UNCLASSIFIED
AD NUMBER
AD486595
NEW LIMITATION CHANGE
TOApproved for public release, distributionunlimited
FROMDistribution authorized to U.S. Gov't.agencies and their contractors;Administrative/Operational Use; JUN 1966.Other requests shall be referred to AirForce Materials Lab., Wright-PattersonAFB, OH 45433.
AUTHORITY
AFML ltr, 28 Dec 1971
THIS PAGE IS UNCLASSIFIED
Aix P"W9 WATEIALSO LASOIIOf Ry-/"i %/- o I ... ftfi= 110.."GO 'T AVWs0 -ll ""
CADMIUM OXIDE
Co M. NEUBERGER-)
DATA SHEET DS-149
JUNE 1966
EPIC
S:AHUGHES AHUGHES AINCRAPT COMPANY NG ,CULV _ R CITY. CALIPORNIA
P
This document is subject to special export controls and each --anemittal
to foreign governments or foreign nationals may be made only with priorapproval of the Materials Information Branch, Materials ApplicationsDivision, Air Force Materials Laboratory, Wright-Patterson Air Force Base,Ohio. 45433
NOTICES
When Government drawings, specifications, or other data are usedfor any purpose other thnn in connection with a definitely relatedGovernment procurement operation, the United States Governmentthereby incurs no responsibility nor any obligation whatsoever;and thefact that the Government may have formulated, furnished,or in any way supplied the said drawings, specifications, or otherdata, ia not to be regarded by implication or otherwise as in anymanner licensing the holder or any other person or corporation, orconveying any rights or permission to manufacture, use, or sellany patented invention that may in any way be related thereto.
Qualified requesters may obtain copies of this report from theDefense Documentation Center (DDC), Cameron Station, Bldg. 5,5010 Duke Street, Alexandria, Virginia, 22314.
!?
COFYRiGHTa MUOMAIRCRAFT COMPANY 1966
Copies of this report should not be returned to the Research andTechnology Division, Wright-Patterson Air Force Base, Ohio, unlessrcturn is required by security considerations, contractural obliga-tions, or notice on a specific document.
AIR FOARC MATERIALS LADORAYDAY"RAftCH ANI& TVMN.Ltty DIVIIN"AIR PONCIS VSTNO OUNAN=D
CONTRACT AP $1I1I9 - $460PROJBCT iols TASK ?W4111
CADMIUM OXIDE.
... -- , . :- s / s , 7':/1M. N EUBE RG ER.
(/6-F ______'-
*7 6
1
HUGHESi L~. ...................... .--
NUOtIE AINCRAFT COMPANYCULVER CITY. CALIPORNIA
This document is subject to special export controls and each transmittal
. to foreign governments or foreign nationals may be made only with priorapproval of the Materials Information Branch, Materials ApplicationsDivision, Air Force Materials LaboratonL Wriht-P-E =&U Air Force Base,
Ohio. 45433 -0 C,
FORLWORD
This report was prepared by Hughes Aircraft Company, Culver City,
California, under Contract Number AF 33(615)-2460, a continuation of work
performed under Contract AF 33(615)-1235. The contract was initiated under
Project No. 7381, "Materials Application," Task No. 738103r "Materials
Information Development, Collection and Processing." The work was admin-
istered under the direction of the hir Torce Materials Laboratory, Research
and Technology Division, Air Force Systems Command, Wright-Patterson Air
Force Base, Ohio, with Mr. R. F. Klinger, Project Engineer.
The EPIC Information Analysis Center is a center for the collection, re-
viei and analysis of the scientific and technical literature on the electrical
and electronic properties of materials. Its major function is to evaluate,
compile and publish the experimental data from that literature. Through the
mediu, of a series of publications such as Data Sheets, Special Reports, State-
of-the-Art Peports, Computer Bibliographies, and services including special
otudies, answers to technical inquiries, research support is provided to the
DoD community. EPIC input is primarily from the open literature. A large
number of abstract journals, in addition to about 40 other journals, and the
unclassified report literature are completely searched.
The initial step in the preparation of this data sheet was the retrieval,
by means of a modified coordinate index, of all cadmium oxide literature in
the EPIC file. Bibliographies were also reviewed to ensure the inclusion of
all relevant literature. Those papers containing primary source data were
selected unless only secondary references were available.
If equally valid data are available from several sources, all are given.
Data are relected when considered questionable because of faulty or dubious
iii
measurements, unknown sample composition, or if more reliable and Inclusive data
a: available from another source. Selection of data is based upon evaluation
of that which is most representative, precise, reliable and inclusive over a
wide range of parameters. The addition of new data to a material compilation
rCquire a reappraisal of the reported values. Older data may be deleted in
light of the new data.
Within every property section we have tried to include every available
parameter and range of experimental condition in the literature. Information
on test conditions and sample specification are extracted from the article.
Some slight alterations in units and presentation may be made to facilitate
comparison with other experimental data.
This report consists of the compiled data sheets on cadmium oxide. A full
liot of EPIC publications to date appears at the end of the report.
The author wishes to acknowledge the assistance afforded by Dr. J. J.
Grocnan in reviewing the experimental data, and the contribution of Mr. E.
Schafer in the pre-publication review of the compilation. The supporting
aoir;tance of other members of the EPIC staff, in particular, Mrs. Jean Forest,
Mr. Thomas Lyndon, and Mr. W. S. Hodge, is gratefully acknowledged,
iv
ABSTRACT
These data sheets present a compilation of a wide rnnge of electronic
properties for cadmium oxide. Electrical properties include conductivity,
dielectric constant, Hall coefficient, and mobility. Emission data have
been broken down intu the varied electron and photon emissions which result
from application of electromagnetic energy over a wide spectrum. Energy data
include energy bands, energy gap, and energy levels, as well as effective
mass tables, and work function. The optical properties include absorption,
reflection, and refractive index. Magnetic data are presented, as well as
oev'ral other physical phenomena, such as Debye temperature. Thermsoelectric
and thermomagnetic properties are shown. Each property is compiled over the
widest possible range of parameters including bulk and film form, from ref-
erences obtained in a thorough literature search.
A summary'of crystal structure and phase transitions has been included.
This report has been reviewed and is approved for publication.
Emil Schafer, Assist HeadElectronic Properties Information Center
f6 hn W. Atwoo d
kroject Manager'
v
n 'Y'
-Eediia iinuckt 0 1
Elecrica Resstivty-
IS6ai ~ hai 1etiiPoet-s1
Hall oeffint.S . . s . . . . . . * . .. 5
Letincnofcen
koffectvy M . . . . . . . . . . . . . . .... .. . .. 1
Eecra l dctivt . . . . . .. . . * * .0.. . 1'Electricafl Ceonstivnt . . . . . . . . . . . , 42'.
Sermelrc, Jnder thioeetr6 Prpetis'
eecroneco r m~in 5 .. . . . . . ... . . 24'Publicains of- th Elcrhd . . * tisD'S D'S'59'*n Cnter S6 Si2
Enrg Gp ;-. . ... * * Cp CC'C C S D St vii P 2
'INTRO.DUCTION
C~dw~a oxde-crystalliies 5.i-only ope. bodificationj tha -face-eentered cabi:6
(halite tyrpe). the. ysl -vary in -colo6r ftro Iback -zwnor green U.o orange-yell-ow
atnd! yellow, -depending on the amiount of 'free cadmpiumprsent,. yEowdeis varyr in ,colow1due to the pafrticli- size. Thez cziytai growt-hplane, is -erally (n).The :habitis ,crucifctr, denritic or at orescent, inadtin he accl-crsas whic
for'.n ,an arc-furnace. 4 i-The lattic-e paraffeters. :ave been measrd humereu ie.Bl vausrneor
~ a_ -4-6991 A, to W.9 orv ue maeil o aftiu oxide -jsmokeP, -,a value
of 4.708 Z is given and for films two -values; 4.69XXai 4.7 69DonnaY2 -gives, two, values, for -crystalline material; density is 8.1-5 gAcm at 20tC.;C
Ia -= 4,;694-3 O.0O3ao = -4.7-08 O 0.002
Cadmium, oxide dedoMpbses, in vacuum at 350C -and a, mfetallic cadmium -iro apjpears,..
In Air,- Sublimation begips at _900 0 d. The sublimation point,, accordih& to -the latestava4ilable determiination is 15640 C', although loe-aus~av engvn)the
.HANDBOOK( OF CHEMiSTRY AND PYICS4 states that the suhblimation pont isaov ,426
Cadmium 6xide and, cadr;,i , fortn soli1d-_ _62ut, ons it 1 rpnin.-The---dissocia-
tion constant of theb"admium oxide decreases strongly with increasing -cadiium .content.
-The saturated solution of cadmlluni in the oxide 4s almost non-dissociative. On, the,
formation of -the solid solutionbyk heating in a- vacuums, the lattice constant of -the
$ colour deepens until 'it becomes black.. 'On tieating the, intertta camumsbime.
Tepresence of 6h excess of.free eletrons in the lattice ,of the ,solid solution :is
responsible for the n-type semicondicti vity of cadmium oxide as well 'as its catalytic
activity.,,
The thermal zonducti!-Vlty decreases m~arkedly with increase. of o yen pressure,
indicating increases *of interstitial oxygen in-the cadmium .oxide.1
44
-;-* M
Xlecr#4@ndg~tial neagw~eent.:b -s~dii .6* Q
Itp--99 s ad 1-914'js tbe- C) -oI:vAfi-oxJ
lu/h frfbt Iee lv -ta
cathe ,cdsufnd bxidis eng he dseo aoid films~44#1 fOre 1i~ ks a
I 2~~~pthe A forefi in -tresap pim laeabs eity$ wib tcltmsi17 -
'4 I~~~,b~ rtorage commn~ie scaast punamk .ick el ia txc.u fopsties --
cm akek - 2a-i0m Aorbi ~poed as -vAtron oiiiati bn-:bfdtb Ii-xtIns-d _ukd ~t-6
with arespc a l- elendctrica cohdu&.teiv~y anh ,d~k
oxie s now of amu oxd r stopnradW b.ig~r~e~i~y o duusurfacsA Thee imve 4Aparontl ,uifab cted y a i~as-,eIdncAI #s i -e A
- A~y ~cco maninicatol-n, .cdmum.,cdkide kde powdediojly-, ceb pr, ~2~~~c~s
inuoresecena -destihowy aftrocrionduet.*vith Thoitoef tIfat 4ne; - ns exngushed'
cm. anine -lum) asoed ga35 hmic ron g litefe14o -th f Vis -n.blc:uie
w mhseto toelria Aonduecrtipl and Ah cangreoith tetsoi uti I'te. pami
oide -a Jcnown Tt-hie cry trn srfc toivt asikoeviden ,ebyit usws~
b3odigt T ein caim teoxide Ros -t di2a1 ny25hdoidece~ o
formed edges and faces in t,. , (20,01plane. They are Ib~adk -,with .a 2,attice, donstant %f
4.6954. ,. Vrlow -amounts ,of bngeim silver land kcalcuniprtesaepeen 2
Cadtium 2oxide -is -pot ,superconductkve,. ,(Pef,. 13M,) -
Cadmiumfioxide. filmsj when doped.,-With cope anIni rfm~ ihyphtyotac
junctioni with selehiumi, Uhdoped films yield open circuit voltages vu -o , Vin,'7
sunlight. Copper doping .reduces the open circuit -potertial and, IndiW' dop' I ncra;pg~~~ q Qraa e
- - ~'2~~~ -~ F
it. ~ef~.294O5 2 , eilm 4ejposited 4at _I04' t+emperatu-nes is :usab et. It fist.bAZ 'e4 t4pratiA
stablie iyaneaiig. 7ime t~erTue of -t're~pia~isociie~,~t41is
:be dete minede ~e3mnt;Jly, eand this 5fraton g. thru by iered 1i 'the.
-Dresented -hem,.
'In- the, -hembtr.Zilc 1>pezbties zsectIon,, .elecfric. =odc-~~ d iheiffib
,c6nductit grhsi were aV-al able f or- the same samges),, -re gresented wVitW
thimal A-f ataA M-i ,br:erto fAcliftate ,cliavtion .o 01igure .6f -rniiit 'vakubs,:
..r.ss-referenici ng of germane inf orinati6n lis Aso _,provlded&.
XW!thin the indi-idul properties,, Araigemefit las ,gener@J'.-y !been- to zho 6-he
* uxe -,!aitple .datal followiedT!y -the tffects '.6 'Ppants (in a ahfibetaca odr; ;b
jpeir sea, ihowever., -is ,ften :iiot a alifyhg, faptop., andgrapihs,-may-:be,,anranged (6'
~~groiijp~~~4 acodngoexeiental jpArnameters..
lln -presenting tib~ulwa ,data,, ,valies- xte iiatickuE!' ag-ged. Jln sfine c'ases, -'
iby Aqra nt, in 6thers by -magnitude of mnumerical Tw.a~lue,. (On odcaslon~hw~e% h
walues ft, (one refrrnce imay, le tgro 6ed for (coupaion,.
'-Tbe 2references,, fz-om rwhidh -the .data are tdrawn, -are dhown lby z-cceslon znnier
L l~~elow each ,gr'afh, vith the full, libliogiaphic citatl6n- -tabul2ated iat the ,end odf the,
\data tsheets.. 'Te -hilbqgra hy is A~ted lby accession, iner,
7b,6 electrical conductlwlity of 1polycyt~ln -cdiu xd~ thoz6jza.
nealed, has. ~been imeasuxted .at *7 to '9 Go, 'The th~rfol energ gapbten:2R 4
~8O~ at hese fild agree with those measured in d..,c.. .fields.'
Accord"ng, to .-a rwecent zrticle'l in the M KAINSKY1 , ZYCHNY :ZHIURNM, 'tO' (adm'ium ioxid
film !has been studied as :a. transparent Lcontact f or (cadm~ium ,silf ide t3et Lbhotoconduc-
tors., lboth zingle =crstals and, films, \Volt-tampere and inoise dharamtdristills (of these,
.cadmium -oxide films indicate +hat it is 5a good. stable and transpitent ohmic (contact
and -is particularly effective -for Ion itudina gihotoeiectric kefficts,. 'The-'caam
oxide film :has a -resistivitY kof about ~3 x to 3 6 t, dr-n hi ei~v
5'o6x,, 3dm-6. lh§-ea,
ls ~tgi6xeo ibdepedent frog .1130k jo ASO, Mhe advtA#g&-v3- coutct charace-
2~~~~~seic ~ ~ ~ ~ ~ ~ 4Q -a eatbtdt h o~te~o i-n~hdti imon the
DDC az4 KASI tapes have been run -ro assm e cq~lzete cdvetaje for- th:is-u izteia1.
Very little Informzation is apparently &7-~a~c in the mprt literature-i fo r :UM-
1 Ott-INSHANHDBUCH DER ANO?-WINISCAEX CHEME; th Ed. Camiitii wilbeiz Virlaigdhe -ee. GinbH, 1959, m6. 418;-430.
D09NAY, XiD.. CRYSTAL bkTA. DtEE;MiXAfli tABLES. 2n-d Ed. ."6ca Crystlo,0-pby-A;soc. 1 1953.
3 LEHARCHANDS, H. M -nd, M., JACO19 M6e!IcA1 Ineria. SOC. 611A . DE FMVCE. BULL,j v. 5, no. 2,, 1935. p. 479:-487.4, HANID!30YK OF CHEMISTRY AND PHYSICS, 46th Ed. Cleveland'. Chexmical Rubber Pbihn
/Co.,i 6 .55-1966.
-" 5SIDDALL,, G. The -Prebaratidh of Electrolutid eet Panel-,. -YACIX, -7 aid.& 8
6 LUCAS, L.N.D. Oriehtt-d CI4icza1 drowth on-Single Ctystals, of Zinc arfd 6aduiiin. -I.ROYAL -SOC. 'OF LONDONI, PROC'.,- v. 215A, to. U-21, 3Rov. 25, 1952.Z. 162-1-74.
7 SUDDENi B. and R. POHL, ticiatelektrischie Leittmg und chemnisch6 Jindunhg;, 'Z. FiER-* PHYS., v; 16, 1923. P, 42-45. -
-8 LkAHRIG, R H. -Gi~Wh 6f Cad;iim-1M- Oxide Citlstalt. J. 0F- -APPDI-iw PHYS., V. 34,- 'to.Jan., 1963. p., 2347235.
9 bALT1RUSAlTIS and P. BRAZDZIUNAS. Electrical 'Conductiv~ity of Cdim Oxide inHigh-frequency Electilc Fields. LIETUVOS FIZ. RINKIIISi LIETUEVOS TSRMOSKLUAKAD, LITUO tSR AUKSTOSIOS MOKYKLOS, vi 4, no. 4, 1964. p. 537-541.
1b SVECHNiKOV, S.V., et a. OPhmilr Tr Ansparent Contact for 2-6 type Photocondur-t6rs.UMR FIZ. ZH., v. 11, no. 1, 1966. p. 40-r44.
_- _,' -' - t ---- -
j V-
~~bc ofS~a I g b
t# ,,Caoluq4*i ZI*- -
0
EMecti-oh, -traisitbn- Eiper uieV-)
OFA19
-P&o nr~dergy (e#J-),
icadizx6 oxide films of varmu conductivities. .25 J24 .6
Film, no, Conductivity ohm-cj )IY04- 5-0
2 35 '0O33 102
5 255
------------------- free -cax-rier coinponent t
-25the doped. films a-e, poor conductors; .purifyi-g 10.t increases conidutivity. The absorpti6n peaksrIshow- i re the maxium occupied levels.-I 5 10 5{
[e1f .4453)
5
... ..... i ANDTENN-O@,,,II 1" r~ * ai n,
AM FiW EAIMUM LANATOY - g P T ONAI FORCE SYSTEMS COMMAND
PREPARED MY ELIICTRONIC PROPERTIES INFORMATION CENTER * HUGHES AIRCRAFT COMPANY. CULVER CITY, CALIFORNIA
CADMIUM OXIDE
ABSORPTION
Photon energy (eV).25 .12 .0
0
4. 0RV2 - 4-
a10 (1 cm)'*1 o=(,250 61 cm)'*o[;) I '
0o~~oit ° J 0"4 d," _ '_ ,°/ h m -. .
=2 0 =)z5 10 1 5 10 i5
-4 , 0.4b -
5 10 15 3 0 0 iWavelength (u) Wavelength (p)
Absorption coefficient as a function of wavelength for cathode sputtered cadmiumoxide films. Films in a, b and c are variously prepared on a quartz substrateand variously annealed. Variations in atmosphere and cur-eent density during de-position develop films of different electrical conductivity as indicated by thecurves.
Films in d are from measurements in [4453) for films deposited on NaCl substrates.
Calculated from transmission/incident intensity without correction forreflectivity (a ' l/d log IoID)
D = transmissiond = film thickness
ID = transmission intensityI0 = incident intensity
-Absorption coefficient calculated from transmission measurements by use ofequation for interference for absorbing films.
[Ref. 22103)
6
PgSCAftCH ANO TECHNOLOGY DIVISIONAIIR PONCE SYST9MS COMMANO TI
PREPARED DY ELECTRONIC PROPERTIES INFORMATION CENTER~ e HUGHES AIRCRAFT COMPANY, CULVSR CITY. CAIgFORNIA
CADMIUM OXIDE
ABSORPTION'Transmission as a function of wavelength
Photn enrgy eV)for a cadmium~ oxide, n-type filmD 314 mficronsPhotn enrgy eV)thick. Preparation is by cathode sputtering
100 J .9 in a nitrogen-oxygen atmosphere. The sub-strate is single crystal sodium chloride.
s0 -eaurements are made at 3000 K. The re-
* suiting carrier concentrations aftero .0_ annealing the polycrystalline films are
~ 60 ~given below:
AnnealingTemperature
.0Curve nn. (1019 cur3)
O 2 4 6 8 10 12 14 + not annealed 1.60 160 10.0
Wavelength (pi) 0 300 7.0
[Ref. 7151J
Photon energy (eV)
.31 .16 JO
Absorption coefficient as a function -
of wavelength for the same highlydegenerate samples as in the above cgraph. Symbols for' curves correspondto those listed above.
0 4 S IWavelength (pi)
[Ref. 7151J7
RESEARCH AND TIECHNOLOGY DIVISION U fa m' MOAIR Ponca *Yoram@ COMMAND ~w n~r
PMEPARMO MY ELECTRONIC PNOPSATI98- INFORMATION CINTER e.HUGHES AIRCRAFT COmPANY. CULVSR CITY, CA.IFORNIA
CADMIUM OXIDE
ABSORPTION Absorption coefficient as a function ofphoton ene rgy for several n-type, cathode
Waveengt ()sputtered cadmium oxide films, between'Waveengt (U)0.1 and 0.2 microns thick. Measurements
3.1 4.1are made at 3000 K. The films are do-
4J the absorption values are correctedC) accordingly. Carrier concentrationS are
______given for films after annealing.~44 ~4 -Sybo5n (1019 cm-3)
00 ___ __ 1.3
4o1 5.70. + 9.0
x 15.5
4.0 3.5 30 2.5 2.0 1.
Photon energy (eV) Ee.239
Absorption coefficient at 3000K as a , aeegh(ifunction of pho ton energy for cathode I A1.4 As .52 M5 .62sputtered cadmium oxid e films pre-1.pared in a nitrogen-oxygen atmosphere, 0-00film thickness 0.12-0.16 microns.3.Electron concentrations in 10 19 cm-
3
are indicated as a parameter of the *1.0 .curves. The intrinsic curve is 1.marked 1( , with nn = 5 x 1016 cur3.
n is the variable ratio K/K0 . By Lcalculating n for a definite range 0 0.5
0and applying the theoretical curve,nI% to the family of absorption
0curves for various carrier con-rcentrat ion values, the theoretical 0- - - -curve cuts the experimental curves 0 3.0 2.S Le6 24 2.3 20at a point which indicates theenergy gap. As carrier concentra- Poo nry(Vtion increases, so does the energygap. [Ref. 22102)
8
RESNARCH4 PND TECHNJOLOey DI VISION II]~~Di~O NAIR FORC SYSTEMS COMMAND o C 'r~PREPARED SY ELECTRONIC PROP0RE INFORMATION CENTER *HUGHES1 AIRCRAFT COMPANY. CULVER CITY. CALIFORNIA
CADMIUM OXIDE
ABSORPTION
Photon energy (V.12.5 2.1 .96
1.00 - - - -- -
00
0.7dP I
0.60 -- - - - -
0.50 .4 .0 .5 .0 .6 .0 .7Waeent (i
Trnmiso a fntono avlnghfr0pttrdcamuoxide ilms, ll n-tpe, ude and doe ihcppro ni
Sptern wsdoeina10 xye-9%aro amspee3nopia
Tsmeshas aspa as hucih as thelnt pure saplutte cadowrum
oxie flms al n-ype unope an doed ithco er r(Refu. 245
9_
11911AC ANDA T9 OLOG DIlVISION~
PRIEPANILO 2Y 1L9?:TRONIC 1111OPERT1IES INFORMATION CININ H UGHES AIRCRAFT COMPANY. CULVI90 CITY. CALIPP@AMIA
CADMIUM OXIDE
ABSORPTION
Wavelength (ui) Wavelength (ui)- .30 A40 .50 .80 __ .30 .40 .50 .80
Ua _
o2.5
4-'~4- _____i~2.0
.4U 44
44 1.5 - 0_40)
1.0 1 ~04*
4J0.5 - -
4 0 3 2 14 3 2Photon energy (eV) Photon energy We)
Absorption coefficient at 3000K as a function of photon energy for cadmiumoxide films. The films are prepared by cathode sputtering in nitrogen-oxygeinatmosphere.
a) I Not annealed b) Same curves plotted toII Heated 1 hour in air at 2000C emphasize break in the
III Heated at 5000C in air non-annealed film at"4l.8 eV.
Sample conductivityW0~ (ohm cm)-1
a1 1.52
a 1.350111 1.10
[Ref. 118683
10
MREAPICi AND TECHN:" f DI VISIONIAim rOn4ex sysTI 1862 AND
FMCAR8 IY EILECTRONIC PROPKRTIEu INFORMATION CENTER HUGESu AIRCRAFT COMPANY, CULVER OfTV. CALIP*F&OA
CADMIUMI OXIDE
ABSORPTiION
Wavelength (Pi) Wavelength (Pi)
.30 M3 AO .50*0O .0 30 .3 0 00 0T".0--------TT
2.5-
4.'
4J.
4414
44
0 0U .,4 4dor 1.0- 4J0J
0____ 1030 K' 13730 K
10 K 3730K
4 3 2 432
Photon energy (eV) Photon energy (eV)
Absorption coefficient as a function of photon energy for a cadmium oxide
film prepared at two temperatures. The film was prepared by cathode
sputtering in a nitrogen-oxygen atmosphere, and was then annealed in air
at-5000C.
Evidently the shift in the absorption coefficient on annealing, leads to
a constant value; there is minimum shift during further temperature changes.
[Ref. 11868)
VR i I Im A ... " I I E
,AR1t4 ANO TACHNiL430V IVT 1:011 ILU-AIR OPORCl *Y$TIMI COMM
I_____________ ____________________Il____________
P ARSO flY ELECTRONIC Pa@P1Iy1as INFORUATION cuwvga • MuSU AISOSAPY COPANV. CULVER 4OT. ALIP@UNoeM
CADMIUM OXIDE
ABSORPTION
Dependence3 of resistivity and transmission of cadmim oxide films on theoxygen co ntent of the discharge gas.
Optical Tranumi sion ResistivitySputtering at A a 5460 A k g per sq.
Time Oxygen Baking Baking ThicknessMins. in Argon Before After Before After ,
5 100 77 79 18.3 1.9610 100 57 60 9.5 0.545 -15 100 47 52 5.0 0.315 -20 100 47 52 4.3 0.288 .0426
5 75 73 78 9.0 1.490 -10 75 56 60 6.3 0.440 -15 75 48 53 4.1 0.297 -20 75 44 50 2.3 0.238 .0509
5 50 78 78 7.9 1.690 -10 50 56 58 5.0 0.427 -15 50 50 54 4.8 0.290 -20 50 44 48 2.3 0.180 .0543
5 25 70 73 9.0 1.150 -10-_ 25 56 58 1.9 0.436 -15 25 44 48 1.8 0.182 -20 25 44 49 1.2 0.134 .0570
10 10 54 0.5 0.260 -20 10 50 52 0.21 0.126 .0509
10 5 64 66 1.2 0.520 -20 5 60 59 0.103 0.110 .0644
Note: The above films were sputtered at 3 kV and 0.3 mA/cm from a 45 cm diametercathode at a distance of 10 cm.
[Ref. 15410]
12
.... OXIDE
III P OtiC UI~~Il ONNA ND
• fllPANEO SV u.acIteowIc iFIOPgmiggI INPOuAveekl ClIYS * NIUNU Asl1 AJv @MP~lANZ G..VI.l @*11t CM.DIIPOIaN
C DM1IUM OXIDE
Dfl2E TEMPERATURE
ElectricalValue Resistivity Carrie Concentration
IKG (10-3 ohm cm) sapl n (1020 cm T OX Rof.
560 1.8 sintored powder 10 20-25 3070
ql2.3 61-250
29 " 23 100-260
0) 1.3 highly c'ompreused 7 100-700and eLntered powder
13
HE m AINIAI LDua=Sq[nQANCH AND TSCHNOLO@Y DIVDwON
AiFONCK SyaTEMI COMMAND
PREPAREO &V ELECTIONIC P@oPEIri !NP01MATION CENTER * NUdM4e A164OAFl , UPA*V. CULVr eTYV. C ld1FlA
CADMIUM OXIDE
VIfALECTRIC CONSTANT
5nboi Value sml Test Method L Ref.
- 5.6 CdO cathode sputtered optical 3000K 22103,films, annealed absorptionnn z 1.4 to 9x1019 cm 3 measured
6.2 powder oil immersion 3000K Ksanda*A a .6708 a
c. io the optical dielectric constant and is calculated from the r-fractive index.
*K4ANDA, C.J. Comparison Standards for the Powder Spectrum Method - Nickel Oxide andCadmium Oxide. AMERICAN J. OF SmI., v. 22, 1931. p. 131-138.
t1 pog c 525
14
AM FORM BOW .w U. 4f (F I .EO0 -SRtGEAAC44 AND T9CNGNOLOY *IVISfONAIR FORC- SYTEMS COMMAND ik W
PRZEPAZD BY ELECTAONIC *POIITIEl$ INrORMAV3ON vi[N .001 MUe8 ALlNAM ,I1AWV. : LIU ,IT', MF
CADMIUM OXIDE
DIELECTRIC CONSTANT - Photon energy (a!)
Three cufves showing the optical dielectric _ 9I J4 j1constant, as a function of the square of 4,5the wavelength. The 34 microns thick filmIis prepared by cathode sputtering in a 4Jnitrogen-oxygen atmosphere.
Carrier Concentration
Curve Annealing Temp. OC nn (1019 cm- 3 ) Ot0
+ not annealed 1.6 0 -1160 10.0 0
o 300 7.0 Wavelength (0s)2
[Ref. 7151]
S ' Xy. Dielectric constent as a function of
t__~______"_.._~_____x 40 photon energy in sputtered cadmium4J A oxide films, 0.2-1 micron thick.m k. " x WAVELENGTH, # (ju )
\ X Carrier Concentration.' -'k. X" Sample n, (1020 cm"3 )
u \2 12.1\ 2 6.55• -1 3 1.32
241 28 .22 J9
Photon energy (eV)
A2 (,)2 ) () eV
10 3.2 .3920 4.5 .2830 5.5 .2340 6.3 .19 [Ref. 5183]
15
-A v =- -I
R1169AICH AND TI1CHNOLOGY DIVISION - EPCEI NPORDWA"ONA I R O R C r Y T KrM C O M M A N D, C [m m = [ [a
PREPA-4EO INY ELECTRONIC, PROPERTIES IWNORMArlON CRNTrIN * IUGHNE AIjtCRAFT COMPANY. CULVERR CITY. CALIFORNIA
CADMIUM OXIDE
EFFECTIVE MASS (m*)
Sample No. 55 56 57 o50 T9. OK
Hall coefficient (10- 9 .M3/coul) 2.4 3.7 16.5 30.3 300
Thermoelectric power (WV/OK) .090 .103 .174 .214 500
Effective masc ON/mo 0.10 0.11 0.15 0.15 300
[Ref. 109041
Sample-No. 36 22 15 7 20 35
Sintering time (hours) 0.5 0.5 0.5 24.0 0.5 0.5
Sintering temperature (OK) 1200 1000 930 920 1100 1200
Temp. OK
Hall coefficient (to 6 kOe) 14.5 17.0 20.5 3.6 2.5 5.6 300(10- 9 cm3/coul)
Electron carrier concentration 4.3 3.6 3.1 17.4 25.0 11.2(1018 cm- 3 )
Temperature coefficient of 11.3 18.0 13.9 3.7 1.4 4.3
resistance (i0-5 ohm cm/deg.)
Effective mass mA/mo 0.05 0.08 0.05 0.08 0.06 0.06
[Ref. 10904)
16
RESEARCH AND TECHNOLOGY DIVISION IAIR FORtCE SYSTKMS COMMAND-
"'" "°" '" ....""...°"."..°......... ..
PREPARED BY KLECTO... pROPERTIES INFORMATION CENTER * NU0HE8 AIRCRAFT COMPANY. CULYSenl, I IiAOliA
CADMIUM OXIDE.
EFFECTIVE MJASS (mA)
12-
C" 0
W bO
S 4
2 6 10 14
Carrier concentration(1020 cm-3 )
Electron.effective mass as a function of carrier concentration in cathodesputtered cadmium oxide films 0.2 to 1 microns thick. Carrier concentrationvaries from 1 x 1020 to 12 x 1020 cm- 3, measurements made at 300 0K.
[Ref. 5183)
Symbol Value Sample Test Measurement Temp. Ref.
n 0.16 film, n 1.25 x 1020 cm"3 optical absorption, 1i3 & 17670
0.14 A = 1-2.5 microns 2930K
m 0.14 cathode sputtered films. electrical conductivity, 20- 22103
annealed at 5000C. Hall and thermal emf 7500C
n 5 to 50 x 1020 cm- 3 measurements, alsooptical absorption
17
AIR IF M NAMW AIUII PI ffiURP S -RESIIIAAG AND TECHN4OLOGY DIVISON I NPOR AM OTAI P ORCI SVY TEM COMMAND I
PMEPAR01) DY ULMCThONIC PfOtIPITI6 INFONMATION CENTRO HUGH IJS AInCNAIP COMPANY. CULV2* CITY. CAL#*IP IA
CADMIUL'I OXIDE Temperature (0 K)
ELECTRICAL CONDUCTIVITY 0 100 200 500
Electrical conductivity as a function ofreciprocal temperature for cadmium oxide -
films. Curves are non-reversible.
Cathode sputtered in oxygen, >annealed in air. 4J
1 7 a Cathode sputtered in air,annealed in vacuum.
IIb Annealed in air.
III Cathode sputtered in nitrogen-lowoxygen atmosphere.
1/Temperature (i0 3 K-1 )
[Ref. 3926)
Temperature (OK)
500 250 166 125:>I I I ' I
4,-
'- -28 Log electrical conductivity as ao- function of reciprocal temperatuie
o for cadmium oxide powder samples
0 -2 compressed at 1000 kg/cm2 and
"4 0r, treated with oxygen.
4-'
S -2 4 1 ~ J---J---J0 2 4 6 a
!/Temperature (103 oK'1)[Ref. 12730)
~18
A--ONAMOAMB P - o luama HFISEARCN AND TrECHNOLOGY DI VISION WPMAIR FORCK SYSTEMS COMMAND I
_j C ENIE
PRUP~ARIED MY ELECTRONIC PROPEITING INFORMATION CE1NTER HUOH&S AIRCRAFT COMPANY. CULVER CITY, CM.IP@RNIA
CADMIUM OXIDE 20 WELECTRICAL CONDUCTIVITY
Electrical conductivity as a function 1.6o:f- frev electron concentration, expressed AaG nn VI3 (1027 CM-3 ). The temperature01.parameter of the curve is shown on the .graph. The samples are sintered cadmiumkoxide pellets. Slope of conductivity > 1.2against n' i linear in keeping with 4the Hcworth and Sondheimer theory. .0 .
0C-)
0.8
2.0 3.0 4.0
Electron carrier concentrationnn~ (10217 cm-3)
[Ref. 20243]
300 4250
Specimen I
4) 1
F) Electrical conductivity as a functionof temperature for two pressed and
.,q 0.'4 0 sintered cadmium oxide strips.~:' '4'
ISO Carrier ConcentrationSpecimen n(102 cm-3)
0 LSpecimen II 0C) .) 7.5
tOO 400 600 gooI 5.5
Temperature (OK) ef219
rly.219
ASO 9 ' Cc Gy*TIMi COMMANC[
P;VFzEyj Gy SLECTMONIC PROPiRITIC INFORMATION CSNTER * NUOHS AIRICRAFT COMPANY. CULVER CITY. CALIFO*NIA
U~.071174.- OXIDE
ELECTfLCAL RESISTIVITY
"-4 .
,-44
0 0
2.25 3.5
> .. q-,,4
3.) U)
4) 0 50 100 150 209 004 0
Temperature (K)
Electrical resistivity as a function of temperature for two pressed sintered cadmiumoxide strips. The solid lines are derived from values of Po, A, and 0 chosen to givethe best possible graphical agreement in the formula: P Po + I Theexpression for neighboring values of 0 are shown as broken lines. A is the temperaturecoefficient of conductivity and varies with the impurity concentration of each sample.
Temp. Carrier ConcentrationPane(°K) Specimen n (1020 cm- 3 ) p, (ohm cm) 0 (OK) A (ohm cm)-1 /deg
20-250 1 10 .0018 560 2..51-250 2 8 .0023 450 2.0
-- calculated
Debyevalues
[Ref. 3070J
20
rEAf¢i1 AND IRCHNOL00Y DiVIIOV 4
iPnEPASR mY WULECrRONIC PR*W91T1k3 INFORMATION CENTft * NUGME A10ClAPT COMPANY. CULVEIR CITY. CALIrOIR#HA
CADMoZUM OXIDE
ELEC' }2RCAL RESISTIVITY
OF Electrical resistivity as afunction of temperatureduring sintering for pressedcadmium oxide pellets.
Sintering is accomplished at1 atm. oxygen. From 340-3800K>, the sharp drop in resistivityis believed due to increased
2 -contact of the microcrystals.
200 400 500 G00
Temperature (OK) [Ref. 20243)
Log electrical resistivity as a function 3
of log oxygen pressure for pressed and -0.1
sintered cadmium oxide pellets. Datataken at temperatures indicated on thecurves.V
S-0.3.
0 I 2 3 4Log oxygen pressure (mm)
(Ref. 20243)
21
-W . a F'?AMM LUMXIT)B . .
-AIM FORCE GYSTIMS COMMAND
Ii C E ' 7 1r 1
PRRD Y MLICTRONIC PROPERT1ito INPORMATION C6NTIR * SU@M6S AIRCRAPT COMPANY. CU16V9Q CITY. CALIFORNIA
CADH IU M OXIDE
ELECTRICAL RESISTIVITY
100%02~
4 - HEATING--.,-. COOLING-10,
7b5% I
25% Oil
100 200 OW 400 30Q too 10
Temperature (0C)
Resistance of cadmium oxide films upon annealing and cooling. Cycle from100-400+1000C over 75 minutes. Curves are given for films p0oduced in
different oxygen/argon mixtures.
The films are cathode sputtered in an oxygen-argon atmosphere on glasssubstrates for 20 minutes; thickness is about 0.06 micron.
Control of oxygen content at 5% yields consistently high-conductivity filmson low temperature substrates.
[Ref. 15410)
22
+'
rr !a L,,EC(+ 'ONOC
R%2A"%CN ANO TICHNOLOGY DIVIGION UDIN OhCX SYSTUMS COMMAND a r' a~rrlr
MZA3 [m SY KLIC'ItONIC PROPIEiIZN INFOtMATION ceNYSI * HUokes AIECInArT @@t00AN1. CU.Vg CITY CALIF00001A
CADMIUM OXIDE
ELJECT1RICAL RESISTIVITY000
Electrical resistivity as a function oftemperature for two pressed sintered cadmiua CUM
oxide strips. Carrier concentration is>1020 cm-3 . ,.-
'/
0 **.J I I W M
Temperature (OK)
[Ref. 21891
Temperature (OK)1000 500 333
030-. i I I i
0.25
0.200~2
0.15-40
S0.10
0.05-hS" I I I
0 00 200 300 400 500 10 15 20 25 30 35
Temperature I(C) 1/Temperature (10" OK - )
Resintance as a function of reciprocal temperature for pressed powder cadmium
oxide. The high temper,3ture curve is linear with an activation energy of 0.40 eV.
(Ref. 116534
11101ARCtl AND TECHNOLOGY DIVISIONI OAIR FORCES YSTEMS COMMAND
j _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ E NE
PgMgPAMELI BY ELECTRONIC PROPERTIES INFORMATION CENT2N N UGMES1 AIRCIPAPT COMPANY, CULVERIII CITY., GAIIP@R1141A
CADMIUM OXIDE
ELECTRONI SECONDARY EMISSION
Energy distribution of thesecondary electr~ons as afunction of the discreteelectron ene rgy loss at2500C. The curves areobtained from data taken__on a 0.5 mm thick cadmiumoxide disc, resistivityat 3000K = 0.027 ohm cm. MTile primary electron energy 0
4) C41
v is shown on each curve. .'4~ ~gooM
ViL,; tile collector voltage 41H4sIvV), Uis the initial current lcD4 0%Oj i he secondary current
310V
Discrete electron ene rgy loss V P Vk (V)
[Ref. 23133)
4J
Electron secondary emission ucoefficien-t as a function of 04
ILI 4 1.212incident electron energy forWsame sample. Q
0 200C 0.0
4) .0 Incident electron energy V P (V)-I4 ..-
Maximum value is 1.25 at 400W* volts and varies little with
temperature. 24[Ref. 23133)
IW--
1""ANCIAMO TIVANOI,4Y DIVISOION WOmN=aVOC1WYTH OMMAND
0119PARV MY SLECRONIC PROPIROTgg INFRIATI@N CeNTSO a 04UOHB AIRCRAPT CDOMPANV. CUL"V#11 CITY, CAIPORNA
CADMIUM WI-DE~
Change in Ene rgy Gap withVymhol TepeaureV/OK (104) buL Temp. OX Ref.
drg/ff -3.3 mm.~ n xj 1016 113-293 17670
*~'Cathode sputtered film 200-400 11868deposited in nitrogen/lowoxygen atmosphere
-6 *Same film annealed at!1000c
-2.6 to -5 Single c-'yatal 90-295 20385n =7 x 1019 Cm3a =1.3 x 10 (ohm-cm)-1
1---,c page 26.for toource absorption tneaourementri.
... . LAM M LO
AIn FOrCr 4YIT6MS COMMAND
PREPARK") &Y ELICTONIC POOPINTiN IEFOMATION CENTEi H NKu4eS AIACnAF " CHPANV. CULVAN CITv. CAUP04"8A
CADMIUM OXIDE
ENERGY BANDS
Shift In the absorption edge with temperaturet=.. for two cadmium oxide films.
1. This film prepared in nitrogen withlow oxygen.
II. Same cathode-sputtered film afteri, annealing at 5000 C. The absorption
-,- edge is measured at that wavelength
U - for which the absorption constantt is 2 X 104 /cm. This wavelength
varies with temperature but Is-J - about .56 micron or 2.2 eV. (This
o iOO too 300 400 is close to the energy gap of 2.35 eV,
Temperature (0K) given in this reference.)
[Ref. 11068]
04'
Square of the absorption coefficient as aifunction of photon energy for a cadmium 11 Noxide film at five temperatures between °&4
113 and 2930 K. The carrier concentration -
in 8.1x 101 6 cm- 3 .
ug2' is energy gap at 293 0K I-
Eg2 is energy gap at 1130 K -
Ks2 in the absorptior edge at OOK 3.5 fis .,2
Photon energy (cV)
26[Ref, tuOJ
~~~~~ ROlaiEIAEAUJ anITCA4 IC 4 ANO TCHNULOY OIVISIOINAIR PORCK VflYS COMMAND c
PROPAAtRD 19V I[UECTYONIC PMOPtRTlr INFORMATION CINT64 M HUM AINGRAFt @UMPANY. CU&V801 CMW1. CML .j'$*4A
CADMIUM OXIDE
ENEICrY CAP (Eg)
Value (eV) Sample Specification Teat Method OK Ref.
2.£ single crystal, reflectivity 295 20385
= 1.3 x 103 (0 cm)-n = 7 X 1019 cm"3
2 56 it9
2.35 single crystal, annealed 29528 hrs. at 6001C in oxygena = 1.05 x 102 (a Cm)-1
n = 1.3 x 1018 cm- 3
2. 4 1 98
'2.3 films cathode sputtered reflectvit~ 0 203390.1 - 0.2 micron thick 0.3-0.8 mirronT) 1019 - 1.8 x 1020 :m-3
2.35 cathode sputtered filns reflectivity 300 1J868
in oxygen or nitrogen,annealed in oxygen
27
P ROER-MTOESmAIMS'\NC IAD AI TEC NOLGYDTORN TC
AIR FORCE SYSTEMS COMMAND
pngpAc~go gy gLgcrxomjC POPERTIES INFORMATION CENTER . UGMUS ASACMAPT C@MPAWY. CULVan CoT., cM.#roRNSA
CADMTUM~ OXIDE
ENERGY GAP Energy gap at 200C as a-function of onehour annealing at temperature indicated onabscissa for sputtered cadmium oxide filmsprepared in-,
2.9 o I. Nitrogen-low oxygen atm.
e II. Pure oxygen atm.
1-, 2.7Curve I is annealed in air which causes the
NIROE energy gap to shift from 2.81 to 2.36'eV.
AIR4 25 - Curve II is annealed in air. This raises
54c 1I~ WE the absor'ption edge.
2.3 - 1 1Curve III Wx is the same film as in9 200 400 609 Ccurve II, annealed in pure oxygen.
Here, also, the absorption edge isTemperature (0C) raised.
If the film in Curve III is then annealedfoI hour in nitrogen, the energy gap is
again considerably increased.
[Ref. 11868)
Absorpt.on edge at 200C as a function ofelectrical conductivityat 200C for acathode sputtered cadmium oxide film- - -
annealed in air between 400 and 6000C - .followed by annealing at 350 0C innitrogen, oxygen or a vacuum. All ~ U -measurements fall on the same curve. - - -
-Annealing above 3500C causes an increase I -in conductivity and an energy gap 0 .--4
increase. A decrease in conductivity Wis connected with a shift in energy C . j Igap toward higher wavelengths (i.e., Eetiacnutvt t2
0
lower energy gap). (0 - m1
[Ref. 11868]
'dH FP R90fNTDE,,[SMC AD TICNOLOGY DIIaO ucn~1,1 R FORCE SYSTEMS COMMAND
C-RCPAftED SY ELECTRONIC PROERTIES INFOHMATION CENTER H UGHES AIRCRAFT COMPANY. CULVER CITY, CALIFORNIA
CADMIUM OXIDE
ENERGY GAP
2.60>. A O ~
Poiino0erilvl(Vbeo hecnutinbn
for limtingenery gposvalueof2.eV Fermi level Valereclulace frm eecton arreo conetatonustiong mand .4i
Asneg carrieraconcntion i the ermlee in casethoe ered. levelu
As ht caaye fronte cn dction an d wit a c comain increase in'F m lenerg
gap.
(Ref. 22102
FW I E4TUIS UNIATUT ~ irruAIRt TrR SYSTEMS COMMANDn2811ARCH~~ AN
ECH OL O D VI IO
IPn!.Ra~D BY ELECTRONIC PROPER0TIEB INFORMATION CENTER HUGHES AIRCRAFT COMPANY. CULVER* CITY. CALIFORNIA
CADMWM OXIDE
ENERGY LEVELS
Symbol Value (eV) Sam]ple Tm.Ref.
Er 0.6+*0.3 Decrease in Fermi level as 8000C 20243cadmium content increases withtemperature in a sintered powdern .- 1018 c-3.
ED 0. 4 CE Pressed powder, excess cadmium 11654.
0'
580yT6
Energy levels for a cadmium oxide film about 0.1 micron thick;indicated by optical absorption peaks. (See page 5 for graphof absorption coefficient showing four str~ucture peaks corres-ponding to various ionization levels.
[Ref. 4453)
30
P ROPA3P1TOER1612AlCH AN4D ?RCHNOLOaV OI4ION
^11, V*Cg SYSTE MS COM MA ND
FMPrA.'12 MY CLECTROMIC PmOPEXTIRS INIPOINMATION Cawvm*ff H* 19 ^41111CRSOAP? COMPAN. CULYSN CV. CAL#P@SMA
CADMIUM1~ OXIDE
HALL COEFFICIENT
tA -Hall coefficient as a function ofIS XM temperatur, for cadmivo% okid. at
different air and oxygen environ-ments.
0U
0
Temperature (0C) (Ref. 5248J
cw *
Hall coefficient as a function of 6oxygen pressure for n-type, twocompressed powder cadmium oxide;n '.3.4 x 1018 cm-3 .
.444404
102
Log oxygen pressure (mvA)
([Ref. 5248j
A" i La,. h ONF]C
r4WARCH AND TECHNOLOGY DIVISION4R. POfCP 3 EMS COMMAND
, [
PaCPARO SY ELECTRONIC PROPERYIES INPONMATION CENI* NUTS EHlO AIRCRAFT COMPANY. CULVER CTyt CW.9110"eA
CADMIMI OXIDE
IULL COEFFICIENT
3 5 Variation of the Hall coefficient with1 magnetic field for three cadmium oxide
30 pellets at 300 0K. The samples are
25- 2 pressed powder, sintered at 600-12000 K.. L i 2Electron carrier concentrations a'.'j 20- 2 x 1018 to 4 x 1019 -
0 In general, the Hall coefficient increases13 with decrease in electron carrier concen-
05 tration, i.e., curve 1 would be for thesample with the lowest nn.
0 1 2 3 4 5 6 7
Magnetic field (kOe) [Ref. 10904)
36.
Variation with temperature of the Hall 32coefficient for specimens of differing Uelectron concentration. Experimental 2 _
points are-shown in close conformity to 24curves drawn from theoretical considerations 41assuming m* = 0.3 mo and the characteristic 20temperature of the longitudinal opticalphonons is 5000 K. P4
q4 4
Compressed cadmium oxide powders, sintered at u600-12000 K, n = 2 x 1018 to 4 x 1019 cm- 3 . 08 OA indicates two curves for highest carrier -4
0 0concentrations. )A
0 300 400 500 600
Temperature (OK)
[Ref. 10904]
32
IRt$EAtM4 AND TKC#4@&o~y 02v;ION RPMAIR PORCR SvSTa"S COMMAND
IPARZmED my S.ECTRONIC Pinoowrin INPOltMArON C8INTI11 a HUw41E AIRAIV COMPANYl. CLVSI1 CIrY. CA6WrOt@ A
CADMIUM OXIDE
LIrETIME (r)
Lifetime, (10-15 3ec) Sample Specifications Method Te K Ref.
4.5 film, optical absorption 113-293 176701.25 x 1020 cm-3 at 0.35 to 0.6y
1.5 to 4.0 cathode sputtered optical transmission 300 7151films, A 1 to 14P
1019 to 1020 Cm-3
Microns 0J)V. tU 1.630 . .
s. o - •
Reciprocal average electron lifetime as a function iiof photon energy in cathode sputtered polycrystallinq Vcadmium oxide films annealed at 450 0C. Lattice 0-defects are removed by annealing to 500oC;nn = 5 x 1019 to 5 x 1020 cm- 3 . Further sample 0characteristics are not given. The curves are I0linear and are calculated from refractive indexand absorption measurements. The experimentalpoints are data for several varied films. The 10wavelength region is narrow because at 1.5 micronintrinsic absorption sets in and at 2.5 micronthe experiment- becomes inoperable.
00.4 0.6 O0
Photon energy (eV)
[Ref. 22103]
33
O:Lf \!CM AND T9CPNOLCQY DIVISION Iao* C w9IFuN
P222ARE~DY yt. ICTRONIC PmoPrm"7ES IMPCLVMATI604 CRHTGR N UOHRO AIRCRAFT COMPANYI. CU&YRR CITY. CA4.WPFOOIA
CADMIU-44 OXIDE
MAc-N3T IC SUSCEPTIBILITY
Magnetic Susceptibilityx (10-6 cgs) Sample Specifications Temp. OK Rf
-0. 2320 highly puri~ec1 powder 300 7119
34
AM~~ ~~ F= UUU ThO P aInvoseRlIEC0 AN* TaCHNOLOGY DIVSION ~lII ~Iz~CI~AIR ktORCi SYSTKMS COMMAND C ENTSM
PREPARIED BY ELECTRONIC PROPER11TIES INFORMATION CEINTIER MUSMES A111IRCAFt COMPANY. CULV90 CITY, CALFRA
CADMIUM OXIDE
MAGNETOELECTRIC PROPERTIES
Magnetic field (kOe)
4J
0 2 3
0al 2o 60 61 4
P/Po (x 105) at 5.8 k~e 5.2 4.7 2.9
Electron carrier concentration (1018 cm-3 ) 2.8 3.6 11.2
(Ref. 10904)
'AIR MU NAVUWI WU -P P RO uENrOuuRESEARCH AND TECHNOL.OGY DIVISION ESAIR FORCE SYSTEMS COMMAND
P1IZIPAREO MY ELECTRONIC PROPERTIES ONFORIATION CEINTER M UGHES8 AIRICRAFTr COMPANY. CULVERt CITY. CALIPOR60A
CADMIUM OXIDE
A 50
Mobility as a function of electron carrier,concentration in cathode sputtered films,0.2-1 micron thick. Optical data at 3000K>in the infrared (1.5-7 microns). 30
---calculated from Conwell-Weisskopf 2formula for mobility of degeneratesemiconductors
expeimetal urv fro c~tica r~tO0I experimental curve from eoeptical 0
data ,(pRHO). Discrepancies due to Carie c2ncenratio
high resistance transition layers (1020e contaton
in polycrystalline films (1ef. 5183)
Temperature (OK)100 .158 251 396 631 0)OO
2.2
,>
bO
3 1.4.
20D 2.2 2.4 fi 2A6 3.0 a1
Log temperature (OK)
Mobility as a function of log of temperature. Crystalline cadmium
oxide, n 1018 to 101 9 cm-3 , H =7400 Oe.
[Ref. 8798]
36
RalIAACH AND TEtCHNOLOGY DIVISION IAIR PORCR SYSTE[MS COMMAND I
~rEPAPED OV ELECTRONIC PROPERTIEU1 INFORMATION CENTER HUGHES AIRCRAjFT OMPANY, CULVER CITY. CAUtP@RNIX
4I-'
0u *I 04J~s t- 0 #-4 --4 Ot- 1-4 N ' m - ) (N
0 O -4 :111n C ) ~
. 4 "C.D 0 0 0 0 000 0
DA 4
., 4J( 4 O4 -,0 9
C') 0 )
0(
~ 0
a, 00 000o a oc coo tto 0J14-1) co 0 0 a) 0 : a, C C:, C")
0~tI 4, U) ' C)Ll H N *
c: 0
o0 00 00 0) 0 0 0m ' n m Cv) 04 r-4 H- U) a) a
-t 4(0( a) (V (C D w N CO m
00 0 0
in n 0 0 a 0 0 ) 0fU 0
CO ~ L 0~ ))a 0 ' ) 0)0 0 04
4-1 e4
4
040
10VH0 1
10 1
UU0)) *f
'~4C)
0 -C Oh 0j c) N4 '-4 (N ~ C~ t~- cy *-I 0241,
0> t ) -1 0 c') C4 -N C4( C-4 04' 0h--4 C14(
40-
RESEARCH ANO F8CHNOLOOY 0aVISION Roo I [N IP11FI-)V1d KT L> cAIR FORCE 9YST9M* COMMAND iPREPARED DY 11ECTRfONIC PROPIRTuES INFC01IIATION C INTER * IU41,191r AIRCRAFT CCMPAVP, CULVER CITY, CAIFRNI~A
CADMIU4 OXIDE
M.OBILLTY
000
3.0 ---- -
0L9.1-,
4
1.011
0 200- 400 (40 000o
Temperliture(i)
Reciprocal electron mobility as a~ funct~ion of' tem ?perature in cathode sputteredcadmium oxide films, annealed at 4500 C,n % 5 x 1.0193 to 5 x 1020 C.13 Thetcmperature coefficient of mobili'ty is almost constant as indicated on the cuzrvea.The lattice mobility is calculated to be 220 crn2/V sec at 3000K.
[Ref. 22103)
38
R'"ARCN AND 74CHNOLOOY DIVIION U ,
1!14 FORCE f. YarMO COMMAND
PnMPARED OY CLECTRON9C PROPERTIIE INFOqIATION C, U(14Eil AIRCRAFT COMPANY *-A
Ci.D,.UM OXIDE
REFLECTIVITY
Reflectivity as a function of wavele. variou.4 cadhiwn oxide :. °all measured at 3000 K.
Wavelength K.Wavelength (P) ' OA 03 OA OYU O .
0.35 0.4 0.5 o., o o., , -,r -- r -r- -r,, -r-i,-, a.- - ooY 4T- I
24
0 0.4 .,4H , w; ' Ic
-0.2 4) oil
4.0 3.5 .0 2. 2.0 1.5
Photon energy (e) to
Cathode zputtered, n-type 3.0 2.1 1.2 A2films, 0.18- microns thi,:, Photon energy (eV)n 15.5 x 1019 cm- 3 .
[Ref. 203393 Single crystal samplcs.Temperature, carrierconcentration an6 con-ductivity are given.
[Ref". 2 0385]
Photon energy (eV).. .62 .21 .12 .09 .L sputtered film, 34 ,microns thicA.
co 80--ol Treatment nn (1019 cGm 3 )
•, , _+ untempered 1.6
annealed at i04J 40 " 160 0 C
I! 20innealed at0- 3000 C
00 2 4 6 8 0 12 14 rR o . 15 !
Wavelength (G)
.3
0 Ff M MAT LADOSTY-ARC" AND ?SCHNOLO(OY VIVIUIONEPCI
Ati POCR S§YGTKMG COMMAND
P0PAPID BY LUICTRONIC PllOPEtiYgg INFCRMATION CgNTIR ' NUII6 AIRCIAFT COMPANY- CULVER CITY. CA11P@ORPMg
CADMIUM OXIDE
REFRACTIVE INDEX (n)
Photon energy :,V).31 .16 J03
.'-
'41
01
0 4 8 12
Wavelength (J:
Refractive index as a function of wavelength for a cathode sputtered
film of cadmium oxide, at 3000 K. Film is 34 micron thick.
Symbol Treatment nn 1019 cm- 3)
+ untempered 1.6
* annealed at 10160 0C
o annealed at 7300 0C
[Ref. 7151)
40
MOSE RCHM AN le4LOQV pDvasgI C MANDO,
C@NMItIOII
Pf!PAnZO IV ELISCTONIC PMOP9lTaII INFORMATION CIINTSR * HUG 45 AIRCRAF COMPANY. CULVi CITY. CALI@OONIA
* CADMIUM OXIDE
REFRACTIVE INDEX (n)
Photon energy ieV)
I . 3L4 .46 ,31
• a ' - - b,
Wavelength (tji ,
Refractive index as a function of wavele3ngth for cathode sputter~edcadmium oxide films fr;om 0.2 to 1 microi thick, at 3000K.
Carrier ConcentrationGraph n (102 0 cm- 3)
++a 12.1b 1.3.2
[Ref. 5183]
Value (n) Sample Test Method Ref..
2.49 powder sample oil immersion Ksanda*i ALi=.6708 micron
*'KSANDA,, C.J. Comparison Standards for the Powder Spect.ian Method -NickelOxide and, Cadmium Oxide. AMERICAN4 J. OF SCI., v. 22, 1931. p. 131-138.
41
P23AIC4 AND FECHNOLOISY SIVI&IONAin Ponca wyerems COMMAND
r'aarA.IU my FgLeCTRONIC Potor3ST16. INPFltl0ATION CVITER U,111 AliiiF 2 1 tlvlqCT kt~*
CADMIUMi OXIDE
RICKIRDSONPS CONSTAN~T (A)
Richar'dson'sa Constant,ap/-nm 2 de&2 ___ 1), 1 Ref.
1.-65 x 10-6 th-ionic ems .n 6037(GzXIpl3 specificationv'v0: a-.ullab1&
42
L"OA CC SYSVCMO COMMAND
PREARC (2 (ZLECTflONIC pftOPESIRMg INFCNMATICN CRNTEKR HU Atilt@ AIRCRAFT LCWPA%:~ -iN1;
CADMIUM OXIDE
THERMAL CONDUCTIVITY (k)
Value (watto/cin del) Ref.
0.007 1359
0.0000 46
1126AflC" AN4D ?UCNN@LO@Y DIVISION .iiAlt POftCK gYSriM* COMMAND i
PREPAR613 BY BLECYNONIC PROP6111TI2 INP'CUMATA@N CIINT9R M U113835 AIRCRAFT COMPANY. CULVKQ CITY, CALIFORNIAD
CADMIUM~ OXIDE
THERMOELECTRIC PROPERTIES
1400
0 / ThermoJlectric uif as a function of~.120T #I temperi1:ure for sintered, cadmium
4-1 1o (599 oxide powder heated 24 hours at~9 10000K i~d prepared as strips.
too-
9 Carrier Concentrat ion90, ymb.L (119 m-I
a) 1.7
T -x 1 .6 [ R f .2189J
500 400l 60 O ~crystallinle mfaterial,3c.ther loose powder or
Temperature (OK) pcllets. (Ref. 5899]
1-1W
Eletrca codctvt a
funcionof empratue fr 4.4 i-U 40 o0 1.7 44)
U)04
444
F= MiriamP ROPERIUZRftSEARCH AND TECHNOLOGY DIVISION 3 O MA MOAI R FORaG IySTEME COMMAND H
PrMUPAR,.o BY ELECTRONIC PROPURTIES INFORMATION CENTER H wUewas AIRCAFT COMPANY. CULVER CITY. CALIFORNIA
CADNIUM OXIDE.
THEIREOELECTRIC PROPERTIES
o100
M Thermoelectric emf as a80. function of temperature
for sintered cadmium oxideU 60 pellets. Power curves are.- 50 calculated for a freeU electron concentration of:
o 30 a) 2.26 x 1021 cm "3
10 b) 1.58 x 1021 cm-3
E- A __ji I200 300 ,00 500 600 700 800 (a)300 400 500 600 700 800 900 (b)
Temperature (OK) (Ref. 20243)
S1.0-
OI.o0.8
Rcsistivity as a function of 0.6temperature for pellet (b).
0.4
U.1 0.2-
4, ft.i • I I
300 500 700 900
(Ref. 20243)
Al VU kWhAIZ USINEAIISMUOSA CM-AND TECHNOLOGY DI VISION p r u~ o o uAift FORCE *YG73MS COMMAND C ~ i u
PREPARED mY BLECYAONIC PROTESg INFCRIiAAION C U 58133 AIRCRAFT COMPANY. CULV901 CITY. CALOPOSI41A
CADMIUM OXIDE
THERPOELECTRIC PROPERTIES
Temperature1K Temperature (OK)
060
S -0.00-
-- 12 -4 I 4 I
l/Tempera i 1 0 " 0 K1 )
Thermoelectric emf and log elt3ctricc- (,c,-ucvity as a function of reciprocal
temperature for pressed powee'n cadm> -Id .mp rpae noxgno
air at several pressures.
311. MM En oiyg (Ref. 11654:
IV. 7-2 7n a.LrV. 7'17 -: o:cygan
(11) -0006
too C ~ .4- 0 -0.07 ,IV
-0.04
M 0). 0.09
Log oc:ygcn pressure
ThemIoelectric emf and log electrical conductivit:y as a function of the log oxygenpressure at four temperatures for pressed powder cadmium oxide.
.[Ref. 11654]4 b
W&RSAftCH AND TgCNNOLOGY DIVISION mg#R FO3C9 SYSTEMS COMMAND
PREPARED RV ZLCYR0NIC PROPERTIES INFORMATION CKHSM * IUGH40 AIRCRAFT COMPANY. CULVES1 CITY. CALIFORNIA
I W 1I '= ----. ]+
CADMIU.M OXIDE
THERMOELECTRIC PROPERTIES
t~4 -40 4
____ -30, -30
a_ I_ ___20-20
tOO , 200 300 400 0 K 0 100 200 300 4000K
190
Q)3 185 01030HIa
f .180
TI-175 - 25 - Tr04 Temperature (OK) ()
Thermoelectric emf and electrical resistivity as a function of temperaturefor compressed cadmium oxide powder.
A nn = 5 x 1019 cm" 3 at 2930 K, ,, 0.35% excess divalenit cadmiumions.
B Annealed in air at 320 0C for 72 hours, " 0.5% excess divalentcadmium ions.
[Ref. 12730]
ftCIEARC94 AND TECHNOLOQY DIVISIONAIR FtORCE SYSTEM$ COMMAND
PRIPAIRZO BY ELECTRONIC PROPERTIES INFCRMATION CENTER * 14IE AIRCRAPT COMPANY. CULVER CITY. CALIFORNIA
Flamm
CADMIUM OXIDE Temperature (OK)
98jOCm 500 333 250 200THERMOELECTRIC PROPERTIES
4j '4
Therqnoelectric emf as a i-function of temperature * 4 12for dense cadmium oxide 4- >pellets,, prepared by 0 1calcining cadmiumcarbonate pellets.
00CTh- three curves8represent data taken r
on three separate 6%samples.
4--------------I2 3 4 5
1/Temperature (103 OK-i)
[Ref. 5899]
120-
after thorough100 - annealing at
5800C
after >1Thernoielectric emf as a function ofan ~rti y temperature for cathode sputtered
450lCng , cadmium oxide films, thoroughl~ annealedat 5000C. n~ 5xlON9 to 5X102 cm-3
..- l SO(Annealing smooths the curve.)
r40040
"'immediately
deposition
0 100 200 300 400
Temperature (0 0) [Ref. 22103]
48
CMEIAPICH AND TECHNOLOGY DIVISIONAIR FORCE SYSTEMS COMMAND
PPUPArED DY EL.4CTRIONIC PROPETlIE NN )0U3II AIRCRAFT COMPANY. CULVER CITY. CALIFORN A
CADMIUM OXIDE
THERMOMAGNETIC PROPERTIES
Temp ,,nte C 4J,0) 100 156 251 ;,3 51 lo9 H,
1.2
2.2 2. 4
>2.2 .4 2.6 2.6 .3.1
:.og Temp :,tue- (0
RIIARC I AND T9CHN0LOGY DI VISION. IAIN POP- SYSTEtMS COMMAND
PffPAR&C) DY ELECTRONIC PROP911TIRS lNFORIlAY.Ot 5*i AIPItAPT COMPANY. CULV9PR CITI. CALIFOXNIA
CADMIUM OXIDE
WORK FUN~CTION()
Work Function,_eV cativrement Ref.
2.143L~Ii emrissioa 6837
REFERENCES
'The information in the underlined reference numbers was used in the preparationof this data sheet.
2189 WRIGHT, R.W. The Variation with Temperature of the Electrical Properties of aDegenerate Electronic Semiconductor as exemplified by Cadmium Oxide. PHYS.SOC., PROC., A, v. 64, pt. 4, Apr. 1951. p. 350-362.
2564 GEN. ELECTRIC CO. Study of Thermoelectric Generator Materials. By N. SCHWARTZand W.J. VAN DER GRINTEN. Interim rept. no. 1, May 13, 1958 to Mar. 1, 1959.Contract no. DA 30-115-ORD-960. ASTIA AD-217 234.
3070 BASTIN, J.A. and R.W..WRIGHT. The Electrical Conductivity of Cadmium Oxide atLow Temperatures. PHYS. SOC., PROC., A, v. 68, pt. 4, Apr. 1955. p. 312-315.
3790 PRADAL, F. and C. GOUT. Pertes caracteristiques d'energie des electrons dansle cadmium, le tellure ex le selenium. Characteristic Energy Losses in Cadmium,Tellurium and Selenium. ACAD. DES SCI., C.R., v. 252, no. 17, Apr. 24, 1961.p. 2534-2536.
3925 HELWIG; G. Elektrische LeitfAhigkeit und Struktur aufgestlubter Kadmiumoxyd-schichten. Electrical Conductivity and Structure of sputtered Layers of CadmiumOxide. Z. FUER PHYS., v. 132, no. 5, Aug. 1952. p. 621-642.
4453 MILOSLAVSKII, V.K, Optical Properties of Thin Layers of Cadmium Oxid" Ln theInfrared Spectral Region. OPT. I SPECTROSKOPIYA, v. 3, no. 3, 1957.p. 251-257.
4665 LANDER, J.J. Survey of Semiconductor Chemistry. In SEMICONDUCTORS. Ed. byHANNAY, N.B. 'N.Y. Reinhold Pub. Co. 1951. p. 50-86.
5183 MILOSLAVSKII, V.K. and A.I. RANYUK. Optical Constants of Cadmium Oxide in theInfrared. OPT. ANE SPECTR., v. 11, no. 9, Oct. 1961. p. 2P9-292.
5248 HOGARTH, C.A. Hall Constant of Cadmium Oxide. NATUrE, v. 167, no. 4248,Mar. 31, 1951. p. 521-522.
5899 ANDREWS, J.P.. Thermoelectric Power of Cadmium Oxide. PHYS. SOC., PROC.,v. 59, pt. 6, no. 336, Nov. 1947. p. 990-998.
6837 DUSHMAN, S. Thermionic Emission. REV. OF MODERN PHYS., v. 2, no. 4,Oct. 1930. p. 381-476.
7119 PPASAD, M., et al. Diamagnetic Susceptibility of Cadmium Ion. INDIANACAD. OF SCI., PROC. A, v. 31, 1950. p. 289-299.
7151 FINKENRATH, H. and M. VOLKMANN. Optische Absorption und Dispersion durchLeitungselektronen in Kadmiumoxydschichten. Optical Absorption and Dis-persion in Cadmium Oxide Layers by Conductivity Electrons. PHY;. STATUSSOLIDI, v. 2, no. 7, 1962. p. 850-856.
:!
89Y8 CIDILKOVSKIJ, I.M. The Nature of the Scattering Process of Carriers Atrrivalent- Pentavalent -Type Compounds and Some Ionic Crystals as Found byTher:nomagnetic Measurements.* In INTERNATIONAL CONFERENCE CN SEMIC0NDUC'ORPHYSICS, PROCEEDINGS, PRAGUE, 1960. New York, Academic Press, c1961.p. 96-100.
* 10544 CORNISH, A.J. Arrays of Inorganic Semiconducting Compounds. ELECTROCHEM. SOC.,J., v. 106, no. 8, Aug. 1959. p. 685-689.
* 10904 WRIGHT, R.W...and J.A. .BASTI4. The Characteristic Temperature and EffectiveElectron Mass for Coiiduction Processes in Cadmium Oxide. PHYS. SOC., PROC.,v.,,71, pt. 1, Jan. 1958. p. 109-116.
11654 HOGARTH, C.A. Some Conduction Properties of the Oxides of Cadmium and Nickel.PHYS. SOC., PROC., B, v. 64, pt. 8, no. 380, Aug. 1, 1951. p. 691-700.
11868 STUKE, J. Die Optische Absorptionskconstante von Kadmiumoxyd. The Optical,Absorption Constant of Cadmium Oxid!. Z. FUER PHYS., v. 137, no. 4, May 8,1954. p. 401-415.
* 12730 COLIN, Y. and R. TUFEU. Sur les proprietes semi-conductrices de poudresd'oxyde de cadmium. On Semi-Conducting Properties of Cadmium Oxide Powders.ACAD. DES SCI., C.R., v. 256, no. 20, May 13, 1963. p. 41959-4198.
13280 BALCO RES. LAB. The Development of Electrical Conducting Transparent Coatingsfor Acrylic Plastic Sheet, by DALIN, G.A. and J. RENNERT. WADC TR no. 53-378,pt. 3, Contract no. AF 33-616-111. Apr. 1956. ASTIA AD-99 564.
13331 BYLANDER, E.G. Semiconductor Materials for High Temperatures. ELECTRO-TECHNOL.v. 72, no. 3, Sept. 1963. p. 123-127.
13648 MEISSNER, W. and H. FRANZ. Messungen mit Hilfe von fluessigem Helium. IX.Supraleitfaehigkeit von Carbiden and Nitriden. Measurements by Means ofLiquid Helium. IX. Superconductivity of Carbides and Nitrides. Z. FUERPHYS., v. 65, 1930. p. 30-54.
15410 HOLLAND, L. and G. SIDDALL. The Properties of Some Reactively SputteredlMetal oxide Films. VACUUM, v. 3, no. 4, Oct. 1953. p. 375-391.
* 17670 FI14KENRArH, H. and H. KOEHLER& Temperaturabhaengigkeit der OptischenKonstanten duenner Cadmiumoxydschichten. Temperature Dependence of theOptical Constants of Thin Cadmium Oxide Films. Z. FUER NATURFORSCH.0v. 19a, no. 10, Oct. 1964. p. 1236-1237.
20243 LAMB, E.F. and F.C. TOMPKINS. Semi-Conductivity and Thermoelectric Powerof Cadmium Oxide. FARADAY SOC., TRANS., v. 58, pt. 7, no. 475. July 1962.p. 1424-1438.'
20339 FINKENRATH, H. Die Optischen Kontanten von Kadmiumoxyd im Bereich der-. Eigenabsorption. The Optitual Constants of Cadmium Oxide in the Intrinsic
Absorption Range. Z. T'UER ANGEW. PHYS., v. 16, no. 6, June 1964. p. 503-510.
52
20395 MOLLWO, E. and R. STUMPP. Das Refl.exionsspektrum von Kadiniumoxyd-'Einkristallen im Geblet der Eigenabsorptionskante. ReflectivitySpectrum of Cadmium Oxide Single Crystals in Intrinsic Absorption EdgeRegion. Z FUER PHYS., v. 184, no. 3, Apr. 8, 1965. p. 286-292.
20405 IAKSHMANAN, T.K.' Optical and Electrical Properties of SemiconductingCadmium Oxide Films. ELECTROCHEM. SOC., J., v. 110, no. 6, June 1963.p. 548-551;
22102 FINYENRATH, H. Uber den Einfluss Freier Elektronen auf die OptircheEigenabsorption von Kadmiumoxyd. Influence of Free Electrons on theIntrinsic Optical Absorption of Cadmium Oxide. Z. FUER PHYS., v. 159,1960. p. 112-124.
22103 FINKENRATH, H. Uber Beziehungen zuischen der Optischen Absorption undDispersion und dem Leitungsmechanismus dUnner Kadmiumoxydschichten.Relation between Optical Absorption and Dispersion and the ConductivityMechanism in thin Cadmium Oxide Films. Z. FUER PHYS., v. 158, 1960.p. 511-532.
23133 GOR14YI, N.B. Discrete Electron Energy Losses and Secondary Emis:;ion fromCadmium Oxide. SOVIET-PHYS.--JETP, v. 10, no. 2, Feb. 1960. p. 242-247.
219IOFFE, A.V. and S.S. SINANI. Thermal Conductivity of Oxides of Group IIElements. SOVIET PHYS.--TECH. PHYS., v. 25, no. 9, 1955. p.'1659-1661.
24170 SCHARMANN, A. and J. EULER. Veraenderung der Leitfahigkeit von Nickel-hydroxid und Cadmiumoxid durch Bestrahlung mit Neutronen. ConductivityChange in Nickel Hydroxide and Cadmium Oxide by Neutron Irradiation.NATURWISS., v. 53, no. q, May 1, 1966. p. 224.
53
UnclassifiedSecurity Claslllicati,1n
* I DOCUMENT CrMTROL DATA.- R&D(S rl lssiiainof title, body- of aba tras and indexmS .ariegaaion must be enueredm4ex Aeoioverall rport 4m, claiid)
1. RIGNATNGACTIVITY (rCopoate awai X&,)0T8CRTVCASFCTOHugbes Aircraft Company -~UnclassifiledCulver City, California 90232 14GRUP
5. REPORT TITLE
Cadmium Oxide
D.ESCRIPTIVE NOTES (Type of report and inclusive dales)Data Sheets
S. AUTHOW'S) (Last mnv, first ,i.nw, initdial)
Neuberger, M.
6. REPORT DATE a OA O O A4 rmr
June 1966 42 OA O PP~t 7.IO PRPem. CONTRACT ON GRANT NO. AF 33(615)-2460 94L ORIGINATOR'S RZPORT NUMSES)
DS-149b-PROJECT No. 7,381
cTAKNo. 738103 #b. oTmn PonT HS(An othriwrbers hatdmw be
d.
Ia AAIAULIY/IMTAIO NTIESThis document is subject to special export controlsand each transmittal to foreign governments or foreign nationals may be madeonly with prior approval of the Materials Applications Division, Air ForceMatprial T.a~hor*n' (MAAM)- WvihtP11. SUPPLEMENTAR NOTES I'M SOSI 0E1 % LITA y A CTV
Lkdr Force Materials Laboratory (MAAM)Ssearch and Technology DivisionIr Force Systems Command
RACT rijtht-Patterson AFB. Ohio 45433
These data sheets present a compilation of a wide range of electronicproperties for cadmium oxide. Electrical properties include conductivity,dielectric constant, Hall coefficient, and mobility. Emission data havebeen broken down into the varied electron and photon emissions which resultfrom application of electromagnetic energy over a wide spectrum, -Energy datainclude energy bands, energy gap, and energy levels, as well as effectivemass tables, and work function. The optical properties include absorption,reflection, and refractive index. Magnetic data are presented, as well asseveral other physical phenomena, such as Debye temperature. Thermoelectricand thermomagnetic properties are shown. Each property is compiled over thewidest possible range of parameters including bulk and film formn, fromreferences obtained in a thorough literature search.
A summary of crystal structure and phase transitions has been included.
DD PORAN 641473_ __ _ _ 1UnglAngifleAad sfca~
UnclassifiedSecurity Classification
I . . LINK A LINK a LINK C"OI W? A!L L WT 41101. WT
Cadmium Compounds
Cadmium Oxide
Semiconductors
INSTRUCTIONS
1. ORIGINATING ACTIVITY: Enter the name and address 10. AVAILABILITY/LIMITATIO4 NOTICES: Enter any lmi.of the contractor, subcontractor, grantee, Department of tations on furth-ar dissemination of the report, other than thoaeDefense activity or other organization (corporate author) Imposed by security classification, using standard statement@Issuing the report. such at!a. REPORT SECURITY CLASSIFICATION: Enter the over- (1) "Qualified requesters may obtain copies of ii11 security classification of the report. Indicate whetherreotfm D.
'Resriced ata isIncude. MwinsIs o b Inaccrd.(2) "Foreign announcement and dissemination of thisance with approprinte security regulaions, report by DDC Is not authorized."2b. GPOUP: Automatic downirodin is specified is DoD (3) "U. S. Government agencies may obtain copies ofD~irective 5200, 10 and Armed F1orcea Ir~dustrial Manuel. this report directly fromt DDC. Other quailiied DUCEnter theru number. Also, when applicable, how that users shall request throughoptiona markings have been used for Group 3 adGroup 4as authorized..______
REOTTTE ne h omlt eotttei l (4) "U. S. military agencies may obtain copiesa of this3. REOTreport directly from DDC. Oher qualffeusrcapital letters. Titles in all caes shouldf be unclassified, shall request throughIf a meaningtful title cannot be selected without classifica-tion, show title classification in all capital* in parenthesis ()"l itiuino hsrpr scnrle.Qalimmediately following the title. ()"l itiuino hsrpr scnrle.Qai
4. DESCRIPTIVE NOTES: If appropriate, enter the type of fled DDC users shall request throughreport. e.f., interim progress, sumnmary, annual, or final. ________________________Give th nlsv ee hnas crprigpro sIf the report has been furnished to the Office of Technical
cov~rcd.Services, Department of Commerce, for sale- to the public, idi.~.AUTHOA(S): Entrtenm~o a uhr) as shown on catc this tact and enter the price, If known.
or in the report. Enter last name, first name, middle Initial. ISPLMNAYNTS s o diinlepasI militar, show rank and branch of service. The name of 1.SPLMNAYNT~ s o diinlepasthe principal auth or Is an absolute minimum requirement.toyne,
6. EPRTDATk: Enter the .date of .the report as day, Il". SPONSORING MILITARY ACTIVITYt Enter the name, ofmo. ear.I thmnh er fmr te n aeapas E departmental project office at laboratory sponsoring (pay.onth, ear.or motya.ufmrshnoe date ofP5f pulcto-ng for) the research and development. Include address.
7o.TOTL NMRE OFPAGS: he ota pae cunt13 ABSTPACTi I.Ster an abstract iving a brief and factualshoul fOTL NorBER nFPGS hoa proer gie ent theuff.ry oft the document Indicative of the report, evennhulbd foflwna pages i 'ntion ronu,ie.enrth though It may also appear elsewhere in the body of the, tech-
nmeofpgscontain Infrain nies reort. If additiokal apaue Is required, a continuation7b. NUMBJER OF REFERENCES: Enter the total number of sheet snall be attacked.references cited in the report. It In highly desirable that the abstract of clasfied re-8a. CONTRACT OR GRANT NUMBER: If appropriate, enter ports be unclassified. Each paragraph of the abstract osallt h- applicable number of the contract or grant under which end with an indication of the military security clsassificationthe report wea written, of the Information In the paragraph, represented as (1'S). (S),8h, ec, & Sld. PROJECT NUMBER: Enter the appropriate (Cr I.military department identification, such as project number, There iosno limitailoa on the length of the absiro., How-subproject number, system numbers, task number. etc. ever, the suggested ktngth Is from 15 to !25 words.9uo. ORIGINATOR'S REPORT MUMBER(S)t Enter the offi. 14. KEY IORD5: Key words are technically meaningful termscial report number by which the document will be identified or short phrases that rhcit rerlae a report and may bwe used asand controlled by the originating activity. This number must Index entries for catalogjig the report. Key words must behe, unique to this report- selected so that no security classiflcst ion is required. Identi.
"A.~~~~~~~~~~~~ OTl EOTNMEtS:I h eothsbe ers, such as equipment model decignat ion, trade name, mill-9.agd anHE otherT report I iumer (the rbyeorgnas o beey project cade nowe eoraphlc location, may be used assaiged ny the reprt umbrs eiter b th orgintor key words but will be (lowedir by an Indicat ion of technicalof b th spnsor, aso nte thi tubers).context. rh#. assignment of links, rules, and weights In
_____________________________________________ optional.
Unclassified
. 1"U1C m202IIS tyra17IY CD~TJ (Eric) 101104 WWWWAt.15 Sipet *.. AM-044 .e So. 1912. Pleat 09"Vtcml Co.. (1(. 0. Hall1 Sts. 9149), Culver, City, WolfeWst 6112 (Come. moot to" July S. 1961 - owme Is9. 1902. N.Y. Johnso. C. 6edwad 9.", talloss.. fit pp. (AX-SW 9"1)
W4,) AWT-?N42-449* Part St. Al.i 1469. N.Y. fabo , NP4. gtfhA. bi... (m w W a k dm. tr m. 16I, sas 060r a Am). - ,W
Alj*-) tl 1i 1o-t. O "a,37.SlS uy 296w. 144 pp. (AD-44o 10' (A54401 Aft)
=1 ~-m o,,!de .T. MlJk, Narob 1966, 141 pp, (414o~ VS)) Thi4. N Work from94 Pammy ",* a .ms - dam u .. Jehei)1 lIW17'M O10.1 (-t.~) Jroptims mod Thermal Czodistl.1sy. N. Mou C.ov ( ami foamdm. 6,161) 4
*qrr IM,5. . 2 pp. (AD-40 630) IV -W lov o il)PMSft"l 04.14004 roIJLZ-1 Iv~ryll'' Oxide. J. . 1411.2. Marchb 191. 21 pp. (AD-O 01 8) nJo"&e Al", t ommau aso Iia d&m .eat. (Coers"igso R'b~mo A-944.11L01 M ""t GaSe. ... H1441. OwSS .1910, 1US $. (A*0-602 173) Im- jamr $1, 104 so pp. (4-064 zo)
L l~7 ~ J.7. N1103t. June 1962. 25 PP. (2-'e18 85) Auw ebrw epeot if and ban$,6L Mia . ifa som. 56.19 It"0. "e5eit, 502.72 1 : r1ti. .T. P110. Avaust 1042, 29 pp. (AP-42.1 629) (ro tioe pow.a kn . 11 1A4 44-44
t l77 5 1!2vnl Ni~l*. 4.?. 110. Junsa 114. 'iS M. (AD-OII W0) ai" was, we I-owneeportsW Shot doefwhb t. .etb.sbamt. P 91eDO-41 y- c,,, .T.. "1. Ausut 1061- 27 pp, (AZ.451 Se)) apesettame, --- smi soeeppl aa of 'RIC.)
L_1 ... K15.C3n. rotruary 152.3 9 pp, (AD-%11 834> ctictrasie Popuotis of Neteo4.2e A bWde 44 thd Lutm11w. 9411.4 by N.?.
smiom. t W. Bow Yor. lAsum tress. IMS. 2m4 pp.. siso...
qj ~ a~g lna .3.. HiWoS Kovsabul 1S. ", .IIPp (A".08 007) 0)5Select leaatoo sibUiepp. Aqvaet ImI. "4 PP.t,,. 1 4,) loxsrLucriiu. 3.7 lo. October' '.24. 5 pp. CA4.01 10) 21 Ileotucul Coim#AtIvfty and Resistivity' of Weated satale AM! All"&-
No Pau. 165pp.-4n~) . 0.4 o1. PNh PL hepeotie of tbe 100 Swne* 60.1.1... Ptm..
r'1~v1cIydrooorboal &Llntr Nobillty 1P, s . *1. t Ooe.6Io k~*22127 9.4m, .7. 911.2. rabruary IllS. Bib pp. (10-465 151) 0. Copkaoo~ of IftotaN Njo U00eb.Lel CefiNOVlItY COMM AIMP..
1:u-1L5 Vibno Torn3ahlts. .2.7, 92.1.2 .ltm 1942. It ff- W-041. WO) Auiiit 17. IS44. 09 PP
TO- L!3 1y.fJ lestical A $-&t. of the Art Report. .3.. N14. Ot4o 1113. Saoevier of P"ei.6wto mate4.2. ad S1..e t advouib at an p7 eI*UD,2 M_ (A1-473 505) fma~.( irip. lw,14.P p
Co~tne~croC2y~ea lisina C.5.bleo. am.104. 5 ppI, A sib1Jpopbr *1 wSqemotr Bowie" mod NatteI. bom 1104. 1 pp.S07) Mros recent is 69WtL81 RePent 9.2 WOW v) 7. A Compist~mift osmoS at Cbmp4 Ivemiso 60#1400 - COWWWWe.
L..7 '.:fuorhlm otylm Plastics. c. Schaefer. 4tr. 1962. 20 P?.uit 16 1 p
'A-",L2 guo) 9. A sibicaIot f so No s lbsoma...etris Proportise of onspor. dold.11-1) icmnt Rutr. J.7. M12.2. Jme 1993. 05 PP, (AD-Ol 906) SIIWo. .4 thi* ALI~AFe AaMtM 1. 1964. H5 ff.
1-3 ~ ~ ~ ~ ~ ~ ~ ~ ~ 0 a1a~hln (Tflimpi ort~e AsLs Son T . 11Lro66*...I maseti PropwtLee of &uleted 1.0.2...1 L.Septsm2ar 1M4. 1%4 pp. (AD-007 795)
Nvme s$10. A UbhlefP" 40 NKgh topgautaw oleleeti materials *ewe 9)
41-141 Dki . [X. Criamby. November, 1964. 104 pp. (AD-945 95) Scene). Oeob 11. 1S41 S PP-liaDa.!js 0Nc!5.m Allcy. and Compow'.ds. D.L. CrIgaby. Jar.aun" 114. 2117 Pt.. IV. a ilingraphp of subh Teertures Elototal, Coodutaw fiafw u. Noer
1445. 0s pp.~C~1. ~2.t1. fri EC .rtll initial p710tina to *aahausted,
rI-it ~mnLonA.rtla.nldo- N. Nubrer. 0ejpt9W)te1 142. 43 pp, (55-40 $60) ;3, A Bibliograp .6 tCAPOVAReLasn* E des., "Ai Pattiag Combh.D--147 DIoat Telluride - DlivSt Islinide 4060'. N. NMayben~er. Dec.40.' 1965 Say 11. 1914. 103 pp. ("v'ision 02)
14.5 pp,. (AD.07? 55) It0. A hefsranc. List o itmmalma Ouije Dielectic flame. January 211 14.r:-2.' -,m Oxi.~Cade. M. 1Neubea~er. Juno. IN9.1 .
Lg111 bnjonm vienids. sq. Niabirsr. November 1073. 50 pp. (A0-425 216) Is. A List of Vltro b frequeny Refeormoee Containing te'ash.atDlats . Juuary I2 1 pp.
V-124 Cadmisa Culfids. summery Review. and Beta Shoots. N. 0a64a91aW. Aotit 1. A compilatli . as r-c.4..m and v~irl-Cai moltterlee. JmKWYI,;,,2. _ 1!,S pp. (AS-412 tOc6) 196. 60 pp
11-111 (.1~t 7'.711wids. M. esouboerw. Js 1162. 091 PP. (10-415 $51) 17. A Suleeted S1014giepby OW SOUe OR 3aM. filtif. eWAM~P 1166. 60 PP.D:;. j 2 .I uAntimno. ", youberger. otner 1162. 51 pp. (0.0)3 775) Lt A ilagvm u inNo ru f 18 LO#0ite 8d
12-.1,2oo''Arumli.M. Neubtra'. Wpil 1165. 122 PP. (*0."S 114) selated antopantio. lamuap 1It". 4 pp.12-15 5..pbuerindo and the oeIlLm Arsoritde-Goihlom Pho"phLi Spitam. it. Couseod Ono a"4 uiarovil .66111.. 0IriA.. taovei, 1164. 1 PpV
M. !i..,buaror. July 1905,1.%9 pp. (AD-467 527) 20. A brief AftimpapOp So the glegnrioel Pwrti~e adi This nalme if v1-CeL', -an 141 . Naeberer. rabauer 1940. 226 pp. (AD-61O *28) Alloys. rawe~wy 1440. 1211 pp.
1) Picent AcqtjisitL0fS 00 GOsaAIlm. Neoc 26, 154. 169 RAat 21. Critia Coan at omm avet Dasmltlee of Selected su10r.6mloct~m mst*Lkz11-llL~1. Atltd (nd Ed.). ') ehoa. December 1115. 201 pp. robu.iams 1605. 26 pp.
I 715 4) 22 rioetricea .t~0Jt5 of Nopeolm Goide. mosS, 196. IS pp.I.J. 10ldj.. &arzoide. It, U~uborga. Juo 122 97 pp. (AD-401 0592) 22. LEvavoetd "liesoqh o Alviimm Atleii. Witr4ds. Pha0puid. Arueside
11-12 14hnoll~4ids II 5i~bersw.Jens296. 299. AD-Ot *,1)and liem'athLdo. ltho &W,6 if5 pp.ZW-I M ~ -2hu 7e2miis. 11. Neuerger. 2... 112, 27 pp. (A"-L% 6) 15.8Noee, wd14. 6pp
nod nlonis. ., goubrgr. Sanocal 112. 2 . (AD.5 90 2s, A sib"iussagi do AsLag Zdoosee. ?eOa#g.46~p oahei' fLate1m0 hlrl . S.fobrr. December 1"?2. 43 pp. (A9.051 10) ga a"4 £fImaut vasuorin of. 1964. I
I Nut16 Toll ie. M . eobargr. Octobs IM0. 10 PP. (*-427111 5,) 1*00 ~ ~ IB md.Pop26.2 p17. KtostrloeI Pesistivity So08 And Piiegepla am Titseluad Titemium Allay.
LI 1" -nsnum Stu'nide. M. Neuber'ger. November 1162. 23 pp. (AD-0:12 625) Norb Is". " pp.cqms i. M. )Icu."rgna. FJ7 1200. 2049 pp. (AD-t4 7"4) ;I A ComLuetL. an the ftsomias"Lo 5660. o laman &yuoemahmt-e.N
1)Ii cltAqu1,itto5 on Cllico. May INS.. 222S ksrs. 1964. *%pp,7'*cmC~tl. I, ube.-gar. itm.9 1250. _M pp. (AD.010 1#11 A624 5It"S 6
Mo~Cil.I uobsrgwr., octobar 1962. m00 pp. (*0-02$ 21) A6soa"U 0 lnmnII"o-"W IM o&t" p±r .Im 4.. 5...bargr. "p,10.b.P 140. 20 pp. (AD-421 9641) jn Sfwwt.Uit 16 $NLPodloft PlasWttsjMuafm N 194. 6t, pp.~ 1..lid. m. Maiogar -nd D.E. Gris-by, 34ee 195 12. PV As pp.
4p) 4v7 285) 41- Ublogroliqsoa r~bor Opt~.. April A166. 04 0.W. gutossr.JUV lo , 2 ppM-%) Ca)23. A bibliegvoplq, "6 P-M Jumtjme COuyrlsd Of Il-V C~m1S NMW 1964-
30. Sate o" Lu t .obresuf"aps vans"I f Opett isof ""lu Isoo4aolodiii
':.7 11irncy, of 11amtI..n!c rmo'p ot.. Laii "huater., San.awI. INS. of V. ;t. A Litmw* &Nffv so fte" Comlacts 12-I smimbctot Matia. v6
1n0r4 sta of la.t.at to 4&.y of our .marv.
