Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
Avago Technologies
Uncooled, high speed lasers for
DATACOM and TELECOMMay 27th, 2011Marina Meliga
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Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
Avago Technologies
0
1
2
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2005 2006 2007 2008 2009 2010
Driving forces for increasing of bandwidth demand (1)
(*) International Telecommunication Union http://www.itu.int/ITU-D/ict/statistics/
BILLIONS of
mobile phones
2010: 5,3 BILLIONS of mobile phones, mobile network available for 85% of world population (but not everybody can buy one…)
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
Avago Technologies
0 100 200 300 400 500 600 700 800 900
Africa
Asia
Europe
Middle East
North America
Latin America/Caribbean
Oceania / Australia
Millions of users
2010 2010
11%
21%
58%
30%
77%
34%
61%
(*) http://www.internetworldstats.com2010: 2 BILLIONS OF PEOPLE in INTERNET
Driving forces for increasing of bandwidth
demand (2)
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
Avago Technologies
….and the social networks of course
30.000 servers
200 Terabit/day (> 1000 more than traditional mail)
500 millions of users
30.000 servers
200 Terabit/day (> 1000 more than traditional mail)
500 millions of users
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
Avago Technologies
Huge acceleration of bandwidth demand
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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A very “hot” topic
• 4% of energy in the world used for telecommunication (1 server=1 SUV) and it doubles in 18 months.
• In 10 years we will have x64 of increase
• New technology platform needed!!
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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Optical transceivers are now used in all network segments
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Long Haul
City to City
Enterprise
Building to Building
Storage
Rack to Rack
Server
Board to Board
Chip interconnection
Chip to Chip
Today Next
Metro
City
TELECOM DATACOM
Market grow
EML
Cost ����
T Range ����
DFB
Cost ☺☺☺☺
T Range ☺☺☺☺
VCSEL
Cost ☺☺☺☺ ☺☺☺☺ ☺☺☺☺
T Range ☺☺☺☺ ☺☺☺☺
FP
Cost ☺☺☺☺ ☺☺☺☺
T Range ☺☺☺☺ ☺☺☺☺
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
Avago Technologies
~250 x 250 mm
LASER
XFP(78 x 18mm)
X2XENPAK(100 x 50mm)
Evolution (since 2000)
PLUGGABILITY: PAY AS YOU GOPLUGGABILITY: PAY AS YOU GO
Transceiver modules requirement:
• Strong limits in space available and power budget
• Wide temperature operation (0÷85oC)
⇒⇒⇒⇒ Requirement on lasers:
• High temperature operation (uncooled)
• Low cost, high manufacturing yield, high reliability
• no compromise on High performance
(high bit rate, high optical power, high spectral purity, …)
Pluggable transceiver: the enabling technology…
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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• InGaAlAs MQW
• Active material suitable for high speed and high temperature operating devices
• Ridge structure
• Best technique for reliable Al based lasers with high fabrication yield, oxidation risks and process steps are minimized
• λλλλ/4 shifted grating
• Typical problems related to grating phase at facets are negligible, ~100% single mode yield and no dynamic effects due to spatial hole burning
• Selective Area Growth
• One step EPI growth, no reliability issue related to Al oxidation in multisection/integrated devices
25Gb/s 1.3um DFB
4x10Gb/s DFB 1270-1330nm
Semi-cooled (40°C), 10Gb/s 1.5um EA-DFB
Dev
ices
Technology platform for uncooled DFB laser
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
Avago Technologies
OC48 (4CG4), 10GbE (4CG5), 10Gb Sonet (4CG3)Uncooled DFB Laser for XFP, SFP and SFP+ platform (2005 – 2006)
L
L/2 L/2
Phase shifted grating
70C-5C
10 G Sonet on XFP module
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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InGaAsP-based MQW
(Agilent, 2001)
0 10 20 30 40 50 60 70 80 90 1000
5
10
15
20
25
30
35
40
Current (mA)
Power (mW)
T0=48 K
T=20-100 ºC
Active material: our path of performance improvement10 years of active material engineering leads to massive improvement of temperature performance
InGaAsP Bulk material (50 mA Threshold at 80C, CSELT, 1995)
InGaAsAl-based MQW
(Avago, 2005)
0 10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
25
30
35
40
0 10 20 30 40 50 60 70 80 90 1000
Current (mA)
5
10
15
20
25
30
35
40
Power (mW)
T=20-100 ºC
T0=95 K
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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Production started in Torino on November 2006.
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
Avago Technologies
Long Haul
Metro
StorageEnterprise
< 300 m
2-20 km 20-100 km
Equipment room
< 50m
Today’s Optical Networks
•Optical transceivers are now used in all network segments
•10 Gbps transceiver market is finally taking off
•Same trend will occur at 40 and then 100 Gbps
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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What’s next?
16Gb/s FC, 40 and 100 Gb/s Ethernet standard
• (IEEE P802.3ba)
• for 40Gb/s (40GBASE – SR4, 850nm, 4 x 10GbE; 40GBASE – LR4, 1300nm, 4 x 10GbE CWDM)
• for 100 Gb/s (100GBASE – SR10, 850 nm, 10 x 10GbE; 100GBASE – LR4, 1300 nm, 4 x 25GbE, DWDM)
• 16G FC standard for Fiber channel
• Standard and MSA have focused the technology development:
• 16G FC transceiver SFP+ (Avago 980nm, Opnext 1300nm)
• First 40Gb/s and 100Gb/s CFP MSA (Multi-Source Agreement) Opnext, Finisar
• Pushing the DFB technology up to 25Gb/s uncooled !
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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17G/25G 1300 nm DFB laser: eye diagram Key results
20Gb/s 20Gb/s 25Gb/s 25Gb/s 17Gb/s 17Gb/s
70C
20C
50C
70C
20C
50C
70C
20C
50C
• 17, 20 and 25Gb/s
• 4.5 – 5 dB e.r., 20 – 70 °C, positive mask margin
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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What next: 100G SMF Optical Module Roadmap
Source
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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Area and Power Dissipation of Optical
Modules
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Sources for 100Gb: monolithic approach 4×25-Gbit/s, 1.3-um, Monolithically Integrated Light source
Takeshi Fujisawa (NTT Corporation, Japan); ECOC 2010, invited
• Application: 100GbaseLR4 and ER4 (10 and 40 km) 1300nm
• Now CFP with 4 TOSAs, WDM filter
• To move from CFP to smaller size (CFP2/?):
• integration
• Low power consumption
• Standard specifications
• dynamic extinction ratio (DER) larger than 4 dB for LR4 and 8 dB for ER4 system
• EADFB good for both LR4 and ER4
• Then NTT approach
• Monolithic integration of EADFB and MUX (MMI)
• 2×2.6 mm2
• Quarter wavelength shift DFB
• Ridge, buried in BCB
• Shallow ridge EADFB, deep ridge MUX
• InGaAlAs
• Double “ butt join” (one also fro the low doping cladding in the MMI…)
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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Photonic integration trends Single InP Chip for DQPSK
⇒⇒⇒⇒ Photonics on InP
Infinera, (OFC2009, OThN2) Transmitter PIC for 10-Channel x 40Gb/s per Channel Polarization-Multiplexed RZ-DQPSK Modulation
High complexity; system on a chip….
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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… Or will be Silicon Photonics?
ECOC 2010, John Bowers, Dept of Electrical and Computer EngineerECOC 2010, John Bowers, Dept of Electrical and Computer Engineering, UCSBing, UCSB
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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Silicon Photonics; Hybrid approach: die level
• Another material for gain (hybrid approach)
• Bonding: Die level
• Flip-chip (Luxtera)
ECOC 2010ECOC 2010
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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Silicon Photonics; Hybrid approach: wafer level
• Another material for gain (hybrid approach)
• Bonding: wafer level
ECOC 2010, J. Bowers, Dept of Electrical and Computer EngineerinECOC 2010, J. Bowers, Dept of Electrical and Computer Engineering, UCSBg, UCSB
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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Avago Technologies San Jose
� Product R&D
� III-V Device R&D
� Marketing
� Application Engineering
Fiber Optics WW OperationsAvago Technologies Italy
Turin Technology Center (TTC)
� III-V Devices R&D
� Product R&D
� Advanced Technology
Avago Technologies Singapore
� III-V Device Manufacturing
� Transceiver Manufacturing
� Product Development
� Marketing
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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Epi layer
How we do it……Technology: 1) MOCVD Epitaxial growth
MOCVD reactor
Epi growth
substrate
MULTI QUANTUM WELL
substrate: InP:n
InP:p
<10 nm
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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How we do it……(2) Processing, from EPI layers to chip on wafer
photoresist
SiN
1) photolithography1) photolithography2) Chemical etch2) Chemical etch
UV
mask
Photolithography
� 70 nm line in 75 nm thick resist
� 200 nm pitch lines
Electron Beam Lithography
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Wafer bars Coating /cleave
How we do it……(3) Scribing: from wafer to single chip
Chips
Scribing Dicing
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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How we do it……(4) Automatic testing
What are What are LDIsLDIs??
Laser Device Inspectors are automatic systems for 100% device testing and screenings System capabilities and scope:
•Test: pulsed measurements on chip @ R.T.:
•F/B LIV, spectrum, rev. leakage, chip size and tilt
•10G FP, 10G DFB, EML
•Purpose: characterisation (chip level) for 10G FP, 10G DFB, EML (Wafer validation/qualification and 100% Pass/Fail production screening)
Your Imagination, Our InnovationFOPD III-V Devices - Edge Emitter
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• Reliability has always been the key strength in a III-V world
• Customer reliability expectation is almost compared to the ‘telecom” field, but for low cost – consumer products
Long endurance test (45000 h; 10 years at worst case
operating conditions)
How we do it……(5) Reliability