TO-247-4L
Half-Bridge Evaluation Board
Product Specification
Notice
www.rohm.com HVB01E © 2018 ROHM Co., Ltd. All rights reserved.
<High Voltage Safety Precautions>
◇ Read all safety precautions before use
Please note that this document covers only the SiC MOSFET evaluation board
(P02SCT3040KR-EVK-001) and its functions. For additional information, please refer to
the Operation Manual.
To ensure safe operation, please carefully read all precautions before
handling the evaluation board
Depending on the configuration of the board and voltages used,
Potentially lethal voltages may be generated. Therefore, please make sure to read and observe all safety precautions described in
the red box below.
Before Use [1] Verify that the parts/components are not damaged or missing (i.e. due to the drops). [2] Check that there are no conductive foreign objects on the board. [3] Be careful when performing soldering on the module and/or evaluation board to ensure that solder
splash does not occur. [4] Check that there is no condensation or water droplets on the circuit board. During Use [5] Be careful to not allow conductive objects to come into contact with the board. [6] Brief accidental contact or even bringing your hand close to the board may result in
discharge and lead to severe injury or death. Therefore, DO NOT touch the board with your bare hands or bring them too close to the board. In addition, as mentioned above please exercise extreme caution when using conductive tools such as tweezers and screwdrivers. [7] If used under conditions beyond its rated voltage, it may cause defects such as short-circuit or,
depending on the circumstances, explosion or other permanent damages. [8] Be sure to wear insulated gloves when handling is required during operation.
After Use [9] The ROHM Evaluation Board contains the circuits which store the high voltage. Since it stores the
charges even after the connected power circuits are cut, please discharge the electricity after using it, and please deal with it after confirming such electric discharge.
[10] Protect against electric shocks by wearing insulated gloves when handling.
This evaluation board is intended for use only in research and development facilities and
should by handled only by qualified personnel familiar with all safety and operating
procedures.
We recommend carrying out operation in a safe environment that includes the use of high
voltage signage at all entrances, safety interlocks, and protective glasses.
1/17
© 2017 ROHM Co., Ltd. No. 60AP001E Rev.001
2017.4
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
User’s Guide
SiC MOSFET Evaluation Board
TO-247- 4L Half-Bridge Evaluation Board
Product Specification
For SiC MOSFET evaluation we are working with fast voltage and current slew rates, thus an appropriate evaluation environment is required.
Unfortunately, it is almost impossible to get an evaluation board which fulfills all the required conditions when considering a device’s new package.
Therefore, we have developed an evaluation board based on the most common circuit configuration known as a half-bridge circuit. In order to
obtain appropriate evaluation conditions with simple preparation, this board is equipped with a driver circuit, an isolated power supply for the driver
circuit, an over current protection circuit, Gate signal protection circuit and so forth.
In this application note the evaluation board operational guide for the TO-247- 4L package will be explained. Additionally the detail information
regarding operation of this evaluation board is described in the other application note. (TO-247-4L Half-Bridge Evaluation Board Operation Manual:
No.61UG047E Rev.001)
1.Appearance
Figure 1 shows a top view picture of this evaluation board. Dimensions and weight are shown in Table 1.
Figure 1. Top view picture
Length 150 mm
Width 150 mm
Height 65 mm
Weight 0.335 kg
Table 1. Dimensions and Weight
2/17
User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
2.Main Features
This evaluation board for SiC MOSFET can demonstrate switching characteristics of two types of package such as TO-247-4L and
TO-247N.
Main features are:
Alternative mounting either TO-247-4L or TO-247-3L package
Operate only by +12V power supply
Maximum 150A double-pulse test
Maximum 500 kHz switching operation
Several power topologies supported (Buck, Boost, Half-Bridge)
Built-in isolated adjustable output power supply for gate driving (output range is +12V up to +23V.)
Alternative easy set up turn-off bias voltage either zero bias or minus bias (-2V up to -4V)
Safety function to prevent both upper and lower MOSFETs from turning on at the same time
Over current protection function (DESAT, OCP)
3.Order specification
Order form is as below. It is configured by board name, device Name, and serial number.
Minimum order quantity (MOQ) of this evaluation kit is just one piece.
Order specification is shown in Table1.
Table2. Order specification
Device Package Turn-off Bias voltage
Order specification
SCT3040KR TO-247-4L 0V P02SCT3040KR-EVK-001
SCT3080KL TO247-3L 0V P02SCT3080KL-EVK-001
SCT2080KE TO247-3L -2V P02SCT3080KE-EVK-001
SCT3040KR 2 0
Board Name
E V K 1 0 ー - 0
Device Name Serial Number
P -
3/17
User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
4.Functional block diagram
Functional block diagram is shown in Figure 2. Four functions are possible, and each function has an HS_xxx or LS_xxx description.
It means “HS” is upper arm, “LS” is lower arm. Functions without “HS” or “LS” are used in both arms.
Driving driving circuits to operate the switching power device
Logic logic circuit to control input TTL level signals
Protection protecting circuits to prevent damage to the switching power device
Power component high voltage and high current applied components
Table 3 has functional details. Each main function has several sub-functions.
Input or output signals are defined in Table 4.
Figure 2. Function block diagram
GSELPGND
HVdc
DUT_HS
DUT_LS
OCP LS-CS
HS-GADJ
LS-GADJ
HS_DESAT
LS_DESAT
IN_H_CLK
IN_L_CLK
IN_CLK
CSEL
ENABLE
LDO+5Vcc
Vcc1
DCR
Vsw
DTS&
STP
VccICAP SNB
SGND
PGND
PGNDPGND PGND
SGND
HS_GD
PRIMERY SECONDERY
BD7F200
HSGate Power
LS_GD
ActiveClamp
LS Gate Power
Active Clamp
BM6101
BD7F200
BM6101
Vcc1
HS_DSSEL
LS_DSSEL
VEE2
VCC2
VEE2
VCC2
GNDConnect
PGND
HSFID
Vcc1
Vcc1
Vcc1
LSFID
HS_GSC
LS_GSC
HS_ALOW
LS_ALOW
UVLO
UVLO1
UVLO2
UVLO1
UVLO2RCD-SNB
RCD-SNB
HS-VEESEL
HS-VEESEL
4/17
User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
Table 3. Functional details
Function Sub-function Symbol Detail
Driving Gate Driver GD Gate driving logic (included in BM6101FV-C)
Gate Power GP Power controller and components for gate driving (includes in BD7F200FV-C)
Gate Adjust GADJ Adjustment of gate resistor for MOSFET switching speed Individual adjustment of turn on and turn off
Driver Source Select DSSEL Source return route selection by TO-247N(3L) orTO-247-4L(4L)
Logic Low Drop-Out regulator LDO Power for logic circuit (included in BD450M2WEFJ)
Clock Select CSEL Set up “Single-clock mode” or “Dual/DP-clock mode”
Dead Time setup DTS Dead-time between HS and LS adjustment circuit (available in Single-clock mode)
Shoot Through Prevention STP Circuit preventing HS and LS simultaneously ON (available in Single-clock mode)
Protection
Gate Surge Clamp GSC Eliminating surge voltage between gate and source Positive or negative surge is clamped by Schottky barrier diode
(SBD) or MOSFET.
VEE2 Select VEESEL VEE2 power set up circuit 0V or -2V of turn off bias is selected by jumper pin.
GND Select GSEL GND level selection of OCP circuit “VEE2 Select” condition determines GND level of OCP circuit.
Over Current Protection OCP Over current protection circuit (LS source current sensing) Detected level is adjustable with potentiometer.
Device Under Test DUT SiC MOSFET or SiC SBD in HS and LS for evaluation
Desaturation Circuit DESAT Over current detection circuit (individual device sensing) Detected VDS voltage is adjustable by chip resistor Detect unmatched logic signal to gate signal
Fault Indicator FID Indicator of OCP and DESAT status Red LED turns on when FLT signal is high.
Current Sense CS Current Sense resistor circuit (4.7mΩ sensing resistor)
Discharge Resistor DCR Discharge resistor circuit for input capacitor (68 kohm × 6 series)
Power component
Input Capacitor ICAP Input smoothing capacitor
Snubber Capacitor SNB Snubber capacitor for DC link power line
RDC Snubber Circuit RCD_SNB Non-discharged RDC snubber circuit for individual MOSFET of HS and LS
Device Under Test DUT MOSFET or SBD in HS and LS for evaluation
5/17
User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
Table 4. Definition of Input and Output signals
Connector Pin signal I/O Details
CN201 01 ENABLE I Driver IC Enable signal. When signal is “L”, CLK signal is available. Individual control of HS and LS is invalid.
02 SGND -- Signal GND
03 IN_CLK I HS and LS MOSFET drive signal with reversal. When signal is “H”, HS side MOSFET is ON and LS side MOSFET is OFF. When signal is “L”, HS side MOSFET is OFF and LS side MOSFET is ON. When Single-clock mode, available. When Open, level is “L”.
04 IN_L_CLK I LS side MOSFET drive signal. When signal is “H”, MOSFET is ON. When DUAL/DP-clock mode, available. When Open, level is “L”.
05 SGND -- Signal GND
06 IN_H_CLK I HS side MOSFET drive signal. When signal is “H”, MOSFET is ON. When DUAL/DP-clock mode, available. When Open, level is “L”.
07 HS_ALOW I Exclusive OR function signal for “IN_H_CLK”
08 +5Vcc -- Internal logic power output. Available supply current is max. 20mA.
09 LS_ALOW I Exclusive OR function signal for “IN_H_CLK”
10 SGND -- Signal GND
CN202 01 Vcc -- Driver IC and internal logic power. (No need for gate drive power)
02 SGND -- Signal GND
JP1 01 DUAL/DP I Dual/DP-clock Mode signal. When “L”, IN_H/L_CLK signals are available. When Open, level is “H”.
02 SGND -- Signal GND
03 SINGLE I Single-clock Mode signal. When “L”, IN_CLK signal is available. When Open, level is “H”.
T1 -- HVdc -- High voltage input terminal. In Buck topology, input function. In Boost topology, output function.
T2, T4 -- Vsw -- HS side MOSFET source terminal and LS side MOSFET drain terminal. Internally connected between them
T3, T5 -- PGND -- Power GND Possible to connect to SGND. (default is connected)
6/17
User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
5.Electrical Characteristics
Table 5 lists major absolute maximum ratings of this evaluation board. This table shows limitations which should not be
exceeded. You should pay attention to apply voltage or load within these limitations for safe and non-damaged operation.
Table 5. Absolute Maximum Ratings
Parameter Symbol Min. Max. Unit Remarks
Input Voltage DC VHVdc 1200 V
Input Voltage slew rate SRHVdc 50 V/μs Limited by input film capacitor
Output Voltage VOUT 1200 V
Vcc Supply Voltage VCC 5.0 20 V For isolated gate power and internal logic
Input Signal Voltage VENABLE
VHS_ALOW VLS_ALOW
VIN_H_CLK VIN_L_CLK VIN_CLK
- 0.3 5.3 V
+5Vcc Output Current I5Vcc 20 mA Auxiliary Power Source
Storage Temperature TSTG -10 40 ℃ Limited by input film capacitor
Table 6 shows the recommended operating conditions of this board.
Table 6. Recommended Operating Conditions and Electrical Characteristics
Parameter Symbol Min. TYP. Max. Unit Remarks
Input Voltage DC VHVdc
900 V
Output Voltage VOUT
900 V
Vcc Supply Voltage VCC 10 12 15 V
Output Current IOUT
30 A
Double Pulse Current IDP
150 A
CLK signal Pulse width tPWDT 10 μs LS only, 0V bias
CLK Signal frequency fIN_xx_CLK
500 kHz
Input signal Low level voltage VIN_H_CLK VIN_L_CLK VIN_CLK VHS_ALOW VLS_ALOW VENABLE
0
1.5 V
Input signal High Level voltage 3.5 5.1 V
Operating Temperature TOPR 25
℃
Cumulative operating Time tCUM 100
Hrs.
7/17
User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
6.Schematics
P02SCT3040KR-EVK-001 schematics with SCT3040KR are shown in Figure 3.
OC
PR
ed
SML-
E12
U8
W
LS_F
AU
LT In
dic
ato
r(L
atch
ed)
HS_
FAU
LT In
dic
ato
r(L
atch
ed)
HV
dc
PG
ND
GN
D1
NC
INB
FIL
TE
RS
VC
C1
FLT
INA
EN
A
TE
ST
GN
D1
VE
E2
OU
T2
OU
T1
VT
SIN
VC
C2
VR
EG
GN
D2
SC
PIN
PR
OU
T
VE
E2
BM
6101F
V-
CE
2
0110
11 20
TP3
01
47k Ω
CLK
Se
lect
1pin側
: D
ual-C
LK
/ D
P M
ode
3pin側
:Sin
gle
-CLK
IN_H
_CLK
IN_C
LK IN_L
_CLK
HS
LS_A
LOW
VC
C1
VC
C1
+5V
ON
Gre
en
LED
SML-
D1
2P
8W
100 Ω
1/8
W
ENA
BLE
SGN
D
47
kΩ
1/8
W
22
0 Ω
1/8
W
0 Ω
1/1
0W
15k Ω
68 k
Ω
0.1
uF
1uF
35V
1608
4.7
uF
35
V,2
01
2
0.1
uF
4.7
k Ω
5%
1/4
W
RF
N1
LA
M7
S7
00
V 0
.8A
RF
N1
LA
M7
S7
00
V 0
.8A
RB
16
8V
AM
15
0T
R1
50
V 1
A
10
uF
50
V3
21
6
4.7
uF
35V
2012
R65
15
kΩ
10uF
25V
2012
22
uF
25
V3
21
6
0Ω
470Ω
+5V
cc
VC
C1 10uF
25V
2012
15
0Ω
3/4
W
10
uF
50
V3
21
6
22uF
25V 3216
2.2
k Ω
2.2
k Ω
BD
45
0M
2W
EF
J-C
E2
HT
SO
P-8
5V
/0.2
A
1uF
35V
1608
4.7
uF
35
V,2
01
2
TF
ZV
TR
2.0
B2
0m
A 0
.5W
150Ω
3/4
W
100 Ω
1/8
W
1.5
kΩ
IC3
IC1
IC2
01
IC1
IC2
VC
C1
IC2
※0.0
63W
(1005),
5%
in
case o
f no in
dic
atio
n
※R
esis
tor
of siz
e is b
elo
w
1/1
6W
:(1005 s
ize),
1/1
0W
:(1608 s
ize)
1/8
W:(
2012 s
ize),
1/3
W,2
/3W
:(3225 s
ize)
1/4
W:(
3216 s
ize),
3/4
W:(
1632 s
ize)
1W
~2W:(
6432 s
ize)
NO
P
NO
P
68kΩ
2W
MLC
C0.4
7uF
630V
MLC
C0.4
7uF
630V
Film
10uF
, 1250V
MLC
C0.4
7uF
, 630V
HV
aliv
eR
ed L
ED
SML-
D1
2U
8W
55
33IC
4
INA
_HS
IN_C
KL_
SEL
2.2
k Ω
47
mΩ
1/2
W
TP3
02
R1
R7
U2
Vsw
LE
D201
D58
4.7kΩ,1/8W
10
00
pF
16
08
※N
o in
dic
atio
n C
apacitors
is
50V
, 1005 s
ize
D53
D54
D5
5
D56
Q51
Q151
R5
6
D153
D154
R57
R321~
R330
C304
C305
C302 C
303
C306
C307
R306
R307
R309
R310
R308
T1
T2
T3
LE
D301
R53
C51
C56
C5
3
C59
C61
ZD
51
R68
R51
R52
R55
R342
> > > > > > > > > >
CN
201
SGN
D
+5V
cc
ENA
BLE
IN_H
_CLK
IN_L
_C
LK
IN_C
LK
LS_
ALO
W
HS_
ALO
W
R4
C4
C3
R3
R70
R1
1
R60
R61
R1
2
C12
R13
C13
D1
D59
C6
3R62
C201
D201
R58
R301
R302
R303
R304
R305
R201
R212
R5
R105
C202
C203
C205
C5
C6
CN
202
JP
201
JP
202
1 10
1 3D
57
D157
NO
P
NO
P
15
0A
,10
0u
s
15
0A
,10
0u
s
TP5
4
TP1
4.7
uF
35V
2012
C54
Sho
t Th
rou
gh P
reve
nti
on
Cir
cuit
Dea
d-t
ime
setu
p
LS
IC102
IC5
IC101
IC103
47
0 Ω
1/8
W
47
0 Ω
1/8
W
100p F
100p F
R2
21
C2
21
R2
22
C2
22
DTS
TP2
03
TP2
01
RF
30
2L
AM
2S
20
0V
3A
2.2
k Ω
R210
R350
R3
49
1k Ω
10
0p
F
C308
2S
CR
523E
B
Q303
RV
301
470 Ω
1/8
W
R331
1.5
kΩ
Q3
01
C3
13
1.5
k Ω
6.8
k Ω
10
0p
F
1.5
k Ω
1.5
kΩ
2S
CR
52
3E
B
2S
CR
52
3E
B
2S
CR
52
3E
B
Q302
Q3
04
R3
48
R3
47R
346 1
000pF
1608
4.7
k Ω
R343TH
1
TH
2
C312
C3
11
3.3
kΩ
R345
C310
3.3
Ω 1
/4W
3.3
Ω 1
/4W
R7
2100 Ω
1/8
W
R54
PG
ND
1M
Ω1/3
W
R334
1M
Ω1/3
W
R335
1M
Ω1/3
W
R332
1M
Ω1/3
W
R333
TP2
02
> >
SGN
D
Vcc
1 2
1
3
2
(右
回りで大きく)
Q3
05
TP3
03
Cu
rren
t Li
mit
Ad
just
4.7
uF
35V
,2012
C57
0.1
uF
C58
0.1
uF
C2
C55
1u
F3
5V
16
08
C1
NO
P
NO
P
NO
P
NOP
NO
P
NOP
R341
4.7
kΩ
10uF
25V
2012
C2
18
2S
AR
52
3E
B
100 Ω
1/8
W
R353
10uF
25V
2012
C3
09
R352
1.5
k Ω
C64
0.4
7Ω
3/4
W
10
00
pF
16
08
C3
14
NO
P
TP5
2
TP5
1
D51
RB
16
0M
M-4
0T
R4
0V
1A
NO
P NO
P
PG
ND
PG
ND
PG
ND
R7
4
D52
8.2
kΩ
100pF
Q53
VC
C1
0.1
uF
AG
ND
SD
X/E
N
CO
MP
RE
F
SW
PG
ND
FB
VIN
BD
7F
200E
FJ-L
BE
2
05
08
01
04
U1
TFZVTR15B20mA 0.5W
09
FIN
15
kΩ
LS F
AU
LTR
ed L
ED
SML-
D1
2U
8W
47
0Ω
10kΩ
2.2
kΩ
470Ω
10kΩ
2S
CR
523E
B50V
0.1
A 2S
CR
523E
B50V
0.1
A
10kΩ
LE
D2
02
R2
09 R
204
R205
R207
R203
R202
Q202
Q201
10
kΩ
R2
06
Q2
03
2S
CR
523E
B50V
0.1
A
R208
10kΩ
100pF
C206
10
uF
25
V2
01
2
C2
04
HS_
ALO
W2.2
k Ω
R6
HS
VE
E S
ele
ct
1p
in側
:0V
3p
in側
::-2
V
VIN
SE
NS
E
VD
D
CS
O
VA
DJ
VS
S
ON
/OF
F
VO
UT
S-1
9700A
00A
-E8
05
08
01
04
U51
NO
P
0 Ω
1/4
WN
OP
R7
1
10k Ω
RV
51
1
3
2
(右回りで大きく)
RB
16
0V
AMー
60
TR
60
V 1
A
R59
0.4
7u
F5
0V
16
08
100Ω
1/8
W
4.7
kΩ
1/4
W
C5
2
R73
47k Ω
0.1
uF
4.7
k Ω
5%
1/4
W
D1
55
D1
56
R156
C159
R155
C1
58
Q153
0.1
uF
RB
160M
M-4
0T
R40V
1A
R64
10
00
pF
16
08
C60
C11
C62R
75
10
00
pF
16
08
2.2
k Ω
GN
D1
NC
INB
FIL
TE
RS
VC
C1
FLT
INA
EN
A
TE
ST
GN
D1
VE
E2
OU
T2
OU
T1
VT
SIN
VC
C2
VR
EG
GN
D2
SC
PIN
PR
OU
T
VE
E2
BM
6101F
V-
CE
2
0110
11 20
47
kΩ1
5k Ω
68kΩ
1uF
35V
1608
4.7
uF
35
V,2
01
2
RB
168V
AM
150T
R150V
1A
10uF
50V
3216
4.7
uF
35V
2012
R1
65
15
kΩ
22
uF
25
V3
21
6
0Ω
RB
160M
M-4
0T
R40V
1A
15
0Ω
3/4
W
10uF
50V
3216
4.7
uF
35V
,2012
TF
ZV
TR
2.0
B2
0m
A 0
.5W
15
0Ω
3/4
W
100 Ω
,1/8
W
1.5
kΩ
INA_LS
R1
64
U102
D1
58
4.7kΩ,1/8W
10
00
pF
16
08
10
00
pF
16
08
R157
R153
C151
C156
C1
53
C161
C1
60
ZD
151
R168
R151
R152
R104
C104
C103
R103
R170
R1
11
R160
R161
C162
R1
12
C112
R1
13
C1
13
D1
01
D1
59
C163R162
R158
TP1
54
TP1
01
4.7
uF
35
V2
01
2
C154
3.3
Ω 1
/4W
3.3
Ω 1
/4W
R1
72
R1
75
4.7
uF
35V
,2012
C157
0.1
uF
0.1
uF
C1
02
C155
1u
F3
5V
16
08
C1
01
10
00
pF
16
08
NO
P
NO
P
C164
0.4
7Ω
3/4
W
TP1
52
2.2
k Ω
D151
RB
16
0M
M-4
0T
R4
0V
1A
R1
74
D152
8.2
kΩ
100pF
VC
C1
0.1
uF
AG
ND
SD
X/E
N
CO
MP
RE
F
SW
PG
ND
FB
VIN
BD
7F
200E
FJ-L
BE
2
05
08
01
04
U10
1Z
D1
01
TFZVTR15B20mA 0.5W
09
FIN
15
kΩ
2.2
k Ω
R106
VIN
SE
NS
E
VD
D
CS
O
VA
DJ
VS
S
ON
/OF
F
VO
UT
S-1
9700A
00A
-E8
05
08
01
04
U15
1
NO
P
0 Ω
1/4
WN
OP
R1
71
10k Ω
RV
151
1
3
2
(右回りで大きく)
RB
160V
AM
-60T
R60V
1A
R159
0.4
7uF
50V
1608
100 Ω
,1/8
W
4.7
kΩ
1/4
W
C1
52
R173
NO
P
Vcc
Vcc
Vcc
Vcc
VC
C1
VC
C1
ENA
BLE
2.2
k Ω
R211
ENA
BLE
LS_F
AU
LT
HS_
FAU
LT
C10
R8
39k Ω
15k Ω
100 Ω
1/8
W
3.9
k Ω
R10
R9 0 Ω0.1
uF
0.1
uF
R1
07
C1
11
C1
10
R1
08
39
k Ω
15
k Ω
3.9
k Ω
R1
10
R1
09
0 Ω0.1
uF
0.1
uF
PG
ND
1000pF
1608
R344
1.5
kΩ
10
0Ω
1/8
W
R154
1/8
WR
35
8N
OP
TP1
51
IC105
IC104
IC2
03
IC2
02
IC2
04
IC2
07
IC2
08
IC2
05
IC2
06
R311
VC
C
CT
L
NC
GN
D
NC
NC
NC
VO
UT
04
01
08
05
U201
IC3
5
IC4
5
IC5
5
IC101
5
IC104
5
IC105
5
IC102
5
IC103
5
C2
07
0.1
uF
25
V0
.1u
F 2
5V
0.1
uF
25
V0
.1u
F 2
5V
0.1
uF
25
V0
.1u
F 2
5V
0.1
uF
25
V0
.1u
F 2
5V
IC201
5
IC202
5
IC203
5
IC204
5
IC207
5
IC208
5
IC205
5
IC206
5
C7
C8
C9
C1
05
C1
08
C1
09
C1
06
C1
07
0.1
uF
25
V0
.1u
F 2
5V
0.1
uF
25
V0
.1u
F 2
5V
0.1
uF
25
V0
.1u
F 2
5V
0.1
uF
25
V0
.1u
F 2
5V
0.1
uF
25
V0
.1u
F 2
5V
C2
08
C2
09
C2
10
C2
11
C2
12
C2
13
C2
14
C2
17
10uF
25V
2012
NA
ND
: B
U4S
11
G2
(IC
1,I
C2
,IC
3,I
C4
,IC
10
1,I
C102
, IC
10
3,I
C10
4,I
C20
3,I
C20
4)
INV
: B
U4S
U6
9G
2 (
IC5,I
C1
05
,IC
20
1,I
C20
2,I
C20
7, IC
20
8,I
C20
9,I
C21
0)
Sh
um
itt
INV
: B
U4S
58
4G
2
(IC
20
5,I
C20
6)
3.9
k Ω R
101
3.9
k Ω
ZD
1
C14
0.1
uF
C1
14
0.1
uF
4.7
k Ω
R63
4.7
k Ω R163
15
0A
,10
0u
s
0 Ω
1/1
0W
R178
0 Ω
1/1
0W
R78
RS
R0
30
N0
6T
L6
0V
3A
RS
R0
30
N0
6T
L6
0V
3A
RB
160V
AM
-60T
R, 60V
1A
RB
16
0V
AMー
60
TR
60
V 1
A
1/8
W
TP5
3
TP1
53
1/1
0W
1/1
0W
R77
0 Ω
1/4
W
NO
P
Q52
NO
P
Q152
NO
P
R177
0 Ω
1/4
W
NO
P
NO
P
1/8
W
33
33
33
33
33
33
33
33
IC2
10
IC2
09
IC209
5
IC210
50
.1u
F 2
5V
0.1
uF
25
V
C2
15
C2
16
33
Vsw
T4
PG
ND
T5
R2
0 Ω
1/1
0W
0 Ω
1/1
0W
R102
1/8
W 1/8
W
1/8
W
NO
P
NO
P
C65
C66
10
uF
50
V3
21
6NO
P
NO
P10
uF
50
V3
21
6
C166
C1
65
10uF
50V
3216
10uF
50V
3216
NO
P
NO
P
CX
52
CX
51
CX
152
CX
151
HS
FAU
LTR
ed L
ED
SML-
D1
2U
8W
47
0Ω
10kΩ
2.2
kΩ4
70Ω
10kΩ
2S
CR
523E
B50V
0.1
A 2S
CR
523E
B50V
0.1
A
10kΩ
LE
D2
32
R2
39 R
234
R235
R237
R233 R
232
Q232
Q231
10kΩ
R236
Q2
33
2S
CR
523E
B50V
0.1
A
R238
10kΩ
100pF
C220
1/8
W
1/8
W
SW
20
2S
MT
E3-0
1E
-Z
134
470 Ω
1/8
W
R2
14
HS_
FAU
LT
C223
0.1
uF
C219
0.1
uF
6.8
kΩ
R243
6.8
kΩ
R213
Q204
Q234
2
(Nonlo
ck)
HS
RES
ET
R354
LE
D3
02
4.7
kΩ
Q3
06
2S
CR
52
3E
B
1.5
kΩ
R3
56
2S
CR
523E
B50V
0.1
A
2S
CR
523E
B
SW
20
1S
MT
E3-0
1E
-Z
134
2
(Nonlo
ck)
LS RES
ET
SW
30
1
SM
TE
3-0
1E
-Z
134
2
(Nonlo
ck)
E
E
E
OC
PR
ESET
1/4
W
R3
55
1.5
kΩ
VC
C1
VC
C1
VC
C1
RB
16
0M
M-4
0T
R4
0V
1A
RB
16
0M
M-4
0T
R4
0V
1A
RB
16
0M
M-4
0T
R4
0V
1A
D202
D203
D204
2.2
kΩ
R215
2.2
kΩ
R245
3.3
kΩ
R246
3.3
kΩ
R216
C224
R2
18
R2
17
R2
19
68kΩ
10kΩ
10kΩ
1uF
, 35V
1608
4.7
kΩ
10
kΩ
1.5
kΩ
R3
57
R3
40
Q3
07
2S
AR
52
3E
B
VC
C1
Q2
51
Q2
52
2S
CR
523E
B50V
0.1
A
2S
AR
523E
B50V
0.1
A
2.2
kΩ
R2
51
3.9
kΩ
R2
52
4.7
kΩ
R2
53
1.5
kΩ
R2
54
C251 1u
F3
5V
,16
08
1/8
W
47
0 Ω
1/8
W1
/8W
1/8
W
R359
10
kΩ
R2
55
VC
C1
VC
C1
R360
5m
Ω5W
NO
P
TF
ZV
TR
2.0
B2
V 2
0m
A 0
.5W
ZD
52
ZD
53
TF
ZV
TR
22
B2
2V
5m
A 0
.5W
TF
ZV
TR
2.0
B2
V 2
0m
A 0
.5W
ZD
152
ZD
153
TF
ZV
TR
22
B2
2V
5m
A 0
.5W
LE
D51
6 5 3 2
10
139
EE
2225
04398-T
256
8T
8T
6T
1211
432T
TX
10
1
178 14
6 5 3 2
10
139
EE
2225
04398-T
256
8T
8T
6T
1211
432T
TX
1
178 14
10
00
pF
16
08
LE
D151
SML
-D1
2P
8W
SML
-D1
2P
8W
RB
160V
AM
-60T
R, 60V
1A
10
00
pF
16
08
C6
7N
OP
10
00
pF
16
08
C1
67
NO
P
33nF
1000V
5750
33nF
1000V
5750
C168
D1
68
D1
69
RF
N1
LA
M7
S7
00
V 0
.8A
R179
10Ω
2/3
W3225
R180
10Ω
2/3
W3225
10Ω
2/3
W3225
C68
R79
R80
D6
8D
69
RF
N1
LA
M7
S7
00
V 0
.8A
trr=
45
ns
R361
47
0 Ω
1/8
W
R363
R362
0 Ω
1/4
W
0 Ω
1/4
WR
365
R364
0 Ω
1/4
W
0 Ω
1/4
W
NOP
NOP
R81
R181
10Ω
2/3
W3225
NO
PN
OP
NO
PN
OP
NO
P
NO
P
NO
P
NO
P
C3
15
100pF
NO
P
0 Ω
1/4
W
3.3
Ω 1
/4W
3.3
Ω 1
/4W
0 Ω
1/4
W
3.3
Ω 1
/4W 3.3
Ω 1
/4W
スルーホール
スルーホール
JP
51
31
LS
VE
E S
ele
ct
1p
in側
:0V
3p
in側
::-2
VJP
151
31
JP
52
JP
152
R3
66
10
Ω
NO
PN
OP
NO
P
NO
P
C1
15
0.1
uF
50
V
C1
5
0.1
uF
50
V
H
S
L
S
Fig
ure
3.
P02SCT3040KR
-EV
K-0
01 S
chem
atics
8/17
User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
7.BOM
Table 7. Bill of Materials
Device Mounted Symbol Parts Number Values Manufacture Package Size [mm]
PCB -- -- PCB002P Rev.D FR4, 4-layer, 3mm Thickness
ROHM 150 x 150
IC Mounted U1,U101 BD7F200EFJ-LB2 PWM IC ROHM HTSOP-J8
IC Mounted U2,U102 BM6101FV-CE2 Driver IC ROHM SSOP-20W
IC Mounted U201 BD450M2WEFJ-CE2 LDO(5V,0.2A) ROHM HTSOP-J8
IC Mounted U51,U151 S-19700A00A-E8 LDO(20V,0.4A) SII HSOP-8A
IC Mounted IC1,IC2,IC3,IC4, IC101,IC102,IC103,IC104, IC203,IC204
BU4S11G2TR NAND(single) ROHM SSOP-5
IC Mounted IC5,IC105,IC201,IC202, IC207,IC208,IC209,IC210
BU4SU69G2TR INV(single) ROHM SSOP-5
IC Mounted IC205,IC206 BU4S584G2TR Schmitt INV(S) ROHM SSOP-5
Diode Mounted D1,D51,D52,D101,D151, D152,D202,D203,D204
RB160MM-40TR 40V,1A ROHM PMDU
Diode Mounted D59,D159 RB160VAM-60TR 60V,1A ROHM TUMD2M
Diode NOP D55,D56,D155,D156 RB160VAM-60TR 60V,1A ROHM TUMD2M
Diode Mounted D58,D158 RB168VAM150TR 150V,1A ROHM TUMD2M
Diode Mounted D53,D54,D153,D154, D68,D69,D168,D169
RFN1LAM7STR 700V,0.8A ROHM PMDTM
Diode Mounted D201 RF302LAM2STR 200V,3A ROHM PMDTM
Diode NOP D57,D157 DUT TBD TO-247
Transistor NOP Q51,Q151 DUT TBD TO-247-4L
Transistor NOP Q52,Q152 DUT TBD TO-247-3L
Transistor Mounted Q53,Q153 RSR030N06TL 60V,3A ROHM SC-96
Transistor Mounted
Q201,Q202,Q203,Q204, Q231,Q232,Q233,Q234, Q301,Q302,Q303,Q304, Q306,Q251
2SCR523EBTL 50V,0.1A ROHM SC-89
Transistor Mounted Q305,Q307,Q252 2SAR523EBTL 50V,0.1A ROHM SC-89
Zener Diode Mounted ZD1,ZD101 TFZVTR15B 15V, 20mA ROHM TUMD2M
Zener Diode Mounted ZD51,ZD151 TFZVTR2.0B 2.0V, 20mA ROHM TUMD2M
Zener Diode NOP ZD52,ZD152 TFZVTR2.0B 2.0V, 20mA ROHM TUMD2M
Zener Diode NOP ZD53,ZD153 TFZVTR22B 22V, 5mA ROHM TUMD2M
LED Mounted LED201,LED51,LED151 SML-D12P8WT86L Green, 20mA ROHM 1.6 x 0.8
LED Mounted LED202,LED232,LED301, LED302 SML-D12U8WT86Q Red, 20mA ROHM 1.6 x 0.8
Switch Mounted SW201,SW202,SW301 SMTE3-01E-Z SPST, 24V,30mA Copal 6.8 x 7.0
Jumper pin Mounted JP201,JP51,JP151 929647-02-03-EU Male,3-pin 3M ---
Jumper-pin shunt Mounted JP202,JP52,JP152 QPC02SXGN-RC 2-pin, black Sullins 2.54 x 5
Terminal Mounted T1,T2,T3,T4,T5 7808 M5, 30A, 6P Keystone 12 x 12
Terminal Mounted CN201 OSTTE100104 10pin, black ON-SHORE 36 x 7
Terminal Mounted CN202 OSTTE020104 2pin, black ON-SHORE 8 x 7
Test Pin Mounted
TP1,TP101,TP201,TP202, TP203,TP51,TP52,TP53, TP54,TP151,TP152,TP153, TP154,TP302,TP303
HK-2-G SMD Mac8 3.2 x 1.6
Test Pin NOP TP301 HK-2-G SMD Mac8 3.2 x 1.6
Connector NOP CX51,CX52,CX151,CX152 73415-2061 Jack, SMD mount Molex φ3.45 3.45 x 3.45
Transformer Mounted TX1,TX101 EE2225 04398-T256 2-output SUMIDA 20 x 18
H
S
L
S
9/17
User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
Table 7. Bill of Materials
Device Mounted Symbol Parts Number Values Manufacture Package Size [mm]
Trimmer Mounted RV51,RV151 SM-3TW10kohm(103) 10k,1/8W,11turns Copal 3.9 x 3.5
Trimmer Mounted RV301 SM-31W1kohm(102) 1k,1/8W,5turns Copal 3.9 x 3.5
Resistor Mounted
R5,R6,R105,R106, R62,R162,R207, R210,R211,R212,R237, R215,R245,R251
MCR01MZPF2201 2.2k,1/16W ROHM 1.0 x 0.5
Resistor Mounted R366 MCR01MZPF10R0 10,1%,1/16W ROHM 1.0 x 0.5
Resistor Mounted R52,R152,R217 MCR01MZPF6802 68k,1%,1/16W ROHM 1.0 x 0.5
Resistor Mounted R8,R108,R51,R151, R11,R12,R111,R112
MCR01MZPF1502 15k,1%,1/16W ROHM 1.0 x 0.5
Resistor Mounted R213,R243,R348 MCR01MZPF6801 6.8k,1%,1/16W ROHM 1.0 x 0.5
Resistor Mounted R9,R109 MCR01MZPJ000 0ohm ROHM 1.0 x 0.5
Resistor Mounted R10,R110,R252, R1,R101 MCR01MZPF3901 3.9k,1%,1/16W ROHM 1.0 x 0.5
Resistor Mounted R345,R216,R246 MCR01MZPF3301 3.3k,1%,1/16W ROHM 1.0 x 0.5
Resistor Mounted R55,R155,R61,R161 MCR01MZPF4702 47k,1%,1/16W ROHM 1.0 x 0.5
Resistor Mounted R7,R107 MCR01MZPF3902 39k,1%,1/16W ROHM 1.0 x 0.5
Resistor Mounted R53,R153 MCR01MZPF8201 8.2k,1%,1/16W ROHM 1.0 x 0.5
Resistor Mounted R60,R160,R355,R356, R344,R346,R347,R357, R254,R349,R352,R350
MCR01MZPF1501 1.5k,1%,1/16W ROHM 1.0 x 0.5
Resistor Mounted
R202,R203,R205,R206, R232,R233,R235,R236, R218,R219,R358,R255, R208,R238
MCR01MZPF1002 10k,1%,1/16W ROHM 1.0 x 0.5
Resistor Mounted R2,R102,R78,R178,R301, R302,R303,R304,R305
MCR03EZPJ000 0ohm ROHM 1.6 x 0.8
Resistor Mounted R3,R4,R103,R104,R54, R154,R59,R159,R353
MCR10EZPJ101 100,5%,1/8W ROHM 2.0 x 1.25
Resistor Mounted R342 MCR10EZPF2200 220,1%,1/8W ROHM 2.0 x 125
Resistor Mounted R13,R113,R63,R163, R341,R343,R253,R340
MCR10EZPF4701 4.7k,1%,1/8W ROHM 2.0 x 1.25
Resistor Mounted R201,R204,R209,R214, R234,R239,R221,R222, R359,R361
MCR10EZPF4700 470,1%,1/8W ROHM 2.0 x 1.25
Resistor Mounted R65,R165,R68,R168 LTR18EZPF1500 150,1%,3/4W ROHM 1.6 x 3.2
Resistor Mounted R58,R158 LTR18EZPFLR470 0.47,1%,1W ROHM 1.6 x 3.2
Resistor Mounted R56,R156,R354, R64,R164 MCR18EZPJ472 4.7k,5%,1/4W ROHM 3.2 x 1.6
Resistor Mounted R74,R174 ESR18EZPJ3R3 3.3,5%,1/2W ROHM 3.2 x 1.6
Resistor Mounted R73,R173,R362,R363 MCR18EZPJ000 0ohm ROHM 3.2 x 1.6
Resistor Mounted R334,R335 KTR25JZPJ105 1M,5%,1/3W ROHM 3.2 x 2.5
Resistor Mounted R306,R307,R308,R309, R310,R311
LTR100JZPJ683 68k,5%,2W ROHM 3.2 x 6.4
Resistor Mounted R321,R322,R323,R324, R325,R326,R327,R328, R329,R330
LTR10EVHFSR047 47m,1%,1/2W ROHM 1.2 x 2.0
Resistor NOP R57,R157 MCR03EZPJ000 0ohm ROHM 1.6 x 0.8
Resistor NOP R331 MCR10EZPF4700 470,1%,1/8W ROHM 2.0 x 1.25
Resistor NOP R70,R170,R77,R177,R364,R365 MCR18EZPJ000 0ohm ROHM 3.2 x 1.6
Resistor NOP R72,R75,R172,R175,R71,R171 ESR18EZPJ3R3 3.3,5%,1/4W ROHM 3.2 x 1.6
Resistor NOP R332,R333 KTR25JZPJ105 1M,5%,1/3W ROHM 3.2 x 2.5
Resistor NOP R360 PWR4412-2S-D-R0050F 5m,1% 5W BOURNS 2.1 x 4.8
Resistor Mounted R79,R80,R81, R179,R180,R181 ESR25JZPJ100 10, 5%, 2/3W ROHM 3.2 x 2.5
10/17
User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
Table 7. Bill of Materials
Device Mounted Symbol Parts Number Values Manufacture Package Size [mm]
Capacitor Mounted
C2,C102,C10,C14,C110, C114,C53,C55,C153,C155, C5,C6,C7,C8,C9,C105, C106,C107,C108,C109, C207,C208,C209,C210, C211,C212,C213,C214, C215,C216,C206, C220,C58,C59.C158, C159,C15,C115
CGA2B3X7R1H104K050BB 0.1u,50V,X7R TDK 1.0 x 0.5
Capacitor Mounted C57,C157,C219,C223, C221,C222,C312
CGA2B2C0G1H101J050BA 100p,50V,C0G TDK 1.0 x 0.5
Capacitor Mounted C202,C56,C156, C224,C1,C101,C251
CGA3E1X7R1V105K080AC 1u,35V,X7R TDK 1.6 x 0.8
Capacitor Mounted C3,C4,C13,C103,C104, C113,C310,C311,C313
CGA3E2C0G1H102J080AA 1000p,50V,C0G TDK 1.6 x 0.8
Capacitor Mounted C64,C164 CGA3E3X7R1H474K080AB 0.47u,50V,X7R TDK 1.6 x 0.8
Capacitor Mounted C51,C52,C54,C151,C152, C154,C62,C63,C162,C163
CGA4J1X7R1V475K125AC 4.7u,35V,X7R TDK 2.0 x 1.25
Capacitor Mounted C203,C204,C205, C217,C218,C309
CGA4J1X7S1E106KT0Y0N 10uF,25V,X7S TDK 2.0 x 1.25
Capacitor Mounted C60,C61,C160,C161 CGA5L3X5R1H106K160AB 10uF,50V,X5R TDK 3.2 x 1.6
Capacitor Mounted C12,C112,C201 C3216X5R1E226M160AB 22uF,25V,X5R TDK 3.2 x 1.6
Capacitor Mounted C304,C305 CGA9P1X7T2J474M250KC 0.47u,630V,X7T TDK 5.7 x 5.0
Capacitor Mounted C302,C303 B32776G1106K000 10uF,1250V TDK 42 x 28
Capacitor Mounted C68,C168 C5750C0G3A333J280KC 33000pF,1000V TDK 5.7 x 5.0
Capacitor NOP C11,C111 CGA2B3X7R1H104K 0.1u,50V,X7R TDK 1.0 x 0.5
Capacitor NOP C308,C315 CGA2B2C0G1H101J050BA 100p,50V,C0G TDK 1.0 x 0.5
Capacitor NOP C314,C67,C167 CGA3E2C0G1H102J080AA 1000p,50V,C0G TDK 1.6 x 0.8
Capacitor NOP C65,C66,C165,C166 CGA5L3X5R1H106K160AB 10uF,50V,X5R TDK 3.2 x 1.6
Capacitor NOP C306,C307 CGA9P1X7T2J474M250KC 0.47u,630V,X7T TDK 5.7 x 5.0
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User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
8.PCB Layout
This PCB has four layers. Each layer routing of PCB is illustrated in Figure 4. (a), (b), (c), (d). The silkscreen top and bottom are
shown in Figure 4 (e), (f).
Also, the Gerber-files can be provided. Get in contact with our application support team.
Figure 4. (a) Top Layer (Top view)
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© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
Figure 4. (b) Layer 2 (Top view)
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User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
Figure 4. (c) Layer 3 (Top view)
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User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
Figure 4. (d) Bottom Layer (Top view)
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User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
Figure 4. (e) Top assembly silkscreen
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User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
Figure 4. (f) Bottom assembly silkscreen
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User’s Guide TO-247-4L Half-Bridge Evaluation Board
© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001
Dec. 2019
9.Precautions
In addition to the precautions listed throughout this manual and “Operation Manual” (No.61UG047E Rev.001), please read and
understand the following conditions. This evaluation board can have over 1000V applied. Therefore, not only on-board-problems
but also human failures by wrong operation must be removed completely.
In Table 8, the particular precautions about this board abnormal status are shown. In addition, after all safety steps are taken, this
board may be used.
Table 8. Abnormal status of the evaluation board
Function
Items Details
DCR LED non-lighted Please check LED301 (Red) turns ON, when input-voltage is applied. If no LED turns ON, please check voltage-source, layout and so on. (LED turns ON, when in/output voltage gets over around 20V.)
FLT LED non-lighted Please check that under FAULT-status, even inputting clock signal, MOSFET drive-signal does not come out and LED202 and LED232 (RED) turns ON. If clock signal over 20us is input without mounting MOSFET, it leads to FLT status.
OCP Protection circuit is not 100 % risk avoidance.
This OCP cannot avoid danger completely. This function is for emergency-stop when protection operation does not work in case of accidental output short-circuit under open-loop control. Thus during HVdc application, please conduct constant monitoring so that instant action against abnormal status is possible such as power cut-off.
FLT LED lighted during LS DPT In the default condition (0V bias), a pulse width of the double pulse test should be utilized within 10μs and 30A of drain current. However, this limitation is LS MOSFET DPT only. If this evaluation board is utilized out of this limitation, LS_FAULT LED (LED202) will be turned on. In case that over 10μs pulse width is applied, the level-shift condition of OCP circuit should be changed. Get detailed information from the operation Manual of this evaluation board (No.61UG047E Rev.001).
HVdc Vsw
Over-spec voltage application Miss-layout
Please let an expert handle the board. Over-spec voltage must not applied. Please make sure that there is no miss-connection of layout. Please never touch it when it is under operation.
Vcc Miss-layout Over-spec voltage application
Please pay attention to layout not to apply positive and negative Vcc in reverse. Note that a diode is connected between Vcc to SGND (D201) in order to prevent destruction of the TTL logic circuit. The maximum current rating is 3 A. Therefore, an OCP level of Vcc power supply should be set up to 3A. Also unspecified voltage-application leads to malfunction. Please operate with full-check.
SNB RDC_SNB
MLCC Burn-out Large size MLCCs are used. Mechanical stress easily leads to short-circuit malfunction due to cracks. Please pay attention when handling the board to prevent over-stress.
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Notice
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N o t e s
The information contained herein is subject to change without notice.
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Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
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ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.
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