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V. Characterization Methods

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    V. Characterization: Probing the

    Structure of Nanomaterials

    Experimental observations andmeasurements of the structure andbehavior of nanoscale materials are

    challenges that are being met successfullywith a host of techniques involvingScanning Probe Microscopy, for the mostpart.

    [Springer Handbook of Nano-Technology,ed. Bharat Bhushan, 2004]

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    Methods for the Characterization

    of Nanoscale Materials

    -Overview and motivation

    -Introduction and terminology

    -Application to a system of interest

    -Microscopy (EM and SPM*)

    -Data collection, analysis and

    interpretation-Capabilities and Limitations

    *(EM) Electron microscopy (scanning and transmission SEM and TEM)

    (SPM) Scanning probe microscopy (atomic force and scanning probe)

    Prepared by C. B. SCSU.

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    Overview and motivation Purpose

    Why is characterization necessary?

    Link to materials science and nanotechnology (what are therelevant structure-property relationships for the application?)

    Focus Nano-size materials and structures Examples nano-application: semiconductor industry.

    Semiconductor industry must specify info. of interest

    Advanced characterization techniques necessary

    Present and future trends for application Ultra small scale features represent challenges

    Know the limitations of characterization techniques

    Combine complementary methods

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    Correlation between Structure

    and Properties of Nano-materials Relevant features of nano-structures:

    Morphology form and structural properties

    Thickness or surface roughness

    Elemental/Chemical composition

    Qualitative what is present?

    Quantitative how much is present?

    Crystallographic structure and defects

    Identify crystal structure; presence of defects

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    Methods for observing nanostructuresOptical Microscope SEM SPM

    Sampleoperating

    environment

    ambientliquid

    vacuum

    vacuum ambientliquid

    vacuum

    Depth of field small large medium

    Depth of focus medium small small

    Resolution: x,y ~0.2 m 2 nm (TEM:

    0.1nm)

    0.1 - 3.0 nm

    Resolution: z N/A N/A 0.01 nm

    Magnification

    range

    1X - 2 x 103X 10X - 10

    6X 5 x 10

    2X -

    108X

    Sample

    preparation

    required

    little freeze drying,

    coating

    none

    Characteristics

    required of

    sample

    sample must not be

    completely

    transparent to light

    wavelength used

    surface must not

    build up charge

    and sample

    must be vacuum

    compatible

    sample must

    not have

    excessive

    variations in

    surface height

    *1 nm =

    0.000000001 m;

    1 m =0.000001 m

    ResolutionHuman Eye

    ~0.1mm

    The challenge:

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    Energy Regimes for Material

    Characterization

    Energy Example applications

    1 eV Possessed by evaporated atoms arriving at a substrate

    5 eV Possessed by sputtered atoms arriving at a substrate

    10-20 eV Required to ionize neutral atoms (Ar ~ 15 eV)

    20eV 1keV Possessed by emitted Auger electrons

    1 20 keV Possessed by Primary beams in SEM, AES, SIMS

    100-300 keV Possessed by primary beams of electrons in TEM

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    Characterization methods:

    Scanning Probe Microscopy(SPM)SPM methods include scanning tunneling

    microscopy (STM) which exploits an

    electronic tunneling current, atomic forcemicroscopy (AFM) which measuresminiscule forces between the probe andsample, and transmission electron

    microscopy (TEM) whereby a beam ofelectrons is transmitted through an ultrathin specimen, and scanning electronmicroscope (SEM) which images

    electrons scattered from a surface.

    http://en.wikipedia.org/wiki/Electronhttp://en.wikipedia.org/wiki/Electron
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    Scanning Tunneling Microscope

    (STM)

    STM was developed by Gerd Binning and

    colleagues in 1981 at the IBM Zurich

    Research laboratory (Nobel Prize, 1986)

    Sample

    Metallic tip

    "

    The STM image of Si(100) surface shown below

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    The STM as an Atom Manipulator

    a STM image showing iron atoms adsorb

    on a copper (111) surface forming a

    "quantum corral

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    Atomic Force Microscopy (AFM)

    The AFM was developed by Binning et al in1985;

    Flexible

    cantilever beam

    Sample

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    AFM Modes of Operation

    Contact mode -- repulsive modeNon Contact mode -- attractive more

    There are two distinct regionsdominated by: attractive andrepulsive interactions.

    Veeco Practical Guide to SPM (http://www.veeco.com/library/resources.php)

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    Transmission Electron Microscopy

    section of a cell ofBacillus subtilis, takenwith a Tecnai T-12TEM. The scale bar is200nm.

    Concept of

    transmission

    microscope

    http://en.wikipedia.org/wiki/Bacillus_subtilishttp://en.wikipedia.org/wiki/Image:TEM.jpghttp://en.wikipedia.org/wiki/Bacillus_subtilis
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    Scanning Electron Microscopy

    (SEM)

    Pollen grains taken on an SEM show the

    characteristic depth of field of SEM

    micrographs.

    http://en.wikipedia.org/wiki/Image:Misc_pollen.jpg
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    Electron MicroscopySEM vs. TEM

    SEM

    TEM

    sample

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    Some general Features of Electron

    Microscopy

    Data Interpretation and limitations Beam interactions image interpretation is complex

    Resolution limited by beam diameter and there are

    trade-offs between resolution and signal intensity.

    Sample preparation Sample must be thin enough for e-

    beam transparency.

    Tip effects must be considered

    Resolution is limited by sample

    morphology

    Data interpretation is complex

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    Electron Microscopy at Nano-scale

    Electron micrograph of typical silicon

    nanocomposite cross section showing

    uniform distribution of conductive carbon

    nanotube network. Photo courtesy of U.S.Air Force.

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    Data CollectionAtomic Force Microscope

    Transmission Electron Microscope

    Scanning Electron Microscope

    Imaging materials at the atomic scale -- Nanotechnology

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    Conventional TEM (120kV) HRES TEM (200kV)

    Semiconductor

    insulatormetal

    An example of Nanotechnology:

    Nano-scale imaging of a transistor gate

    insulator

    metal

    Semiconductor

    50 nm scale 5 nm scale

    Data Collection, Analysis and Interpretation

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    Additional References

    Sarid, Dror., Scanning Force Microscopy; Oxford Press

    Williams and Carter, Transmission Electron Microscopy, Plenum Press

    Scanning Electron Microscopy and X-Ray Microanalysis, KluwerAcademic/Plenum publishing

    Kevex Corporation, Energy-Dispersive X-Ray Microanalysis

    Briggs and Seah, Practical Surface Analysis, Wiley

    Wolf and Tauber, Silicon Processing for the VLSI Era, Lattice Press

    Park Scientific Instruments,A Practical Guide to Scanning ProbeMicroscopy


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