The Future of Leadership Memory and Storage Technology for PCsDavid Lundell
General Manager, Intel Optane Group, Client Division
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Client Product Overview
Intel® Optane™ memory H10 - NOWIntel® Optane™ memory H20– Q2’21
Ultimate ResponsivenessPerformance and mainstream
productivity, gaming, content creation
Intel® Optane™ Technology + Intel® QLC 3D NAND
Intel® SSD 660p/665p – NOWIntel® SSD 670p – Q1’21
Optimized StorageEvery day computing
Mainstream gaming / content creation
Intel® QLC 3D NAND Intel® Optane™ Technology
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Next-Gen 144-Layer QLC 3D NAND
3 2 L T L CG e n 1
6 4 L Q L CG e n 2
9 6 L Q L CG e n 3
1 4 4 L Q L CG e n 4
2 0 1 6
La
ye
rs
2 0 1 7 2 0 1 9 2 0 2 1
3 2 L
6 4 L9 6 L
1 4 4 L
Bit DensityIncrease
~ 5 0 %
Bit DensityIncrease
~ 5 0 %
Bit DensityIncrease
1 3 3 %
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Introducing the Intel® SSD 670pNext gen 144-layer QLC 3D NAND SSD for mainstream computing
• Next gen controller
• Pyrite 2.0 security
• Power loss notification support2TB1TB512GB
• End-to-end data protection
• 150TBW per 512GB
• PCIe 3.0
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Improved Dynamic SLC Cache
Unused QLCcapacity
Used QLCcapacity
QLC mapped asSLC SPAN
Used QLCcapacity
Unused QLCcapacity
Used QLCcapacity
Unused QLCcapacity
QLC mapped asSLC SPAN QLC mapped as
SLC SPAN
Used QLCcapacity
Unused QLCcapacity
QLC mapped asSLC SPAN
Decrease in used capacity, triggers SLC span increase
3
4
Static-SLC SPAN Static-SLC SPAN Static-SLC SPAN Static-SLC SPAN
1
2
Increase in used capacity, triggers SLC span decrease
1
2
3
4
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Improved Dynamic SLC CacheIntel® SSD 670p extends the use of Dynamic SLC beyond prior gen QLC SSDs
0
0.2
0.4
0.6
0.8
1
1.2
0% 25% 50% 65% 75% 85% 100%
Rel
ativ
e S
LC C
ache
Ava
ilabl
e
User data as a % of SSD capacity
Available SLC Cache SIZE vs USED capacity
Intel® SSD 660p Intel® SSD 670p
2TB
SSD280GB
1TB
SSD140GB
Dynamic SLCSize varies based on capacity used
Static SLCSize fixed, independent of capacity used 512gb
SSD70GB
+11%Gen-over-Gen
Source: Intel representation of architecture based on mathematical model. Results may vary..
Max SLC Capacity
256GB
24GB
128GB
12GB
64GB
6GB
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Intel® Optane™ Memory for the PC
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Intel® Optane™ Memory Client Strategy
Intel® Optane™ Technology
Intel® QLC 3D NAND Technology
Instant on
Responsiveness
Worry free battery life
Seamless multitasking
Ample data store
Through Innovation
On the Intel® Architecture Platform
Exceed End User’s Needs
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Launch Games
Play
31%FASTER
Launch Project Files
Create
51%FASTER
Up to Up to
Launch Documents
Work
35%FASTER
Up to
Compared to a system with PCIe 3.0 TLC NAND SSDvs. PCIE 3.0
Intel® Optane™ Memory H10 with SSDson 11th Gen Intel® Core™ i7 mobile platform
SSDs with Intel® Optane™ memory are the fastest1
as compared to NAND SSDs.
Source: See Appendix for workloads and configurations. Results may vary.
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IntroducingIntel® Optane™ Memory H20 with solid state storage
Intel’s next gen performance and capacity storage for the PC, combining Intel® Optane™ Memory and Intel® QLC 3D NAND
for thin and light notebooks, and space constrained platforms.
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Intel® Optane™ Memory H20 with Solid State Storage
Single device fits in small spaces with its versatile M.2 form factor designed for mobile device and desktops
Intel® Optane™ Technology
Accelerate your PC with breakthrough responsiveness so you can search and find files faster, and launch applications quicker
Conquer storage-demanding applicationswith smart software that automatically learns your computing behaviors to accelerate frequent tasks
Intel® QLC 3D NAND Technology
Get up to 1TB of storage capacity with an Intel® QLC 3D NAND SSD into a smaller footprint
Transfer data at PCIe speeds, unleashing the full power of QLC, and getting from data to productivity faster
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Intel® Optane™ Memory H20 with Solid State StorageExpect improved performance, lower latencies, lower power consumption
SpecificationsIntel® Optane™ Technology &
Intel® QLC 3D NAND Technology
Interface: PCIe 3.0x4 with NVMe
M.2 2280 Single Sided (2280-S3-M)
ImprovementsUpgraded 3D XPoint Media
Next Gen QLC NAND
New NAND and Intel Optane controllers
Pyrite 2.0 Security
Capacities32GB Intel® Optane™ Memory + 512GB Storage
32GB Intel® Optane™ Memory + 1TB Storage
Use CasesOffice Productivity
Content Creation
Gaming
System RequirementsUpcoming platform support planned
11th Gen Intel® Core U Series Processor
Intel 500 Series Chipset
RST Driver 18.1
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Future Leadership TechnologyIntel® SSD 670p Intel® Optane™ Memory H20 with solid state storage
Launch Target: Q2’21Launch Target: Q1’21
Ultimate ResponsivenessPerformance and mainstream
productivity, gaming, content creation
Optimized StorageEvery day computing
Mainstream gaming / content creation
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Legal Disclaimers
All product plans and roadmaps are subject to change without notice.
Intel optimizations, for Intel compilers or other products, may not optimize to the same degree for non-Intel products.
Intel technologies may require enabled hardware, software, or service activation.
Performance varies by use, configuration, and other factors. Learn more at www.intel.com/PerformanceIndex.
Performance results are based on testing as of dates shown in the configurations and may not reflect all publicly available security updates. See backup for configuration details. No product or component can be absolutely secure.
Your costs and results may vary.
Intel does not control or audit third-party data. You should consult other sources to evaluate accuracy.
Results have been estimated or simulated.
© Intel Corporation. Intel, the Intel logo, and other Intel marks are trademarks of Intel Corporation or its subsidiaries. Other names and brands may be claimed as the property of others.
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AppendixSlide: “Intel® Optane™ Memory H10 with SSD”1.Tested by Intel as of August 17, 2020, in the following common laptop use cases:(1) a collection of benchmarks and real-world workloads with drives at 50% prefill including PCMark 10 storage tests, CrystalDiskMark 7, email launch, PDF editor launch, photo editor launch, video editor launch, and selected games. (2) a series of Iometer tests at QD1 and QD2 with drives at 50% prefill. Tests were composed of various combinations of sequential and random read and write scenarios, designed to approximate real-world client PC usage based on Intel research, in both single and mixed modes with span size 8GB.
System configuration: Intel® Core™ i7-1165G7 processor (4C8T, Turbo up to 4.7GHz) on Intel reference platform. Graphics: Intel Iris Xe. Memory: 16GB (2x8GB) DDR4. Storage: 32GB+1TB Intel Optane memory H10 with solid state storage (with Intel Rapid Storage Technology driver 18.0.0.1138) vs. Samsung 970 PRO, Samsung 970 EVO Plus, Sabrent Rocket NVMe 4.0, and Seagate FireCuda 520 (all 1TB NAND with Microsoft Windows 10 in-box PCIe driver). OS: Microsoft Windows 10 (version 18363.1016).Result: Intel Optane memory H10 with solid state storage prevails in the majority of tests against each NAND SSD.
2.As measured by Microsoft Word 365 launch with local file copy workload on 11th Gen Intel Core i7-1185G7 processor with 512GB Intel Optane memory H10 with solid state storage vs. 512GB Toshiba XG6 (PCIe 3.0 TLC NAND SSD).
3.System configuration: Processor: Intel Core i7-1165G7 processor (TGL-U, 15W PL1, 4C8T). Memory: LPDDR4-4267MHz, 16GB (2x8GB). Display resolution: 1920 x 1080. OS: Microsoft Windows 10 20H1-19041.326. Graphics: Intel Xe graphics. Graphics driver: 27.20.100.8431. Bios version: TGLSFWI1.R00.3284.A00.2007091654 measured on Intel reference board.Performance results are based on testing as of August 26, 2020, and may not reflect all publicly available updates. No product or component can be absolutely secure.
4.As measured by League of Legends launch with local file copy workload on 11th Gen Intel Core i7-1185G7 processor with 512GB Intel Optane memory H10 with solid state storage vs. 512GB Toshiba XG6 (PCIe 3.0 TLC NAND SSD).System configuration: Processor: Intel Core i7-1165G7 processor (TGL-U, 15W PL1, 4C8T). Memory: LPDDR4-4267MHz, 16GB (2x8GB). Display resolution: 1920 x 1080. OS: Microsoft Windows 10 20H1-19041.326. Graphics: Intel Xe graphics. Graphics driver: 27.20.100.8431. Bios version: TGLSFWI1.R00.3284.A00.2007091654 measured on Intel reference board.Performance results are based on testing as of August 26, 2020, and may not reflect all publicly available updates. No product or component can be absolutely secure.
5.As measured by Adobe Photoshop launch with local file copy workload on 11th Gen Intel Core i7-1185G7 processor with 512GB Intel Optane memory H10 with solid state storage vs. 512GB Toshiba XG6 (PCIe 3.0 TLC NAND SSD).System configuration: Processor: Intel Core i7-1165G7 processor (TGL-U, 15W PL1, 4C8T). Memory: LPDDR4-4267MHz, 16GB (2x8GB). Display resolution: 1920 x 1080. OS: Microsoft Windows 10 20H1-19041.326. Graphics: Intel Xe graphics. Graphics driver: 27.20.100.8431. Bios version: TGLSFWI1.R00.3284.A00.2007091654 measured on Intel reference board.Performance results are based on testing as of August 26, 2020, and may not reflect all publicly available updates. No product or component can be absolutely secure.
Slide: Intel® Optane™ Memory H20 with solid state storage. Battery life varies by use, configuration and other factors. Learn more at www.Intel.com/PerformanceIndex.
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Floating Gate Cell vs. Charge Trap Cell
Floating gate cell Good program/erase threshold voltage window Good charge isolation between cells Good data retention
Charge trap cell Poor program/erase threshold voltage window Poor charge isolation between cells Poor data retention
Discrete charge storage node
Continuous charge storage node
Charge Trap 3D NANDFloating Gate 3D NAND
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0%
100%
FG CTF
Floating Gate NAND Delivers High Data Retention
Smaller read window creates accuracy challenge Even smaller amounts of leakage can create read
inaccuracies
Floating gate NAND cell superior to charge trap flash for data retention better QLC capability
BIT
S/C
ELL
1b/c2 states
2b/c4 states
3b/c8 states
4b/c16 states
0 1
00 01 10 11
VOLTAGE TOTAL PER CELL
READ WINDOW
Time-0 2 days/30c 5 years/30c2
Tot
al R
ead
Win
dow
(%)
Charge Loss Over Time for 4 bits per cell1
Floating Gate vs. Charge Trap Flash cellBits/Cell Challenge
1,Source: Measurements performed on components from QLC SSDs using Floating Gate and Charge Trap Flash technology. Measurement platform used was Teradyne Magnum. Memory test systems, and programming using random patterns and margins were quantified using customer commands. Data measured in 08/2019. Results may vary. 2Ea assumed = 1.0eV