D. Passeri et al. – 4DInSiDe – 2019/12/05
4DInSiDe
University of Perugia ActivitiesMeeting 2019.12.05
A. Morozzi(2), F. Moscatelli(2,3), D. Passeri(1,2),
(1) University of Perugia, Department of Engineering, Perugia, Italy(2) INFN of Perugia, Perugia, Italy
(3) CNR-IOM, Perugia, Italy
D. Passeri et al. – 4DInSiDe – 2019/12/05
Outline
√ On-going/Accomplished Activities- TCAD model validations via comparison with available test
measurements (p-i-n structures irradiated up to 1×1016 1 MeV n/cm2).- TCAD bulk radiation damage modelling evolution
(3 levels vs. 2 levels).- LGAD structures simulation including radiation damage model.
√ Planned activities- Understanding of dopant deactivation effects.- Identification of the most radiation-hard structures.
√ Facilities/Man Power acquisitions- Dell PowerEdge R640 Server (2×Intel Xeon Gold 6230 2.1G, 20C/40T)- AR (1 year) – March 2020 / February 2021.
2
D. Passeri et al. – 4DInSiDe – 2019/12/05
TCAD radiation damage model validations
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√ AIDA2020 Deliverable: D7.4 - TCAD Radiation Damage Model
D. Passeri et al. – 4DInSiDe – 2019/12/05
TCAD bulk damage modelling evolution
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√ Surface damage (+ QOX)
√ Bulk damage (3 vs. 2 levels)
η
η×2η/2
Strong sensitivity of the Electric Field peaks
position to the introduction rate of the acceptor level (defects concentration).
Depth (µm)
Ec-0.545
A
A’
D. Passeri et al. – 4DInSiDe – 2019/12/05
TCAD radiation damage model validations
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√ Comparison with test measurements (p-i-n structures irradiated up to 1×1016 1 MeV n/cm2)
Charge Collection for PiN diodes.
M. Ferrero, 34th RD50 Workshop, June 12-14 2019
C-V
10050 150 2000
3 Levels
2 Levels
D. Passeri et al. – 4DInSiDe – 2019/12/05
LGAD structures simulation
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Active Volume: 55um + 2um p++
nstrip:- Width 14um, Pitch 40um - Conc 1E18 cm-3
gain layer: - Peak-Junction distance 690 nm, - Conc 6·1016 cm-3, - StdDev 140 nm
Substrate doping (p-type) 3·1012 cm-3.
Φ = 1 � 1016𝑐𝑐𝑐𝑐−3Φ = 0
