m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e r
The Challenge of High-Tech
Fab Gas Purification
Cristian Landoni Global Purification BM
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group2
Outline
�SAES Pure Gas Activities
�Gas Purity and International Technology Roadmap for Semiconductors
�Why Gas Purification Is required?
�Focus on Lithography applications
�Conclusions
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group3
� Part of SAES Group (Italy)
� Founded in 1989
� Gas Purifier Design/
Manufacturing/R&D
� UNI EN ISO 9001-2008
� 100 employees
� 15 sales and service offices
worldwide
SAES Pure Gas Inc.
San Luis Obispo, CA
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group4
SPG Activities
Point of Use Large
Customer Service
SEMICONDUCTOR
COMPOUND
SEMICONDUCTOR
LCD
SOLAR PANELS
FIBER OPTICS
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group5
International Technology Roadmap for Semiconductors
2011 2012 2013 2014 2015 2016 2017 2018 2019 2020
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group6
International Technology Roadmap for Semiconductors2011 2012 2013 2014 2015 2016 2017 2018 2019 2020
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group7
International Technology Roadmap for Semiconductors
2011 2012 2013 2014 2015 2016 2017 2018 2019 2020
� Bulk Gases: Relatively stable purity requirements
� Most demanding purity is for Lithography and Metrology(inspection) applications
� EUV and New Immersion Platforms will require tighter specs for H2, CO2
� Customized analytical technologies have been developed to asses purity at sub-pptV levels
� Specialty Gases: Increasing concern for metals removal
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group8
Why Gas Purification is Required?
Bulk Purification
POU Purification
Lines & components
Impurities collection
Tank / Cylinder Reactor
Impurities
Impurities
Impurities
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group9
Moisture Fluctuation in Nitrogen
0
5
10
15
20
25
30
35
40
45
50
30 60 90 120 150 180 210 240 270 300 330 360 390 420 450 480 510 540 570 600 630 660 690 720 750 780
ppbV
:
min
Purified Gas
Room Temperature 20.5 °C
H2O 0.7 ppbV
Purifier By-Pass
Room Temperature 20.5 °C
H2O 6 ppbV
Purifier By-Pass
Room Temperature 20->28 °C
H2O 15 ppbV
Purifier By-Pass
Flow from 6 -> 2 slpm
H2O 27 ppbV
Purifier By-Pass
Pressure from 5 -> 3 Kg/cm2
H2O 48 ppbV
Purified Gas
Room Temperature 28 °C
Pressure 3 Kg/cm2
Flow 2 slpm
H2O 0.7 ppbV
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group10
HCl Purification Activities with US end user
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group11
HCl Purification: Fe/Cr/Cu/Ni Generation/Removal
Media 302 Impinger 1 Impinger 2 Impinger 1 SST
MetalMetal Generation
(ppmw)
Metal after SST
(ppmw)Trap Efficiency
Metal Generation
(mg)Metal on SST (mg)
Fe
1.3 0.03 98% 0.127 0.142
1.2 0.02 98% 0.118 0.106
1.3 0.01 99% 0.129 0.13
1.4 0.03 98% 0.137 0.148
3.1 0.03 99% 0.307 0.318
3.3 0.02 99% 0.328 0.302
Cr1.2 0.03 98%
6.54 0.03 100%
Cu
0.08 0.005 94%
0.03 0.003 91%
0.05 0.005 91%
Ni0.18 0.018 91%
0.5 0.01 98%
0.003 micron PF Metal 1.3 1.2 8%
0.003 micron PF Teflon 1.5 1.3 13%
Metals could be present in corrosive gases
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Lithography (Dry – Immersion-EUV)
Projection Lens
Laser Beam
Purified H2OWafer
Wafer Stage
PCDA
• Volatile Acids removal (as SO2) at pptV levels
• Volatile Bases removal (as NH3)at pptV levels
• Condensable (as n-Decane) and non Condensable (as Toluene)
Hydrocarbons at pptV levels
• Refractories (as HMDSO) at pptV levels
• H2O spec at ppbV levels
• O2 at pptV levels
• CO, CO2 at ppb levels
CO2
EUV Tool
EUV Source
PCDA
CO2
H2
N2
Ar
H2
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group13
Facility Layout with XCDA/CO2 Purifier
SAES XCDA Purifier
2500/2500/600 m3/hr
CDA/CO2PCDA/CO2
Pressure Regulator Particle Filter
UHP Piping
Reticle
Stock
XCDA only
Litho 1
Litho 2
Litho 3
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group14
PS22 Efficiency Test
PURIFIER INLET
PURIFIER OUTLET
ImpuritiesINLET
(ppm)
OUTLET
(ppm)
CollecTorr
(ppm)
SO2 1.11 < 0.0001 < 0.000001
NH3 1.24 < 0.0001 < 0.000005
HMDSO 1.94 < 0.0001 < 0.000001
TMS 0.2 < 0.0001 < 0.000001
H2O 910 < 0.0001
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group15
MC Monitoring Methods: Real Time Conventional Techniques
� Chemiluminescence
(LOD 0.2 ppb)
�NO, NO2, NOx,NH3
� Pulsed Fluorescence
(LOD 0.2 ppb)
� SO2
� Ion Mobility Spectrometry
(LOD 0.2 ppb)
�Acids, Bases
� Photo-Acoustic IR technology
(LOD 0.5 ppb)
�NH3, Siloxanes
� SAW Devices (LOD 0.02 g/cm2/Hz)
�Condensables (SiO2)
�Acids (Cu, Ag)
Expensive and Not suitable for part per
trillion levels analysis in CDA!
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group16
�Acids and bases collected using wet impingers (bubblers)
followed by Ion Chromatography
�Speciation capabilities; LOD low ppbv range
�Condensables, Refractories, VOCs collected with Purge & Trap
on charcoal traps followed by TD-GC (MS/FID)
�Speciation capabilities; LOD low ppbv range
Off-Line Analytical Campaigns
Successful but logistics, handling and
operation are quite difficult!
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group17
Acids-Bases Sampling Systems
HCs Sampling Systems
Connect Impinger and
Hydrocarbon Traps with
suitable manifold and start
sampling collection
MC Monitoring Methods: Real Time Conventional Techniques
Sampling kit handling and logistic
are not user friendly
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group18
Collect Torr Sampling System
� Lithography tool qualification
� User friendly: easy handling, installation
and shipment
� Possible in-tool installation (unique)
� State-of-the-art analytical laboratory
� Contaminant root cause analysis
� Purification solutions available,
leveraging 20 years of experience in the
field…
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group19
Conclusions
� Defect reduction in the fabrication of Nano-structured devices for Semiconductor and Compound Semiconductor applications is tightly related with process gas chemical purity levels.
� Leading edge Lithography and Metrology applications will require gas purities in the pptV range with impurities never seen for standard bulk gases
� Customized analytical technologies had and will be developed to asses purity at sub-pptV levels
m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group20
Acknowledgements
International Technology Roadmap for Semiconductors Group
Tim Johnson, Marco Succi, Larry Rabellino
w w w. s a e s g r o u p . c o m
Thank you for your attention