Tutorial

SiC Power Conversion and System Packaging Technologies for High temperature High Pressure Harsh Environment Applications

Saijun Mao, Braham Ferreira

Brief Description:

This tutorial will focus on the silicon carbide (SiC) power conversion and system packaging technologies for

downhole and subsea power high temperature high pressure harsh environment applications. The downhole oil

well logging tools need to operate up to several kilometers deep-well, which accounts for 30kpsi extreme

pressure and high temperatures of 150°C to 175°C and beyond. The subsea oil exploration electrical systems

need to be located at depths of up to 3km in deep water and to withstand high pressure around 4.4kpsi (300bar).

Because of the downhole and subsea harsh-environment applications, the power conversion systems need to

survive well beyond the traditional temperature, high pressure, as well as high shock and vibration

environments. The challenges of high temperature, high pressure environments bring the research and

development opportunities for power generation, power conversion and power electronics packaging

technologies to meet the requirements of oil & gas downhole and subsea industry. This tutorial aims at providing

power electronics researchers and engineers with fundamental knowledge (mainly for entry-level professionals)

as well as advanced design techniques (mainly for senior-level professionals) of power conversion and

packaging technologies. The tutorial will start with the overview of oil & gas downhole power generation and

conversion system, as well as subsea power system. The key requirements for the high temperature high pressure

harsh environment power generation & conversion and system packaging technologies will be introduced. The

tutorial will then introduce the high temperature power generation with the turbine generator as the downhole

energy harvester and power conversion with SiC power semiconductor devices. The high temperature packaging

and switching characterizations of 1.2 kV SiC MOSFETs, as well as high temperature gate driver circuit solution

at 175°C will be presented. The high pressure subsea power packaging technologies for pressure tolerant power

electronics considering the mechanical, electrical, thermal and reliability requirements will be provided. The

reliably, power density and packaging technologies, as well as characterizations of SiC MOSFET modules for

subsea medium voltage drive inverters will be discussed. The detailed insulation and thermal modeling,

packaging design and experimental validation for the subsea pressure tolerant 60 kVDC/1.5 kA oil insulated

high voltage switches and 5 MVA 22 kV/6.6 kV subsea power transformers will be introduced in details. The

last section of the tutorial will provide a summary and development trends of power conversion and system

packaging technologies high temperature high pressure harsh environment applications.

Saijun Mao (SM’20) received the B.S. and M.S. degrees from Nanjing University of Aeronautics and Astronautics, Nanjing, China, the Ph.D. degree from Delft University of Technology, Delft, the Netherlands, all in electrical engineering. From 2006 to 2017, he was a senior engineer and project leader with the GE Global Research Center, Shanghai, China. He was also with the Electrical Power Processing group in the department of Electrical Sustainable Energy at the Delft University of Technology, Delft, the Netherlands as a Ph.D. Researcher since December 2014. He was the Vice President of Shanghai Lingang Power Electronics Research Institute, and Principal Engineer in Leadrive Technology (Shanghai) Co., Ltd. He is now a Research Fellow in the Center for Shanghai Silicon Carbide Power Devices Engineering & Technology Research, Fudan University, China. His research interests include wide-bandgap power semiconductor devices-based power conversion systems, high frequency high voltage generator systems, as well as harsh environment power conversion and packaging. He has published more than 40 conference and journal papers. Dr. Mao has provided 4 tutorials in IEEE APEC, ECCE and PEAC conferences. He holds over 40 issued patents and pending patent applications. He received one IEEE Best Paper award. He received more than 15 awards, including annual technology excellence award, annual technology excellence team award and top inventor award in GE Global Research Center.

Braham Ferreira (M’88-SM’01-F’05) received his B.Sc., M.Sc. and Ph.D. in electrical engineering from the Rand Afrikaans University, Johannesburg, South Africa, in 1980, 1982 and 1988 respectively. In 1981 he was with the Institute of Power Electronics and Electric Drives, Technical University of Aachen, and worked as a system engineer at ESD Pty (Ltd) from 1982-1985. From 1986 thru 1997 he was at the Department of Electrical Engineering, Rand Afrikaans University, where he held the Carl and Emily Fuchs Chair of Power Electronics in later years. Since 1998 he held the chair in Power electronics and Electrical Machines at the Delft University of Technology in The Netherlands and served as head of the Department during 2006-2010. Since 2019 he is a professor at University of Twente in The Netherlands. Dr. Ferreira is author and co-author of 100 journal and transactions papers, 300 conference papers and 15 patents, and was awarded 15 prize paper awards. He is a Fellow of the IEEE and served as President of IEEE PELS during 2015-6.