEL LIB...

7/23/98 Star-Hspice Manual, Release 1998.2 I-1

Index

Symbols

!GND node 3-31$ comment delimiter 3-28$installdir installation directory 3-56* comment delimiter 3-28

A

A model parameter 12-34A2D

function 5-46model parameter 5-46See also analog to digital, mixed

mode.a2d file 4-3, 4-4, 5-46A2D function 23-4ABS element parameter 23-20, 23-26,

23-31, 23-35abs(x) function 10-6ABSH option 6-23, 7-11, 9-7ABSI option 6-22, 6-23

KCLTEST setting 6-17ABSMOS option 6-22, 6-24

KCLTEST setting 6-17absolute

power function 10-6

value function 10-6absolute value parameter 23-20, 23-26,

23-31, 23-35ABSTOL option 6-14ABSV option 6-22, 7-11, 7-14ABSVAR option 7-11, 7-13, 7-19ABSVDC option 6-24AC

magnitude calculation 9-7optimization 9-4output calculation 9-7output calculation method 9-7phase calculation 9-7resistance 9-3

effective value 12-6element parameters 12-3transmission lines 22-22

small-signal analysis parameter 5-3AC resistance parameter 23-91.AC statement

external data 3-38.ac# file 4-2, 4-4accessing customer support viACCT option 3-47, 4-6accuracy

and simulation time 6-22

A Index

I-2 Star-Hspice Manual, Release 1998.2 7/23/98

tolerance 6-21ACCURATE option 7-11, 7-19ACM

area calculation method 15-3model parameter 7-20, 15-3parameter 16-7, 16-29

acos(x) function 10-6ACOUT option 9-7, 9-9–9-10admittance

AC input 9-13AC output 9-13Y parameters 9-8

AF model parameter 9-17AGAUSS

keyword 10-41Monte Carlo function 10-16

ALFA .FFT parameter 26-7algebraic

models 7-20algebraic equations, example 20-12algorithms

Damped Pseudo Transient algorithm6-34

DVDT 7-9, 7-11, 7-25GEAR 7-9, 7-21integration 7-21iteration count 7-25local truncation error 7-10, 7-14, 7-

25timestep 7-13

Muller 25-3pivoting 6-18timestep control 7-9, 7-25, 7-27transient analysis timestep 7-9

TRAP 7-9trapezoidal integration 7-10, 7-21

ALL keyword 6-8, 6-12ALPHA model parameter 12-34.ALTER blocks

statements in 3-34.LIB and .DEL LIB in 10-30.OPTION statements 10-31.PARAM statements in 10-30and .INCLUDE statements 10-31changing subcircuits in 10-30element parameters 10-31input listing 10-31model parameters 10-31titles 10-31variables in 10-30

.ALTER statement 3-34, 10-30multiple .ALTER’s 10-31with .DEL LIB 10-31

AM source function 5-18carrier frequency 5-18delay time 5-18modulation frequency 5-18offset constant 5-18signal amplitude 5-18

AMD models 16-4, 16-5AMP model parameter 23-83amplifiers

pole/zero analysis 25-11, 25-13amplitude modulation source function 5-

18amplitude modulator, behavioral 23-79Analog Artist interface 3-47

output data format 3-54

Index A


See also Artistanalog behavioral modeling 23-4analog to digital conversion 23-39analog to digital output 5-49analysis

accuracy 6-21–6-22data driven 10-2, 10-3, 20-9distortion 9-14initialization 6-3Monte Carlo 10-3, 10-39–10-59network 9-19optimization 11-5statistical 10-33–10-59Taguchi 10-2transfer function (.TF) 23-63worst case 10-2, 10-33–10-59yield 10-2

arccos(x) function 10-6arcsin(x) function 10-6arctan(x) function 10-6area

JFET and MESFETequations 15-26–15-28units 15-26, 15-28

calculation methodsee ACM

arithmetic operators 10-6ARTIST option 3-47, 3-54ASCII output data 3-48, 3-51, 3-53, 3-54ASIC

device libraries 3-57vendor libraries 3-57

asin(x) function 10-6ASPEC

compatibility 3-48option 3-48

ASPEC compatibility 16-2, 16-40ASPEC-AMI model 16-4asterisk comment delimiter 3-28asymptotic waveform evaluation 27-2

transfer function 27-33AT keyword 4-22AT1 model parameter 22-38atan(x) function 10-6ATEM characterization system 3-56ATLEN model parameter 22-38AUNIF


AURORA user’s group viautoconvergence 6-28

algorithm 6-26disabling 6-26

automatic model selectionfailure 19-3multisweep or .TEMP effect 19-4See also model selection

AUTOSTOP option 7-14, 7-18, 20-10,23-91

AV model parameter 23-84AV1K model parameter 23-84Avant! web site viAVD model parameter 23-84average deviation 10-3average value, measuring 4-23AVG keyword 4-24AWE

B Index


see asymptotic waveform evaluation

B

B# node name in CSOS 3-33backslash continuation character 3-18,

10-5double 10-5in input files 3-18

BADCHR option 3-18bandwidth 22-109BART FFT analysis keyword 26-7Bartlett FFT analysis window 26-3, 26-4base

charge equations, BJT’s 14-36resistance equations, BJT’s 14-37

basic model parametersBJT’s 14-19JFET TOM model 15-52MOSFET’s

Level 1 17-2Level 13 17-110Level 2 17-8Level 28 17-156Level 3 17-20Level 38 17-169Level 40 17-211Level 47 17-222Level 49 17-242Level 5 17-35Level 50 17-258Level 8 17-91Levels 6, 7 17-53

behavioral741 op-amp 23-93

amplitude modulator 23-79BJT modeling 23-109BJT phase detector model 23-114BJT VCO model 23-112CMOS inverter 23-63comparator 23-96current source 23-19data sampler 23-81differentiator 23-72d-latch 23-50elements, analog 23-70flip-flop 23-54gates 23-48integrator 23-70LC oscillator 23-100look-up tables 23-57n-channel MOSFET 23-51p-channel MOSFET 23-51phase detector model 23-105phased locked loop 23-105ring oscillator 23-67silicon controlled rectifier 23-76transformer 23-74triode vacuum tube 23-77tunnel diode 23-75VCO model 23-98voltage source 23-30VVCAP model 23-102

behavorialn-channel MOSFET 23-59

BETA keyword 9-18BiCMOS devices 14-2bin description parameters, MOSFET

Level 49 17-248binary output data 3-53, 3-54

Index B


binary search 28-6–28-12bisection

error tolerance 28-8function 28-1function syntax 28-7method 28-5pass-fail method 28-5

bisection data, printing 3-52BISECTION model parameter 28-7BJT’s

basearea mutiplying factor 14-5charge equations 14-36push-out effects 14-47width modulation model param-

eters 14-22base-collector

depletion capacitance equations14-41

diffusion capacitance equations14-40

base-emitterdepletion capacitance equations

14-39diffusion capacitance equations

14-38beta temperature equations 14-53–

14-57capacitance temperature equations

14-57collector area multiplying factor 14-

5conductance 14-7, 14-8control options 14-3current equations 14-34

current flow 4-13DC models

equations 14-34parameters 14-19

elementsnames 14-4parameters 14-4

emitter area multiplying factor 14-5energy gap temperature equations

14-53equivalent circuits 14-7excess phase equation 14-44high current Beta degradation

parameters 14-22initial

conditions 14-5internal voltages 14-5

junction capacitanceequations 14-42model parameters 14-23

Level 2model parameters 14-26temperature equations 14-60

low current Beta degradationparameters 14-21

modelsconstants (table) 14-15names 14-16parameters 14-18statements 14-16variables (table) 14-13

multiply parameter 14-5noise

equations 14-45model parameters 14-26summary printout 14-46

C Index


npn identifier 14-16parasitics

capacitance model parameters14-25

resistance model parameters 14-23

resistor temperature equations14-60

pnp identifier 14-16power dissipation 4-17saturation temperature equations 14-

53–14-57scaling 14-5substrate

capacitance equations 14-43current equation 14-36

temperaturedifferential 14-5effect parameters 14-27parameters 14-27

transit time model parameters 14-25variable base resistance equations

14-37BKPSIZ option 7-15BLACK FFT analysis keyword 26-7Blackman FFT analysis window 26-3Blackman-Harris FFT analysis window

26-3bond wire example 20branch current

error 6-14, 6-23output 4-11

branch matrix 22-35breakpoint table

reducing size 7-28

size 7-15BRIEF

keyword 6-8option 3-45, 3-48, 3-50, 3-51, 3-52

Broyden update data, printing 3-52BSIM Level 13 model 3-66, 16-4BSIM2 Level 39 model 3-66, 16-5BSIM3 Level 47 model 16-5bulk

charge effect 16-2semiconductor devices 15-2transconductance, MOSFET’s 16-19

bus notation 5-63Butterworth filter pole/zero analysis 25-

9BV diode model parameter 13-3BW model parameter 23-86BYPASS option 7-8, 16-11BYTOL option 7-11

C

C2 model parameter 23-85Cadence

Analog Artistsee Artist, Analog Artist

Opus 3-48WSF format 3-48

capacitanceCAPOP model selector 16-6charge tolerance, setting 7-11control options 16-71CSHUNT node-to-ground 7-8distribution for wire RC model 12-

Index C


10effective 12-6, 12-18, 12-20element

equation 12-17parameter 12-16

equations, BJT’s 14-38, 14-39, 14-40, 14-42

function of voltage 12-18, 12-21input-output ratio 12-10JFET and MESFET 15-5, 15-29–15-

35CAPOP=2 parameters 15-33equations 15-6gate to drain 15-5source to gate 15-5

manufacturing variations 10-48model

parameters 12-5, 12-19selection 16-59

MOSFET’sdiodes 16-49equations 16-77–16-103gate capacitance models 16-59Meyer model 16-59models 16-59

node to bulk 12-6overlap 16-76parameters

BJT’s 14-23MOSFET’s

Level 38 17-173Level 5 17-37

parasitic 12-10pins 20-6plotting 16-69scale factor, setting 8-11

table of values 6-14temperature equations 12-21

BJT’s 14-57capacitance, voltage variable 23-102capacitance-voltage plots, generating 6-

15capacitors

conductance requirement 6-33current flow 4-12DC sweep evaluation 14-38elements 12-16

names 12-16, 12-21parameters 12-3

initial voltage 12-18, 12-22length parameter 12-17models 3-65

(list) 16-6parameters 12-5

node names 12-16, 12-21nonlinear equations 12-3polynomial

coefficients 12-21elements 12-21

temperaturecoefficients 12-16equations 12-9

width parameter 12-17capacitors, switched 27-45CAPL model parameter 22-38CAPOP model parameter 7-20, 15-3,

16-6, 16-59CAPTAB option 6-14CASMOS

GEC model 16-4GTE model 16-4

C Index


Rutherford model 16-4CCCS element parameter 23-27CCVS element parameter 23-36CDS option 3-54cell characterization 10-2CENDIF optimization parameter 11-7CEXT model parameter 22-17, 22-26,

22-28, 22-30channel length modulation, MOSFET’s

equationsLevel 2 17-16Level 3 17-27Level 38 17-179Level 5 17-50Level 6 17-82Level 8 17-100

parametersLevel 6 17-82Level 8 17-95

characteristic impedance 22-103characterization of models 8-3charge conservation 16-95charge tolerance, setting 7-11CHGONLY model parameter 5-50, 23-

43CHGTOL option 7-11, 7-26CHI model parameter 23-41circuits

subcircuit numbers 3-32temperature 10-62See also subcircuits

CLEN model parameter 22-38CLO model parameter 23-40

CLOAD model parameter 5-50, 23-43clock

frequency 22-109skew 20-6

CLOSE optimization parameter 11-7CMOS differential amplifier

pole/zero analysis 25-11CMRR

model parameter 23-85specification 23-5

CMULT model parameter 22-17, 22-26,22-28, 22-30

CO option 3-48, 4-52coax

see transmission linescoefficients

Laplace 27-20transfer function 27-18

column laminated data 3-42commands

hspice 3-10–3-14arguments 3-11

limit descriptors 4-9metaio 24-8

comment line (digital vector files) 5-56comments 3-28

$ delimiter 3-28* delimiter 3-28

common emitter gain 28Common Simulation Data Format 3-49COMP model parameter 23-83, 23-85comparators

behavioral models 23-82

Index C


model 23-96complex poles and zeros 27-27compression of input files 3-17concatenated data files 3-41conductance

BJT’s 14-7, 14-8current source, initialization 6-26diodes 13-12for capacitors 6-33JFET and MESFET 15-5, 15-12minimum, setting 7-15models 6-15MOSFET 16-18, 16-56MOSFET nodes 6-26negative, logging 3-49node-to-ground 6-16, 7-9pn junction 6-40scale, setting 8-11sweeping 6-16

continuation character, parameterstrings 10-5

continuation of line (digital vector file)5-57

control characters in input 3-18control options

ABSH 6-23, 7-11, 9-7ABSI 6-23ABSMOS 6-24ABSTOL 6-14ABSV 7-11, 7-14ABSVAR 7-11, 7-13ABSVDC 6-24ACCT 3-47, 4-6accuracy, defaults 7-27ACCURATE 7-11

ACOUT 9-7algorithm selection 6-14ARTIST 3-47, 3-54ASPEC 3-48AUTOSTOP 7-14BADCHR 3-18BJT’s 14-3BKPSIZ 7-15BRIEF 3-45, 3-48, 3-50, 3-51, 3-52BYPASS 7-8BYTOL 7-11capacitance 16-71CAPTAB 6-14CDS 3-54CHGTOL 7-11CO 3-48, 4-52CONVERGE 6-24, 6-28convergence 6-23CPTIME 3-49CSCAL 8-11CSDF 3-49CSHDC 6-14CSHUNT 7-8DC convergence 6-14DCCAP 6-15DCFOR 6-15DCHOLD 6-15DCON 6-25, 6-28DCSTEP 6-15DCTRAN 6-26defaults 3-45, 3-68DELMAX 7-15, 7-16, 7-19DIAGNOSTIC 3-49DV 6-16, 6-28DVDT 7-9, 7-25DVTD 7-9

C Index


DVTR 7-15EPSMIN 3-49EXPMAX 3-49FAST 7-12FMAX 7-12FS 7-15, 7-17FSCAL 8-11, 8-12FT 7-15, 7-17GMAX 6-26GMIN 7-15

stepping 6-26GMINDC 6-26, 6-28GRAMP 6-16, 6-26, 6-28GSCAL 8-11GSHUNT 6-16, 7-9H9007 3-49ICSWEEP 6-17IMAX 7-16IMIN 7-16INGOLD 3-49, 3-51INTERP 7-9ITL1 6-17ITL3 7-16ITL4 7-16ITL5 7-16ITLPZ 8-11ITRPRT 7-9JFET’s 15-5KCLTEST 6-17LENNAM 3-50LIMPTS 3-50LIMTIM 3-50LIST 3-50, 3-55LSCAL 8-11LVLTIM 7-9, 7-10, 7-13, 7-14MAXAMP 6-17, 7-12, 9-7

MAXORD 7-10MBYPASS 7-12MEASDGT 3-50MEASOUT 3-51MENTOR 3-51MESFET’s 15-5METHOD 7-10MOSFET’s 16-9MU 7-12, 7-14NEWTOL 6-18NODE 3-51NOELCK 3-52NOMOD 3-52NOPAGE 3-52NOPIV 6-18NOTOP 3-52NOWARN 3-52NUMDGT 3-52NXX 3-52OFF 6-18OPTLST 3-52OPTS 3-52PARHIER 3-53PATHNUM 3-53PIVOT 6-18PIVREF 6-20PIVREL 6-20PIVTOL 6-19, 6-20POST 3-4, 3-53, 4-6printing values of 3-52PROBE 3-54PZABS 8-12PZTOL 8-12RELH 6-27, 7-13, 9-7RELI 6-27, 7-13RELMOS 6-24, 6-27

Index C


RELQ 7-13RELTOL 7-11, 7-13RELV 6-27RELVAR 7-13RELVDC 6-27RESMIN 6-20RITOL 8-12RMAX 7-16RMIN 7-16SDA 3-48, 3-54SEARCH 3-54, 3-59setting 3-45SLOPTOL 7-13SPARSE 6-20SPICE 3-54table 3-46TIMERES 7-14TRTOL 7-14TSTEP 7-16UNWRAP 9-8VERIFY 3-55VFLOOR 7-17VNTOL 7-14WARNLIMIT 3-55XnR,XnI 8-12ZUKEN 3-55

controlled sources 5-20, 23-4, 23-13element statement 5-20, 23-14

CONVERGE option 6-24, 6-28, 6-34convergence

control options 6-23current 6-23, 6-26, 6-27, 7-11, 7-12,

7-13, 9-7ensuring 6-15for optimization 11-9

increasing iterations 6-15MOSFET diodes 16-29problems, diodes 13-4steady state 6-16

convergence problems 6-35.NODESET statement 6-7analyzing 6-35autoconverge process 6-28caused by BYPASS 7-8causes 6-37changing integration algorithm 7-10CONVERGE option 6-34

solutions 6-24DCON setting 6-25, 6-30decreasing the timestep 7-15diagnosing 6-35–6-40diagnostic tables 6-35floating point overflow 6-34GMINDC ramping 6-30internal timestep too small 7-9nonconvergent node listing 6-26op-amp models 23-83operating point Debug mode 6-8pole/zero analysis 25-3reducing 6-31setting DCON 6-26

core model parameters 12-35A 12-34ALPHA 12-34MS 12-34

CORKD model parameter 22-17, 22-27cos(x) function 10-6cosh(x) function 10-6coupled line noise simulation example

20-26

D Index


CPTIME option 3-49CPU time

limiting 3-50reducing 3-52setting maximum 3-49

critical frequency 27-5CROSS keyword 4-22crosstalk 22-108CSCAL option 8-11, 25-4CSDF option 3-49CSHDC option 6-14CSHUNT option 7-8CUR element parameter 23-21current

ABSMOS floor value forconvergence 6-27

branch 4-12–4-14branch current error 6-14, 6-23convention

BJT’s 14-6JFET’s 15-9MOSFET’s 16-17

diodes 13-11epitaxial 14-50in HSPICE elements 4-12–4-14KCL test 6-17operating point table 6-8

current controlledcurrent source 5-33, 23-26current sources 23-13, 23-14sources 5-20voltage source 5-42, 23-35voltage sources 23-13

CURRENT keyword 6-8

Curtice model 15-3, 15-25, 15-26customer support viCUT optimization parameter 11-8C-V plot 15C-V plots, generating 6-15Cxxx capacitor element statement 12-

16, 12-21Cypress model 16-4

D

D12 model parameter 22-30D2A

function 5-46model parameter 5-46See also analog to digital, mixed

mode.d2a file 5-46D2A function 23-4D2A

See also digital to analog, mixedmode

Dallas Semiconductor model 16-4Damped Pseudo Transient algorithm 6-

34data

encryption 29-1sampler, behavioral 23-81sheet parameters 20-1

data driven analysis 10-2, 10-3, 20-9data driven PWL source function

PV parameter 5-16, 7-38TIME parameter 5-16, 7-38

data files, disabling printout 3-48

Index D


DATA keyword 3-37, 7-5, 8-4, 9-4.DATA statement 20-9, 20-10

data driven analysis 3-37datanames 3-38for sweep data 3-37inline data 3-38

.DATA sweep 3-41datanames 3-38db(x) function 10-7DC

analysis 8-8–8-10capacitor conductances 6-33decade variation 8-5initialization 6-15iteration limit 6-17linear variation 8-5list of points 8-5octave variation 8-5

convergence control options 6-14equations

BJT’s 14-34JFET and MESFET 15-35–15-

38operating point

analysis 6-8bypassing 7-3See also operating point

optimization 8-4parameters, JFET

Level 1 15-23Level 2 15-23Level 3 15-25

sensitivity analysis 8-9small-signal analysis 8-9sweep 8-3

transfer function 8-9.DC statement

external data with .DATA 3-38DCAP

equation selector 14-3option 13-4

JFET and MESFETcapacitance 15-5models 15-6

overriding in BJT models 14-3DCCAP option 6-15, 13-4, 14-38, 15

JFET and MESFET capacitance 15-5

DCFOR option 6-15DCHOLD option 6-15DCON option 6-25, 6-28DCSTEP option 6-15, 6-33DCTRAN option 6-26DDL

See also Discrete Device LibraryDDLPATH environment variable 3-57,

28DEBUG keyword 6-8DEC keyword 7-6, 8-5, 9-5decibel function 10-7decoupling methods 20-6DEF model parameter 23-85DEFAULT_INCLUDE variable 3-16DEFW option 10-22.DEL LIB statement 3-21

in .ALTER blocks 10-30with .ALTER 10-31with .LIB 10-31

D Index


with multiple .ALTER statements10-31

DELAYelement parameter 23-21, 23-27, 23-

31, 23-36model parameter 22-38

delayscauses 20-3derating curve 20-4element example 5-31Elmore 27-30group 4-14, 9-8measuring 4-20plotting 20-5problems and solutions 20-3simulation example 20-10transmission lines 22-38types 20-6

DELEN model parameter 22-38DELF element parameter 27-6, 27-9DELMAX option 7-15, 7-16, 7-19, 7-27,

7-30ideal delay elements 7-19oscillator circuits 7-19

DELPHS 23-86DELTA element parameter 23-17, 23-

21, 23-27, 23-31, 23-36, 23-75,27-9

DELTA internal timestep 7-15See also timestep

DELVTO model parameter 10-34demo files

.ALTER statement 342n2222 BJT transistor

characterization 402n3330 JFET transistor

characterization 40A/D flash converter 38A2D 37AC

analysis 34resonance analysis 43

acl gate 35adders

72-transistor two-bit 36BJT NAND gate two-bit 35BJT two-bit 34digital to analog 37MOS two-bit 35NAND gate four-bit binary 34

air core transformer 43algebraic

parameters 34transmission lines 47

AM source 46amplifier 37amplitude modulator 35analog 36analog to digital 38AND gate 35automatic model selection program

44behavioral models 36

diode 35D-latch 35filter 34NAND gate 35ring oscillator 36triode 36voltage to frequency converter

Index D


34bipolar

analog circuit 36Schmidt trigger 34sense amplifier 34

bisectionpass-fail 36search 36, 37

BJTbeta plot 37differential amplifier 34, 37ft plot 37gm, gpi plots 37photocurrent 46

BSIM3 model, Level=47 43capacitances

MOS modelsLevel=13 43Level=2 43Level=6 44

cell characterization 34, 35charge conservation

MOS modelsLevel=3 44Level=6 44

CMOSdifferential amplifier 34I/O driver ground bounce 34, 46input buffer 37inverter macro 36output buffer 37

coax transmission line 47crystal oscillator 34current controlled

current source 36voltage source 36

D2A 37DC analysis, MOS model Level=34

44delay 34, 37

versus fanout 37differential amplifier 34differentiator 35diffusion effects 35diode photocurrent 45D-latch 35E element 35edge triggered flip-flop 35exponential source 46FFT

AM source 41Bartlett window 41Blackman window 41Blackman-Harris window 42data-driven transient analysis 42exponential source 41Gaussian window 42Hamming window 42Hanning window 42harmonic distortion 41high frequency detection 41intermodulation distortion 42Kaiser window 42modulated pulse source 42Monte Carlo, Gaussian distribu-

tion 42piecewise linear source 42product of waveforms 42pulse source 42rectangular window 42single-frequency FM source 42sinusoidal source 42

D Index


small-signal distortion 41switched capacitor 42transient 42

sweep 42window tests 42

filter matching 38filters

behavioral 34fifth-order

elliptical switched capacitor36

low-pass 43fourth-order Butterworth 43Kerwin’s circuit 43LCR bandpass 43matching lossy to ideal 38ninth-order low-pass 35, 43switched capacitor low-pass 35

FR-4 microstrip transmission line43, 46

G element 34, 35GaAsFET amplifier 34gamma model Level=6 44ground bounce 34, 46group time delay 34impact ionization plot 44installation test 36integrator 35inverter 35, 36

characterization 34, 37sweep 37

IRF340 NMOS transistorcharacterization 40

I-Vand C-V plots, Level=3 44plots

MOSFET model Level=1344

SOSFET model Level=27 44JFET photocurrent 46junction tunnel diode 37LCR circuit 37lumped

MOS model 34transmission lines 43, 47

magnetic core transformer 43microstrip transmission lines 43, 47

coupled 47optimization 47series 47

Monte Carloanalysis 35

DC 35Gaussian distribution 35limit function 35uniform distribution 35

MOSamplifier 37simulation 36

MOSFET’ssigma sweep 37sweep 34

NAND gate 35, 36NMOS E-mode model, Level=8 46noise analysis 34op-amp 34, 35

characterization 38–40voltage follower 35, 46

optimization 352n3947 Gummel model 41DC 41diode

Index D


I-V and C-V 41temperature 41

GaAsFET 41JFET 41

GaAsFET s-parameter 41group delay 37hfe 41I-V 41JFET 41Level=2 model beta 40Level=28 41MOS 41

Level=13 I-V 41Level=2 I-V 41Level=3 I-V 41Level=6 I-V 41

s-parameter 41speed, power, area 37width 37

parameters 34PCI

Monte Carlo analysis 44worst-case modeling 44

peripheral component interconnectsee PCI

phase detector 35phase locked loop 35photocurrent 44–46

GaAs device 46photolithographic effects 35piecewise linear source

see demo files, PWLpll 35pole/zero analysis 34, 43pulse source 46

PWL 46CCCS 36CCVS 36switch element 36VCCS 35, 36VCO 36VCVS 36

radiation effectsbipolar devices 44–45DC I-V, JFET 46GaAs differential amplifier 46JFET devices 45MOSFET devices 45NMOS

NAND 46voltage divider 46

RC circuit optimization 38resistor temperature coefficients 38RG58/AU coax test 43ring oscillator 36Royer magnetic core oscillator 43Schmidt trigger 34sense amplifier 34series source coupled transmission

lines 47setup

characterization 37time search 36, 37

shunt terminated transmission lines47

silicon controlled rectifier 36sine wave sampling 35, 36single-frequency FM source 46sinusoidal source 46skew models 35SNAP to HSPICE conversion 37

D Index


s-parameters 37, 43Level=13 44

sweep 34switch 35

characterization 35switched capacitor 35, 46

RC circuit 36temperature effects

Level=13 44Level=6 44

total radiation dose 45transient analysis 34transistor characterization 40triode model 36tunnel diodes 36, 37twinlead transmission line model 47U models 47unity gain frequency 37Viewsim

analog to digital input 37digital to analog input 37

voltagefollower 35to frequency converter 34variable capacitor 35

voltage controlledcurrent source 35, 36oscillator 34, 36resistor inverter 46voltage source 36

waveform smoothing 36worst case skew model 35See also demonstration files

demonstration filesalgebraic output variables 34behavioral applications 35–36

benchmarks 36BJT’s and diodes 37cell characterization 37circuit optimization 37–38device optimization 40–41Discrete Device Library 38–40filters 42–43Fourier analysis 41–42general applications 34–35magnetics 43MOSFET’s 43–44peripheral component interconnect

44radiation effects 44–46sources 46timing analysis 36transmission lines 46–47See also demo files

depletioncapacitance, DCAP equation

selector 13-4, 14-3, 15-6MOS devices 16-2

DERIVATIVE keyword 4-29derivative, measuring 4-25design

name 3-15partitioning 20-7stability 27-2time, reducing 27-2

deviation, average 10-3device characterization 3-56Device Model Builder optimization 11-3DFT 26-1DI control option 6-26, 7-12, 9-7

Index D


DIAGNOSTIC option 3-49diagnostic tables 6-35–6-36dielectric constants 12-15differentiator, behavioral 23-72diffusion layer process parameters,

MOSFET Level 13 17-109DIFSIZ optimization parameters 11-8digital

elements 23-40, 23-42files 5-46, 23-39input 5-46input element 5-47input files 20-18models 23-40

digital to analogconversion 23-39model parameters 23-40

DIM2distortion measure 9-14parameter 4-15

DIM3distortion measure 9-14parameter 4-15

diodesarea 13-6breakdown example 5-32capacitance 13-28

calculations 13-4equations 13-28

depletion capacitance 13-29diffusion capacitance 13-28Level 3 metal 13-30Level 3 poly 13-30

Fowler-Nordheim diodes 13-38

conductance 13-12control options 13-3convergence problems 13-4current 13-11current flow 4-13effective length 13-7effective width 13-8elements 13-6

names 13-6statements 13-6

equation example 5-31equations 13-25–13-34

Fowler-Nordheim diodes 13-37equivalent circuits 13-12–13-13Fowler-Nordheim 13-2, 13-35

element names 13-35initial condition 13-36initial voltage 13-36length 13-35multiplier parameter 13-36width 13-35

geometric junction 13-2initial voltage 13-7junction 13-1

DC equations 13-26model 13-14

capacitance parameters (ta-ble) 13-19

DC parameters (table) 13-16periphery 13-7temperature parameters 13-22

length 13-7metal capacitor 13-7polysilicon capacitor 13-7

metal model capacitance parameters(table) 13-20

D Index


models 3-65levels 13-3names 13-7noise parameters (table) 13-21regions 13-26variables (table) 13-25

MOSFETmodel selector 16-7models 16-7, 16-29

noise equations 13-30nongeometric junction 13-2poly model capacitance parameters

(table) 13-20power dissipation 4-17scaling 13-36

options 13-3parameters 13-8–13-11

series resistance units 13-18temperature

compensation equations 13-31effects 13-22equations

breakdown voltage 13-32contact potential 13-32energy gap 13-31grading coefficient 13-34junction capacitance 13-33leakage current 13-31resistance 13-34transit time 13-32

terminal names 13-7types 13-2width 13-8

metal capacitor 13-8polysilicon capacitor 13-8

Zener 13-3

See also junction diodes, Zenerdiodes

directoriesinstallation directory 3-56models 3-60tmp 3-8

DIS 23-86Discrete Device Library 3-56

DDLPATH variable 3-57discrete device library 23-5

models 28Discrete Fourier Transform 26-1.DISTO statement 9-14, 9-15distortion

analysis 9-14measures 9-14

DLEV model parameter 22-15, 22-17,22-23, 22-26, 22-30

document conventions ivdocumentation issues iiidollar sign comment delimiter 3-28dot convention 12-26, 12-29, 12-30drain current equation, MOSFET Level

47 17-235drain-to-source current, convergence

error tolerance 6-24DTEMP element parameter 10-61DTEMP model parameter 10-61, 10-62,

26DV

calculation 6-25option 6-16

DV option 6-28

Index E


DVDTalgorithm 7-11, 7-13, 7-21, 7-25option 7-9, 7-25, 7-26

timestep control 7-19, 7-27DVTR option 7-15Dxxx diode element statement 13-6dynamic timestep algorithm 7-26

E

E elements 23-13, 27-23–27-30applications 23-13controlling voltage 23-33data points 23-32data sampler application 23-81element name 23-31element value multiplier 23-32gate type 23-31initial conditions 23-31integrator application 23-71maximum voltage 23-32minimum voltage 23-32NAND gate 23-48parameter value multiplier 27-10polynomial

coefficients 23-32dimension 23-32

SCALE parameter 27-34temperature coefficients 23-32time delay keyword 23-33transformer application 23-74triode application 23-78turns ratio 23-31voltage gain 23-31

E format 4-49Early voltage 17-5

Ebers-Moll model 14-1, 14-17ECL devices 14-2effective capacitance 12-6

calculation 12-19effective channel length, MOSFET’s

equationsLevel 1 17-6Level 13 17-114Level 28 17-160Level 39 17-193Level 49 17-255Level 5 17-39Level 6 17-62Level 8 17-97

parametersLevel 1 17-3Level 2 17-9Level 3 17-21, 17-25Level 38 17-169Level 49 17-247Level 5 17-36Level 8 17-92Levels 6, 7 17-56

effective channel widthequations

MOSFET’sLevel 1 17-6Level 13 17-114Level 2 17-13Level 28 17-160Level 3 17-25Level 39 17-193Level 49 17-255Level 5 17-39Level 6 17-62

E Index


parametersMOSFET’s

Level 1 17-3Level 2 17-9Level 3 17-21Level 38 17-169Level 49 17-247Level 5 17-36Level 8 17-92, 17-97

effective length, diodes 13-7effective mobility

parameters, MOSFET Level 6 17-78effective mobility, MOSFET’s

equationsLevel 28 17-161Level 3 17-27Level 6 17-78Level 8 17-98

effective resistance 12-7AC 12-6

effective width, diodes 13-8EISA standard 20-32element parameters

BJT’s 14-4AREA 14-5area value 14-4AREAB 14-5AREAC 14-5DTEMP 14-5IC 14-5M 14-5model name 14-4node names 14-4OFF 14-5Qxxx 14-4

capacitors 12-3, 12-16–12-17C0 12-3C1 12-3capacitance 12-16CTYPE 12-18Cxxxx 12-16DTEMP 12-17IV 12-18L 12-17M 12-17POLY 12-3SCALE 12-18TC1 12-16TC2 12-17W 12-17

digital elementsSIGNAME 23-42

digital elements, SIGNAME 23-40diodes 13-5

AREA 13-6DTEMP 13-6Dxxx 13-6IC 13-7L 13-7LM 13-7LP 13-7M 13-7OFF 13-7PJ 13-7W 13-8WM 13-8WP 13-8

DTEMP 10-61, 12-3E elements

ABS 23-31DELAY 23-31

Index E


DELTA 23-31IC 23-31MAX 23-32MIN 23-32NPDELAY 23-32OPAMP 23-32POLY 23-32PWL 23-32SCALE 23-32TC1, TC2 23-32TD 23-33TRANSFORMER 23-33VCVS 23-33

F elementsABS 23-26CCCS 23-27DELAY 23-27DELTA 23-27IC 23-27M 23-27MAX 23-27MIN 23-27NPDELAY 23-28POLY 23-28PWL 23-28SCALE 23-28TC1, TC2 23-28TD 23-28

Fowler-Nordheim diodesD 13-35Dxxx 13-35IC 13-36M 13-36model name 13-35node names 13-35OFF 13-36

W 13-35G and E elements

DELF 27-9DELTA 27-9FREQ 27-10LAPLACE 27-10LEVEL 27-10M 27-10MAX 27-10MAXF 27-10POLE 27-10SCALE 27-10TC1 27-10TC2 27-10

G elementsABS 23-20CUR 23-21DELAY 23-21DELTA 23-21Gxxx 23-21IC 23-21M 23-21MAX 23-21MIN 23-21NPDELAY 23-22NPWL 23-22POLY 23-22PPWL 23-22PWL 23-22SCALE 23-22SMOOTH 23-22TC1, TC2 23-23TD 23-23VCCAP 23-23VCCS 23-23VCR 23-23

E Index


geometric 12-3H elements

ABS 23-35CCVS 23-36DELAY 23-36DELTA 23-36IC 23-36MAX 23-36MIN 23-36NPDELAY 23-37POLY 23-37PWL 23-37SCALE 23-37TC1, TC2 23-37TD 23-37

independent sources 5-2AC 5-3AM function 5-18data driven PWL function 5-15DC 5-3EXP function 5-11Iyyy 5-3M 5-3PULSE function 5-6PWL function 5-13SFFM function 5-17SIN function 5-9Vxxx 5-2

inductors 12-3C0 12-3C1 12-3POLY 12-3

initial conditions 12-4JFET and MESFET 15-7

AREA 15-8DTEMP 15-8

IC 15-8Jxxx 15-7L 15-8M 15-8OFF 15-8W 15-8

linear inductors 12-24DTEMP 12-24IC 12-23Kxxx 12-26L 12-23LTYPE 12-24Lxxx 12-23M 12-24R 12-24SCALE 12-23TC1 12-23TC2 12-23

MAG 12-30magnetic windings

IC 12-29Lxxx 12-29NT 12-29R 12-29

MOSFET’s(list) 16-15AD 16-13AS 16-13DELVTO 16-14DTEMP 16-14GEO 16-14, 16-45L 16-12M 16-14Mxxx 16-12NRD 16-13NRS 16-13

Index E


OFF 16-14PD 16-13PS 16-13RDC 16-13RSC 16-13W 16-13

mutual inductors 12-3K 12-26

nonlinearcapacitors 12-3inductors 12-3

piecewise linear sourcesPV 5-16, 7-38R 5-13TD 5-13TIME 5-16, 7-38

polynomial capacitorsCxxx 12-21IC 12-22POLY 12-21

polynomial inductorsIC 12-28Lxxx 12-28POLY 12-28

R 12-3resistors 12-3

AC 12-6C 12-6DTEMP 12-6L 12-6M 12-7R 12-7Rxxx 12-7SCALE 12-7TC1 12-7TC2 12-7

W 12-7T elements

F 22-11IC 22-11L 22-11NL 22-11TD 22-11Txxx 22-11Z0 22-11

U elementscij 22-52cpr 22-52crj 22-52gij 22-52gpr 22-53grj 22-52hti 22-53L 22-14lij 22-53ljj 22-53lri 22-53lrr 22-53LUMPS 22-14ric 22-53ris 22-53rjj 22-53rrc 22-53rrr 22-53rrs 22-53skin 22-53skinb 22-53spi 22-53thi 22-53Uxxx 22-14wdi 22-53

element statements 3-56, 12-2, 16-3

E Index


BJT 14-4capacitor 12-16Cxxx 12-16digital element 23-42diodes 13-6G elements 23-18–23-25ideal T element 22-10independent sources 5-2JFET and MESFET 15-7linear inductor 12-23magnetic winding 12-29MOSFET 16-12mutual core 12-30mutual inductor 12-26op-amps 23-83polynomial inductor 12-28resistor 12-6Rxxx 12-6transconductance

Laplace 27-6pole/zero 27-7

U element 22-14voltage gain

Laplace 27-6pole/zero 27-7

elementsanalog behavioral 23-70capacitors 12-16checking, suppression of 3-52descriptions 12-2digital 23-40, 23-42diodes 13-6IC parameter 6-6ideal 5-20independent sources 5-6linear inductors 12-23

magnetic winding 12-29magnetics 12-29mutual inductors 12-26names 3-26, 3-30, 12-2nonlinear 12-3OFF parameter 6-4, 6-18parameters 12-2–12-4

.ALTER blocks 10-31DELTA 23-17POLY 23-14scaling 16-10

polynomial capacitors 12-21polynomial inductors 12-28resistors 12-6saturable cores 12-30scale factors 12-7, 12-18statement 3-25subcircuits 23-11temperature 10-62template function 10-7templates 4-35–4-39

BJT 4-39capacitor 4-36current-controlled

current source 4-38voltage source 4-38

independentcurrent source 4-39voltage source 4-38

inductor 4-36JFET 4-42MOSFET 4-43mutual inductor 4-37resistor 4-36saturable core

element 4-46

Index E


winding 4-46voltage-controlled

current source 4-37voltage source 4-37

types 3-26ELEV model parameter 22-7, 22-15, 22-

17Elmore delay 27-30enable (digital vector file) 5-67encrypted data 29-2encryption

file organization 29-6FREELIB keyword 29-7permit file changes 29-7semicolon bug 29-5

.END statementfor multiple HSPICE runs 3-24in libraries 3-64location 3-24missing 3-17with .ALTER 10-31

ENDDATA keyword 3-38.ENDL statement 3-61, 3-62.ENDS statement 23-10energy gap temperature equations

BJT 14-53JFET and MESFET 15-45

engineering format 4-49environment variables

DDLPATH 3-57, 28.EOM statement 23-10epitaxial charge 14-50EPSMIN option 3-49, 27-17

equivalent circuitsBJT 14-7JFET 15-10MOSFET 16-18

ERR function 4-31, 4-32ERR1

function 4-31, 4-32keyword 11-3

ERR2 function 4-31, 4-33ERR3 function 4-31, 4-33error tolerances

ABSMOS 6-24branch current 6-14, 6-23optimization by bisection 28-8pole/zero analysis 8-12relative change 6-27, 7-13RELMOS 6-24voltage 6-27, 7-13

error, optimization goal 4-21errors

bulk node not specified 12-15cannot open input file 3-10could not open output spool file 4-9current exceeding MAXAMP 7-12DC 6-31digital file has blank first line 5-46file open 3-8functions 4-31–4-33internal timestep too small 6-5, 6-16,

6-38, 7-3, 7-8, 7-9, 7-17missing .END statement 3-17negative slope for magnetization

level 12-34no DC path to ground 6-33no input data 3-7

F Index


parameter name conflict 10-17printing 3-52reference to undefined inductor 12-

27special characters in input 3-18system resource inaccessible 4-9timestep control error in

transmission lines 22-64excess phase 14-44EXP source function 5-11

fall timeconstant 5-11delay 5-11

initial value 5-11pulsed value 5-11rise time

constant 5-11delay 5-11

exp(x) function 10-7experiment 3-3EXPMAX option 3-49exponential

function 10-7source function 5-11SPICE format 4-49

expressions for parameters 10-12external data files 3-21, 3-38extraction, layout parameters 20-55

F

F element parameter 22-11F elements 23-13

applications 23-14controlling voltage 23-28

current gain 23-27data points 23-28gate type 23-27initial conditions 23-27maximum current 23-27minimum current 23-27multiply parameter 23-27name 23-27polynomial


temperature coefficients 23-28time delay keyword 23-28value multiplier 23-28

FALL keyword 4-22fall time example 20-10fanout, plotting 20-5Fast Fourier Transform

see FFTFAST option 7-12, 7-18ferromagnetic core models 12-33FFT

analysisalfa control parameter 26-7frequency

of interest 26-9range 26-9specification 26-7

frequency range 26-10harmonic distortion 26-14maximum frequency 26-7minimum frequency 26-7number of points 26-6output magnitude format 26-6results 26-9–26-10

Index F


spectral leakage 26-14start point 26-6statement syntax 26-6–26-8stop point 26-6window type 26-7

windows 26-2–26-4Bartlett 26-3Blackman 26-3Blackman-Harris 26-3Gaussian 26-3Hamming 26-3Hanning 26-3Kaiser-Bessel 26-3rectangular 26-3

.FFT statement 26-1, 26-6field effect transistor 16-23

geometry 16-23See also MOSFET, JFET

field programmable gate arrays 20-22FIL keyword 3-38file descriptors limit 4-9files

.a2d 4-3, 4-4, 5-46

.ac# 4-2

.ft# 4-3, 4-4, 26-10

.gr# 4-3

.ic 4-3, 6-5

.lis 4-2

.ma# 4-2

.MEASURE output 20-1

.ms# 4-2

.mt# 4-2

.pa# 4-3

.st# 4-3

.sw# 4-2

.tr# 4-2AC analysis

measurement 4-4results 4-4

column lamination 3-42concatenated data files 3-41d2a 5-46DC analysis

measurements 4-4results 4-4

design.ac0 20-1design.mt0 20-1design.sw0 20-1digital input 20-18external data 3-21, 3-37filenames 3-38graph data 3-4, 4-4hspice.ini 3-51

creation 3-57include files 3-21, 3-60, 3-64including 3-16initialization 3-16input 3-4

file name 3-11limit on number 4-9multiple simulation runs 3-24names 3-11–3-13, 3-15

suffixes 3-11output

listing 4-3names 3-12status 4-5version number 3-12

scratch files 3-8subcircuit node cross-listing 4-5transient analysis

F Index


measurement 4-4results 4-4

transition data 23-4filing a documentation bug iiifilters

active low-pass 25-14band reject 27-11low-pass 27-13pole/zero analysis

Butterworth 25-9high-pass 25-9low-pass 25-5, 25-14

transfer functions 27-28FIND keyword 4-25fixed and exponential format 4-49flicker noise 16-104floating point overflow

CONVERGE setting 6-25setting GMINDC 6-26

Fluke-Mosaid model 16-4FMAX

.FFT parameter 26-7option 25-4

FMAX option 8-11FMIN .FFT parameter 26-7FORMAT .FFT parameter 26-6FORTRAN logical units 3-62Fourier

coefficients 7-31equation 7-31integral 27-5transfer function H(f) 27-5transform 27-5

.FOURIER statement 7-30

Fowler-Nordheim diodes 13-2capacitances 13-38element statement 13-35equations 13-37model parameters 13-37scaling 13-36

FPGA’s 20-22FR1 model parameter 22-38FREELIB keyword 29-7FREQ

element parameter 27-10function

transconductance element state-ment 27-8

voltage gain element statement27-8

keyword 27-5model parameter 4-56, 23-86

frequencyanalysis 26-1complex 27-4, 27-17critical 27-5domain, transfer function 27-17maximum 27-6

frequency analysis 27-10maximum, setting 8-11Nyquist, frequency analysis 27-10poles and zeros, frequency analysis

27-10ratio 9-15resolution 27-6

Fourier analysis 27-6frequency analysis 27-9

response 27-4response analysis 27-3

Index G


response table 27-8response table, frequency analysis

27-10setting scale 8-11sweep 9-6table 27-3variable 10-8weighing functions 26-2

frequency domain to time domain 27-1FROM

.FFT parameter 26-6keyword 4-32

FSkeyword 9-18option 7-15, 7-17, 7-27

FSCAL option 8-11, 8-12, 25-4FT option 7-15, 7-17, 7-27

timestep control 7-27.ft# file 4-3, 4-4, 26-10functions

A2D 5-46, 23-4bisection 28-1built-in 10-6–10-7D2A 5-46, 23-4in parameters 10-13LAPLACE 25-1, 27-2, 27-6NPWL 5-26OPTIMIZE 23-3POLE 25-1, 27-2, 27-7PPWL 5-27redefining 10-8table 10-6See also independent sources

FV function value 23-14

G

G elements 23-13, 27-23–27-28amplitude modulator application 23-

80AND gate 23-48applications 23-13controlling voltages 23-21, 23-23curve smoothing 23-22data points 23-22DELTA parameter 23-75element value multiplier 23-22gate type 23-21initial conditions 23-21maximum

current 23-21resistance 23-21

minimumcurrent 23-21resistance 23-21

multiply parameter 23-21, 27-10names 23-21parameter value multiplier 27-10polynomial


polynomial dimension 23-22temperature coefficients 23-23time delay keyword 23-23transconductance 23-23triode application 23-78tunnel diode application 23-75voltage to resistance factor 23-23

G format 4-49gain, calculating 9-9gate

G Index


capacitanceequations, JFET and MESFET

15-29–15-35MOSFET Level 39 17-201parameters, JFET 15-20temperature equations, JFET and

MESFET 15-46diode DC parameters, JFET 15-18

GAUSSFFT analysis keyword 26-7keyword 10-41Monte Carlo function 10-16

Gaussian FFT analysis window 26-3Gaussian parameter distribution 10-39GBW model parameter 23-86GEAR algorithm 7-9, 7-21GE-CRD Franz model 16-4GE-Intersil model 16-4geometric element parameters 12-3geometry

area calculation method 15-26JFET and MESFET parameters 15-9model parameters 12-5scale factor 12-7, 12-18, 12-23scaling 16-11substrate diode 14-33

getting customer support viglobal node names 3-25global parameters 3-53, 10-19global scaling 16-11

overriding 15-9in models 13-3

GMAX option 6-26GMIN

option 7-15GMIN option 6-40, 15-5

stepping 6-26GMINDC option 6-26, 6-28, 6-40, 16-29

JFET and MESFET conductance 15-5

GND node 3-31GOAL keyword 4-24, 11-3.gr# file 4-3, 4-4

maximum version number 4-55GRAD optimization parameter 11-8gradient data, printing 3-52GRAMP

calculation 6-25option 6-16, 6-26, 6-28, 6-32

GRAMP conductance option 15-5graph data

file 3-4Viewlogic format 3-49

graph data fileSee also .gr# file

.GRAPH statement 15ground bounce 20-23ground node name 3-31ground plane, transmission lines 22-5group delay, calculating 9-8Grove-Frohman model 16-3GSCAL

multiplier 8-11option 8-11

GSCAL option 25-4GSHUNT option 6-16, 7-9Gummel-Poon model 14-1

Index H


Gxxx element parameters 23-21

H

H elements 23-13applications 23-13controlling voltage 23-37data points 23-37element name 23-36element value multiplier 23-37gate type 23-36initial conditions 23-36maximum current 23-36minimum current 23-36polynomial


SCR application 23-77temperature coefficients 23-37time delay keyword 23-37transresistance 23-37

H parameters 9-25H9007 option 3-49HAMM FFT analysis keyword 26-7Hamming FFT analysis window 26-3HANN FFT analysis keyword 26-7Hanning FFT analysis window 26-3harmonic distortion 9-14, 26-1HARRIS FFT analysis keyword 26-7HD2

distortion measure 9-14parameter 4-15

HD3distortion measure 9-14parameter 4-15

hertz variable 10-8Hessian data, printing 3-52HGP model parameter 22-17, 22-26, 22-

28, 22-30hierarchical designs, flattened 3-29hold time 28-4HSPICE

ground for transmission lines 22-21installation directory 3-56integration method 22-22job statistics report 4-6–4-9output

redirecting 3-13starting 3-7version

95.3 compatibility 7-27H9007 compatibility 3-49

VERSION parameter 3-66version, specifying 3-12

hspice command 3-10–3-14arguments 3-11

HSPICE model enhancements 17-265hspice.ini file 3-51

creating 3-57HT model parameter 22-17, 22-26HT1 model parameter 22-26hybrid (H) parameters 9-8

I

I/O cell modeling 31IB model parameter 23-86IBIS

converting to HSPICE format 24-4

I Index


specification 24-1IBIS to HSPICE program 24-2IBOS model parameter 23-86IC

element parameter 6-6, 22-11, 23-21, 23-27, 23-31, 23-36

keyword 6-12parameter 6-6

.ic file 4-3, 6-5

.IC statement 6-3, 6-4, 25-3balancing input nodes 23-83from .SAVE 6-11

.IC statment 12-22ICSWEEP option 6-17ideal

current sources 6-32delay elements 23-13

DELMAX setting 7-19op-amp 5-37, 5-40, 23-13, 23-30,

23-32, 23-33transformer 5-38, 5-41, 23-31, 23-34transformers 23-13transmission lines 22-6

ideal delay elements 23-13, 23-14idelay (digital vector file) 5-68IDS Cypress depletion model 16-5IDS equations, MOSFET’s

Level 1 17-5Level 13 17-114Level 2 17-12Level 3 17-24Level 38 17-174Level 5 17-38Level 6 17-62, 17-74

Level 8 17-96IGNOR keyword 4-31IKF model parameter 14-2IKR model parameter 14-2imaginary part of AC voltage 9-10imaginary vs. real component ratio 8-12IMAX option 7-16, 7-25

default 7-25IMIN option 7-16, 7-25

default 7-25impact ionization

BSIM2 17-201equations, MOSFET 16-19MOSFET Level 39 17-201MOSFET’s 16-55

impedance 22-101AC 9-13versus time 20-9Z parameters 9-8

impulse response h(t) 27-5inactive devices

see latent devicesinclude files 3-16, 3-60, 3-64.INCLUDE statement 3-21, 3-57, 3-58

and .ALTER blocks 10-31independent sources

AC 5-4magnitude parameter 5-3phase parameter 5-3

AM function 5-18current source name 5-3data driven PWL function 5-15DC 5-4

source value parameter 5-3

Index I


elementsparameters 5-2statements 5-2

EXP function 5-11mixed types 5-5PULSE function 5-6PWL function 5-13SFFM function 5-17SIN function 5-9transient 5-4transient source function 5-3types 5-6voltage source name 5-2See also sources

inductance 22-104effective value 12-23element parameter 12-23function of current 12-24, 12-28mutual 12-27temperature equation 12-25

inductance scale 8-11inductors

coupling 12-27DC resistance 12-24, 12-29dot convention 12-26, 12-29elements

names 12-23, 12-26, 12-28parameters 12-3

initial current 12-23, 12-28linear 12-23

branch relations 12-27mutual 12-26

coupling coefficient 12-26models 3-65

node names 12-23, 12-28

nonlinear equations 12-3number of turns 12-29polynomial 12-28

coefficients 12-28temperature coefficients 12-23

INGOLD option 3-49, 3-51, 4-49initial conditions 6-3

file 3-16saving and reusing 6-17statement 6-6transient 7-6

initial conditions, element parameters12-3, 12-4

initialization 6-3, 6-4, 6-18saved operating point 6-10

inline data 3-38inner sweep 3-41INOISE parameter 4-15input admittance 9-13input data

adding library data 10-31column laminated 3-42concatenated data files 3-41deleting library data 10-32digital stimuli 20-18external, with .DATA statement 3-

37filenames on networks 3-43for data driven analysis 3-37formats 3-39, 3-42include files 3-60printing 3-50suppressing printout 3-50

input files

I Index


character case 3-17compression 3-17control characters 3-18names 3-11, 3-15structure 3-21table of components 3-22unprintable characters 3-18

input impedance 9-13input netlist file 3-4

.END statement requirement 3-24See also input files

input/output drivers 20-18installation directory $installdir 3-56insulation breakdown devices 13-35int(x) function 10-7INTEG keyword 4-24, 4-30integer function 10-7INTEGRAL keyword 4-30integration

algorithms 7-21, 22-45, 22-64backward Euler method 7-10method 22-22order of 7-10

integrator, behavioral 23-70interconnect

analyzing 20-2See also transmission lines, wires

interfacesAnalog Artist 3-47Mentor 3-51MetaWaves 4-2MSPICE 3-51ZUKEN 3-55

intermodulation distortion 9-14

internal nodes, referencing 3-31INTERP option 7-9interstage gain 9-9inverse Laplace transform 27-30inverter gate 23-34io (digital vector file) 5-65I/O drivers 20-18ion-implanted devices 16-2ISA standard 20-32ISC model parameter 23-87ISPICE Level 6 model 17-75iteration

algorithm 7-23count algorithm 7-25limit 6-17

iterationsdata, printing 3-52extra 6-18maximum number of 7-16number 11-20

ITL1calculation 6-25option 6-17

ITL3 option 7-16ITL4 option 7-16ITL5 option 7-16ITLPZ option 8-11, 25-4ITROPT optimization parameter 11-8ITRPRT option 7-9Iyyy source element statement 5-2

Index J


J

JFET’sarea multiplying factor 15-8capacitance

equations 15-6, 15-29parameters 15-33

CAPOP=2 model parameters 15-33control options 15-5current convention 15-9current flow 4-13DC

modelequation selector 15-16Level 1 parameters 15-23Level 2 parameters 15-23Level 3 parameters 15-25

voltage equations 15-35elements

names 15-7, 15-8statements 15-7

equivalent circuits 15-10gate capacitance parameters 15-20gate diode DC parameters 15-18initial conditions 15-8initial voltages 15-8length 15-8models

constants 15-14names 15-8, 15-16parameters 15-17statements 15-16variables 15-14

n-channel specification 15-16noise

equations 15-39

parameters 15-39summary printout 15-41

output conductance 15-12p-channel specification 15-16power dissipation 4-18scaling 15-9temperature

differential 15-8equations 15-45–15-49parameters 15-42, 15-43

TOM model parameters 15-52transconductance 15-10width 15-8

Jiles-Atherton model examples 12-36JIS model parmeter 23-87junction diodes

geometric 13-5nongeometric 13-5parameters 13-5

K

KAISER FFT analysis keyword 26-7Kaiser-Bessel FFT analysis window 26-

3, 26-5KCLTEST option 6-17KD model parameter 22-17, 22-26, 22-

28, 22-30KD1 model parameter 22-26KD2 model parameter 22-27Kerwin’s circuit, pole/zero analysis 25-7keywords

AC 5-2ACI 5-2AGAUSS 10-41

K Index


ALL 6-8, 6-12AM 5-2AT 4-22AUNIF 10-41AVG 4-24BART 26-7BETA 9-18BISECTION 28-7BLACK 26-7BRIEF 6-8CROSS 4-22CURRENT 6-8DATA 3-37, 7-5, 8-4, 9-4DC 5-2DEBUG 6-8DEC 7-6, 8-5, 9-5DERIV 4-29DERIVATIVE 4-29DTEMP 10-61ENDDATA 3-38ERR1 11-3EXP 5-2FALL 4-22FIL 3-38FIND 4-25FREELIB 29-7FREQ 27-5FROM 4-32FS 9-18GAUSS 10-41, 26-7GOAL 4-24, 11-3HAMM 26-7HANN 26-7HARRIS 26-7IC 6-12IGNOR 4-31

INTEG 4-24, 4-30INTEGRAL 4-30KAISER 26-7LAM 3-38, 3-42LAST 4-22, 4-25, 4-27LIMIT 10-41LIN 7-6, 8-5, 9-5MAX 4-24MAXFLD 9-18MER 3-38, 3-41MIN 4-24MINVAL 4-24, 4-32MODEL 8-4, 11-5MONTE 7-5, 9-5, 10-39NODESET 6-11NONE 6-9, 6-12NORM 26-6NUMF 9-18OCT 7-6, 8-5, 9-5OPT 11-4, 28-7OPTIMIZE 8-4, 11-4PAR 10-5PASSFAIL 28-7PE 5-2PL 5-2PLOT 4-56POI 7-6, 8-5, 9-5POWER 4-16PP 4-23, 4-24PU 5-2PULSE 5-2PWL 5-2R 5-2RD 5-2RECT 26-7RESULTS 8-4

Index L


RIN 9-19RISE 4-22RMS 4-24ROUT 9-19SFFM 5-2SIN 5-2source functions 5-2START 7-5SWEEP 7-6, 8-5, 9-5TARG 4-21TD 4-14, 4-25TEMP 8-5, 9-5TO 4-24, 4-32TOL 9-18TOP 6-12TRIG 4-21UIC 7-6UNIF 10-41UNORM 26-6VOLTAGE 6-9WEIGHT 4-32weight 4-25WHEN 4-25YIN 9-13, 9-20YMAX 4-32YMIN 4-31YOUT 9-13, 9-20ZIN 9-13, 9-20ZOUT 9-13, 9-20

KF model parameter 9-17Kirchhoff’s Current Law test 6-17Kxxx inductor element statement 12-26,

12-30

L

L element parameter 22-11, 22-14LAM keyword 3-38, 3-42lambda equations, MOSFET Level 6 17-

63, 17-65laminated data 3-42LAPLACE

element parameter 27-10function 25-1, 27-2, 27-5, 27-6, 27-

21–27-25transconductance element state-

ment 27-6voltage gain element statement

27-6Laplace

transfer function 27-2, 27-17transform 27-2, 27-6, 27-18, 27-19

frequency analysis 27-10frequency response table 27-8inverse 27-30

LAST keyword 4-22, 4-25, 4-27latency option 16-11latent devices

BYPASS option 7-8, 7-11BYTOL option 7-11excluding 7-12MBYPASS option 7-11removing from simulation 7-11VNTOL option 7-11

latent devices, bypassing 16-11Lattin-Jenkins-Grove model 16-4layout parameter extraction 20-55LC oscillator model 23-100

L Index


LDAC parameter 16-103leadframe example 20LENGTH model parameter 10-46LENNAM option 3-50LEVEL

diode parameter 13-3element parameter 27-10model parameter 22-15, 22-17model selector 15-3optimization parameter 11-8

levels, MOSFET models 16-2, 16-3LEVIN model parameter 23-87LEVOUT model parameter 23-87.LIB

call statement 3-61definition statement 3-62

building libraries 3-62statement 3-21, 3-58

in .ALTER blocks 3-61nesting 3-63

.LIB statementin .ALTER blocks 10-30with .DEL LIB 10-31with multiple .ALTER statements

10-31libraries

adding with .LIB 10-31ASIC cells 3-57building

rules 3-64with .LIB definition 3-62

defining macros 3-62deleting 10-31Discrete Device Library 3-56

accessing 3-59duplicated parameter names 10-19.END statement 3-64networks 3-62numbers 3-62parts directory 3-60path names 3-62private 3-67protecting 3-67, 29-1search

order 3-57path 3-57

selecting 3-59subcircuits 3-58vendors 3-57, 10-29

LIMITkeyword 10-41Monte Carlo function 10-16

limit descriptors command 4-9LIMPTS option 3-50LIMTIM option 3-50LIN keyword 7-6, 8-5, 9-5linear region equations, MOSFET Level

47 17-234.lis file 4-2, 4-3LIST option 3-50, 3-55listing

page width 4-51suppressing 3-67

LLEV model parameter 22-15, 22-17LMAX model parameter 5LMIN model parameter 5local parameters 3-53, 10-19local truncation error algorithm 7-10, 7-

Index M


14, 7-25, 7-26timestep 7-13

log(x) function 10-6log10(x) function 10-6logarithm function 10-6logic interface 20-18logical units, FORTRAN 3-62lossless transmission lines 22-6

model 22-99lossy transmission lines 22-6, 22-12

model 22-100lossy U model 22-15LSCAL option 8-11, 25-4Lscaled scaled length 12-6Lsim models, calibrating 20-1lumped parameters 22-22LUMPS element parameter 22-14LV 4-35LV18 model parameter 15LVLTIM option 7-9, 7-10, 7-13, 7-14, 7-

19, 7-25timestep control 7-27

LX 4-35LX7 model parameter 15LX8 model parameter 15LX9 model parameter 15Lxxx inductor element statement 12-23,

12-28, 12-29

M

Melement parameter 23-21, 23-27, 27-

10multiplier parameter

U and T elements 22-5.ma# file 4-2, 4-4mA741 op-amp 23-93.MACRO statement 10-27, 23-9macros

defining with .LIB definition 3-62deleting library data 10-31See also subcircuits

magnetic coresmodels 3-65

ferromagnetic core 12-33names 12-31parameters 12-5, 12-32, 12-35saturable core 12-29statement 12-31

outputs (table) 12-36magnetic windings

DC resistance 12-29element parameters 12-4initial current 12-29names 12-29number of turns 12-29parasitic resistance 12-3

magnitudeAC voltage 9-10calculating 9-9

MANU model parameter 23-87manufacturing tolerances 10-46Marquardt scaling parameter 11-20mask (digital vector file) 5-68matrixes

calculations 6-18

M Index


minimum pivot values 6-20parameters 9-19row/matrix ratio 6-20size limitation 6-20

MAXelement parameter 23-21, 23-27, 23-

32, 23-36, 27-10function 28-5keyword 4-24optimization parameter 11-8

max(x,y) function 10-7MAXAMP option 6-17, 7-12, 9-7MAXD model parameter 22-17MAXF

element parameter 27-10parameter 27-6

MAXFLD keyword 9-18maximum number size 3-49maximum value, measuring 4-23MAXORD option 7-10Maxwell matrix 22-36MBYPASS option 7-11, 7-12, 16-11mean, statistical 10-3MEASDGT option 3-50measfail value 28-8MEASOUT option 3-51measure data output formatting 3-50.MEASURE statement 3-50, 3-51

failure message 4-20parameters 10-17

Mentor interface 3-51MENTOR option 3-51MER keyword 3-38, 3-41

MESFET’sarea multiplying factor 15-8capacitance equations 15-6, 15-29CAPOP=2 model parameters 15-33control options 15-5DC

model equation selector 15-16voltage equations 15-35

elementsnames 15-7, 15-8statement 15-7

initial conditions 15-8initial voltages 15-8length 15-8models

constants 15-14names 15-8, 15-16parameters 15-17statements 15-16variables 15-14

n-channel specification 15-16noise

equations 15-39parameters 15-39summary printout 15-41

p-channel specification 15-16scaling 15-9temperature

differential 15-8equations 15-45–15-49

width 15-8messages

pivot change 6-19See also errors, warnings

Meta Encryptor 24-2

Index M


Meta I/Ocommand syntax 24-10commands 24-10–24-17ExitMeatIoApi function 24-18GetConvFunction command 24-15GetConvType command 24-17GetFileMask command 24-13GetHspiceDir command 24-12GetIbisDescripDir command 24-11GetIbisTemplateDir command 24-

12GetInFileSuffix command 24-13GetOutFileSuffix command 24-14GetTmpDir command 24-13GetVerDir command 24-12Iterate command 24-17SelectFiles command 24-7, 24-14SetConvFunc command 24-5SetConvFunction command 24-15SetConvType command 24-16SetDefTemplate command 24-6SetFileMask command 24-7, 24-13SetHspiceDir command 24-5, 24-12SetIbisDescripDir command 24-5,

24-11SetIbisTemplateDir command 24-5,

24-6, 24-12SetInFileSuffix command 24-7, 24-

13SetOutFileSuffix command 24-7,

24-14SetTmpDir command 24-13SetVerDir command 24-5, 24-12TemplateMap command 24-6UnSelectFiles command 24-15UnselectFiles command 24-7

metaio command 24-8metal contact 16-25MetaWaves interface 4-2METHOD option 7-10Meyer model 16-59microstrip transmission line 22-23MIN

element parameter 23-21, 23-27, 23-32, 23-36

keyword 4-24min(x,y) function 10-7minimum number size 3-49minimum value, measuring 4-23MINVAL keyword 4-24, 4-32mixed mode

See also D2A, A2Dsimulation 5-46

mixed mode simulation 23-4mixed-signal simulation

see mixed modemobility

equations, MOSFET Level 47 17-232

parameterscurve fitting 17-12MOSFET’s

Level 2 17-11Level 3 17-23Level 38 17-171Level 5 17-36Level 8 17-94

reduction equations, MOSFET’sLevel 2 17-15Level 38 17-179

M Index


Level 5 17-49temperature equations, JFET and

MESFET 15-48MODEL keyword 8-4, 11-5model names, periods in 19-3model parameters

.ALTER blocks 10-31A2D 5-46analog to digital

CGGONLY 23-43CLOAD 23-43RLOAD 23-43S19NAME 23-43S19VHI 23-43S19VLO 23-43S1NAME 23-43S1VHI 23-43S1VLO 23-43S2NAME 23-43S2VHI 23-43S2VLO 23-43SONAME 23-43SOVHI 23-43SOVLO 23-43TIMESTEP 23-43

BISECTION 28-7BJT’s

AF 14-26base width modulation 14-22BEX 14-27BEXV 14-27BF 14-19BFM 14-19BR 14-19BRM 14-19

BRS 14-26BULK 14-19BV 14-22C2 14-21C4 14-21CBEP 14-25CCSP 14-25CDIS 14-24CJC 14-23CJE 14-24CJS 14-24CPBP 14-25CSUB 14-24CTC 14-28CTE 14-28CTS 14-28EG 14-28ESUB 14-24, 14-29EXPLI 14-19FC 14-24GAMMA 14-26GAP1 14-28GAP2 14-29high current Beta degradation

14-22IBC 14-19IBE 14-19IBR 14-22IK 14-22IKF 14-17, 14-22IKR 14-17, 14-22IOB 14-23IS 14-20ISC 14-17, 14-21ISE 14-17, 14-21ISS 14-20

Index M


ITF 14-25JBF 14-22JLC 14-21JLE 14-21JRB 14-23JTF 14-25junction capacitance 14-23KF 14-26LEVEL 14-20Level 2 14-26low current Beta degradation 14-

21MC 14-24, 14-29ME 14-24, 14-29MJC 14-24, 14-29MJE 14-24, 14-29MJS 14-24, 14-29model name 14-16NC 14-17, 14-21NE 14-17, 14-21NEPI 14-26NF 14-20NKF 14-22NLC 14-21NLE 14-21noise 14-26NPN 14-16NR 14-20NS 14-20NSUB 14-19parasitics

capacitance 14-25resistance 14-23

PC 14-24PE 14-24PNP 14-16

PSUB 14-24PTF 14-25QCO 14-26RB 14-23RBM 14-23RC 14-23, 14-26RE 14-23SUBS 14-20TB 14-32TBF1 14-29TBF2 14-29TBR1 14-29TBR2 14-29TCB 14-32temperature

effects 14-27parameters 14-27

TF 14-25TIKF1 14-29TIKF2 14-29TIKR1 14-29TIKR2 14-29TIRB1 14-29TIRB2 14-29TIS1 14-30TIS2 14-30TISC1 14-29TISC2 14-29TISE1 14-30TISE2 14-30TISS1 14-30TISS2 14-30TITF1 14-30TITF2 14-30TLEV 14-30TLEVC 14-30

M Index


TMJC1 14-30TMJC2 14-30TMJE1 14-31TMJE2 14-31TMJS1 14-31TMJS2 14-31TNC1 14-31TNC2 14-31TNE1 14-31TNE2 14-31TNF1 14-31TNF2 14-31TNR1 14-31TNR2 14-31TNS1 14-31TNS2 14-31TR 14-25transit time 14-25TRB 14-31TRB1 14-31TRB2 14-31TRC 14-31TRC1 14-31TRC2 14-31TRE 14-31TRE1 14-31TRE2 14-31TRM1 14-31TRM2 14-31TTF1 14-31TTF2 14-31TTR1 14-32TTR2 14-32TVAF1 14-32TVAF2 14-32TVAR1 14-32

TVAR2 14-32TVJC 14-32TVJE 14-32TVJS 14-32UPDATE 14-20VA 14-22VAF 14-22VAR 14-22VB 14-22VBF 14-22VJC 14-24VJE 14-24VJS 14-24VO 14-26VRB 14-22VTF 14-25XCJC 14-24XTB 14-32XTF 14-25XTI 14-32

BV 13-3capacitance 12-5

CAP 12-19CAPSW 12-19COX 12-19DEL 12-19DI 12-19L 12-19SHRINK 12-19TC1 12-19TC2 12-19THICK 12-19TREF 12-19W 12-19

capacitance distribution 10-48capacitors 12-5

Index M


D2A 5-46DELVTO 10-34digital to analog 23-40

CHI 5-48, 23-41CLO 5-48, 23-40S19NAME 5-48, 23-41S19RHI 5-48, 23-41S19RLO 5-48, 23-41S19TSW 5-48, 23-41S1NAME 23-41S1RHI 23-41S1RLO 23-41S1TSW 23-41S2NAME 5-48, 23-41S2RHI 5-48, 23-41S2RLO 5-48, 23-41S2TSW 5-48, 23-41SINAME 5-48SIRHI 5-48SIRLO 5-48SITSW 5-48SONAME 5-48, 23-41SORHI 5-48, 23-41SORLO 5-48, 23-41SOTSW 5-48, 23-41TIMESTEP 5-48, 23-41

diodes 13-5CTA 13-22CTC 13-22CTP 13-22EG 13-23GAP1 13-23GAP2 13-23junction 13-14, 13-15

AREA 13-16BV 13-18

capacitanceCJ 13-19CJA 13-19CJO 13-19CJP 13-19CJSW 13-19EXA 13-19EXP 13-19FC 13-19FCS 13-19M 13-19MJ 13-19MJSW 13-19PB 13-19PHA 13-19PHI 13-19PHP 13-20TT 13-20VJ 13-19

D 13-14, 13-17diode type 13-14EXPLI 13-16IB 13-16IBV 13-16IK 13-16IKF 13-16IKR 13-16IS 13-17ISP 13-17JBF 13-16JBR 13-16JS 13-17JSW 13-17LEVEL 13-14, 13-17model names 13-14N 13-17

M Index


PJ 13-17RS 13-18SHRINK 13-18VAR 13-18VB 13-18VRB 13-18XW 13-18

level 13-3noise

AF 13-21KF 13-21

scaling 13-9TCV 13-23TLEV 13-23TLEVC 13-23TM1 13-23TM2 13-23TPB 13-23TPHP 13-23TREF 13-23TRS 13-24TTT1 13-24TTT2 13-24TVJ 13-23XTI 13-24

DTEMP 10-61Fowler-Nordheim diodes

D 13-37EF 13-37ER 13-37JF 13-37JR 13-37TOX 13-37W 13-37XW 13-37

FREQ 4-56

geometric 12-5geometry, JFET and MESFET 15-9IKF 14-2IKR 14-2JFET

A 15-25ACM 15-18, 15-26AF 15-39ALIGN 15-18ALPHA 15-25AREA 15-18BETA 15-23, 15-25BETATCE 15-43, 15-52BEX 15-43CALPHA 15-20, 15-33capacitance 15-33CAPDS 15-20, 15-52CAPOP 15-20CGAMDS 15-21, 15-33CGD 15-21CGS 15-21CRAT 15-21CTD 15-43CTS 15-43CVTO 15-21, 15-33D 15-25DC


DELTA 15-25, 15-52EG 15-43FC 15-21, 15-33GAMDS 15-25GAMMA 15-25GAP1 15-43

Index M


GAP2 15-44gate capacitance 15-20gate diode DC 15-18GCAP 15-21GDSNOI 15-39HDIF 15-18IS 15-18K1 15-25KF 15-39L 15-19LAM1 15-23LAMBDA 15-23, 15-25LDEL 15-19LDIF 15-19LEVEL 15-23, 15-25M 15-21, 15-33, 15-44MJ 15-33, 15-44N 15-19, 15-44NCHAN 15-25ND 15-23, 15-25NG 15-23, 15-24, 15-25NLEV 15-39noise 15-39PB 15-22Q 15-26RD 15-19RG 15-19RS 15-19RSH 15-19RSHG 15-19RSHL 15-19SAT 15-26SATEXP 15-26TCV 15-44TDR1 15-44temperature 15-43

TLEV 15-44TLEVC 15-44TPB 15-44TRD 15-44TRG 15-44TRG1 15-44TRS 15-44TRS1 15-44TT 15-22UCRIT 15-26VBI 15-26VDEL 15-33VGEXP 15-26VP 15-26VTO 15-23, 15-24, 15-26VTOTC 15-44W 15-20WDEL 15-20XTI 15-45

JFET and MESFET 15-17DCAP 15-29LEVEL 15-16level selector 15-3NIF 15-16PIF 15-16See also model parameters, JFET

LENGTH 10-46LEVEL 11-8magnetic cores 12-32, 12-35

A 12-35AC 12-32, 12-35ALPHA 12-35AREA 12-35BR 12-32BS 12-32C 12-35

M Index


HC 12-32HCR 12-32HS 12-32K 12-35LC 12-32, 12-35LEVEL 12-35LG 12-32MS 12-35PATH 12-35TC 12-32

manufacturing tolerances 10-46MESFET

noise 15-39See also model parameters, JFET

metal and poly capacitorsLM 13-20LP 13-20WM 13-20WP 13-20XM 13-20XOI 13-20XOM 13-20XP 13-20

MONO 4-56MOSFET’s

LEVEL 16-28NMOS 16-28PMOS 16-28

op-amps 23-84AV 23-84AV1K 23-84AVD 23-84BW 23-86C2 23-85CMRR 23-85COMP 23-83, 23-85

DEF 23-85default values 23-89DELPHS 23-86DIS 23-86FREQ 23-86GBW 23-86IB 23-86IBOS 23-86ISC 23-87JIS 23-87LEVIN 23-87LEVOUT 23-87MANU 23-87PS 23-87PWR 23-87RAC 23-87ROAC 23-87ROUT 23-88SRN 23-88SRNEG 23-88SRP 23-88SRPOS 23-88TEMP 23-88VCC 23-88VEE 23-88VON 23-88VONEG 23-88VOP 23-89VOPOS 23-89VOS 23-89

PHOTO 10-46resistance 12-5RSH 10-34saturable cores 12-5skew 10-33SUBS 14-2

Index M


suppressing printout of 3-52TEMP 3-43, 10-61temperature 12-5TIC 4-56TOM model 15-50, 15-52TOX 10-34transmission lines

geometriccoax models 22-28models 22-26twinlead models 22-30

loss parameters 22-19measured parameters 22-38planar models 22-17precomputed parameters 22-32

TREF 10-62U models

AT1 22-38ATLEN 22-38CAPL 22-38CEXT 22-17, 22-26, 22-28, 22-

30CLEN 22-38CMULT 22-17, 22-26, 22-28,

22-30CORKD 22-17, 22-27D12 22-30DELAY 22-38DELEN 22-38DLEV 22-15, 22-17, 22-26, 22-

30ELEV 22-15, 22-17FR1 22-38HGP 22-17, 22-26, 22-28, 22-30HT 22-17, 22-26HT1 22-26

KD 22-17, 22-26, 22-28, 22-30KD1 22-26KD2 22-27LEVEL 22-15, 22-17LLEV 22-15, 22-17MAXD 22-17measured parameters 22-37ND 22-17NL 22-26NLAY 22-19, 22-26OD1 22-31PLEV 22-15, 22-17, 22-38RA 22-28RA1 22-30RB 22-28RD 22-28RHO 22-19, 22-26, 22-28, 22-30RHOB 22-19, 22-26, 22-28, 22-

31SHTHK 22-28, 22-31SIG 22-19, 22-26, 22-28, 22-30SIG1 22-26SP 22-17, 22-26SP12 22-26TH 22-17, 22-26TH1 22-26THB 22-17, 22-26THK1 22-26THK2 22-26TS 22-17, 22-26TS1 22-30TS2 22-31TS3 22-31VREL 22-38WD 22-17, 22-26WD1 22-26

M Index


WLUMP 22-17XW 22-17, 22-26ZK 22-38

wire models 12-5BULK 12-12CAP 12-12CAPSW 12-12COX 12-12CRATIO 12-10DI 12-12DLR 12-12DW 12-12L 12-12LEVEL 12-12R 12-9RAC 12-12RES 12-12RSH 12-12SHRINK 12-12table 12-12TC1C 12-12TC1R 12-12TC2C 12-12TC2R 12-12THICK 12-12TREF 12-12W 12-13

XGRID 4-56XL 10-34XMAX 4-56XMIN 4-56XPHOTO 10-47XSCAL 4-56XW 10-34YGRID 4-56YMAX 4-57

YMIN 4-57YSCAL 4-57

model parameters, MESFETmodel selection

automatic 19-1–19-4failure to find a model 19-3program 16-7, 19-3See also automatic model selection

.MODEL statement 12-4, 16-3BISECTION syntax 28-7BJT 14-16capacitance 12-18digital model 23-40diode junction 13-14ferromagnetic cores 12-35HSPICE version parameter 3-66JFET and MESFET 15-16magnetic core 12-31MOSFET 16-28op-amp 23-83OPT method 28-7optimization syntax 11-7PASSFAIL syntax 28-7U model 22-15wire RC 12-9

modelsalgebraic 7-20area calculation method selector 15-

3automatic selection 16-7BJT’s 3-65, 3-66BSIM Level 13 3-66BSIM2 Level 39 3-66bulk charge effect 16-2capacitance 12-18, 16-6

Index M


capacitors 3-65capacitors, model selector 15-3characterization 8-3Curtice 15-3depletion MOS devices 16-2digital 23-40diodes 3-65, 13-3

junctions 13-14Ebers-Moll 14-1ferromagnetic cores 12-33Gummel-Poon 14-1ion-implanted devices 16-2JFET and MESFET

capacitor 15-5DC models 15-1

JFET’s 3-65magnetic core 3-65, 12-31MOSFET’s 3-65

levels 16-2, 16-3mutual inductors 3-65names 12-4, 12-7op-amps 3-65

creating 23-82optimization 3-65parameters 12-4

DTEMP 26LV18 15LX7, LX8, LX9 15scaling 16-10

plot 3-65private 3-67protecting 3-67references 12-2resistors 3-66scaling 16-11selecting 15-3

silicon-on-sapphire 16-2simulator access 3-64SOSFET 16-2specifying 3-57Statz 15-2, 15-3TOM 15-2TriQuint 15-2types 12-4typical set 10-37–10-38wire RC 12-9

MONO model parameter 4-56Monte Carlo

AC analysis 9-4analysis 10-3, 10-51–10-59

demo files 35distribution options 10-41–10-42functions 10-16

DC analysis 8-4time analysis 7-4

MONTE keyword 7-5, 9-5, 10-39MOS2 model 16-3MOS3 model 16-3MOSFET’s

BEX factor 17-129bulk transconductance 16-19capacitance

equations 16-77–16-103Meyer model 16-59models 16-59scaling parameters 16-72

CAPOP capacitance selector 16-77–16-103

channellength 16-12

modulation temperature

M Index


equations 16-116width 16-13

chargeconservation model parameters

16-74storage modeling 16-59

conductance 16-18construction 16-25control options (list) 16-9current convention 16-17current flow 4-14diodes

capacitanceequations 16-49model parameters 16-30temperature equations 16-

111DC

current equations 16-48model parameters 16-30

effective areas 16-35, 16-38, 16-42, 16-46

effective drain and source resis-tance 16-36, 16-39, 16-44, 16-47

effective saturation current 16-35, 16-38, 16-43, 16-47

GEO element parameter 16-45geometry model parameters 16-

33model parameters 16-30

ACM 16-30CBD 16-30CBS 16-30CDB 16-31CJ 16-31

CJA 16-31CJGATE 16-31CJP 16-31CJSW 16-31CSB 16-31DLAT 16-33DNB 16-31DW 16-33EXA 16-31EXD 16-31EXJ 16-31EXP 16-31EXS 16-31FC 16-31IS 16-30JS 16-30JSW 16-30LATD 16-33LD 16-33LDIF 16-33LRD 16-32LRS 16-32MJ 16-31MJSW 16-31N 16-30NB 16-31NDS 16-30NSUB 16-31PB 16-31PHA 16-31PHD 16-31PHP 16-31PHS 16-31PRD 16-32PRS 16-32RD 16-32

Index M


RDC 16-32RL 16-32RS 16-32RSC 16-32RSH 16-32TT 16-31VNDS 16-30WDEL 16-33WMLT 16-33WRD 16-32WRS 16-32XJ 16-33XW 16-33

resistancemodel parameters 16-32temperature equations 16-

116suppressing 16-40

draindiffusion area 16-13resistance due to contact resis-

tance 16-13effective output conductance 16-56elements

names 16-12parameters (list) 16-15statement 16-12variables and constants 16-15

energy gap temperature equations16-110

equation variables and constants 16-16

equivalent circuits 16-18gate

capacitance model parameters16-72

overlap capacitance model pa-rameters 16-73

impact ionization equations 16-19,16-55

initial conditions 16-14initial voltage values 16-14level parameter 16-28Levels 6, 7 UPDATE selector 17-59Meyer capacitance model

parameters 16-74mobility temperature equations 16-

116model names 16-12model parameters

A 17-142A0 17-225, 17-243A1 17-84, 17-86, 17-95, 17-225,

17-244A1R 17-261A2 17-84, 17-225, 17-244A2R 17-262A3R 17-262ACM 17-188AF 16-104AFC 17-37, 17-173AGS 17-244AI0 17-185AIB 17-185ALPHA 16-55, 17-142, 17-190ALPHA0 17-245ALPR 17-260AT 17-224, 17-248B0 17-244B1 17-151, 17-244B2 17-151BET 17-2, 17-8, 17-20

M Index


BETA 17-2, 17-8, 17-20BETA0 17-245BetaGam 17-170BETSQ 17-259BEX 16-107, 17-111, 17-158,

17-173, 17-190BFRC 17-172BI0 17-186BIB 17-186BULKMOD 17-226C1 16-73C2 16-73CAPOP 16-72, 17-37, 17-142,

17-173, 17-188CAV 17-93CDSC 17-225, 17-244CDSCB 17-225, 17-244CDSCD 17-244CF1 16-74CF2 16-74CF3 16-74CF4 16-74CF5 16-74CF6 16-74CGB 16-73CGBEX 16-74CGBO 16-73, 17-105, 17-152,

17-187CGBOM 17-105CGD 16-73CGDO 16-73, 17-105, 17-141,

17-142, 17-152, 17-186,17-212

CGDOM 17-105CGS 16-73CGSO 16-73, 17-105, 17-141,

17-142, 17-152, 17-187,17-212

CGSOM 17-105CHI 17-211CIT 17-225, 17-244CJ 17-109, 17-187CJM 17-109CJSW 17-109, 17-187CJW 17-109CLM 17-54, 17-95CO 16-72COL 17-262COX 16-72, 17-2, 17-8, 17-20,

17-91CSC 17-212CTA 16-107CTP 16-107DEFF 17-211DEL 17-3, 17-9, 17-21, 17-36,

17-56, 17-92, 17-169DELL 17-186DELTA 17-10, 17-22, 17-93, 17-

245DELVTO 16-52, 17-189DERIV 17-20, 17-188DFS 17-4, 17-10, 17-23, 17-57,

17-93, 17-94DIBL 17-171DL 17-4, 17-10, 17-22, 17-57,

17-93, 17-111, 17-157,17-184, 17-223

DL0 17-105DLAT 16-73, 17-3, 17-9, 17-21,

17-56, 17-92, 17-110,17-156

DLC 17-247

Index M


DNB 16-52, 17-4, 17-11, 17-23,17-35, 17-54, 17-94, 17-169

DND 17-86DNF 17-4, 17-11, 17-23, 17-94DNS 17-54DP 17-35, 17-169DROUT 17-225, 17-245DS 17-109DSUB 17-225, 17-243DUM1 17-105DUM2 17-105DVIN 17-171DVSBC 17-170DVT0 17-223, 17-243DVT0W 17-243DVT1 17-223, 17-243DVT1W 17-243DVT2 17-223, 17-243DVT2W 17-243DW 17-4, 17-10, 17-22, 17-57,

17-93, 17-111, 17-157,17-184, 17-223

DW0 17-105DWB 17-247DWC 17-247DWG 17-247E1 17-211E2 17-211EC 17-142ECRIT 17-8, 17-54, 17-81, 17-

91ECV 17-35, 17-169EG 16-107EM 17-224ESAT 17-8, 17-54, 17-91

ETA 17-22, 17-93, 17-171, 17-211, 17-224

ETA0 17-105, 17-152, 17-184,17-224, 17-243

ETAALP 17-260ETAB 17-184, 17-224, 17-243ETABET 17-259ETADSR 17-260ETAGAMR 17-261ETAMN 17-152ETAMR 17-261ETAZET 17-261F1 17-79, 17-80, 17-81F1EX 16-107, 17-172F2 17-12, 17-80, 17-81, 17-95F3 17-79, 17-80, 17-81F4 17-80FB 17-142FDS 17-57FEFF 17-212FEX 17-111, 17-158, 17-190FRC 17-36, 17-171FRCEX 17-172FREQ 17-212FSB 17-36, 17-172FSS 17-36, 17-170GAM1R 17-260GAMMA 16-52, 16-53, 17-4,

17-10, 17-22, 17-54, 17-93

GAMMA1 17-222, 17-249GAMMA2 17-222, 17-249GAMMN 17-152GAMOOR 17-261GAP1 16-108GAP2 16-108

M Index


GDS 17-54GDSNOI 16-104GO 17-211HEX 17-173IIRAT 16-55, 17-190IJS 17-109impact ionization 16-55JS 17-109, 17-187JSW 17-109K1 17-105, 17-152, 17-184, 17-

222, 17-242K2 17-106, 17-152, 17-184, 17-

212, 17-222, 17-242K3 17-222, 17-242K3B 17-222, 17-242KA 17-58, 17-85KAPPA 17-20KBeta1 17-173KCL 17-85KCS 17-169KETA 17-225, 17-244KF 16-104KI0 17-173KIO 17-173KL 17-84, 17-87KOR 17-258KP 17-2, 17-8, 17-20KR 17-259KT1 17-222, 17-248KT1L 17-226KT2 17-222, 17-248KU 17-59, 17-85LA 17-2, 17-8, 17-84, 17-85, 17-

95LALPHA 16-55LAM 17-2, 17-8, 17-84, 17-85,

17-95LAM1 17-87, 17-95LAMBDA 17-2, 17-8, 17-84,

17-85, 17-86, 17-87, 17-95

LAMEX 16-108LAP 17-258LATD 16-73, 17-3, 17-9, 17-21,

17-36, 17-56, 17-92, 17-110, 17-156, 17-169

LB1 17-151LB2 17-152LBetaGam 17-170LBFRC 17-172LD 16-73, 17-3, 17-9, 17-21, 17-

36, 17-56, 17-92, 17-110,17-141, 17-142, 17-156,17-169, 17-188

LDAC 17-3, 17-9, 17-21, 17-92,17-110, 17-156, 17-169,17-189

LDAC parameter 17-56LDD 17-224LDEL 17-4, 17-10, 17-22, 17-

57, 17-93, 17-111, 17-157

LDVSBC 17-170LER 17-258LETA 17-105, 17-152, 17-171LETAMN 17-152LEVEL 17-2, 17-8, 17-20, 17-

35, 17-53, 17-91, 17-105,17-142, 17-151, 17-169

LFRC 17-171LFSB 17-172LGAMMA 17-54

Index M


LGAMN 17-152LINT 17-247LITL 17-224LK1 17-106, 17-152LK2 17-106, 17-152LKBeta1 17-173LKI0 17-173LKIO 17-173LL 17-247LLN 17-247LMAX 17-248LMIN 17-248LMLT 17-3, 17-9, 17-21, 17-36,

17-56, 17-92, 17-110,17-156, 17-170, 17-188

LMS 17-106LMUS 17-106LMUZ 17-106, 17-153LN0 17-10, 17-22, 17-57, 17-94,

17-106, 17-153LNB 17-106, 17-153LND 17-10, 17-22, 17-57, 17-

93, 17-107, 17-153LPHI 17-107, 17-153LREF 17-9, 17-10, 17-21, 17-56,

17-92, 17-110, 17-156,17-189

LU0 17-107, 17-153LU1 17-107, 17-154LUB 17-172LUO 17-172LVAR 17-258LVCR 16-55LVFB 17-107, 17-154LVFRC 17-171LVT 17-170

LVTO 17-170LW 17-247LWFAC 17-154LWFACU 17-154LWL 17-247LWN 17-247LX2E 17-107, 17-154LX2M 17-107, 17-154LX2MS 17-108LX2MZ 17-107, 17-154LX2U0 17-108, 17-155LX2U1 17-108, 17-155LX33M 17-155LX3E 17-108, 17-155LX3MS 17-108, 17-155LX3U1 17-108, 17-155MAL 17-59, 17-85MBL 17-59MCL 17-85METO 16-73, 17-37, 17-173MJ 16-108, 17-109, 17-187MJ0 17-109MJSW 16-108, 17-109, 17-187MJW 17-109MOB 17-11, 17-54, 17-81, 17-94MOBMOD 17-241MOR 17-261MU0 17-184MU0B 17-184MU20 17-184MU2B 17-184MU2G 17-184MU30 17-184MU3B 17-185MU3G 17-185MU40 17-185

M Index


MU4B 17-185MU4G 17-185MUS 17-106MUS0 17-184MUSB 17-184MUZ 17-106, 17-152N 16-108N0 17-10, 17-22, 17-57, 17-94,

17-106, 17-153, 17-185NB 16-52, 17-4, 17-11, 17-23,

17-94, 17-185NB0 17-106, 17-153NCH 17-242ND 17-10, 17-22, 17-57, 17-94,

17-185ND0 17-106, 17-153NEFF 17-9NF 17-4, 17-10, 17-23, 17-57,

17-94NFACTOR 17-224, 17-244NFR 17-262NFS 17-4, 17-10, 17-23, 17-36,

17-57, 17-93, 17-94, 17-170, 17-211

NGATE 16-52, 17-242NI 17-35, 17-54, 17-169NLEV 16-104NLX 17-222, 17-242NPEAK 17-223NSS 16-52, 17-211NSUB 16-52, 17-4, 17-11, 17-

23, 17-35, 17-54, 17-94,17-169, 17-223, 17-242

NTR 17-262NU 17-59, 17-211NWE 17-58

NWM 17-36, 17-54, 17-170OXETCH 17-36, 17-170PB 17-109, 17-187PBSW 17-187PCLM 17-225, 17-244PDIBL1 17-225PDIBL2 17-225PDIBLC1 17-245PDIBLC2 17-245PDIBLCB 17-245PHI 16-52, 16-53, 17-4, 17-11,

17-23, 17-35, 17-94, 17-169, 17-184, 17-211, 17-223

PHI0 17-107, 17-153PHIBR 17-259PHP 17-109PJ 17-109PJW 17-109PRWB 17-244PRWG 17-244PSCBE1 17-225, 17-245PSCBE2 17-225, 17-245PSI 17-211PTA 16-108PTC 16-108PTP 16-108PVAG 17-226, 17-245RD 17-212RDS0 17-224RDSW 17-224, 17-244RS 17-212RSH 17-109, 17-141, 17-142,

17-187, 17-245RSHM 17-109SATMOD 17-225

Index M


SCM 17-36, 17-54, 17-170SL2VTO 17-258SLA1 17-261SLA2 17-262SLA3 17-262SLALP 17-260SLGAM1 17-260SLGAMOO 17-261SLK 17-259SLKO 17-259SLMO 17-261SLTHE1 17-259SLTHE1R 17-259SLTHE2R 17-260SLTHE3R 17-260SLVSBT 17-261SLVSBX 17-259SLVTO 17-258SLZET1 17-261SNVB 17-91SOSLEV 17-141, 17-143SPICE3 17-188STA1 17-261STLTHE2 17-260STLTHE3 17-260STMO 17-261STTHE1R 17-259STTHE2R 17-259STTHE3R 17-260STVTO 17-258SUBTHMOD 17-225SWA1 17-261SWA2 17-262SWA3 17-262SWALP 17-260SWGAM1 17-260

SWK 17-259SWKO 17-259SWTHE1 17-259SWTHE2 17-260SWTHE3 17-260SWVSBX 17-259SWVTO 17-258T1 17-211T2 17-211TAU 17-212TCV 16-108, 17-111, 17-158,

17-190TDVSBC 17-170TEMP 17-183THE1R 17-259THE2R 17-259THE3R 17-260THETA 17-11, 17-23, 17-143,

17-211TLEV 16-109TLEVC 16-109TNOM 17-225TOX 16-72, 17-2, 17-9, 17-20,

17-35, 17-91, 17-107,17-141, 17-143, 17-153,17-169, 17-183, 17-223,17-242, 17-262

TOXM 17-107, 17-153TPG 16-52TPS 16-52TR 17-258TRD 16-109TREF 17-107, 17-111, 17-212,

17-225TRS 16-109TUH 17-35, 17-173

M Index


U0 17-223U00 17-107, 17-153U1 17-107, 17-153U10 17-185U1B 17-185U1D 17-185UA 17-224, 17-243UA0 17-185UA1 17-224, 17-248UAB 17-185UB 17-12, 17-23, 17-37, 17-54,

17-95, 17-172, 17-224,17-243

UB0 17-185UB1 17-224, 17-248UBB 17-185UBO 17-12, 17-23, 17-54, 17-95UC 17-224, 17-243UC0 17-226UC1 17-224, 17-248UCRIT 17-12, 17-94UEXP 17-12, 17-80, 17-81, 17-

95UFDS 17-58UH 17-37, 17-173UHSAT 17-173UO 17-2, 17-12, 17-23, 17-37,

17-54, 17-95, 17-142,17-143, 17-172, 17-211,17-243

UPDATE 17-55UTE 17-225, 17-248UTRA 17-12, 17-79, 17-80, 17-

81, 17-95VB 17-55VB0 17-55

VBB 17-183VBI 17-249VBM 17-223, 17-243VBX 17-223, 17-249VCR 16-55, 17-190VDD 17-183VDDM 17-107, 17-154VF1 17-80VFB 17-107, 17-154, 17-184,

17-226VFB0 17-107, 17-154VFDS 17-58VFRC 17-171VGG 17-183VGHIGH 17-184, 17-225VGLAM 17-86, 17-87VGLOW 17-184, 17-224VMAX 17-9, 17-20, 17-55, 17-

80, 17-91, 17-211VMX 17-9, 17-20, 17-55, 17-80,

17-91VOF0 17-185VOFB 17-185VOFD 17-185VOFF 17-224, 17-244VPR 17-261VSAT 17-9, 17-91, 17-224, 17-

244VSBTR 17-261VSBXR 17-259VSH 17-58VST 17-37, 17-173VT 16-52, 17-4, 17-11, 17-23,

17-36, 17-58, 17-94, 17-170

VTH0 17-242

Index M


VTHO 17-222, 17-242VTIME 17-212VTO 16-52, 16-53, 17-4, 17-11,

17-23, 17-36, 17-58, 17-94, 17-142, 17-143, 17-170, 17-211

VTOR 17-258W0 17-222, 17-242WALPHA 16-55WB1 17-151WB2 17-152WBetaGam 17-170WBFRC 17-172WD 16-73, 17-3, 17-9, 17-21,

17-56, 17-92, 17-110,17-157, 17-189

WDAC 17-3, 17-10, 17-21, 17-57, 17-92, 17-110, 17-157, 17-189

WDEL 17-4, 17-10, 17-22, 17-36, 17-57, 17-93, 17-111,17-157, 17-169

WDF 17-109, 17-186WDVSBC 17-170WER 17-258WETA 17-105, 17-152, 17-171WETAMN 17-152WEX 17-58WFAC 17-154WFACU 17-154WFRC 17-171WFSB 17-172WGAMN 17-152WIC 17-11, 17-23, 17-58, 17-94WINT 17-247WK1 17-106, 17-152

WK2 17-106, 17-152WKBeta1 17-173WKI0 17-173WKIO 17-173WLN 17-247WMAX 17-248WMIN 17-248WMLT 17-3, 17-10, 17-21, 17-

36, 17-57, 17-92, 17-110,17-157, 17-170, 17-189

WMS 17-106WMUS 17-106WMUZ 17-106, 17-153WN0 17-11, 17-23, 17-58, 17-

94, 17-106, 17-153WNB 17-106, 17-153WND 17-11, 17-23, 17-58, 17-

94, 17-107, 17-153WOT 17-258WPHI 17-107, 17-153WR 17-244WREF 17-10, 17-22, 17-57, 17-

93, 17-111, 17-157, 17-189

WS2MZ 17-108WU0 17-107, 17-153WU1 17-107, 17-154WUB 17-172WUO 17-172WVAR 17-258WVCR 16-55WVFB 17-107, 17-154WVFRC 17-172WVT 17-170WVTO 17-170WW 17-247

M Index


WWFAC 17-154WWFACU 17-154WWL 17-247WWN 17-247WX2E 17-107, 17-154WX2M 17-108, 17-154WX2MS 17-108WX2MZ 17-154WX2U0 17-108, 17-155WX2U1 17-108, 17-155WX33M 17-155WX3E 17-108, 17-155WX3MS 17-108, 17-155WX3U1 17-108, 17-155X2E 17-107, 17-154X2M 17-107, 17-154X2M2 17-107X2MS 17-108X2MZ 17-154X2U0 17-108, 17-154X2U1 17-108, 17-155X33M 17-155X3E 17-108, 17-155X3MS 17-108, 17-155X3U1 17-108, 17-155XJ 17-4, 17-10, 17-22, 17-36,

17-57, 17-93, 17-171,17-223, 17-242

XL 17-4, 17-10, 17-22, 17-57,17-93, 17-111, 17-157,17-188

XLREF 17-157, 17-189XPART 17-109, 17-155, 17-226XQC 16-74XT 17-223, 17-249XTI 16-109

XW 17-4, 17-10, 17-22, 17-57,17-93, 17-111, 17-157,17-189

XWREF 17-157, 17-189ZENH 17-35ZET1R 17-261

modelsAMD 16-4, 16-5ASPEC-AMI 16-4BSIM 16-4BSIM2 16-5BSIM3 16-5CASMOS 16-4CASMOS GEC 16-4CASMOS Rutherford 16-4Cypress 16-4Dallas Semiconductor 16-4Fluke-Mosaid 16-4GE-CRD-Franz 16-4GE-Intersil 16-4Grove-Frohman 16-3HSPICE PC version 16-3IDS Cypress depletion 16-5Lattin-Jenkins-Grove 16-4MOS2 16-3MOS3 16-3Motorola 16-5National Semiconductor 16-5Schichman-Hodges 16-3SGS-Thomson 16-5Sharp 16-5Siemens 16-4, 16-5Sierra 1 16-4Sierra 2 16-4Siliconix 16-4SOSFET 16-5

Index M


STC-ITT 16-4Taylor-Huang 16-4TI 16-5user defined 16-4VTI 16-5

multiply parameter 16-14n-channel specification 16-28node names 16-12noise 16-104

model equations 16-104model parameters 16-104summary printout 16-106

p-channel specification 16-28perimeter

drain junction 16-13source junction 16-13

power dissipation 4-18saturation current temperature

equations 16-111sensitivity factors 17-158source

diffusion area 16-13resistance due to contact resis-

tance 16-14source/drain sharing selector 16-14SPICE compatibility 16-3squares per drain diffusion 16-13squares per source diffusion 16-13surface potential temperature

equations 16-114temperature

coefficient model parameters 16-110

differential 16-14parameters 16-107

threshold voltage

model parameters 16-52temperature equations 16-115

transconductance 16-18UPDATE parameter usage 17-130voltages, initial 16-14WIC ids current selector 17-76zero bias threshold voltage shift 16-

14Motorola model 16-5MS model parameter 12-34.ms# file 4-2, 4-4MSPICE simulator interface 3-51.mt# file 4-2, 4-4MU option 7-12, 7-14Muller algorithm 25-3

starting points 8-12multiple .ALTER statements 10-31multiplier

function, U and T elements 22-5G and E element values 27-10GSCAL 8-11

multiply parameter 5-3, 10-27, 12-7, 12-17, 12-24, 13-7, 23-7

subcircuits 23-11multipoint experiment 3-3mutual

core elements 12-30coupling element parameters 12-4inductance 22-105inductors

coupling coefficient 12-27element parameters 12-3

N Index


N

narrow width effect 17-14National Semiconductor model 16-5natural frequency 25-2natural log function 10-6n-channel

JFET models 3-65MOSFET models 3-65

ND model parameter 22-17NDIM 5-20negative conductance, logging 3-49nested library calls 3-63.NET statement 9-19netlists 3-29

encrypting 29-1flat 3-29

networksanalysis 9-19filenames 3-43output 9-20

NEWTOL option 6-18NL

element parameter 22-11model parameter 22-26

NLAY model parameter 22-19, 22-26NODE option 3-51

suppressing listing 3-67nodes

connection requirements 3-31cross-reference table 3-51floating supply 3-31global versus local 3-25internal 3-31

MOSFET substrate 3-31names 3-29, 3-31, 3-33, 23-6, 15

ground node 3-31period in 3-30subcircuits 3-30, 3-31zeros in 3-33

numbers 3-29, 3-31phase or magnitude difference 9-9printing 3-51shorted 6-33terminators 3-31voltages, encrypting 29-1

NODESET keyword 6-11.NODESET statement 6-3, 6-15, 25-3

balancing input nodes 23-83DC operating point initialization 6-7from .SAVE 6-11

node-to-element list 6-19NOELCK option 3-52noise

calculations 9-17coupled line noise 20-26equations

BJT 14-45JFET and MESFET 15-39

folding 9-18input 4-15JFET and MESFET

equations 15-39summary printout 15-41

MOSFET 16-104numerical 7-8output 4-15, 9-17parameters

BJT 14-26

Index O


JFET and MESFET 15-39problems and solutions 20-3quota 20-6, 20-8resistor 12-8sampling 9-18sources 20-3, 20-5thermal 12-8

.NOISE statement 9-16NOMOD option 3-52NONE keyword 6-9, 6-12nonlinear

capacitor element parameters 12-3elements 12-3, 27-2inductor element parameters 12-3

NOPAGE option 3-52NOPIV option 6-18NORM FFT analysis keyword 26-6norm of the gradient 11-19NOTOP option 3-52NOWARN option 3-52NP .FFT parameter 26-6NPDELAY element parameter 23-22,

23-28, 23-32, 23-37npn BJT models 3-65NPWL

element parameter 23-22function 5-26, 23-20NMOS transistor function 23-17

numbersformatting 3-49, 3-50maximum size 3-49minimum size 3-49

NUMDGT option 3-52

numerical integrationalgorithms 7-10order of 7-10

numerical noise 7-8problems 6-16, 7-9

NUMF keyword 9-18NXX option 3-52Nyquist critical frequency 27-5, 27-10

O

O.C.G. matrix 22-35obtaining customer support viOCT keyword 7-6, 8-5, 9-5OD1 model parameter 22-31odelay (digital vector file) 5-68OFF

element parameter 6-4, 6-18option 6-4, 6-18

ONOISE parameter 4-15.OP statement 6-5, 7-3, 8-8OPAMP element parameter 23-32op-amps

.MODEL statement 23-83automatic generation 23-5behavioral models 23-82characterization 20-7common mode rejection ratio 23-85compensation level selector 23-85diode and BJT saturation current 23-

86element statement 23-83excess phase parameter 23-86gain parameter 23-84

O Index


inputbias current 23-86bias offset current 23-86level type selector 23-87offset current 23-86offset voltage 23-89short circuit current 23-87

internal feedback compenstationcapacitance 23-85

JFET saturation current 23-87mA741 model 23-93manufacturer’s name 23-87model

generator 23-82parameter defaults 23-89parameters 23-84selector 23-85

models 3-65open loops 6-32output

level type selector 23-87resistance ROAC 23-87slew rate 23-88voltage 23-88, 23-89

phase margin 23-86power

dissipation 23-87supply voltage 23-88

subcircuit generator 23-5temperature parameter 23-88unity gain frequency 23-86

operating pointcapacitance values table 6-14estimate 6-5, 7-3.IC statement initialization 6-6initial conditions 3-16

.NODESET statement initialization6-7

pole/zero analysis 25-3restoring 6-13saving 3-33, 6-11solution 6-3, 6-4, 6-18transient 7-3voltage table 6-9

operating point capacitor voltage 12-18operators, arithmetic 10-6operators, Laplace transforms 27-19OPT keyword 11-4, 28-7optimization

AC analysis 9-4, 11-27algorithm 11-8analysis statements 11-5behavioral models 23-63, 23-67bisection method 28-7convergence options 11-2curve-fit 11-3cv 41data output specification 3-52data-driven vs. s-parameters 11-27DC analysis 8-4, 11-12, 11-14, 11-

30, 11-34Device Model Builder 11-3error function 4-21example 32goal 11-3incremental 11-30iterations 11-8lengths and widths 11-37MODEL keyword 11-5.MODEL statement 11-7models 3-65

Index O


MOS level 13 11-14network 11-27of parameters

magnitude and phase 11-27measured vs. calculated 11-27

.PARAM statement 11-6parameters 11-27

CENDIF 11-7CLOSE 11-7CUT 11-8DIFSIZ 11-8GRAD 11-8ITROPT 11-8MAX 11-8PARMIN 11-8RELIN 11-9RELOUT 11-9

resultsMarquadt scaling parameter 11-

20norm of the gradient 11-19number of function evaluations

11-20number of iterations 11-20residual sum of squares 11-19

simultaneous 11-22, 11-34, 11-37s-parameters 11-27statements 11-4time analysis 7-5time required 11-2, 11-7

OPTIMIZE function 23-3OPTIMIZE keyword 8-4, 11-4.OPTION statement, .ALTER blocks

10-31options

AUTOSTOP 23-91DI 6-26, 7-12, 9-7EPSMIN 27-17OPTLST 28-8

OPTLST option 3-52, 28-8printing bisection results 28-8

OPTS option 3-52OPTxxx parameter 11-3, 11-4Opus 3-48oscillation, eliminating 7-10oscillators

behavioral models 23-82DELMAX option setting 7-19LC 23-100VCO 23-98

out (digital vector file) 5-71outer sweep 3-41output

admittance 9-13current 4-10, 4-11graphing 4-54impedance 9-13measfail value 28-8.MEASURE results 4-19noise 9-17plotting 4-52–4-53

specifying variables 4-54printing 4-47–4-51printout format 4-49saving 4-54variables

AC formats 9-11probing 4-54

voltage 4-10

P Index


output dataformat 3-48, 3-50, 3-54limiting 3-54, 7-9number format 3-49optimization 3-52redirecting 3-13significant digits specification 3-52specifying 3-50, 3-54storing 3-51, 3-53

output driver example 20output files

names 3-12, 3-15redirecting 3-15reducing size of 3-54, 3-55version number, specifying 3-12

output variablesfunction 10-7printing 7-9specifying significant digits for 3-52

outputs, magnetic cores, LX1 - LX7 12-36

outz (digital vector file) 5-71overlap capacitors 16-76overlay dielectric transmission line 22-

23

P

.pa# file 4-3, 4-5packed input files 3-17Pade approximation 27-37PADS-LPE extraction module 20-55,

20-59page eject, suppressing 3-52PAR keyword 10-5, 10-12

PAR parameter, example 20-12.PARAM statement 10-9–10-18, 23-11

in .ALTER blocks 10-30optimization 11-6

parametersAC sweep 9-4ACM 7-20admittance (Y) 9-8AF 9-17algebraic 10-6

expressions 10-4, 10-12CAPOP 7-20cell geometry 10-18constants 10-11data driven analysis 3-37data type 10-10DC sweep 8-3defaults 10-23defining 10-11, 10-20DIM2 4-15DIM3 4-15elements 12-2–12-4encrypting 29-1evaluation order 10-10.FFT statement

ALFA 26-7FMAX 26-7FMIN 26-7FORMAT 26-6FREQ 26-7FROM 26-6NP 26-6START 26-6STOP 26-6TO 26-6

Index P


WINDOW 26-7global 3-53HD2 4-15HD3 4-15hierarchical 4-34, 10-18hybrid (H) 9-8IC 6-6impedance (Z) 9-8inheritance 10-22, 10-23INOISE 4-15KF 9-17libraries 10-20–10-22local 3-53M 23-7M (multiply) 10-27matrix 9-19measurement 10-17models 12-4modifying 3-37Monte Carlo analysis 10-16names 4-6ONOISE 4-15optimization 10-15, 10-18OPTxxx 11-3, 11-4overriding

assignments 10-20default values 10-14

PAR keyword 10-12PARHIER option 10-23passing 3-53, 10-18–10-26

example 20-12problems 10-26Release 95.1 and earlier 10-25

repeated 4-34scattering (S) 9-8scope 10-18–??, 10-19, ??–10-26

See also model parameters,optimization parameters

SIM2 4-15simple 10-11simulator access 3-64skew, assigning 3-65subcircuits 10-13time sweep 7-4UIC 6-7user-defined 10-13UTRA 6-31See also model parameters

parasiticscapacitance

parameters, BJT’s 14-25RC wire model 12-10

diode, MOSFET Level 39 17-202element parameters 12-3generation 16-40MOSFET Level 13 17-128resistance 12-3

parameters, BJT’s 14-23temperature equations

BJT’s 14-60JFET’s and MESFET’s 15-

49PARHIER option 3-53, 10-23PARMIN optimization parameter 11-8parts directory 3-60PASSFAIL keyword 28-7path names 3-53

subcircuits 3-31path numbers, printing 3-53PATHNUM option 3-53

P Index


p-channelJFET models 3-65MOSFET models 3-65

PCIdemo files 20-36Speedway 20-34timing data extraction macro 20-44

PD model parameter 23-87peak-to-peak value, measuring 4-23period (digital vector file) 5-66peripheral component interconnect

see PCIpermit.hsp file, encryption capability

29-7phase

AC voltage 9-10calculating 9-9

phase detector model 23-105, 23-114phase locked loop, BJT model 23-109PHOTO model parameter 10-46piecewise linear sources

data driven 5-15delay time 5-13output values 5-13parameters 5-13repeat parameter 5-13segment time values 5-13simulation time 7-28start point 5-13see PWL

pin capacitance, plotting 20-6pivot

algorithm, selecting 6-18matrix calculations 6-18

reference 6-20selection 7-17

pivot change message 6-19PIVOT option 6-18, 7-17PIVREF option 6-20PIVREL option 6-20PIVTOL option 6-19, 6-20planar conductor parameters 22-23PLEV model parameter 22-7, 22-15, 22-

17, 22-38PLL

see phase locked loopplot

limits 4-52models 3-65value calculation method 9-7

PLOT keyword 4-56.PLOT statement

in .ALTER block 3-34pn junction conductance 6-40pnp BJT models 3-66POI keyword 7-6, 8-5, 9-5POLE

element parameter 27-10function 25-1, 27-2, 27-7, 27-25–27-

30transconductance element state-

ment 27-7voltage gain element statement

27-7pole/zero

analysis 27-2absolute tolerance 25-4

Index P


capacitance scale 25-4conductance scale 25-4frequency scale 25-4imaginary to real ratio 25-5inductance scale 25-4iteration limit 25-4maximum frequency 25-4operating point 25-3.PZ statement 25-3real to imaginary ratio 25-5relative error tolerance 25-4

conjugate pairs 27-8control options

CSCAL 25-4FMAX 25-4FSCAL 25-4GSCAL 25-4ITLPZ 25-4LSCAL 25-4PZABS 25-4PZTOL 25-4RITOL 25-5

pole/zero analysisabsolute tolerances 8-12frequency, maximum 8-11maximum number of iterations 8-11real/imaginary component ratio 8-12starting points for Muller algorithm

8-12poles and zeros, complex 27-27POLY 5-20

element parameter 23-14, 23-22, 23-28, 23-32, 23-37

polynomialcapacitor coefficients 12-21

functions 5-20, 23-14FV function value 23-14

inductor coefficients 12-28polysilicon 16-25POST option 3-4, 3-53pow(x,y) function 10-6power

dissipation 4-15–4-19subcircuits 4-15

function 10-6operating point table 6-8stored 4-15

POWER keyword 4-16PP keyword 4-23, 4-24PPWL

element parameter 23-22function 5-27, 23-20PMOS transistor function 23-17

precisionconstants 10-4numbers 10-4parameters 10-4sweep variables 10-4

print control options 4-49.PRINT statement, in .ALTER 3-34printed circuit boards

analyzing 20-55models 20-2

printer, device specification 4-54printout

columns, number 3-48disabling 3-48suppressing 3-67suppressing page ejects 3-52

Q Index


value calculation method 9-7PROBE option 3-54.PROTECT statement 29-2protecting data 3-67PRTDEFAULT printer 4-54PSF option 3-54PSRR specification 23-5PULSE source function 5-6

delay time 5-7initial value 5-7onset ramp duration 5-7plateau value 5-7recovery ramp duration 5-7repetition period 5-7width 5-7

PWLcurrent controlled gates 23-13, 23-14element parameter 23-22, 23-28, 23-

32, 23-37functions 23-14, 23-17gates 23-13NMOS and PMOS transistor

functions 23-17sources 5-13

data driven 5-15voltage controlled

capacitors 23-13gates 23-13

sourcesSee also piecewise linear sourc-

es, data driven PWLsource

PWR model parameter 23-87pwr(x,y) function 10-6

Pxxx 17-190.PZ statement 8-8, 25-3, 27-2PZABS option 8-12, 25-4PZTOL option 8-12, 25-4

Q

quality assurance 10-2quasi-saturation BJT model 14-47Qxxx BJT element statement 14-4

R

RA model parameter 22-28RA1 model parameter 22-30RAC model parameter 23-87radix (digital vector file) 5-63random limit parameter distribution 10-

39RB model parameter 22-28RC wire model 12-9RD model parameter 22-28real part of AC voltage 9-10real vs. imaginary component ratio 8-12RECT FFT analysis keyword 26-7rectangular FFT window 26-3reference plane, transmission lines 22-5reference temperature 3-43, 10-61regions charge equations, MOSFET

Level 13 17-120related documents iiiRELH option 6-27, 7-13, 9-7RELI option 6-22, 6-27, 7-13

KCLTEST setting 6-17

Index S


RELIN optimization parameter 11-9RELMOS option 6-22, 6-24, 6-27, 7-19

KCLTEST setting 6-17RELOUT optimization parameter 11-9RELQ option 7-13, 7-26RELTOL option 7-11, 7-13RELV option 6-22, 6-27, 7-12

multiplier for 7-12RELVAR option 7-13, 7-19RELVDC option 6-27repeat function 11residual sum of squares 11-19resistance

AC 9-3effective 12-7minimum 6-20model parameters 12-5

resistorscurrent flow 4-12elements 12-6

names 12-7parameters 12-3

equation 12-7length parameter 12-6models 3-66node names 12-7node to bulk capacitance 12-6noise equation 12-8parameter 12-7temperature

coefficients 12-7equations 12-9

width parameter 12-7wire model parameters 12-12

See also wire modelsRESMIN option 6-20RESULTS keyword 8-4RHO model parameter 22-19, 22-26, 22-

28, 22-30RHOB model parameter 22-19, 22-26,

22-28, 22-31RIN keyword 9-19ripple calculation 20-3rise and fall times 4-20RISE keyword 4-22rise time 22-109

simulation example 20-10RITOL option 8-12, 25-5RLOAD model parameter 5-50, 23-43RMAX option 7-16, 7-27RMIN option 7-16, 7-27RMS keyword 4-24rms value, measuring 4-23roac model parameter 23-87ROUT keyword 9-19ROUT model parameter 23-88row/matrix ratio 6-20RSH model parameter 10-34runtime statistics 3-47Rxxx resistor element statement 12-6

S

S19NAME model parameter 5-50, 23-41, 23-43

S19RHI model parameter 23-41S19RLO model parameter 23-41

S Index


S19TSW model parameter 23-41S19VHI model parameter 5-50, 23-43S19VLO model parameter 5-50, 23-43S1NAME model parameter 5-50, 23-41,

23-43S1RHI model parameter 23-41S1RLO model parameter 23-41S1TSW model parameter 23-41S1VHI model parameter 5-50, 23-43S1VLO model parameter 5-50, 23-43S2NAME model parameter 5-50, 23-41,

23-43S2RHI model parameters 23-41S2RLO model parameter 23-41S2TSW model parameter 23-41S2VHI model parameter 5-50, 23-43S2VLO model parameter 5-50, 23-43.SAMPLE statement 9-18sampling noise 9-18saturable cores

dot convention 12-30elements 12-30

names 12-30initial magnetization 12-30models 12-29

parameters 12-5winding names 12-30

saturationcurrent, temperature equations,

JFET and MESFET 15-46temperature equations, BJT’s 14-53voltage equations, MOSFET’s

Level 1 17-7

Level 13 17-117Level 2 17-15Level 28 17-162Level 3 17-26Level 38 17-178Level 47 17-232Level 5 17-49Level 6 17-67, 17-73Level 8 17-98

SCALEelement parameter 23-22, 23-28, 23-

32, 23-37, 27-10option 15parameter 27-34

scalediode parameters 13-9factor 12-7JFET and MESFET 15-5

parameters 15-9resistors 12-6

SCALE option 12-13, 12-20, 13-3, 16-10, 16-14

scaling 16-11BJT’s 14-5effect on delays 31global SCALM override 16-11global vs model 13-3, 16-11MOSFET capacitance parameters

16-72SCALM

option 12-13, 12-20, 13-3JFET and MESFET scaling 15-5

parameterglobal scaling 16-11in a diode model statement 13-3

Index S


overriding in a model 16-11scaling by model 16-11

scattering (S) parameters 9-8schematics, netlisting 3-29Schichman-Hodges model 16-3Schmitt trigger example 8-7scope of parameters 10-19scratch files 3-8SDA option 3-48, 3-54s-domain 27-17

equivalent circuit 27-22SEARCH option 3-54, 3-58, 3-59, 28search path, setting 3-59self inductance 22-106.SENS statement 8-8sensitivity analysis 8-9sensitivity factors, MOSFET Level 28

17-158setup time 28-4

analysis 28-6, 28-9SFFM source function 5-17

carrier frequency 5-17modulation index 5-17output amplitude 5-17output offset 5-17signal frequency 5-17

sgn(x) function 10-7SGS-Thomson MOS model 16-5Sharp model 16-5short-channel effect 17-14shorted nodes 6-33SHRINK model parameter 12-13, 12-20

SHTHK model parameter 22-28, 22-31Siemens model 16-4, 16-5Sierra 1 model 16-4Sierra 2 model 16-4SIG

conductivity 22-119model parameter 22-19, 22-26, 22-

28, 22-30SIG1 model parameter 22-26sigma model parameter, sweeping 20-4sign function 10-7sign transfer function 10-7sign(x,y) function 10-7SIGNAME element parameter 5-49, 23-

40, 23-42signed power function 10-6Signetics FAST I/O drivers 20-18silicon controlled rectifier, behavioral

23-76Siliconix model 16-4silicon-on-sapphire devices 16-2silicon-on-sapphire devices, bulk node

name 3-33SIM2

distortion measure 9-14parameter 4-15

Simpson Integration 16-90simulation

accuracy 7-10, 7-11, 7-18, 11-2, 17-5

improvement 7-9reduced by BYPASS 7-8tolerances 6-21, 6-22

S Index


accuracy, option defaults 7-27multiple analyses, .ALTER

statement 3-34, 10-30multiple runs 3-24results

graphing 4-54output variables 3-54plotting 4-52–4-53printing 4-47–4-51specifying 4-19–4-34storing 3-53

speed 3-52, 7-18time 17-5

ABSVAR option 7-27reducing 3-37, 7-8, 7-9, 7-12, 7-

13, 7-14, 7-16, 7-28with TRTOL 7-14

RELVAR option 7-27time, reducing 27-45title 3-23

SIN source function 5-9amplitude 5-9damping factor 5-9delay time 5-9frequency 5-9offset 5-9phase delay 5-9

sin(x) function 10-6single point experiment 3-3single-frequency FM source function 5-

17sinh(x) function 10-6sinusoidal source function 5-9skew

file 10-37

parameters 10-33assigning 3-65

skin effect frequency 22-21slope (digital vector file) 5-69SLOPETOL option 7-13

simulation time 7-28timestep control 7-27

small-signalDC sensitivity 8-9distortion analysis 9-14transfer function 8-9

SMOOTH element parameter 23-22SOI model 17-146SONAME model parameter 5-50, 23-

41, 23-43SORHI model parameter 23-41SORLO model parameter 23-41SOSFET model 16-2, 16-5SOTSW model parameter 23-41sources

AC sweep 9-4controlled 23-4, 23-13data driven 5-15DC sweep 8-3element types 23-13keywords 5-2Laplace transforms 27-18time sweep 7-4See also independent sources

SOVHI model parameter 5-50, 23-43SOVLO model parameter 5-50, 23-43SP model parameter 22-17, 22-26SP12 model parameter 22-26

Index S


SPARSE option 6-20spatial extent of leading edge 22-112spectral leakage 26-2, 26-14spectrum analysis 26-1SPICE

compatibility 3-54, 15-26BSIM model 17-125diodes 16-40models 17-265MOSFET’s

Level 13 parameters 17-125Level 3 17-30Level 39 17-186, 17-195models 16-3

numeric format 3-49output format 4-49plot

limits 4-52UTRA model parameter 17-12

model parameters, MOSFET Level39 17-186

option 3-54SPICE compatibility

ACoutput calculations 9-7output variables 9-9–9-10

SPICE to IBIS program 24-2sqrt(x) function 10-6square root function 10-6SRN model parameter 23-88SRNEG model parameter 23-88SRP model parameter 23-88SRPOS model parameter 23-88.st# file 4-3, 4-5

stacked devices 16-45START .FFT parameter 26-6START keyword 7-5statements

.AC 9-4, 11-5

.ALTER 3-34

.DATA 3-37, 20-9, 20-10

.DC 8-3, 11-5

.DCVOLT 6-7

.DISTO 9-14

.END 3-24

.ENDL 3-61, 3-62

.ENDS 23-10

.EOM 23-10

.FFT 7-33, 26-6

.FOUR 7-30

.GLOBAL 3-25

.GRAPH 4-54

.IC 6-7

.INCLUDE 3-60

.LIB 3-61call 3-61nesting 3-63

.LOAD 6-13

.MACRO 23-9

.MEASURE 3-50, 3-51, 4-19

.MODEL 3-65, 4-56, 11-7

.NET 9-19

.NODESET 6-7, 6-15

.NOISE 9-16

.OP 6-8

.OPTIONS 3-45

.PARAM 10-12, 11-6

.PLOT 4-52

.PRINT 4-47

S Index


.PROBE 4-54

.PROTECT 3-67

.PZ 8-10

.SAMPLE 9-18

.SAVE 6-11

.SENS 8-9

.SUBCKT 23-9, 23-82

.TEMP 3-43, 10-62

.TF 8-10

.TITLE 3-24

.TRAN 7-4, 11-5

.UNPROTECT 3-67

.WIDTH 4-51elements 3-25initial conditions 6-6

statistical analysis 10-33–10-59statistics

calculations 10-3listing 4-6report 3-47

Statz model 15-2, 15-3, 15-26capacitance equations 15-32

STC-ITT model 16-4stimulus input files 20-18, 23-4STOP .FFT parameter 26-6stripline transmission line 22-23subcircuits 10-26

.PRINT and .PLOT statements 23-8calling 23-10, 23-11calling tree 3-32changing in .ALTER blocks 10-30element names 23-11generator 23-5global versus local nodes 3-25library structure 3-58

model names 23-11multiply parameter 23-11multiplying 23-7names 23-9node names 3-30, 23-6, 23-11node numbers 23-9parameter example 20-12parameter passing 23-10, 23-11parameters 23-9path names 3-31power dissipation computation 4-15printing path numbers 3-53search order 23-12zero prefix 3-33

.SUBCKT statement 23-9search order 23-82

SUBS model parameter 14-2substrate

capacitance equations, BJT’s 14-43current equations, BJT’s 14-36diodes 14-32

subthreshold current equations,MOSFET’s

Level 13 17-117Level 2 17-18Level 3 17-29Level 38 17-180Level 5 17-50Level 6 17-76Level 8 17-102

.sw# file 4-2, 4-4sweep

data 3-41data, storing 3-51frequency 9-6

Index T


inner 3-41outer 3-41variables 26

SWEEP keyword 7-6, 8-5, 9-5switch example 5-30switched capacitor 27-45

filter example 27-47switch-level MOSFET example 5-30Synopsys models, calibrating 20-1systems, simulating 20-2

T

T elements 22-2lossless transmission line model 22-

118multiplier function M 22-5parameters 22-10statement 22-10transient effects modeling 22-104

Taguchi analysis 10-2tan(x) function 10-6tanh(x) function 10-6TARG keyword 4-21target specification 4-20Taylor-Huang model 16-4TC1, TC2 element parameters 23-23,

23-28, 23-32, 23-37, 27-10TD

element parameter 22-11, 23-23, 23-28, 23-33, 23-37

keyword 4-14, 4-25tdelay (digital vector file) 5-68TDR (time domain reflectometry) 20-9

TEMPkeyword 8-5, 9-5model parameter 3-43, 10-61, 23-88sweep variable 26

.TEMP statement 3-43–3-44, 10-61, 10-62–10-63

temper variable 10-8temperature

AC sweep 9-4BJT’s

beta equations 14-53–14-57capacitance equations 14-57energy gap equations 14-53Level 2 equations 14-60parasitic resistor equations 14-60saturation equations 14-53–14-

57capacitor equations 12-9circuit 10-62

default 10-61coefficients 12-7, 12-16, 12-23

G and E elements 27-10compensation

equations, MOSFET Level 4717-237

parameters, MOSFET Level 1317-129

DC sweep 8-3, 8-6derating 3-43, 10-61diodes 13-22effects

MOSFET Level 39 17-200parameters, BJT’s 14-27

element 10-61, 10-62parameters 12-3

T Index


relative to circuit 12-6equations

BJT Level 2 14-60BJT’s 14-53MOSFET 16-110resistors 12-9

JFETequations 15-45–15-49TLEV parameter 15-42TLEVC parameter 15-42

MESFET equations 15-45–15-49model parameters 12-5optimizing coefficients 26parameters

JFET 15-42JFET and MESFET 15-43MOSFET’s 16-107


reference 3-43, 10-61sweeping 26time sweep 7-4variable 10-8

.TF statement 8-8, 23-63tfall (digital vector file) 5-70TH model parameter 22-17, 22-26TH1 model parameter 22-26THB model parameter 22-17, 22-26THD (total harmonic distortion) 26-1The 3-67thermal noise 12-8THK1 model parameter 22-26THK2 model parameter 22-26

threshold temperature equations, JFETand MESFET 15-48

threshold voltageequations, MOSFET’s

Level 1 17-6Level 13 17-116Level 2 17-14Level 28 17-160Level 3 17-26Level 38 17-176Level 47 17-230Level 5 17-46Level 6 17-63Level 8 17-98

parameters, MOSFET’sLevel 1 17-4Level 2 17-10Level 3 17-22Level 38 17-170Level 5 17-36Level 8 17-93Levels 6, 7 17-57

TI model 16-5TIC model parameter 4-56time 6-9

domainto frequency domain 27-1

maximum 27-6resolution 27-5sweep 7-4variable 10-8versus impedance 20-9See also CPU time

time domainalgorithm 7-22

Index T


time-domain reflectometry 20-9TimeMill models, calibrating 20-1TIMERES option 7-14TIMESCALE model parameter 5-50timestep

algorithms 7-9, 7-25calculation for DVDT=3 7-15changing size 7-13control 7-13, 7-14, 7-15

algorithms 7-24–7-27DELMAX 7-27error 22-64FS 7-27FT 7-27minimum internal timestep 7-27Minimum Timestep Coefficient

7-27options 7-19, 7-27

CHGTOL 7-26IMAX 7-25IMIN 7-25RELQ 7-26TRTOL 7-26

RMAX 7-27RMIN 7-27TSTEP 7-28

default control algorithm 7-21DVDT algorithm 7-26internal 7-15local truncation error algorithm 7-26maximum 7-16minimum 7-16reversal 7-26

definition 7-11setting initial 7-15

transient analysis algorithm 7-9variation by HSPICE 7-15

TIMESTEP model parameter 5-50, 23-41, 23-43

timinganalysis 28-1constraints 28-1failures 28-2hold time 28-4setup time 28-4violation analysis 28-2

title for simulation 3-23tmp directory 3-8TMPDIR environment variable 3-8TNOM option 3-43, 10-61TO

keyword 4-24, 4-32TO .FFT parameter 26-6TOL 9-18tolerance options 6-14TOM model 15-2, 15-50

Level 3 parameters 15-50parameters 15-52See also TriQuint model

TOP keyword 6-12topology check, suppressing 3-52TOX model parameter 10-34.tr# file 4-2, 4-4.TRAN statement, external data 7-38transcapacitance 16-61transconductance

FREQ function 27-8JFET and MESFET 15-10

T Index


LAPLACE function 27-6MOSFET 16-18POLE function 27-7

transfer function 8-9algebraic 23-3analysis 23-63coefficients 27-27filters 27-28frequency domain 25-2, 27-17general form 27-17, 27-26inverse Laplace transform 27-30poles 25-2reduced form 27-27roots 25-2voltage gain 27-21zeros 25-2

transfer sign function 10-7TRANSFORMER element parameter

23-33transformer, behavioral 23-74transforms, Fourier 27-5transient analysis

Fourier analysis 7-30initial conditions 6-6number of iterations 7-16

transient modeling 27-2transistors

lateral 14-33geometry 14-33, 14-49

process parameters, MOSFET’sLevel 13 17-105Level 28 17-151Level 49 17-241, 17-249, 17-

250, 17-251substrate diodes 14-32

geometry 14-33vertical 14-33

geometry 14-33, 14-48transit time parameters, BJT’s 14-25transition files 23-4transmission lines

AC resistance 22-22analysis guidelines 22-112attenuation 22-118

calculations 22-115effects 22-124factor 22-39

bandwidth 22-109branch capacitances 22-35, 22-36capacitance

definitions 22-34matrix 22-54to ground 22-21

CEXT parameter 22-34characteristic impedance 22-11, 22-

99, 22-103Cjk symbol 22-34clock frequency 22-109coax

example 22-59models 22-27

common ground inductance 22-104conductance definitions 22-34conductor

length 22-34width 22-34

conductor resistance 22-123coupled

lines 22-12microstrips example 22-62

Index T


stripline example 22-57crosstalk 22-104, 22-108CX symbol 22-34CXY symbol 22-34delay parameter 22-11delay too small warning 22-5delays 22-38dielectric loss 22-120dispersion 22-118dissipation 22-121

factor 22-119dual dielectric 22-23effects 20-7elements 22-2

names 22-11selection 22-4

example 20geometric parameters 22-19Gjk symbol 22-34GPR parameter 22-34ground plane 22-5GX symbol 22-34GXY symbol 22-34HSPICE

ground 22-20reference plane 22-5

ideal, properties 22-6impedance 22-101

lumped elements 22-101mismatch 22-69

inductance 22-104matrix 22-54

initial conditions 22-11input attenuation 22-39integration

algorithms 22-45

method 22-64interconnect properties 22-3LLEV parameter 22-34loss

calculations 22-115factor 22-39

lossless model 22-99lossy model 22-15, 22-100, 22-121

properties 22-6selector 22-15statement 22-15

lumpedparameters 22-22RC model 22-6RLC model 22-100

matrixes 22-35, 22-36, 22-54–22-56measured parameters 22-37microstrip 22-23models 22-2

selection 22-4multiple

conductors 22-34stripline, example 22-41

mutual inductance 22-105normalized length 22-11number of lumps 22-48, 22-64

computation 22-65default 22-65specification 22-65

oscillation problems 22-63overlay dielectric 22-23parameter error 22-20parameters, combining 22-39physical

length parameter 22-11parameters 22-18

T Index


planar 22-16conductors 22-23models 22-17

precomputed parameters 22-32keywords 22-33

printed circuit boards 20-55example 22-58

properties 22-1reflection calculations 22-114ringing 22-22, 22-63–22-68risetime 22-109sea of dielectric 22-23

example 22-46self inductance 22-106SIG conductivity parameter 22-119signal reflections 22-69simulation 20-2skin depth 22-119

calculation 22-115skin effect frequency 22-21source properties 22-3stripline 22-23switching noise 22-104theory 22-99timestep control errors 22-64total conductor resistance 22-53transient impedance effects 22-104twinlead

example 22-61models 22-29

U element 22-100See also T elements, U elements, U

modelsTRAP algorithm 7-9

See also trapezoidal integration

trapezoidal integrationalgorithm 7-21coefficient 7-12, 7-14

TREF model parameter 10-61, 10-62TRIG keyword 4-21trigger specification 4-20triode tube example 5-32triode tube, behavioral 23-77TriQuint model 15-2

extensions 15-50Level 3 parameters 15-50See also TOM model

trise (digital vector file) 5-70triz (digital vector file) 5-71TRTOL option 7-14, 7-26truncation algorithm 7-25TS model parameter 22-17, 22-26TS1 model parameter 22-30TS2 model parameter 22-31TS3 model parameter 22-31tskip (digital vector file) 5-66TSTEP

multiplier 7-16setting 7-16

option 7-16timestep control 7-28

TTL devices 14-2tunit (digital vector file) 5-65tunnel diode, behavioral 23-75twinlead

see transmission linesTxxx element parameter 22-11

Index U


U

U elements 5-46, 22-2, 23-39attenuation effects 22-124digital element 23-40, 23-42element name 22-14input node names 22-14lossy transmission line model 22-

100, 22-118model name 22-14multiplier function M 22-5number of lumps 22-14output node names 22-14parameters 22-14physical length parameter 22-14reference plane name 22-14statement 22-14transient effects modeling 22-104transmission line model 22-107

U modelsconductor

height 22-17resistivity 22-19spacing 22-17thickness 22-17width 22-17

dielectricconductivity 22-19configurations 22-16constant 22-17

electrical specification format 22-15ELEV parameter 22-7external capacitance 22-17model selector 22-15, 22-17number of conductors 22-17number of layers 22-19

number of lumps 22-17parameters 22-15, 22-17–22-40perturbation

multiplier 22-17parameter 22-17

PLEV parameter 22-7reference plane

configuration 22-15height 22-17resistivity 22-19separation distance 22-17thickness 22-17

selection 22-7transmission line type selector 22-15.MODEL statement 22-15

UICkeyword 7-6parameter 6-7transient analysis parameter 7-3

UIC analysis parameter 6-5UNIF


uniform parameter distribution 10-39unity gain frequency 28UNORM FFT analysis keyword 26-6unprintable characters in input 3-18.UNPROTECT statement 29-2UNWRAP option 9-8UPDATE parameter

MOSFET Level 13 17-130MOSFET Levels 6, 7 17-59

URL for Avant! viUTRA model parameter restriction 6-31

V Index


Uxxx element parameter 22-14

V

variablesAC formats 9-11changing in .ALTER blocks 10-30DEFAULT_INCLUDE 3-16output 4-5

AC analysis 9-8names 4-6

plotting 15sweeping 26TMPDIR 3-8

variance, statistical 10-3VCC model parameter 23-88VCCAP element parameter 23-23VCCS element parameter 23-23VCO

example 23-34model 23-112See also voltage controlled oscillator

VCR element parameter 23-23VCVS

element parameter 23-33inverting comparator application 23-

96VEE model parameter 23-88VERIFY option 3-55Verilog models, calibrating 20-1Verilog value format 5-61version

95.3 compatibility 7-27H9007 compatibility 3-49HSPICE 3-66

specifying 3-12VFLOOR option 7-17VHDL

models, calibrating 20-1Viewlogic 5-46

graph data file 3-49Viewsim simulator 5-46, 23-39vih (digital vector file) 5-72vil (digital vector file) 5-72vname (digital vector file) 5-63Vnn node name in CSOS 3-33VNTOL option 7-11, 7-12, 7-14voh (digital vector file) 5-74vol (digital vector file) 5-74VOL keyword 5-41, 23-34voltage

error toleranceDC analysis 6-27transient analysis 7-13

failure 6-35gain

FREQ function 27-8LAPLACE function 27-6POLE function 27-7

initial conditions 6-6iteration-to-iteration change 6-16JFET and MESFET DC models 15-

35limiting, in transient analysis 7-15maximum change 7-11minimum

DC analysis 6-24listing 7-17transient analysis 7-14

Index W


MOSFET model parameters 16-52operating point table 6-9relative change, setting 7-13summer 5-40, 23-33tolerance

BYTOL option 7-11MBYPASS multiplier 7-12

value for BYPASS 7-11variable capacitance model 23-102

voltage controlledcapacitor 23-20

current 23-21capacitor example 5-31current source 5-25, 5-33, 23-13, 23-

18oscillator 5-41, 23-34

See also VCOoscillator model 23-98resistor 23-13, 23-19sources 5-20voltage source 5-37, 23-13, 23-30

VOLTAGE keyword 6-9VON model parameter 23-88VONEG model parameter 23-88VOP model parameter 23-89VOPOS model parameter 23-89VOS model parameter 23-89Vos specification 23-5vref (digital vector file) 5-72VREL model parameter 22-38vth (digital vector file) 5-73VTI model 16-5VVCAP model 23-102Vxxx source element statement 5-2

W

warningsall nodes connected together 6-33capacitance too large 12-19floating power supply nodes 3-31inductance too large 12-25invalid value for CRATIO 12-10IS parameter too small 13-17limiting repititions 3-55MAXF ignored 27-10misuse of VERSION parameter 3-66resistance smaller than RESMIN 12-

14suppressing 3-52T-line delay too small 22-5zero diagonal value detected 6-35

WARNLIMIT option 3-55WD model parameter 22-17, 22-26WD1 model parameter 22-26WDAC parameter 16-103WEIGHT keyword 4-25, 4-32WHEN keyword 4-25, 28WIC weak inversion current selector 17-

76width of printout 4-51winding elements 12-3WINDOW .FFT parameter 26-7wire models

capacitancecalculation 12-14distribution 12-10

effective length and width 12-13model parameters 12-5parameters 12-9, 12-12

X Index


resistance calculation 12-13wires 22-2

critical length 20-7model selection 22-72types 20-7See also transmission lines

WLUMP model parameter 22-17WMAX model parameter 5WMIN model parameter 5worst case analysis 10-33–10-59

example 20-10Wscaled scaled width 12-7WSF output data 3-48WWW site for Avant! vi

X

XGRID model parameter 4-56XL model parameter 10-34XMAX model parameter 4-56XMIN model parameter 4-56XnR, XnI option 8-12XPHOTO model parameter 10-47XSCAL model parameter 4-56XW model parameter 10-34, 22-17, 22-

26

Y

Y-parameter modeling 27-36YGRID model parameter 4-56yield analysis 10-2YIN keyword 9-13, 9-20YMAX

keyword 4-32model parameter 4-57

YMINkeyword 4-31model parameter 4-57

YOUT keyword 9-13, 9-20YSCAL model parameter 4-57

Z

Z0 element parameter 22-11Zener diodes 13-3zero delay

gate example 5-31inverter gate 5-41

ZIN keyword 9-13, 9-20ZK model parameter 22-38ZOUT keyword 9-13, 9-20ZUKEN option 3-55

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Symbols A - UWECE · ALPHA model parameter 12-34.ALTER blocks statements in 3-34.LIB and .DEL LIB...

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