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PE42723Document Category: Product SpecificationUltraCMOS® SPDT RF Switch, 5–1794 MHz
Features• Supports DOCSIS 3.0/1 requirements
• Exceptional harmonics
2fo of –121 dBc @ 17 MHz
3fo of –140 dBc @ 17 MHz
• Best in class linearity across frequency band
• Low insertion loss and high isolation performance
Insertion loss of 0.3 dB @ 1218 MHz
Isolation of 54 dB @ 204 MHz
• High ESD performance of 3 kV HBM
• Packaging – 12-lead 3 × 3 × 0.75 mm QFN
Applications• Broadband market (DOCSIS 3.0/1)
Cable modem
Set-top box
Residential gateway
• Filter bank switching
• Relay replacement between DOCSIS 3.0 and DOCSIS 3.1 configurations
Product DescriptionThe PE42723 is a HaRP™ technology-enhanced reflective SPDT RF switch designed for use in cable applica-tions including DOCSIS 3.0/1 cable modem, set-top box and residential gateway. It delivers high linearity and excellent harmonics performance in the 5–1794 MHz band. It also features low insertion loss and high isolation performance making the PE42723 ideal for DOCSIS 3.1 applications.
The PE42723 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
Figure 1 • PE42723 Functional Diagram
RFC
CMOS Control Driver
RF2RF1
V1
©2015–2016, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification DOC-64524-5 – (01/2016)www.psemi.com
PE42723SPDT RF Switch
Absolute Maximum RatingsExceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability.
ESD PrecautionsWhen handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1.
Latch-up ImmunityUnlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE42723
Parameter/Condition Min Max Unit
Supply voltage, VDD –0.3 5.5 V
Digital input voltage, V1 –0.3 3.6 V
RF input power, 75Ω 86 dBmV
Storage temperature range –65 +150 °C
ESD voltage HBM(1), all pins 3000 V
ESD voltage CDM(2), all pins 500 V
Notes:
1) Human body model (MIL-STD 883 Method 3015).
2) Charged device model (JEDEC JESD22-C101).
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PE42723SPDT RF Switch
Recommended Operating ConditionsTable 2 lists the recommended operating conditions for the PE42723. Devices should not be operated outside the operating conditions listed below.
Table 2 • Recommended Operating Conditions for PE42723
Parameter Min Typ Max Unit
Supply voltage, VDD 2.3 3.3 5.5 V
Supply current, IDD 130 200 µA
Digital input high, V1 1.17 3.6(1) V
Digital input low, V1 –0.3 0.6 V
RF input power, CW(2) 80 dBmV
RF input power, peak(3) 85 dBmV
Operating temperature range –40 +25 +85 °C
Notes:
1) Maximum digital input voltage is limited to VDD and cannot exceed 3.6V.
2) 100% duty cycle, 75Ω.
3) OFDMA DOCSIS 3.1, single channel, 75Ω.
DOC-64524-5 – (01/2016) Page 3www.psemi.com
PE42723SPDT RF Switch
Electrical SpecificationsTable 3 provides the PE42723 key electrical specifications @ +25 °C, VDD = 3.3V, ZS = ZL = 75Ω, unless otherwise specified.
Table 3 • PE42723 Electrical Specifications
Parameter Path Condition Min Typ Max Unit
Operating frequency 5 1794 MHz
Insertion loss(1) RFC–RFX
5–204 MHz
204–1218 MHz
1218–1794 MHz
0.10
0.30
0.40
0.20
0.45
dB
dB
dB
Isolation All paths
5–204 MHz
204–612 MHz
612–1218 MHz
1218–1794 MHz
50
40
36
54
44
38
34
dB
dB
dB
dB
Return loss(1) RFC–RFX
5–204 MHz
204–612 MHz
612–1218 MHz
1218–1794 MHz
25
18
30
22
14
13
dB
dB
dB
dB
2nd harmonic, 2fo RFX
fo = 17 MHz
Average PCW = 65 dBmV
fo = 170 MHz
Average PCW = 65 dBmV
fo = 900 MHz
Average PCW = 65 dBmV
–121
–121
–121
dBc
dBc
dBc
3rd harmonic, 3fo RFX
fo = 17 MHz
Average PCW = 65 dBmV
fo = 170 MHz
Average PCW = 65 dBmV
fo = 900 MHz
Average PCW = 65 dBmV
–140
–132
–135
dBc
dBc
dBc
Input 0.1dB compression
point(2) RFC–RFX 5–1218 MHz 87 dBmV
Switching time 50% CTRL to 90% or 10% RF 35 µs
Notes:
1) High frequency performance can be improved by external matching (see Figure 12–Figure 15).
2) The input 0.1dB compression point is a linearity figure of merit. Refer to Table 2 for the operating RF input power (75Ω).
Page 4 DOC-64524-5 – (01/2016)www.psemi.com
PE42723SPDT RF Switch
Switching FrequencyThe PE42723 has a maximum 10 kHz switching frequency. Switching frequency describes the time duration between switching events. Switching time is the time duration between the point the control signal reached 50% of the final value and the point the output signal reaches within 10% or 90% of its target value.
Spurious Performance The PE42723 spur fundamental occurs around 10 MHz. Its typical performance is –154 dBm/Hz (V1 = H) and –165 dBm/Hz (V1 = L), with 100 kHz bandwidth.
Thermal DataPsi-JT (JT), junction top-of-package, is a thermal metric to estimate junction temperature of a device on the customer application PCB (JEDEC JESD51-2).
JT = (TJ – TT)/P
where
JT = junction-to-top of package characterization parameter, °C/W
TJ = die junction temperature, °C
TT = package temperature (top surface, in the center), °C
P = power dissipated by device, Watts
Control LogicTable 5 provides the control logic truth table for the PE42723.
Table 4 • Thermal Data for PE42723
Parameter Typ Unit
Maximum junction temperature, TJMAX
(RF input power, CW = 80 dBmV, +85°C ambient)90 °C
JT 21 °C/W
Table 5 • Truth Table for PE42723
State V1
RFC–RF1 H
RFC–RF2 L
DOC-64524-5 – (01/2016) Page 5www.psemi.com
PE42723SPDT RF Switch
Typical Performance DataFigure 2–Figure 11 show the typical performance data @ +25 °C, VDD = 3.3V, ZS = ZL = 75Ω, unless otherwise specified.
Figure 2 • Insertion Loss vs Temperature (RFC–RFX)(*)
Note: * High frequency performance can be improved by external matching (see Figure 12–Figure 15).
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2−4
−3.5
−3
−2.5
−2
−1.5
−1
−0.5
0
Inse
rtion
Los
s (d
B)
Frequency (GHz)
−40 ºC +25 ºC +85 ºC
Figure 3 • Insertion Loss vs VDD (RFC–RFX)(*)
Note: * High frequency performance can be improved by external matching (see Figure 12–Figure 15).
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2−4
−3.5
−3
−2.5
−2
−1.5
−1
−0.5
0
Inse
rtio
n Lo
ss (d
B)
Frequency (GHz)
2.3V 3.3V 5.5V
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PE42723SPDT RF Switch
Figure 4 • RFC Port Return Loss vs Temperature(*)
Note: * High frequency performance can be improved by external matching (see Figure 12–Figure 15).
Figure 5 • RFC Port Return Loss vs VDD(*)
Note: * High frequency performance can be improved by external matching (see Figure 12–Figure 15).
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Ret
urn
Loss
(dB
)
Frequency (GHz)
−40 ºC +25 ºC +85 ºC
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Ret
urn
Loss
(dB
)
Frequency (GHz)
2.3V 3.3V 5.5V
DOC-64524-5 – (01/2016) Page 7www.psemi.com
PE42723SPDT RF Switch
Figure 6 • Active Port Return Loss vs Temperature(*)
Note: * High frequency performance can be improved by external matching (see Figure 12–Figure 15).
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Ret
urn
Loss
(dB
)
Frequency (GHz)
−40 ºC +25 ºC +85 ºC
Figure 7 • Active Port Return Loss vs VDD(*)
Note: * High frequency performance can be improved by external matching (see Figure 12–Figure 15).
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
0
Ret
urn
Loss
(dB
)
Frequency (GHz)
2.3V 3.3V 5.5V
Page 8 DOC-64524-5 – (01/2016)www.psemi.com
PE42723SPDT RF Switch
Figure 8 • Isolation vs Temperature (RFX–RFX)
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isol
atio
n (d
B)
−40 ºC +25 ºC +85 ºC
Figure 9 • Isolation vs VDD (RFX–RFX)
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isol
atio
n (d
B)
2.3V 3.3V 5.5V
DOC-64524-5 – (01/2016) Page 9www.psemi.com
PE42723SPDT RF Switch
Figure 10 • Isolation vs Temperature (RFC–RFX)
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isol
atio
n (d
B)
−40 ºC +25 ºC +85 ºC
Figure 11 • Isolation vs VDD (RFC–RFX)
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isol
atio
n (d
B)
2.3V 3.3V 5.5V
Page 10 DOC-64524-5 – (01/2016)www.psemi.com
PE42723SPDT RF Switch
High Frequency Performance with External MatchingHigh frequency insertion loss and return loss can be improved by inductive matching on the RF ports in the customer application board layout. Figure 12 is a matching network using a 2.2 nH inductor on each RF port. The inductor needs to be placed as close to the device under test (DUT) as possible. Figure 13–Figure 15 show the insertion loss and return loss improvement using a 2.2 nH inductor on RFC port and a 2.2 nH on RF1, RF2 and RFC ports, respectively.
Figure 12 • PE42723 Matching Network
SPDTPE42723
RF1
RFC
L = 2.2 nH L = 2.2 nH
L = 2.2 nH
RF2
DUT
Figure 13 • Insertion Loss (RFC–RFX) With or Without Matching(*)
Note: * For reference only.
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Inse
rtion
Los
s (d
B)
Frequency (GHz)
No Matching RFC Matched Only All RF Ports Matched
DOC-64524-5 – (01/2016) Page 11www.psemi.com
PE42723SPDT RF Switch
Figure 14 • RFC Port Return Loss With or Without Matching(*)
Note: * For reference only.
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Ret
urn
Loss
(dB
)
Frequency (GHz)
No Matching RFC Matched Only All RF Ports Matched
Figure 15 • Active Port Return Loss With or Without Matching(*)
Note: * For reference only.
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Ret
urn
Loss
(dB
)
Frequency (GHz)
No Matching RFC Matched Only All RF Ports Matched
Page 12 DOC-64524-5 – (01/2016)www.psemi.com
PE42723SPDT RF Switch
Evaluation KitThe PE42723 evaluation board was designed to ease customer evaluation of the PE42723 RF switch. The RF common port is connected through a 75Ω transmission line via the F-Type connector, J3. RF1 and RF2 ports are connected through 75Ω transmission lines via F-Type connectors J1 and J2, respectively. A 75Ω through trans-mission line is available via F-Type connectors J4 (THRU left) and J5 (THRU right), which can be used to de-embed the loss of the PCB. J6 provides DC and digital inputs to the device.
Figure 16 • Evaluation Kit Layout for PE42723
DOC-64524-5 – (01/2016) Page 13www.psemi.com
PE42723SPDT RF Switch
Pin InformationThis section provides pinout information for the PE42723. Figure 17 shows the pin map of this device for the available package. Table 6 provides a description for each pin.
Figure 17 • Pin Configuration (Top View)
ExposedGround Pad
GND
RF1
GND
NC
VD
D
V1
GN
D
RFC
GN
D
1
3
2
GND
RF2
GND
9
4 5 6
12 11 10
7
8
Pin 1 DotMarking
Table 6 • Pin Descriptions for PE42723
Pin No.Pin
NameDescription
1, 3, 7, 9, 10, 12
GND Ground
2 RF1(*) RF port 1
4 NC Do not connect
5 VDD Supply voltage (nominal 3.3V)
6 V1 Digital control logic input 1
8 RF2(*) RF port 2
11 RFC(*) RF common
Pad GNDExposed pad: ground for proper oper-ation
Note: * RF pins 2, 8 and 11 must be at 0 VDC. The RF pins do not require DC blocking capacitors for proper operation if the 0 VDC require-ment is met.
Page 14 DOC-64524-5 – (01/2016)www.psemi.com
PE42723SPDT RF Switch
Packaging InformationThis section provides packaging data including the moisture sensitivity level, package drawing, package marking and tape-and-reel information.
Moisture Sensitivity LevelThe moisture sensitivity level rating for the PE42723 in the 12-lead 3 × 3 × 0.75 mm QFN package is MSL1.
Package Drawing
Figure 18 • Package Mechanical Drawing for 12-lead 3 × 3 × 0.75 mm QFN
0.10 C
0.10 C(2X)
(2X)A
B
TOP VIEW BOTTOM VIEW RECOMMENDED LAND PATTERN
PIN #1 CORNER
9
10
6
7
12
1
4
3
3.00
3.00 1.60±0.05
1.60±0.05
0.50
0.40±0.05(x12)
0.23±0.05(x12)
(x8)
9
10
6
7
12
1
4
3
1.65
1.65
0.25(x12)
0.85(x12)
0.50(x8)
2.90Ref.
2.90Ref.
0.75±0.05
0.05MAX
0.10 C A B0.05 C
C
0.10 C
0.05 CSEATING PLANE
ALL FEATURES
0.20 SIDE VIEWThird AngleProjection
Unless otherwise specifieddimensions are in millimeters
DECIMALX.X ± 0.1X.XX ± 0.05X.XXX ± 0.030
Interpret dimensions and toleranceper ASME Y14.5 – 1994
ANGULAR± 1°
DOC-64524-5 – (01/2016) Page 15www.psemi.com
PE42723SPDT RF Switch
Top-Marking Specification
Tape and Reel Specification
Figure 19 • Package Marking Specifications for PE42723
Figure 20 • Tape and Reel Specifications for 12-lead 3 × 3 × 0.75 mm QFN
=YY =WW =
ZZZZZZ =
Pin 1 indicatorLast two digits of assembly yearAssembly work weekAssembly lot code (maximum six characters)
42723YYWW
ZZZZZZ
T
K0 A0
B0
P0P1
D1A
Section A-A
A
Direction of Feed
D0
E
W0
P2see note 3
seenote 1
Fsee note 3
A0B0K0D0D1EF
P0P1P2T
W0
3.303.301.10
1.50 + 0.1/ -0.01.5 min
1.75 ± 0.105.50 ± 0.05
4.008.00
2.00 ± 0.050.30 ± 0.0512.00 ± 0.3 Device Orientation in Tape
Pin 1
Notes:1. 10 Sprocket hole pitch cumulative tolerance ±0.22. Camber in compliance with EIA 4813. Pocket position relative to sprocket hole measured
as true position of pocket, not pocket hole
Page 16 DOC-64524-5 – (01/2016)www.psemi.com
PE42723 SPDT RF Switch
Ordering InformationTable 7 lists the available ordering codes for the PE42723 as well as available shipping methods.
Table 7 • Order Codes for PE42723
Order Codes Description Packaging Shipping Method
PE42723A-Z PE42723 SPDT RF switch 12-lead 3 × 3 × 0.75 mm QFN 3000 units/T&R
EK42723-01 PE42723 Evaluation kit Evaluation kit 1/Box
Product Specification www.psemi.com DOC-64524-5 – (01/2016)
Document CategoriesAdvance InformationThe product is in a formative or design stage. The datasheet containsdesign target specifications for product development. Specificationsand features may change in any manner without notice.
Preliminary SpecificationThe datasheet contains preliminary data. Additional data may be addedat a later date. Peregrine reserves the right to change specifications atany time without notice in order to supply the best possible product.
Product SpecificationThe datasheet contains final data. In the event Peregrine decides tochange the specifications, Peregrine will notify customers of theintended changes by issuing a CNF (Customer Notification Form).
Product BriefThis document contains a shortened version of the datasheet. For thefull datasheet, contact [email protected].
Not Recommended for New Designs (NRND)This product is in production but is not recommended for new designs.
End of Life (EOL)This product is currently going through the EOL process. It has aspecific last-time buy date.
ObsoleteThis product is discontinued. Orders are no longer accepted for thisproduct.
Sales ContactFor additional information, contact Sales at [email protected].
DisclaimersThe information in this document is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall beentirely at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party.Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended tosupport or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or deathmight occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products insuch applications.
Patent StatementPeregrine products are protected under one or more of the following U.S. patents: patents.psemi.com
Copyright and Trademark©2015–2016, Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo, UTSi and UltraCMOS are registered trade-marks and HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp.