SMD Type

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Transistors

PNP TransistorsFZT953 (KZT953)

■ Features ● Collector Current Capability IC=-5A

● Collector Emitter Voltage VCEO=-100V

● Complementary to FZT853

1.80

(max

)

0.02

~ 0

.1

0.70±0.1

4.60 (typ)

10 。

7.0±

0.3

3.50

±0.2

6.50±0.2

3.00±0.1

2.30 (typ)

SOT-223 Unit:mm

1.Base 2.Collector3.Emitter

4.Collector

4

1 2 3

0.250

Gauge Plane

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit

Collector - Base Voltage VCBO -140

Collector - Emitter Voltage VCEO -100

Emitter - Base Voltage VEBO -6

Collector Current - Continuous IC -5

Collector Current - Pulse ICP -10

Collector Power Dissipation PC 3 W

Junction Temperature TJ 150

Storage Temperature range Tstg -55 to 150

V

℃

A

SMD Type

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Transistors

PNP TransistorsFZT953 (KZT953)

■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit

Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -140

VCER Ic= -1uA，RB≤1KΩ -140

VCEO Ic= -10 mA， IB=0 -100

Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6

VCB= -100 V , IE=0 -50 nA

VCB= -100 V , IE=0 ,Ta = 100℃ -1 uA

VCB= -100 V , IE=0 -50 nA

VCB= -100 V , IE=0 ,Ta = 100℃ -1 uA

Emitter cut-off current IEBO VEB= -6V , IC=0 -10 nA

IC=-100mA, IB=-10mA (Note.1) -50

IC=-1 A, IB=-100mA (Note.1) -115

IC=-2 A, IB= -200mA (Note.1) -220

IC=-4 A, IB=-400mA (Note.1) -420

Base - emitter saturation voltage VBE(sat) IC=-4 A, IB=-400mA (Note.1) -1.17

Base-Emitter Turn-On Voltage VBE(on) VCE= -1V, IC= -4A (Note.1) -1.16

hFE(1) VCE= -1V, IC= -10mA 100

hFE(2) VCE= -1V, IC= -1A 100 300

hFE(3) VCE= -1V, IC= -3 A 50

hFE(4) VCE= -1V, IC= -4 A 30

hFE(5) VCE= -1V, IC= -10 A 15

ton 110

toff 460

Collector output capacitance Cob VCB= -10V, f=1MHz (Note.1) 65 pF

Transition frequency fT VCE= -10V, IC= -100mA,f=50MHz 125 MHz

Switching Times IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V ns

ICER Collector-emitter cut-off current (R≤1KΩ)

Collector-emitter saturation voltage VCE(sat)

DC current gain (Note.1)

V

Collector-base cut-off current ICBO

Collector- emitter breakdown voltage

mV

V

Note.1: Pulse width=300 us. Duty cycle ≤ 2%

SMD Type

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Transistors

PNP TransistorsFZT953 (KZT953)

■ Typical Characterisitics

-55°C +25°C +100°C +175°C

+100°C +25°C -55°C

021.010.0 1 10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

021.010.0 1 10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

021.010.0 1 10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

021.010.0 1 10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

021.010.0 1 10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

VCE(sat) v IC

IC - Collector Current (Amps)

VCE(sat) -

(Vol

ts)

Tamb=25°C

VCE(sat) v IC

IC - Collector Current (Amps) V

CE(sat) -

(Vol

ts)

-55°C +25°C +175°C

-55°C +25°C +100°C +175°C

IC - Collector Current (Amps) IC - Collector Current (Amps)

hFE v IC V BE(sat) v IC

IC - Collector Current (Amps)

VBE(on) v IC

hFE -

Nor

mal

ised

Gai

n

VBE(sat) -

(Vol

ts)

VBE -

(Vol

ts)

IC -

Col

lect

or C

urre

nt (A

mps

)

IC/IB=10IC/IB=10

IC/IB=50

IC/IB=10VCE=1V

VCE=1V

300

200

100

h FE

- Typ

ical

Gai

n

VCE - Collector Voltage (Volts)

Safe Operating Area

0011.0 1 100.01

0.1

1

10Single Pulse Test at Tamb=25°C

D.C. 1s 100ms 10ms

1.0ms 0.1ms

0.001 0.001

0.001

0.001