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Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

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1 2 3 4 8 7 6 5 V IN- V IN+ V OCM V S+ V OUT+ PD V S- V OUT- THS4502 THS4503 www.ti.com SLOS352E APRIL 2002 REVISED OCTOBER 2011 Wideband, Low-Distortion Fully Differential Amplifiers Check for Samples: THS4502, THS4503 1FEATURES DESCRIPTION The THS4502 and THS4503 are high-performance 2Fully Differential Architecture fully differential amplifiers from Texas Instruments. Bandwidth: 370 MHz The THS4502, featuring power-down capability, and Slew Rate: 2800 V/µs the THS4503, without power-down capability, set new performance standards for fully differential amplifiers IMD 3 : -95 dBc at 30 MHz with unsurpassed linearity, supporting 14-bit OIP 3 : 51 dBm at 30 MHz operation through 40 MHz. Package options include Output Common-Mode Control the 8-pin SOIC and the 8-pin MSOP with PowerPADfor a smaller footprint, enhanced ac Wide Power Supply Voltage Range: 5 V, ±5 V, performance, and improved thermal dissipation 12 V, 15 V capability. Centered Input Common-Mode Range Power-Down Capability (THS4502) Evaluation Module Available APPLICATIONS High Linearity Analog-to-Digital Converter Preamplifier Wireless Communication Receiver Chains RELATED DEVICES Single-Ended to Differential Conversion DEVICE (1) DESCRIPTION Differential Line Driver THS4500/1 370 MHz, 2800 V/µs, V ICR Includes V SActive Filtering of Differential Signals THS4502/3 370 MHz, 2800 V/µs, Centered V ICR THS4120/1 3.3 V, 100 MHz, 43 V/µs, 3.7 nVHz THS4130/1 ±15 V, 150 MHz, 51 V/µs, 1.3 nVHz THS4140/1 ±15 V, 160 MHz, 450 V/µs, 6.5 nVHz THS4150/1 ±15 V, 150 MHz, 650 V/µs, 7.6 nVHz (1) Even numbered devices feature power-down capability. WARNING The THS4502 and THS4503 may have low-level oscillation when the die temperature (also known as the junction temperature) exceeds +60°C. These devices are not recommended for new designs where the die temperature is expected to exceed +60°C. For more information, see Maximum Die Temperature to Prevent Oscillation section. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2PowerPAD is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 20022011, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Transcript
Page 1: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

1

2

3

4

8

7

6

5

VIN- VIN+

VOCM

VS+

VOUT+

PD

VS-

VOUT-

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

Wideband, Low-Distortion Fully Differential AmplifiersCheck for Samples: THS4502, THS4503

1FEATURES DESCRIPTIONThe THS4502 and THS4503 are high-performance

2• Fully Differential Architecturefully differential amplifiers from Texas Instruments.• Bandwidth: 370 MHz The THS4502, featuring power-down capability, and

• Slew Rate: 2800 V/µs the THS4503, without power-down capability, set newperformance standards for fully differential amplifiers• IMD3: -95 dBc at 30 MHzwith unsurpassed linearity, supporting 14-bit• OIP3: 51 dBm at 30 MHz operation through 40 MHz. Package options include

• Output Common-Mode Control the 8-pin SOIC and the 8-pin MSOP withPowerPAD™ for a smaller footprint, enhanced ac• Wide Power Supply Voltage Range: 5 V, ±5 V,performance, and improved thermal dissipation12 V, 15 Vcapability.• Centered Input Common-Mode Range

• Power-Down Capability (THS4502)• Evaluation Module Available

APPLICATIONS• High Linearity Analog-to-Digital Converter

Preamplifier• Wireless Communication Receiver Chains

RELATED DEVICES• Single-Ended to Differential ConversionDEVICE (1) DESCRIPTION• Differential Line DriverTHS4500/1 370 MHz, 2800 V/µs, VICR Includes VS–• Active Filtering of Differential SignalsTHS4502/3 370 MHz, 2800 V/µs, Centered VICR

THS4120/1 3.3 V, 100 MHz, 43 V/µs, 3.7 nV√Hz

THS4130/1 ±15 V, 150 MHz, 51 V/µs, 1.3 nV√Hz

THS4140/1 ±15 V, 160 MHz, 450 V/µs, 6.5 nV√Hz

THS4150/1 ±15 V, 150 MHz, 650 V/µs, 7.6 nV√Hz

(1) Even numbered devices feature power-down capability.

WARNING

The THS4502 and THS4503 may have low-level oscillation when the dietemperature (also known as the junction temperature) exceeds +60°C. Thesedevices are not recommended for new designs where the die temperature isexpected to exceed +60°C. For more information, see Maximum Die Temperatureto Prevent Oscillation section.

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2PowerPAD is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date. Copyright © 2002–2011, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.

Page 2: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

APPLICATION CIRCUIT DIAGRAM

f - Frequency - MHz

-80

-92

0 20 40 60

- T

hir

d-O

rder

Inte

rmo

du

lati

on

Dis

tort

ion

- d

Bc

-74

THIRD-ORDER INTERMODULATIONDISTORTION

-62

80 100

-68

-86

-98

12

10

14

16

IMD

3

Bit

s

VS

392 Ω

+

-

-

+800 Ω

5 V

-5 V

VOUT

392 Ω

402 Ω

56.2 Ω

50 Ω 374 Ω

VOCM2.5 V

-

+ -

+VOCM 14 Bit/80 MSps

IN

IN

5 V

Vref

5 V

-5 V

VS

0.1 µF 10 µF

0.1 µF 10 µF

THS4502

392 Ω

10 pF

1 µF

56.2 ΩADC

374 Ω50 Ω

402 Ω

392 Ω

10 pF

24.9 Ω

24.9 Ω

THS4503(TOP VIEW)

VIN- 1

2

3

4

8

7

6

5

VOCM

VS+

VOUT+

VIN+

VS-

VOUT-

PD

D, DGN, DGKTHS4502(TOP VIEW)

D, DGN, DGK

VIN- 1

2

3

4

8

7

6

5

VOCM

VS+

VOUT+

VIN+

VS-

VOUT-

NC

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled withappropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be moresusceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE/ORDERING INFORMATIONORDERABLE PACKAGE AND NUMBER

PLASTIC MSOP (1)TEMPERATURE PLASTIC SMALL OUTLINE PLASTIC MSOPPowerPAD

(D) (DGN) SYMBOL (DGK) SYMBOL

THS4502CD THS4502CDGN BCG THS4502CDGK ATX0°C to 70°C

THS4503CD THS4503CDGN BCK THS4503CDGK ATY

THS4502ID THS4502IDGN BCI THS4502IDGK ASX-40°C to 85°C

THS4503ID THS4503IDGN BCL THS4503IDGK ASY

(1) All packages are available taped and reeled. The R suffix standard quatity is 2500. The T suffix standard quantity is 250 (e.g.,THS4502DT).

PIN ASSIGNMENTS

2 Submit Documentation Feedback Copyright © 2002–2011, Texas Instruments Incorporated

Product Folder Link(s): THS4502 THS4503

Page 3: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

ABSOLUTE MAXIMUM RATINGSover operating free-air temperature range unless otherwise noted (1)

UNIT

Supply voltage, VS 16.5 V

Input voltage, VI ±VS

Output current, IO (2) 150 mA

Differential input voltage, VID 4 V

Continuous power dissipation See Dissipation Rating Table

Maximum junction temperature, TJ(3) 150°C

Maximum junction temperature, continuous operation, long term reliability, TJ(4) 125°C

Maximum junction temperature to prevent oscillation, TJ(5) 60°C

C suffix 0°C to 70°COperating free-air temperature range, TA

I suffix -40°C to 85°CStorage temperature range, Tstg -65°C to 150°C

(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods maydegrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyondthose specified is not implied.

(2) The THS450x may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermallydissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which couldpermanently damage the device. See TI technical brief SLMA002 for more information about utilizing the PowerPAD thermally enhancedpackage.

(3) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.(4) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may

result in reduced reliability and/or lifetime of the device.(5) See Maximum Die Temperature to Prevent Oscillation section in the Application Information of this data sheet.

PACKAGE DISSIPATION RATINGSθJC θJA

(1)PACKAGE (°C/W) (°C/W)

D (8 pin) 38.3 97.5

DGN (8 pin) 4.7 58.4

DGK (8 pin) 54.2 260

(1) This data was taken using the JEDEC standard High-K test PCB.

RECOMMENDED OPERATING CONDITIONSMIN NOM MAX UNIT

Dual supply ±5 ±7.5Supply voltage V

Single supply 4.5 5 15

C suffix 0 70Operating free- air temperature, TA °C

I suffix -40 85

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 3

Product Folder Link(s): THS4502 THS4503

Page 4: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

ELECTRICAL CHARACTERISTICS VS = ±5 VRf = Rg = 499Ω , RL = 800 Ω, G = +1, Single-ended input unless otherwise noted.

THS4502 AND THS4503

TYP OVER TEMPERATURE (1)MIN/PARAMETER TEST CONDITIONSTYP/0°C to -40°C to25°C 25°C UNITS MAX70°C 85°C

AC PERFORMANCE

G = +1, PIN = -20 dBm, Rf = 392 Ω 370 MHz Typ

G = +2, PIN = -30 dBm, Rf = 1 kΩ 175 MHz TypSmall-signal bandwidth

G = +5, PIN = -30 dBm, Rf = 1.3 kΩ 70 MHz Typ

G = +10, PIN = -30 dBm, Rf = 1.3 kΩ 30 MHz Typ

Gain-bandwidth product G > +10 300 MHz Typ

Bandwidth for 0.1 dB flatness PIN = -20 dBm 150 MHz Typ

Large-signal bandwidth VP = 2 V 220 MHz Typ

Slew rate 4 VPP Step 2800 V/µs Typ

Rise time 2 VPP Step 0.8 ns Typ

Fall time 2 VPP Step 0.6 ns Typ

Settling time to 0.01% VO = 4 VPP 8.3 ns Typ

Settling time to 0.1% VO = 4 VPP 6.3 ns Typ

Harmonic distortion G = +1, VO = 2 VPP Typ

f = 8 MHz -83 dBc Typ2nd harmonic

f = 30 MHz -74 dBc Typ

f = 8 MHz -97 dBc Typ3rd harmonic

f = 30 MHz -78 dBc Typ

Third-order intermodulation VO = 2VPP, fc= 30 MHz, Rf = 392 Ω, -94 dBc Typdistortion 200 kHz tone spacing

fc = 30 MHz, Rf = 392 Ω,Third-order output intercept point 52 dBm TypReferenced to 50 ΩInput voltage noise f > 1 MHz 6.8 nV/√Hz Typ

Input current noise f > 100 kHz 1.7 pA/√Hz Typ

Overdrive recovery time Overdrive = 5.5 V 75 ns Typ

DC PERFORMANCE

Open-loop voltage gain 55 52 50 50 dB Min

Input offset voltage -1 -4/+2 -5/+3 -6/+4 mV Max

Average offset voltage drift ±10 ±10 µV/°C Typ

Input bias current 4 4.6 5 5.2 µA Max

Average bias current drift ±10 ±10 nA/°C Typ

Input offset current 0.5 1 2 2 µA Max

Average offset current drift ±40 ±40 nA/°C Typ

INPUT

Common-mode input range ±4.0 ±3.7 ±3.4 ±3.4 V Min

Common-mode rejection ratio 80 74 70 70 dB Min

Input impedance 107 || 1 Ω || pF Typ

OUTPUT

Differential output voltage swing RL = 1 kΩ ±8 ±7.6 ±7.4 ±7.4 V Min

Differential output current drive RL = 20Ω 120 110 100 100 mA Min

Output balance error PIN = -20 dBm, f = 100 kHz -58 dB Typ

Closed-loop output impedance f = 1 MHz 0.1 Ω Typ(single-ended)

(1) See Maximum Die Temperature to Prevent Oscillation section in the Application Information of this data sheet.

4 Submit Documentation Feedback Copyright © 2002–2011, Texas Instruments Incorporated

Product Folder Link(s): THS4502 THS4503

Page 5: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

ELECTRICAL CHARACTERISTICS VS = ±5 V (continued)Rf = Rg = 499Ω , RL = 800 Ω, G = +1, Single-ended input unless otherwise noted.

THS4502 AND THS4503

TYP OVER TEMPERATURE (1)MIN/PARAMETER TEST CONDITIONSTYP/0°C to -40°C to25°C 25°C UNITS MAX70°C 85°C

OUTPUT COMMON-MODE VOLTAGE CONTROL

Small-signal bandwidth RL = 400Ω 180 MHz Typ

Slew rate 2 VPP step 87 V/µs Typ

Minimum gain 1 0.98 0.98 0.98 V/V Min

Maximum gain 1 1.02 1.02 1.02 V/V Max

Common-mode offset voltage +2 -1.6/+6.8 -3.6/+8.8 -4.6/+9.8 mV Max

Input bias current VOCM = 2.5 V 100 150 170 170 µA Max

Input voltage range ±4 ±3.7 ±3.4 ±3.4 V Min

Input impedance 25 || 1 kΩ || pF Typ

Maximum default voltage VOCM left floating 0 0.05 0.10 0.10 V Max

Minimum default voltage VOCM left floating 0 -0.05 -0.10 -0.10 V Min

POWER SUPPLY

Specified operating voltage ±5 ±8.25 ±8.25 ±8.25 V Max

Maximum quiescent current 23 28 32 34 mA Max

Minimum quiescent current 23 18 14 12 mA Min

Power supply rejection (±PSRR) 80 76 73 70 dB Min

POWER DOWN (THS4502 ONLY)

Enable voltage threshold Device enabled ON above -2.9 V -2.9 V Min

Disable voltage threshold Device disabled OFF below -4.3 V -4.3 V Max

Power-down quiescent current 800 1000 1200 1200 µA Max

Input bias current 200 240 260 260 µA Max

Input impedance 50 || 1 kΩ || pF Typ

Turnon time delay 1000 ns Typ

Turnoff time delay 800 ns Typ

ELECTRICAL CHARACTERISTICS VS = 5 VRf = Rg = 499 Ω, RL = 800 Ω, G = +1, Single-ended input unless otherwise noted.

THS4502 AND THS4503

TYP OVER TEMPERATURE (1)MIN/TPARAMETER TEST CONDITIONSYP/M0°C to -40°C to25°C 25°C UNITS AX70°C 85°C

AC PERFORMANCE

G = +1, PIN = -20 dBm, Rf = 392 Ω 320 MHz Typ

G = +2, PIN = -30 dBm, Rf = 1 kΩ 160 MHz TypSmall-signal bandwidth

G = +5, PIN = -30 dBm, Rf = 1.3 kΩ 60 MHz Typ

G = +10, PIN = -30 dBm, Rf = 1.3 kΩ 30 MHz Typ

Gain-bandwidth product G > +10 300 MHz Typ

Bandwidth for 0.1 dB flatness PIN = -20 dBm 180 MHz Typ

Large-signal bandwidth VP = 1 V 200 MHz Typ

Slew rate 2 VPP Step 1300 V/µs Typ

Rise time 2 VPP Step 0.6 ns Typ

Fall time 2 VPP Step 0.8 ns Typ

Settling time to 0.01% VO = 2 V Step 13.1 ns Typ

(1) See Maximum Die Temperature to Prevent Oscillation section in the Application Information of this data sheet.

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 5

Product Folder Link(s): THS4502 THS4503

Page 6: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

ELECTRICAL CHARACTERISTICS VS = 5 V (continued)Rf = Rg = 499 Ω, RL = 800 Ω, G = +1, Single-ended input unless otherwise noted.

THS4502 AND THS4503

TYP OVER TEMPERATURE (1)MIN/TPARAMETER TEST CONDITIONSYP/M0°C to -40°C to25°C 25°C UNITS AX70°C 85°C

Settling time to 0.1% VO = 2 V Step 8.3 ns Typ

Harmonic distortion VO = 2 VPP Typ

f = 8 MHz, -81 dBc Typ2nd harmonic

f = 30 MHz -60 dBc Typ

f = 8 MHz -74 dBc Typ3rd harmonic

f = 30 MHz -62 dBc Typ

Input voltage noise f > 1 MHz 6.8 nV/√Hz Typ

Input current noise f > 100 kHz 1.6 pA/√Hz Typ

Overdrive recovery time Overdrive = 5.5 V 75 ns Typ

DC PERFORMANCE

Open-loop voltage gain 54 51 49 49 dB Min

Input offset voltage -0.6 -3.6/+2.4 -4.6/+3.4 -5.6/+4.4 mV Max

Average offset voltage drift ±10 ±10 µV/°C Typ

Input bias current 4 4.6 5 5.2 µA Max

Average bias current drift ±10 ±10 nA/°C Typ

Input offset current 0.5 0.7 1.2 1.2 µA Max

Average offset current drift ±20 ±20 nA/°C Typ

INPUT

Common-mode input range 1 / 4 1.3 / 3.7 1.6 / 3.4 1.6 / 3.4 V Min

Common-mode rejection ratio 80 74 70 70 dB Min

Input Impedance 107 || 1 Ω || pF Typ

OUTPUT

Differential output voltage swing RL = 1 kΩ, Referenced to 2.5 V ±3.3 ±2.8 ±2.6 ±2.6 V Min

Output current drive RL = 20Ω 100 90 80 80 mA Min

Output balance error PIN = -20 dBm, f = 100 kHz -58 dB Typ

Closed-loop output impedance f = 1 MHz 0.1 Ω Typ(single-ended)

OUTPUT COMMON-MODE VOLTAGE CONTROL

Small-signal bandwidth RL = 400 Ω 180 MHz Typ

Slew rate 2 VPP Step 80 V/µs Typ

Minimum gain 1 0.98 0.98 0.98 V/V Min

Maximum gain 1 1.02 1.02 1.02 V/V Max

Common-mode offset voltage 2 -2.2/6.2 -4.2/8.2 -5.2/9.2 mV Max

Input bias current VOCM = 2.5 V 1 2 3 3 µA Max

Input voltage range 1/4 1.2/3.8 1.3/3.7 1.3/3.7 V Min

Input impedance 25 || 1 kΩ || pF Typ

Maximum default voltage VOCM left floating 2.5 2.55 2.6 2.6 V Max

Minimum default voltage VOCM left floating 2.5 2.45 2.4 2.4 V Min

POWER SUPPLY

Specified operating voltage 5 16.5 16.5 16.5 V Max

Maximum quiescent current 20 25 29 31 mA Max

Minimum quiescent current 20 16 12 10 mA Min

Power supply rejection (+PSRR) 75 72 69 66 dB Min

6 Submit Documentation Feedback Copyright © 2002–2011, Texas Instruments Incorporated

Product Folder Link(s): THS4502 THS4503

Page 7: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

ELECTRICAL CHARACTERISTICS VS = 5 V (continued)Rf = Rg = 499 Ω, RL = 800 Ω, G = +1, Single-ended input unless otherwise noted.

THS4502 AND THS4503

TYP OVER TEMPERATURE (1)MIN/TPARAMETER TEST CONDITIONSYP/M0°C to -40°C to25°C 25°C UNITS AX70°C 85°C

POWER DOWN (THS4502 ONLY)

Enable voltage threshold Device enabled ON above 2.1 V 2.1 V Min

Disable voltage threshold Device disabled OFF below 0.7 V 0.7 V Max

Power-down quiescent current 600 800 1200 1200 µA Max

Input bias current 100 125 140 140 µA Max

Input impedance 50 || 1 kΩ || pF Typ

Turnon time delay 1000 ns Typ

Turnoff time delay 800 ns Typ

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 7

Product Folder Link(s): THS4502 THS4503

Page 8: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

TYPICAL CHARACTERISTICS

Table of Graphs (±5 V)

FIGURE

Small signal unity gain frequency response 1

Small signal frequency response 2

0.1 dB gain flatness frequency response 3

Harmonic distortion (single-ended input to differential output) vs Frequency 4, 6, 12, 14

Harmonic distortion (differential input to differential output) vs Frequency 5, 7, 13, 15

Harmonic distortion (single-ended input to differential output) vs Output voltage swing 8, 10, 16, 18

Harmonic distortion (differential input to differential output) vs Output voltage swing 9, 11, 17, 19

Harmonic distortion (single-ended input to differential output) vs Load resistance 20

Harmonic distortion (differential input to differential output) vs Load resistance 21

Third order intermodulation distortion (single-ended input to differential output) vs Frequency 22

Third order output intercept point vs Frequency 23

Slew rate vs Differential output voltage step 24

Settling time 25, 26

Large-signal transient response 27

Small-signal transient response 28

Overdrive recovery 29, 30

Voltage and current noise vs Frequency 31

Rejection ratios vs Frequency 32

Rejection ratios vs Case temperature 33

Output balance error vs Frequency 34

Open-loop gain and phase vs Frequency 35

Open-loop gain vs Case temperature 36

Input bias and offset current vs Case temperature 37

Quiescent current vs Supply voltage 38

Input offset voltage vs Case temperature 39

Common-mode rejection ratio vs Input common-mode range 40

Differential output current drive vs Case temperature 41

Harmonic distortion (single-ended and differential input to differential output) vs Output common-mode voltage 42

Small signal frequency response at VOCM 43

Output offset voltage at VOCM vs Output common-mode voltage 44

Quiescent current vs Power-down voltage 45

Turnon and turnoff delay times 46

Single-ended output impedance in power down vs Frequency 47

Power-down quiescent current vs Case temperature 48

Power-down quiescent current vs Supply voltage 49

8 Submit Documentation Feedback Copyright © 2002–2011, Texas Instruments Incorporated

Product Folder Link(s): THS4502 THS4503

Page 9: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

Table of Graphs (5 V)

FIGURE

Small signal unity gain frequency response 50

Small signal frequency response 51

0.1 dB gain flatness frequency response 52

Harmonic distortion (single-ended input to differential output) vs Frequency 53, 54, 61, 63

Harmonic distortion (differential input to differential output) vs Frequency 55, 56, 62, 64

Harmonic distortion (single-ended input to differential output) vs Output voltage swing 57, 58, 65, 67

Harmonic distortion (differential input to differential output) vs Output voltage swing 59, 60, 66, 68

Harmonic distortion (single-ended input to differential output) vs Load resistance 69

Harmonic distortion (differential input to differential output) vs Load resistance 70

Slew rate vs Differential output voltage step 71

Large-signal transient response 72

Small-signal transient response 73

Voltage and current noise vs Frequency 74

Rejection ratios vs Frequency 75

Rejection ratios vs Case temperature 76

Output balance error vs Frequency 77

Open-loop gain and phase vs Frequency 78

Open-loop gain vs Case temperature 79

Input bias and offset current vs Case temperature 80

Quiescent current vs Supply voltage 81

Input offset voltage vs Case temperature 82

Common-mode rejection ratio vs Input common-mode range 83

Output drive vs Case temperature 84

Harmonic distortion (single-ended and differential input) vs Output common-mode range 85

Small signal frequency response at VOCM 86

Output offset voltage vs Output common-mode voltage 87

Quiescent current vs Power-down voltage 88

Turnon and turnoff delay times 89

Single-ended output impedance in power down vs Frequency 90

Power-down quiescent current vs Case temperature 91

Power-down quiescent current vs Supply voltage 92

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 9

Product Folder Link(s): THS4502 THS4503

Page 10: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

-20

2

4

6

8

10

12

14

16

18

20

22

0.1 1 10 100 1000

f - Frequency - MHzS

mal

l Sig

nal

Gai

n -

dB

SMALL SIGNAL FREQUENCY RESPONSE

Gain = 10, Rf = 1.3 kΩ

Gain = 5, Rf = 1.3 kΩ

Gain = 2, Rf = 1 kΩ

RL = 800 ΩPIN = -30 dBmVS = ±5 V

-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

0

0.5

1

0.1 1 10 100 1000

f - Frequency - MHz

Sm

all S

ign

al U

nit

y G

ain

- d

B

SMALL SIGNAL UNITY GAINFREQUENCY RESPONSE

Gain = 1RL = 800 ΩRf = 392 ΩPIN = -20 dBmVS = ±5 V

-0.5

-0.4

-0.3

-0.2

-0.1

0

0.1

1 10 100 1000

Rf = 392 Ω

Rf = 499 Ω

Gain = 1RL = 800 ΩPIN = -20 dBmVS = ±5 V

f - Frequency - MHz

0.1

dB

Gai

n F

latn

ess

- d

B

0.1 dB GAIN FLATNESSFREQUENCY RESPONSE

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Single-Ended Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 ΩVO = 1 VPPVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Differential Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 ΩVO = 1 VPPVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Single-Ended Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 ΩVO = 2 VPPVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Differential Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 ΩVO = 2 VPPVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Single-Ended Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 Ωf= 8 MHzVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Differential Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 Ωf= 8 MHzVS = ±5 V

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

TYPICAL CHARACTERISTICS (±5 V Graphs)

Figure 1. Figure 2. Figure 3.

Figure 4. Figure 5. Figure 6.

Figure 7. Figure 8. Figure 9.

10 Submit Documentation Feedback Copyright © 2002–2011, Texas Instruments Incorporated

Product Folder Link(s): THS4502 THS4503

Page 11: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 1 2 3 4 5 6

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Single-Ended Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 Ωf= 30 MHzVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Single-Ended Input toDifferential OutputGain = 2RL = 800 ΩRf = 499 ΩVO = 1 VPPVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 1 2 3 4 5 6

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

Differential Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 ΩVO = 30 VPPVS = ±5 V

VO - Output Voltage Swing - V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0.1 1 10 100

0

HD2

HD3Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Differential Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 ΩVO = 1 VPPVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Single-Ended Input toDifferential OutputGain = 2RL = 800 ΩRf = 499 ΩVO = 2 VPPVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Differential Input toDifferential OutputGain = 2RL = 800 ΩRf = 499 ΩVO = 2 VPPVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 1 2 3 4 5 6 7 8 9 10

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Single-Ended Input toDifferential OutputGain = 2RL = 800 ΩRf = 1.3 kΩf= 8 MHzVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 1 2 3 4 5 6 7 8 9 10

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Differential Input toDifferential OutputGain = 2RL = 800 ΩRf = 1.3 kΩf= 8 MHzVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 1 2 3 4 5 6 7 8 9 10

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Single-Ended Input toDifferential OutputGain = 2RL = 800 ΩRf = 1.3 kΩf= 30 MHzVS = ±5 V

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

TYPICAL CHARACTERISTICS (±5 V Graphs) (continued)

Figure 10. Figure 11. Figure 12.

Figure 13. Figure 14. Figure 15.

Figure 16. Figure 17. Figure 18.

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 11

Product Folder Link(s): THS4502 THS4503

Page 12: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 1 2 3 4 5 6 7 8 9 10

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Differential Input toDifferential OutputGain = 2RL = 800 ΩRf = 1.3 kΩf= 8 MHzVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 400 800 1200 1600

HD2

HD3H

arm

on

ic D

isto

rtio

n -

dB

c

HARMONIC DISTORTIONvs

LOAD RESISTANCE

RL - Load Resistance - Ω

Single-Ended Input toDifferential OutputGain = 1VO = 2 VPPRf = 499 Ωf= 30 MHzVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 400 800 1200 1600

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

LOAD RESISTANCE

RL - Load Resistance - Ω

Differential Input toDifferential OutputGain = 1VO = 2 VPPRf = 499 Ωf= 30 MHzVS = ±5 V

0

500

1000

1500

2000

2500

3000

0 0.5 1 1.5 2 2.5 3 3.5 4

VO - Differential Output Voltage Step - V

SR

- S

lew

Rat

e -

SLEW RATEvs

DIFFERENTIAL OUTPUT VOLTAGE STEP

V/

Gain = 1RL = 800 ΩRf = 499 Ωf= 8 MHzVS = ±5 V

-100

-90

-80

-70

-60

-50

10 100

Th

ird

-Ord

er In

term

od

ula

tio

n D

isto

rtio

n -

dB

c

THIRD-ORDER INTERMODULATIONDISTORTION

vsFREQUENCY

f - Frequency - MHz

Single-Ended Input toDifferential OutputGain = 1VO = 2 VPPRf = 392 ΩVS = ±5 VTone Spacing = 200 kHz 40

30

20

150 10 20 30 40 50 60

Th

ird

-Ord

er O

utp

ut

Inte

rsep

t P

oin

t -

dB

m

50

55

f - Frequency - MHz

THIRD-ORDER OUTPUT INTERCEPT POINT

vsFREQUENCY

60

70 80 90 100

45

35

25

Normalized to 200 Ω

Gain = 1Rf = 392 ΩVS = ± 5 VTone Spacing = 200 kHz

OIP3 RL= 800 Ω

Normalized to 50 Ω

-1.5

-1

-0.5

0

0.5

1

1.5

0 5 10 15 20

t - Time - ns

- O

utp

ut

Volt

age

- V

SETTLING TIME

V O

Gain = 1RL = 800 ΩRf = 499 Ωf= 1 MHzVS = ±5 V

Rising Edge

Falling Edge

-2.5

-2

-1.5

-1

-0.5

0

0.5

1

1.5

2

2.5

0 5 10 15 20

t - Time - ns

- O

utp

ut

Volt

age

- V

SETTLING TIME

V O

Gain = 1RL = 800 ΩRf = 499 Ωf= 1 MHzVS = ±5 V

Rising Edge

Falling Edge

-3

-2

-1

0

1

2

3

-100 0 100 200 300 400 500

t - Time - ns

- O

utp

ut

Volt

age

- V

LARGE-SIGNAL TRANSIENT RESPONSE

V O

Gain = 1RL = 800 ΩRf = 499 Ωtr/tf = 300 psVS = ±5 V

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

TYPICAL CHARACTERISTICS (±5 V Graphs) (continued)

Figure 19. Figure 20. Figure 21.

Figure 22. Figure 23. Figure 24.

Figure 25. Figure 26. Figure 27.

12 Submit Documentation Feedback Copyright © 2002–2011, Texas Instruments Incorporated

Product Folder Link(s): THS4502 THS4503

Page 13: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

t - Time - µs

0

-1

-4

0 0.1 0.2 0.3 0.4 0.5 0.6S

ing

le-E

nd

ed O

utp

ut

Volt

age

- V

1

2

OVERDRIVE RECOVERY

4

0.7 0.8 0.9 1

3

-3

-5

-2

5

0

-0.5

-2

0.5

1

2

1.5

-1.5

-2.5

-1

2.5

- In

pu

t Vo

ltag

e -

VV

I

Gain = 4RL = 800 ΩRf = 499 ΩOverdrive = 4.5 VVS = ±5 V

-0.4

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

0.4

-100 0 100 200 300 400 500

t - Time - ns

- O

utp

ut

Volt

age

- V

SMALL-SIGNAL TRANSIENT RESPONSE

V O

Gain = 1RL = 800 ΩRf = 499 Ωtr/tf = 300 psVS = ±5 V

-6

-4

-2

0

2

4

6

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1-3

-2

-1

0

1

2

3

t - Time - µs

Sin

gle

-En

ded

Ou

tpu

t Vo

ltag

e -

V

OVERDRIVE RECOVERY

- In

pu

t Vo

ltag

e -

VV

I

Gain = 4RL = 800 ΩRf = 499 ΩOverdrive = 5.5 VVS = ±5 V

-10

0

10

20

30

40

50

60

70

80

90

0.1 1 10 100

Rej

ecti

on

Rat

ios

- d

B

REJECTION RATIOSvs

FREQUENCY

f - Frequency - MHz

PSRR+

PSRR-

CMMR

RL = 800 ΩVS = ±5 V

0

10

20

30

40

50

60

70

80

90

100

-40-30-20-10 0 10 20 30 40 50 60 70 80 90

Rej

ecti

on

Rat

ios

- d

B

REJECTION RATIOSvs

CASE TEMPERATURE

Case Temperature - °C

PSRR+

PSRR-

CMMR

RL = 800 ΩVS = ±5 V

1

10

100

0.01 0.1 1 10 100

Vn

In

f - Frequency - kHz

- Vo

ltag

e N

ois

e -

VOLTAGE AND CURRENT NOISEvs

FREQUENCY

nV

/H

zV

n

- C

urr

ent

No

ise

-p

A/

Hz

I n

1000 10 k

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

Ou

tpu

t B

alan

ce E

rro

r -

dB

OUTPUT BALANCE ERRORvs

FREQUENCY

f - Frequency - MHz

PIN = -20 dBmRL = 800 ΩRf = 499 ΩVS = ±5 V

0

10

20

30

40

50

60

0.01 0.1 1 10 100 1000-150

-120

-90

-60

-30

0

30

Op

en-L

oo

p G

ain

- d

B

OPEN-LOOP GAIN AND PHASEvs

FREQUENCY

f - Frequency - MHz

PIN = -30 dBmRL = 800 ΩRf = 100 kΩVS = ±5 V

Ph

ase

-

Gain

Phase

°

48

49

50

51

52

53

54

55

56

57

-40-30-20-10 0 10 20 30 40 50 60 70 80 90

Op

en-L

oo

p G

ain

- d

B

OPEN-LOOP GAINvs

CASE TEMPERATURE

Case Temperature - °C

RL = 800 ΩVS = ±5 V

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

TYPICAL CHARACTERISTICS (±5 V Graphs) (continued)

Figure 28. Figure 29. Figure 30.

Figure 31. Figure 32. Figure 33.

Figure 34. Figure 35. Figure 36.

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 13

Product Folder Link(s): THS4502 THS4503

Page 14: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

0

0.25

0.5

0.75

1

1.25

1.5

1.75

2

2.25

-40 -30-20-10 0 10 20 30 40 50 60 70 80 900.05

0.06

0.07

0.08

0.09

0.1

0.11

0.12

0.13

0.14

- In

pu

t B

ias

Cu

rren

t -

INPUT BIAS AND OFFSET CURRENTvs

CASE TEMPERATURE

Case Temperature - °C

VS = ±5 V

- In

pu

t O

ffse

t C

urr

ent

-

IIB-

I IB

I OS

IIB+

IOS

0

5

10

15

20

25

30

35

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

VS - Supply Voltage - ±V

Qu

iesc

ent

Cu

rren

t -

mA

QUIESCENT CURRENTvs

SUPPLY VOLTAGE

TA = 85°C

TA = 25°C

TA = -40°C

0

0.5

1

1.5

2

2.5

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90

Case Temperature - °C

- In

pu

t O

ffse

t Vo

ltag

e -

mV

INPUT OFFSET VOLTAGEvs

CASE TEMPERATURE

VO

S

VS = ±5 V

-150

-100

-50

0

50

100

150

200

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90

Dif

fere

nti

al O

utp

ut

Cu

rren

t D

rive

- m

A

DIFFERENTIAL OUTPUT CURRENT DRIVEvs

CASE TEMPERATURE

Case Temperature - °C

VS = ±5 V Source

Sink

-100

10

20

30

40

50

60

70

80

90

100

110

-6 -4 -2 0 2 4 6

Input Common-Mode Voltage Range - V

CM

RR

- C

om

mo

n-M

od

e R

ejec

tio

n R

atio

- d

B

COMMON-MODE REJECTION RATIOvs

INPUT COMMON-MODE RANGE

VS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

-3.5 -2.5 -1.5 -0.5 0.5 1.5 2.5 3.5

VOC - Output Common-Mode Voltage - V

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT COMMON-MODE VOLTAGE

HD2-SE

HD3-SE and Diff

Single-Ended and DifferentialInput to Differential OutputGain = 1, VO = 2 VPPf= 8 MHz, Rf = 499 ΩVS = ±5 V

HD2-Diff

-3

-2

-1

0

1

2

3

1 10 100 1000

SMALL SIGNAL FREQUENCY RESPONSEAT VOCM

f - Frequency - MHz

Gain = 1RL = 800 ΩRf = 499 ΩPIN= -20 dBmVS = ±5 V

Sm

all S

ign

al F

req

uen

cy R

esp

on

se a

tV O

CM

- d

B

-600

-400

-200

0

200

400

600

-5 -4 -3 -2 -1 0 1 2 3 4 5

VOC - Output Common-Mode Voltage - V

- O

utp

ut

Off

set

Volt

age

at

OUTPUT OFFSET VOLTAGE AT VOCMvs

OUTPUT COMMON-MODE VOLTAGE

VO

SV

OC

M-

mV

-5

0

5

10

15

20

25

30

-5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0

Power-Down Voltage - V

Qu

iesc

ent

Cu

rren

t -

mA

QUIESCENT CURRENTvs

POWER-DOWN VOLTAGE

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

TYPICAL CHARACTERISTICS (±5 V Graphs) (continued)

Figure 37. Figure 38. Figure 39.

Figure 40. Figure 41. Figure 42.

Figure 43. Figure 44. Figure 45.

14 Submit Documentation Feedback Copyright © 2002–2011, Texas Instruments Incorporated

Product Folder Link(s): THS4502 THS4503

Page 15: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

-1

-2

-5

0 0.5 1 2

0

100.5101 102 103

-3

-6

-4

0

0.01

0.03

0.02

t - Time - ms

Po

wer

do

wn

Vo

ltag

e S

ign

al -

V

TURNON AND TURNOFF DELAY TIMES

Qu

iesc

ent

Cu

rren

t -

mA

1.5 2.5 3

Current

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-40 -30 -20-10 0 10 20 30 40 50 60 70 80 90

Po

wer

-Do

wn

Qu

iesc

ent

Cu

rren

t -

mA

POWER-DOWN QUIESCENT CURRENTvs

CASE TEMPERATURE

Case Temperature - °C

RL = 800 ΩVS = ±5 V

0

100

200

300

400

500

600

700

800

900

1000

1100

0.1 1 10 100 1000

- S

ing

le-E

nd

ed O

utp

ut

Imp

edan

ce

SINGLE-ENDED OUTPUT IMPEDANCEIN POWER DOWN

vsFREQUENCY

ZO

f - Frequency - MHz

Gain = 1RL = 800 ΩRf = 392 ΩPIN = -1 dBmVS = ±5 V

in P

ow

er D

ow

n -

Ω

0

100

200

300

400

500

600

700

800

900

1000

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

VS - Supply Voltage - ±V

Po

wer

-Do

wn

Qu

iesc

ent

Cu

rren

t -

POWER-DOWN QUIESCENT CURRENTvs

SUPPLY VOLTAGE

RL = 800 Ω

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

TYPICAL CHARACTERISTICS (±5 V Graphs) (continued)

Figure 46. Figure 47. Figure 48.

Figure 49.

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 15

Product Folder Link(s): THS4502 THS4503

Page 16: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

-20

2

4

6

8

10

12

14

16

18

20

22

0.1 1 10 100 1000

f - Frequency - MHzS

mal

l Sig

nal

Gai

n -

dB

SMALL SIGNAL FREQUENCY RESPONSE

Gain = 10, Rf = 1.3 kΩ

Gain = 5, Rf = 1.3 kΩ

Gain = 2, Rf = 1 kΩ

RL = 800 ΩPIN = -30 dBmVS = 5 V

-4

-3

-2

-1

0

1

0.1 1 10 100 1000

f - Frequency - MHz

Sm

all S

ign

al U

nit

y G

ain

- d

B

SMALL SIGNAL UNITY GAINFREQUENCY RESPONSE

Gain = 1RL = 800 ΩRf = 392 ΩPIN = -20 dBmVS = 5 V

-0.5

-0.4

-0.3

-0.2

-0.1

0

0.2

1 10 100 1000

Rf = 392 Ω

Rf = 499 Ω

f - Frequency - MHz

0.1

dB

Gai

n F

latn

ess

- d

B

0.1 dB GAIN FLATNESSFREQUENCY RESPONSE

Gain = 1RL = 800 ΩPIN = -20 dBmVS = 5 V

0.1

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Single-Ended Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 ΩVO = 1 VPPVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Single-Ended Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 ΩVO = 2 VPPVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Differential Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 ΩVO = 1 VPPVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Differential Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 ΩVO = 2 VPPVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Single-Ended Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 Ωf= 8 MHzVS = ±5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Single-Ended Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 Ωf= 30 MHzVS = 5 V

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

TYPICAL CHARACTERISTICS (5 V GRAPHS)

Figure 50. Figure 51. Figure 52.

Figure 53. Figure 54. Figure 55.

Figure 56. Figure 57. Figure 58.

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-90

-80

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-50

-40

-30

-20

-10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Differential Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 Ωf= 8 MHzVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Differential Input toDifferential OutputGain = 1RL = 800 ΩRf = 499 Ωf= 30 MHzVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2HD3H

arm

on

ic D

isto

rtio

n -

dB

c

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Single-Ended Input toDifferential OutputGain = 2RL = 800 ΩRf = 499 ΩVO = 1 VPPVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0.1 1 10 100

0

HD2HD3H

arm

on

ic D

isto

rtio

n -

dB

c

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Differential Input toDifferential OutputGain = 2RL = 800 ΩRf = 499 ΩVO = 1 VPPVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.1 1 10 100

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Single-Ended Input toDifferential OutputGain = 2RL = 800 ΩRf = 499 ΩVO = 2 VPPVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0.1 1 10 100

0

HD2

HD3H

arm

on

ic D

isto

rtio

n -

dB

c

HARMONIC DISTORTIONvs

FREQUENCY

f - Frequency - MHz

Differential Input toDifferential OutputGain = 2RL = 800 ΩRf = 499 ΩVO = 2 VPPVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Single-Ended Input toDifferential OutputGain = 2RL = 800 ΩRf = 1.3 kΩf= 8 MHzVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Differential Input toDifferential OutputGain = 2RL = 800 ΩRf = 1.3 kΩf= 8 MHzVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Single-Ended Input toDifferential OutputGain = 2RL = 800 ΩRf = 1.3 kΩf= 30 MHzVS = 5 V

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

TYPICAL CHARACTERISTICS (5 V GRAPHS) (continued)

Figure 59. Figure 60. Figure 61.

Figure 62. Figure 63. Figure 64.

Figure 65. Figure 66. Figure 67.

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 17

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0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT VOLTAGE SWING

VO - Output Voltage Swing - V

Differential Input toDifferential OutputGain = 2RL = 800 ΩRf = 1.3 kΩf= 8 MHzVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 400 800 1200 1600

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

LOAD RESISTANCE

RL - Load Resistance - Ω

Single-Ended Input toDifferential OutputGain = 1VO = 2 VPPRf = 499 Ωf= 30 MHzVS = 5 V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0 400 800 1200 1600

HD2

HD3

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

LOAD RESISTANCE

RL - Load Resistance - Ω

Differential Input toDifferential OutputGain = 1VO = 2 VPPRf = 499 Ωf= 30 MHzVS = 5 V

-100 0 100 200 300 400 500

t - Time - ns

- O

utp

ut

Volt

age

- V

LARGE-SIGNAL TRANSIENT RESPONSE

V O

-2

-1.5

-1

-0.5

0

0.5

1

1.5

2

Gain = 1RL = 800 ΩRf = 499 Ωtr/tf = 300 psVS = 5 V

-0.4

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

0.4

-100 0 100 200 300 400 500

t - Time - ns

- O

utp

ut

Volt

age

- V

SMALL-SIGNAL TRANSIENT RESPONSE

V O

Gain = 1RL = 800 ΩRf = 499 Ωtr/tf = 300 psVS = 5 V

0

200

400

600

800

1000

1600

0 0.5 1 1.5 2 2.5 3 3.5 4

VO - Differential Output Voltage Step - V

SR

- S

lew

Rat

e -

SLEW RATEvs

DIFFERENTIAL OUTPUT VOLTAGE STEP

V/

1200

1400Gain = 1RL = 800 ΩRf = 499 ΩVS = 5 V

-10

0

10

20

30

40

50

60

70

80

90

0.1 1 10 100

Rej

ecti

on

Rat

ios

- d

B

REJECTION RATIOSvs

FREQUENCY

f - Frequency - MHz

PSRR+

PSRR-

CMMR

RL = 800 ΩVS = 5 V

-40-30-20-10 0 10 20 30 40 50 60 70 80 90

Rej

ecti

on

Rat

ios

- d

B

REJECTION RATIOSvs

CASE TEMPERATURE

Case Temperature - °C

PSRR+

PSRR-

CMMR

RL = 800 ΩVS = 5 V

0

20

40

60

80

100

120

1

10

100

0.01 0.1 1 10 100

Vn

In

f - Frequency - kHz

- Vo

ltag

e N

ois

e -

VOLTAGE AND CURRENT NOISEvs

FREQUENCY

nV

/H

zV

n

- C

urr

ent

No

ise

-p

A/

Hz

I n

1000 10 k

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

TYPICAL CHARACTERISTICS (5 V GRAPHS) (continued)

Figure 68. Figure 69. Figure 70.

Figure 71. Figure 72. Figure 73.

Figure 74. Figure 75. Figure 76.

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0

0.1 1 10 100

Ou

tpu

t B

alan

ce E

rro

r -

dB

OUTPUT BALANCE ERRORvs

FREQUENCY

f - Frequency - MHz

PIN = -20 dBmRL = 800 ΩRf = 499 ΩVS = 5 V

0

10

20

30

40

50

60

0.01 0.1 1 10 100 1000-150

-120

-90

-60

-30

0

30

Op

en-L

oo

p G

ain

- d

B

OPEN-LOOP GAIN AND PHASEvs

FREQUENCY

f - Frequency - MHz

PIN = -30 dBmRL = 800 ΩRf = 100 kΩVS = 5 V

Ph

ase

-

Gain

Phase

°

-40-30-20-10 0 10 20 30 40 50 60 70 80 90

Op

en-L

oo

p G

ain

- d

B

OPEN-LOOP GAINvs

CASE TEMPERATURE

Case Temperature - °C

RL = 800 ΩVS = 5 V

46

47

48

49

50

51

52

53

54

55

56

57

0

0.25

0.5

0.75

1

1.25

1.5

1.75

2

2.25

-40 -30-20-10 0 10 20 30 40 50 60 70 80 900.05

0.06

0.07

0.08

0.09

0.1

0.11

0.12

0.13

0.14

- In

pu

t B

ias

Cu

rren

t -

INPUT BIAS AND OFFSET CURRENTvs

CASE TEMPERATURE

Case Temperature - °C

VS = ±5 V

- In

pu

t O

ffse

t C

urr

ent

-

IIB-

I IB

I OS

IIB+

IOS

0

0.5

1

1.5

2

2.5

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90

Case Temperature - °C

- In

pu

t O

ffse

t Vo

ltag

e -

mV

INPUT OFFSET VOLTAGEvs

CASE TEMPERATURE

VO

S

VS = 5 V

0

5

10

15

20

25

30

35

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

VS - Supply Voltage - ±V

Qu

iesc

ent

Cu

rren

t -

mA

QUIESCENT CURRENTvs

SUPPLY VOLTAGE

TA = 85°C

TA = 25°C

TA = -40°C

-150

-100

-50

0

50

100

150

-40-30 -20-10 0 10 20 30 40 50 60 70 80 90

Ou

tpu

t D

rive

- m

A

OUTPUT DRIVEvs

CASE TEMPERATURE

Case Temperature - °C

VS = 5 V Source

Sink

-100

-90

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-50

-40

-30

-20

-10

0

Har

mo

nic

Dis

tort

ion

- d

Bc

HARMONIC DISTORTIONvs

OUTPUT COMMON-MODE VOLTAGE

VOCM - Output Common-Mode Voltage - V

Single-Ended andDifferential InputGain = 1VO = 2 VPPRf = 499 Ωf= 8 MHzVS = 5 V

1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5

HD3-SE

HD3-Diff

HD2-DiffHD2-SE

0

10

20

30

40

50

60

70

80

90

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Input Common-Mode Voltage Range - V

CM

RR

- C

om

mo

n-M

od

e R

ejec

tio

n R

atio

- d

B

COMMON-MODE REJECTION RATIOvs

INPUT COMMON-MODE RANGE

VS = 5 V

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

TYPICAL CHARACTERISTICS (5 V GRAPHS) (continued)

Figure 77. Figure 78. Figure 79.

Figure 80. Figure 81. Figure 82.

Figure 83. Figure 84. Figure 85.

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 19

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-3

-2

-1

0

1

2

3

1 10 100 1000

SMALL SIGNAL FREQUENCY RESPONSEat VOCM

f - Frequency - MHz

Gain = 1RL = 800 ΩRf = 499 ΩPIN= -20 dBmVS = 5 V

Sm

all S

ign

al F

req

uen

cy R

esp

on

se a

tV O

CM

- d

B

-800

-600

-400

-200

0

200

400

600

800

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

VOC - Output Common-Mode Voltage - V

- O

utp

ut

Off

set

Volt

age

- m

V

OUTPUT OFFSET VOLTAGEvs

OUTPUT COMMON-MODE VOLTAGE

VO

S0

5

10

15

20

25

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5

Power-down Voltage - V

Qu

iesc

ent

Cu

rren

t -

mA

QUIESCENT CURRENTvs

POWER-DOWN VOLTAGE

-1

-2

-5

0 0.5 1 2

0

100.5101 102 103

-3

-6

-4

0

0.01

0.03

0.02

t - Time - ms

Po

wer

do

wn

Vo

ltag

e S

ign

al -

V

TURNON AND TURNOFF DELAY TIMES

Qu

iesc

ent

Cu

rren

t -

mA

1.5 2.5 3

Current

-40 -30 -20-10 0 10 20 30 40 50 60 70 80 90

POWER-DOWN QUIESCENT CURRENTvs

CASE TEMPERATURE

Case Temperature - °C

RL = 800 ΩVS = 5 V

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Po

wer

-Do

wn

Qu

iesc

ent

Cu

rren

t -

mA

0

100

200

300

400

500

600

700

800

900

1000

1100

0.1 1 10 100 1000

- S

ing

le-E

nd

ed O

utp

ut

Imp

edan

ce

SINGLE-ENDED OUTPUT IMPEDANCEIN POWER DOWN

vsFREQUENCY

ZO

in P

ow

er D

ow

n -

f - Frequency - MHz

Gain = 1RL = 400 ΩRf = 392 ΩPIN = -1 dBmVS = 5 V

Ω

0

100

200

300

400

500

600

700

800

900

1000

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

VS - Supply Voltage - V

POWER-DOWN QUIESCENT CURRENTvs

SUPPLY VOLTAGE

Po

wer

-Do

wn

Qu

iesc

ent

Cu

rren

t -

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

TYPICAL CHARACTERISTICS (5 V GRAPHS) (continued)

Figure 86. Figure 87. Figure 88.

Figure 89. Figure 90. Figure 91.

Figure 92.

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THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

APPLICATION INFORMATION

10V, RL = 800 Ω differential, and the quiescentcurrent = 32mA (the maximum over 0°C to 70°CMAXIMUM DIE TEMPERATURE TO PREVENTtemperature range). The last entry for each packageOSCILLATIONoption lists the worst case where the output voltage is

The THS4502 and THS4503 may have low level 5V DC.oscillation when the die temperature (also calledjunction temperature) exceeds +60°C and is not Table 1. Estimated Maximum Ambientrecommended for new designs where the die Temperature Per Package Optiontemperature is expected to exceed +60°C.

PACKAGE/DEVICE Vout ΘJA TA MAXThe oscillation is due to internal design and external SOIC 0V 28.8°Cconfiguration is not expected to mitigate or reduce the

2 Vpp 28.0°Cproblem. This problem is random due to normal4 Vpp 27.3°CTHS4502Dprocess variations and normal testing cannot identify 97.5°C/WTHS4503D 6 Vpp 26.8°Cproblem units.8 Vpp 26.3°CThe THS4500 and THS4501 are recommended

Worst Case => 5 DC 25.8°Creplacement devices.PWR Pad MSOP 0V 41.3°C

The die temperature depends on the power2 Vpp 40.8°Cdissipation and the thermal resistance of the device4 Vpp 40.4°Cand can be approximated with the following formula: THS4502DGN 58.4°C/WTHS4503DGN 6 Vpp 40.1°CDie Temperature = PDISS × θJA + TA8 Vpp 39.8°CWhere:

Worst Case => 5 DC 39.5°CPDISS ≈ (VS (TOTAL) × IQ) + (VS+ – VOUT) × IOUTMSOP 0V -23.2°C

Table 1 shows the estimated maximum ambient2 Vpp -25.3°Ctemperature (TA max) in °C for each package option4 Vpp -27.1°CTHS4502DGKof the THS4502 and THS4503 using the thermal 260°C/WTHS4503DGK 6 Vpp -28.6°Cdissipation rating given in the PACKAGE

DISSIPATION RATINGS table for a JEDEC standard 8 Vpp -29.8°CHigh-K test PCB. For each case shown, VS (TOTAL) = Worst Case => 5 DC -31.3°C

• Choosing the Proper Value for the Feedback andGain ResistorsFULLY DIFFERENTIAL AMPLIFIERS

• Application Circuits Using Fully DifferentialDifferential signaling offers a number of performanceAmplifiersadvantages in high-speed analog signal processing

• Key Design Considerations for Interfacing to ansystems, including immunity to externalAnalog-to-Digital Convertercommon-mode noise, suppression of even-order

nonlinearities, and increased dynamic range. Fully • Setting the Output Common-Mode Voltage Withdifferential amplifiers not only serve as the primary the VOCM Inputmeans of providing gain to a differential signal chain, • Saving Power With Power-Down Functionalitybut also provide a monolithic solution for converting • Linearity: Definitions, Terminology, Circuitsingle-ended signals into differential signals for Techniques, and Design Tradeoffseasier, higher performance processing. The THS4500

• An Abbreviated Analysis of Noise in Fullyfamily of amplifiers contains products in TexasDifferential AmplifiersInstruments' expanding line of high-performance fully

• Printed-Circuit Board Layout Techniques fordifferential amplifiers. Information on fully differentialOptimal Performanceamplifier fundamentals, as well as implementation

specific information, is presented in the applications • Power Dissipation and Thermal Considerationssection of this data sheet to provide a better • Power Supply Decoupling Techniques andunderstanding of the operation of the THS4500 family Recommendationsof devices, and to simplify the design process for • Evaluation Fixtures, Spice Models, anddesigns using these amplifiers.

Applications Support• Additional Reference MaterialApplications Section

• Fully Differential Amplifier Terminal Functions• Input Common-Mode Voltage Range and the

THS4500 Family

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VOCM

+VSVS

RS Rg1

Rg2

Rf1

Rf2

+

-

RT

-+

Application Circuit for the THS4500 and THS4501,Featuring Single-Supply Operation With aGround-Referenced Input Signal

VIN- 1

2

3

4

8

7

6

5

VOCM

VS+

VOUT+

VIN+

VS-

VOUT-

PD

Fully Differential Amplifier Pin Diagram

VOCM

+VSVS

RS Rg1

Rg2

Rf1

Rf2

+

-

RT

-+

-VS

Application Circuit for the THS4500 and THS4501,Featuring Split-Supply Operation With an InputSignal Referenced at the Midrail

VOUT VIN

(1–β)–V IN–(1–β) 2VOCMβ2β

VOUT– –VIN

(1–β) V IN–(1–β) 2VOCMβ2β

(1)

(2)

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

FULLY DIFFERENTIAL AMPLIFIERTERMINAL FUNCTIONS

Fully differential amplifiers are typically packaged ineight-pin packages as shown in the diagram. Thedevice pins include two inputs (VIN+,VIN-), two outputs(VOUT-,VOUT+), two power supplies (VS+, VS-), anoutput common-mode control pin (VOCM), and anoptional power-down pin (PD).

Figure 93.

A standard configuration for the device is shown inthe figure. The functionality of a fully differentialamplifier can be imagined as two inverting amplifiersthat share a common noninverting terminal (thoughthe voltage is not necessarily fixed). For moreinformation on the basic theory of operation for fullydifferential amplifiers, refer to the Texas Instrumentsapplication note titled Fully Differential Amplifiers,literature number SLOA054.

INPUT COMMON-MODE VOLTAGE RANGE Figure 94.AND THE THS4500 FAMILY

The key difference between the THS4500/1 and the Equations 1-5 allow for calculation of the requiredTHS4502/3 is the input common-mode range for the input common-mode range for a given set of inputtwo devices. The THS4502 and THS4503 have an conditions.input common-mode range that is centered around

The equations allow calculation of the input common-midrail, and the THS4500 and THS4501 have anmode range requirements given information about theinput common-mode range that is shifted to includeinput signal, the output voltage swing, the gain, andthe negative power supply rail. Selection of one or thethe output common-mode voltage. Calculating theother is determined by the nature of the application.maximum and minimum voltage required for VN andSpecifically, the THS4500 and THS4501 areVP (the amplifier's input nodes) determines whetherdesigned for use in single-supply applications whereor not the input common-mode range is violated orthe input signal is ground-referenced, as depicted innot. Four equations are required. Two calculate theFigure 93. The THS4502 and THS4503 are designedoutput voltages and two calculate the node voltagesfor use in single-supply or split-supply applicationsat VN and VP (note that only one of these needswhere the input signal is centered between the powercalculation, as the amplifier forces a virtual shortsupply voltages, as depicted in Figure 94.between the two nodes).

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VN VIN–(1–β) VOUTβ

Where: β RG

RF RG

VP VIN(1–β) VOUT–β

(3)

(4)

(5)

VOCM

Rg

Rg

Rf

Rf

+

-

-+

Vp

Vn

VOUT-

VOUT+

VIN+

VIN-

Diagram For Input Common-Mode Range Equations

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

Table 2. Negative-Rail Referenced (continued)

Gain VIN+ VIN- VIN VOCM VOD VNMIN VNMAX(V/V) (V) (V) (VPP) (V) (VPP) (V) (V)

NOTE: This table assumes a negative-rail referenced,single-ended input signal on a single 5-V supply as shown inFigure 93. VNMIN = VPMIN and VNMAX = VPMAX

Table 3. Midrail ReferencedNOTEThe equations denote the Gain VIN+ VIN- VIN VOCM VOD VNMIN VNMAXdevice inputs as VN and VP, (V/V) (V) (V) (VPP) (V) (VPP) (V) (V)and the circuit inputs as VIN+ 0.5 to1 2.5 4 2.5 4 2 3and VIN-. 4.5

1.5 to2 2.5 2 2.5 4 2.16 2.833.5

2.0 to4 2.5 1 2.5 4 2.3 2.73.0

2.25 to8 2.5 0.5 2.5 4 2.389 2.612.75

NOTE: This table assumes a midrail referenced, single-endedinput signal on a single 5-V supply. VNMIN = VPMIN and VNMAX =VPMAX

CHOOSING THE PROPER VALUE FOR THEFEEDBACK AND GAIN RESISTORS

The selection of feedback and gain resistors impactsFigure 95. circuit performance in a number of ways. The valuesin this section provide the optimum high frequency

The two tables below depict the input common-mode performance (lowest distortion, flat frequencyrange requirements for two different input scenarios, response). Since the THS4500 family of amplifiers isan input referenced around the negative rail and an developed with a voltage feedback architecture, theinput referenced around midrail. The tables highlight choice of resistor values does not have a dominantthe differing requirements on input common-mode effect on bandwidth, unlike a current feedbackrange, and illustrate reasoning for choosing either the amplifier. However, resistor choices do haveTHS4500/1 or the THS4502/3. For signals referenced second-order effects. For optimal performance, thearound the negative power supply, the THS4500/1 following feedback resistor values are recommended.should be chosen since its input common-mode In higher gain configurations (gain greater than two),range includes the negative supply rail. For all other the feedback resistor values have much less effect onsituations, the THS4502/3 offers slightly improved the high frequency performance. Example feedbackdistortion and noise performance for applications with and gain resistor values are given in the section oninput signals centered between the power supply basic design considerations (Table 4).rails.

Amplifier loading, noise, and the flatness of thefrequency response are three design parameters thatTable 2. Negative-Rail Referencedshould be considered when selecting feedback

Gain VIN+ VIN- VIN VOCM VOD VNMIN VNMAX resistors. Larger resistor values contribute more noise(V/V) (V) (V) (VPP) (V) (VPP) (V) (V) and can induce peaking in the ac response in low

-2.0 to gain configurations, and smaller resistor values can1 0 4 2.5 4 0.75 1.752.0 load the amplifier more heavily, resulting in a-1.0 to reduction in distortion performance. In addition,2 0 2 2.5 4 0.5 1.1671.0 feedback resistor values, coupled with gain-0.5 to requirements, determine the value of the gain4 0 1 2.5 4 0.3 0.70.5 resistors, directly impacting the input impedance of-0.25 the entire circuit. While there are no strict rules about8 0 0.5 2.5 4 0.167 0.389to 0.25 resistor selection, these trends can provide qualitative

design guidance.

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β1 R1

R1 R2β2

R3 RT || RS

R3 RT || RS R4

VOD

VS 2 1–β2

β1 β2 RT

RT RS

VOD

V IN 2 1–β2

β1 β2

(7)

(8)

(9)

Gain VODVIN

VOCM

Vn

VS

RS

R1

RT

R2

R4

-

++-

Vout+

Vout-

R3

VP

RT 1

1RS

–1– K

2(1K)R3

K R2R1

R2 R4

R3 R1 Rs || RT

(6)

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

APPLICATION CIRCUITS USING FULLYDIFFERENTIAL AMPLIFIERS

Fully differential amplifiers provide designers with agreat deal of flexibility in a wide variety ofapplications. This section provides an overview ofsome common circuit configurations and gives somedesign guidelines. Designing the interface to an ADC,driving lines differentially, and filtering with fullydifferential amplifiers are a few of the circuits that arecovered. For more detailed information about balance in fully

differential amplifiers, see Fully Differential Amplifiers,BASIC DESIGN CONSIDERATIONS referenced at the end of this data sheet.The circuits in Figures 96 through 100 are used to

INTERFACING TO AN ANALOG-TO-DIGITALhighlight basic design considerations for fullyCONVERTERdifferential amplifier circuit designs.

The THS4500 family of amplifiers are designedTable 4. Resistor Values for Balanced Operation specifically to interface to today's

in Various Gain Configurations highest-performance analog-to-digital converters.This section highlights the key concerns wheninterfacing to an ADC and provides exampleR2 & R4 (Ω) R1 (Ω) R3 (Ω) RT (Ω)ADC/fully differential amplifier interface circuits.

1 392 412 383 54.9 Key design concerns when interfacing to ananalog-to-digital converter:1 499 523 487 53.6

• Terminate the input source properly. In2 392 215 187 60.4high-frequency receiver chains, the source2 1.3k 665 634 52.3feeding the fully differential amplifier requires a

5 1.3k 274 249 56.2specific load impedance (e.g., 50Ω ).

5 3.32k 681 649 52.3 • Design a symmetric printed-circuit board layout.10 1.3k 147 118 64.9 Even-order distortion products are heavily10 6.81k 698 681 52.3 influenced by layout, and careful attention to a

symmetric layout will minimize these distortionNOTE: Values in this table assume a 50 Ω source impedance.products.

• Minimize inductance in power supply decouplingtraces and components. Poor power supplydecoupling can have a dramatic effect on circuitperformance. Since the outputs are differential,differential currents exist in the power supply pins.Thus, decoupling capacitors should be placed in amanner that minimizes the impedance of thecurrent loop.

• Use separate analog and digital power suppliesand grounds. Noise (bounce) in the power

Figure 96. supplies (created by digital switching currents) cancouple directly into the signal path, and powersupply noise can create higher distortion productsEquations for calculating fully differential amplifieras well.resistor values in order to obtain balanced operation

• Use care when filtering. While an RC low-passin the presence of a 50-Ω source impedance arefilter may be desirable on the output of thegiven in equations 6 through 9.amplifier to filter broadband noise, the excessloading can negatively impact the amplifierlinearity. Filtering in the feedback path does nothave this effect.

• AC-coupling allows easier circuit design. Ifdc-coupling is required, be aware of the excesspower dissipation that can occur due tolevel-shifting the output through the output

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+

- +

-VOCM 12 Bit/80 MSps

IN

IN

5 V

CM

5 V

-5 V

VS

10 µF 0.1 µF

10 µF 0.1 µF

THS4503

Rf

Rf

CF

CF

1 µF

Rg

Rg 0.1 µF

RT

RS

ADS5410

Using the THS4503 With the ADS5410

Riso

Riso

+

- +

-VOCM 14 Bit/40 MSps

IN

IN

5 V

CM

5 VVS

10 µF 0.1 µF

THS4501

Rf

Rf

CF

CF

1 µF

Rg

Rg

RT

RS

ADS5421

0.1 µF

Using the THS4501 With the ADS5421

Riso

Riso

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

common-mode voltage control.• Do not terminate the output unless required. Many

open-loop, class-A amplifiers require 50-Ωtermination for proper operation, but closed-loopfully differential amplifiers drive a specific outputvoltage regardless of the load impedance present.Terminating the output of a fully differentialamplifier with a heavy load adversely effects theamplifier's linearity.

• Comprehend the VOCM input drive requirements.Determine if the ADC's voltage reference canprovide the required amount of current to moveVOCM to the desired value. A buffer may beneeded.

• Decouple the VOCM pin to eliminate the antennaeffect. VOCM is a high-impedance node that can

Figure 97.act as an antenna. A large decoupling capacitoron this node eliminates this problem.

• Be cognizant of the input common-mode range. Ifthe input signal is referenced around the negativepower supply rail (e.g., around ground on a single5 V supply), then the THS4500/1 accommodatesthe input signal. If the input signal is referencedaround midrail, choose the THS4502/3 for thebest operation.

• Packaging makes a difference at higherfrequencies. If possible, choose the smaller,thermally enhanced MSOP package for the bestperformance. As a rule, lower junctiontemperatures provide better performance. Ifpossible, use a thermally enhanced package,even if the power dissipation is relatively smallcompared to the maximum power dissipationrating to achieve the best results.

Figure 98.• Comprehend the effect of the load impedanceseen by the fully differential amplifier whenperforming system-level intercept point FULLY DIFFERENTIAL LINE DRIVERScalculations. Lighter loads (such as thosepresented by an ADC) allow smaller intercept The THS4500 family of amplifiers can be used aspoints to support the same level of intermodulation high-frequency, high-swing differential line drivers.distortion performance. Their high power supply voltage rating (16.5 V

absolute maximum) allows operation on a single 12-Vor a single 15-V supply. The high supply voltage,EXAMPLE ANALOG-TO-DIGITALcoupled with the ability to provide differential outputsCONVERTER DRIVER CIRCUITSenables the ability to drive 26 VPP into reasonably

The THS4500 family of devices is designed to drive heavy loads (250 Ω or greater). The circuit inhigh-performance ADCs with extremely high linearity, Figure 99 illustrates the THS4500 family of devicesallowing for the maximum effective number of bits at used as high speed line drivers. For line driverthe output of the data converter. Two representative applications, close attention must be paid to thermalcircuits shown below highlight single-supply operation design constraints due to the typically high level ofand split supply operation. Specific feedback resistor, power dissipation.gain resistor, and feedback capacitor values are notspecified, as their values depend on the frequency ofinterest. Information on calculating these values canbe found in the applications material above.

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VOCM

15 VVS

RS Rg Rf

Rf

+

-

RT

-

+

Rg

CG

0.1 µF

CG

THS4500/2 VDD

CS

CS

RL

VOD = 26 VPP

Riso

Riso

Fully Differential Line Driver With High Output Swing

R = 50 kΩ

R = 50 kΩ

VS+

VS-

VOCM

IIN

IIN =2 VOCM - VS+ - VS-

R

Equivalent Input Circuit for VOCM

VS

RS Rg1 Rf1

Rf2

+

-

RT

-

+VO

Riso

C

CF2

CF1

Rg2 Riso

A Two-Pole, Low-Pass Filter Design Using a FullyDifferential Amplifier With Poles Located at:P1 = (2πRfCF)-1 in Hz and P2 = (4πRisoC)-1 in Hz

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

SETTING THE OUTPUT COMMON-MODEVOLTAGE WITH THE VOCM INPUT

The output common-mode voltage pin provides acritical function to the fully differential amplifier; itaccepts an input voltage and reproduces that inputvoltage as the output common-mode voltage. In otherwords, the VOCM input provides the ability to level-shiftthe outputs to any voltage inside the output voltageswing of the amplifier.

A description of the input circuitry of the VOCM pin isshown below to facilitate an easier understanding ofthe VOCM interface requirements. The VOCM pin hasFigure 99.two 50-kΩ resistors between the power supply rails toset the default output common-mode voltage tomidrail. A voltage applied to the VOCM pin alters theFiltering With Fully Differential Amplifiersoutput common-mode voltage as long as the source

Similar to their single-ended counterparts, fully has the ability to provide enough current to overdrivedifferential amplifiers have the ability to couple the two 50-kΩ resistors. This phenomenon isfiltering functionality with voltage gain. Numerous filter depicted in the VOCM equivalent circuit diagram. Thetopologies can be based on fully differential table contains some representative examples to aid inamplifiers. Several of these are outlined in A determining the current drive requirement for theDifferential Circuit Collection, (literature number VOCM voltage source. This parameter is especiallySLOA064) referenced at the end of this data sheet. important when using the reference voltage of anThe circuit below depicts a simple two-pole low-pass analog-to-digital converter to drive VOCM. Outputfilter applicable to many different types of systems. current drive capabilities differ from part to part, so aThe first pole is set by the resistors and capacitors in voltage buffer may be necessary in somethe feedback paths, and the second pole is set by the applications.isolation resistors and the capacitor across theoutputs of the isolation resistors.

Figure 101.

By design, the input signal applied to the VOCM pinpropagates to the outputs as a common-mode signal.As shown in the equivalent circuit diagram, the VOCMinput has a high impedance associated with it,dictated by the two 50-kΩ resistors. While the highFigure 100.impedance allows for relaxed drive requirements, italso allows the pin and any associated printed-circuit

Often times, filters like these are used to eliminate board traces to act as an antenna. For this reason, abroadband noise and out-of-band distortion products decoupling capacitor is recommended on this nodein signal acquisition systems. It should be noted that for the sole purpose of filtering any high frequencythe increased load placed on the output of the noise that could couple into the signal path throughamplifier by the second low-pass filter has a the VOCM circuitry. A 0.1-µF or 1-µF capacitance is adetrimental effect on the distortion performance. The reasonable value for eliminating a great deal ofpreferred method of filtering is using the feedback broadband interference, but additional, tunednetwork, as the typically smaller capacitances decoupling capacitors should be considered if arequired at these points in the circuit do not load theamplifier nearly as heavily in the pass-band.

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VOCM = 2.5 V

5 VVS

RS Rg1

Rg2

Rf1

Rf2

+

-

RT

-+

RL

2.5-V DC

2.5-V DC

DC Current Path to Ground

DC Current Path to Ground

I2 =VOCM

Rf2 + Rg2

Depiction of DC Power Dissipation Caused ByOutput Level-Shifting in a DC-Coupled Circuit

I1 =VOCM

Rf1+ Rg1 + RS || RT

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

specific source of electromagnetic or radio frequency operation. To turn off the amplifier in an effort tointerference is present elsewhere in the system. conserve power, the power-down pin can be drivenInformation on the ac performance (bandwidth, slew towards the negative rail. The threshold voltages forrate) of the VOCM circuitry is included in the power-on and power-down are relative to the supplyspecification table and graph section. rails and given in the specification tables. Above the

enable threshold voltage, the device is on. Below theSince the VOCM pin provides the ability to set an disable threshold voltage, the device is off. Behavioroutput common-mode voltage, the ability for in between these threshold voltages is not specified.increased power dissipation exists. While this doesnot pose a performance problem for the amplifier, it Note that this power-down functionality is just that;can cause additional power dissipation of which the the amplifier consumes less power in power-downsystem designer should be aware. The circuit shown mode. The power-down mode is not intended toin Figure 102 demonstrates an example of this provide a high-impedance output. In other words, thephenomenon. For a device operating on a single 5-V power-down functionality is not intended to allow usesupply with an input signal referenced around ground as a 3-state bus driver. When in power-down mode,and an output common-mode voltage of 2.5 V, a dc the impedance looking back into the output of thepotential exists between the outputs and the inputs of amplifier is dominated by the feedback and gainthe device. The amplifier sources current into the setting resistors.feedback network in order to provide the circuit with

The time delays associated with turning the device onthe proper operating point. While there are no seriousand off are specified as the time it takes for theeffects on the circuit performance, the extra poweramplifier to reach 50% of the nominal quiescentdissipation may need to be included in the system'scurrent. The time delays are on the order ofpower budget.microseconds because the amplifier moves in and outof the linear mode of operation in these transitions.

LINEARITY; DEFINITIIONS, TERMINOLOGY,CIRCUIT TECHNIQUES, AND DESIGNTRADEOFFS

The THS4500 family of devices featuresunprecedented distortion performance for monolithicfully differential amplifiers. This section focuses onthe fundamentals of distortion, circuit techniques forreducing nonlinearity, and methods for equatingdistortion of fully differential amplifiers to desiredlinearity specifications in RF receiver chains.

Amplifiers are generally thought of aslinear devices.In other words, the output of an amplifier is a linearlyscaled version of the input signal applied to it. Inreality, however, amplifier transfer functions arenonlinear. Minimizing amplifier nonlinearity is aprimary design goal in many applications.

Figure 102. Intercept points are specifications that have longbeen used as key design criteria in the RFcommunications world as a metric for the

SAVING POWER WITH POWER-DOWN intermodulation distortion performance of a device inFUNCTIONALITY the signal chain (e.g., amplifiers, mixers, etc.). Use of

the intercept point, rather than strictly theThe THS4500 family of fully differential amplifiersintermodulation distortion, allows for simplercontains devices that come with and without thesystem-level calculations. Intercept points, like noisepower-down option. Even-numbered devices havefigures, can be easily cascaded back and forthpower-down capability, which is described in detailthrough a signal chain to determine the overallhere.receiver chain's intermodulation distortion

The power-down pin of the amplifiers defaults to the performance. The relationship betweenpositive supply voltage in the absence of an applied intermodulation distortion and intercept point isvoltage (i.e. an internal pullup resistor is present), depicted in Figure 103 and Figure 104.putting the amplifier in the power-on mode of

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IMD3 = PS - PO

PS

POPO

∆fc = fc - f1

∆fc = f2 - fc

PS

fc - 3∆f f1 fc f2 fc + 3∆f

Po

wer

f - Frequency - MHz

OIP3 PO IMD3

2 where

PO 10 log V2Pdiff

2RL 0.001

(10)

(11)

IMD3

OIP3

IIP3

3X

PIN

(dBm)

1X

POUT

(dBm)

PO

PS

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

However, with a fully differential amplifier, the outputdoes not require termination as an RF amplifierwould. Because closed-loop amplifiers deliver signalsto their outputs regardless of the impedance present,it is important to comprehend this when evaluatingthe intercept point of a fully differential amplifier. TheTHS4500 series of devices yields optimum distortionperformance when loaded with 200 Ω to 1 kΩ, verysimilar to the input impedance of an analog-to-digitalconverter over its input frequency band. As a result,terminating the input of the ADC to 50 Ω can actuallybe detrimental to system performance.

This discontinuity between open-loop, class-Aamplifiers and closed-loop, class-AB amplifiersbecomes apparent when comparing the interceptpoints of the two types of devices. Equation 10 givesthe definition of an intercept point, relative to theintermodulation distortion.

Figure 103.

NOTEPo is the output power of asingle tone, RL is thedifferential load resistance, andVP(diff) is the differential peakvoltage for a single tone.

As can be seen in the equation, when a higherimpedance is used, the same level of intermodulationdistortion performance results in a lower interceptpoint. Therefore, it is important to comprehend theimpedance seen by the output of the fully differentialamplifier when selecting a minimum intercept point.The graphic below shows the relationship betweenthe strict definition of an intercept point with aFigure 104.normalized, or equivalent, intercept point for theTHS4502.

Due to the intercept point's ease of use in systemlevel calculations for receiver chains, it has becomethe specification of choice for guidingdistortion-related design decisions. Traditionally,these systems use primarily class-A, single-ended RFamplifiers as gain blocks. These RF amplifiers aretypically designed to operate in a 50-Ω environment,just like the rest of the receiver chain. Since interceptpoints are given in dBm, this implies an associatedimpedance (50 Ω).

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40

30

20

150 10 20 30 40 50 60

50

55

f - Frequency - MHz

THIRD-ORDER OUTPUT INTERCEPT POINTvs

FREQUENCY60

70 80 90 100

45

35

25

Normalized to 200 Ω

Gain = 1Rf = 392 ΩVS = ± 5 VTone Spacing = 200 kHz

OIP3 RL= 800 Ω

Normalized to 50 Ω

- T

hir

d-O

rder

Ou

tpu

t In

terc

ept

Po

int

- d

Bm

OIP

3Ni NA

Rg Rfeg ef

es

Rs

en

No

ini

ii i

Rt

et

Ni

Si

No

So

+

-

fully-diff

amp

Rg Rfeg ef

Rg

Rf

Rg

Rg RsRt

2RsRt

2

(eni)2

(ini)2

(iii)2

4kTRt

2RsRGRs2Rg

Rt 2RsRg

Rs2Rg

2

4kTRf 2 Rg

Rf2

4kTRg 2

Rg

Rg RsRt

2RsRt

2

NA: Fully Differential Amplifier

NoiseSource Scale Factor

(12)

(13)

(14)

(15)

(16)

(17)

Rg2

Rg2

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

Figure 105.Figure 106. Noise Sources in a Fully Differential

Amplifier CircuitComparing specifications between different devicetypes becomes easier when a common impedancelevel is assumed. For this reason, the intercept pointson the THS4500 family of devices are reportednormalized to a 50-Ω load impedance.

AN ANALYSIS OF NOICE IN FULLYDIFFERENTIAL AMPLIFIERS

Noise analysis in fully differential amplifiers isanalogous to noise analysis in single-endedamplifiers. The same concepts apply. Below, ageneric circuit diagram consisting of a voltage source,a termination resistor, two gain setting resistors, twofeedback resistors, and a fully differential amplifier isshown, including all the relevant noise sources. Fromthis circuit, the noise factor (F) and noise figure (NF)are calculated. The figures indicate the appropriatescaling factor for each of the noise sources in twodifferent cases. The first case includes thetermination resistor, and the second, simplified caseassumes that the voltage source is properlyterminated by the gain-setting resistors. With thesescaling factors, the amplifier's input noise power (NA)can be calculated by summing each individual noisesource with its scaling factor. The noise delivered tothe amplifier by the source (NI) and input noise powerare used to calculate the noise factor and noise figureas shown in equations 23 through 27.

Figure 107. Scaling Factors for Individual NoiseSources Assuming a Finite Value Termination

Resistor

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Rg

Rf

Rg

Rg Rs

2

2

(eni)2

(ini)2

(iii)2

2 Rg

Rf2

4kTRg 2

Rg

Rg Rs2

2

NA: Fully Differential Amplifier; termination = 2Rg

NoiseSource Scale Factor

4kTRf

(18)

(19)

(20)

(21)

(22)

Rg2

Rg2

Ni 4kTRs

2RtRg

Rt2Rg

Rs2RtRg

Rt2Rg

2

(23)

Ni 4kTRs 2Rg

Rs 2Rg

2

(24)

NA Noise Source Scale Factor

F 1 NA

NI

NF 10 log (F)

(25)

(26)

(27)

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

PRINTED-CIRCUIT BOARD LAYOUTTECHNIQUES FOR OPTIMALPERFORMANCE

Achieving optimum performance with high frequencyamplifier-like devices in the THS4500 family requirescareful attention to board layout parasitic and externalcomponent types.

Recommendations that optimize performance include:• Minimize parasitic capacitance to any ac ground

for all of the signal I/O pins. Parasitic capacitanceon the output and input pins can cause instability.To reduce unwanted capacitance, a windowaround the signal I/O pins should be opened in allof the ground and power planes around thosepins. Otherwise, ground and power planes shouldbe unbroken elsewhere on the board.

• Minimize the distance (< 0.25”) from the powersupply pins to high frequency 0.1-µF decouplingcapacitors. At the device pins, the ground andpower plane layout should not be in closeFigure 108. Scaling Factors for Individual Noiseproximity to the signal I/O pins. Avoid narrowSources Assuming No termination Resistance ispower and ground traces to minimize inductanceUsed (e.g., RT is open)between the pins and the decoupling capacitors.The power supply connections should always bedecoupled with these capacitors. Larger (6.8 µF ormore) tantalum decoupling capacitors, effective atlower frequency, should also be used on the mainsupply pins. These may be placed somewhatfarther from the device and may be shared amongseveral devices in the same area of the PC board.The primary goal is to minimize the impedanceseen in the differential-current return paths.Figure 109. Input Noise With a Termination

• Careful selection and placement of externalResistorcomponents preserve the high frequencyperformance of the THS4500 family. Resistorsshould be a very low reactance type.Surface-mount resistors work best and allow atighter overall layout. Metal-film and carboncomposition, axially-leaded resistors can alsoFigure 110. Input Noise Assuming Noprovide good high frequency performance. Again,Termination Resistorkeep their leads and PC board trace length asshort as possible. Never use wirewound typeresistors in a high frequency application. Since theoutput pin and inverting input pins are the mostsensitive to parasitic capacitance, always positionthe feedback and series output resistors, if any, asclose as possible to the inverting input pins andoutput pins. Other network components, such as

Figure 111. Noise Factor and Noise Figure input termination resistors, should be placed closeCalculations to the gain-setting resistors. Even with a low

parasitic capacitance shunting the externalresistors, excessively high resistor values cancreate significant time constants that can degradeperformance. Good axial metal-film orsurface-mount resistors have approximately0.2 pF in shunt with the resistor. For resistorvalues > 2.0 kΩ, this parasitic capacitance canadd a pole and/or a zero below 400 MHz that can

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DIE

Side View (a)

DIE

End View (b)

ThermalPad

Bottom View (c)

0.060

0.040

0.075 0.025

0.205

0.010vias

Pin 1

Top View

0.017

0.035

0.0940.030

0.013

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

effect circuit operation. Keep resistor values as PowerPAD DESIGN CONSIDERATIONSlow as possible, consistent with load driving

The THS4500 family is available in aconsiderations.thermally-enhanced PowerPAD family of packages.

• Connections to other wideband devices on the These packages are constructed using a downsetboard may be made with short direct traces or leadframe upon which the die is mounted [seethrough onboard transmission lines. For short Figure 112(a) and Figure 112(b)]. This arrangementconnections, consider the trace and the input to results in the lead frame being exposed as a thermalthe next device as a lumped capacitive load. pad on the underside of the package [seeRelatively wide traces (50 mils to 100 mils) should Figure 112(c)]. Because this thermal pad has directbe used, preferably with ground and power planes thermal contact with the die, excellent thermalopened up around them. Estimate the total performance can be achieved by providing a goodcapacitive load and determine if isolation resistors thermal path away from the thermal pad.on the outputs are necessary. Low parasitic

The PowerPAD package allows for both assemblycapacitive loads (< 4 pF) may not need an RSand thermal management in one manufacturingsince the THS4500 family is nominallyoperation. During the surface-mount solder operationcompensated to operate with a 2-pF parasitic(when the leads are being soldered), the thermal padload. Higher parasitic capacitive loads without ancan also be soldered to a copper area underneath theRS are allowed as the signal gain increasespackage. Through the use of thermal paths within this(increasing the unloaded phase margin). If a longcopper area, heat can be conducted away from thetrace is required, and the 6-dB signal loss intrinsicpackage into either a ground plane or other heatto a doubly-terminated transmission line isdissipating device.acceptable, implement a matched impedance

transmission line using microstrip or stripline The PowerPAD package represents a breakthroughtechniques (consult an ECL design handbook for in combining the small area and ease of assembly ofmicrostrip and stripline layout techniques). surface mount with the, heretofore, awkward

• A 50-Ω environment is normally not necessary mechanical methods of heatsinking.onboard, and in fact, a higher impedanceenvironment improves distortion as shown in thedistortion versus load plots. With a characteristicboard trace impedance defined based on boardmaterial and trace dimensions, a matching seriesresistor into the trace from the output of theTHS4500 family is used as well as a terminatingshunt resistor at the input of the destinationdevice. Figure 112. Views of Thermally

• Remember also that the terminating impedance is Enhanced Packagethe parallel combination of the shunt resistor andthe input impedance of the destination device: this

Although there are many ways to properly heatsinktotal effective impedance should be set to matchthe PowerPAD package, the following steps illustratethe trace impedance. If the 6-dB attenuation of athe recommended approach.doubly terminated transmission line is

unacceptable, a long trace can beseries-terminated at the source end only. Treatthe trace as a capacitive load in this case. Thisdoes not preserve signal integrity as well as adoubly-terminated line. If the input impedance ofthe destination device is low, there is some signalattenuation due to the voltage divider formed bythe series output into the terminating impedance.

• Socketing a high speed part like the THS4500family is not recommended. The additional leadlength and pin-to-pin capacitance introduced bythe socket can create an extremely troublesomeparasitic network which can make it almostimpossible to achieve a smooth, stable frequencyresponse. Best results are obtained by solderingthe THS4500 family parts directly onto the board.

Figure 113. PowerPAD PCB Etch and Via Pattern

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 31

Product Folder Link(s): THS4502 THS4503

Page 32: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

PDmaxTmax–TA

JA

Where:PDmax is the maximum power dissipation in the amplifier (W).Tmax is the absolute maximum junction temperature (°C).TA is the ambient temperature (°C).θJA = θJC + θCAθJC is the thermal coefficient from the silicon junctions to thecase (°C/W).θCA is the thermal coefficient from the case to ambient air(°C/W).

(28)

2

1.5

1

0

-40 -20 0 20

- M

axim

um

Pow

er

Dis

sip

ation -

W

2.5

3

3.5

40 60 80

TA - Ambient T emperature - °C

PD

8-Pin DGN Package

θJA = 170°C/W for 8-Pin SOIC (D)

θJA = 58.4°C/W for 8-Pin MSOP (DGN)

ΤJ = 150°C, No Airflow

0.5

8-Pin D Package

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

PowerPAD PCB LAYOUT CONSIDERATIONS maximum junction temperature of 150°C is exceeded.For best performance, design for a maximum junction1. Prepare the PCB with a top side etch pattern astemperature of 125°C. Between 125°C and 150°C,shown in Figure 113. There should be etch fordamage does not occur, but the performance of thethe leads as well as etch for the thermal pad.amplifier begins to degrade.

2. Place five holes in the area of the thermal pad.The thermal characteristics of the device are dictatedThese holes should be 13 mils in diameter. Keepby the package and the PC board. Maximum powerthem small so that solder wicking through thedissipation for a given package can be calculatedholes is not a problem during reflow.using the following formula.3. Additional vias may be placed anywhere along

the thermal plane outside of the thermal padarea. This helps dissipate the heat generated bythe THS4500 family IC. These additional viasmay be larger than the 13-mil diameter viasdirectly under the thermal pad. They can belarger because they are not in the thermal padarea to be soldered so that wicking is not aproblem.

4. Connect all holes to the internal ground plane.5. When connecting these holes to the ground

plane, do not use the typical web or spoke viaconnection methodology. Web connections have For systems where heat dissipation is more critical,a high thermal resistance connection that is the THS4500 family of devices is offered in an 8-pinuseful for slowing the heat transfer during MSOP with PowerPAD. The thermal coefficient forsoldering operations. This makes the soldering of the MSOP PowerPAD package is substantiallyvias that have plane connections easier. In this improved over the traditional SOIC. Maximum powerapplication, however, low thermal resistance is dissipation levels are depicted in the graph for thedesired for the most efficient heat transfer. two packages. The data for the DGN packageTherefore, the holes under the THS4500 family assumes a board layout that follows the PowerPADPowerPAD package should make their layout guidelines referenced above and detailed inconnection to the internal ground plane with a the PowerPAD application notes in the Additionalcomplete connection around the entire Reference Materialsection at the end of the datacircumference of the plated-through hole. sheet.

6. The top-side solder mask should leave theterminals of the package and the thermal padarea with its five holes exposed. The bottom-sidesolder mask should cover the five holes of thethermal pad area. This prevents solder frombeing pulled away from the thermal pad areaduring the reflow process.

7. Apply solder paste to the exposed thermal padarea and all of the IC terminals.

8. With these preparatory steps in place, the IC issimply placed in position and run through thesolder reflow operation as any standardsurface-mount component. This results in a partthat is properly installed.

Power Dissipation and ThermalConsiderations

Figure 114. Maximum Power DissipationThe THS4500 family of devices does not incorporate vs Ambient Temperatureautomatic thermal shutoff protection, so the designermust take care to ensure that the design does not When determining whether or not the device satisfiesviolate the absolute maximum junction temperature of the maximum power dissipation requirement, it isthe device. Failure may result if the absolute important to not only consider quiescent power

32 Submit Documentation Feedback Copyright © 2002–2011, Texas Instruments Incorporated

Product Folder Link(s): THS4502 THS4503

Page 33: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

VS

RS Rg

Rf

Rf

+

-RT

-

+

Riso

CL

Rg

Riso = 10 - 25 Ω

VS

-VS

Riso

Use of Isolation Resistors With a Capacitive Load.

_

+

4

5

37

26

VOCM-VS

PwrPad

VSPD

1

8

R0805

R4

C4C0805

R5 R0805

C3

C0805

R6

R7

R0805

R0805

C5

C6

C0805

C0805

C7C0805

J2

J3

J2

J3

R2

R0805

R3

R0805

C1

C0805C2

C0805

R1R1206

J1

3

1

4

5

6

R11R1206

R9R0805

R8

R9

R0805

R0805

J2

J3

J4

T1

U1THS450X

Simplified Schematic of the Evaluation Board. PowerSupply Decoupling, VOCM, and Power Down CircuitryNot Shown

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

dissipation, but also dynamic power dissipation. Often high frequency return currents, but often is nottimes, this is difficult to quantify because the signal required.pattern is inconsistent, but an estimate of the RMSpower dissipation can provide visibility into a possible EVALUATION FIXTURES, SPICE MODELS,problem. AND APPLICTIONS SUPPORT

Texas Instruments is committed to providing itsDRIVING CAPACITIVE LOADScustomers with the highest quality of applications

High-speed amplifiers are typically not well-suited for support. To support this goal, an evaluation boarddriving large capacitive loads. If necessary, however, has been developed for the THS4500 family of fullythe load capacitance should be isolated by two differential amplifiers. The evaluation board can beisolation resistors in series with the output. The obtained by ordering through the Texas Instrumentsrequisite isolation resistor size depends on the value web site, www.ti.com, or through your local Texasof the capacitance, but 10 to 25Ω is a good place to Instruments sales representative. Schematic for thebegin the optimization process. Larger isolation evaluation board is shown below with their defaultresistors decrease the amount of peaking in the component values. Unpopulated footprints are shownfrequency response induced by the capacitive load, to provide insight into design flexibility.but this comes at the expense of larger voltage dropacross the resistors, increasing the output swingrequirements of the system.

Figure 115.

POWER SUPPLY DECOUPLING Figure 116.TECHNIQUES AND RECOMMENDATIONS

Power supply decoupling is a critical aspect of any Computer simulation of circuit performance usinghigh-performance amplifier design process. Careful SPICE is often useful when analyzing thedecoupling provides higher quality ac performance performance of analog circuits and systems. This is(most notably improved distortion performance). The particularly true for video and RF amplifier circuitsfollowing guidelines ensure the highest level of where parasitic capacitance and inductance can haveperformance. a major effect on circuit performance. A SPICE model1. Place decoupling capacitors as close to the for the THS4500 family of devices is available

power supply inputs as possible, with the goal of through the Texas Instruments web site (www.ti.com).minimizing the inductance of the path from The PIC is also available for design assistance andground to the power supply. detailed product information. These models do a

good job of predicting small-signal ac and transient2. Placement priority should be as follows: smallerperformance under a wide variety of operatingcapacitors should be closer to the device.conditions. They are not intended to model the

3. Use of solid power and ground planes is distortion characteristics of the amplifier, nor do theyrecommended to reduce the inductance along attempt to distinguish between the package types inpower supply return current paths. their small-signal ac performance. Detailed

4. Recommended values for power supply information about what is and is not modeled isdecoupling include 10-µF and 0.1-µF capacitors contained in the model file itself.for each supply. A 1000-pF capacitor can beused across the supplies as well for extremely

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 33

Product Folder Link(s): THS4502 THS4503

Page 34: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

THS4502THS4503SLOS352E –APRIL 2002–REVISED OCTOBER 2011 www.ti.com

ADDITIONAL REFERENCE MATERIAL• PowerPAD Made Easy, application brief, Texas Instruments Literature Number SLMA004.• PowerPAD Thermally Enhanced Package, technical brief, Texas Instruments Literature Number SLMA002.• Karki, James. Fully Differential Amplifiers.application report, Texas Instruments Literature Number

SLOA054D.• Karki, James. Fully Differential Amplifiers Applications: Line Termination, Driving High-Speed ADCs, and

Differential Transmission Lines. Texas Instruments Analog Applications Journal, February 2001.• Carter, Bruce. A Differential Op-Amp Circuit Collection. application report, Texas Instruments Literature

Number SLOA064.• Carter, Bruce. Differential Op-Amp Single-Supply Design Technique, application report, Texas Instruments

Literature Number SLOA072.• Karki, James. Designing for Low Distortion with High-Speed Op Amps. Texas Instruments Analog

Applications Journal, July 2001.

34 Submit Documentation Feedback Copyright © 2002–2011, Texas Instruments Incorporated

Product Folder Link(s): THS4502 THS4503

Page 35: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

THS4502THS4503

www.ti.com SLOS352E –APRIL 2002–REVISED OCTOBER 2011

REVISION HISTORY

Changes from Revision D (January 2004) to Revision E Page

• Added WARNING to DESCRIPTION ................................................................................................................................... 1

• Added Maximum junction temperature to prevent oscillation, TJ and footnote to ABSOLUTE MAXIMUM RATINGS ........ 3

• Deleted power rating and footnote from PACKAGE DISSIPATION RATINGS .................................................................... 3

• Added MAXIMUM DIE TEMPERATURE TO PREVENT OSCILLATION section .............................................................. 21

Copyright © 2002–2011, Texas Instruments Incorporated Submit Documentation Feedback 35

Product Folder Link(s): THS4502 THS4503

Page 36: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

PACKAGE OPTION ADDENDUM

www.ti.com 7-Nov-2014

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

THS4502CD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 4502C

THS4502CDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 4502C

THS4502CDGN ACTIVE MSOP-PowerPAD

DGN 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 BCG

THS4502CDGNG4 ACTIVE MSOP-PowerPAD

DGN 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 BCG

THS4502CDGNR ACTIVE MSOP-PowerPAD

DGN 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 BCG

THS4502ID ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 4502I

THS4502IDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 4502I

THS4502IDGK ACTIVE VSSOP DGK 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 ASX

THS4502IDGN ACTIVE MSOP-PowerPAD

DGN 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 BCI

THS4502IDGNR ACTIVE MSOP-PowerPAD

DGN 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 BCI

THS4502IDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 4502I

THS4503CD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 4503C

THS4503CDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 4503C

THS4503CDGK ACTIVE VSSOP DGK 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 ATY

THS4503CDGN ACTIVE MSOP-PowerPAD

DGN 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 BCK

THS4503CDGNG4 ACTIVE MSOP-PowerPAD

DGN 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 BCK

THS4503CDGNR ACTIVE MSOP-PowerPAD

DGN 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 BCK

Page 37: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

PACKAGE OPTION ADDENDUM

www.ti.com 7-Nov-2014

Addendum-Page 2

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

THS4503CDGNRG4 ACTIVE MSOP-PowerPAD

DGN 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM 0 to 70 BCK

THS4503ID ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 4503I

THS4503IDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 4503I

THS4503IDGK ACTIVE VSSOP DGK 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 ASY

THS4503IDGN ACTIVE MSOP-PowerPAD

DGN 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 BCL

THS4503IDGNG4 ACTIVE MSOP-PowerPAD

DGN 8 80 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 BCL

THS4503IDGNR ACTIVE MSOP-PowerPAD

DGN 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 85 BCL

THS4503IDGNRG4 ACTIVE MSOP-PowerPAD

DGN 8 TBD Call TI Call TI -40 to 85

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

Page 38: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

PACKAGE OPTION ADDENDUM

www.ti.com 7-Nov-2014

Addendum-Page 3

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF THS4503 :

• Enhanced Product: THS4503-EP

NOTE: Qualified Version Definitions:

• Enhanced Product - Supports Defense, Aerospace and Medical Applications

Page 39: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

THS4502CDGNR MSOP-Power PAD

DGN 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

THS4502IDGNR MSOP-Power PAD

DGN 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

THS4502IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

THS4503CDGNR MSOP-Power PAD

DGN 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

THS4503IDGNR MSOP-Power PAD

DGN 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 18-Aug-2014

Pack Materials-Page 1

Page 40: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

THS4502CDGNR MSOP-PowerPAD DGN 8 2500 358.0 335.0 35.0

THS4502IDGNR MSOP-PowerPAD DGN 8 2500 358.0 335.0 35.0

THS4502IDR SOIC D 8 2500 367.0 367.0 35.0

THS4503CDGNR MSOP-PowerPAD DGN 8 2500 358.0 335.0 35.0

THS4503IDGNR MSOP-PowerPAD DGN 8 2500 358.0 335.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 18-Aug-2014

Pack Materials-Page 2

Page 41: Wideband, Low-Distortion Fully Differential Amplifiers. (Rev. E)
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IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and otherchanges to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latestissue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current andcomplete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of salesupplied at the time of order acknowledgment.TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s termsand conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessaryto support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarilyperformed.TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products andapplications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provideadequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, orother intellectual property right relating to any combination, machine, or process in which TI components or services are used. Informationpublished by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty orendorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of thethird party, or a license from TI under the patents or other intellectual property of TI.Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alterationand is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altereddocumentation. Information of third parties may be subject to additional restrictions.Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or servicevoids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.TI is not responsible or liable for any such statements.Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirementsconcerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or supportthat may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards whichanticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might causeharm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the useof any TI components in safety-critical applications.In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is tohelp enable customers to design and create their own end-product solutions that meet applicable functional safety standards andrequirements. Nonetheless, such components are subject to these terms.No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the partieshave executed a special agreement specifically governing such use.Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use inmilitary/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI componentswhich have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal andregulatory requirements in connection with such use.TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use ofnon-designated products, TI will not be responsible for any failure to meet ISO/TS16949.Products ApplicationsAudio www.ti.com/audio Automotive and Transportation www.ti.com/automotiveAmplifiers amplifier.ti.com Communications and Telecom www.ti.com/communicationsData Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computersDLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-appsDSP dsp.ti.com Energy and Lighting www.ti.com/energyClocks and Timers www.ti.com/clocks Industrial www.ti.com/industrialInterface interface.ti.com Medical www.ti.com/medicalLogic logic.ti.com Security www.ti.com/securityPower Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defenseMicrocontrollers microcontroller.ti.com Video and Imaging www.ti.com/videoRFID www.ti-rfid.comOMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.comWireless Connectivity www.ti.com/wirelessconnectivity

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