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Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage...

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Laser-Laboratorium Göttingen e.V. Hans-Adolf-Krebs Weg 1 D-37077 Göttingen Table-top EUV/XUV source Generating 2-20 nm wavelength radiation
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Page 1: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Laser-Laboratorium Göttingen e.V.

Hans-Adolf-Krebs Weg 1

D-37077 Göttingen

Table-top EUV/XUV source

Generating 2-20 nm wavelength radiation

Page 2: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Spectrum of

electromagnetic radiation

Wavelength

Photon energy

EUV-Lithography13.5 nm

~ 92 eV

Page 3: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Principle of

laser-produced plasma

EUV XUV

o High-energy laser focused on

gaseous target

o Emission spectra depending on

target gas

Page 4: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Laser-produced plasma

Page 5: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Focusing of laser plasma:

▲ Focusing of soft X-rays by ellipsoidal mirror

▼ Intensity profiles captured

by phosphor coated CCD

Page 6: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Laser-Laboratorium Göttingen e.V.

Hans-Adolf-Krebs Weg 1

D-37077 Göttingen

X-ray microscopy

Table-top microscope

operating at = 2.88 nm

Page 7: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Monochromatic radiation @ = 2.88 nm

Table-top x-ray microscope

Spectrum of

N2 plasma + Ti-Filter:

@ = 2.88 nm

Page 8: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Table-top x-ray microscope

1 m

= 2.88 nm

Page 9: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Micrographs @ = 2.88 nm

o Compact, stable soft x-ray microscope

o Spatial resolution ≈ 50 nm (up to now)

o Next step: biological samples

Bacteriumradiodurans

M. Müller, K. Mann, Optics Express 2014

Pinnularia spec 300x

5 µm

Colloids 520x

Page 10: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Micrographs @ = 2.88 nm

Bacteriumradiodurans

Fresnelzone-plate

Micro-organisms

Page 11: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Laser-Laboratorium Göttingen e.V.

Hans-Adolf-Krebs Weg 1

D-37077 Göttingen

NEXAFS spectroscopy

Near-edge x-ray absorption

fine-structure spectroscopy

Page 12: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

NEXAFS - Principle

Fine-structure at absorptionedge

o molecular orbitals

o oxidation states

o coordination of an absorbing element

◄ Absorption-edges in the XUV wavelength

range (selected elements)

Page 13: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

NEXAFS - Setup

o Table-top system

o „Single-shot“

o Pump-probe exp.

XUV plasma (Kr)with pinhole camera

Page 14: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

NEXAFS - Measurement

◄ Emission spectra of Krypton with and

without sample

► NEXAFS spectrum of Polyimide

Page 15: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Setup of NEXAFS Spectrometer

◄ XUV – NEXAFS (2-5 nm)

► EUV – NEXAFS (7-16 nm)

Page 16: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

NEXAFS – Results II

E. Novakova, C. Peth, K. Mann, T. Salditt et al.: Biointerphases, 3 (2008) FB44

PCMO (Perovskite-type manganate)

300 400 500 600 700 800 900 10001.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

Optical T

hic

kness [a.u

.]

Photon-Energy (eV)

CaL 2,3

NK

OK

MnL 2,3PrM 4,5

: Pr, Ca

: O

: Mn

o Every element visible

(single shots)

o Pump-probe experiments

Pr1-xCaxMnO3

Page 17: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

NEXAFS spectra

P. Großmann, K. Mann et al., Rev. Sci. Instr. 83 (2012)

Pump-probe

Optically induced phase transition

: Pr, Ca

: O

: Mn

Pr1-xCaxMnO3: Ca L-edge:

F.-C. Kühl, Bachelorarbeit (2013)

Page 18: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

EXAFS: Cl L-edge of NaCl

► 200nm NaCl film► L-edge of Cl (EUV

range)► Bond lengths:

Excellent agreementwith Synchrotron data

EXAFS structures

Streui

iEE

CR

Page 19: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

MnCl2 and Fe2O3

Page 20: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Brilliance improvement by density

enhancement

10-3 mbar

1 bar

Nitrogen

10bar

ambient

pressure:

500µm

Nozzle

o local density

enhancement by the

„barrel shock“

o improved conversion

efficency

o variable distance to

nozzle minimizes

degradation effects

Page 21: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

The barrel shock

Nitrogen

Helium

𝑩 = 𝟑. 𝟐 ⋅ 𝟏𝟎𝟏𝟓 𝐏𝐡𝐨𝐭𝐨𝐧𝐬

𝐦𝐦𝟐⋅𝐦𝐫𝐚𝐝𝟐⋅𝐬→ 𝑩 = 𝟑. 𝟐 ⋅ 𝟏𝟎𝟏𝟔 𝐏𝐡𝐨𝐭𝐨𝐧𝐬

𝐦𝐦𝟐⋅𝐦𝐫𝐚𝐝𝟐⋅𝐬

Brilliance improvement: 10x

Page 22: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Laser-Laboratorium Göttingen e.V.

Hans-Adolf-Krebs Weg 1

D-37077 Göttingen

EUV damage

Material interaction studies with

13.5 nm radiation

Page 23: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

EUV Schwarzschild Objective

Schwarzschild Objectiveo Magnification 10:1

o High numerical apterture (0.4)

o Generation of high energy densities

Primary

mirror

Secondary

mirror

EUV source

Focus

Page 24: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

EUV Damage: Optics

TEM-Micrograph of

Mo/Si mirror

► Damage of Mo/Si

multilayer EUV mirrors

▲ Damage of thin gold films (grazing-incidence EUV mirrors)

Page 25: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

EUV Damage: Substrates

▲ Damage of fused silica

► Damage of Silicon

wafers at different

EUV energy

densities

▲ Damage of calcium

fluoride

Page 26: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild
Page 27: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Laser-Laboratorium Göttingen e.V.

Hans-Adolf-Krebs Weg 1

D-37077 Göttingen

EUV reflectometry

Reflectometry @ 13.0 nmwavelength

Page 28: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

EUV reflectometry: Setup

Reflectivity @ 12.98 nm

o Oxygen emission line

o Angular resolution 0.3°

o Angular range 1°- 85°

EUV spoton sample

Page 29: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

EUV reflectometry: examples

29

0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 8510

-4

10-3

10-2

10-1

100

Ref

lect

ivit

y

Sample angle

► Mo/Si multilayermirrors

▼ Carbon layer, thickness 75nm

Page 30: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Laser-Laboratorium Göttingen e.V.

Hans-Adolf-Krebs Weg 1

D-37077 Göttingen

EUV Beam characterization

Wavefront sensor and coherencemeasurements

Page 31: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Wavefront sensor

Hartmann plate

EUV/XUV

Beam

Page 32: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Test of EUV wavefront sensor at

Free-electron laser (FLASH)

Page 33: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

EUV wavefront sensor:

Beam adjustment at FLASH

B. Flöter, K. Mann, K. Tiedtke et al. NIM A 635, S108–S112 (2011)

Spot distribution

Adjustment of beam line optics

Page 34: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Caustic measurement at FLASH

Intensity distribution Beam diameter

CCD camera

Phosphor coated screen

Translation stage

Long working distance

microscope

Page 35: Table-top EUV/XUV source - llg-ev.de · Hans-Adolf-Krebs Weg 1 D-37077 Göttingen EUV damage Material interaction studies with 13.5 nm radiation. EUV Schwarzschild Objective Schwarzschild

Coherence calculation by

the Wigner distribution function

𝐾 = ℎ 𝑥, 𝑢 ²𝑑𝑥²𝑑𝑢²

ℎ 𝑥, 𝑢 𝑑𝑥²𝑑𝑢²= 1.6%

ℎ𝑥 𝑥, 𝑢 = ℎ 𝑥, 𝑦, 𝑢, 𝑣 𝑑𝑦𝑑𝑣 ℎ𝑦 𝑦, 𝑣 = ℎ 𝑥, 𝑦, 𝑢, 𝑣 𝑑𝑥𝑑𝑢

mapping

measured data

into 4D Wigner

Fourier space

(here: 2D

representation)

ℎ 𝑤𝑥, 𝑧 ⋅ 𝑤𝑥

FFT

reconstruction of intensity

profiles from Wigner

distribution

Global

degree

of coherence

▼ Wigner distribution function


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