Room 211 Room 212 Room 213 Room 221 Room 222 Room 223 Room 231 Room 233 Room 241 Room 243 Room 244 Room 246Area 9:Novel Function & SpintronicsA-7:Quantum Computational Devices

Area 2:MemoryB-7:Flash and 1T-DRAM

Area 1:Advanced CMOSC-7:Ferroelectric and Tunnel FET II

Area 4:Power & High-speedD-7:GaN Device Technologies II

Area 11:Growth & CharacterizationE-7:Advanced Growth of Widegap Semiconductors

Area 6:EnergyF-7:Photoctalayst/Solar Cells

Area 3:InterconnectG-7:MEMS Application

Area 5 & SpecialJ-7:LiDAR and Imaging Applications

Area 7:Organic & BioK-7:Chemical and Gas Sensors

Area 8:Low DM-7:2D Materials & Devices II

Area 10:Thin FilmN-7:Advanced IGZO Processes and Devices

(9:00-10:45)Session Chair: K. Nemoto (NII), T. Kodera (Tokyo Tech)

(9:00-10:45)Session Chair: K. Yamamoto (Toshiba Memory Corp.), Y. Jono (Micron Memory Japan Inc.)

(9:00-10:45)Session Chair: S. Takeda (NAIST), F.L. Yang (Academia Sinica)

(9:00-10:45)Session Chair: T. Suzuki (JAIST), T. Ide (AIST)

(9:00-10:45)Session Chair: A. Kikuchi (Sophia Univ.), T. Yamaguchi (Kogakuin Univ.)

(9:45-10:45)Session Chair: M. Ikegami (Toin Univ. of Yokohama), Y. Kurokawa (Nagoya Univ.)

(9:00-10:45)Session Chair: T. Minari (NIMS), K. Shiojima (Univ. of Fukui)

(9:00-10:45)Session Chair: N. Nishiyama (Tokyo Tech), T. Minotani (NTT Device Tech. Labs.)

(9:00-11:00)Session Chair: T. Sakata (Univ. of Tokyo), H. Tanaka (Panasonic Corp.)

(9:00-10:30)Session Chair: M. Takamura (NTT BRL), H. Kageshima (Shimane Univ.)

(9:00-10:15)Session Chair: P.T. Liu (NCTU), S.H.K. Park (KAIST)

9:00 A-7-01 (Invited)Controlling spin-orbit interaction in scalable silicon-MOS quantum dot architectures○T. Tanttu1, B. Hensen1, K.W. Chan1, H. Yang1, W. Huang1, M. Fogarty1, D. Culcer1,2, K. Itoh3, A. Laucht1, A. Morello1, A. Dzurak1, 1.The Univ. of New South Wales (Australia), 2.ARC Centre for Excellence in Future Low-Energy Electronics Technologies (Australia), 3.Keio Univ. (Japan)

9:00 B-7-01 (Invited)Progress of Single-Gate Vertical Channel (SGVC) 3D NAND Technology and Introduction of 3D AND-type NVM○H.-T. Lue1, 1.Macronix Int’l. Co., Ltd. (Taiwan)

9:00 C-7-01Deep Experimental Analysis of Negative Capacitance in HfZrOx-Based Field-Effect Transistors○J. Li1, J. Zhou1,2, G. Han1, Y. Liu1, Y. Hao1, 1.Xidian University (China), 2.University of California at Berkeley (USA)

9:00 D-7-01 (Invited)Recent Topics of Vertical GaN Power Devices - Trench MOS SBDs and Trench MOSFETs -○T. Oka1, T. Ina1, Y. Ueno1, N. Tanaka1, J. Kurosaki1, T. Suzuki1, J. Nishii1, K. Hasegawa1, K. Yasunishi1, G. Nishio1, S. Murakami1, N. Murakami1, 1.TOYODA GOSEI Co., Ltd. (Japan)

9:00 E-7-01 (Invited)High-quality diamond epitaxial layer growth and electron devices application○Y. Koide1, J. Liu1, M. Imura1, M.Y. Liao1, 1.NIMS (Japan)

9:00 G-7-01 (Invited)MEMS Vibrational Energy Harvesters for Perpetual Electronics ○H. Toshiyoshi1, 1.Univ. of Tokyo (Japan)

9:00 J-7-01 (Invited)High Power Slow Light VCSEL Amplifier for LiDAR Applications○F. Koyama1, 1.Tokyo Tech (Japan)

9:00 K-7-01 (Invited)Odor Sensing System with Multi-dimensional Data Analysis○T. Nakamoto1, 1.Tokyo Tech (Japan)

9:00 M-7-01Vth control in p-type graphene barristor using a polymer doping process○S.M. Kim1,2, S. Heo1,2, H. Lee1,2, H.I. Lee1,2, K. Kim1,2, Y.J. Kim1,2, S.Y. Kim1,2, B. Allouche1, B.H. Lee1,2, 1.Gwangju Inst. of Sci. and Tech. (Korea), 2.Center for Emerging Electric Devices and Systems (Korea)

9:00 N-7-01Enhancement Performance of Co-sputtered Ti-IGZO Thin-Film Transistors with Al-ZrO2 Gate DielectricC.X. Lin1, S.J. Wang1, R.M. Ko1, S.Y. Wang1, H.Y. Chen1, C.K. Liao1, S.T. Hsiao1, ○B.C. You1, 1.Univ. of Cheng Kung (Taiwan)

9:15 C-7-02First Demonstration of Ferroelectric Lanthanum-Doped Hafnium Oxide for InGaAs Negative Capacitance MOSFET with Sub-60 mV/dec Subthreshold SwingQ.H. Luc1, ○K.Y. Zhang1, C.C. Fan Chiang1, Y.D. Jin1, H.B. Do1, M.T.H. Ha1, S.H. Huynh1, P. Huang1, C.W. Hsu1, S.P. Wang1, Y.C. Lin1, Y.E. Chang1, 1.National Chiao Tung Univ. (Taiwan)

9:15 M-7-02Study on origin for Dit through SS in monolayer MoS2/h-BN/graphite FET○S. Toyoda1, T. Taniguchi2, K. Watanabe2, K. Nagashio1, 1.Univ. of Tokyo (Japan), 2.NIMS (Japan)

9:15 N-7-02Mobility enhancement of InGaZnOx thin-film transistor by hetero-channel with a different composition.○M. Furuta1, D. Koretomo1, R. Higashi1, 1.Kochi Univ. of Tech. (Japan)

9:30 A-7-02Control fidelities in isotopically natural and enriched silicon quantum dot qubits○K. Takeda1, J. Yoneda1, T. Otsuka1,2,3, T. Nakajima1, M. Delbecq1,4, G. Allison1, A. Noiri1, Y. Hoshi5, N. Usami6, K. Itoh7, S. Oda8, T. Kodera9, S. Tarucha10, 1.RIKEN, CEMS (Japan), 2.JST, PRESTO (Japan), 3.Tohoku Univ. (Japan), 4.LPA, Ecole Normale Supérieure-PSL Res. Univ. (France), 5.IIS, Univ. of Tokyo (Japan), 6.Nagoya Univ. (Japan), 7.Keio Univ. (Japan), 8.Dept. of Physical Electronics and Quantum Nanoelectronics Res. Center, Tokyo Tech (Japan), 9.Dept. of Electrical and Electronic Engineering, Tokyo Tech (Japan), 10.Dept. of Applied Physics, Univ. of Tokyo (Japan)

9:30 B-7-02Effect of String Tapering on Threshold Voltage Distribution and Its Mitigation in a Vertical Channel 3D NAND Flash Memory○U.M. Bhatt1, A. Kumar2, M. Pakala2, S.K. Manhas1, 1.Indian Inst. of Tech. (IIT), Roorkee (India), 2.Applied Materials Inc. (USA)

9:30 C-7-03Impact of Top-ZrO2 Nucleation Layer on Ferroelectricity of HfxZr1−xO2 Thin Films for Ferroelectric Field Effect Transistor Application○T. Onaya1,2,3, T. Nabatame2, N. Sawamoto1, A. Ohi2, N. Ikeda2, T. Nagata2, A. Ogura1, 1.Meiji Univ. (Japan), 2.NIMS (Japan), 3.JSPS Research Fellow (Japan)

9:30 D-7-02Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-Bandgap Light Absorption Due to Franz-Keldysh Effect○T. Maeda1, T. Narita2, H. Ueda2, M. Kanechika2, T. Uesugi2, T. Kachi3, T. Kimoto1, M. Horita1, J. Suda1,3, 1.Kyoto Univ. (Japan), 2.TOYOTA Central R&D Labs., Inc. (Japan), 3.Nagoya Univ. (Japan)

9:30 E-7-02 (Invited)HVPE growth of bulk GaN and Homoepitaxy for Device Applications○K. Xu1,2, 1.Chinese Academy of Sci. (China), 2.Suzhou Nanowin Sci. and Tech. Co., Ltd. (China)

9:30 G-7-02Electrodeposition of High Strength Au-Cu Alloys for MEMS Device ○T.F.M. Chang1, H. Tang1, K. Nitta1, C.Y. Chen1, T. Nagoshi2, D. Yamane1, T. Konishi3, K. Machida1, K. Masu1, M. Sone1, 1.Tokyo Tech (Japan), 2.AIST (Japan), 3.NTT AT (Japan)

9:30 J-7-02 (Invited)Advanced LiDAR SoC for Automobile Range-Imaging○A. Sai1, K. Yoshioka1, H. Kubota2, S. Kondo1, T.T. Ta1, H. Okuni1, K. Kimura2, Y. Oota2, T. Sugimoto2, D. Kurose2, H. Ishii2, N. Matsumoto2, 1.Toshiba Corp. Res. & Development Center (Japan), 2.Toshiba Electronic Devices & Storage Corp. (Japan)

9:30 K-7-02The Characteristics of MgO Sensing Membrane applied in Electrolyte-Insulator-Semiconductor after Rapid Thermal annealing in O2 and N2 ambient○M. Das1, C.L. Chang1, C.H. Kao1, T. Chakraborty1, C.F. Lin1, 1.Chang Gung Univ. (Taiwan)

9:30 M-7-03p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric○W. Zhang1, S. Netsu1, T. Kanazawa1, T. Amemiya2, Y. Miyamoto1, 1.Dept. Electrical and Electronic Engineering, Tokyo Tech (Japan), 2.IIR, Tokyo Tech (Japan)

9:30 N-7-03Mechanism of Threshold Voltage Control by Back Gates in CAAC-IGZO FETs○R. Honda1, K. Tsuda1, T. Takeuchi1, K. Tochibayashi1, T. Atsumi1, K. Kato1, S. Yamazaki1, 1.Semiconductor Energy Laboratory Co., Ltd. (Japan)

9:45 A-7-03Coherent oscillations of charge states in a Si single-electron pump at 4.2 K○G. Yamahata1, S. Ryu2, H.-S. Sim2, N. Johnson1, M. Kataoka3, A. Fujiwara1, 1.NTT Basic Res. Labs. (Japan), 2.KAIST (Korea), 3.National Physical Lab. (UK)

9:45 B-7-03Hot Carrier Programing Performance Study on 2T 40nm Flash Memory Cell Array For Variability Evaluation○T. Kempf1,2,3, V. Della Marca2, M. Mantelli1, J. Postel-Pellerin2, J.-M. Portal2, P. Masson3, A. Regnier1, S. Niel1, 1.STMicroelectronics (France), 2.IM2NP Lab., Univ. of Aix-Marseille (France), 3.Polytech'Lab, Univ. of Nice Sophia-Antipolis (France)

9:45 C-7-04Effect of internal-strain caused by monoclinic phase formation on ferroelectric phase formation of ZrO2○S. Shibayama1, T. Nishimura1, X. Tian1, S. Migita2, A. Toriumi1, 1.Univ. of Tokyo (Japan), 2.AIST (Japan)

9:45 D-7-03Damage mechanism of GaN/DBA die-attach module with Ag sinter paste by thermal shock○D. Kim1, C. Chen1, C. Pei2, Z. Zhang1, S. Nagao1, A. Suetake1, T. Sugahara1, K. Suganuma1, 1.ISIR, Osaka univ. (Japan), 2.Academy of Electronics and Info.,Tech. (China)

9:45 F-7-01Hydrogen-Treated α-Fe2O3 Nanorods for Solar Water Splitting○H. Ma1, M.A. Mahadik1, J.W. Park1, M. Kumar2, H.S. Chung3, W.S. Chae4, H.H. Lee2, S.H. Choi2, J.S. Jang1, 1.Chonbuk National University (Korea), 2.PAL, POSTECH (Korea), 3.Korea Basic Science Institute, Jeonju Center (Korea), 4.Korea Basic Science Institute, Daegu Center (Korea)

9:45 G-7-03Design and fabrication of sputtered AlOx/CVD SiNx/sputtered AlOx diaphragm for Spin-MEMS microphones○S. Baba1, Y. Fuji1, A. Yuzawa1, T. Nagata1, K. Masunishi2, Y. Higashi1, S. Kaji1, K. Okamoto1, T. Ono1, M. Hara1, 1.Corporate R & D Center, Toshiba Corp. (Japan), 2.Corporate Manufacturing Engineering Center, Toshiba Corp. (Japan)

9:45 K-7-03Selective gas sensing using WO3 nanoparticles and zeolites hybrid structure for human cutaneous gas sensors○J. Park1, Y. Yamada2, H. Tabata1, 1.Univ. of Tokyo (Japan), 2.Docomo Corp. (Japan)

9:45 M-7-04Flicker Noise in Bilayer ReS2 Transistors on HfO2 and its Application for pH Sensing○W. Liao1,2, W. Wei1,2, Z. Zeng1,2, W.K. Chim1, C. Zhu1,2, 1.Department of Electrical and Computer Engineering, National University of Singapore (Singapore), 2.Centre for Advanced 2D Materials, National University of Singapore (Singapore)

9:45 N-7-04Mechanism of Negative Bias Illumination Stress in InGaZn Oxide TFTsH. Li1, Y. Guo2, ○J. Robertson1, 1.Cambridge Univ. (UK), 2.Swansea Univ. (UK)

Thursday, September 13

Room 211 Room 212 Room 213 Room 221 Room 222 Room 223 Room 231 Room 233 Room 241 Room 243 Room 244 Room 246Area 9:Novel Function & SpintronicsA-7:Quantum Computational Devices

Area 2:MemoryB-7:Flash and 1T-DRAM

Area 1:Advanced CMOSC-7:Ferroelectric and Tunnel FET II

Area 4:Power & High-speedD-7:GaN Device Technologies II

Area 11:Growth & CharacterizationE-7:Advanced Growth of Widegap Semiconductors

Area 6:EnergyF-7:Photoctalayst/Solar Cells

Area 3:InterconnectG-7:MEMS Application

Area 5 & SpecialJ-7:LiDAR and Imaging Applications

Area 7:Organic & BioK-7:Chemical and Gas Sensors

Area 8:Low DM-7:2D Materials & Devices II

Area 10:Thin FilmN-7:Advanced IGZO Processes and Devices

(9:00-10:45)Session Chair: K. Nemoto (NII), T. Kodera (Tokyo Tech)

(9:00-10:45)Session Chair: K. Yamamoto (Toshiba Memory Corp.), Y. Jono (Micron Memory Japan Inc.)

(9:00-10:45)Session Chair: S. Takeda (NAIST), F.L. Yang (Academia Sinica)

(9:00-10:45)Session Chair: T. Suzuki (JAIST), T. Ide (AIST)

(9:00-10:45)Session Chair: A. Kikuchi (Sophia Univ.), T. Yamaguchi (Kogakuin Univ.)

(9:45-10:45)Session Chair: M. Ikegami (Toin Univ. of Yokohama), Y. Kurokawa (Nagoya Univ.)

(9:00-10:45)Session Chair: T. Minari (NIMS), K. Shiojima (Univ. of Fukui)

(9:00-10:45)Session Chair: N. Nishiyama (Tokyo Tech), T. Minotani (NTT Device Tech. Labs.)

(9:00-11:00)Session Chair: T. Sakata (Univ. of Tokyo), H. Tanaka (Panasonic Corp.)

(9:00-10:30)Session Chair: M. Takamura (NTT BRL), H. Kageshima (Shimane Univ.)

(9:00-10:15)Session Chair: P.T. Liu (NCTU), S.H.K. Park (KAIST)

9:00 A-7-01 (Invited)Controlling spin-orbit interaction in scalable silicon-MOS quantum dot architectures○T. Tanttu1, B. Hensen1, K.W. Chan1, H. Yang1, W. Huang1, M. Fogarty1, D. Culcer1,2, K. Itoh3, A. Laucht1, A. Morello1, A. Dzurak1, 1.The Univ. of New South Wales (Australia), 2.ARC Centre for Excellence in Future Low-Energy Electronics Technologies (Australia), 3.Keio Univ. (Japan)

9:00 B-7-01 (Invited)Progress of Single-Gate Vertical Channel (SGVC) 3D NAND Technology and Introduction of 3D AND-type NVM○H.-T. Lue1, 1.Macronix Int’l. Co., Ltd. (Taiwan)

9:00 C-7-01Deep Experimental Analysis of Negative Capacitance in HfZrOx-Based Field-Effect Transistors○J. Li1, J. Zhou1,2, G. Han1, Y. Liu1, Y. Hao1, 1.Xidian University (China), 2.University of California at Berkeley (USA)

9:00 D-7-01 (Invited)Recent Topics of Vertical GaN Power Devices - Trench MOS SBDs and Trench MOSFETs -○T. Oka1, T. Ina1, Y. Ueno1, N. Tanaka1, J. Kurosaki1, T. Suzuki1, J. Nishii1, K. Hasegawa1, K. Yasunishi1, G. Nishio1, S. Murakami1, N. Murakami1, 1.TOYODA GOSEI Co., Ltd. (Japan)

9:00 E-7-01 (Invited)High-quality diamond epitaxial layer growth and electron devices application○Y. Koide1, J. Liu1, M. Imura1, M.Y. Liao1, 1.NIMS (Japan)

9:00 G-7-01 (Invited)MEMS Vibrational Energy Harvesters for Perpetual Electronics ○H. Toshiyoshi1, 1.Univ. of Tokyo (Japan)

9:00 J-7-01 (Invited)High Power Slow Light VCSEL Amplifier for LiDAR Applications○F. Koyama1, 1.Tokyo Tech (Japan)

9:00 K-7-01 (Invited)Odor Sensing System with Multi-dimensional Data Analysis○T. Nakamoto1, 1.Tokyo Tech (Japan)

9:00 M-7-01Vth control in p-type graphene barristor using a polymer doping process○S.M. Kim1,2, S. Heo1,2, H. Lee1,2, H.I. Lee1,2, K. Kim1,2, Y.J. Kim1,2, S.Y. Kim1,2, B. Allouche1, B.H. Lee1,2, 1.Gwangju Inst. of Sci. and Tech. (Korea), 2.Center for Emerging Electric Devices and Systems (Korea)

9:00 N-7-01Enhancement Performance of Co-sputtered Ti-IGZO Thin-Film Transistors with Al-ZrO2 Gate DielectricC.X. Lin1, S.J. Wang1, R.M. Ko1, S.Y. Wang1, H.Y. Chen1, C.K. Liao1, S.T. Hsiao1, ○B.C. You1, 1.Univ. of Cheng Kung (Taiwan)

9:15 C-7-02First Demonstration of Ferroelectric Lanthanum-Doped Hafnium Oxide for InGaAs Negative Capacitance MOSFET with Sub-60 mV/dec Subthreshold SwingQ.H. Luc1, ○K.Y. Zhang1, C.C. Fan Chiang1, Y.D. Jin1, H.B. Do1, M.T.H. Ha1, S.H. Huynh1, P. Huang1, C.W. Hsu1, S.P. Wang1, Y.C. Lin1, Y.E. Chang1, 1.National Chiao Tung Univ. (Taiwan)

9:15 M-7-02Study on origin for Dit through SS in monolayer MoS2/h-BN/graphite FET○S. Toyoda1, T. Taniguchi2, K. Watanabe2, K. Nagashio1, 1.Univ. of Tokyo (Japan), 2.NIMS (Japan)

9:15 N-7-02Mobility enhancement of InGaZnOx thin-film transistor by hetero-channel with a different composition.○M. Furuta1, D. Koretomo1, R. Higashi1, 1.Kochi Univ. of Tech. (Japan)

9:30 A-7-02Control fidelities in isotopically natural and enriched silicon quantum dot qubits○K. Takeda1, J. Yoneda1, T. Otsuka1,2,3, T. Nakajima1, M. Delbecq1,4, G. Allison1, A. Noiri1, Y. Hoshi5, N. Usami6, K. Itoh7, S. Oda8, T. Kodera9, S. Tarucha10, 1.RIKEN, CEMS (Japan), 2.JST, PRESTO (Japan), 3.Tohoku Univ. (Japan), 4.LPA, Ecole Normale Supérieure-PSL Res. Univ. (France), 5.IIS, Univ. of Tokyo (Japan), 6.Nagoya Univ. (Japan), 7.Keio Univ. (Japan), 8.Dept. of Physical Electronics and Quantum Nanoelectronics Res. Center, Tokyo Tech (Japan), 9.Dept. of Electrical and Electronic Engineering, Tokyo Tech (Japan), 10.Dept. of Applied Physics, Univ. of Tokyo (Japan)

9:30 B-7-02Effect of String Tapering on Threshold Voltage Distribution and Its Mitigation in a Vertical Channel 3D NAND Flash Memory○U.M. Bhatt1, A. Kumar2, M. Pakala2, S.K. Manhas1, 1.Indian Inst. of Tech. (IIT), Roorkee (India), 2.Applied Materials Inc. (USA)

9:30 C-7-03Impact of Top-ZrO2 Nucleation Layer on Ferroelectricity of HfxZr1−xO2 Thin Films for Ferroelectric Field Effect Transistor Application○T. Onaya1,2,3, T. Nabatame2, N. Sawamoto1, A. Ohi2, N. Ikeda2, T. Nagata2, A. Ogura1, 1.Meiji Univ. (Japan), 2.NIMS (Japan), 3.JSPS Research Fellow (Japan)

9:30 D-7-02Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-Bandgap Light Absorption Due to Franz-Keldysh Effect○T. Maeda1, T. Narita2, H. Ueda2, M. Kanechika2, T. Uesugi2, T. Kachi3, T. Kimoto1, M. Horita1, J. Suda1,3, 1.Kyoto Univ. (Japan), 2.TOYOTA Central R&D Labs., Inc. (Japan), 3.Nagoya Univ. (Japan)

9:30 E-7-02 (Invited)HVPE growth of bulk GaN and Homoepitaxy for Device Applications○K. Xu1,2, 1.Chinese Academy of Sci. (China), 2.Suzhou Nanowin Sci. and Tech. Co., Ltd. (China)

9:30 G-7-02Electrodeposition of High Strength Au-Cu Alloys for MEMS Device ○T.F.M. Chang1, H. Tang1, K. Nitta1, C.Y. Chen1, T. Nagoshi2, D. Yamane1, T. Konishi3, K. Machida1, K. Masu1, M. Sone1, 1.Tokyo Tech (Japan), 2.AIST (Japan), 3.NTT AT (Japan)

9:30 J-7-02 (Invited)Advanced LiDAR SoC for Automobile Range-Imaging○A. Sai1, K. Yoshioka1, H. Kubota2, S. Kondo1, T.T. Ta1, H. Okuni1, K. Kimura2, Y. Oota2, T. Sugimoto2, D. Kurose2, H. Ishii2, N. Matsumoto2, 1.Toshiba Corp. Res. & Development Center (Japan), 2.Toshiba Electronic Devices & Storage Corp. (Japan)

9:30 K-7-02The Characteristics of MgO Sensing Membrane applied in Electrolyte-Insulator-Semiconductor after Rapid Thermal annealing in O2 and N2 ambient○M. Das1, C.L. Chang1, C.H. Kao1, T. Chakraborty1, C.F. Lin1, 1.Chang Gung Univ. (Taiwan)

9:30 M-7-03p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric○W. Zhang1, S. Netsu1, T. Kanazawa1, T. Amemiya2, Y. Miyamoto1, 1.Dept. Electrical and Electronic Engineering, Tokyo Tech (Japan), 2.IIR, Tokyo Tech (Japan)

9:30 N-7-03Mechanism of Threshold Voltage Control by Back Gates in CAAC-IGZO FETs○R. Honda1, K. Tsuda1, T. Takeuchi1, K. Tochibayashi1, T. Atsumi1, K. Kato1, S. Yamazaki1, 1.Semiconductor Energy Laboratory Co., Ltd. (Japan)

9:45 A-7-03Coherent oscillations of charge states in a Si single-electron pump at 4.2 K○G. Yamahata1, S. Ryu2, H.-S. Sim2, N. Johnson1, M. Kataoka3, A. Fujiwara1, 1.NTT Basic Res. Labs. (Japan), 2.KAIST (Korea), 3.National Physical Lab. (UK)

9:45 B-7-03Hot Carrier Programing Performance Study on 2T 40nm Flash Memory Cell Array For Variability Evaluation○T. Kempf1,2,3, V. Della Marca2, M. Mantelli1, J. Postel-Pellerin2, J.-M. Portal2, P. Masson3, A. Regnier1, S. Niel1, 1.STMicroelectronics (France), 2.IM2NP Lab., Univ. of Aix-Marseille (France), 3.Polytech'Lab, Univ. of Nice Sophia-Antipolis (France)

9:45 C-7-04Effect of internal-strain caused by monoclinic phase formation on ferroelectric phase formation of ZrO2○S. Shibayama1, T. Nishimura1, X. Tian1, S. Migita2, A. Toriumi1, 1.Univ. of Tokyo (Japan), 2.AIST (Japan)

9:45 D-7-03Damage mechanism of GaN/DBA die-attach module with Ag sinter paste by thermal shock○D. Kim1, C. Chen1, C. Pei2, Z. Zhang1, S. Nagao1, A. Suetake1, T. Sugahara1, K. Suganuma1, 1.ISIR, Osaka univ. (Japan), 2.Academy of Electronics and Info.,Tech. (China)

9:45 F-7-01Hydrogen-Treated α-Fe2O3 Nanorods for Solar Water Splitting○H. Ma1, M.A. Mahadik1, J.W. Park1, M. Kumar2, H.S. Chung3, W.S. Chae4, H.H. Lee2, S.H. Choi2, J.S. Jang1, 1.Chonbuk National University (Korea), 2.PAL, POSTECH (Korea), 3.Korea Basic Science Institute, Jeonju Center (Korea), 4.Korea Basic Science Institute, Daegu Center (Korea)

9:45 G-7-03Design and fabrication of sputtered AlOx/CVD SiNx/sputtered AlOx diaphragm for Spin-MEMS microphones○S. Baba1, Y. Fuji1, A. Yuzawa1, T. Nagata1, K. Masunishi2, Y. Higashi1, S. Kaji1, K. Okamoto1, T. Ono1, M. Hara1, 1.Corporate R & D Center, Toshiba Corp. (Japan), 2.Corporate Manufacturing Engineering Center, Toshiba Corp. (Japan)

9:45 K-7-03Selective gas sensing using WO3 nanoparticles and zeolites hybrid structure for human cutaneous gas sensors○J. Park1, Y. Yamada2, H. Tabata1, 1.Univ. of Tokyo (Japan), 2.Docomo Corp. (Japan)

9:45 M-7-04Flicker Noise in Bilayer ReS2 Transistors on HfO2 and its Application for pH Sensing○W. Liao1,2, W. Wei1,2, Z. Zeng1,2, W.K. Chim1, C. Zhu1,2, 1.Department of Electrical and Computer Engineering, National University of Singapore (Singapore), 2.Centre for Advanced 2D Materials, National University of Singapore (Singapore)

9:45 N-7-04Mechanism of Negative Bias Illumination Stress in InGaZn Oxide TFTsH. Li1, Y. Guo2, ○J. Robertson1, 1.Cambridge Univ. (UK), 2.Swansea Univ. (UK)

Thursday, September 13

Room 211 Room 212 Room 213 Room 221 Room 222 Room 223 Room 231 Room 233 Room 241 Room 243 Room 244 Room 246Area 9:Novel Function & SpintronicsA-7:Quantum Computational Devices

Area 2:MemoryB-7:Flash and 1T-DRAM

Area 1:Advanced CMOSC-7:Ferroelectric and Tunnel FET II

Area 4:Power & High-speedD-7:GaN Device Technologies II

Area 11:Growth & CharacterizationE-7:Advanced Growth of Widegap Semiconductors

Area 6:EnergyF-7:Photoctalayst/Solar Cells

Area 3:InterconnectG-7:MEMS Application

Area 5 & SpecialJ-7:LiDAR and Imaging Applications

Area 7:Organic & BioK-7:Chemical and Gas Sensors

Area 8:Low DM-7:2D Materials & Devices II

Area 10:Thin FilmN-7:Advanced IGZO Processes and Devices

10:00 A-7-04Optical Control of the Silicon–Vacancy Center in Diamond○M. Hanks1,2, W.J. Munro3,4,2, K. Nemoto2,1, 1.Sokendai (The Graduate Univ. for Advanced Studies) (Japan), 2.National Inst. of Informatics (Japan), 3.NTT Basic Res. Labs. (Japan), 4.NTT Res. Center for Theoretical Quantum Physics (Japan)

10:00 B-7-04Influence of Material Parameters on the Performance of Accumulation Mode DRAM○M.R. Ansari1, N. Navlakha1, J.T. Lin2, A. Kranti1, 1.Indian Institute of Technology Indore (India), 2.National Sun Yat-Sen University (Taiwan)

10:00 C-7-05Electrical characteristic of La2O3/Si MOSFETs with ferroelectric-type hysteresisS. Takagi1, ○K. Endo1, K. Kato1, M. Takenaka1, 1.Univ. of Tokyo (Japan)

10:00 D-7-04A RESURF Structure with Nano-trenches and Fins for AlGaN/GaN Devices○A. Zhang1, Q. Zhou1, C. Yang1, Y. Shi1, W. Chen1, Z. Li1, B. Zhang1, 1.Univ. of Electronic Sci. and Tech. of China (China)

10:00 E-7-03Molecular beam epitaxial growth and characterization of coherent α-Al2O3/Ga2O3 superlattices on r-plane sapphire○Y. Kato1, M. Imura2, Y. Nakayama2, M. Takeguchi2, E. Kobayashi3, K. Takahashi4, T. Oshima1, 1.Electrical and Electronic Engineering, Saga Univ. (Japan), 2.National Institute for Materials Science (Japan), 3.Kyushu Synchrotron Light Research Center (Japan), 4.Synchrotron Light Application Center, Saga Univ. (Japan)

10:00 F-7-02Fabrication and Photoelectrochemical Properties of Al-substituted α-Fe2O3 Photoelectrodes by Pulsed Laser Deposition○H. Zhou1, B. Zhang1, M. Seki1, H. Tabata1, 1.Univ. of Tokyo (Japan)

10:00 G-7-04Implementation of a Monolithic Three-Axis Accelerometer Using an Improved CMOS MEMS Process○S.-H. Tseng1, Y.-J. Wang1, C.-Y. Yeh1, H.-H. Tsai1, Y.-Z. Juang1, 1.National Chip Implementation Center (Taiwan)

10:00 J-7-03A Built-in Drift-field PD Based 4-tap Lock-in Pixel for Time-of-Flight CMOS Range Image Sensors○K. Kondo1, K. Yasutomi1, K. Yamada1, A. Komazawa1, Y. Handa1, Y. Okura1, T. Michiba1, S. Aoyama2, S. Kawahito1,2, 1.Shizuoka Univ. (Japan), 2.Brookman Technology Inc. (Japan)

10:00 K-7-04Super-Nernstian Sensitivity of CeTixOy Sensing Film for pH Detection in BiofluidT.M. Pan1, ○Y.C. Chou1, J.L. Her1, K. Koyama2, 1.Chang Gung University (Taiwan), 2.Kagoshima University (Japan)

10:00 M-7-05High Performance Monolithic Complementary Integrated Circuits Based on 2D Black Phosphorus/HfO2 Heterostructure○L. Chen1, S. Li1, X. Feng1, L. Wang1, X. Huang1, B.C.K. Tee1, K.W. Ang1, 1.National University of Singapore (Singapore)

10:00 N-7-05The Inverted-Staggered InGaZnO TFT with Hydrogen-Free PECVD-SiO2 Etch-Stopper and Passivation Layers○T. Kobayashi1, H. Zama1, 1.ULVAC, Inc. (Japan)

10:15 A-7-05Hybridization: A tool to engineer and probe novel quantum metamaterials ○W. Munro1,2,4, A. Angerer3, S. Putz3, T. Astner3, J. Schmiedmayer3, J. Majer4,3, K. Nemoto4, 1.NTT Basic Research Labs. (Japan), 2.Research Center for Theoretical Quantum Physics, NTT Corporation (Japan), 3.Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien (Austria), 4.National Institute of Informatics (Japan)

10:15 B-7-05Vertical Double-Gate 1T DRAM with an Asymmetric Oxide Barrier for Significant Enhancement of Data Retention○J.Y. Lee1, J. Ha2, I.H. Cho2, S. Cho1, 1.Gachon University (Korea), 2.Myongji University (Korea)

10:15 C-7-06Mitigating Edge Effects In Gate-Normal Tunneling Feld-Effect Transistors Using a Ti/TiN Dual-Metal GateS. Glass1, ○M. Liu1, K. Kato2, J.-M. Hartmann3, S. Takagi2, D. Buca1, S. Mantl1, Q.-T. Zhao1, 1.Res. Center Juelich (Germany), 2.Univ. of Tokyo (Japan), 3.Univ. of Grenoble and CEA, LETI (France)

10:15 D-7-05100V to 1800V High Performance p-GaN HEMT Epitaxial Layers and E-mode Power Devices on 8-inch Commercial QST® Substrates ○C. Basceri1, V. Odnoblyudov1, O. Aktas1, S. Farrens1, 1.Qromis, Inc. (USA)

10:15 E-7-04Control of Defect Formation in 4H-SiC Films Using Surface C/Si Ratio by High Speed Wafer Rotation Vertical CVD○Y. Daigo1, S. Ishii1, T. Kobayashi1, 1.Nuflare Technology, Inc (Japan)

10:15 F-7-03 (Late News)Withdrawn

10:15 G-7-05Vacuum-Packaged Resonant Microsensor for Photoacoustic Detection of Glucose in a Gelatin-based Tissue Model○I. Latif1, Z. An1, M. Toda1, T. Ono1, 1.Tohoku University (Japan)

10:15 J-7-04New integration technology of optical waveguides and photodiodes with CMOS operational amplifiers○T. Uruma1, T. Tabei1, Y. Amemiya1, T. Sato1, S. Yamada1, K. Okada1, S. Yokoyama1, 1.Hiroshima University (Japan)

10:15 K-7-05New Glass-less pH Sensing System Using Diamond Electrolyte Solution Gate FETs (SGFETs) and Vessel Gate○Y. Iyama1, S. Falina1, Y. Shintani1, H. Kawarada1,2, 1.Waseda University (Japan), 2.The Kagami Memorial Laboratory for Materials Science and Techonology (Japan)

10:15 M-7-06High-k Er2O3 top gate deposition on 2D channel at room temperature by PO2 controlled thermal evaporation○K. Maruyama1, K. Nagashio1, 1.Univ. of Tokyo (Japan)

10:30 A-7-06Qubit-resonator coupling system for quantum annealing○A. Tomonaga1, H. Mukai1, Y. Zhou2, R. Wang1, Y. Nakajima1, J.S. Tsai1,2, 1.Dept. of Phys., Tokyo Univ. of Sci. (Japan), 2.CEMS, RIKEN (Japan)

10:30 B-7-06 (Late News)First Implementation of MONOS Flash Memory in SOTB-CMOS○K. Maekawa1, H. Makiyama1, Y. Yamamoto1, Y. Omizu1, H. Yamakoshi1, K. Sonoda1, H. Yanagita1, H. Shinkawata1, T. Hashimoto1, Yasuo Yamaguchi1, Tomohiro Yamashita1, 1.Renesas Electronics Corp. (Japan)

10:30 C-7-07Demonstration of Ge Complementary Tunneling Field-Effect Transistors with Dopant Segregation NiGe Source/Drain○J. Li1, Y. Qu1, S. Zeng1, Y. Zhang1, R. Cheng1, R. Zhang1, Y. Zhao1, 1.Zhejiang Univ. (China)

10:30 D-7-06Investigation of the Si3N4/(Al)GaN interface properties in LPCVD Si3N4/AlGaN/GaN MIS-HEMT with Post Deposition Annealing○H. Sun1, M. Wang1, J. Chen2, D. Chen1, 1.Peking University (China), 2.Founder Microelectronics International Co., Ltd. (China)

10:30 E-7-05Crystal Growth of MnS buffer layer for non-polar AlN on Si (100) deposited by RF-magnetron sputtering ○K. Tatejima1,2, T. Nagata2, K. Ishibashi3,2, K. Takahashi3,2, S. Suzuki3, A. Ogura1, T. Chikyow2,4, 1.Meiji Univ. (Japan), 2.MANA, NIMS (Japan), 3.COMET Inc. (Japan), 4.MaDIS, NIMS (Japan)

10:30 F-7-04 (Late News)High Voltage Bifacial Amorphous Si Quintuple-Junction Solar Cells for IoT Devices○M. Konagai1, R. Sasaki1, 1.Tokyo City Univ. (Japan)

10:30 G-7-06 (Late News)Fabrication and Evaluation of Aluminum Nitride/MOSFET Based Strain Sensor with High Gauge Factor○M. Zhu1, N. Inomata1, N. Adachi2, A. Sakurai2, M. Nomura2, T. Ono1, 1.Tohoku Univ. (Japan), 2.Murata Manufac. Co., Ltd. (Japan)

10:30 J-7-05CMOS terahertz imaging pixel with a VCO-based ADC○S. Yokoyama1, Y. Kanazawa1, T. Ikegami1, S. Hiramatsu2, E. Sano1, Y. Takida3, H. Minamide3, M. Ikebe1, 1.Hokkaido University (Japan), 2.Sony Semiconductor Solutions (Japan), 3.RIKEN (Japan)

10:30 K-7-06Nb2O5 Sensing Membrane in Extended Gate Field Effect Transistor Biosensor With Post Rapid Thermal Annealing○T. Chakraborty1, L.T. Kuo1, C.H. Kao1, M. Das1, C.F. Lin1, 1.Chang Gung University (Taiwan)

10:45 K-7-07 (Late News)Ferroelectric Characteristics Enhancement of P(VDF-TrFE) Capacitors with Modified Solvent Vapor Annealing Process○Y.P. Jiang1, T.C. Yang1, S.H. Chan2, M.C. Wu2, J.C. Wang1,3,4, 1.Department of Electronic Engineering, Univ. of Chang Gung. (Taiwan), 2.Department of f Chemical and Materials Engineering, Univ. of Chang Gung. (Taiwan), 3.Department of Neurosurgery, Chang Gung Memorial Hospital. (Taiwan), 4.Department of Electronic Engineering, Univ. of Tech. of Ming Chi. (Taiwan)

Thursday, September 13

Room 211 Room 212 Room 213 Room 221 Room 222 Room 223 Room 231 Room 233 Room 241 Room 243 Room 244 Room 246Area 9:Novel Function & SpintronicsA-7:Quantum Computational Devices

Area 2:MemoryB-7:Flash and 1T-DRAM

Area 1:Advanced CMOSC-7:Ferroelectric and Tunnel FET II

Area 4:Power & High-speedD-7:GaN Device Technologies II

Area 11:Growth & CharacterizationE-7:Advanced Growth of Widegap Semiconductors

Area 6:EnergyF-7:Photoctalayst/Solar Cells

Area 3:InterconnectG-7:MEMS Application

Area 5 & SpecialJ-7:LiDAR and Imaging Applications

Area 7:Organic & BioK-7:Chemical and Gas Sensors

Area 8:Low DM-7:2D Materials & Devices II

Area 10:Thin FilmN-7:Advanced IGZO Processes and Devices

10:00 A-7-04Optical Control of the Silicon–Vacancy Center in Diamond○M. Hanks1,2, W.J. Munro3,4,2, K. Nemoto2,1, 1.Sokendai (The Graduate Univ. for Advanced Studies) (Japan), 2.National Inst. of Informatics (Japan), 3.NTT Basic Res. Labs. (Japan), 4.NTT Res. Center for Theoretical Quantum Physics (Japan)

10:00 B-7-04Influence of Material Parameters on the Performance of Accumulation Mode DRAM○M.R. Ansari1, N. Navlakha1, J.T. Lin2, A. Kranti1, 1.Indian Institute of Technology Indore (India), 2.National Sun Yat-Sen University (Taiwan)

10:00 C-7-05Electrical characteristic of La2O3/Si MOSFETs with ferroelectric-type hysteresisS. Takagi1, ○K. Endo1, K. Kato1, M. Takenaka1, 1.Univ. of Tokyo (Japan)

10:00 D-7-04A RESURF Structure with Nano-trenches and Fins for AlGaN/GaN Devices○A. Zhang1, Q. Zhou1, C. Yang1, Y. Shi1, W. Chen1, Z. Li1, B. Zhang1, 1.Univ. of Electronic Sci. and Tech. of China (China)

10:00 E-7-03Molecular beam epitaxial growth and characterization of coherent α-Al2O3/Ga2O3 superlattices on r-plane sapphire○Y. Kato1, M. Imura2, Y. Nakayama2, M. Takeguchi2, E. Kobayashi3, K. Takahashi4, T. Oshima1, 1.Electrical and Electronic Engineering, Saga Univ. (Japan), 2.National Institute for Materials Science (Japan), 3.Kyushu Synchrotron Light Research Center (Japan), 4.Synchrotron Light Application Center, Saga Univ. (Japan)

10:00 F-7-02Fabrication and Photoelectrochemical Properties of Al-substituted α-Fe2O3 Photoelectrodes by Pulsed Laser Deposition○H. Zhou1, B. Zhang1, M. Seki1, H. Tabata1, 1.Univ. of Tokyo (Japan)

10:00 G-7-04Implementation of a Monolithic Three-Axis Accelerometer Using an Improved CMOS MEMS Process○S.-H. Tseng1, Y.-J. Wang1, C.-Y. Yeh1, H.-H. Tsai1, Y.-Z. Juang1, 1.National Chip Implementation Center (Taiwan)

10:00 J-7-03A Built-in Drift-field PD Based 4-tap Lock-in Pixel for Time-of-Flight CMOS Range Image Sensors○K. Kondo1, K. Yasutomi1, K. Yamada1, A. Komazawa1, Y. Handa1, Y. Okura1, T. Michiba1, S. Aoyama2, S. Kawahito1,2, 1.Shizuoka Univ. (Japan), 2.Brookman Technology Inc. (Japan)

10:00 K-7-04Super-Nernstian Sensitivity of CeTixOy Sensing Film for pH Detection in BiofluidT.M. Pan1, ○Y.C. Chou1, J.L. Her1, K. Koyama2, 1.Chang Gung University (Taiwan), 2.Kagoshima University (Japan)

10:00 M-7-05High Performance Monolithic Complementary Integrated Circuits Based on 2D Black Phosphorus/HfO2 Heterostructure○L. Chen1, S. Li1, X. Feng1, L. Wang1, X. Huang1, B.C.K. Tee1, K.W. Ang1, 1.National University of Singapore (Singapore)

10:00 N-7-05The Inverted-Staggered InGaZnO TFT with Hydrogen-Free PECVD-SiO2 Etch-Stopper and Passivation Layers○T. Kobayashi1, H. Zama1, 1.ULVAC, Inc. (Japan)

10:15 A-7-05Hybridization: A tool to engineer and probe novel quantum metamaterials ○W. Munro1,2,4, A. Angerer3, S. Putz3, T. Astner3, J. Schmiedmayer3, J. Majer4,3, K. Nemoto4, 1.NTT Basic Research Labs. (Japan), 2.Research Center for Theoretical Quantum Physics, NTT Corporation (Japan), 3.Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien (Austria), 4.National Institute of Informatics (Japan)

10:15 B-7-05Vertical Double-Gate 1T DRAM with an Asymmetric Oxide Barrier for Significant Enhancement of Data Retention○J.Y. Lee1, J. Ha2, I.H. Cho2, S. Cho1, 1.Gachon University (Korea), 2.Myongji University (Korea)

10:15 C-7-06Mitigating Edge Effects In Gate-Normal Tunneling Feld-Effect Transistors Using a Ti/TiN Dual-Metal GateS. Glass1, ○M. Liu1, K. Kato2, J.-M. Hartmann3, S. Takagi2, D. Buca1, S. Mantl1, Q.-T. Zhao1, 1.Res. Center Juelich (Germany), 2.Univ. of Tokyo (Japan), 3.Univ. of Grenoble and CEA, LETI (France)

10:15 D-7-05100V to 1800V High Performance p-GaN HEMT Epitaxial Layers and E-mode Power Devices on 8-inch Commercial QST® Substrates ○C. Basceri1, V. Odnoblyudov1, O. Aktas1, S. Farrens1, 1.Qromis, Inc. (USA)

10:15 E-7-04Control of Defect Formation in 4H-SiC Films Using Surface C/Si Ratio by High Speed Wafer Rotation Vertical CVD○Y. Daigo1, S. Ishii1, T. Kobayashi1, 1.Nuflare Technology, Inc (Japan)

10:15 F-7-03 (Late News)Withdrawn

10:15 G-7-05Vacuum-Packaged Resonant Microsensor for Photoacoustic Detection of Glucose in a Gelatin-based Tissue Model○I. Latif1, Z. An1, M. Toda1, T. Ono1, 1.Tohoku University (Japan)

10:15 J-7-04New integration technology of optical waveguides and photodiodes with CMOS operational amplifiers○T. Uruma1, T. Tabei1, Y. Amemiya1, T. Sato1, S. Yamada1, K. Okada1, S. Yokoyama1, 1.Hiroshima University (Japan)

10:15 K-7-05New Glass-less pH Sensing System Using Diamond Electrolyte Solution Gate FETs (SGFETs) and Vessel Gate○Y. Iyama1, S. Falina1, Y. Shintani1, H. Kawarada1,2, 1.Waseda University (Japan), 2.The Kagami Memorial Laboratory for Materials Science and Techonology (Japan)

10:15 M-7-06High-k Er2O3 top gate deposition on 2D channel at room temperature by PO2 controlled thermal evaporation○K. Maruyama1, K. Nagashio1, 1.Univ. of Tokyo (Japan)

10:30 A-7-06Qubit-resonator coupling system for quantum annealing○A. Tomonaga1, H. Mukai1, Y. Zhou2, R. Wang1, Y. Nakajima1, J.S. Tsai1,2, 1.Dept. of Phys., Tokyo Univ. of Sci. (Japan), 2.CEMS, RIKEN (Japan)

10:30 B-7-06 (Late News)First Implementation of MONOS Flash Memory in SOTB-CMOS○K. Maekawa1, H. Makiyama1, Y. Yamamoto1, Y. Omizu1, H. Yamakoshi1, K. Sonoda1, H. Yanagita1, H. Shinkawata1, T. Hashimoto1, Yasuo Yamaguchi1, Tomohiro Yamashita1, 1.Renesas Electronics Corp. (Japan)

10:30 C-7-07Demonstration of Ge Complementary Tunneling Field-Effect Transistors with Dopant Segregation NiGe Source/Drain○J. Li1, Y. Qu1, S. Zeng1, Y. Zhang1, R. Cheng1, R. Zhang1, Y. Zhao1, 1.Zhejiang Univ. (China)

10:30 D-7-06Investigation of the Si3N4/(Al)GaN interface properties in LPCVD Si3N4/AlGaN/GaN MIS-HEMT with Post Deposition Annealing○H. Sun1, M. Wang1, J. Chen2, D. Chen1, 1.Peking University (China), 2.Founder Microelectronics International Co., Ltd. (China)

10:30 E-7-05Crystal Growth of MnS buffer layer for non-polar AlN on Si (100) deposited by RF-magnetron sputtering ○K. Tatejima1,2, T. Nagata2, K. Ishibashi3,2, K. Takahashi3,2, S. Suzuki3, A. Ogura1, T. Chikyow2,4, 1.Meiji Univ. (Japan), 2.MANA, NIMS (Japan), 3.COMET Inc. (Japan), 4.MaDIS, NIMS (Japan)

10:30 F-7-04 (Late News)High Voltage Bifacial Amorphous Si Quintuple-Junction Solar Cells for IoT Devices○M. Konagai1, R. Sasaki1, 1.Tokyo City Univ. (Japan)

10:30 G-7-06 (Late News)Fabrication and Evaluation of Aluminum Nitride/MOSFET Based Strain Sensor with High Gauge Factor○M. Zhu1, N. Inomata1, N. Adachi2, A. Sakurai2, M. Nomura2, T. Ono1, 1.Tohoku Univ. (Japan), 2.Murata Manufac. Co., Ltd. (Japan)

10:30 J-7-05CMOS terahertz imaging pixel with a VCO-based ADC○S. Yokoyama1, Y. Kanazawa1, T. Ikegami1, S. Hiramatsu2, E. Sano1, Y. Takida3, H. Minamide3, M. Ikebe1, 1.Hokkaido University (Japan), 2.Sony Semiconductor Solutions (Japan), 3.RIKEN (Japan)

10:30 K-7-06Nb2O5 Sensing Membrane in Extended Gate Field Effect Transistor Biosensor With Post Rapid Thermal Annealing○T. Chakraborty1, L.T. Kuo1, C.H. Kao1, M. Das1, C.F. Lin1, 1.Chang Gung University (Taiwan)

10:45 K-7-07 (Late News)Ferroelectric Characteristics Enhancement of P(VDF-TrFE) Capacitors with Modified Solvent Vapor Annealing Process○Y.P. Jiang1, T.C. Yang1, S.H. Chan2, M.C. Wu2, J.C. Wang1,3,4, 1.Department of Electronic Engineering, Univ. of Chang Gung. (Taiwan), 2.Department of f Chemical and Materials Engineering, Univ. of Chang Gung. (Taiwan), 3.Department of Neurosurgery, Chang Gung Memorial Hospital. (Taiwan), 4.Department of Electronic Engineering, Univ. of Tech. of Ming Chi. (Taiwan)

Thursday, September 13

Room 211 Room 212 Room 213 Room 221 Room 222 Room 223 Room 231 Room 233 Room 241 Room 243 Room 244 Room 246Area 9:Novel Function & SpintronicsA-8:Spin-Orbit Interaction

Area 1:Advanced CMOSC-8:Group III-V and Ge Technology

Area 4:Power & High-speedD-8:SiC Devices and Processes

Area 6 & 11F-8:Thermoelectric Materials

Area 5:PhotonicsH-8:Light Emitting Devices and Photodiodes

Area 1 & SpecialJ-8:Innovative Device Based Circuits III

Area 7:Organic & BioK-8:Molecular Materials and Devices

Area 10:Thin FilmN-8:Crystal Growth of Group IV and Related Materials II

(14:00-16:00)Session Chair: T. Ono (Kyoto Univ.), B.G. Park (KAIST)

(14:00-15:45)Session Chair: Y. Kamakura (Osaka Univ.), C. Lee (IBM Research)

(14:00-15:45)Session Chair: H. Fujiwara (Toyota Motor Corp.), N. Iwamuro (Univ. of Tsukuba)

(14:00-15:45)Session Chair: M. Ikegami (Toin Univ. of Yokohama), H. Tatsuoka (Shizuoka Univ.)

(14:00-15:30)Session Chair: S. Kuboya (Tohoku Univ.), N. Ozaki (Wakayama Univ.)

(14:00-16:00)Session Chair: H. Morioka (Socionext Inc.), H. Lin (National Chung Hsing Univ.)

(14:00-15:30)Session Chair: N. Clement (IIS / CNRS the Univ. of Tokyo), M. Nakamura (NAIST)

(14:00-15:15)Session Chair: K. Koga (Kyushu Univ.), S. Higashi (Hiroshima Univ.)

14:00 A-8-01Enhancement of Spin-orbit Torque by CoOx Layer Insertion into Co/Pt Interface○K. Hasegawa1, Y. Hibino1, M. Suzuki2, T. Koyama1, D. Chiba1, 1.Univ. of Tokyo (Japan), 2.JASRI (Japan)

14:00 C-8-01Fabrication of InAs-on-Insulator structures by Smart Cut method with hydrogen implantation at room temperature○K. Sumita1, K. Kato1, M. Takenaka1, S. Takagi1, 1.Univ. of Tokyo (Japan)

14:00 D-8-01A Superior 15-kV SiC MOSFET with Current Spreading Layer for High-Frequency Applications○H. Kitai1, T. Yamaguchi1, Y. Hozumi1, H. Shiomi1, K. Fukuda1, 1.AIST (Japan)

14:00 F-8-01Optimum substrate design of planar type Si nanowire thermoelectric generator○K. Shima1, M. Tomita1, H. Zhang1,2, T. Zhan1, T. Matsukawa3, T. Matsuki3, T. Watanabe1, 1.Waseda Univ. (Japan), 2.Gunma Univ. (Japan), 3.AIST (Japan)

14:00 H-8-01 (Invited)High Performance III-nitride Photodetectors Using Nanoplasmonic Effects○D. Li1, X. Sun1, Y. Jia1, Z. Shi1, Y. Wu1, 1.Chinese Academy of Sci. (China)

14:00 J-8-01 (Invited)TBC○N. Shukla1, 1.Univ. of Virginia (USA)

14:00 K-8-01 (Invited)Predictive Modelling of Supramolecular Assemblies○D. Thompson1, 1.Univ. of Limerick (Ireland)

14:00 N-8-01 (Invited)Development of GeSn-related group-IV thin films for designing of energy band structure○O. Nakatsuka1, M. Kurosawa1, W. Takeuchi1,2, M. Sakashita1, S. Zaima1, 1.Nagoya Univ. (Japan), 2.Aichi Inst. Tech. (Japan)

14:15 A-8-02Observation of Spin-orbit torque generated by interface-generated spin current in a Py/Pt/Co system○Y. Hibino1, T. Koyama1, D. Chiba1, 1.Univ. of Tokyo (Japan)

14:15 C-8-02In-situ Plasma Conditioning of InGaAs / High-κ Interface Layers for Defect Density Control Compatible with Scalable FinFET Integration○J. Rozen1, Y. Ogawa2, M. Hatanaka2, T. Ando1, E. Cartier1, M.M. Frank1, M. Hopstaken1, J. Bruley1, K.-T. Lee1, J.-B. Yau1, Y. Sun1, R.L. Bruce1, C. D'Emic1, X. Sun1, K. Suu2, R.T. Mo1, E. Leobandung1, V. Narayanan1, 1.IBM Research (USA), 2.Ulvac, Inc. (Japan)

14:15 D-8-02Double RESURF JTEs Structure for Low On-Resistance Trench Gate SiC MOSFET○Y. Saitoh1, T. Masuda1, H. Michikoshi1, H. Shiomi1, S. Harada1, Y. Mikamura2, 1.AIST (Japan), 2.Sumitomo Electric Industries, Ltd. (Japan)

14:15 F-8-02Enhancement of Uni-leg Si Thermoelectric Generator Performance by Phononic Crystal Nanostructures○R. Yanagisawa1, M. Nomura1,2, 1.Inst. of Indus. Sci., Univ. of Tokyo (Japan), 2.JST PRESTO (Japan)

14:30 A-8-03Enhancement of spin orbit interaction in nitrogen doped Cu thin films○R. Enoki1, H. Gamou1, S. Karube1,2, M. Kohda1,2, Y. Kunihashi3, H. Sanada3, J. Nitta1,2, 1.Tohoku Univ. (Japan), 2.CSRN Tohoku Univ. (Japan), 3.NTT-BRL (Japan)

14:30 C-8-03Suppression of Band-to-Band Tunneling in III-V MOSFETs on Silicon Using Source and Drain Spacers○C.B. Zota1, C. Convertino1, D. Caimi1, L. Czornomaz1, 1.IBM Research Zurich (Switzerland)

14:30 D-8-03Low-temperature, high-concentration laser doping of nitrogen to 4H-SiC for low-contact-resistance fabrication○T. Kikuchi1,2, K. Imokawa1,2, A. Ikeda3, D. Nakamura1, T. Asano1, H. Ikenoue1,2, 1.Grad. Sch. of ISEE, Kyushu Univ. (Japan), 2.Dept. of Gigaphoton Next GLP, Kyushu Univ. (Japan), 3.Dept. of Computer and Info. Sci., Sojo Univ. (Japan)

14:30 F-8-03Demonstration of a Silicon Thin Film, Phonon Engineered Thermoelectric Converter○T.-M. Bah1,2, S. Didenko2, S. Monfray1, T. Skotnicki1, F. Boeuf1, E. Dubois2, J.-F. Robillard2, 1.STMicroelectronics (France), 2.Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. (France)

14:30 H-8-02AlGaN/GaN HEMT with Built-in Light Emitter○C.-Y. Chang1, Y.-C. Li1, C.-F. Huang1, 1.National Tsing Hua University (Taiwan)

14:30 J-8-02 (Invited)Emerging Memory Based Circuits for Beyond von Neumann Applications: Nonvolatile-Logic and Computing-in-MemoryC. Dou1, W.-H. Chen1, C.-X. Xue1, J.-W. Su2, S.-H. Li2, P.-C. Chen3, H. Wu4, H. Qian4, ○M.-F. Chang1, 1.National Tsing Hua Univ. (Taiwan), 2.Indus. Tech. Res. Inst. (Taiwan), 3.I Shou Univ. (Taiwan), 4.Tsinghua Univ. (China)

14:30 K-8-02Search of new Nitrogen-doped carbon materials by compressing molecular crystals○I. Yamane1, T. Yanase1, T. Nagahama1, T. Shimada1, 1.Hokkaido Univ. (Japan)

14:30 N-8-02Electrical properties of large-grained SiGe on an insulator formed by advanced solid-phase crystallization○D. Takahara1, T. Suemasu1, K. Toko1, 1.University of Tsukuba (Japan)

14:45 A-8-04Observation of Spin-Orbit Torque Induced Magnetization Switching in Gd-Fe Perpendicular Magnetized Wire with In-Plane Exchange Bias Field○M. Wakae1, Y. Kurokawa1, H. Yuasa1, 1.Kyushu Univ. (Japan)

14:45 C-8-04Low Resistance III-V Heterocontacts to N-Ge○J. Suh1, P. Ramesh1, A.C. Meng1, A. Kumar1, A. Kumar1, S. Gupta1, R. Islam1, P. McIntyre1, K. Saraswat1, 1.Stanford University (USA)

14:45 D-8-04Investigation of grinding or mechanical polishing surface of 4H-SiC substrate○R. Hiraide1, T. Okamoto2, M. Haraguchi2, 1.Kemet Japan CO.,LTD. (Japan), 2.FRC, Tokushima Univ. (Japan)

14:45 F-8-04Substrate Heat Resistance Engineering for Realizing High Performance Si Nanowires Thermoelectric Generator○M. Tomita1, T. Kumada1, K. Shima1, T. Zhan1, H. Zhang1,2, T. Matsukawa3, T. Matsuki1,3, T. Watanabe1, 1.Waseda Univ. (Japan), 2.Gunma Univ. (Japan), 3.AIST (Japan)

14:45 H-8-03Increasing Color-Conversion by Novel Hybrid Micro Light-Emitting Diodes with Non-Radiative Energy Transfer Effect○S.W. Huang Chen1, Z.Y. Liao1, L.F. Chen1, T.N. Lin2, P.T. Lee1, A.J. Tzou1,3, H.C. Kuo1, 1.National Chiao Tung Univ. (Taiwan), 2.Chung Yuan Christian Univ. (Taiwan), 3.National Nano Device Labs (Taiwan)

14:45 K-8-03Synthesis of N-doped Polyacenes and Single Crystal Growth by Flux Evaporation Method○N. Sakai1, T. Yanase1, T. Nagahama1, T. Shimada1, 1.Hokkaido Univ. (Japan)

14:45 N-8-03Epitaxial Thickening of a Large-grained Ge Layer on Glass for Solar Cell Applications○T. Nishida1, T. Suemasu1, K. Toko1, 1.Univ. of Tsukuba (Japan)

15:00 A-8-05Giant field-like torque observed in a Py/W/Pt trilayer system○S. Karube1,2, N. Tezuka1, M. Kohda1,2, M. Matsuura1, S. Sugimoto1, J. Nitta1,2, 1.DepaNational Institute of Informatics, Tohoku Univ. (Japan), 2.Center for Spintronics Research Network, Tohoku Univ. (Japan)

15:00 C-8-05High Performance Ge pMOSFET with Nitrided Gate Dielectrics and Microwave Annealing○C.Y. Kao1, S.H. Yi1, C.W. Hsu1, W.F. Chi1, T.M. Li1, K.S. Chang-Liao1, 1.National Tsing Hua University (Taiwan)

15:00 D-8-05Stress at Interface of SiO2/4H-SiC Studied by Confocal Raman Microscopy○W. Fu1, A. Kobayashi1, H. Yano1, S. Harada2, T. Sakurai1, 1.Univ. of Tsukuba (Japan), 2.AIST (Japan)

15:00 F-8-05Realization of High Performance and Flexibility Thermoelectric Module via Hybrid Carbon-Based Materials and Bi2Te3 Alloy○H.J. You1, K.H. Chen1,2, L.C. Chen2, T.R. Yang3, 1.Inst. of Atomic and Molecular Sciences, Academia Sinica (Taiwan), 2.Center for Condensed Matter Sciences, National Taiwan Univ. (Taiwan), 3.Department of Physics, National Taiwan Normal Univ. (Taiwan)

15:00 H-8-04Study of minority-electron transport through atomic-diffusion-bonding InGaAs/a-Ge/InGaAs interface using photodiode structures○Y. Yamada1, M. Nada1, M. Uomoto2, T. Shimatsu2, F. Nakajima1, T. Hoshi1, H. Matsuzaki1, 1.NTT Device Technology Labs, NTT Corporation (Japan), 2.Tohoku Univ. (Japan)

15:00 J-8-03 (Invited)Evaluation of Negative Capacitance Ferroelectric Field-Effect Transistors For Low Power Circuit Applications○X. Gong1, Y. Li1, E.Y.J. Kong1, Y. Kang1, K. Han1, 1.National Univ. of Singapore (Singapore)

15:00 K-8-04Dependence of Substrate Work Function on the Energy-Level Alignment at Organic-Organic Heterojunction Interface○A.L. Foggiatto1, H. Suga2, Y. Takeichi3, K. Ono3, Y. Takahashi4, T. Ueba5, S. Kera5, T. Sakurai1, 1.Univ. of Tsukuba (Japan), 2.Hiroshima Univ. (Japan), 3.High Energy Accelerator Res. Organization (KEK) (Japan), 4.Univ. of Tokyo (Japan), 5.Inst. for Molecular Science (Japan)

15:00 N-8-04Ultra-High-Speed Crystallization of Amorphous Silicon Films on Flexible Glass Substrate by Thermal-Plasma-Jet Irradiation Using Cylindrical Rotation Stage○W. Nakano1, H. Hanafusa1, S. Higashi1, 1.Hiroshima Univ. (Japan)

15:15 A-8-06Angle dependent spin-orbit interaction in a physically defined silicon double quan-tum dot○M. Marx1,2, J. Yoneda2, T. Otsuka2, K. Takeda2, Y. Yamaoka3, T. Nakajima2, S. Li2, A. Noiri2, T. Kodera3, S. Tarucha1,2, 1.Univ. of Tokyo (Japan), 2.RIKEN (Japan), 3.Tokyo Tech (Japan)

15:15 C-8-06Electron and Acoustic Phonon Confinement in Ultrathin-Body Ge on Insulator○V. Poborchii1, W.H. Chang1, H. Ishii1, N. Uchida1, J. Groenen2, P. Geshev3, T. Irisawa1, T. Maeda1, 1.AIST (Japan), 2.CEMES-CNRS and Universite de Toulouse, (France), 3.Institute of Thermophysics of the Russian Academy of Sciences (Russia)

15:15 D-8-06Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application○K. Yamamoto1, D. Wang1, H. Nakashima1, S. Hishiki2, K. Kawamura2,1, 1.Kyushu University (Japan), 2.Air Water Inc. (Japan)

15:15 F-8-06Flexible thermoelectric SiGe films formed by Al-induced layer exchange○K. Kusano1, A. Yamamoto2, T. Suemasu1, K. Toko1,3, 1.Univ. of Tsukuba (Japan), 2.AIST (Japan), 3.JST PRESTO (Japan)

15:15 H-8-05 (Late News)Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate○T. Maekura1, T. Goto1, K. Nakae1, K. Yamamoto1, H. Nakashima2, D. Wang1, 1.IGSES, Univ. of Kyushu (Japan), 2.GIC, Univ. of Kyushu (Japan)

15:15 K-8-05 (Late News)Growth Mechanism and Electrical Characterization of DPh-DNTT Films Prepared by Vacuum Deposition○Y. Hattori1, Y. Kimura1, T. Yoshioka1, M. Kitamura1, 1.Kobe Univ. (Japan)

Thursday, September 13

Room 211 Room 212 Room 213 Room 221 Room 222 Room 223 Room 231 Room 233 Room 241 Room 243 Room 244 Room 246Area 9:Novel Function & SpintronicsA-8:Spin-Orbit Interaction

Area 1:Advanced CMOSC-8:Group III-V and Ge Technology

Area 4:Power & High-speedD-8:SiC Devices and Processes

Area 6 & 11F-8:Thermoelectric Materials

Area 5:PhotonicsH-8:Light Emitting Devices and Photodiodes

Area 1 & SpecialJ-8:Innovative Device Based Circuits III

Area 7:Organic & BioK-8:Molecular Materials and Devices

Area 10:Thin FilmN-8:Crystal Growth of Group IV and Related Materials II

(14:00-16:00)Session Chair: T. Ono (Kyoto Univ.), B.G. Park (KAIST)

(14:00-15:45)Session Chair: Y. Kamakura (Osaka Univ.), C. Lee (IBM Research)

(14:00-15:45)Session Chair: H. Fujiwara (Toyota Motor Corp.), N. Iwamuro (Univ. of Tsukuba)

(14:00-15:45)Session Chair: M. Ikegami (Toin Univ. of Yokohama), H. Tatsuoka (Shizuoka Univ.)

(14:00-15:30)Session Chair: S. Kuboya (Tohoku Univ.), N. Ozaki (Wakayama Univ.)

(14:00-16:00)Session Chair: H. Morioka (Socionext Inc.), H. Lin (National Chung Hsing Univ.)

(14:00-15:30)Session Chair: N. Clement (IIS / CNRS the Univ. of Tokyo), M. Nakamura (NAIST)

(14:00-15:15)Session Chair: K. Koga (Kyushu Univ.), S. Higashi (Hiroshima Univ.)

14:00 A-8-01Enhancement of Spin-orbit Torque by CoOx Layer Insertion into Co/Pt Interface○K. Hasegawa1, Y. Hibino1, M. Suzuki2, T. Koyama1, D. Chiba1, 1.Univ. of Tokyo (Japan), 2.JASRI (Japan)

14:00 C-8-01Fabrication of InAs-on-Insulator structures by Smart Cut method with hydrogen implantation at room temperature○K. Sumita1, K. Kato1, M. Takenaka1, S. Takagi1, 1.Univ. of Tokyo (Japan)

14:00 D-8-01A Superior 15-kV SiC MOSFET with Current Spreading Layer for High-Frequency Applications○H. Kitai1, T. Yamaguchi1, Y. Hozumi1, H. Shiomi1, K. Fukuda1, 1.AIST (Japan)

14:00 F-8-01Optimum substrate design of planar type Si nanowire thermoelectric generator○K. Shima1, M. Tomita1, H. Zhang1,2, T. Zhan1, T. Matsukawa3, T. Matsuki3, T. Watanabe1, 1.Waseda Univ. (Japan), 2.Gunma Univ. (Japan), 3.AIST (Japan)

14:00 H-8-01 (Invited)High Performance III-nitride Photodetectors Using Nanoplasmonic Effects○D. Li1, X. Sun1, Y. Jia1, Z. Shi1, Y. Wu1, 1.Chinese Academy of Sci. (China)

14:00 J-8-01 (Invited)TBC○N. Shukla1, 1.Univ. of Virginia (USA)

14:00 K-8-01 (Invited)Predictive Modelling of Supramolecular Assemblies○D. Thompson1, 1.Univ. of Limerick (Ireland)

14:00 N-8-01 (Invited)Development of GeSn-related group-IV thin films for designing of energy band structure○O. Nakatsuka1, M. Kurosawa1, W. Takeuchi1,2, M. Sakashita1, S. Zaima1, 1.Nagoya Univ. (Japan), 2.Aichi Inst. Tech. (Japan)

14:15 A-8-02Observation of Spin-orbit torque generated by interface-generated spin current in a Py/Pt/Co system○Y. Hibino1, T. Koyama1, D. Chiba1, 1.Univ. of Tokyo (Japan)

14:15 C-8-02In-situ Plasma Conditioning of InGaAs / High-κ Interface Layers for Defect Density Control Compatible with Scalable FinFET Integration○J. Rozen1, Y. Ogawa2, M. Hatanaka2, T. Ando1, E. Cartier1, M.M. Frank1, M. Hopstaken1, J. Bruley1, K.-T. Lee1, J.-B. Yau1, Y. Sun1, R.L. Bruce1, C. D'Emic1, X. Sun1, K. Suu2, R.T. Mo1, E. Leobandung1, V. Narayanan1, 1.IBM Research (USA), 2.Ulvac, Inc. (Japan)

14:15 D-8-02Double RESURF JTEs Structure for Low On-Resistance Trench Gate SiC MOSFET○Y. Saitoh1, T. Masuda1, H. Michikoshi1, H. Shiomi1, S. Harada1, Y. Mikamura2, 1.AIST (Japan), 2.Sumitomo Electric Industries, Ltd. (Japan)

14:15 F-8-02Enhancement of Uni-leg Si Thermoelectric Generator Performance by Phononic Crystal Nanostructures○R. Yanagisawa1, M. Nomura1,2, 1.Inst. of Indus. Sci., Univ. of Tokyo (Japan), 2.JST PRESTO (Japan)

14:30 A-8-03Enhancement of spin orbit interaction in nitrogen doped Cu thin films○R. Enoki1, H. Gamou1, S. Karube1,2, M. Kohda1,2, Y. Kunihashi3, H. Sanada3, J. Nitta1,2, 1.Tohoku Univ. (Japan), 2.CSRN Tohoku Univ. (Japan), 3.NTT-BRL (Japan)

14:30 C-8-03Suppression of Band-to-Band Tunneling in III-V MOSFETs on Silicon Using Source and Drain Spacers○C.B. Zota1, C. Convertino1, D. Caimi1, L. Czornomaz1, 1.IBM Research Zurich (Switzerland)

14:30 D-8-03Low-temperature, high-concentration laser doping of nitrogen to 4H-SiC for low-contact-resistance fabrication○T. Kikuchi1,2, K. Imokawa1,2, A. Ikeda3, D. Nakamura1, T. Asano1, H. Ikenoue1,2, 1.Grad. Sch. of ISEE, Kyushu Univ. (Japan), 2.Dept. of Gigaphoton Next GLP, Kyushu Univ. (Japan), 3.Dept. of Computer and Info. Sci., Sojo Univ. (Japan)

14:30 F-8-03Demonstration of a Silicon Thin Film, Phonon Engineered Thermoelectric Converter○T.-M. Bah1,2, S. Didenko2, S. Monfray1, T. Skotnicki1, F. Boeuf1, E. Dubois2, J.-F. Robillard2, 1.STMicroelectronics (France), 2.Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. (France)

14:30 H-8-02AlGaN/GaN HEMT with Built-in Light Emitter○C.-Y. Chang1, Y.-C. Li1, C.-F. Huang1, 1.National Tsing Hua University (Taiwan)

14:30 J-8-02 (Invited)Emerging Memory Based Circuits for Beyond von Neumann Applications: Nonvolatile-Logic and Computing-in-MemoryC. Dou1, W.-H. Chen1, C.-X. Xue1, J.-W. Su2, S.-H. Li2, P.-C. Chen3, H. Wu4, H. Qian4, ○M.-F. Chang1, 1.National Tsing Hua Univ. (Taiwan), 2.Indus. Tech. Res. Inst. (Taiwan), 3.I Shou Univ. (Taiwan), 4.Tsinghua Univ. (China)

14:30 K-8-02Search of new Nitrogen-doped carbon materials by compressing molecular crystals○I. Yamane1, T. Yanase1, T. Nagahama1, T. Shimada1, 1.Hokkaido Univ. (Japan)

14:30 N-8-02Electrical properties of large-grained SiGe on an insulator formed by advanced solid-phase crystallization○D. Takahara1, T. Suemasu1, K. Toko1, 1.University of Tsukuba (Japan)

14:45 A-8-04Observation of Spin-Orbit Torque Induced Magnetization Switching in Gd-Fe Perpendicular Magnetized Wire with In-Plane Exchange Bias Field○M. Wakae1, Y. Kurokawa1, H. Yuasa1, 1.Kyushu Univ. (Japan)

14:45 C-8-04Low Resistance III-V Heterocontacts to N-Ge○J. Suh1, P. Ramesh1, A.C. Meng1, A. Kumar1, A. Kumar1, S. Gupta1, R. Islam1, P. McIntyre1, K. Saraswat1, 1.Stanford University (USA)

14:45 D-8-04Investigation of grinding or mechanical polishing surface of 4H-SiC substrate○R. Hiraide1, T. Okamoto2, M. Haraguchi2, 1.Kemet Japan CO.,LTD. (Japan), 2.FRC, Tokushima Univ. (Japan)

14:45 F-8-04Substrate Heat Resistance Engineering for Realizing High Performance Si Nanowires Thermoelectric Generator○M. Tomita1, T. Kumada1, K. Shima1, T. Zhan1, H. Zhang1,2, T. Matsukawa3, T. Matsuki1,3, T. Watanabe1, 1.Waseda Univ. (Japan), 2.Gunma Univ. (Japan), 3.AIST (Japan)

14:45 H-8-03Increasing Color-Conversion by Novel Hybrid Micro Light-Emitting Diodes with Non-Radiative Energy Transfer Effect○S.W. Huang Chen1, Z.Y. Liao1, L.F. Chen1, T.N. Lin2, P.T. Lee1, A.J. Tzou1,3, H.C. Kuo1, 1.National Chiao Tung Univ. (Taiwan), 2.Chung Yuan Christian Univ. (Taiwan), 3.National Nano Device Labs (Taiwan)

14:45 K-8-03Synthesis of N-doped Polyacenes and Single Crystal Growth by Flux Evaporation Method○N. Sakai1, T. Yanase1, T. Nagahama1, T. Shimada1, 1.Hokkaido Univ. (Japan)

14:45 N-8-03Epitaxial Thickening of a Large-grained Ge Layer on Glass for Solar Cell Applications○T. Nishida1, T. Suemasu1, K. Toko1, 1.Univ. of Tsukuba (Japan)

15:00 A-8-05Giant field-like torque observed in a Py/W/Pt trilayer system○S. Karube1,2, N. Tezuka1, M. Kohda1,2, M. Matsuura1, S. Sugimoto1, J. Nitta1,2, 1.DepaNational Institute of Informatics, Tohoku Univ. (Japan), 2.Center for Spintronics Research Network, Tohoku Univ. (Japan)

15:00 C-8-05High Performance Ge pMOSFET with Nitrided Gate Dielectrics and Microwave Annealing○C.Y. Kao1, S.H. Yi1, C.W. Hsu1, W.F. Chi1, T.M. Li1, K.S. Chang-Liao1, 1.National Tsing Hua University (Taiwan)

15:00 D-8-05Stress at Interface of SiO2/4H-SiC Studied by Confocal Raman Microscopy○W. Fu1, A. Kobayashi1, H. Yano1, S. Harada2, T. Sakurai1, 1.Univ. of Tsukuba (Japan), 2.AIST (Japan)

15:00 F-8-05Realization of High Performance and Flexibility Thermoelectric Module via Hybrid Carbon-Based Materials and Bi2Te3 Alloy○H.J. You1, K.H. Chen1,2, L.C. Chen2, T.R. Yang3, 1.Inst. of Atomic and Molecular Sciences, Academia Sinica (Taiwan), 2.Center for Condensed Matter Sciences, National Taiwan Univ. (Taiwan), 3.Department of Physics, National Taiwan Normal Univ. (Taiwan)

15:00 H-8-04Study of minority-electron transport through atomic-diffusion-bonding InGaAs/a-Ge/InGaAs interface using photodiode structures○Y. Yamada1, M. Nada1, M. Uomoto2, T. Shimatsu2, F. Nakajima1, T. Hoshi1, H. Matsuzaki1, 1.NTT Device Technology Labs, NTT Corporation (Japan), 2.Tohoku Univ. (Japan)

15:00 J-8-03 (Invited)Evaluation of Negative Capacitance Ferroelectric Field-Effect Transistors For Low Power Circuit Applications○X. Gong1, Y. Li1, E.Y.J. Kong1, Y. Kang1, K. Han1, 1.National Univ. of Singapore (Singapore)

15:00 K-8-04Dependence of Substrate Work Function on the Energy-Level Alignment at Organic-Organic Heterojunction Interface○A.L. Foggiatto1, H. Suga2, Y. Takeichi3, K. Ono3, Y. Takahashi4, T. Ueba5, S. Kera5, T. Sakurai1, 1.Univ. of Tsukuba (Japan), 2.Hiroshima Univ. (Japan), 3.High Energy Accelerator Res. Organization (KEK) (Japan), 4.Univ. of Tokyo (Japan), 5.Inst. for Molecular Science (Japan)

15:00 N-8-04Ultra-High-Speed Crystallization of Amorphous Silicon Films on Flexible Glass Substrate by Thermal-Plasma-Jet Irradiation Using Cylindrical Rotation Stage○W. Nakano1, H. Hanafusa1, S. Higashi1, 1.Hiroshima Univ. (Japan)

15:15 A-8-06Angle dependent spin-orbit interaction in a physically defined silicon double quan-tum dot○M. Marx1,2, J. Yoneda2, T. Otsuka2, K. Takeda2, Y. Yamaoka3, T. Nakajima2, S. Li2, A. Noiri2, T. Kodera3, S. Tarucha1,2, 1.Univ. of Tokyo (Japan), 2.RIKEN (Japan), 3.Tokyo Tech (Japan)

15:15 C-8-06Electron and Acoustic Phonon Confinement in Ultrathin-Body Ge on Insulator○V. Poborchii1, W.H. Chang1, H. Ishii1, N. Uchida1, J. Groenen2, P. Geshev3, T. Irisawa1, T. Maeda1, 1.AIST (Japan), 2.CEMES-CNRS and Universite de Toulouse, (France), 3.Institute of Thermophysics of the Russian Academy of Sciences (Russia)

15:15 D-8-06Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application○K. Yamamoto1, D. Wang1, H. Nakashima1, S. Hishiki2, K. Kawamura2,1, 1.Kyushu University (Japan), 2.Air Water Inc. (Japan)

15:15 F-8-06Flexible thermoelectric SiGe films formed by Al-induced layer exchange○K. Kusano1, A. Yamamoto2, T. Suemasu1, K. Toko1,3, 1.Univ. of Tsukuba (Japan), 2.AIST (Japan), 3.JST PRESTO (Japan)

15:15 H-8-05 (Late News)Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate○T. Maekura1, T. Goto1, K. Nakae1, K. Yamamoto1, H. Nakashima2, D. Wang1, 1.IGSES, Univ. of Kyushu (Japan), 2.GIC, Univ. of Kyushu (Japan)

15:15 K-8-05 (Late News)Growth Mechanism and Electrical Characterization of DPh-DNTT Films Prepared by Vacuum Deposition○Y. Hattori1, Y. Kimura1, T. Yoshioka1, M. Kitamura1, 1.Kobe Univ. (Japan)

Thursday, September 13

Room 211 Room 212 Room 213 Room 221 Room 222 Room 223 Room 231 Room 233 Room 241 Room 243 Room 244 Room 246Area 9:Novel Function & SpintronicsA-8:Spin-Orbit Interaction

Area 1:Advanced CMOSC-8:Group III-V and Ge Technology

Area 4:Power & High-speedD-8:SiC Devices and Processes

Area 6 & 11F-8:Thermoelectric Materials

Area 5:PhotonicsH-8:Light Emitting Devices and Photodiodes

Area 1 & SpecialJ-8:Innovative Device Based Circuits III

Area 7:Organic & BioK-8:Molecular Materials and Devices

Area 10:Thin FilmN-8:Crystal Growth of Group IV and Related Materials II

15:30 A-8-07Rashba-Edelstein effect in epitaxial Pt/Co bilayers grown on Al2O3(0001) substrates○Y. Du1, S. Karube1, H. Gamou1, J. Ryu1, S. Takahashi1, M. Kohda1, J. Nitta1, 1.Tohoku Univ. (Japan)

15:30 C-8-07 (Late News)Comprehensive Study of Variability in Poly-Si Channel Nanowire Transistor ~ Grain Boundary effect in Variability ~○K. Ota1, T. Kawai1, M. Saitoh1, 1.Toshiba Memory Corp. (Japan)

15:30 D-8-07 (Late News)Investigation of bias annealing effects for normally-off GaN MOS-HFET with thin AlN barrier layer○T. Nanjo1, H. Koyama2, A. Imai1, T. Watahiki1, M. Yamamuka1, 1.Mitsubishi Electric Corporation, Advanced Technology Research & Development Center (Japan), 2.Mitsubishi Electric Corporation, High Frequency & Optical Device Works (Japan)

15:30 F-8-07 (Late News)Solid-phase epitaxial growth of InxGa1-xAs on InP substrate○Y. Horita1, K. Hirayama1, Y. Tominaga1, H. Morioka2, N. Ikenaga3, O. Ueda3, 1.Hiroshima Univ. (Japan), 2.Bruker Japan K.K. (Japan), 3.Kanazawa Institute of Technology (Japan)

15:30 J-8-04Integrate-and-Fire of Input Spike Signals with High Scalability and Low Energy Consumption Using VO2 Metal-Insulator Transition○T. Yajima1, T. Nishimura1, A. Toriumi1, 1.Univ. of Tokyo (Japan)

15:45 A-8-08Dynamics of Locally Injected Spin Distribution in Undoped GaAs Quantum Wells○H. Sanada1, Y. Kunihashi1, Y. Tanaka1, A.M. Stramma1, H. Gotoh1, K. Onomitsu1, M. Kohda2, J. Nitta2, T. Sogawa1, 1.NTT Basic Research Labs (Japan), 2.Tohoku Univ. (Japan)

15:45 J-8-05Semi-Floating-Gate Synaptic Transistor (SFGST) and Its Array Architecture for Hardware-Driven Artificial Spike Neural Network (SNN) ○Y. Cho1, M.-H. Baek2, S. Cho1, B.-G. Park2, 1.Gachon University (Korea), 2.Seoul National University (Korea)

Thursday, September 13

Room 211 Room 212 Room 213 Room 221 Room 222 Room 223 Room 231 Room 233 Room 241 Room 243 Room 244 Room 246Area 9:Novel Function & SpintronicsA-8:Spin-Orbit Interaction

Area 1:Advanced CMOSC-8:Group III-V and Ge Technology

Area 4:Power & High-speedD-8:SiC Devices and Processes

Area 6 & 11F-8:Thermoelectric Materials

Area 5:PhotonicsH-8:Light Emitting Devices and Photodiodes

Area 1 & SpecialJ-8:Innovative Device Based Circuits III

Area 7:Organic & BioK-8:Molecular Materials and Devices

Area 10:Thin FilmN-8:Crystal Growth of Group IV and Related Materials II

15:30 A-8-07Rashba-Edelstein effect in epitaxial Pt/Co bilayers grown on Al2O3(0001) substrates○Y. Du1, S. Karube1, H. Gamou1, J. Ryu1, S. Takahashi1, M. Kohda1, J. Nitta1, 1.Tohoku Univ. (Japan)

15:30 C-8-07 (Late News)Comprehensive Study of Variability in Poly-Si Channel Nanowire Transistor ~ Grain Boundary effect in Variability ~○K. Ota1, T. Kawai1, M. Saitoh1, 1.Toshiba Memory Corp. (Japan)

15:30 D-8-07 (Late News)Investigation of bias annealing effects for normally-off GaN MOS-HFET with thin AlN barrier layer○T. Nanjo1, H. Koyama2, A. Imai1, T. Watahiki1, M. Yamamuka1, 1.Mitsubishi Electric Corporation, Advanced Technology Research & Development Center (Japan), 2.Mitsubishi Electric Corporation, High Frequency & Optical Device Works (Japan)

15:30 F-8-07 (Late News)Solid-phase epitaxial growth of InxGa1-xAs on InP substrate○Y. Horita1, K. Hirayama1, Y. Tominaga1, H. Morioka2, N. Ikenaga3, O. Ueda3, 1.Hiroshima Univ. (Japan), 2.Bruker Japan K.K. (Japan), 3.Kanazawa Institute of Technology (Japan)

15:30 J-8-04Integrate-and-Fire of Input Spike Signals with High Scalability and Low Energy Consumption Using VO2 Metal-Insulator Transition○T. Yajima1, T. Nishimura1, A. Toriumi1, 1.Univ. of Tokyo (Japan)

15:45 A-8-08Dynamics of Locally Injected Spin Distribution in Undoped GaAs Quantum Wells○H. Sanada1, Y. Kunihashi1, Y. Tanaka1, A.M. Stramma1, H. Gotoh1, K. Onomitsu1, M. Kohda2, J. Nitta2, T. Sogawa1, 1.NTT Basic Research Labs (Japan), 2.Tohoku Univ. (Japan)

15:45 J-8-05Semi-Floating-Gate Synaptic Transistor (SFGST) and Its Array Architecture for Hardware-Driven Artificial Spike Neural Network (SNN) ○Y. Cho1, M.-H. Baek2, S. Cho1, B.-G. Park2, 1.Gachon University (Korea), 2.Seoul National University (Korea)

Thursday, September 13