The 3D Silicon Leader
Les capacités en Silicium pour les
applications de puissance demandant une
très forte stabilité et fiabilité
Journée Puissance Tours October , 2012
Catherine Bunel , R&D Director
2
Who are we?
• Independent Company located in
Caen, Normandy, France
• Dedicated to manufacturing of leading
edge Integrated Passive Devices
• 20 M$ revenues, 100 people and
operating own Silicon wafer fab
• Strong R&D team and collaborations
with leading research institutes
Quality Certifications
“We aim at exceeding our customers expectations by
reaching the highest level of Quality Standards” Franck Murray, IPDiA C.E.O.
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• ISO-9001
• ISO-14001
• ISO-TS16949 (Automotive)
• ISO-13485 (Medical)
• OHSAS-18001
• RoHS compliant
What do we do?
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High performance, high
stability and high reliability
silicon passive components
to customers in communication,
harsh environment, industrial,
lighting, and medical markets.
PICS-IPD, a Unique Technology
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Passive Integration Connecting Substrate
Up to 100’s of
passive components
can be integrated
IPDIA value proposition:
Technology that enables
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• Miniaturization of application
– Module: High density integration
– High PCB area saving (e.g. > 40%)
– Silicon die with embedded passives as
replacement of external SMD components
– Compatible with standard wire
bonding or reflow assembly according
to scenarios
• Enhanced Performance
– Very high stability vs temperature,
-55°C to +210(*)°C operating range
– High stability vs voltage, time…
– High reliability (no cracking & very low
failure rate<2ppm)
– Efficient decoupling with low ESR/ESL by
full integration on silicon
– Lower battery life time with very low
leakage current
– PCB influence cancelled • Reduced Cost
– BOM level
– Simpler manufacturing with
module
– Simpler application with less
components to place
• Greater Flexibility
– One configurable IPD allowing
a set of output voltages
(*): limited by the active part, up to 250°C is
possible with our passive integration
PICS-IPD, a Unique Technology
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e
SC S0The world
record of
capacitance
density in Silicon
in volume
production
• 250nF/mm² (100µm thin) in production
• 550nF/mm² already tested and demonstrated
Process nodes available
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9
Oustanding performance for High
Temperature applications
For X7R 402 100nF capacitors the cumulated derating @ 200°C is -77%
For 3D Silicon capacitor , it is < 2%
Extreme stability
Outstanding low derating
0,0E+00
1,0E-09
2,0E-09
3,0E-09
4,0E-09
5,0E-09
0 20 40 60 80 100 120
Ip (A
)
Time (s)
Ip 85 Ip 200°C Ip 250°C Ip 275°C Ip 300°C
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I(120s) < 2 nA @ 300°C
DC leakage current at high Temperature
C= 100nF (Amps @ 3V)
I(120s) < 20pA @ 25°C
Performances: High Reliability
Very Low Failure rate
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Used at 85°C and 50% of the Rating
voltage the Failure Rate of a Silicon
Capacitor is Insignificant (Only 2
Units failed on a Million after 10
Years operation time)
This very low Failure Rate
confirms the Excellent Reliability
of 3D Silicon Capacitors ( No
Ageing )2
187
491
0
100
200
300
400
500
600
3D-Si Capacitor X7R Tantalum
Failu
re R
ate
'p
pm
'
Projected Failure Rate in 10 Years
Failure Predictions of Tantalum, Ceramic ‘X7R’ and 3D-Si based Capacitors
Failure rate:
FIT rates calculated at 60% confidence level
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0,001
0,01
0,1
1
10
100
25°C 50°C 75°C 100°C 125°C 150°C 225°C
HEC X8R IPDiA
Standard Product Offering
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Wirebond Silicon Capacitors
• Vertical Silicon Capacitors (WBSC)Broadband and RF communication modules
• Wirebond & Embedded Silicon Capacitors (EMSC)Bypass capacitor applications
High Temperature Silicon Capacitors
• High Temp. Silicon Capacitors 200°C (HTSC)Downhole equipments , avionics
• Xtreme Temp. Silicon Capacitors 250°C (XTSC)Downhole equipments , avionics
• 100% burn-in tested
• Very low derating rate
• Low ESR & ESL
• Thickness down to 100µm
• Efficient decoupling inside
IC module
• For wirebonding and
embedding assembly
• 100% burn-in tested
• Max 1% capacitance
variation
JEDEC Compliant Silicon Capacitors
• High Stability Silicon Capacitors (HSSC)All high-rel applications(Medical and Automotive…)
• Low Profile Silicon Capacitors (LPSC)System in Package, IC modules, ASICS
Low Profile Silicon Capacitor (LPSC)
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Typical 100nF Capacitor Thickness
Volume comparison of 1206 Case size capacitors
6 Times smaller
More than 2 times smaller
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1°) Embedding Applications
-Capacitance up to 4,7µF
-Copper or Aluminum finishing
2°) Molding Applications ( Smart cards, Bank cards, RFID’s )
3°) Customized Applications ( Memories, IC Modules…)
Low Profile Silicon Capacitor (LPSC)
Conductive glue on backside
0303 10nF Vbd>50V
30/04/12
RC Snubber capacitor
Capacitance range 1nF-50nF
Tolerance +/- 5%
Nominal voltage 75V
Insulation Resistance > 100GΩ
Temerature range -50°C + 200°C
T°C linearity 45ppm/°C
Performance Characteristics
Silicon Capacitor
array using
250nF/mm² node
Current Ceramic capacitor array
size: 13mm² and 1mm thickness
size : 0.72mm² and
80 µm thickness
Custom Product Offering
The Cubic Path
=
up to 10
stacked dies
80µm thick
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22µF
Min BV =11V
In a package size of
4.88 x 3.6 x 2.2 mm
Vuse = 4 V
Applications
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All applications with demanding requirements
Extended temperature ranges
Miniaturization / Higher integration
Electrical & Mechanical Reliability
Low energy consumption
Engine
Wheels
&
Brakes
Gearbox
Transmission Exhaust
High-temperature environments
e.g. Down-Hole Drilling , Heavy industrial sensors, Automotive
Conclusion
IPDIA 3D Silicon Capacitor is offering many advantages
over the other types of capacitors :
High capability of integration
High robustness at 80µm thickness
Very high stability with an outstanding behaviour at 250°C
Extremely low failure rate .No burn-in test .
Ultra Low leakage .
Large range of products
Ideal solution where volume and weight are major concerns .
IP Protection
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