7-Bit 0.25dB Digital Step Attenuator
1MHz to 6GHz
F1958 Datasheet
© 2018 Integrated Device Technology, Inc. 1 Rev O, March 26, 2018
Description
The F1958 is part of IDT’s Glitch-FreeTM family of DSAs optimized for the demanding requirements of Base Station (BTS) radio cards and numerous other applications. This device is offered in a compact 4mm x 4mm 24-pin package with 50Ω input and output impedance for ease of integration into the radio or RF system.
The F1958 offers very high reliability due to its construction from a monolithic silicon die in a QFN package. The insertion loss is very low with minimal distortion. Additionally, the device is designed to have extremely accurate attenuation levels. These accurate attenuation levels improve system SNR and/or ACLR by ensuring system gain is as close to the targeted level as possible. In addition, the very fast settling time in parallel mode is ideal for fast switching systems. Finally, the device uses our Glitch-FreeTM technology in contrast to competing DSAs.
Competitive Advantage
Lowest insertion loss for best SNR
Glitch-FreeTM technology to protect power amplifiers or ADC during transitions between attenuation states
Extremely accurate attenuation levels
Ultra-low distortion
MSL1 and 2000 V HBM ESD
Typical Applications
3G/4G/4G+ Base Station Systems
Distributed Antenna Systems, DAS
Remote Radio Heads
Active Antenna Systems, AAS Broadband Satellite Equipment
NFC Infrastructure
Military Communication Equipment
Features
Serial and 7-bit parallel interface
31.75dB range
0.25dB steps
Glitch-FreeTM: low transient overshoot
500ns settling time for 0.25dB steps
Ultra linear > 63dBm IIP3
Low insertion loss < 1.7dB at 4GHz
Attenuation error < ±0.2dB at 4GHz
Bi-directional RF use
3.3V or 5V supply
-40°C to +105°C operating temperature
4mm x 4mm Thin QFN 24-pin package
Block Diagram
Figure 1. Block Diagram
Decoder
RF1 RF2
SPIBias
VM
OD
E
CL
K
DA
TA
LE
D[6
:0]
Glitch-FreeTM
VD
D
© 2018 Integrated Device Technology, Inc. 2 Rev O, March 26, 2018
F1958 Datasheet
Pin Assignments
Figure 2. Pin Assignments for 4mm x 4mm x 0.75mm TQFN Package – Top View
D0
VMODE
GND
GND
Decoder
EPAD
RF1
VDD
1 DATA
LE
GND
GND
RF2
CLK
GN
D
GN
D
GN
D
GN
D
GN
D
GN
D
D1
D3
D4
D6
D5
D2
2
3
4
5
6
7 8 9 10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
SPIB
I
A
S
Pin Descriptions
Table 1. Pin Descriptions
Number Name Description
1 D0 Parallel control pin – 0.25dB. Pull high for attenuation.
2 VDD Power supply input. Bypass to ground with capacitors as close as possible to pin.
3 VMODE Parallel or serial programming mode pin. Leave open or logic LOW for parallel mode. Logic HIGH for serial mode.
4, 6 - 13, 15 GND Internally grounded. These pins must be grounded as close to the device as possible.
5 RF1 RF Port 1. Can be used as either the input or output RF (bi-directional). Port must be at 0V DC. An external AC coupling capacitor must be used if there is a DC voltage present.
14 RF2 RF Port 2. Can be used as either the input or output RF (bi-directional). Port must be at 0V DC. An external AC coupling capacitor must be used if there is a DC voltage present.
16 LE Serial latch enable.
17 CLK Serial clock input.
18 DATA Serial data input.
19 D6 Parallel control pin – 16dB. Pull HIGH for attenuation. [a]
20 D5 Parallel control pin – 8dB. Pull HIGH for attenuation. [a]
21 D4 Parallel control pin – 4dB. Pull HIGH for attenuation. [a]
22 D3 Parallel control pin – 2dB. Pull HIGH for attenuation. [a]
23 D2 Parallel control pin – 1dB. Pull HIGH for attenuation. [a]
24 D1 Parallel control pin – 0.5dB. Pull HIGH for attenuation. [a]
– EPAD Exposed paddle. Internally connected to ground. Solder this exposed paddle to a printed circuit board (PCB) pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple ground vias are also required to achieve the specified RF performance.
[a] There is a 500kΩ pull-down resistor to ground.
© 2018 Integrated Device Technology, Inc. 3 Rev O, March 26, 2018
F1958 Datasheet
Absolute Maximum Ratings
The absolute maximum ratings are stress ratings only. Stresses greater than those listed below can cause permanent damage to the device. Functional operation of the F1958 at absolute maximum ratings is not implied. Exposure to absolute maximum rating conditions may affect device reliability.
Table 2. Absolute Maximum Ratings
Parameter Symbol Minimum Maximum Units
Power Supply Voltage VDD -0.3 5.8 V
VMODE, DATA, CLK, LE, D[6:0] VCTRL -0.3 Lower of
(VDD+0.25, 5.8) V
RF1, RF2 VRF -0.3 0.3 V
Maximum RF Input Power to RF1 or RF2 (> 100 MHz) PMAX +34 dBm
Junction Temperature TJMAX +150 °C
Storage Temperature Range TSTOR -65 +150 °C
Lead Temperature (soldering, 10s) TLEAD +260 °C
Electrostatic Discharge – HBM (JEDEC/ESDA JS-001-2012)
VESDHMB 2000
(Class 2) V
Electrostatic Discharge – CDM (JEDEC 22-C101F)
VESDCDM 1000
(Class C3) V
© 2018 Integrated Device Technology, Inc. 4 Rev O, March 26, 2018
F1958 Datasheet
Recommended Operating Conditions
Table 3. Recommended Operating Conditions
Parameter Symbol Condition Minimum Typical Maximum Units
Power Supply Voltage VDD 3.0 5.5 V
Operating Temperature Range TEP Exposed paddle -40 +105 °C
RF Frequency Range fRF 0.001 6 GHz
Maximum Input Power PMAX RF1 or RF2 See Figure 3 dBm
RF Peak Input Power PPEAK
RF1 Port, VDD = 3.3V, TEP= 85°C, fRF > 500MHz, WCDMA, 3GPP, Downlink, 64 DPCH, Chip rate =3.84MSPS, Avg. PIN = +22dBm
1 % 28.9
dBm 0.1 % 30.7
0.01 % 32.3
0.001 % 33.2
RF1 Port Impedance Z1 50
RF2 Port Impedance Z2 50
Figure 3. Maximum Operating CW Input Power vs. Input Frequency
© 2018 Integrated Device Technology, Inc. 5 Rev O, March 26, 2018
F1958 Datasheet
Electrical Characteristics
Table 4. Electrical Characteristics
Specifications apply at VDD = 3.3V, TEP = 25°C, fRF = 2GHz, LSB = 0.25dB steps and Evaluation Board (EVKit) trace and connector losses are de-embedded, unless otherwise noted. Minimum attenuation D[6:0] = [0000000], Maximum attenuation D[6:0] = [1111111].
Parameter Symbol Condition Minimum Typical Maximum Units
Logic Input HIGH VIH All logic pins 2.6 [a] 5.5 V
Logic Input LOW VIL All logic pins 0 1 V
Logic Current IIH, IIL -15 +15 µA
DC Current IDD VDD = 3.3V 250 400
µA VDD = 5.5V 310
Attenuation Range No missing codes 31.75 dB
Minimum Gain Step for Monotonicity
LSB
fRF < 4.0GHz 0.25
dB fRF < 6.0GHz 0.50
fRF < 8.0GHz 1.00
DSA Settling Time [b] tSET
Max to min attenuation to settle to within 0.5dB of final value
1.2
µs Min to max attenuation to settle to within 0.5dB of final value
2.0
Maximum Video Feed-Through VIDFT Measured with 10ns rise time, 0V to 3.3V control pulse
10 mVpp
Maximum Spurious Level on any RF Port [c]
SPURMAX Unused RF ports terminated into 50Ω
-118 dBm
Serial Clock Speed fCLK 10 MHz
Parallel to Serial Setup tPS 100 ns
Serial Data Hold Time tH 10 ns
LE Delay Time from final serial clock rising edge
10 ns
Maximum Switch Rate SWRATE 25 kHz
[a] Specifications in the minimum/maximum columns that are shown in bold italics are guaranteed by test. Specifications in these columns that are not shown in bold italics are guaranteed by design characterization.
[b] Speeds are measured after SPI programming is completed (data latched with LE = LOW to HIGH transition). [c] Spurious due to on-chip negative voltage generator. Typical generator fundamental frequency is 2.2MHz.
© 2018 Integrated Device Technology, Inc. 6 Rev O, March 26, 2018
F1958 Datasheet
Electrical Characteristics
Table 5. Electrical Characteristics
Specifications apply at VDD = 3.3V, TEP = 25°C, fRF = 2GHz, LSB = 0.25dB steps and Evaluation Board (EVKit) trace and connector losses are de-embedded, unless otherwise noted. Minimum attenuation D[6:0] = [0000000], Maximum attenuation D[6:0] = [1111111].
Parameter Symbol Condition Minimum Typical Maximum Units
Insertion Loss IL
1MHz ≤ fRF ≤ 1GHz 1.1
dB
1GHz < fRF ≤ 2GHz 1.3 1.8 [a]
2GHz < fRF ≤ 3GHz 1.5
3GHz < fRF ≤ 4GHz 1.6
4GHz < fRF ≤ 5GHz 1.9
5GHz < fRF ≤ 6GHz 2.6
Relative Phase Between the Minimum and Maximum Attenuation
Φ∆
fRF = 1GHz 12
deg fRF = 2GHz 25
fRF = 4GHz 50
fRF = 6GHz 70
Step Error DNL Maximum error between any two adjacent attenuation levels
0.15 0.28 dB
Absolute Attenuation Error INL
Max. error for state 19.75dB, fRF = 2000MHz
-0.4 +0.5
dB Max. error, over all states fRF = 2000MHz
-0.8 -0.25 +0.08
+0.5
RF1 Port Return Loss RL1
1MHz ≤ fRF ≤ 2GHz 20
dB 2GHz < fRF ≤ 4GHz 17
4GHz < fRF ≤ 6GHz 13
RF2 Port Return Loss RL2
1MHz ≤ fRF ≤ 2GHz 20
dB 2GHz < fRF ≤ 4GHz 16
4GHz < fRF ≤ 6GHz 12
[a] Specifications in the minimum/maximum columns that are shown in bold italics are guaranteed by test. Specifications in these columns that are not shown in bold italics are guaranteed by design characterization.
© 2018 Integrated Device Technology, Inc. 7 Rev O, March 26, 2018
F1958 Datasheet
Electrical Characteristics
Table 6. Electrical Characteristics
Specifications apply at VDD = 3.3V, TEP = 25°C, fRF = 2GHz, LSB = 0.25dB steps and Evaluation Board (EVKit) trace and connector losses are de-embedded, unless otherwise noted. Minimum attenuation D[6:0] = [0000000], Maximum attenuation D[6:0] = [1111111].
Parameter Symbol Condition Minimum Typical Maximum Units
Input IP3 IIP3
PIN = +19dBm per tone 50MHz tone separation
Attn = 0.00dB 64
dBm Attn = 15.75dB 64
Attn = 31.75dB 64
PIN = +16dBm per tone 1MHz tone separation
fRF = 0.7GHz 60 [a] 63.3
dBm fRF = 1.8GHz 60 63.7
fRF = 2.2GHz 60 63.4
fRF = 2.6GHz 60 63.7
Input 0.1dB Compression [b] IP0.1dB 35 dBm
[a] Specifications in the minimum/maximum columns that are shown in bold italics are guaranteed by test. Specifications in these columns that are not shown in bold italics are guaranteed by design characterization.
[b] The input 0.1dB compression point is a linearity figure of merit. Refer to the Recommended Operating Conditions section and Figure 3 for the maximum operating power levels.
© 2018 Integrated Device Technology, Inc. 8 Rev O, March 26, 2018
F1958 Datasheet
Thermal Characteristics
Table 7. Package Thermal Characteristics
Parameter Symbol Value Units
Junction to Ambient Thermal Resistance θJA 42 °C/W
Junction to Case Thermal Resistance (case is defined as the exposed paddle)
θJC-BOT 8 °C/W
Moisture Sensitivity Rating (Per J-STD-020) MSL 1
Typical Operating Conditions (TOC)
VDD = 3.3V
ZL = ZS = 50Ω
TEP = 25°C
fRF = 2.0GHz
Attenuation setting = 0 dB = D[6:0] =[0000000]
Pin = +16dBm / tone
50MHz tone spacing
All temperatures are referenced to the exposed paddle
Evaluation Kit traces and connector losses are de-embedded
© 2018 Integrated Device Technology, Inc. 9 Rev O, March 26, 2018
F1958 Datasheet
Typical Performance Characteristics
Figure 4. Insertion Loss vs Frequency Figure 5. Insertion Loss vs Attenuator Setting
Figure 6. Input Return Loss vs Frequency
[All States]
Figure 7. Input Return Loss vs Attenuator
Setting
Figure 8. Output Return Loss vs Frequency
[All States]
Figure 9. Output Return Loss vs Attenuator
Setting
-40
-35
-30
-25
-20
-15
-10
-5
0
0 1 2 3 4 5 6 7 8
Inse
rtio
n L
oss (
dB
)
Frequency (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Inse
rtio
n L
oss (
dB
)
Attenuation Setting (dB)
0.02 GHz 0.50 GHz 1.00 GHz 1.50 GHz 2.00 GHz2.50 GHz 3.00 GHz 3.50 GHz 4.00 GHz 4.50 GHz5.00 GHz 5.50 GHz 6.00 GHz
-40
-35
-30
-25
-20
-15
-10
-5
0
0 1 2 3 4 5 6 7 8
Re
turn
Lo
ss (
dB
)
Frequency (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Re
turn
Lo
ss (
dB
)
Attenuation Setting (dB)
0.02 GHz 0.50 GHz 1.00 GHz 1.50 GHz 2.00 GHz2.50 GHz 3.00 GHz 3.50 GHz 4.00 GHz 4.50 GHz5.00 GHz 5.50 GHz 6.00 GHz
-40
-35
-30
-25
-20
-15
-10
-5
0
0 1 2 3 4 5 6 7 8
Re
turn
Lo
ss (
dB
)
Frequency (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Re
turn
Lo
ss (
dB
)
Attenuation Setting (dB)
0.02 GHz 0.50 GHz 1.00 GHz 1.50 GHz 2.00 GHz2.50 GHz 3.00 GHz 3.50 GHz 4.00 GHz 4.50 GHz5.00 GHz 5.50 GHz 6.00 GHz
© 2018 Integrated Device Technology, Inc. 10 Rev O, March 26, 2018
F1958 Datasheet
Typical Performance Characteristics
Figure 10. Worst Case Absolute Accuracy vs
Frequency [LSB = 0.25dB]
Figure 11. Absolute Accuracy vs Attenuator
Setting [LSB = 0.25dB]
Figure 12. Worst Case Absolute Accuracy vs
Frequency [LSB = 0.50dB]
Figure 13. Absolute Accuracy vs Attenuator
Setting [LSB = 0.50dB]
Figure 14. Worst Case Absolute Accuracy vs
Frequency [LSB = 1.00dB]
Figure 15. Absolute Accuracy vs Attenuator
Setting [LSB = 1.00dB]
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0 1 2 3 4 5 6 7 8
Err
or
(dB
)
Frequency (GHz)
-40 C / Min -40 C / Max
+25 C / Min +25 C / Max
+105 C / Min +105 C / Max
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Err
or
(dB
)
Attenuation Setting (dB)
0.02 GHz 0.50 GHz 1.00 GHz 1.50 GHz 2.00 GHz
2.50 GHz 3.00 GHz 3.50 GHz 4.00 GHz
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0 1 2 3 4 5 6 7 8
Err
or
(dB
)
Frequency (GHz)
-40 C / Min -40 C / Max
+25 C / Min +25 C / Max
+105 C / Min +105 C / Max
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Err
or
(dB
)
Attenuation Setting (dB)
0.02 GHz 0.50 GHz 1.00 GHz 1.50 GHz 2.00 GHz2.50 GHz 3.00 GHz 3.50 GHz 4.00 GHz 4.50 GHz5.00 GHz 5.50 GHz 6.00 GHz
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0 1 2 3 4 5 6 7 8
Err
or
(dB
)
Frequency (GHz)
-40 C / Min -40 C / Max
+25 C / Min +25 C / Max
+105 C / Min +105 C / Max
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Err
or
(dB
)
Attenuation Setting (dB)
0.02 GHz 0.50 GHz 1.00 GHz 1.50 GHz 2.00 GHz2.50 GHz 3.00 GHz 3.50 GHz 4.00 GHz 4.50 GHz5.00 GHz 5.50 GHz 6.00 GHz
© 2018 Integrated Device Technology, Inc. 11 Rev O, March 26, 2018
F1958 Datasheet
Typical Performance Characteristics
Figure 16. Worst Case Step Accuracy vs
Frequency [LSB = 0.25dB]
Figure 17. Step Accuracy vs Attenuator Setting
[LSB = 0.25dB]
Figure 18. Worst Case Step Accuracy vs
Frequency [LSB = 0.50dB]
Figure 19. Step Accuracy vs Attenuator Setting
[LSB = 0.50dB]
Figure 20. Worst Case Step Accuracy vs
Frequency [LSB = 1.00dB]
Figure 21. Step Accuracy vs Attenuator Setting
[LSB = 1.00dB]
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0 1 2 3 4 5 6 7 8
Err
or
(dB
)
Frequency (GHz)
-40 C / Min -40 C / Max
+25 C / Min +25 C / Max
+105 C / Min +105 C / Max
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Err
or
(dB
)
Attenuation Setting (dB)
0.02 GHz 0.50 GHz 1.00 GHz 1.50 GHz 2.00 GHz
2.50 GHz 3.00 GHz 3.50 GHz 4.00 GHz
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0 1 2 3 4 5 6 7 8
Err
or
(dB
)
Frequency (GHz)
-40 C / Min -40 C / Max
+25 C / Min +25 C / Max
+105 C / Min +105 C / Max
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Err
or
(dB
)
Attenuation Setting (dB)
0.02 GHz 0.50 GHz 1.00 GHz 1.50 GHz 2.00 GHz2.50 GHz 3.00 GHz 3.50 GHz 4.00 GHz 4.50 GHz5.00 GHz 5.50 GHz 6.00 GHz
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0 1 2 3 4 5 6 7 8
Err
or
(dB
)
Frequency (GHz)
-40 C / Min -40 C / Max
+25 C / Min +25 C / Max
+105 C / Min +105 C / Max
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Err
or
(dB
)
Attenuation Setting (dB)
0.02 GHz 0.50 GHz 1.00 GHz 1.50 GHz 2.00 GHz2.50 GHz 3.00 GHz 3.50 GHz 4.00 GHz 4.50 GHz5.00 GHz 5.50 GHz 6.00 GHz
© 2018 Integrated Device Technology, Inc. 12 Rev O, March 26, 2018
F1958 Datasheet
Typical Performance Characteristics
Figure 22. Relative Insertion Phase vs
Frequency [All States]
Figure 23. Relative Insertion Phase vs
Attenuator Setting
Figure 24. Attenuation vs Frequency
[All States]
Figure 25. Attenuation vs Attenuator Setting
Figure 26. Insertion Loss vs Frequency [0dB] Figure 27. Evaluation Board Insertion Loss
-10
0
10
20
30
40
50
60
70
80
90
0 1 2 3 4 5 6 7 8
Ph
ase
(d
eg
ree
s)
Frequency (GHz)
Positive phase means the device is electrically shorter.
-10
0
10
20
30
40
50
60
70
80
90
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Ph
ase
(d
eg
ree
s)
Attenuation Setting (dB)
0.02 GHz 0.50 GHz 1.00 GHz 1.50 GHz 2.00 GHz2.50 GHz 3.00 GHz 3.50 GHz 4.00 GHz 4.50 GHz5.00 GHz 5.50 GHz 6.00 GHz
Positive phase means the device is electrically shorter.
-32
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 1 2 3 4 5 6 7 8
Att
en
ua
tio
n (
dB
)
Frequency (GHz)
-32
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Att
en
ua
tio
n (
dB
)
Attenuation Setting (dB)
0.02 GHz 0.50 GHz 1.00 GHz 1.50 GHz 2.00 GHz2.50 GHz 3.00 GHz 3.50 GHz 4.00 GHz 4.50 GHz5.00 GHz 5.50 GHz 6.00 GHz
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0 1 2 3 4 5 6 7 8
Inse
rtio
n L
oss (
dB
)
Frequency (GHz)
3.00 V / -40 C 3.30 V / -40 C 5.00 V / -40 C 5.25 V / -40 C3.00 V / +25 C 3.30 V / +25 C 5.00 V / +25 C 5.25 V / +25 C3.00 V / +105 C 3.30 V / +105 C 5.00 V / +105 C 5.25 V / +105 C
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0 1 2 3 4 5 6 7 8
Inse
rtio
n L
oss
(dB
)
Frequency (GHz)
-40 C
+25 C
+105 C
© 2018 Integrated Device Technology, Inc. 13 Rev O, March 26, 2018
F1958 Datasheet
Typical Performance Characteristics
Figure 28. Input IP3 vs Frequency [0dB] Figure 29. Input IP3 vs Attenuation [2GHz]
Figure 30. Compression vs Input Power [2GHz]
Figure 31. Typical Switching Time for a 0.25dB
Attenuation Transition
Figure 32. Switching Time between Maximum
and Minimum Attenuation
50
55
60
65
70
75
0 1 2 3 4 5 6 7 8
Inp
ut
IP3
(d
Bm
)
Frequency (GHz)
50
55
60
65
70
75
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Inp
ut
IP3
(d
Bm
)
Attenuation (dB)
-40 C / RF1 -40 C / RF2 +25 C / RF1 +25 C / RF2+105 C / RF1 +105 C / RF2
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
16 18 20 22 24 26 28 30 32 34 36
Co
mp
ressio
n (
dB
)
Input Power (dBm)
0.00 dB 0.25 dB 0.50 dB 1.00 dB
2.00 dB 4.00 dB 6.00 dB 10.00 dB
12.00 dB 18.00 dB 24.00 dB 30.00 dB
31.75 dB
-6.50
-6.25
-6.00
-5.75
-5.50
-5.25
-5.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Att
en
ua
tio
n (
dB
)
Time (µs)
5.50 dB to 5.75 dB
5.75 dB to 5.50 dB
-32
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Att
en
ua
tio
n (
dB
)
Time (µs)
0.00 to 31.75 dB
31.75 to 0.00 dB
© 2018 Integrated Device Technology, Inc. 14 Rev O, March 26, 2018
F1958 Datasheet
Programming
The F1958 can be programmed using either the parallel or the serial mode, which is selectable via VMODE (pin 3). The serial mode is selected by pulling VMODE to a logic HIGH, and the parallel mode is selected by floating VMODE or setting it to logic LOW.
Serial Mode
F1958 Serial Mode is selected by pulling VMODE to a logic HIGH. The serial interface uses a 8-bit word with only 7 bits used. The serial word is shifted in LSB (D0) first. When serial programming is used, all the parallel control input pins (1, 19 - 24) must be grounded.
Table 8. 7-Bit SPI Word Sequence
Data Bit Symbol
D7 Not Used
D6 Attenuation 16 dB Control Bit
D5 Attenuation 8 dB Control Bit
D4 Attenuation 4 dB Control Bit
D3 Attenuation 2 dB Control Bit
D2 Attenuation 1 dB Control Bit
D1 Attenuation 0.5 dB Control Bit
D0 Attenuation 0.25 dB Control Bit
Table 9. Truth Table for Serial Control Word
D7 (MSB) D6 D5 D4 D3 D2 D1 D0 (LSB) Attenuation (dB)
X 0 0 0 0 0 0 0 0
X 0 0 0 0 0 0 1 0.25
X 0 0 0 0 0 1 0 0.5
X 0 0 0 0 1 0 0 1
X 0 0 0 1 0 0 0 2
X 0 0 1 0 0 0 0 4
X 0 1 0 0 0 0 0 8
X 1 0 0 0 0 0 0 16
X 1 1 1 1 1 1 1 31.75
In the Serial Mode, the F1958 is programmed via the serial port on the rising edge of Latch Enable (LE). It is required that LE be kept logic LOW until all data bits are clocked into the shift register. The F1958 will change attenuation state after the data word is latched into the active register. Refer to Figure 33.
© 2018 Integrated Device Technology, Inc. 15 Rev O, March 26, 2018
F1958 Datasheet
Figure 33. Serial Register Timing Diagram
Table 10. SPI Timing Diagram Values for the Serial Mode
Parameter Symbol Test Condition Min Typical Max Units
CLK Frequency fC 25 MHz
CLK HIGH Duration Time tCH 20 ns
CLK LOW Duration Time tCL 20 ns
DATA to CLK Setup Time tS 10 ns
CLK Period [a] tP 40 ns
CLK to Data Hold Time tH 10 ns
Final CLK Rising Edge to LE Rising Edge tCLS 10 ns
LE to CLK Setup Time tLS 10 ns
LE Trigger Pulse Width tL 10 ns
LE Trigger to CLK Setup Time [b] tLC 10 ns
[a] (tCH + tCL) ≥ 1/fC. [b] Once all desired data has been clocked in, LE must transition from LOW to HIGH after the minimum setup time tLC and before
any further CLK signals.
Serial Mode Default Startup Condition
When the device is first powered up, it will default to the maximum attenuation of 31.75dB independent of the VMODE and parallel pin [D6:D0] conditions.
Table 11. Default Setting Truth Table for Serial Control Word
D7 (MSB) D6 D5 D4 D3 D2 D1 D0 (LSB) Attenuation (dB)
X 1 1 1 1 1 1 1 31.75
© 2018 Integrated Device Technology, Inc. 16 Rev O, March 26, 2018
F1958 Datasheet
Parallel Control Mode
For the F1958, the user has the option of running in one of two parallel modes. Direct Parallel Mode or Latched Parallel Mode.
Direct Parallel Mode
Direct Parallel Mode is selected when VMODE is floating or a logic LOW and LE is a logic HIGH. In this mode, the device will immediately react to any voltage changes on the parallel control pins (1, 19 - 24). Use Direct Parallel Mode for the fastest settling time. The serial pins, CLK and DATA, can be either grounded or left opened in the Parallel Mode.
Latched Parallel Mode
Latched Parallel Mode is selected when VMODE is floating or a logic LOW and LE is toggled from logic LOW to HIGH. To utilize Latched Parallel Mode:
Set VMODE to logic LOW or leave floating.
Set LE to logic LOW.
Adjust pins (1, 19 - 24) to the desired attenuation setting. (Note the device will not react to these pins while LE is a logic LOW).
Set LE to a logic HIGH. The device will then transition to the attenuation settings reflected by pins D6 - D0.
If LE is set to a logic LOW then the attenuator will not change state.
The truth table for the Parallel Mode is identical for bits D6 to D0 as shown in the Serial Mode truth table; see Table 9.
Figure 34. Latch Parallel Timing Diagram
Table 12. Latched Parallel Timing Diagram Values
Parameter Symbol Min Max Units
Serial to Parallel Mode Setup Time tSPS 100 ns
Parallel Data Hold Time tPDH 10 ns
LE Minimum Pulse Width tLE 10 ns
Parallel Data Setup Time tPDS 10 ns
© 2018 Integrated Device Technology, Inc. 17 Rev O, March 26, 2018
F1958 Datasheet
Evaluation Kit Picture
Figure 35. Top View
RF1 RF2
VDD
VLOGIC
SW1 Switch for parallel control
VMODE
VDD
J10 Serial Control Pins
J6 Parallel
Control Pins
Figure 36. Bottom View
© 2018 Integrated Device Technology, Inc. 18 Rev O, March 26, 2018
F1958 Datasheet
Evaluation Kit / Applications Circuit
Figure 37. Electrical Schematic
C7
R7
J2
C1 C3
J11
U1
D01
VDD2
VMODE3
GND4
RF15
GND6
GN
D7
GN
D8
GN
D9
GN
D10
GN
D11
GN
D12
DATA18
CLK17
LE16
GND15
RF214
GND13
D1
24
D2
23
D3
22
D4
21
D5
20
D6
19
PAD25
C2
VDD
C14
VDD
J10
HEADER 4
1234
R2
R11
C12
J6
10 Pin Header
12345678910
RF1
C11
J3
R13
J8
HEADER 1x2
1 2
R4
VDD
RF2
J7
HEADER 1x2
12
J9
C10
J4
R12
R9
C9
Logic LOW switch to '-' position Logic HIGH switch to '+' position
Thru Cal
D0 D1
D2 D3
D4 D5 D6VMODE VDD
GND
C15
J5
HEADER 1x2
12
R1
VDD
C13
J1
C8
R5
8 pin DIP Sw itch
8 7 6 5 4 3 2 1916
R3
C5
R14
C6
VLOGIC
R8
R10
C4
SW1
VDD
R6
© 2018 Integrated Device Technology, Inc. 19 Rev O, March 26, 2018
F1958 Datasheet
Table 13. Bill of Material (BOM)
Part Reference QTY Description Manufacturer Part # Manufacturer
C1 - C8, C11 - C13 11 100pF ±5%, 50V, C0G Ceramic Capacitor (0402) GRM1555C1H101J MURATA
C9, C15 2 1000pF ±5%, 50V, C0G Ceramic Capacitor (0402) GRM1555C1H102J MURATA
C10, C14 2 10nF ±5%, 50V, X7R Ceramic Capacitor (0603) GRM188R71H103J MURATA
R14 1 0Ω Resistors (0402) ERJ-2GE0R00X PANASONIC
R1 - R8, R11 - R13 11 100Ω ±1%, 1/10W, Resistor (0402) ERJ-2RKF1000X PANASONIC
R9 1 10kΩ ±1%, 1/10W, Resistor (0402) ERJ-2RKF1002X PANASONIC
J5, J7, J8 3 CONN HEADER VERT SGL 2 X 1 POS GOLD 961102-6404-AR 3M
J10 1 CONN HEADER VERT SGL 4 X 2 POS GOLD 67997-108HLF Amphenol FCI
J6 1 CONN HEADER VERT SGL 10 X 1 POS GOLD 961110-6404-AR 3M
J1 - J4, J11 5 Edge Launch SMA (0.375 inch pitch ground, tab) 142-0701-851 Emerson Johnson
SW1 1 SWITCH 8 POSITION DIP SWITCH KAT1108E E-Switch
U1 1 DSA F1958NBGK IDT
1 Printed Circuit Board F1958 EVKit Rev 01 IDT
J9, R10 Do Not Populate (DNP)
© 2018 Integrated Device Technology, Inc. 20 Rev O, March 26, 2018
F1958 Datasheet
Evaluation Kit Operation
Power Supply Setup
Set up a power supply in the voltage range of 3.0V to 5.5V with the power supply output disabled. The voltage can be applied via one of the following connections (see Figure 38):
J11 connector
J5 header connection (note the polarity of the GND pin on this connector)
Pin 9 (VDD) and pin 10 (GND) on the J6 header connection
Figure 38. Power Supply Connections
VDD
VDD
Parallel Logic Control Setup
The Evaluation Board has the ability to control the F1958 in the Parallel Mode. For external control, apply logic voltages to the J6 header pins 1 through 7 (see Figure 39). For manual control, switches 1 through 7 on SW1 can be set. The switch is a three-position switch. The bottom position, "-" will ground the pin. The center position "O" will leave the pin open circuited. Setting the switch to the top position "+" will apply a voltage that is supplied to the switch.
The logic voltage can be applied in one of three ways:
Apply a voltage through a SMA connector (J9). This connector is not supplied.
Apply a voltage on pin 2 of the J7 header connector.
Short out the two header connectors, J7 and J8, so a resistor divider will generate the correct logic voltage from the power supply on the Evaluation Board. The logic voltage will be VDD.
© 2018 Integrated Device Technology, Inc. 21 Rev O, March 26, 2018
F1958 Datasheet
Figure 39. Parallel Logic Voltage Connections
RF1 RF2
VDD
VLOGIC
SW1 Switch for parallel control
VMODE
VDD
J11 Serial Control Pins
J6 Parallel
Control Pins
Serial Logic Control Setup
The Evaluation Board has the ability to control the F1958 in the Serial Mode. Connect the serial controller to the J10 header connection as shown in Figure 40. To use the Serial Mode, set SW1 switch 8 to the "+" or "O" position.
The attenuation setting can be programmed according to Table 9.
Figure 40. Serial Logic Connections
RF1 RF2
VDD
VLOGIC
SW1 Switch for parallel control
VMODE
VDD
J10 Serial Control Pins
J6 Parallel
Control Pins
Power-On Procedure
Set up the voltage supplies and Evaluation Board as described in the "Power Supply Setup" section and either the "Parallel Logic Control Setup" or "Serial Logic Control Setup" sections above.
Enable the power supply.
Enable the proper attenuation setting according to Table 9.
Power-Off Procedure
Set the logic control pins to a logic LOW.
Disable the power supply.
© 2018 Integrated Device Technology, Inc. 22 Rev O, March 26, 2018
F1958 Datasheet
Application Information
Digital Pin Voltage and Resistance Values
Table 14 provides the open-circuit DC voltage referenced to ground and resistance values for each of the control pins listed.
Table 14. Digital Pin Voltages and Resistance
Pin Name Open Circuit DC Voltage
Internal Connection
3, 16, 17, 18 VMODE, LE, CLK, DATA 0V 500kΩ pull-down resistor to GND
1, 19 - 24 D0, D6 – D1 0V 500kΩ pull-down resistor to GND
Power Supplies
A common power supply should be used for all pins requiring DC power. All supply pins should be bypassed with external capacitors to minimize noise and fast transients. Supply noise can degrade the noise figure and fast transients can trigger ESD clamps and cause them to fail. Supply voltage changes or transients should have a slew rate smaller than 1V/20µs. In addition, all control pins should remain at 0V (+/-0.3V) while the supply voltage ramps or while it returns to zero.
If control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, undershoot, ringing, etc., the following circuit at the input of each control pin is recommended. This applies to pins for the SPI (16, 17, 18), parallel (1, 19-24) and VMODE pin (3) as shown below. Note the recommended resistor and capacitor values do not necessarily match the EVKit BOM for the case of poor control signal integrity. For multiple devices driven by a single control line, the component values will need to be adjusted accordingly so as not to load down the control line.
Figure 41. Control Pin Interface for Signal Integrity
DATA
Decoder
EPAD
1
2
3
4
5
6
7 8 9 10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
SPIB
I
A
S
2 pF
5 kohm
2 pF
5 kohm
2 pF
5 kohm
CLK
LE
2 pF
5 kohm
2 pF
5 kohm
2 pF
5 kohm
2 pF
5 kohm
2 pF
5 kohm
2 pF
5 kohm
2 pF
5 kohm
D6
D5
D4D3
D2
D1
VMODE
D0
2 pF
5 kohm
© 2018 Integrated Device Technology, Inc. 23 Rev O, March 26, 2018
F1958 Datasheet
Package Drawings
The package outline drawings are appended at the end of this document and are accessible from the link below. The package information is the most current data available.
www.idt.com/document/psc/nbnbg24-package-outline-40-x-40-mm-bodyepad-270mm-sq-050-mm-pitch-qfn
Ordering Information
Orderable Part Number Package MSL Rating Shipping Packaging Temperature
F1958NBGK 4mm x 4mm x 0.75mm 24 pin QFN 1 Tray -40°C to +105°C
F1958NBGK8 4mm x 4mm x 0.75mm 24 pin QFN 1 Reel -40°C to +105°C
F1958EVB Evaluation Board
F1958EVS Evaluation Solution including the Evaluation Board, Controller Board, and cable. The Evaluation Software is available for download on the product page on the IDT website: http://www.idt.com/F1958
Marking Diagram
F1958
NBGK
Z1716AAG
1. Line 1 and 2 are the part number. 2. Line 3 “Z” is for die version. 3. Line 3 “yyww” = 1716 has two digits for the year and week that the part was assembled. 4. Line 3 “NG” denotes Assembly Lot number.
© 2018 Integrated Device Technology, Inc. 24 Rev O, March 26, 2018
F1958 Datasheet
Revision History
Revision Revision Date Description of Change
O March 26, 2018 Initial Release
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