DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
TRION DRIE SYSTEM OPERATING MANUAL Version: 2.0 June 2013
UNIVERSITY OF TEXAS AT ARLINGTON
Nanofabrication Research and Teaching
Facility
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
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TABLE OF CONTENTS 1. Introduction………………………………………………………..3
1.1 Scope of Work…………………………… ……….......3
1.2 Description………………………………… …….…….3
1.3 Safety……………………………………… … ..………3
2. Requirements……………………………………..….….………...4
2.1 Training…………………………………….…….…….…4
2.2 Restrictions…………………………………………,…...4
2.3 System Checks…………………………….……....……5
3 Operating Procedure ………………………..…..……..…….....8
3.1 Automatic Process Control….………….…....…..….…8
3.2 Emergency Abort Procedure...……………….…..…...16
4 Sample Recipes…….………………………..…..……..…….....17
5 Nanofab Response Plan………………………………………..19
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1 INTRODUCTION
1.1 Scope These procedures apply to the TRION DRIE system. All maintenance should follow the procedures set forth in the manufacturer’s maintenance and operations manuals. This document is for reference only. Personnel should be trained by authorized staff before operating this equipment.
1.2 Description The DRIE (deep reactive ion etcher) anisotropically etches very high aspect ratio vertical trenches and through-the-wafer etches in Silicon; and fast selective etching of patterned Oxide and Nitride wafers.
1.3 Safety 1.3.1 This machine uses Sulfur Hexafluoride (SF6), Tetrafluoromethane (CF4) Oxygen
and Argon which can form toxic compounds with Oxygen or in high concentrations can be asphyxiates. The process gases are normally pumped out of system; if the process pressure is not being maintained or system cannot reach base pressure notify NanoFAB staff immediately.
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1.3.2 This machine uses RF frequency power. DO NOT operate this machine with any RF component enclosures/panels open.
1.3.3 This machine has an EMO (Emergency Off) switch/button mounted on the left side panel. The EMO switch should be pressed only in an emergency. An emergency would be fire, smoke, electrocution hazards, and an injury to anyone using this particular piece of equipment. If the EMO is pressed notify NanoFAB staff immediately.
1.3.4 Keep your fingers clear of the Load lock lid when loading/unloading wafers. Do not place anything on the Load lock lid.
2 REQUIREMENTS
2.1 Training
You must be a qualified user on DRIE. The etcher is for 4” diameter, greater than 450um thick Silicon, SOI, Thermal Oxide, Sputter and PECVD Oxide and Nitride wafers. Pieces (Si, SOI, SiO2, Si3N4) and 1”- 3” diameter wafers can be etched only if bonded to a 4”
wafer (bond with a drop silver paint, MUNG II paste or other approved bonding material).
2.2 Restrictions
2.2.1 No METAL coated or patterned wafers and no GLASS SLIDES from any vendor are allowed to be etched. Metal carrier wafers are also not allowed. No METAL’S or GLASS SLIDES allowed in the etch chamber.
2.2.2 All wafers (etch and carrier) must not have any edge chips, nicks, or cracks. The backside must be clean and flat (no warps, dimples, defects).
2.2.3 Through-the-wafer etches require an adequate etch stop thickness on the backside of the wafer or the etch wafer needs to be bonded (photo resist bonded) to a carrier wafer prior to breaking through the Silicon to ensure proper UNLOAD sequence. Contact NanoFAB staff before etching through a wafer or when etching thin wafers ( < 450um thick).
2.2.4 Masking Materials Allowed: Oxide hard masks (Sputter, Thermal or PECVD), Nitride hard mask (Sputter or PECVD), positive resist mask (Shipley 1.3, 1.8, AZ 9620; PR1 resist) and negative resist mask (SU8 and others). NanoFAB staff approval for other masking materials is required.
2.2.5 Masking Materials NOT Allowed: NO METAL MASKS or Glass Slides are allowed.
2.2.6 A wafer needs to be loaded for all runs. If etching pieces or chamber plasma clean use one of the dedicated wafers located by the machine.
2.2.7 TRION DRIE is available 7 days a week / 24 hours a day. 2.2.8 Read any posted NanoFAB Engineering Change Notices (ECN) for any
hardware, process or safety changes before running the tool. 2.2.9 Do not leave the DRIE for more than 30 minutes at a time during a run. The user must
check the status every 30 minutes to verify there are no alarms. 2.2.10 Etch recipes other than TRION or NanoFAB recipes can be run with staff
approval. Save these other recipes to the Floppy DRIVE:
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The floppy saves recipes to the dedicated NanoFAB-DRIE USB memory stick (E :\) and not the system hard drive. NanoFAB memory stick must not be removed or taken outside NanoFAB.
2.2.11 Etch recipes 150m Trench, 90m Trench, 50m Trench, Deep_Sil, 300s Si Condition, Polyimide recipes; and any SF6 containing recipes can ONLY be run
from Friday (3pm) through Wednesday (8am). 2.2.12 Oxide and Nitride etch recipes are reserved for Wednesday (12pm) to Friday
(12pm).
Figure 2.2
2.2.13 Users are not allowed to VENT or OPEN the Main Chamber Lid. If there is process or hardware problem that requires chamber venting notify NanoFab staff to perform a chamber vent sequence.
2.3 System Checks 2.3.1 Check to ensure the LYTRON chiller temperature display is 17°C± 5°C, DI
water level is between the markers and there are no alarms displayed. The Lytron chiller is a closed loop DI water system that controls the temperature of the process chamber lid, cathode, RF generators and turbo pump. If low level alarm is ON it is OK to add DI water to the chiller; for all other alarms call NanoFAB staff.
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Figure 2.3.1
2.3.2 Check to ensure there is no water leaking on the floor coming from the LYTRON chiller.
Figure 2.3.2
2.3.3 Check to ensure the BUSCH chamber pump is on. Touch the pump top cover, if it is HOT call NanoFab staff . The top cover should be vibrating and be slightly above room temperature. Check there is no water leaking from pump water line connections. The city water supply to this pump should always be ON.
2.3.4 Check to ensure the ADIXEN load lock pump is on. The pump top cover should be vibrating. ( This is a mandatory check to see if the Load Lock pump is ON ! )
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Figure 2.3.4
2.3.5 Check to ensure process gas bottle delivery pressures are as follows:
CF4 10-20 psi
SF6 10-20 psi O2 10-20 psi Ar 10-20 psi He 10-20 psi
(The following DRIE System checks are in the clean room side of system)
2.3.6 Check to ensure the ICP (high power top electrode) fan is on.
Figure 2.3.5 Figure 2.3.6
2.3.7 Check to ensure the ICP water flow meter is > 1 GPM and there are no water leaks.
2.3.8 Check to ensure the RIE (bottom electrode) water flow meter is > 20 GPH and there are no water leaks.
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Figure 2.3.7 Figure 2.3.8
2.3.9 Check to ensure the Turbo Pump Controller is on and @ 19,800 rpm. 2.3.10 Check to ensure the Matching Network toggle switch is set to AUTO.
Figure 2.3.9 Figure 2.3.10
3 OPERATING PROCEDURE
3.1 Automatic Process Control
3.1.1 When you first approach the system you may see one of these computer touch screen or MS Windows screen displays :
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Screen (I) Screen (II)
Screen (III) Screen (IV)
If you see Screen (I)
Check chamber pressure is 0-2 mtorr, if the pressure is higher contact NanoFAB staff. If the chamber pressure is ≤ 2 mtorr press Cancel to get to screen iv) Main Menu (Load Wafer).
If you see Screen (II)
Press Unload Wafer and wait for Unload Wafer Sequence to complete then press OK to get to screen iv) Main Menu (Load Wafer).
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(Wait for sequence to end) ( Unload Wafer Sequence finished)
If you see Screen (III)
Press shortcut to Mini2 icon and wait for system hardware to initialize to get to screen iv) Main Menu (Load Wafer).
Figure: Mini2 Icon
3.1.2 In Main Menu (Load Wafer) if the chamber pressure has not been checked press Stand By, wait for system to go into Stand By mode and check the chamber pressure is OK. If pressure is OK press cancel to go to Main Menu and press Load Wafer. The Load lock lid will now open. Be sure not to place anything on the Load lock lid.
3.1.3 Place your 4” wafer or bonded samples on a 4” carrier wafer on the robot arm. The wafer should be placed such that the rounded wafer edge mates with the curved robot spacer plate. After the wafer is loaded press OK and keep your fingers clear as the Load lock lid closes.
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Figure 3.1.2 Figure 3.1.3
3.1.4 Wait for Load Wafer sequence to finish. Do not press the Abort unless an emergency arises. If you want to remove your wafer wait until the Load Wafer sequence finishes and then press Unload Wafer to retrieve your wafer.
Figure 3.1.4
3.1.5 In Main Menu screen press Files to go to Recipes screen. A list of recipes from the hard drive (HD) is shown. Touch the HD process recipe you will run or retrieve the your recipe from the dedicated NanoFAB-DRIE USB memory stick by touching the Floppy Drive button to access your staff approved recipes. Once you have selected a recipe to run the recipe name will appear at top right under the Current Recipe heading. To save a recipe touch save button and only save to the dedicated NanoFAB-DRIE USB memory stick (E: \). Do not save recipes to the HD; this space is reserved for NanoFAB recipes. After you have loaded a recipe to run or saved a recipe touch Exit to go to Main Menu. Now the Main Menu has two addition buttons Manual Process Control and Automatic Process Control
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Figure 3.1.5
3.1.6 In Main Menu if you are ready to start etching press Automatic Process Control. In this mode of control the computer controls the entire etching sequence (up to15 steps). The only button active is the Abort button. If the Abort button is pressed all gases and power will shut off and return to the Main Menu (Wafer Unload) screen. Always etch the wafer in Automatic Process Control mode and NOT in Manual Process Control. After the etch recipe sequence is completed (programmed etch time counts down) the process completed message will appear. Touch the OK button and then press Unload Wafer to start the unload sequence to retrieve your wafer.
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Figure 3.1.6
3.1.7 In Main Menu (Manual/Automatic) if you need to view the process recipe parameters, change recipe set points or create a new recipe touch the Manual Process Control button. The Manual Process Control screen displays all process variable set points and the corresponding reads. To change the value of a process variable touch on that variable’s set point value box. A keypad will pop up for numeric data entry for the variable. Any changes made to the process recipe will be kept until a new recipe is loaded from HD or floppy drive. In order to permanently save your changes to the current recipe you need to touch Exit button to go back and touch Files and then press save button. Do NOT change process variables for TRION or NanoFAB recipes, and remember to save your recipe to the dedicated USB memory stick/ floppy disk ( E:\). Do not save your recipes to the hard drive. Etch recipes other than TRION or NanoFAB recipes can be run with staff approval. If you have questions about process windows and workable variable set points contact NanoFAB staff.
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Figure 3.1.7
3.1.8 After you are done modifying or viewing a recipe touch Exit to return to Main Menu. To permanently save changes to the current recipe on the dedicated USB- floppy touch Files and then press Save button ( E:\ ) or to start the etch sequence touch Automatic Process Control. After the etch sequence is completed the process completed message will appear. Touch the OK button to return to Main Menu (Unload Wafer) screen.
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Figure 3.1.8
3.1.9 To unload your wafer touch Unload Wafer and wait for the Unload Sequence Finished message to display. Remove your wafer from the load lock then touch the OK button. Keep your fingers clear as the load lock lid closes and the system returns to Main Menu.
Figure 3.1.9
3.1.10 When you are finished etching yours wafers load dedicated plasma clean wafer (located by the machine) and run CLEAN recipe time for 3/4 of the total etch time used. This is required for all processes, the only exception is for very short etch
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times < 20 seconds. After unloading the wafer leave the system in standby mode by touching the Standby button.
Figure 3.1.10
3.1.11 Enter the required information in the logbook. One logbook entry per wafer etched.
3.2 Emergency Abort Procedure 3.2.1 Reasons to consider aborting a run: wrong recipe, wrong recipe set points, set
point reads not being met, high backside He flow ( >3.5).
3.2.2 Flow Alarm occurs during processing or Flow Alarm is RED on the Manual Process Control screen.
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Figure 3.2.2
3.2.3 Reasons to ABORT : After 10-15 seconds the Reflected power > 5% of forward power / Unstable plasma
3.2.4 If you need to abort the process touch the Abort button. All gases and power will shut off and return to Main Menu (Unload Wafer). Touch Unload Wafer to retrieve your wafer. If the Abort is due to equipment malfunction notify NanoFAB staff and note it in the logbook.
3.2.5 If you abort the process due to high backside He flow look through the chamber view port window using a flashlight. If the wafer is still on the chuck unload the wafer using Unload Wafer button. Try another wafer, if problem continues notify NanoFAB staff and note it in the logbook.
3.2.6 If the wafer is NOT on the chuck or you cannot determine where the wafer is leave the wafer in the chamber, notify NanoFAB staff and note it in the logbook that a wafer is stuck in the chamber.
3.2.7 For any fault messages (pressure, gas flow, temperature, water flow) recheck section 2.3 System Checks for possible cause, notify NanoFAB staff and note it in the logbook.
3.2.8 For various machine problems such as wafer stuck in the chamber, broken wafer, scratches on wafer notify NanoFAB staff and note it in the logbook.
3.2.9 For various wafer problems such as under etched wafers, over etched wafers, black silicon, reticulated resist (burned resist) verify all the recipe parameters are correct and monitor parameters during the process. If problem persists notify NanoFAB staff and note it in the logbook.
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4 SAMPLE RECIPES
150m trench
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 50 Dr. Zhou 25
Pressure read 0
ICP Power set 3000
ICP Power read
ICP REF read
RIE Power set 50
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 60 3000
Over etch read
He Presssure set 5 5
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 50 50
O2 read
SF6 set 50 50
SF6 read
Ar set 200 200
Ar read 2 2
He set 200 200
He read 2 2
CHF3 set
CHF3 read
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300s Si Condition
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 50
Pressure read
ICP Power set 3000
ICP Power read
ICP REF read
RIE Power set 50
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 60 300
Over etch read
He Presssure set 5 5
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 50 50
O2 read
SF6 set 50 50
SF6 read
Ar set 200 200
Ar read 2 2
He set 200 200
He read 2 2
CHF3 set
CHF3 read
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50m trench
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 50 Dr. Magnusson 19
Pressure read
ICP Power set 3000
ICP Power read
ICP REF read
RIE Power set 50
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 60 1500
Over etch read
He Presssure set 5 5
He Pressure read
He flow read
CF4 set
CF4 read
O2 set 50 50
O2 read
SF6 set 50 50
SF6 read
Ar set 200 200
Ar read 2 2
He set 200 200
He read 2 2
CHF3 set
CHF3 read
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90m trench
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 50 Dr. Moon 3
Pressure read Dr. Magnusson 2
ICP Power set 3000
ICP Power read
ICP REF read
RIE Power set 50
RIE Power read
RIE REF read
DC Bias read
Over etch set 60 1800
Over etch read
He Presssure set 5 5
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 50 50
O2 read
SF6 set 50 50
SF6 read
Ar set 200 200
Ar read 2 2
He set 200 200
He read 2 2
CHF3 set
CHF3 read
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CLEAN
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 100 250 Dr. Zhou 188
Pressure read Dr. Zeynep Butler 88
ICP Power set Dr. Koh 36
ICP Power read Dr. Don Butler 12
ICP REF read Dr. Moon 10
RIE Power set 150 Dr. Magnusson 133
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 120 20
Over etch read
He Presssure set 4 4
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 100
O2 read
SF6 set
SF6 read
Ar set 250
Ar read 2 2
He set
He read 2 2
CHF3 set
CHF3 read
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DEEP_SIL
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 50 Dr. Koh 7
Pressure read 3000 Dr. Don Butler 13
ICP Power set Dr. Magnusson 22
ICP Power read Dr. Zeynep Butler 34
ICP REF read
RIE Power set 50
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 60 600
Over etch read
He Presssure set 5 5
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 50 50
O2 read
SF6 set 50 50
SF6 read
Ar set 200 200
Ar read 2 2
He set 200 200
He read 2 2
CHF3 set
CHF3 read
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Jason1
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 75 150
Pressure read
ICP Power set 1000
ICP Power read
ICP REF read
RIE Power set 200
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 75 20
Over etch read
He Presssure set 5
He Pressure read
He flow read 0.1 0.1
CF4 set 50
CF4 read
O2 set 10
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set 100
He read 2 2
CHF3 set
CHF3 read
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Jason_T1
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 20
Pressure read
ICP Power set 3500
ICP Power read
ICP REF read
RIE Power set 40
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 600
Over etch read
He Presssure set 5
He Pressure read
He flow read 0.1 0.1
CF4 set 50
CF4 read
O2 set
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set
He read 2 2
CHF3 set
CHF3 read
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JM_clean
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 100 150 Dr. Magnusson 10
Pressure read
ICP Power set
ICP Power read
ICP REF read
RIE Power set 300
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 300 20
Over etch read
He Presssure set 5 5
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 100
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set 100
He read 2 2
CHF3 set
CHF3 read
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Ox_nit
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 25 150 Dr. Zeynep Butler 23
Pressure read
ICP Power set 3500
ICP Power read
ICP REF read
RIE Power set
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 600 20
Over etch read
He Presssure set 5
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set 70
He read 2 2
CHF3 set
CHF3 read
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Polymer
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 15
Pressure read
ICP Power set 4000
ICP Power read
ICP REF read
RIE Power set 75
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 600
Over etch read
He Presssure set 6
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 70
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set
He read 2 2
CHF3 set
CHF3 read
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Ram_oxide
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 25 Dr. Koh 68
Pressure read
ICP Power set 3000
ICP Power read
ICP REF read
RIE Power set 50
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 300
Over etch read
He Presssure set
He Pressure read
He flow read 0.1 0.1
CF4 set 50
CF4 read
O2 set
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set
He read 2 2
CHF3 set
CHF3 read
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SF6RUN 60s
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 50
Pressure read
ICP Power set 500
ICP Power read
ICP REF read
RIE Power set 50
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 10 30
Over etch read
He Presssure set 5 5
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set
O2 read
SF6 set 20 20
SF6 read
Ar set 200 200
Ar read 2 2
He set 200 200
He read 2 2
CHF3 set
CHF3 read
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SF6RUN1
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 50
Pressure read
ICP Power set 2000
ICP Power read
ICP REF read
RIE Power set 50
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 10 10
Over etch read
He Presssure set 5 5
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 10 10
O2 read
SF6 set 20 20
SF6 read
Ar set 200 200
Ar read 2 2
He set 200 200
He read 2 2
CHF3 set
CHF3 read
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TRION DEEP RIE
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 150
Pressure read
ICP Power set 3000
ICP Power read
ICP REF read
RIE Power set 50
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 900 60
Over etch read
He Presssure set 5 5
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 50
O2 read
SF6 set 50
SF6 read
Ar set 200
Ar read 2 2
He set 200 200
He read 2 2
CHF3 set
CHF3 read
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TRIONNITRIDE
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 75 150
Pressure read
ICP Power set 4000
ICP Power read
ICP REF read
RIE Power set 100
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 300 60
Over etch read
He Presssure set 5 5
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 10
O2 read
SF6 set 70
SF6 read
Ar set 200
Ar read 2 2
He set 200 100
He read 2 2
CHF3 set
CHF3 read
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TRIONOXIDE
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 250 150 Dr. Magnusson 2
Pressure read
ICP Power set 3000
ICP Power read
ICP REF read
RIE Power set 300
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 300 60
Over etch read
He Presssure set 5 5
He Pressure read
He flow read 0.1 0.1
CF4 set 90
CF4 read
O2 set 10
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set 90 100
He read 2 2
CHF3 set
CHF3 read
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10min_Dsi_Murali
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 150
Pressure read
ICP Power set 3000
ICP Power read
ICP REF read
RIE Power set 50
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 3000 30
Over etch read
He Presssure set 5
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 50
O2 read
SF6 set 50
SF6 read
Ar set 200
Ar read 2 2
He set 200 80
He read 2 2
CHF3 set
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
36
1_KJL_TRIONOXIDE
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 250 150
Pressure read
ICP Power set
ICP Power read
ICP REF read
RIE Power set 300
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 300 60
Over etch read
He Presssure set 5 5
He Pressure read
He flow read 0.1 0.1
CF4 set 90
CF4 read
O2 set 10
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set 90 100
He read 2 2
CHF3 set
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
37
1_MOIN_SU8
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 100 150 Dr. Don Butler 3
Pressure read
ICP Power set 3000
ICP Power read
ICP REF read
RIE Power set 200
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 1800 20
Over etch read
He Presssure set 4 4
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 80
O2 read
SF6 set
SF6 read
Ar set 200
Ar read 2 2
He set 200 70
He read 2 2
CHF3 set
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
38
1_Si_Zhou
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 150 Dr. Zhou 45
Pressure read Dr. Magnusson 7
ICP Power set 30
ICP Power read
ICP REF read
RIE Power set 30
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 180 20
Over etch read
He Presssure set 2
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 10
O2 read
SF6 set 20
SF6 read
Ar set
Ar read 2 2
He set 10 70
He read 2 2
CHF3 set
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
39
Bhargav_Nitride
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 30 150 Dr. Zeynep Butler 9
Pressure read
ICP Power set 3500
ICP Power read
ICP REF read
RIE Power set 30
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 60 30
Over etch read
He Presssure set 5
He Pressure read
He flow read 0.1 0.1
CF4 set 30
CF4 read
O2 set
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set 80
He read 2 2
CHF3 set
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
40
bhp-O2 act
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 100
Pressure read
ICP Power set 3500
ICP Power read
ICP REF read
RIE Power set 30
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 120 60
Over etch read
He Presssure set 3
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 20
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set 50
He read 2 2
CHF3 set
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
41
CHF3 TEST
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50 150 Dr. Magnusson 28
Pressure read
ICP Power set
ICP Power read
ICP REF read
RIE Power set 200
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 120 20
Over etch read
He Presssure set 4 4
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 2
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set 80
He read 2 2
CHF3 set 50
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
42
CLEAN-Ram
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 100 150
Pressure read
ICP Power set
ICP Power read
ICP REF read
RIE Power set 150
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 300 20
Over etch read
He Presssure set
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 100
O2 read
SF6 set
SF6 read
Ar set
Ar read 2 2
He set 100
He read 2 2
CHF3 set
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
43
jae
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 50
Pressure read
ICP Power set 3000
ICP Power read
ICP REF read
RIE Power set 50
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 600
Over etch read
He Presssure set 6
He Pressure read 0.1 0.1
He flow read
CF4 set
CF4 read
O2 set 40
O2 read
SF6 set 50
SF6 read
Ar set 200
Ar read 2 2
He set 200
He read 2 2
CHF3 set
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
44
JU_Si
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 200 150
Pressure read
ICP Power set
ICP Power read
ICP REF read
RIE Power set 150
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 60 20
Over etch read
He Presssure set 2
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 10
O2 read
SF6 set 30
SF6 read
Ar set
Ar read 2 2
He set 50
He read 2 2
CHF3 set
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
45
KJ_CHF3_1
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 30 150 Dr. Magnusson 5
Pressure read
ICP Power set
ICP Power read
ICP REF read
RIE Power set 200
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 480 20
Over etch read
He Presssure set 4 4
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set
O2 read
SF6 set
SF6 read
Ar set 38
Ar read 2 2
He set 80
He read 2 2
CHF3 set 12
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
46
MJU_Si
Step 1
Step 2
Research group
Usage frequency
(no. times)
Pressure set 150 150 Dr. Magnusson 6
Pressure read
ICP Power set
ICP Power read
ICP REF read
RIE Power set 150
RIE Power read
RIE REF read
DC Bias read -1 -1
Over etch set 120 20
Over etch read
He Presssure set 2
He Pressure read
He flow read 0.1 0.1
CF4 set
CF4 read
O2 set 10
O2 read
SF6 set 30
SF6 read
Ar set
Ar read 2 2
He set 80
He read 2 2
CHF3 set
CHF3 read
DOCUMENT: TRION DRIE STANDARD OPERATING PROCEDURE Version: 2.0
47
5 NANOFAB RESPONSE PLAN
NANOFAB Research and Teaching Facility
500 South Cooper Street University of Texas at Arlington
Hazardous Material Gas Release Response Procedure for UTA
Police Department and EH&S Staff
1. When the UTA Police Communications Center receives a Fire Alarm for
NANOFAB, the dispatcher shall check the alarm received and verify if it is a Fire
Alarm or a Gas Detection Alarm.
2. Upon verification of a GAS alarm, the dispatcher shall advise the responding police
units that the alarm is a Hazardous Material Response call and Officers are not to
enter the building for any reason. A Police Supervisor shall be dispatched to the
scene.
3. The Arlington Fire Department shall be dispatched via a 911 call for a Hazardous
Material Gas Leak at UTA NANOFAB building, 500 South Cooper Street.
4. The Responding Officer(s) shall try to respond from the upwind direction. (Look for
wind direction by observing tree leaves, flags or banners in the area.) A wind sock
will be installed on the South East corner of the roof to verify wind direction.
5. The responding Police Supervisor will establish a Command Post at an appropriate
location based on the conditions at the scene.
6. The first responding officer shall verify if the orange strobe lights on the outside of
the building have been activated and listen to the emergency message broadcast on
the outside speakers to confirm a Gas Detection Alarm. Once field confirmation is
made, the responding police units shall set up an inner perimeter. No one is to enter
the building until the arrival of the Arlington Fire Department.
7. Any occupants of the building that may have been exposed to the gas shall be
directed to a designated location (Decon Site) upwind from the building (location to
be determined based on conditions at the time) so paramedics can evaluate their
condition. If any victims are transported to a Hospital, Arlington Fire Department
shall obtain the MSDS for the gas released from the Knox Cabinet on the outside of
the building and provide to the Paramedic. (Not installed yet. Police to provide until
installed)
8. Mr. Jim Florence, the NANOFAB Manager, or a staff member shall brief the Police
Supervisor or first arriving police unit the known facts relative to the incident. The
Officer shall relay the information to dispatch so Arlington Fire Department can be
updated while responding.
9. EH&S staff shall be notified during working hours to respond to the Command Post
with the Police to control the scene until the arrival of the Fire Department. The
Incident Command and Unified Command Systems will be utilized to manage the
incident.
10. After normal working hours the on-call EH&S person shall be notified to respond.
