What's New in EMC Studio v5 · 2013-04-08 · What is New in EMC Studio v.5.1 7 • Construction of...

What is New in EMC Studio v.5.1

compared to version 5.0

Date: 01.12.2009

EMCoS 27 Pekin Str. 0160, Tbilisi

GEORGIA

Email: [email protected] Phone: ++995-32-389091

Fax: ++995-32-389092 http://www.emcos.com

mailto:[email protected]

http://www.emcos.com/


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Contents

1 New Features and Improvements in v5.1 ............................................................ 5 Appendix A New Features and Improvements in v5.0............................................. 6

A.1 Full Tool Chain with Special Numerical Methods for Automotive Glass Antenna Simulation .....................................................................................................6

A.1.1 Advanced CAD Tools for Glass Antenna Construction.....................................6 A.1.2 Computational Method for Glass Antenna Simulation.....................................7

A.2 Microstrip Patch Antenna Solution ......................................................................9 A.3 Near Field Source Solution .............................................................................. 10 A.4 Low Frequency Smart Entry Antenna Simulation ................................................ 14 A.5 New System Simulation Solutions .................................................................... 15

A.5.1 S-Matrix to Circuit Converter (S2Cir) ........................................................ 15 A.5.2 Modeling of Complex Devices Based on Touchstone Data............................. 17

A.6 New Ideology of EMC Studio Objects and Models................................................ 19 A.7 Models and Devices Library ............................................................................. 21 A.8 Advanced Set of Integrated Models (Antennas, Microstrip Structures, Filters) ......... 22 A.9 CAD Pre Processing of PCB Structures............................................................... 24 A.10 Enriched CAD Functionality............................................................................ 25

A.10.1 New CAD Formats Support – STEP and Parasolid ...................................... 25 A.10.2 Projection of Surface onto another Surface .............................................. 25 A.10.3 New Types of Operations for Complex Surfaces Construction –

Sweeping, Revolving, Lofting, Chamfering and Blending ........................... 26 A.10.4 Multiple Transformations – Iterative Translation, Rotation and Scaling

Operations with Given Multiplicity Value ................................................. 28 A.10.5 New Type of Transformation Operations for Geometry Objects – Scale ........ 29 A.10.6 Distribution of Geometry Objects to Multiple Points ................................... 30 A.10.7 Construction of Curves Based on Surface Edges ....................................... 30 A.10.8 Advanced Selection Tools for Points, Curves, Surfaces and Faces ................ 31 A.10.9 New Types of Splitting and Merging Methods for Curves ............................ 33 A.10.10 Non-Regularized and Regularized Union Operations................................. 35 A.10.11 New Geometry Objects – 3-Point Arc, Elliptical and Rectangular Spiral,

Disk.................................................................................................. 36 A.11 Advanced Features in Near Field 3D Post Processing Tool................................... 37

A.11.1 Handle Near Field Visualization on Different Near Field Areas...................... 37 A.11.2 Near Field Visualization Based on Reference Field Level ............................. 38

A.12 Hybrid Cores New Features and Improvements ................................................ 39 A.12.1 Analytical Calculation of LC Coefficients................................................... 39 A.12.2 Usage of MOR Techniques for MTL Modeling............................................. 40 A.12.3 Support of Cables with Skin-Effect.......................................................... 41 A.12.4 Improved Statistical Analysis – Stochasticity Option for Complex

Bundles............................................................................................. 42 A.12.5 Reference Impedance Definition for S-Parameters Calculation .................... 43 A.12.6 S-Parameters Calculation in Time Domain Tasks....................................... 44 A.12.7 Fast Fourier Transformation................................................................... 44

A.13 New Schematic Elements – Diodes, Transistors, Operational Amplifiers, Filters ..... 45 A.14 New Search Functionality for Devices and Cables.............................................. 46 A.15 ReMesh New Features and Improvements ....................................................... 47

A.15.1 Merge Two Contours............................................................................. 47 A.15.2 New Advanced Remeshing Methods – Manual and Automatic...................... 48 A.15.3 Additional Access to Model Visualization Settings ...................................... 50 A.15.4 Reverse Show of Triangles Properties...................................................... 51

A.16 Improvements v5.0...................................................................................... 52


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1 New Features and Improvements in v5.1

Extension of Green Function approach usage area with PEC and real infinite ground

Improved GUI for Infinite and Finite Dielectric Substrate Definition

• Easy control and visualization of dielectric substrate orientation directly from Properties dialog

• Clear view of dielectric substrate parameters from View Structure

Support of Parallel Cluster Solution for MoM/MTL Hybrid Analysis

• Complete chain of parallel solvers for XTalk, Radiation and Susceptibility analysis

• Control of solver settings from Calculation Task dialog

Multi Shield Support in Hybrid Analysis

GUI support for multi-layered shield definition

Visualization of layered structure and parameters analysis

Convenient diagnostic of non-compatible cables and shields

Extended Support of Touchstone Devices

Possibility to include Touchstone data to MoM/MTL Hybrid Analysis

Improved definition of pin names for Touchstone Device

Easy access to pin properties from Schematic

LF Electric Field Solution for Low Frequency Problems

• New AnalysisType for simulations of Low Frequency problems

• Two types of solutions: Electrostatic, Equivalent Circuit

• Definition of Termination Ports on wire structures

Improved computational cores for Hybrid Analysis

Improved post-processing for AFS and fullwave Time Domain solutions


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Appendix A New Features and Improvements in v5.0

A.1 Full Tool Chain with Special Numerical Methods for Automotive Glass Antenna Simulation

The rapid increase in the number of integrated glass antennas strengthens demands for electromagnetic compatibility (EMC) of such antennas to each other, vehicle wiring, electric equipment and the body of the vehicle itself.

For effective simulation of complex car glass antennas engineers require special tools for full modeling chain. This includes:

• Advanced tools for glass antenna importing from native CAD formats and pre processing of initial data in order to obtain good computational model

• Special computational method for glass antenna analysis

EMC Studio v5.0 offers special functionality for simulation of glass antennas.

A.1.1 Advanced CAD Tools for Glass Antenna Construction

Original antenna model imported from CAD formats often contains elements additional to glass surface and antenna lines (surfaces of glass fixing and adjacent objects). Also due to voluminous structure of glass, model contains very closely situated surfaces. The other problem is that antenna pattern is represented as curves, but realistic pattern is constructed from narrow strips.

EMC Studio v5.0 provides advanced set of CAD tools for pre processing of complex car glass antenna models. Pre processing includes the following general steps:

• Importing of antenna structures from CAD formats (ACIS SAT, IGES, CATIA V4, CATIA V5, STEP and Parasolid)

• Model cleaning. Removal of redundant surfaces and curves

• Reducing of antenna curve number

Original Antenna Model Imported from CAD Format

(contains unnecessary elements additional to glass surface and antenna lines)


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• Construction of antenna pattern by creating strips on curves

• Construction of wide metal parts of antenna

• Projection of antenna pattern to glass surface

• Assignment of physical properties to glass and antenna geometries

• Generation of mesh for computational model

A.1.2 Computational Method for Glass Antenna Simulation

Computational method for glass antenna analysis is based on hybridization of MoM solution for 3D metallic and dielectric objects (car body, wiring) and Green function approach for metallic stripes, printed on multi-layered dielectric substrate with small curvature. Method was validated in laboratory setup and appropriate results for planar glass antenna are shown in the figure.

Application of this method to car is done in cooperation with OEM. Comparison of simulations and measurements shows that EMC Studio v5.0 can achieve high accuracy in this industrial application.

Planar Glass Antenna Simulation:

Antenna Model after Pre Processing

(antenna pattern projected onto glass surface)

Mesh Structure for Simulation

50 100 150 200 250 300-30

-25

-20

-15

-10

-5

0

Frequency [MHz]

S m

agni

tude

[dB

]

MeasurementsGreen Function

What is New in EMC Studio v.5.1 8

Car Glass Antenna Simulation:


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A.2 Microstrip Patch Antenna Solution

Microstrip patch antennas are among the most common antenna types in use today; particularly in the popular frequency range of 1 to 6 GHz. EMC Studio v5.0 provides advanced toolset and computational techniques that enable construction and effective analysis of microstrip antennas. Special Green function approach can be successfully applied for simulation of metallic structures printed on dielectric substrates.

Structure of microstrip patch antennas can vary from the very simple, like rectangular patch, to the complicated antenna arrays consisting of different shaped elements.

Patch Antenna Examples:

UWB Monopole Antenna Simulation:

2 3 4 5 6 7 8 9-35

-30

-25

-20

-15

-10

-5

0

Frequency [GHz]

S11

[dB

]

Measurement [1]Simulation

[1] Quality Assessment of Computational Techniques and Software Tools for Planar-Antenna Analysis Vasylchenko, A.; Schols, Y.; De Raedt, W.; Vandenbosch, G.A.E. Antennas and Propagation Magazine, IEEE Volume 51, Issue 1, Date: Feb. 2009, Pages: 23-38


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A.3 Near Field Source Solution

For simulations of complex systems it is difficult to model simultaneously different types of objects. For example, modeling of metallic part of car body can be efficiently done using Method of Moments; however simulations of complex devices may require circuit analysis and/or separate analysis of radiation from PCB or its housing.

To model complete system some kind of hybridization of different methods can be provided. One of the possibilities of such hybridization is to simulate or measure field distribution in close vicinity to the component of system (ECU, micro-chip etc.) and introduce this field data to the model of rest part as sources.

EMC Studio v5.0 supports new type of external excitations for investigation of complex source radiation – Near Field Source. This equivalent source provides possibility to include simulated or measured radiation from the components into corresponding simulation model in EMC Studio.

Note: In order to define near field source from external formats (data obtained from measurements or simulated by third party EM software) special converters are required to be written for data processing.


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Basic Principles of Near Field Source Solution:

• Near field source solution is based on field equivalence principle

• The field equivalence principle states that original sources J and M which produce E and H fields, picture (a), can be replaced by equivalent sources

• The imaginary closed surface S surrounding original sources is defined

• The fields outside an imaginary surface are produced by equivalent electric and magnetic-currents on surface S, picture (b)

• The current densities are selected so that the fields inside the closed surface S containing sources are assumed to be zero and outside they are equal to radiation produced by the original sources

(a) Actual Problem (b) Equivalent Principle

REFERENCES: Balanis, Constantine A. - Antenna Theory, Analysis and Design (2nd Ed) [John Willey 1997], pp. 575-579.

Note: During modeling of near field source the following limitation should be considered:

• Near field source cannot intersect geometry objects

• Topology elements and sources cannot be located inside near field source area

• To provide the proper power relations, triangles should be oriented such to provide the positive normal in the direction of energy flow. Thus, for close surface enveloping the sources, triangle normals should be oriented outward the surface

• In order to get correct results for near field source it is necessary to have full information about simulated or measured E and H fields (X, Y, Z real and image components, phase). In case when some field components are missing in near field source data then incomplete information may be insufficient for accurate calculations


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Near Field Source Modeling Techniques:

Required information for Near Field Source definition is electromagnetic fields produced by ECU on surrounding closed surface.

Step 1: To calculate magnetic and electric fields produced by ECU (required for near field source definition) the ECU need to be surrounded by closed near field area.

Note: Field observation area must be closed and all triangles should be oriented in one direction for correct power balance

Step 2: During simulation E and H fields calculated in the triangles centers of the defined near field area are written to the *.dat file that can be used as input file for near field source definition. In order to extract and export calculated fields in *.dat file mark Export field distribution check box in Near Field Area Properties dialog.


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Step 3: Calculated E and H fields produced by ECU (written in *.dat file) can be used for Near Field Source definition in new project.

Note: Near Field Source is automatically located in the same position where field data were obtained. Source must be manually located in required position.

Near Field Source


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A.4 Low Frequency Smart Entry Antenna Simulation

Smart Entry System is one of most popular safety systems. Smart Entry allows driver to open the door and activate some electrical systems while being outside the vehicle. Also Smart Entry System allows driver to be identified by the car electronics and start the engine without mechanical key.

System consists of several antennas transmitting signals one to another: antennas fixed on the car body and antenna in the driver 'remote key'. Parts of antennas are oriented to out-vehicle zone, and another part is oriented to the operation inside vehicle. Operation of the system is usually realized on two defined frequencies: low frequency 125 kHz for radiating mode, radio frequency (433 MHz or 315 MHz) for receiving mode. For the low frequency coil antenna wounded around ferrite is used. This antenna does not provide high radiated power due to low efficiency. Thus determination of areas where radiated field level outside car is enough to be recognized by receiver is very important. Vice versa, areas inside car where field level is too low should be eliminated.

Simulations of low frequency coil antennas with ferrite rod, used for Smart Entry System, can be effectively done in EMC Studio v5.0. Also EMC Studio provides convenient post processing tool for easy analysis of zones with high and low radiated field levels.

20-turn coil antenna wounded around rectangular

ferrite rod

Area characterized with magnetic field level above

the receiver sensitivity limit


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A.5 New System Simulation Solutions

A.5.1 S-Matrix to Circuit Converter (S2Cir)

Electronic systems are usually quite complex. For modeling of each part of the system different numerical approaches can be effectively used. However, simulation of complete system is much more complicated.

Lot of components can be considered separately and represented as scattering parameters matrixes, which describe signal transmission between defined points and input characteristics of each termination.

After separate solution of each component construction of original system is required. One of the possible methods is representation of S-parameters as equivalent circuit with further calculation using circuit analysis tools.

EMC Studio v5.0 provides S2Cir Converter based on Vector Fitting Technique that allows construction of equivalent circuit corresponding to touchstone data.

Vector Fitting Technique:

Rational frequency dependent function can be represented as polynomial:

Where, an (poles) and cn (residues) are either real quantities or come in complex conjugate pairs d and h are real values.

Touchstone Data

Simulation Results

Analytical Solution

Measurement Data

(Antennas, Electronic

Equipment, Mechanical

Equipment)

S2Cir Converter

(from Touchstone data to

Equivalent circuit)

System Simulation Calculation

PSpice

VHDL - AMS

Spice3

∑=

⋅++−

≈N

n n

n hsdas

csf1

)(

frequencyis ⋅⋅⋅= π2


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For impedance function obtained polynomial can be used for circuit construction. Equivalent circuit consists of N branches, where N is polynomial order.

REFERENCE: B. Gustavsen, "Computer code for rational approximation of frequency dependent admittance matrices", IEEE Trans. Power Delivery, vol.17, no.4, pp. 1093-1098, Oct. 2002

Note: S2Cir converter requires special license to be obtained.

Branch for real values of an and cn

Branch for complex conjugate pair of an

and cn


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A.5.2 Modeling of Complex Devices Based on Touchstone Data

Complex devices can be effectively introduced to system simulation or hybrid calculation as measured or simulated scattering matrix.

In order to introduce measured or calculated S-parameters to system simulation model EMC Studio v5.0 provides new type of device – Touchstone Device.

Complex Devices Based on Touchstone Data Modeling Techniques:

Step 1: At the first stage measurements or simulations are performed in order to obtain S-parameters of the required component:

T-shape Balun in

EM Analysis Type

Calculated or Measured S-Parameters


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Step 2: Touchstone file containing information on component S-matrix is introduced to circuit simulation:

Step 3: S2Cir converter is used to obtain equivalent circuit from Touchstone device data. Validation of obtained equivalent circuit based on S2Cir converter parameters may be performed from Network Parameters dialog.

Polynomial order is increased starting from Initial order until difference between initial and reconstructed data is greater than user-defined Error or Maximum order is not reached.

Port 2

Port 3

Port 1

Touchstone Device is used to introduce calculated S-parameters to System Simulation model


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A.6 New Ideology of EMC Studio Objects and Models

EMC Studio v5.0 provides new ideology of EMC objects and models.

With new ideology EMC Studio project may be divided into several independent components (groups) called "objects" that may contain different parts of the whole simulation model.

Multi objects ideology provides possibility to export whole project or its part to external *.emm (EMC Model) files and then import these files into other simulation projects.

EMC Studio object contains all information related to the elements defined in current object – geometry, model and mesh elements (topology, loads and sources, observation quantities, external excitations, etc.) and corresponding parameters. Elements may be defined parametrically by using variables.

Object may contain extra information associated with it. This includes:


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• Preview Image of the Object (in *.bmp file format)

• Icon (in *.bmp file format)

• Application Note or Object Description (in *.pdf file format)

If elements associated with object are defined based on variables then these variables are considered as object parameters and stored together with object. Each object parameter has the following attributes:

• Name - unique name of the parameter defined during variables specification

• Variable - reference to the variable name

• Value – parameter value that may be represented by any expression or numerical value

Elements Image Icon Notes Parameters

EMC Object

Geometry Elements

Model Elements

Mesh Elements

Name

Variable

Value


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A.7 Models and Devices Library

Models Library available in EMC Studio v5.0 allows to prepare parametrically defined basic components of the system for further import to the complete simulation task. Introduced objects can be easily customized based on previously defined parameters.

To activate Models Library select View>Models Library from Main Menu or click

Models Library button on Standard Toolbar.

Layout of Models Library is separated into two parts:

• Library Tree – displays library folders organized in tree structure.

• Preview Frame – displays contents (folder structure or models preview images) of the folder currently selected in Library Tree. If no folders are selected the contents of the root directory is visualized.

Note: Models defined in Models Library are saved in the library folder (root directory) as *.emm files: <EMC Studio install folder>\Libraries\Models Library\>.

Models Library Toolbar

Library Tree

Preview Frame


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A.8 Advanced Set of Integrated Models (Antennas, Microstrip Structures, Filters)

EMC Studio v5.0 provides advanced set of simulation ready models integrated in Models Library:

• Coil Antennas

Circular Coil (Odd and Even)

Elliptical Coil (Odd and Even)

Rectangular Coil (Odd and Even)

• Conical Antennas

Biconical

Discone

• Glass Antennas

Grid Antennas (10 and 5 lines)

Two Monopoles

• Horn Antennas

Conical Horn

Pyramidal Horn

• Patch Antennas

Antipodal Vivaldi

Line-fed Patch

Rectangular Patch

UWB Monopole

• Wire Antennas

50-Ohm and 75-Ohm F-inverted

Five-wavelength Dipole

Folded Dipole

Half-wavelength Dipole

Helix Antenna

Log-Periodic Dipole Array (LDPA) (14 and 28 dipoles)

Square Loop Antenna

V Antenna

Yagi-Uda Antenna


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• Reflector Antennas

Corner Reflector

Parabolic Reflector

• Microstrip Structures

3-dB Power Divider

LC Balun

• TEM Devices

Stripline (Mesh and Wire Model)

TEM Cell

• Filters

Series and Parallel Band Pass Filters

Series and Parallel Band Reject Filters

High Pass and Low Pass RLC Filters

P Form Filters

T Form Filters


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A.9 CAD Pre Processing of PCB Structures

EMC Studio v5.0 provides advanced set of CAD tools for PCB data pre processing. PCB structures pre processing includes the following general steps:

• Importing of PCB structures from CAD formats (ACIS SAT, IGES, CATIA V4, CATIA V5, STEP and Parasolid)

• Model cleaning. Removal of unnecessary parts

• Flattening of traces and board surfaces

• Filling of holes (when necessary)

• Converting vias to lines

• Generation of mesh for computational model

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A.10 Enriched CAD Functionality

A.10.1 New CAD Formats Support – STEP and Parasolid

EMC Studio v5.0 supports geometry import from STEP (*.stp, *.step) and Parasolid (*.x_t, *.x_b) file formats.

Note: CATIA, IGES, STEP and Parasolid converters require special license to be obtained.

A.10.2 Projection of Surface onto another Surface

EMC Studio v5.0 provides new Projection functionality that allows to project one surface onto another surface. Projected edges are imprinted on the target body. Resulting surface contains projected and imprinted edges.

Target Surface

(antenna glass)

Projected Surface

(antenna traces represented as thin strips)

Resulting Surface

(glass with imprinted traces)


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A.10.3 New Types of Operations for Complex Surfaces Construction – Sweeping, Revolving, Lofting, Chamfering and Blending

EMC Studio v5.0 provides new types of operations for complex models construction: sweeping, revolving, lofting, chamfering and blending.

Sweeping:

Sweep operation allows to create complex open or closed (solid) surfaces based on curves. Sweep surfaces are constructed by sweeping curves profile along the path. Profile and path curves may either be open or closed. If the profile curve is closed, then resulting surface will be solid.

Revolving:

Revolve operation allows you to create complex open or closed (solid) surfaces based on curves revolution. Revolved surfaces are constructed by rotating curves profile about the axis. If the profile curve is closed, then resulting surface will be solid.

Profile Curve

Path Curve

Sweep Surface

Revolved Surface

Profile Curve

Axis


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Lofting:

Loft operation allows you to create complex open or closed (solid) smooth surface by connecting two or more curves (profiles) located in one or different planes. If the profile curves are closed, then resulting surface will be solid.

Chamfering:

Chamfer operation allows you to bevel the edges of the surfaces. Chamfer command is defined by the "Range" value. The "Range" value is the distance between the original edge and the edges created by the chamfer operation.

Blending:

Blend operation allows you to round the edges of the surfaces. Blend command is defined by the "Radius" value.

Loft Surface Profile Curves


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A.10.4 Multiple Transformations – Iterative Translation, Rotation and Scaling Operations with Given Multiplicity Value

EMC Studio v5.0 provides new iterative transformation operations: iterative translation, rotation and scaling operations with given multiplicity value.

Multiple Translate:

Multiple Translate function allows to translate and copy geometry objects multiple times in one operation.

Multiple Rotate:

Multiple Rotate allows to rotate and copy geometry objects multiple times in one operation.


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Multiple Scale:

Multiple Scale allows to scale and copy geometry objects multiple times in one operation.

A.10.5 New Type of Transformation Operations for Geometry Objects – Scale

EMC Studio v5.0 provides new transformation operation for geometry objects – Scale. Scale function allows to change objects dimensions by defining scale factor (without changing objects proportions). Scale factor greater than 1 enlarges the object. Scale factor less than 1 shrinks the object.


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A.10.6 Distribution of Geometry Objects to Multiple Points

New Distribute to Points functionality in EMC Studio v5.0 allows to distribute copies of the selected geometry objects by defined distribution points.

A.10.7 Construction of Curves Based on Surface Edges

New Convert Edges to Curves functionality in EMC Studio v5.0 allows to create new curves objects based on surface edges. This functionality is very convenient for filling of small holes in complex PCB structures:

Convert Edges to Curves

Filling of Holes by Creating Boundary Surfaces Based on Curves


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A.10.8 Advanced Selection Tools for Points, Curves, Surfaces and Faces

EMC Studio v5.0 provides advanced selection tools for comfortable manipulation with geometry objects (points, curves, surfaces and faces).

Invert Selection:

Invert Selection functionality can be applied for points, curves, surfaces and faces:

Advanced Selection:

Advanced Selection functionality is intended to help user to operate with complex CAD models containing a lot of curves and surfaces. In such cases it may be convenient to select required surfaces or curves simultaneously by choosing them from Advanced Selection dialog.


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Select Continually Connected Curves:

Select Continually Connected Curves functionality allows to select all continually connected curves in one operation.

This operation can be applied also to curves without common points on terminations.

Note: Select continually connected curves operation can be applied to curves with gaps only if gap between them is less than Tolerance value defined in Options> Geometry dialog.


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A.10.9 New Types of Splitting and Merging Methods for Curves

EMC Studio v5.0 provides new types of splitting and merging methods for comfortable operation with curves.

Split Curves in Intersection Points:

Split Curves in Intersection Points operation allows splitting curves in intersection points into several independent curves.

This operation can be applied also for curves located in different planes.

Note: Split curves in intersection points operation can be applied to curves located in different planes only if distance between them is less than Tolerance value defined in Options>Geometry dialog.


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Join End Points of the Curves:

Join End Points operation allows to join two or several curves together. Resulting topology depends on curves selection order.


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A.10.10 Non-Regularized and Regularized Union Operations

Current version of EMC Studio supports two types of Union operations – Regularized and Non-Regularized. In case of non-regularized union operation resulting surface may have faces and edges not needed to support the topology. These are not removed before returning the resulting surface. In case of regularized union these surfaces are removed.

Union (non-regularized) operation applied to the boxes. Resulting surface contains intermediary faces and edges inherited from the ancestor surfaces.

Regularized Union operation applied to the boxes. Resulting surface doesn’t contain intermediary faces and edges.


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A.10.11 New Geometry Objects – 3-Point Arc, Elliptical and Rectangular Spiral, Disk

EMC Studio v5.0 supports new geometry objects:

3-Point Arc – is defined by three parameters: start point, end point and middle point.

Elliptical Spiral – is defined by the following parameters: center, major and minor radiuses, height, number of turns and rotation direction.

Rectangular Spiral – is defined by the following parameters: center, length, width, height, number of turns and rotation direction.

Disk – is defined by two parameters: center point and radius.

Multilayered elliptical and rectangular spirals can be easily constructed in current version by defining number of layers and distance between layers.

Elliptical Spiral with

Two Layers


Fourth Layers


Three Layers


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A.11 Advanced Features in Near Field 3D Post Processing Tool

A.11.1 Handle Near Field Visualization on Different Near Field Areas

Near Field post processing tool provides possibility to handle fields distribution on different near field areas. Depending on chosen near field areas field distribution are recalculated (min. and max. values) and visualized only on active areas.

All Near Fields Areas Defined in Project is Active

Only One Near Fields Area is Active


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A.11.2 Near Field Visualization Based on Reference Field Level

Near Field post processing tool provides convenient way for easy analysis of zones with high and low field levels. Depending on the problem areas with field level above or below reference level can be highlighted. For this purpose:

1. Activate Near Field Distribution dialog and switch to Level tab

2. Switch on Define reference level check box

3. Define required level in Reference level field

4. Choose one of the available options:

• Highlight Areas Above Reference Level:

In this case areas where field level is above defined reference level will be coloured with red and areas where field level is below reference level will be coloured with blue

• Highlight Areas Below Reference Level:

In this case areas where field level is below defined reference level will be coloured with red and areas where field level is above reference level will be coloured with blue


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A.12 Hybrid Cores New Features and Improvements

A.12.1 Analytical Calculation of LC Coefficients

Analytical calculation of L and C coefficients is supported for single, twisted and coaxial cables. This new option allows significantly decrease calculation time for problems with large number of cables.

0 50 100 150 2000

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16FullMASAnalytic

Comparison of calculation time for different types of solver is shown below:

Static2D Calculation Time

[sec] Total Calculation Time

[sec]

FullMAS option 26.20 33.34

Analytic option 1.67 8.78

To activate this option in Calculation Task > Advanced Settings dialog choose Analytic item from Type combo box in 2D Solver group:


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A.12.2 Usage of MOR Techniques for MTL Modeling

For frequency dependent problems (solid shields, braided shields, skin-effect and tangential losses) Hybrid Cores provide new option Construction of Equivalent Circuit that allows to reduce calculation time and calculate these types of problems in time domain.

Note: To activate this option in Calculation Task > Advanced Settings dialog switch on Construction of equivalent circuit check box. By default this option is switched on.

Equivalent Circuit Construction for Transfer Impedance and Admittance:

Equivalent circuit for transfer impedance and admittance is constructed by using S2Cir Converter (converter of Z or S or Y matrix of arbitrary linear N-port network to equivalent circuit).

Equivalent Circuit Construction for Skin Effect:

Equivalent circuit for skin effect is constructed by parallel combination of impedance branches, where each branch have a resistance and inductance in series:

Dielectric Foil

Braid Sheath


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Equivalent Circuit Construction for Tangential Losses:

Equivalent circuit of loss tangent is constructed by using continued fraction expansion (CFE). A network representation can be given as:

Comparisons of calculation time for different types of equivalent circuit are shown in the table below:

Case Frequency Dependent Equivalent Circuit

Skin-effect 36.37 [min] 4.15 [min]

Tangential losses 17.47 [min] 4.04 [min]

Shielded cables 65.97 [h] 2.16 [h]

A.12.3 Support of Cables with Skin-Effect

New versions of Hybrid Cores support skin effect consideration for all type of cables.

0 200 400 600 800 10002

3

4

5

6

7

8

9

10

Frequency [MHz]

Cur

rent

[mA

]

Without skin effectWith skin effect

For time domain calculation equivalent circuit is used.

Note: To allows skin-effect consideration in hybrid calculations in Calculation Task > Advanced Settings dialog switch on Use Skin Effect check box.


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A.12.4 Improved Statistical Analysis – Stochasticity Option for Complex Bundles

New versions of Hybrid Cores provide improved statistical analysis for complex geometries and bundles:

50 100 150 200 250 300-6

-5

-4

-3

-2

-1

Frequency [MHz]

S11

[dB

]

MeasurementSimulation


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A.12.5 Reference Impedance Definition for S-Parameters Calculation

In new version of XTalk Core S-parameters calculation can be performed with user defined value of ports reference impedance. Required value of port reference impedance can be defined from Calculation Task > Advanced Settings dialog in Z-reference Value control. By default this value is set to 50 Ohm.

Note: Default value of Z-reference can be changed from Options > Mesh Mode > Circuit dialog.

Port P1-1

Port P1-2 S21 between P10 and P3


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A.12.6 S-Parameters Calculation in Time Domain Tasks

New versions of Hybrid Cores provide possibility to calculate S-parameters for time domain calculation. S-parameters in TD are calculated by using the following scheme:

A.12.7 Fast Fourier Transformation

New version of XTalk Core supports Fast Fourier Transformations and inverse Fast Fourier Transformations for periodic and non-periodic signals.

To use FFT option in Calculation Task > Advanced Settings dialog switch to Time Domain Settings tab and switch on Use FFT check box:

Note: FFT can be performed by XTalk core and by internal Spice functions.

Cycle for each port

Switch current port to active and others to passive

Perform Spice calculation

Perform Fast Fourier Transformation

Calculation of S-parameters

• Reference impedance Z0 is definedfrom calculation settings

• Active port is changed on PWL

voltage source that is Gauss signaland resistor Z0 in serial

• Passive port is changed on resistor

Z0


45

A.13 New Schematic Elements – Diodes, Transistors, Operational Amplifiers, Filters

EMC Studio v5.0 provides new integrated simulation ready circuit elements in Schematic Library:

• Thyristor

• Darlington Transistors NPN/PNP

• Zener Diode

• TVS Diode

• Tunnel Diode

• Varicap Diode

• Operational Amplifier - BUF600X2_BB

• Operational Amplifier - EL2001_EL

• Low/High Pass LC Filter

• Low/High Pass CL Filter

• Low/High Pass RC Filter

• Low/High Pass Pi Filter

• Low/High Pass T Filter

• Series Band Pass Filter

• Parallel Band Pass Filter

• Series Band Reject Filter

• Parallel Band Reject Filter

0 5 10 15 20 25 30-0.04

-0.03

-0.02

-0.01

0

0.01

0.02

0.03

0.04

Time [ns]

Cur

rent

[A]


46

A.14 New Search Functionality for Devices and Cables

In cases when imported harness database contains a lots of devices and cables it may be very difficult to find and locate required element in Elements Tree View or Viewer 3D. EMC Studio v5.0 provides new search capability for devices and cables by name.


47

A.15 ReMesh New Features and Improvements

A.15.1 Merge Two Contours

ReMesh v5.0.01 provides new Merge Two Contours functionality that allows to merge two contours by stretching triangle edges of the second contour and thus connecting them to triangle edges of the first contour.

Contour 2

Contour 1


48

A.15.2 New Advanced Remeshing Methods – Manual and Automatic

ReMesh v5.0.01 provides new advanced remeshing methods – Automatic and Manual.

Manual Advanced Remeshing:

Manual advanced remeshing method allows to define angles between triangle normals according to which the geometry will be divided into separate areas for further remeshing procedure. Two options are available:

• Angle for All Geometry – maximal angle between normals of all triangles in geometry

• Angle for Neighbors – maximal angle between normals of neighbor triangles

Automatic Advanced Remeshing:

This function automatically remeshes geometry with three different methods corresponding to areas detected by following angle-assignment:

Method 1 Method 2 Method 3

Angle for all geometry: 90 o Angle for all geometry: 90 o Angle for all

geometry:

120 o

Angle for neighbors: 25 o Angle for neighbors: 15 o Angle for neighbors: 40 o

After completing remesh process, the program displays dialog with three methods based on detected areas. Selecting each method will show preview of the new mesh by given method.


49

Geometry before Manual Advanced Remeshing

Visualization of areas by different colors after angles assignment

Geometry after Manual Advanced Remeshing


50

A.15.3 Additional Access to Model Visualization Settings

ReMesh v5.0.01 provides additional access to model visualization settings and command items directly from 3D Viewer environment:

Elements Command Items:

Hide

• Property

• Element

Delete

• Property

• Element

Model Visualization Settings:

Show/Hide

• Nodes, Nodes ID

• Elements, Elements ID

• Elements Property ID

• Rods Nodes, Rods Nodes ID

• Rods, Rods ID

• IGES

• Free Edges

Show All Elements

Reverse Show

View Options

• Wireframe

• Hidden

• Solid

• Transparent Solid

• Light

• Shrink

• Orientation

• Smooth View

• Smooth View by Property

• Property Colors

• Elements Quality

Show Imported Colors

What is New in EMC Studio v.5.1 51

A.15.4 Reverse Show of Triangles Properties

New functionality Reverse Show of Triangles Properties in ReMesh v5.0.01 allows to control visualization of hidden properties or elements directly from 3D Viewer window.

Car model visualized with all triangles shown by properties colors

Car model visualized with hidden triangles by properties

Reverse show – hidden triangles became visible


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A.16 Improvements v5.0

• Unification of XTalk, Radiation and Susceptibility Analysis Types

• Support of Geometry and Model Modes in Hybrid and Static3D Analysis Types

EMC Studio v5.0 supports advanced pre-processing based on Geometry>Model>Mesh Modes ideology for Hybrid and Static3D Analysis Types.

• Improvements in Cables Library – convenient coaxial cable parameters definition

• Reorganized Shields Library dialog

• Improvements in nets names generation for shielded multi cables

• Support of Multi Excitation solution type in SHybrid core

• Support of Adaptive Frequency Sampling (AFS) calculation in SHybrid core

• Improvements in strip construction – strip generation based on Working Plane and Target Surface normals

• Highlighting of hidden objects items in Geometry Mode Tree View

• New Nodes Creation Method Based on Vertices

• Redesigned Calculation Task dialog for TriD Parallel settings definition

• Improvements in Low Frequency Analysis for Dielectrics with Magnetic Properties

• New Model Diagnostic Functions – Identical Potential IDs for Wires Segments and Meshes in Static3D Analysis Type

• Post Processing Improvements – redesigned Outputs dialog provides information about output file size, creation date and full path to the selected outputs

• Post Processing Improvements – Explore Output(s) Folders button

• Post Processing Improvements – Support of source load subtraction for Impedance, Admittance, VSWR and S11 parameters

• Post Processing Improvements – Smith chart support for Impedance, Admittance, S11 and S21 parameters

• Customizable Shortcuts

Date post:	13-Jul-2020
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What's New in EMC Studio v5 · 2013-04-08 · What is New in EMC Studio v.5.1 7 • Construction of...

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