Solution DescriptionProduct RecommendationsInteractive Block Diagram (onsemi.com)
Automotive Traction Inverter Solution Description
Introducing the Block Diagram of the Month for October 2019 – The Automotive Traction Inverter
Solution. Global legislation to reduce CO2 emissions and enhancement of fuel economy is driving
automotive manufacturers to design electrified powertrain systems with reduced size and weight
that exhibit optimal power efficiency. The primary function of the traction inverter is to convert the
DC voltage from the high voltage battery (350-800 VDC) to a three-phase AC sinusoidal current
that in turn rotates an electric induction motor and propels the vehicle. Our broad automotive
portfolio contains technologies to facilitate a cost effective, robust and competitive solution for
operation of the three-phase induction motor infull, plug-in hybrid and hybrid electric vehicles using
a traction inverter.
Primary blocks of the topology:
Isolated Power Supplies
Three Phase Inverter Stage
Signal Processing and Conditioning
Communication Bus
Isolated Power Supplies:
The function depicted by the power management block in the
traction inverter solution is to generate isolated power supplies
that create a barrier between the high and low voltage circuit
topologies contained within the system to prevent connection of
the grounds between the low voltage and high voltage batteries.
Resonant controllers, flyback controllers and linear voltage
regulators are used to generate power sources for digital circuits,
analog circuits, integrated circuit voltage references and high
voltage gate drivers used to control the conduction of the separate
phases in three-phase inverter. Numerous high efficiency
resonant and flyback controller topologies can be constructed
using the ON Semiconductor recommended solutions listed in the
product selection table depending on the system level
requirements.
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Three Phase Inverter Stage:
The primary components of the three-phase
inverter stage are the high and low side
switches of each of the inverter ½ bridge
phases and the corresponding high voltage
isolated gate drivers that turn on and off those
switches that generate a three-phase AC
sinusoidal waveform to operate the induction
motor. The high and low side switch control on
each inverter phase is managed through a
variable frequency drive control algorithm
deployed by a microprocessor. Besides
providing the galvanic isolation for separation
of the high voltage system from the low voltage
system, one of the key features of our high
voltage gate driver technology is the DESAT
(desaturation) detect feature that prevents a
“shoot through” effect during an IGBT short
circuit condition. In addition, our high voltage
gate drivers have miller clamp capability to
prevent un-intentional parasitic turn on of one
of the switches. For enhanced protection, the
device has fault indicator capability to inform the system of malfunction and an enable input. For the ½ bridge inverter stages, discrete and modular solutions
are offered in our automotive portfolio. The traction inverter phases can be constructed using discrete IGBT’s, integrated modules from the VE-TracTM
(vehicle electrification Traction) family and discrete SiC MOSFETS. All these solutions are able to interface with the high voltage gate driver. Bare die
products with the IGBT and fast recovery diode are also available to build the three-phase inverter stage and are included in the product selection table.
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ON Semiconductor offers AECQ-101 qualified 650V discrete IGBT parts rated at 120 and 160 Amps that exhibit superior thermal
and electric performance. Due to the IGBT having a characteristically low VCE(sat) and gate charge, conduction and switching losses
are minimized thereby translating into high efficiency operation. Our IGBT’s are co-packaged with a fast reverse recovery diode
and are constructed using the competitive field stop trench technology utilizing a fine cell pitch design to create a high power density
part with rugged immunity to dynamic latch-up conditions. Depending on the power requirement for the motor, multiple IGBT’s can
be placed in parallel on each high and low side switches of the inverter ½ bridge phases.
The VE-TracTM Dual Side Cooling ½ bridge modules consist of 2 IGBT’s co-packaged
with fast recovery diodes connected in a high and low side configuration. The IGBT’s are
constructed using the Field Stop 4 Trench Technology with characteristic low switching
and conduction losses. Each module represents one phase of the three separate phases
required for the traction inverter system. The device offers top side and bottom side
cooling with surfaces attaching to heat sinks encapsulated throughout the system
resulting in lower thermal resistance. The lower thermal resistance allows for higher
magnitudes of current to pass through a small, compact footprint translating into a high
power system with cost and size reductions. The dual side cooling modules allow for
modular scalability as units can be stacked in parallel configurations to create a higher
power solution. The module is capable of continuous operation up to 175°C, with wire
free bonding essential for higher reliability and longer part lifetime. The device features
overcurrent and over temperature protection.
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The VE-TracTM Single Side Direct Cooling Module
integrates IGBT’s in a six-pack configuration with each
IGBT having the co-packaged fast recovery diode. Like the
dual side cooling modules and the discrete IGBT parts, the
technology integrated in the design has characteristic low
conduction and switching losses resulting in high efficiency.
The device is configured in three high and low side ½ bridge
configurations that make up the three-phase inverter to
enable operation of the electric induction motor. The module
is a “plug and play” type of device targeting ease of
assembly and integration. The module has a direct cooling
surface with an integrated pin fin heat sink resulting in a lower thermal resistance that enables a high current operation.
The flip side of the device contains press-fit type pins on the signal terminals for ease of assembly and integration. This modular solution is not easily scalble
and limited to between 160-180kW power class operation. The module can operate continuously at 175°C with integrated temperature sensing for all ½
bridge inverter phases.
For electric vehicle systems with an 800V battery, discrete 1200V rated 20, 80 mΩ SiC MOSFETS released in D2PAK-7L and
TO-247 packages can be inserted into each high and low side switch in the three inverter phases. Compared to silicon, SiC
MOSFETS provide superior switching performance and higher reliability. The devices have low ON resistance and compact
chip size to ensure low capacitance and gate charge. These characteristics result in system benefits that include high efficiency,
fast operation frequency, increased power density, reduced EMI and facilitation of space reduction.
The Diode and IGBT bare die optimized for traction inverter applications is rated for continuous operation at 175°C having
low VCE(sat) and VF featuring enhanced reliability and ruggedness. The bare die selections are listed in the product selection
table.
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Signal Processing and Conditioning:
The primary function of the analog measurement and signal conditioning block is to process the current and temperature sense signals from the inverter along with the current and motor position sense signals from the induction motor. The isolated power supplies constructed using the resonant and flyback controllers can provide power sources to the microcontroller, signal conditioning and analog measurement circuits. ON Semiconductor offers AECQ qualified logic components, comparators, operational amplifiers and current sense amplifiers to construct the signal processing circuitry to interface with the microcontroller A/D converter unit to complete the closed loop system.
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Communication Bus:
ON Semiconductor offers CAN, CAN-FD, LIN, Flexray and SBC based transceivers that ensure robust in-vehicle communication at data rates beyond one Mbps to adhere to requirements of contemporary in-vehicle networks. In addition, ON Semiconductor offers AECQ-101 qualified communication bus protection devices with a 175°C Tj Max rating designed to protect vehicle communication lines from ESD and other harmful transient voltage events. These devices provide bi- directional protection for each data line, giving the system designer low cost option for improving system reliability and meeting stringent EMI requirements.
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Block Diagram Name: Automotive Traction InverterSuggested Block WPN Why Select? WPN Desciption
3 Φ VSI - Single Side Direct Cool - 6 Pack
Three Phase Power Module NVH820S75L4SPB 820A, 750V, FS4, Shot AC Power Bus Terminals3 Φ VSI - Single Side Direct Cool - 6 Pack
Three Phase Power Module NVH820S75L4SPC 820A, 750V, FS4, Long AC Power Bus Terminals3 Φ VSI - Dual Side Cooling
Half Bridge Power Module NVG800A75L4DSC 750V, 800A DSC FS4 & Fast Diode chip technologies
Automotive 750V, 800A Dual Side
Cooling Half-Bridge Power Module
3 Φ VSI - IGBT (bare die) PCGA300T65DF8
With integrated temperature sense and current sense. Cost saving than 750V
bare die.
650V 300A FS3 IGBT Bare die. Al Wirebondable version. With integrated
temperature sense and current sense
3 Φ VSI - IGBT (bare die) PCGA200T65NF8 650V 200A IGBT Bare die. Al Wirebondable version. 650V 200A FS3 IGBT Bare die. Al Wirebondable version.
3 Φ VSI - IGBT (bare die) PCGA160T65NF8 650V 160A IGBT Bare die. Al Wirebondable version. 650V 160A FS3 IGBT Bare die. Al Wirebondable version.
3 Φ VSI - IGBT (bare die) PCRKA30065F8 650V 300A diode Bare die. Al Wirebondable version. 650V 300A Extremefast diode Bare die. Al Wirebondable version.
3 Φ VSI - IGBT (bare die) PCRKA20065F8 650V 200A diode Bare die. Al Wirebondable version. 650V 200A Extremefast diode Bare die. Al Wirebondable version.
3 Φ VSI - IGBT (bare die) PCRKA16065F8 650V 160A diode Bare die. Al Wirebondable version. 650V 160A Extremefast diode Bare die. Al Wirebondable version.
3 Φ VSI - IGBT (discretes) FGY160T65SPD-F085 Rugged transient reliability, low switching losses 650V, 160A Field Stop Trench IGBT With Soft Fast Recovery Diode
3 Φ VSI - IGBT (discretes) FGY120T65SPD-F085 Rugged transient reliability, low switching losses 650V, 120A Field Stop Trench IGBT With Soft Fast Recovery Diode
3 Φ VSI - IGBT (bare die) PCGA300T65DF8M1
650V 300A IGBT Bare die. Double side sinterable and solderable version. With
integrated temperature sense and current sense
650V 300A FS3 IGBT Bare die. Double side sinterable and solderable version.
With integrated temperature sense and current sense
3 Φ VSI - IGBT (bare die) PCGA200T65NF8M1 650V 200A IGBT Bare die. Double side sinterable and solderable version. 650V 200A FS3 IGBT Bare die. Double side sinterable and solderable version.
3 Φ VSI - IGBT (bare die) PCRKA30065F8M1 650V 300A diode Bare die. Double side sinterable and solderable version.
650V 300A Extremefast diode Bare die. Double side sinterable and solderable
version.
3 Φ VSI - IGBT (bare die) PCRKA20065F8M1 650V 200A diode Bare die. Double side sinterable and solderable version.
650V 200A Extremefast diode Bare die. Double side sinterable and solderable
version.
3 Φ VSI - IGBT (bare die) PCGLA200T75NF8 industry leading 750V 200A IGBT Bare die. 50V 200A FS4 IGBT Bare die. Al Wirebondable version.
3 Φ VSI - IGBT (bare die) PCRKA20075F8 industry leading 750V 200A diode Bare die. Improved softness 750V 200A Extremefast Gen2 diode Bare die. Al Wirebondable version.
3 Φ VSI - SiC MOSFET NVBG020N120SC1
Rated 1200 V @ TJ = 175°C, High Speed Switching with Low Capacitance ,100%
UIL Tested, AEC−Q101 Qualified, Pb−Free and are RoHS Compliant, D2PAK-7L
Package MOSFET, N-Channel, 1200 V, 20 mΩ, D2PAK−7L
3 Φ VSI - SiC MOSFET NVHL080N120SC1
Rated 1200 V @ TJ = 175°C, High Speed Switching with Low Capacitance ,100%
UIL Tested, AEC−Q101 Qualified, Pb−Free and are RoHS Compliant, TO-247
Package MOSFET, N-Channel, 1200 V, 80 mΩ, TO247−3L
Gate Drivers FAN7191-F085, FAD7191 Lower price 600V, 4.5A, High & Low Side Automotive Gate Driver IC
Gate Drivers NCV5700x Isolation (galvanically), high current +4A/-6A, Active Miller Clamp
Isolated high current and high efficiency IGBT gate driver with internal galvanic
isolation.
Gate Drivers NCV570x High current +4A/-6A, Active Miller Clamp IGBT Gate Drivers, High-Current, Stand-Alone
Gate Drivers NCV51705 SiC switches, high current 6A, lower switching losses, high dV/dt Automotive SiC MOSFET Driver, Low-Side, Single 6 A High-Speed
Signal Processing & Conditioning - Comparators
Analog comparators choosen by specific system level design requirements. (low
noice, wide bandwidth, R-to-R operation, etc.)
NCS2250, NCS2252 (Non-AECQ Qualified)
NV2252, NCV2250 (AECQ Qualified) Low voltage, fast response time and rail−to−rail input and output. Comparator, High Speed, 50 ns, Low Voltage, Rail-to-Rail, Push-Pull
Signal Processing & Conditioning - Comparators
NCS2200, NCS2200A, NCS2202 (Non-AECQ Qualified)
NCV2200, NCV2200A, NCV2202 (AECQ Qualified) Low power Comparator, Complementary, Low Voltage
Signal Processing & Conditioning - Comparators
NCV2393 (AECQ Qualified)
TS393 (Non-AECQ Qualified) Low supply current, wide power supply range 2.7V to 16V Comparator, Dual, CMOS, 16 V Supply
Signal Processing & Conditioning - Comparators NCV2901, NCV2903
Single Supply Quad/dual Comparators, TTL and CMOS Compatible, Low Output
Saturation Voltage, Single Supply Operation ans wide range operation Comparator, Quad, Single Supply, 36V
Signal Processing & Conditioning - Operational Amplifiers
Op-amps choosen by specific system level design requirements. (low noice, wide
bandwidth, R-to-R operation, etc.)
NCS20071 (Non-AECQ Qualified)
NCV20071 (AECQ Qualified) Wide supply range, wide bandwidth, low supply current Operational Amplifier, Wide supply range, 3Mhz CMOS Op-Amp
Signal Processing & Conditioning - Operational Amplifiers
NCS2333 (Non-AECQ Qualified)
NCV2333 (AECQ Qualified) High accuracy, lower drift Precision Operational Amplifier, Low Power, Zero-Drift, 30 µV Offset
Signal Processing & Conditioning - Operational Amplifiers
NCS20061 (Non-AECQ Qualified)
NCV20061(AECQ Qualified) Wide bandwidth (3MHz), rail-to-tail voltage Operational Amplifier, 5.5V Rail-to-Rail Input and Output, 3 MHz, Single
Signal Processing & Conditioning - Operational Amplifiers
NCS21911 (Non-AECQ Qualified)
NCV21911 (AECQ Qualified) Zero-Drift low input voltage
Precision Operational Amplifier, 2 MHz Bandwidth, Low Noise, Zero-Drift, 25 µV
Offset
Signal Processing & Conditioning - Operational Amplifiers
LM833 (Non-AECQ Qualified)
NCV833 (AECQ Qualified) High performance, low voltage Operational Amplifier, Low Noise, Audio, Dual
Signal Processing & Conditioning - Operational Amplifiers
MC33078 (Non-AECQ Qualified)
NCV33078 (AECQ Qualified) Dual supply, low noise Operational Amplifier, Low Noise, Dual
Signal Processing & Conditioning - Operational Amplifiers
MC33174 (Non-AECQ Qualified)
NCV33174 (AECQ Qualified) Single and wide supply, low power Operational Amplifier, Single Supply 3.0 V to 44 V, Low Power, Quad
Signal Processing & Conditioning - Current Sense Amplifiers
CSA choosen by systems level design requirements (gain=50 to 200)
NCS210R (Non-AECQ Qualified)
NCV210R (AECQ Qualified)
NCS211R (Non-AECQ Qualified)
NCV211R (AECQ Qualified)
NCS213R (Non-AECQ Qualified)
NCV213R (AECQ Qualified)
NCS214R (Non-AECQ Qualified)
NCV214R (AECQ Qualified)
Different gain values, offset V and %error. High accuracy, high-low side, wide
input voltage.
Current Sense Amplifier, 26V, Low-/High-Side Voltage Out, Bidirectional Current
Shunt Monitor
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Block Diagram Name: Automotive Traction InverterSuggested Block WPN Why Select? WPN Desciption
Power Mgmt. - Auxiliary Power Supplies
Current mode and voltage mode dc-dc controllers for dc-dc power conversion
circuits. Various controller choices are dependent on the customers system level
control scheme. NCV881930 Low Quiescent Current 410 kHz Automotive Synchronous Buck Controller Low Quiescent Current 410 kHz Automotive Synchronous Buck Controller
Power Mgmt. - Auxiliary Power Supplies NCV8873 Non-Synchronous Boost Controller, Automotive Grade Non-Synchronous Boost Controller, Automotive Grade
Power Mgmt. - Auxiliary Power Supplies NCV891930 Higher swiching freq for more compact system Low Quiescent Current 2 MHz Automotive Synchronous Buck Controller
Power Mgmt. - Auxiliary Power Supplies NCV6357 Higher integration, I2C output programming Synchronous Buck Converter, Processor Supply, I2C Programming, 5.0 A
Power Mgmt. - Auxiliary Power Supplies CS51021A Several additional features for system integration Enhanced Current Mode PWM Controller for Forward or Flyback
Power Mgmt. - Auxiliary Power Supplies NCV1034 For 48V bus supply, programmable switching freq. AEC Qual - 100 V Synchronous Buck Controller
Power Mgmt. - Auxiliary Power Supplies NCV494 PWM Controller (Automotive) PWM Controller (Automotive)
Power Mgmt. - Auxiliary Power Supplies NCV8851-1 High power, high transient response and adjustable output Automotive Average Current Mode Controller
Power Mgmt. - Auxiliary Power Supplies NCV898031 Wide input voltage and load range transient response Non-Synchronous SEPIC / Boost Controller, 2 MHz
Power Mgmt. - Linear Voltage Regulators
LDOs and linear voltage regulators with wide input voltage (60 V) for Automotive
applications and high performance LDOs for post regulation with Low Iq, high
PSRR, Low Vin, high current and low noise. Voltage regulators, choosen by the
customer specific design. NCV1117
LDO fixed (within 8 levels) or adjustable (between 1.25 to 18.8V) linear voltage
regulators with max output current 1A ans 1.2V drop. Linear Voltage Regulator, 1 A, High PSRR
Power Mgmt. - Linear Voltage Regulators NCV78M Ruggdness and integration Linear Voltage Regulator, 500 mA, 5 to 24 V, High PSRR, Positive
Power Mgmt. - Linear Voltage Regulators MC79M05 (Not AECQ-Qualified) Negative LDO, complement to MC78M series LDO Regulator, 500 mA, 5 V, Negative
Power Mgmt. - Linear Voltage Regulators NCV4949A Less than 0.4V dropout 5V output, integration LDO Regulator, 100 mA, Low Dropout
Power Mgmt. - Linear Voltage Regulators NCV5500
linear voltage regulator, 500mA over an adjustable voltage range (1.25 to 5.0V)
or a fixed output voltage. Typical voltage accuracy better than 3%, dropout
voltage at 500mA 230mV. DPAK 5 and SOIC 8 LDO Regulator, 500 mA, Low Dropout, High PSRR
Power Mgmt. - Linear Voltage Regulators NCV5501 As NCV5500 in DPAK 3 package LDO Regulator, 500 mA, Low Dropout, High PSRR
Power Mgmt. - Linear Voltage Regulators NCV78L05A/MC78L
inexpensive linear voltage regulator, easy to use suitable for multitude of
applications that require a regulated supply up to 100 mA. Linear Voltage Regulator, 100 mA, 5 to 24 V, Positive
Power Mgmt. - Linear Voltage Regulators NCV8170 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 150mA, PSRR:57dB, Noise:85µVRMS, Dropout:170mV
Power Mgmt. - Linear Voltage Regulators NCV8752 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 200mA, PSRR:68dB, Noise:11.5µVRMS, Dropout:130mV
Power Mgmt. - Linear Voltage Regulators NCV8163 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 250mA, PSRR:92dB, Noise:6.5µVRMS, Dropout:80mV
Power Mgmt. - Linear Voltage Regulators NCV8114 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 300mA, PSRR:75dB, Noise:70µVRMS, Dropout: 135mV
Power Mgmt. - Linear Voltage Regulators NCV8161 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 450mA, PSRR:90dB, Noise:10µVRMS, Dropout:225mV
Power Mgmt. - Linear Voltage Regulators NCV8165 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 500mA, PSRR:85dB, Noise:8.5µVRMS, Dropout:190mV
Power Mgmt. - Linear Voltage Regulators NCV8705 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 500mA, PSRR:75dB, Noise:12µVRMS, Dropout:230mV
Power Mgmt. - Linear Voltage Regulators NCV8177 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload:500mA, PSRR:75dB, Noise:54µVRMS, Dropout:200mV
Power Mgmt. - Linear Voltage Regulators NCV8152 Dual Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 150mA, PSRR:75dB, Noise:75µVRMS, Dropout:150mV
Power Mgmt. - Linear Voltage Regulators NCV8154 Dual Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload:300mA, PSRR:75dB, Noise:75µVRMS, Dropout:160mV
Power Mgmt. - Linear Voltage Regulators NCV8130 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 300mA, PSRR:65dB, Noise:40µVRMS, Dropout:75mV
Power Mgmt. - Linear Voltage Regulators NCV8720 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 350mA, PSRR:65dB, Noise:40µVRMS, Dropout:110mV
Power Mgmt. - Linear Voltage Regulators NCV8133 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 500mA, PSRR:70dB, Noise:40µVRMS, Dropout:140mV
Power Mgmt. - Linear Voltage Regulators NCV8135 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 500mA, PSRR:60dB, Noise:35µVRMS, Dropout:40mV
Power Mgmt. - Linear Voltage Regulators NCV8716 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 80mA, PSRR:52dB, Noise:190µVRMS, Dropout:250mV
Power Mgmt. - Linear Voltage Regulators NCV8718 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 300mA, PSRR:60dB, Noise:36µVRMS, Dropout:305mV
Power Mgmt. - Linear Voltage Regulators NCV59800 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload:1A, PSRR:63dB, Noise:15µVRMS, Dropout:200mV
Power Mgmt. - Linear Voltage Regulators NCV8187 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload:1.2A, PSRR:75dB, Noise:15µVRMS, Dropout:200mV
Power Mgmt. - Linear Voltage Regulators NCV59748 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 1.5A, PSRR:60dB, Noise:25µVRMS, Dropout: 60mV
Power Mgmt. - Linear Voltage Regulators NCV59745 Low Noise, AECQ-100 Qualified, High PSRR, Low Dropout, Low Iq Iload: 3A, PSRR:75dB, Noise:6µVRMS, Dropout:105mV
Power Mgmt. - Voltage Reference
Voltage references, including bandgap and negative voltage references. Voltage
references choosen by the customer specific design. NCV51460
Precision voltage reference, can supply 20mA @ 3.3V, PSRR 68dB at 1 kHz, No
external cap needed, temperature coefficient of 34ppm/°C, output votlage
accuracy 1% over temp range LDO Regulator, 20 mA, Low Noise
Power Mgmt. - Voltage Reference NCV1009
2.5 V voltage regulator ± 5 mV shunt regulator diode. Low dynamic impedence
and wide operating current range. 2.5 V Voltage Reference
Power Mgmt. - Voltage Reference
TL431 (Non-AECQ Qualified)
NCV431A (AECQ Qualified) Programmable output, wide operating current range
Voltage Reference, Programmable Precision, Shunt Regulator
Communication - LIN Transceivers AMIS-30600 I2T100 technology LIN Transceiver, Stand-alone
Communication - LIN Transceivers NCV7321 I3T technology, lower power. LIN Transceiver, Stand-alone
Communication - LIN Transceivers NCV7424 4 channel version Quad LIN Transceiver
Communication - LIN Transceivers NCV7420 System chip with LIN and LDO System Basis Chip with LIN and LDO Regulator
Communication - LIN Transceivers NCV7422 2 channel version Dual LIN Transceiver
Communication - FlexRay Transceivers NCV7381A Clamp 30 compliant with FlexRay3.0.1. spec. FlexRay® Transceiver, Clamp 30
Communication - FlexRay Transceivers NCV7383 Clamp 15 compliant with FlexRay3.0.1. spec. FlexRay® Transceiver, Clamp 15
Communication - CAN Transceivers NCV7340 Improved drop-in replacement o AMIS-42665 CAN Transceiver, High Speed, Low Power
Communication - CAN Transceivers AMIS-42665 Lower cost CAN Transceiver, High Speed, Low Pow
Communication - CAN Transceivers NCV7441 Two channel Dual CAN Transceiver, High Speed, Low Power
Communication - CAN Transceivers NCV7356 Lower system cost, lower rate CAN Transceiver, Single Wire
Communication - ESD Protection SZNUP1128
175°C TJ(max) − Rated for High Temperature, AECQ-101 Qualified, IEC
61000−4−2 (ESD): Level 4, IEC 61000−4−4 (EFT): 50 A (5/50 ns), IEC 61000−4−5
(Lighting) 3.0 A (8/20 s) Single Line, +175°C TJ(MAX) LIN Bus Protector
Communication - ESD Protection SZNUP2128
175°C TJ(max) − Rated for High Temperature, AECQ-101 Qualified, IEC
61000−4−2 (ESD): Level 4, IEC 61000−4−4 (EFT): 50 A (5/50 ns), IEC 61000−4−5
(Lighting) 3.0 A (8/20 s) Dual Line, +175°C TJ(MAX) CAN Bus Protector
Communication - ESD Protection SZNUP2115
150°C TJ(max)- ESD Protection, Low Capacitance, AECQ-101 Qualified, IEC
61000−4−2 (ESD): Level 4, IEC 61000−4−4 (EFT): 50 A (5/50 ns), IEC 61000−4−5
(Lighting) 3.0 A (8/20 s) ESD protection for FlexRay transceiver
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