TRION MINILOCK-PHANTOM ICP/RIE STANDARD OPERATING PROCEDURE · TRION MINILOCK-PHANTOM ICP/RIE...

TRION MINILOCK-PHANTOM ICP/RIE

STANDARD OPERATING PROCEDURE

Purpose of this Instrument: Reactive Ion Etch (RIE) tool is used to etch materials such as silicon oxide, silicon

nitride, GaN, and chromium, as well as strip photoresist or other organic materials. The inductively coupled plasma

(ICP) can be used to increase etch rates and anisotropy profiles of etch processes.

Location: Engineering Sciences Building (ESB) G73 Cleanroom

Primary Staff

Contact:

Harley Hart

(412) 443-1514 (M)

(304) 293-5847 (O)

Office: White Hall 409

[email protected]

Secondary Staff

Contact:

Dr. Weiqiang Ding

(304) 293-9683 (M)

(304) 685-1938 (O)

Office: ESB G75D

[email protected]

The Shared Research Facilities are operated for the benefit of all researchers. If you encounter any

problems with this piece of equipment, please contact the staff member listed above immediately. There

is never a penalty for asking questions. If the equipment is not behaving exactly the way it should, contact

a staff member.

WARNING: This system uses Chlorine and Boron Trichloride gases. Both gases are corrosive to the lungs

if breathed. Do not open the chamber to service it without contacting a Shared Research Facilities staff

member. Opening the chamber without following the proper evacuation sequence or by-passing the

safety interlocks may release these corrosive gases to the room, exposing you and anyone else working

in the area. Do not attempt to open the loadlock if the robot arm is malfunctioning. The loadlock is not

isolated from the main chamber when the robot arm is extended. Opening the load lock may release

corrosive gases to the room.

ESB CR Trion Minilock Phantom III ICP/RIE Standard Operating Procedure

Revised: 02.03.16

1

INSTRUMENT START UP____________________________

1. Reserve the equipment in CORES and login using the CORES kiosk in the cleanroom

gowning room.

NOTE: The ICP/RIE should be powered at all times. If the tool is OFF or has no power,

contact a Shared Research Facilities staff member.

2. The tool should be left in STANDBY MODE when not in use and the monitor should display a screen shown in the Figure 1. The image below should be displayed on the monitor. If this screen is not displayed, press the STANDBY MODE icon and wait until all processing lines are evacuated prior to processing. It is important to clear the gas lines before starting a process to eliminate the chance of contamination. If the software has been closed, click on the PLC 1.21 icon on the Desktop to open the software and press the STANDBY MODE icon. Then wait until all the processing lines are evacuated prior to processing.

Figure 1: Standby Mode Screenshot

3. Verify the following equipment parameters and record them in the log book:

Loadlock Pressure: should be ≤ 5 mT

Chamber Pressure: should be between 0.0 – 0.2 mT


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NOTE: If the loadlock pressure does not reach set-point, stop and contact a Shared

Research Facilities staff member as there is a problem with the vacuum system.

NOTE: If the chamber pressure does not reach 0.2 mT, then check the Turbo Controller (see Figure 2) to verify there are no alarms and the turbo pump is operating correctly. The turbo pump speed should be 560 Hz and the Power and Normal indicators should be green. If any of the indicators are RED, the turbo pump has an alarm and a Shared Research Facilities staff member needs to be contacted.

Figure 2: Example of turbo controller failure alarm

Figure 3: Main process screen

4. To exit the Standby Mode screen and load a sample, press the CANCEL icon. The computer will now display the main process menu as shown in Figure 3. It is recommended that users perform an oxygen clean of the chamber before their first process of the day or when changing the process recipe. This will clean the chamber, remove contaminants from previous processes, and assist in obtaining consistent etch rates.


Revised: 02.03.16

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OXYGEN CHAMBER CLEAN SOP_______________________

NOTE: A carrier wafer is pre-loaded within the loadlock chamber – see Figure 4. Please use this wafer to run the CLEAN_O2_SRF recipe before sample processing.

Figure 4: Carrier wafer pre-loaded in the

loadlock chamber

NOTE: A carrier wafer should be located within the loadlock chamber and if there is no wafer visible, please check Wafer Loaded status on the main screen.

Automatic Single Process control: This mode is the preferred mode to be used when

processing standard runs. The user is in control of wafer transferring. This mode is to be

used for well-established processes as the user cannot modify parameters during

execution. The user can stop the process at any time in this mode by pressing the ABORT

button on the processing screen.

1. Press the LOAD/EDIT RECIPE, to begin the process.

2. Select the RECIPE FROM DISK button on the touchscreen and the Recipe Parameters

window will appear – see Figure 5. Choose the CLEAN_O2_SRF recipe and verify the

process time is set to 10 minutes. If it is not, press on the Process Time parameter

button on the touchscreen, change to 10 minutes, and then choose Save Recipe to

Disk.


Revised: 02.03.16

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Figure 5: Clean O2 Recipe screenshot

3. After verifying the desired recipe parameters,

choose EXIT on the bottom right corner of the

screen. This runs a macro in the background

that downloads the recipe parameters for the

current run. On the main process screen, verify

the recipe names in the Recipe Control section

are the same before beginning a process to

ensure the proper recipe is being run – see

Figure 6.

Figure 6: Recipe Control section on main process

screen

4. To load a sample, press the LOAD WAFER icon on the processing screen. Press the

VENT Lock First icon shown in Figure 7 to open lid of the loadlock chamber.

NOTE: If the wafer is pre-loaded in the loadlock chamber, then press the Do NOT Vent

and proceed to the step 8.

Figure 7: Loadlock vent screenshot

5. The tool will purge the loadlock with nitrogen and bring the loadlock to atmosphere.

To stop the vent for any reason, press the CANCEL icon.


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6. Inspect the silicon wafer present on the loading

arm. If replacing a new wafer, place it on the

loading arm as shown in Figure 8.

Figure 8: Silicon wafer placed on the loading arm

WARNING: The wafer is held in place by an electrostatic chuck. A full wafer is required

to work properly. Any contamination on the backside of the carrier wafer will cause the

electrostatic chuck to fail (Figures 9 and 10). Chuck failure will result in helium spikes in

the plasma, as the helium gas used for backside cooling will leak into the chamber.

Figure 9: Example of an unclean carrier wafer

Figure 10: Example of a contaminated backside of

the carrier wafer

Visually inspect the wafer during a process run by looking through the chamber viewport

on the right hand side of the tool. If the wafer is moving then the electrostatic chuck has

failed! This may cause power spikes or gas pressure spikes in your process. Helium may

also alter the concentration of the gases and change the etch rate of the process, so use

only one side of the silicon carrier wafer to prevent residue from being left behind on

electrostatic chuck. Please contact a shared facilities staff member so the chuck can be

cleaned.


Revised: 02.03.16

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Do not use carbon tabs to mount samples as it will not be able to be removed from the

silicon carrier wafer.

7. Do not manually close the lid, but press OK after placing the sample on the end

defector. The lid of the loadlock will close and the following sample loading events will

occur:

Evacuation of the loadlock

Transfer of the sample to the process chamber

Processing of the sample according to the CLEAN_O2_SRF recipe by turning on

gases and RF powers

Transfer of the sample back into the loadlock

Venting of the loadlock

8. When prompted by the WAFER LOAD SEQUENCE screen, press OK to proceed. The

WAFER LOADED icon will turn green.

9. Perform a Helium Flow Check (see Helium Flow Check section).

WARNING: Operating the system with a Helium Flow of above 1.0 sccm will cause

inconsistent etch rates and damage to electrostatic chuck. If you have any questions

concerning this, please contact a Shared Research Facilities Staff member.

10. When in the MAIN PROCESS CONTROL screen, hit the Automatic Single Process button to execute the process with the set parameters. The chamber status screen appears as seen in Figure 11. Monitor the system to ensure the process is properly executed according to the set parameters.

Figure 11: Chamber Status Screen displaying the set and actual process parameters


Revised: 02.03.16

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11. Check that the plasma has been ignited through the viewport and monitor the system

during processing.

12. At this point you should record the following operation parameters - not set-points -

in the log book and verify the system is operating within the Standard Process

Tolerances listed on the log sheet:

Chamber Pressure

ICP Forward Power

ICP Reflected Power

RIE Forward Power

RIE Reflected Power

Total Process Time

DC Bias

Helium Flow Rate

Process Gas(es) Flow Rates

NOTE: If REF or DC bias powers are not reading

properly, please contact a Shared Research

Facilities staff member so the matching networks

can be manually tuned and reinitialized. If the DC

bias is not functioning properly, press the ABORT

button and notify a Shared Research Facilities

staff member.

Figure 12: Example of the process gas parameters at

set-point on the Chamber Status Screen

NOTE: Figure 12 is an example of the gas flow at

set-point for the CLEAN_O2_SRF process. If gas

flows are not at set-point, check that the oxygen

gas bottle valve in the chase area is open and that

the gas bottles are not empty. If the bottle is

empty, please notify a Shared Research Facilities

staff member so it can be changed.

13. Before unloading the wafer, wait 2 minutes to allow all etching material and process gases to be pumped out of the system before proceeding.


Revised: 02.03.16

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14. To remove the wafer, return to the main processing screen shown in Figure 13 and

press the UNLOAD WAFER icon to remove the wafer from the processing chamber

and begin the unloading sequence. Once the wafer is unloaded the WAFER LOADED

icon will turn grey.

Figure 13: Main process screenshot for the wafer to be unloaded into loadlock

15. Remove the carrier wafer from the substrate arm and place a clean carrier wafer on

the loading arm and then press OK button shown below (Figure 14) to close the lid.

Figure 14: Screenshot of the pop-up screen before removing the wafer from the loadlock


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16. If you have finished processing for the day, press the STANDBY MODE button. This

will backfill the gas processing lines with nitrogen gas as shown in Figure 15 and

return the tool to its idle state.

Figure 15: Screenshot of the system backfiling the gas lines before entering Standby Mode

RECIPE SETUP____________________________________

NOTE: This section of the SOP is for general tool operation only. Please refer to pages 31-32 of TRION ICP/RIE manual in the log book for recommended process parameters when creating a new recipe. This can be found in in the Trion ICP/RIE Process Handbook or on the Dry Processing room computer in the Trion folder of the Desktop on in the TRION ICP/RIE process handbook.

1. To begin, press the LOAD/EDIT RECIPE on the main process screen. The following

screen will appear Figure 16.

2. Here the user has two options:

a. CREATE NEW RECIPE: Allows the user to enter desired recipe parameters by editing

the process values. Once the edits are complete, press the SAVE RECIPE TO DISK

button under a new name. Please use the following nomenclature for naming

recipes: ELEMENT+USER INITIALS (i.e. SiO2_SRF).

NOTE: Recipes can be created from existing recipes by making minor alterations, like

extending etch time. If you are planning on modifying a recipe and using it repeatedly,

you should save the recipe under a new name.

b. RECIPE FROM DISK: Allows the user to choose an existing recipe (i.e. “SiO2_SRF”

to etch silicon oxide or “Cr_SRF” to etch Cr). Several users may use the same recipe.


Revised: 02.03.16

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NOTE: While the user should be respectful and not change recipe parameters, the Shared

Research Facilities cannot guarantee that a recipe has not been altered. It is

recommended that the user check the parameters before starting a process. Always

record your recipe parameters in a lab notebook to ensure that the process can be

recreated in the future.

Figure 16: Recipe Parameters Screen

3. After verifying the desired recipe parameters, choose EXIT on the bottom right corner

of the screen. This runs a macro in the background that downloads the recipe

parameters for the current run. On the main process screen, verify the recipe names

in the Recipe Control section are the same before beginning a process to ensure the

proper recipe is being run – see Figure 17.

Figure 17: Example of verification of recipe download

CHAMBER CONDITIONING: AUTOMATIC SINGLE PROCESS_

NOTE: Chamber condition is a process of acclimating the chamber with the process gases.

This step also helps in identifying any errors in the process and the stability of the process

without actually operating on your sample.


Revised: 02.03.16

11

NOTE: The chamber conditioning step is to be performed only after the mandatory

chamber clean (CLEAN_O2_SRF) and it is also recommended to run the conditioning

process for at least of 3 minutes prior to operating on your sample.





button on the processing screen.

1. Press the LOAD/EDIT RECIPE, to begin the process.

2. Select the RECIPE FROM DISK button on the touchscreen and the Recipe Parameters

window will appear. Choose the DESIRED recipe for etching you sample material and

verify the process time is set to 3 minutes. If it is not, press on the Process Time

parameter button on the touchscreen, change to 3 minutes.

3. After verifying the desired recipe parameters,

choose EXIT on the bottom right corner of the

screen. This runs a macro in the background

that downloads the recipe parameters for the

current run. On the main process screen, verify

the recipe names in the Recipe Control section

are the same before beginning a process to

ensure the proper recipe is being run – see

Figure 18.

Figure 18: Recipe Control section on main process

screen

NOTE: As this conditioning step is to be performed after the initial chamber clean, the

carrier wafer is assumed to be loaded into the main chamber for the conditioning step.

4. Perform a Helium Flow Check (see Helium Flow Check section).

WARNING: Operating the system with a Helium Flow of above 1.0 sccm will cause

inconsistent etch rates and damage to electrostatic chuck. If you have any questions

concerning this, please contact a Shared Research Facilities Staff member.

5. When in the MAIN PROCESS CONTROL screen, hit the Automatic Single Process button to execute the process with the set parameters. Monitor the system to ensure the process is properly executed according to the set parameters.


Revised: 02.03.16

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6. Check that the plasma has been ignited through the viewport and monitor the system

during processing.

7. At this point you should record the following operation parameters - not set-points - in

the log book and verify the system is operating within the Standard Process Tolerances

listed on the log sheet:

Chamber Pressure

ICP Forward Power

ICP Reflected Power

RIE Forward Power

RIE Reflected Power

Total Process Time

DC Bias

Helium Flow Rate


NOTE: If REF or DC bias powers are not reading properly, please contact a Shared Research Facilities staff member so the matching networks can be manually tuned and reinitialized. If the DC bias is not functioning properly, press the ABORT button and notify a Shared Research Facilities staff member.

8. Before unloading the wafer, wait 2 minutes to allow all etching material and process gases to be pumped out of the system before proceeding.

9. To unload the wafer, return to the main processing screen shown in Figure 19 and press

the UNLOAD WAFER button to remove the wafer from the processing chamber and

begin the unloading sequence. Once the wafer is unloaded the WAFER LOADED status

will turn grey.


Revised: 02.03.16

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11. If you have finished processing for the day, press the STANDBY MODE button. This

will backfill the gas processing lines with nitrogen gas as shown in Figure 21 and

return the tool to its idle state.


Revised: 02.03.16

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Figure 21: Screenshot of the system backfilling the gas lines before entering Standby Mode

SAMPLE PROCESSING: AUTOMATIC SINGLE PROCESS____





icon on the processing screen.


VENT LOCK FIRST icon shown in Figure 22 to open lid of the loadlock chamber.



Revised: 02.03.16

15



3. Place the silicon wafer on the loading arm, as shown in Figure 23. If small samples are

being used, mount samples by one of the following methods in Figures 24 and 25.

Figure 23: Silicon wafer placed on the

loading arm

Figure 24: Sample attached to the carrier wafer using Cool Grease (CG)

a. Place a small amount of Cool Grease on the backside of the sample(s) and place the samples on a 4” silicon carrier wafer (Figure 24) – see Mounting Procedures – Cool Grease SOP in the Trion ICP/RIE Process Handbook.

b. Using the spinner, apply photoresist to the sample carrier wafer using the following

conditions:

Spin Speed: 4000 rpm

Time: 30 sec.

This should produce a resist film that is 4.4 µm

thick. Gently place the sample on the resist and

press all four corners of the sample to ensure the

sample is secure to the 4” carrier wafer. Hard bake

the sample at 120°C for 20 min. Figure 25 is an

image of the final result. See also the Mounting

Procedures – AZ 4400- Photoresist SOP in the Trion

ICP/RIE Process Handbook. Figure 25: Sample attached to the carrier wafer

using AZ 4400 photoresist (PR)


Revised: 02.03.16

16



electrostatic chuck to fail. Chuck failure will result in helium spikes in the plasma, as the

helium gas used for backside cooling will leak into the chamber.


on the right hand side of the tool. If the wafer is moving then the electrostatic chuck

has failed! This may cause power spikes or gas pressure spikes in your process. Helium

may also alter the concentration of the gases and change the etch rate of the process, so

use only one side of the silicon carrier wafer to prevent residue from being left behind on


cleaned.



NOTE: The Shared Research Facilities recommends that users supply their own carrier wafers due to concerns of contamination from re-sputtering of the carrier wafer.


defector. The lid of the loadlock will close automatically and start the loading

sequence.

5. The tool will begin to evacuate the loadlock and load the wafer into the process

chamber. When prompted by the WAFER LOAD SEQUENCE screen, press OK to

proceed. The WAFER LOADED button will turn green.

6. Perform a Helium Flow Check (See Helium Flow Check Section)

7. Press the AUTOMATIC SINGLE PROCESS button.

8. The chamber status screen in Figure 26 will appear and the tool will begin processing

the recipe downloaded onto the system.


Revised: 02.03.16

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Figure 26: Chamber Status Screen

NOTE: Changes to the recipe parameters cannot be made in this mode.

9. Check that the plasma has been ignited by looking through the viewport located on

the side of the tool. Monitor the system during processing.

10. At this point you should record the following parameters (READ values) in the log book:

Chamber Pressure

ICP Forward Power

ICP Reflective Power

RIE Forward Power

RIE Reflective Power

Helium Flow Rate

Total Process Time

DC Bias


NOTE: If REF or DC bias powers are not reading properly, please contact a Shared

Research Facilities staff member so the matching networks can be manually tuned and

reinitialized. If the DC bias is not functioning properly, press the ABORT button and notify

a Shared Research Facilities staff member.


Revised: 02.03.16

18

NOTE: Figure 27 is an example of the gas flow at

set-point for the CLEAN_O2_SRF process. If gas

flows are not at set-point, check that the oxygen

gas bottle valve in the chase area is open and that

the gas bottles are not empty. If the bottle is

empty, please notify a Shared Research Facilities

staff member so it can be changed.

Figure 27: Example of the process gas parameters at

set-point on the Chamber Status Screen 17. Before unloading the wafer, wait 2 minutes to allow all etching material and process

gases to be pumped out of the system before proceeding.







Revised: 02.03.16

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20. Press the OK button shown below (Figure 30) to pump down the loadlock.

Figure 30: Screenshot for the pump-down authorization of the loadlock

21. If you have finished processing for the day, press the STANDBY MODE button. This will

backfill the gas processing lines with nitrogen gas as shown in Figure 31 and return the

tool to its idle state.


Revised: 02.03.16

20


SAMPLE PROCESSING: MANUAL PROCESS_____________

Manual process control: This mode is most useful when there is no established recipe

and the user is recreating a recipe from literature or creating a recipe from scratch.

Operation in this mode gives the user direct control over the process, allowing the user

to adjust the process parameters during operation. This mode is also useful when

troubleshooting problems.


VENT LOCK FIRST icon shown in Figure 32 to open lid of the loadlock chamber.



Revised: 02.03.16

21



3. Place the silicon wafer on the loading arm, as shown in Figure 33. If small samples are

being used, mount samples by one of the following methods in Figures 34 and 35.

Figure 33: Silicon wafer placed on the

loading arm

Figure 34: Sample attached to the carrier wafer using Cool Grease (CG)

a. Place a small amount of Cool Grease on the backside of the sample(s) and place the samples on a 4” silicon carrier wafer (Figure 34) – see Mounting Procedures – Cool Grease SOP in the Trion ICP/RIE Process Handbook.

b. Using the spinner, apply photoresist to the sample carrier wafer using the following

conditions:

Spin Speed: 4000 rpm

Time: 30 sec.

This should produce a resist film that is 4.4 µm

thick. Gently place the sample on the resist and

press all four corners of the sample to ensure the

sample is secure to the 4” carrier wafer. Hard bake

the sample at 120°C for 20 min. Figure 35 is an

image of the final result. See also the Mounting

Procedures – AZ 4400- Photoresist SOP in the Trion

ICP/RIE Process Handbook. Figure 35: Sample attached to the carrier wafer

using AZ 4400 photoresist (PR)


Revised: 02.03.16

22



electrostatic chuck to fail. Chuck failure will result in helium spikes in the plasma, as the

helium gas used for backside cooling will leak into the chamber.


on the right hand side of the tool. If the wafer is moving then the electrostatic chuck

has failed! This may cause power spikes or gas pressure spikes in your process. Helium

may also alter the concentration of the gases and change the etch rate of the process, so

use only one side of the silicon carrier wafer to prevent residue from being left behind on


cleaned.



NOTE: The Shared Research Facilities recommends that users supply their own carrier wafers due to concerns of contamination from re-sputtering of the carrier wafer.


defector. The lid of the loadlock will close automatically and start the loading

sequence.

5. The tool will begin to evacuate the loadlock

and load the wafer into the process chamber.

When prompted by the WAFER LOAD

SEQUENCE screen, press OK to proceed. The

WAFER LOADED status will turn green as

shown in the Figure 36. Figure 36: Wafer Loaded Status

6. Perform a Helium Flow Check (See Helium Flow Check Section)

7. Press the MANUAL PROCESS CONTROL button and the manual processing screen

will appear – see Figure 37.


Revised: 02.03.16

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Figure 37: Manual Process Control screenshot

NOTE: Process Time Set in this mode is not applicable as the process will continue to run until the user turns the RF power off by selecting the RF ON icon. It is important for the user to note the total Process Time Read value before stopping the process so the process set-point can be edited for future runs.

8. Open the pressure isolation valve by pressing

PRESS ISO CLOSED icon. The icon will turn

green and read PRESS ISO OPEN. Continue

once the vacuum pressure is stable and near

the set-point (Figure 38).

Figure 38: Pressure parameters on the Process

Control screen

9. Press the CLAMP OFF button to turn on the electrostatic chuck. The button will turn

green and read CLAMP ON. This step is necessary to properly secure substrate and

enable backside cooling. If this step is skipped, then helium gas will leak into the

chamber once the gases are turned on. As a result the substrate will not be cooled

during processing and damage to the substrate will occur.


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10. Turn the gases on by pressing the GASES OFF

button. The icon will then turn green and read

GAS ON. Here the tool will begin the flow of

gases and the pressure will change. Gas set-

points can be edited in this mode at any time

during the process. To do this, press the set-

point value of the gas (see Figure 39) to be

modified on the touchscreen and change to the

desired value. Wait for gases and pressure to

stabilize after changing gas parameters.

Figure 39: Gas parameters on the Process Control Screen

NOTE: If gas flows are not at set-point, check that the gas valves in the chase area are

open and that the gas bottles are not empty. If the bottle is empty, please notify a Shared

Research Facilities staff member so it can be changed.

11. Verify that the Helium pressure = 5T with a flow

rate of ≤1.0 sccm (see Figure 40 below) to

ensure proper backside cooling. If it does not

reach this set-point, then there is a leak on the

backside of the substrate, the gas bottle is

empty, or the substrate clamp is set to CLAMP

OFF. Turn off the flow of gases by toggling the

GASES ON icon to off. Remove substrate from

the chamber and clean backside using IPA or

Methanol. Also, verify that the helium gas

bottle is open and not empty. Reload the

sample and try again. If the problem persists,

contact a Shared Research Facilities staff

member.

Figure 40: Helium Parameters on the Process

Control Screen


Revised: 02.03.16

25

WARNING: If the sample is processed with a He flow rate above 1.0 sccm, the sample

etch rates will vary and damage to the electrostatic chuck can occur.

12. Press the RF OFF icon to turn the RF power on. The icon will read RF ON and will turn

green; the plasma should ignite. Look through the viewport on the side of the chamber

and verify that the plasma has been ignited inside the chamber. At this point you

should record the following parameters (READ values) in the log book:

Chamber Pressure

ICP Forward Power

ICP Reflective Power

RIE Forward Power

RIE Reflective Power

Helium Flow Rate

Total Process Time

DC Bias


NOTE: If the REF or DC bias powers are not reading properly, please contact a Shared

Research Facilities staff member so the matching networks can be manually tuned. If the

DC bias is not functioning properly, press the ABORT icon and notify a staff member.

13. Once the process is complete, the user should note the total time in the logbook, and

stop the process by selecting the icons in the following sequence:

First, turn off the RF power by pressing the RF ON icon; the icon will turn grey and

read RF OFF.

Second, turn off the gases by pressing GASES ON icon; the icon will turn grey and

read GASES OFF.

Third, release the clamp by pressing the CLAMP ON icon; the icon will turn grey and

read CLAMP OFF.

Finally, close the pressure isolation valve by pressing the PRESS ISO OPEN icon; the

icon will turn grey and read PRESS ISO CLOSED.


Revised: 02.03.16

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WARNING: Failure to release the clamp can cause the transfer arm to break the wafer or

Si substrate carrier wafer. Damage to the sample and the tool may occur.

14. Before unloading the wafer, wait 2 minutes to allow all etching material and process

gas to be pumped out of the system before proceeding.









Revised: 02.03.16

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17. Press the OK button shown below (Figure 43) to pump down the loadlock.

Figure 43: Screenshot for the pump-down authorization of the loadlock

18. If you have finished processing for the day, press the STANDBY MODE button. This will

backfill the gas processing lines with nitrogen gas as shown in Figure 44 and return the

tool to its idle state.


Revised: 02.03.16

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HELIUM FLOW RATE CHECK________________________

NOTE: This process to be performed only with the wafer loaded into the main process chamber.

1. Press the MANUAL PROCESS CONTROL icon to enter Manual Process Control screen. 2. Press the CLAMP OFF icon to engage the electrostatic chuck and the icon will turn

green and read CLAMP ON. 3. Turn all process gas values to zero. 4. Press the GASES OFF icon to open the gas valves. The icon will turn green read GASES

ON. 5. Verify that the Helium Flow Rate is ≤ 1.2 sccm. This will assist in achieving consistent

etch rates and ensure the tool is functioning properly. 6. Press the EXIT icon to return to the home screen.


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TURNING OFF THE SYSTEM_________________________

1. Inspect the backside of the carrier wafer for contamination and clean if necessary using IPA and an alpha wipe. Then place the carrier wafer in the loadlock and pump down.

NOTE: If the backside of the wafer cannot be cleaned, then place the silicon wafer in the dish on the sample prep table as the wafers are the property of the Shared Research Facilities. Then notify a Shared Research staff member. 2. Make sure that the system was put in STANDBY MODE.

3. Check that all required parameters are recorded in the log book.

4. Clean up your work area by doing the following:

Verify the lid to the Cool Grease is closed.

Properly dispose of any used cleanroom wipers in appropriately marked containers.

5. Log out of the CORES using the kiosk in the gowning room.


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EMERGENCY SHUT-DOWN PROCEDURES_______________

If, at any time, the user needs to contact someone for help, call or locate the following staff of the

Shared Research Facility (SRF):

Primary Staff

Contact:

Harley Hart

(412) 443-1514 (M)

(304) 293-5847 (O)

Office: White Hall 409

[email protected]

Secondary

Staff Contact:

Dr. Weiqiang Ding

(304) 293-9683 (M)

(304) 685-1938 (O)

Office: ESB G75D

[email protected]

If no one is available and the instrument is not acting as expected, the user should do the following:

Press ABORT on the process screen.

Go to main screen and choose STANDBY MODE to backfill gas lines.

Go into chase and turn OFF all process gas bottles.

Then, if possible, the user should stay by the instrument while trying to contact a Shared Facilities staff

member. If it becomes necessary to leave the instrument then the user should leave a large, legible note

on the ICP/RIE stating:

The problem (describe what happened and steps taken)

When it occurred (date and time)

User name and phone number

If it becomes necessary to leave the instrument then the user should leave a large, legible note at the

ICP/RIE stating the instrument is DOWN.

If a dangerous situation is evident (smoke, fire, sparks, etc.), or unexplained odor in the room (Chlorine

gas), ONLY if it is safe to do so, the user should press the EMO (EMERGENCY OFF) button on the left

side of the tool and leave the cleanroom immediately. The user should notify all other cleanroom

users within the cleanroom to evacuate. The user should then contact proper emergency personnel.

The contact numbers can be found posted outside of the cleanroom or on the cover of the instrument

log book.

Date post:	26-May-2018
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TRION MINILOCK-PHANTOM ICP/RIE STANDARD OPERATING PROCEDURE · TRION MINILOCK-PHANTOM ICP/RIE...

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