Application Note Revision 1.0
www.infineon.com 2016-02-03
AN470
Wideband SP3T RF Switch for RF diversity or RF
band selection applications
BGS13S2N9
About this document
Scope and purpose
This application note describes Infineon’s Wideband SP3T RF Switch for RF diversity or RF band selection
applications: BGS13S2N9 as switch for Mobile phones in different RF FE applications such as diversity or band selection switch.
1. This application note documents the behavior of BGS13S2N9 for different LTE bands (Band 1, 2, 3, 4, 5,
7, 12, 13, 17, 20, 25 and Band 30). 2. The BGS13S2N9 is used in this document.
3. General purpose wideband Rf switch for diversity application or as band selection switch.
4. Key Parameters:
3 high-linearity TRx paths with power handling capability of up to 30 dBm
Low insertion loss
Low harmonic generation
High port-to-port-isolation
Suitable for Edge / CDMA2000 / LTE / WCDMA applications
Application Note 2 Revision 1.0
2016-02-03
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table of Contents
Table of Contents
About this document ....................................................................................................................... 1
Table of Contents ........................................................................................................................... 2
List of Figures1 ................................................................................................................................ 3
List of Tables .................................................................................................................................. 5
1 Introduction .................................................................................................................. 6
2 BGS13S2N9 Features ...................................................................................................... 9
2.1 Main Features .......................................................................................................................................... 9
2.2 Functional Diagram ................................................................................................................................. 9 2.3 Signal Description ................................................................................................................................. 10
3 Application Circuit and Performance Overview ................................................................ 11 3.1 Summary of Measurement Results ....................................................................................................... 11
3.2 Insertion Loss ........................................................................................................................................ 12 3.3 Antenna Return Loss ............................................................................................................................. 13
3.4 Port Return Loss .................................................................................................................................... 14
3.5 Isolation Antenna to Port ...................................................................................................................... 15 3.6 Isolation Port to Port ............................................................................................................................. 16
4 Switching time ............................................................................................................. 19 4.1 Measurement Specifications ................................................................................................................ 19 4.2 Measurement Setup .............................................................................................................................. 20
4.3 Measurement results ............................................................................................................................. 20
5 Intermodulation ........................................................................................................... 22
5.1 Test conditions ...................................................................................................................................... 23
5.2 Measurement Setup .............................................................................................................................. 24 5.3 Measurement Results ............................................................................................................................ 25
6 Harmonic Generation .................................................................................................... 61
6.1 Measurement Setup .............................................................................................................................. 61 6.2 Measurement results ............................................................................................................................. 62 6.2.1 Harmonics for Band 1 ...................................................................................................................... 62
6.2.2 Harmonics for Band 2 ...................................................................................................................... 63
6.2.3 Harmonics for Band 3 ...................................................................................................................... 65 6.2.4 Harmonics for Band 4 ...................................................................................................................... 67 6.2.5 Harmonics for Band 5 ...................................................................................................................... 68 6.2.6 Harmonics for Band 7 ...................................................................................................................... 69
6.2.7 Harmonics for Band 12 .................................................................................................................... 70
6.2.8 Harmonics for Band 13 .................................................................................................................... 71
6.2.9 Harmonics for Band 17 .................................................................................................................... 72 6.2.10 Harmonics for Band 20 .................................................................................................................... 73 6.2.11 Harmonics for Band 25 .................................................................................................................... 74
6.2.12 Harmonics for Band 30 .................................................................................................................... 75
7 Evaluation Board and Layout Information ....................................................................... 76
7.1 Evaluation Board ................................................................................................................................... 76 7.2 Measurement description and deembedding ...................................................................................... 77
8 Authors ........................................................................................................................ 78
Revision History ............................................................................................................................ 79
Application Note 3 Revision 1.0
2016-02-03
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
List of figures
List of Figures1
Figure 1 Excample of TD-LTE band for diversity path ...................................................................................... 6 Figure 2 BGS13S2N9 package ........................................................................................................................... 9 Figure 3 Equivalent Circuit Block diagram of BGS13S2N9 ............................................................................... 9 Figure 4 Package and pin connections (top view) of BGS13S2N9 ................................................................. 10
Figure 5 Insertion Loss in dB up to 3GHz ........................................................................................................ 12
Figure 6 RF matching @ Ant Port in dB ........................................................................................................... 13 Figure 7 RF matching @ RFx Ports in dB ......................................................................................................... 14 Figure 8 Isolation Antenna to Port in dB ........................................................................................................ 15 Figure 9 Isolation Port to Port with RF1 active in dB ..................................................................................... 16
Figure 10 Isolation Port to Port with RF2 active in dB ..................................................................................... 17 Figure 11 Isolation Port to Port with RF3 active in dB ..................................................................................... 18
Figure 12 Switching Time .................................................................................................................................. 19 Figure 13 Rise/Fall Time .................................................................................................................................... 19 Figure 14 Measurement setup .......................................................................................................................... 20
Figure 15 Screenshots of switching times ........................................................................................................ 21 Figure 16 Representation of IMD products ....................................................................................................... 22 Figure 17 Block diagram of RF Switch intermodulation .................................................................................. 23
Figure 18 Block diagram of RF Switch intermodulation .................................................................................. 24
Figure 19 IMD products of Band 1 LTE and Pin=21dBm ................................................................................... 25
Figure 20 IMD products of Band 1 LTE and Pin=10dBm ................................................................................... 26 Figure 21 IMD products of Band 2 LTE and Pin=21dBm ................................................................................... 28
Figure 22 IMD products of Band 2 LTE and Pin=10dBm ................................................................................... 29
Figure 23 IMD products of Band 3 LTE and Pin=21dBm ................................................................................... 31
Figure 24 IMD products of Band 3 LTE and Pin=10dBm ................................................................................... 32 Figure 25 IMD products of Band 4 LTE and Pin=21dBm ................................................................................... 34
Figure 26 IMD products of Band 4 LTE and Pin=10dBm ................................................................................... 35 Figure 29 IMD products of Band 5 LTE and Pin=21dBm ................................................................................... 37
Figure 30 IMD products of Band 5 LTE and Pin=10dBm ................................................................................... 38 Figure 32 IMD products of Band 7 LTE and Pin=21dBm ................................................................................... 40 Figure 33 IMD products of Band 7 LTE and Pin=10dBm ................................................................................... 41 Figure 35 IMD products of Band 12 LTE and Pin=21dBm ................................................................................. 43
Figure 36 IMD products of Band 12 LTE and Pin=10dBm ................................................................................. 44
Figure 38 IMD products of Band 13 LTE and Pin=21dBm ................................................................................. 46 Figure 39 IMD products of Band 13 LTE and Pin=10dBm ................................................................................. 47 Figure 41 IMD products of Band 17 LTE and Pin=21dBm ................................................................................. 49
Figure 42 IMD products of Band 17 LTE and Pin=10dBm ................................................................................. 50
Figure 44 IMD products of Band 20 LTE and Pin=21dBm ................................................................................. 52 Figure 45 IMD products of Band 20 LTE and Pin=10dBm ................................................................................. 53
Figure 47 IMD products of Band 25 LTE and Pin=21dBm ................................................................................. 55 Figure 48 IMD products of Band 25 LTE and Pin=10dBm ................................................................................. 56 Figure 50 IMD products of Band 30 LTE and Pin=21dBm ................................................................................. 58
Figure 51 IMD products of Band 30 LTE and Pin=10dBm ................................................................................. 59
Figure 53 Setup for harmonics measurement .................................................................................................. 61 Figure 54 2nd harmonics at fc=1950MHz ........................................................................................................... 62
Figure 55 3rd harmonics at fc=1950MHz ............................................................................................................ 62
Figure 56 2nd harmonics at fc=1880MHz ........................................................................................................... 63 Figure 57 3rd harmonics at fc=1880MHz ............................................................................................................ 63
Application Note 4 Revision 1.0
2016-02-03
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
List of figures
Figure 58 2nd harmonics at fc=1732,5MHz ........................................................................................................ 65 Figure 59 3rd harmonics at fc=1732,5MHz ......................................................................................................... 65
Figure 60 2nd harmonics at fc=1732,5MHz ........................................................................................................ 67 Figure 61 3rd harmonics at fc=1732,5MHz ......................................................................................................... 67
Figure 62 2nd harmonics at fc=2535MHz ........................................................................................................... 68 Figure 63 3rd harmonics at fc=2535MHz ............................................................................................................ 68
Figure 64 2nd harmonics at fc=2535MHz ........................................................................................................... 69 Figure 65 3rd harmonics at fc=2535MHz ............................................................................................................ 69
Figure 66 2nd harmonics at fc=716MHz ............................................................................................................. 70 Figure 67 3rd harmonics at fc=716MHz .............................................................................................................. 70 Figure 68 2nd harmonics at fc=782MHz ............................................................................................................. 71
Figure 69 3rd harmonics at fc=782MHz .............................................................................................................. 71 Figure 70 2nd harmonics at fc=710MHz ............................................................................................................. 72
Figure 71 3rd harmonics at fc=710MHz .............................................................................................................. 72 Figure 72 2nd harmonics at fc=847MHz ............................................................................................................. 73 Figure 73 3rd harmonics at fc=847MHz .............................................................................................................. 73 Figure 74 2nd harmonics at fc=1882,5MHz ........................................................................................................ 74
Figure 75 3rd harmonics at fc=1882,5MHz ......................................................................................................... 74 Figure 76 2nd harmonics at fc=2310MHz ........................................................................................................... 75
Figure 77 3rd harmonics at fc=2310MHz ............................................................................................................ 75 Figure 78 BGS13S2N9 Application Board and deembedding kit ..................................................................... 76
Figure 79 PCB crosssection of the evaluation board for BGS13S2N9 ............................................................. 76
Figure 80 SMA connector for deembeding procedure ..................................................................................... 77
Application Note 5 Revision 1.0
2016-02-03
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
List of Tables
List of Tables
Table 1 Overview LTE Bands ............................................................................................................................ 7 Table 2 Pin Configuration of BGS13S2N9 ..................................................................................................... 10
Table 3 Modes of Operation: Truth Table of BGS13S2N9 ............................................................................. 10
Table 4 Insertion Loss in dB ........................................................................................................................... 12 Table 5 Antenna Return Loss in dB ................................................................................................................ 13 Table 6 Port Return Loss in dB ....................................................................................................................... 14
Table 7 Isolation Antenna to Port in dB ........................................................................................................ 15
Table 8 Isolation Port to Port with RF1 active in dB ..................................................................................... 16 Table 9 Isolation Port to Port with RF2 active in dB ..................................................................................... 17
Table 10 Isolation Port to Port with RF3 active in dB ..................................................................................... 18 Table 11 IMD Mathematical definitions ........................................................................................................... 22 Table 12 IMD Mathematical definitions extended .......................................................................................... 23
Table 13 IMD products of Band 1 LTE .............................................................................................................. 27
Table 14 IMD products of Band 2 LTE .............................................................................................................. 30
Table 15 IMD products of Band 3 LTE .............................................................................................................. 33 Table 16 IMD products of Band 4 LTE .............................................................................................................. 36
Table 17 IMD products of Band 5 LTE .............................................................................................................. 39 Table 18 IMD products of Band 7 LTE .............................................................................................................. 42 Table 19 IMD products of Band 12 LTE ............................................................................................................ 45
Table 20 IMD products of Band 13 TE .............................................................................................................. 48 Table 21 IMD products of Band 17 LTE ............................................................................................................ 51
Table 22 IMD products of Band 20 LTE ............................................................................................................ 54 Table 23 IMD products of Band 25 LTE ............................................................................................................ 57
Table 24 IMD products of Band 30 LTE ............................................................................................................ 60
1) The graphs are generated with the simulation program AWR Microwave Office®.
Application Note 6 Revision 1.0
2016-02-03
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Introduction
1 Introduction
Infineon’s RF CMOS switches are the first on the market to be based purely on standard industrial CMOS
processes that offer low insertion loss, high isolation and low harmonics generation for high-volume
production. They are widely used for band selection/switching or diversity switching at the antenna or different
RF paths within the RF Front-End (FE).
The BGS13S2N9 RF MOS switch is specifically designed for cell phone and mobile applications. Any of the 3
ports can be used as termination of the diversity antenna handling up to 30 dBm.
This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low
harmonic generation in termination mode. The on-chip controller integrates CMOS logic and level shifters,
driven by control inputs from 1.35 V to VDD. The BGS13S2N9 RF Switch is manufactured in Infineon’s patented
MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS
including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.1 mm2 and a
maximum height of 0.375 mm.
The recent trend of smartphone and tablet users to download more and more data anytime and anywhere
increases the demand for more bandwidth and for an additional receiver channel called the diversity path. To
select the right receive band, a diversity switch with low insertion loss and excellent RF performance is one
method of choice. Nowadays, diversity switches covering up to 7 or more different UMTS/LTE bands are
becoming more and more popular in smartphones and tablets (Overview LTE Bands).
Figure 1 Excample of TD-LTE band for diversity path
B38 SAW
B39 SAW
B40 SAW
RF IC
Diversity Switch
Diversity
Antenna
LTE LNA
B38 SAW
B39 SAW
B40 SAWDiplexer
PCB Trace
Application Note 7 Revision 1.0
2016-02-03
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Introduction
Table 1 Overview LTE Bands
Band No. Band
Definition
Uplink Frequency
Range
Downlink Frequency
Range
FDD/TDD
System
Comment
1 Mid-Band 1920-1980 MHz 2110-2170 MHz FDD
2 Mid-Band 1850-1910 MHz 1930-1990 MHz FDD
3 Mid-Band 1710-1785 MHz 1805-1880 MHz FDD
4 Mid-Band 1710-1755 MHz 2110-2155 MHz FDD
5 Low-Band 824-849 MHz 869-894 MHz FDD
6 Low-Band 830-840 MHz 875-885 MHz FDD
7 High-Band 2500-2570 MHz 2620-2690 MHz FDD
8 Low-Band 880-915 MHz 925-960 MHz FDD
9 Mid-Band 1749.9-1784.9 MHz 1844.9-1879.9 MHz FDD
10 Mid-Band 1710-1770 MHz 2110-2170 MHz FDD
11 Mid-Band 1427.9-1452.9 MHz 1475.9-1500.9 MHz FDD
12 Low-Band 698-716 MHz 728-746 MHz FDD
13 Low-Band 777-787 MHz 746-756 MHz FDD
14 Low-Band 788-798 MHz 758-768 MHz FDD
15 reserved reserved FDD
16 reserved Reserved FDD
17 Low-Band 704-716 MHz 734-746 MHz FDD
18 Low-Band 815-830 MHz 860-875 MHz FDD
19 Low-Band 830-845 MHz 875-890 MHz FDD
20 Low-Band 832-862 MHz 791-821 MHz FDD
21 Mid-Band 1447.9-1462.9 MHz 1495.9-1510.9 MHz FDD
22 High-Band 3410-3500 MHz 3510-3600 MHz FDD
23 Mid-Band 2000-2020 MHz 2180-2200 MHz FDD
24 Mid-Band 1626.5-1660.5 MHz 1525-1559 MHz FDD
25 Mid-Band 1850-1915 MHz 1930-1995 MHz FDD
26 Low-Band 814-849 MHz 859-894 MHz FDD
27 Low-Band 807-824 MHz 852-869 MHz FDD
28 Low-Band 703-748 MHz 758-803 MHz FDD
29 Low-Band N/A 716-728 MHz FDD
30 High-Band 2305-2315 MHz 2350-2360 MHz FDD
31 Low-Band 452.5-457.5 MHz 462.5-467.5MHz FDD
32 Mid-Band N/A 1452-1496 MHz FDD
33 Mid-Band 1900-1920 MHz TDD
34 Mid-Band 2010-2025 MHz TDD
35 Mid-Band 1850-1910 MHz TDD
36 Mid-Band 1930-1990 MHz TDD
37 Mid-Band 1910-1930 MHz TDD
Application Note 8 Revision 1.0
2016-02-03
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Introduction
Table 1 Overview LTE Bands
38 High-Band 2570-2620 MHz TDD
39 Mid-Band 1880-1920 MHz TDD
40 High-Band 2300-2400 MHz TDD
41 High-Band 2496-2690 MHz TDD
42 High-Band 3400-3600 MHz TDD
43 High-Band 3600-3800 MHz TDD
44 Low-Band 703-803 MHz TDD
46 Mid-Band 5150-5925 MHz TDD Note: FDD: Frequency Division Duplexing; TDD: Time Division Duplexing
Application Note 9 Revision 1.0
2016-02-03
Wideband SP3T RF Switch for RF diversity or RF band
selection applications
BGS13S2N9 BGS13S2N9
BGS13S2N9 Features
2 BGS13S2N9 Features
2.1 Main Features
3 high-linearity TRx paths with power handling capability of up to 30 dBm
Low insertion loss
Low harmonic generation
High port-to-port-isolation
Suitable for Edge / CDMA2000 / LTE / WCDMA applications
0.1 to 3.0 GHz coverage
No decoupling capacitors required if no DC applied on RF lines
On-chip control logic including ESD protection
General Purpose Input-Output (GPIO) Interface
Small form factor 1.1mm x 1.1mm x 0.375mm
No power supply blocking required
High EMI robustness
RoHS and WEEE compliant package
Figure 2 BGS13S2N9 package
2.2 Functional Diagram
Figure 3 Equivalent Circuit Block diagram of BGS13S2N9
Application Note 10 Revision 1.0
2016-02-03
BGS13S2N9 Features
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
2.3 Signal Description
Table 2 Pin Configuration of BGS13S2N9
Pin No. Name Pin Type Function
1 V1 I Control Pin 1
2 RF3 I/O RF-Port3
3 RF1 I/O RF-Port1
4 RFin I/O RF-Input
5 RF2 I/O RF-Port2
6 DGND GND Digital Ground
7 VDD PWR Power Supply
8 V2 I Control Pin 2
9 GND GND Digital Ground
Table 3 Modes of Operation: Truth Table of BGS13S2N9
Control Inputs
State Mode V1 V2 RF1 RF2 RF3
1 Isolation 0 0 off off off
2 RFin – RF1 1 0 on off off
3 RFin – RF2 0 1 off on off
4 RFin – RF3 1 1 off off on
Figure 4 Package and pin connections (top view) of BGS13S2N9
Application Note 11 Revision 1.0
2016-02-03
Application Circuit and Performance Overview
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
3 Application Circuit and Performance Overview
In this chapter the performance of the application circuit, the schematic and bill-on-materials are presented.
Device: BGS13S2N9
Application: Wideband RF S3PT Switch
PCB Marking: BGS13xN9
3.1 Summary of Measurement Results
All measurement results of this application note are measured with a typical device of the BGS13S2N9 on an
application board. The measurement procedure is shown in chapters Intermodulation, Harmonic Generation
and Evaluation Board and Layout Information including the needed de-embedding.
The small signal characteristics are measured at 25 °C, -5 dBm Pin, 2.8V Vdd, 2.8V Vcrlt up to 3GHz with a Network
Analyzer connected to an automatic multiport switch box in single ended mode.
In the following tables and graphs the most important RF parameter of the BGS13S2N9 are shown. The markers
are set to the most important frequencies of the WCDMA system.
Application Note 12 Revision 1.0
2016-02-03
Application Circuit and Performance Overview
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
3.2 Insertion Loss
Figure 5 Insertion Loss in dB up to 3GHz
Table 4 Insertion Loss in dB
Frequency (MHz)
824 915 1710 1910 2170 2500 2700
RF1 0.22 0.23 0.28 0.31 0.39 0.54 0.66
RF2 0.22 0.22 0.26 0.28 0.34 0.45 0.54
RF3 0.23 0.24 0.31 0.34 0.42 0.58 0.69
0.3 1000 2000 3000
Frequency (MHz)
Insertion Loss
-10
-8
-6
-4
-2
0
IL(d
B)
2170 MHz-0.3851 dB
1710 MHz-0.2791 dB
824 MHz-0.2165 dB
2700 MHz-0.6901 dB
2500 MHz-0.5796 dB
1910 MHz-0.3385 dB
915 MHz-0.241 dB
RF1
RF2
RF3
Application Note 13 Revision 1.0
2016-02-03
Application Circuit and Performance Overview
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
3.3 Antenna Return Loss
Figure 6 RF matching @ Ant Port in dB
Table 5 Antenna Return Loss in dB
Frequency (MHz)
824 915 1710 1910 2170 2500 2700
RF1 22.04 21.46 18.33 17.06 14.95 12.44 11.11
RF2 21.62 21.09 19.24 18.28 16.48 13.99 12.54
RF3 22.71 22.20 18.96 17.67 15.61 13.04 11.69
0.3 1000 2000 3000
Frequency (MHz)
Ant Return Loss
-40
-30
-20
-10
0
Ant R
etu
rn L
oss (
dB
)
2700 MHz-12.54 dB2500 MHz
-13.04 dB2170 MHz-14.94 dB
1710 MHz-19.24 dB
1910 MHz-18.28 dB
915 MHz-21.08 dB
824 MHz-21.62 dB
RF1
RF2
RF3
Application Note 14 Revision 1.0
2016-02-03
Application Circuit and Performance Overview
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
3.4 Port Return Loss
Figure 7 RF matching @ RFx Ports in dB
Table 6 Port Return Loss in dB
Frequency (MHz)
824 915 1710 1910 2170 2500 2700
RF1 22.42 21.92 19.04 17.79 15.62 13.02 11.62
RF2 21.81 21.34 19.17 18.09 16.37 13.83 12.42
RF3 23.48 22.98 19.91 18.48 16.14 13.51 12.13
0.3 1000 2000 3000
Frequency (MHz)
Port Return Loss
-40
-30
-20
-10
0
Po
rt R
etu
rn L
oss (
dB
)
2170 MHz-15.61 dB
1710 MHz-19.04 dB
824 MHz-23.48 dB
915 MHz-21.92 dB
1910 MHz-17.79 dB
2500 MHz-13.51 dB
2700 MHz-11.62 dB
RF1
RF2
RF3
Application Note 15 Revision 1.0
2016-02-03
Application Circuit and Performance Overview
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
3.5 Isolation Antenna to Port
Figure 8 Isolation Antenna to Port in dB
Table 7 Isolation Antenna to Port in dB
Frequency (MHz)
824 915 1710 1910 2170 2500 2700
RF1_act: RFin_RF2 40.90 39.46 30.17 28.26 26.39 23.88 23.05
RF1_act: RFin_RF3 37.16 35.96 27.92 26.30 24.63 22.51 21.78
RF2_act: RFin_RF1 34.53 33.42 26.33 24.88 23.33 21.13 20.50
RF2_act: RFin_RF3 37.33 36.18 28.81 27.23 25.59 23.13 22.72
RF3_act: RFin_RF1 38.58 36.88 26.38 24.50 22.54 20.16 19.13
RF3_act: RFin_RF2 38.34 37.07 28.68 26.94 25.21 22.87 21.88
0.3 1000 2000 3000
Frequency (MHz)
Isolation Antenna to Port
-100
-80
-60
-40
-20
0
Iso
latio
n A
nte
nn
a to
Po
rt (
dB
)
2700 MHz-19.13 dB
2500 MHz-20.16 dB2170 MHz
-23.33 dB
1910 MHz-24.49 dB1710 MHz
-26.32 dB
915 MHz-33.42 dB
824 MHz-34.52 dB
RF1_act: RFin_RF2
RF1_act: RFin_RF3
RF2_act: RFin_RF1
RF2_act: RFin_RF3
RF3_act: RFin_RF1
RF3_act: RFin_RF2
Application Note 16 Revision 1.0
2016-02-03
Application Circuit and Performance Overview
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
3.6 Isolation Port to Port
Figure 9 Isolation Port to Port with RF1 active in dB
Table 8 Isolation Port to Port with RF1 active in dB
Frequency (MHz)
824 915 1710 1910 2170 2500 2700
RF2_RF1 45.25 43.60 33.27 31.36 29.36 26.96 26.17
RF3_RF1 34.45 33.25 25.42 23.76 21.99 19.56 18.79
RF3_RFin 37.14 35.96 27.91 26.30 24.63 22.46 21.79
RF2_RFin 40.89 39.46 30.17 28.27 26.38 23.88 23.04
0.3 1000 2000 3000
Frequency (MHz)
Isolation RF1 Active
-100
-80
-60
-40
-20
0
Isola
tion R
F1 A
ctive (
dB
)
2170 MHz-21.99 dB
2700 MHz-18.79 dB
2500 MHz-19.56 dB
1910 MHz-23.76 dB1710 MHz
-25.42 dB915 MHz-33.25 dB
824 MHz-37.14 dB
RF2_RF1
RF3_RF1
RF3_RFin
RF2_RFin
Application Note 17 Revision 1.0
2016-02-03
Application Circuit and Performance Overview
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 10 Isolation Port to Port with RF2 active in dB
Table 9 Isolation Port to Port with RF2 active in dB
Frequency (MHz)
824 915 1710 1910 2170 2500 2700
RF1_RF2 37.07 35.98 28.90 27.51 26.05 24.08 23.65
RF3_RFin 37.33 36.18 28.80 27.22 25.58 23.13 22.72
RF3_RF2 39.96 38.77 30.97 29.36 27.75 25.45 25.23
RF1_RFin 34.53 33.42 26.33 24.88 23.33 21.13 20.50
0.3 1000 2000 3000
Frequency (MHz)
Isolation RF2 Active
-100
-80
-60
-40
-20
0
Iso
latio
n R
F2
Active
(d
B)
2500 MHz-21.13 dB
2700 MHz-20.5 dB
1910 MHz-24.88 dB
2170 MHz-23.33 dB
1710 MHz-26.32 dB
915 MHz-33.42 dB
824 MHz-34.52 dB
RF1_RF2
RF3_RFin
RF3_RF2
RF1_RFin
Application Note 18 Revision 1.0
2016-02-03
Application Circuit and Performance Overview
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 11 Isolation Port to Port with RF3 active in dB
Table 10 Isolation Port to Port with RF3 active in dB
Frequency (MHz)
824 915 1710 1910 2170 2500 2700
RF3_RF1 36.36 34.90 25.41 23.58 21.75 19.29 18.48
RF2_RFin 38.35 37.08 28.69 26.94 25.21 22.89 21.88
RF3_RF2 42.18 40.98 32.42 30.74 29.20 27.24 26.56
RF1_RFin 38.55 36.85 26.39 24.49 22.54 20.15 19.11
0.3 1000 2000 3000
Frequency (MHz)
Isolation RF3 Active
-100
-80
-60
-40
-20
0
Isola
tion R
F3
Active
(dB
) 824 MHz-36.36 dB
915 MHz-34.9 dB 1710 MHz
-25.41 dB
1910 MHz-23.58 dB
2170 MHz-21.75 dB
2500 MHz-19.28 dB
2700 MHz-18.48 dB
RF3_RF1
RF2_RFin
RF3_RF2
RF1_RFin
Application Note 19 Revision 1.0
2016-02-03
Switching time
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
4 Switching time
4.1 Measurement Specifications
Switching On Time: 50% Trigger signal to 90 % RF Signal
Switching Off Time: 50% Trigger signal to 10% RF Signal
Figure 12 Switching Time
Rise time: 10% to 90% RF Signal
Fall time: 90% to 10% RF Signal
Figure 13 Rise/Fall Time
tON
tOFF
VCTRL
RF signal
VCTRL
2
90% RF signal
10% RF signal
tOFF
RF signal
tON
90% RF signal
10% RF signal
Application Note 20 Revision 1.0
2016-02-03
Switching time
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
4.2 Measurement Setup
The setup on below is representing switching time measurement setup. In the Measurement setup the setup is
configured for a SPDT switch, where the trigger signal is a one kHz signal with the amplitude of device
Vdd/Vctrl. The setup properties (RFin and trigger signal pulse) could be changed for measuring other devices
like amplifier.
50 Ohm
Oscilloscope
Signal Generatorf=1GHz
P=+10dBm
DUT
Power SupplyVdd=2,8V
VddVctrl
Figure 14 Measurement setup
4.3 Measurement results
The switching Time measurement setup consist of one pulse generator which generates a sqare wave with 50%
duty cycle and an amplitude of 1.8 Volts, an oscilloscope which can detect the 1 GHz signal and the 1 kHz signal
and one Signal generator which is set to an output signal of 1GHz with a power level 10 dBm.
If the oscilloscope can not detect the 1 GHz signal of the RF path, due to small bandwith, it is possible tu use a
cristal oscillator in front of the oscilloscope (such a device detects any RF signal present at input and
commutate that one) that the RF signal can be detected.
Vctrl to RF RF rise Time
Spec 300ns 150ns
VDD= 2.7V
RF1 203.4ns 30.6ns
Vctrl= 0/1.8V Pulsed with 600Hz 50%duty cicle RF2 238.4ns 23.4ns
RFIn= 300MHz @ 0dBm
RF3 204ns 27ns
Application Note 21 Revision 1.0
2016-02-03
Switching time
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
RF1
RF1
RF2
RF2
RF3
RF3
Switching On Time: 50% Trigger signal to 90 % RF Signal
Rise time: 10% to 90% RF Signal
Figure 15 Screenshots of switching times
Application Note 22 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
5 Intermodulation
Intermodulation distortion is characterized by the appearance in the output of frequencies equal to the sums
and differences of integral multiples of the two or more component frequencies present in the input waveform.
Defined by the following expressions:
Table 11 IMD Mathematical definitions
Second Order IMD 𝑓𝐼𝑀𝐷2𝑙𝑜𝑤 = 𝑓𝑅𝑥 − 𝑓𝑇𝑥 𝑓𝐼𝑀𝐷2ℎ𝑖𝑔ℎ = 𝑓𝑅𝑥 + 𝑓𝑇𝑥
Third Order IMD 𝑓𝐼𝑀𝐷3𝑙 = 2𝑓𝑇𝑥 − 𝑓𝑅𝑥 𝑓𝐼𝑀𝐷3𝑚 = 2𝑓𝑅𝑥 + 𝑓𝑇𝑥 𝑓𝐼𝑀𝐷3ℎ = 𝑓𝑅𝑥 + 2𝑓𝑇𝑥
Figure 16 Representation of IMD products
Application Note 23 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
5.1 Test conditions
Developing the same mathematical expressions we can see that external signals matching IMD frequencies can
interfere over𝑓𝑅𝑥. All IMD measurements are made at room temperature with a continuous wave (CW) RF
carrier signal for Tx and blocker (jammer) signal.
Table 12 IMD Mathematical definitions extended
Second Order IMD 𝑓𝐼𝑀𝐷2𝑙𝑜𝑤 = 𝑓𝑅𝑥 − 𝑓𝑇𝑥 𝑓𝑅𝑥 = 𝑓𝐼𝑀𝐷2𝑙𝑜𝑤 + 𝑓𝑇𝑥
𝑓𝐼𝑀𝐷2ℎ𝑖𝑔ℎ = 𝑓𝑅𝑥 + 𝑓𝑇𝑥
𝑓𝑅𝑥 = 𝑓𝐼𝑀𝐷2ℎ𝑖𝑔ℎ − 𝑓𝑇𝑥
Third Order IMD 𝑓𝐼𝑀𝐷3𝑙 = 2𝑓𝑇𝑥 − 𝑓𝑅𝑥 𝑓𝑅𝑥 = 2𝑓𝑇𝑥 − 𝑓𝐼𝑀𝐷3𝑙
𝑓𝐼𝑀𝐷3𝑚 = 2𝑓𝑅𝑥 + 𝑓𝑇𝑥 𝑓𝑅𝑥 = (𝑓𝑇𝑥 − 𝑓𝐼𝑀𝐷3𝑚)/2
𝑓𝐼𝑀𝐷3ℎ = 𝑓𝑅𝑥 + 2𝑓𝑇𝑥 𝑓𝑅𝑥 = 𝑓𝐼𝑀𝐷3ℎ − 2𝑓𝑇𝑥
One of the possible intermodulation scenarios is shown in Block diagram of RF Switch intermodulation. The
transmission (Tx) signal from the main antenna is coupled into the diversity antenna with high power. This
signal (21 dBm or 10 dBm depending the case) and a received Jammer signal (-15 dBm) are entering the switch.
Thanks to the specified application for the BGS13S2N9 in between the filters and the Transceiver, the Tx signal
from the main antenna loose until arriving at the switch input mostly 5 to 10 or more dB, depending of the filter
and PCB structure of the RF frontend. The IMD products are measured with a Tx of 21dBm or 10dBm, which is
corresponding to the IMD spec of a main antenna diversity switch like Infineon BGS13S2N9. Therefore, the
measured IMD products will be extremely better in the specified application circuit within the filters and
transceiver as showed in the measurement results below.
Figure 17 Block diagram of RF Switch intermodulation
Application Note 24 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9 Special combinations of TX and Jammer signal are producing intermodulation products 2nd and 3rd order,
which fall in the RX band and disturb the wanted RX signal.
5.2 Measurement Setup
The test setup for the IMD measurements has to provide a very high isolation between RX and TX signals. As an
example the test setup and the results for the high band are shown (Block diagram of RF Switch
intermodulation and Table 11).
For the RX / TX separation a professional duplexer with 80 dB isolation is used.
For each distortion scenario there is a min and a max value given. This variation is caused by a phase shifter
connected between switch and duplexer. In the test setup the phase shifter represents a no ideal matching of
the switch to a 50 Ohm load.
Figure 18 Block diagram of RF Switch intermodulation
Application Note 25 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
5.3 Measurement Results
Figure 19 IMD products of Band 1 LTE and Pin=21dBm
Application Note 26 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 20 IMD products of Band 1 LTE and Pin=10dBm
Application Note 27 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 13 IMD products of Band 1 LTE
IMD Band I
PTx=21dBm
RF (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=190MHz) -118.79 -117.21 -120.58 -117.95 -120.03 -118.64
IMD2High
(fblocker=4090MHz) -105.98 -104.48 -108.78 -107.15 -105.42 -104.22
IMD3
(fblocker=1760MHz) -120.58 -118.6 -121.66 -120.01 -120.6 -117.88
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=190MHz) -128.81 -125.77 -132.89 -129.22 -130.34 -126.27
IMD2High
(fblocker=4090MHz) -116.06 -114.41 -118.66 -117.53 -116.4 -113.68
IMD3
(fblocker=1760MHz) -138.28 -129.76 -136.56 -131.38 -136.82 -130.55
Application Note 28 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 21 IMD products of Band 2 LTE and Pin=21dBm
Application Note 29 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 22 IMD products of Band 2 LTE and Pin=10dBm
Application Note 30 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 14 IMD products of Band 2 LTE
IMD Band I
PTx=21dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=80MHz) -106.73 -106.56 -106.79 -106.62 -106.89 -106.73
IMD2High
(fblocker=3840MHz) -120.62 -116.42 -120 -115.84 -116.87 -113.79
IMD3
(fblocker=1800MHz) -116.95 -115.75 -115.91 -115.32 -117.56 -116.14
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=80MHz) -115.96 -115.77 -116.19 -115.78 -116.2 -115.9
IMD2High
(fblocker=3840MHz) -129.06 -126.81 -129.76 -124.82 -129.45 -126.06
IMD3
(fblocker=1800MHz) -130.35 -126.63 -129.64 -126.47 -129.93 -126.93
Application Note 31 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 23 IMD products of Band 3 LTE and Pin=21dBm
Application Note 32 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 24 IMD products of Band 3 LTE and Pin=10dBm
Application Note 33 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 15 IMD products of Band 3 LTE
IMD Band I
PTx=21dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=400MHz) -112.54 -110.51 -112.28 -110 -113.65 -110.37
IMD2High
(fblocker=3856MHz) -110.37 -106.61 -109.42 -105.37 -111.8 -106.54
IMD3
(fblocker=1332.5MHz) -108.7 -105.34 -108.81 -106.62 -108.82 -106.83
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=400MHz) -121.34 -119.62 -121.43 -118.93 -121.37 -116.94
IMD2High
(fblocker=3856MHz) -118.26 -116.43 -118.29 -115.55 -120.12 -117.85
IMD3
(fblocker=1332.5MHz) -121.95 -119.45 -122.70 -118.95 -122.45 -119.26
Application Note 34 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 25 IMD products of Band 4 LTE and Pin=21dBm
Application Note 35 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 26 IMD products of Band 4 LTE and Pin=10dBm
Application Note 36 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 16 IMD products of Band 4 LTE
IMD Band I
PTx=21dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=400MHz) -112.97 -110.94 -112.71 -110.43 -116.08 -113.8
IMD2High
(fblocker=3856MHz) -110.37 -107.95 -109.42 -105.37 -113.31 -107.22
IMD3
(fblocker=1332.5MHz) -108.7 -106.03 -108.78 -106.14 -110.22 -108.04
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=400MHz) -121.77 -120.05 -121.86 -119.36 -126.8 -122.37
IMD2High
(fblocker=3856MHz) -118.26 -116.43 -118.29 -115.55 -121.7 -117.43
IMD3
(fblocker=1332.5MHz) -123.22 -118.37 -123.27 -118.28 -123.52 -119.09
Application Note 37 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 29 IMD products of Band 5 LTE and Pin=21dBm
Application Note 38 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 30 IMD products of Band 5 LTE and Pin=10dBm
Application Note 39 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 17 IMD products of Band 5 LTE
IMD Band I
PTx=21dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=45MHz) -105.87 -105.63 -106.31 -106.1 -106.38 -106.03
IMD2High
(fblocker=1718MHz) -117 -113.22 -116.94 -112.57 -117.69 -113.34
IMD3
(fblocker=791.5MHz) -112.82 -110.22 -112.96 -110.17 -114.42 -110.6
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=45MHz) -116.65 -116.15 -116.84 -116.65 -117.01 -116.43
IMD2High
(fblocker=1718MHz) -126.41 -121.99 -126.02 -121.27 -128.01 -121.77
IMD3
(fblocker=791.5MHz) -132.9 -129.15 -135.68 -132.56 -134.84 -130.15
Application Note 40 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 32 IMD products of Band 7 LTE and Pin=21dBm
Application Note 41 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 33 IMD products of Band 7 LTE and Pin=10dBm
Application Note 42 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 18 IMD products of Band 7 LTE
IMD Band I
PTx=21dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=120MHz) -104.92 -103.94 -104.63 -103.65 -104.29 -103.48
IMD2High
(fblocker=5190MHz) -109.01 -104.75 -108.36 -104.83 -107.46 -104.46
IMD3
(fblocker=2415MHz) -102.59 -98.05 -101.24 -98.02 -105.61 -97.04
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=120MHz) -114.82 -114.04 -114.59 -113.76 -114.7 -113.42
IMD2High
(fblocker=5190MHz) -117.78 -114.72 -118.25 -115.41 -117.62 -114.56
IMD3
(fblocker=2415MHz) -120.79 -116.38 -122.85 -116.72 -121.05 -115.83
Application Note 43 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 35 IMD products of Band 12 LTE and Pin=21dBm
Application Note 44 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 36 IMD products of Band 12 LTE and Pin=10dBm
Application Note 45 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 19 IMD products of Band 12 LTE
IMD Band I
PTx=21dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=30MHz) -105.42 -104.89 -105.55 -105.17 -105.48 -105.13
IMD2High
(fblocker=1462MHz) -117.01 -111.02 -117.02 -112.58 -114.04 -111.43
IMD3
(fblocker=686MHz) -106.56 -102.37 -107.1 -103.12 -108.46 -104.03
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=30MHz) -116.01 -115.49 -116.51 -115.72 -116.11 -115.45
IMD2High
(fblocker=1462MHz) -129.55 -123.48 -130.09 -121.99 -126.02 -121.79
IMD3
(fblocker=686MHz) -127.23 -122.08 -127.31 -121.95 -128.44 -124.16
Application Note 46 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 38 IMD products of Band 13 LTE and Pin=21dBm
Application Note 47 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 39 IMD products of Band 13 LTE and Pin=10dBm
Application Note 48 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 20 IMD products of Band 13 TE
IMD Band I
PTx=21dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=31MHz) -103.68 -103.32 -103.69 -103.43 -103.58 -103.32
IMD2High
(fblocker=1533MHz) -114.12 -104.78 -115.99 -105.25 -116.47 -106.24
IMD3
(fblocker=813MHz) -106 -102.7 -106 -102.7 -107 -103
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=31MHz) -113.96 -113.69 -114.1 -113.8 -114.03 -113.71
IMD2High
(fblocker=1533MHz) -122.49 -114.77 -124.13 -115.27 -126.06 -115.76
IMD3
(fblocker=813MHz) -125.57 -121.71 -126.5 -122 -128.55 -124.2
Application Note 49 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 41 IMD products of Band 17 LTE and Pin=21dBm
Application Note 50 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 42 IMD products of Band 17 LTE and Pin=10dBm
Application Note 51 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 21 IMD products of Band 17 LTE
IMD Band I
PTx=21dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=30MHz) -104.85 -104.41 -105.21 -104.75 -104.96 -104.65
IMD2High
(fblocker=1450MHz) -112.76 -108.74 -115.21 -109.87 -112.41 -109.15
IMD3
(fblocker=680MHz) -108 -103.61 -108.34 -104.12 -108.98 -104.95
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=30MHz) -115.6 -115.01 -115.98 -115.44 -115.65 -115.03
IMD2High
(fblocker=1450MHz) -125.53 -119.19 -126.26 -119.96 -123.28 -120.07
IMD3
(fblocker=680MHz) -126.22 -122.21 -127.89 -123.61 -127.45 -123.91
Application Note 52 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 44 IMD products of Band 20 LTE and Pin=21dBm
Application Note 53 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 45 IMD products of Band 20 LTE and Pin=10dBm
Application Note 54 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 22 IMD products of Band 20 LTE
IMD Band I
PTx=21dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=41MHz) -104.95 -104.75 -105.07 -104.8 -105.02 -104.79
IMD2High
(fblocker=1653MHz) -112.71 -108.68 -112.27 -107.86 -110.79 -105.81
IMD3
(fblocker=888MHz) -107.81 -103.71 -107.61 -103.79 -110.22 -106.17
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=41MHz) -115.59 -114.67 -115.7 -114.96 -115.93 -115.08
IMD2High
(fblocker=1653MHz) -121.66 -117.88 -121.05 -116.87 -119.82 -114.98
IMD3
(fblocker=888MHz) -127.6 -123.47 -127.66 -123.26 -129.94 -125.7
Application Note 55 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 47 IMD products of Band 25 LTE and Pin=21dBm
Application Note 56 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 48 IMD products of Band 25 LTE and Pin=10dBm
Application Note 57 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 23 IMD products of Band 25 LTE
IMD Band I
PTx=21dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=95MHz) -98.06 -97.86 -97.7 -97.52 -98.63 -98.31
IMD2High
(fblocker=3860MHz) -118.88 -114.26 -116.6 -111.56 -118.03 -110.09
IMD3
(fblocker=1787.5MHz) -112.43 -108.85 -111.89 -108.2 -112.72 -110
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=95MHz) -109.21 -108.05 -108.84 -108.44 -109.54 -109.29
IMD2High
(fblocker=3860MHz) -126.81 -122.78 -125.33 -120.75 -125.21 -119.55
IMD3
(fblocker=1787.5MHz) -131.6 -126.92 -134.08 -125.21 -131.81 -126.17
Application Note 58 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 50 IMD products of Band 30 LTE and Pin=21dBm
Application Note 59 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Figure 51 IMD products of Band 30 LTE and Pin=10dBm
Application Note 60 Revision 1.0
2016-02-03
Intermodulation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Table 24 IMD products of Band 30 LTE
IMD Band I
PTx=21dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=45MHz) -104.25 -103.97 -105.11 -104.86 -104.45 -104.15
IMD2High
(fblocker=4665MHz) -109.47 -107.53 -111.42 -109.42 -113.87 -108.54
IMD3
(fblocker=2265MHz) -115.57 -113.82 -114.71 -112.87 -115.61 -113.26
IMD Band I
PTx=10dBm
RF1 (dBm) RF2 (dBm) RF3 (dBm)
Min Max Min Max Min Max
IMD2Low2
(fblocker=45MHz) -114.6 -113.82 -115.39 -114.54 -114.85 -114.08
IMD2High
(fblocker=4665MHz) -123.94 -122.26 -125.95 -122.89 -125.58 -122.32
IMD3
(fblocker=2265MHz) -135.77 -130.51 -134.91 -129.29 -134.98 -130.4
2) The results of IMD2low can be improved by using an external shunt inductor of 27nH from RFin to GND.
Application Note 61 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6 Harmonic Generation
Harmonic generation is another important parameter for the characterization of a RF switch. RF switches have
in such a Differential Band select Switching application to deal with high RF levels, up to 24 dBm. With this high
RF power at the input of the switch harmonics are generated. This harmonics (2nd and 3rd) can disturb the
other reception bands or cause distortion in other RF applications (GPS, WLan) within the mobile phone.
6.1 Measurement Setup
Figure 53 Setup for harmonics measurement
The results for the 2nd and 3rd order harmonic generation at different Bands are shown from for all RF ports on
the following points. All measurements are done at room temperature with a CW Tx carrier signal.
The x-axis shows the input power and the yaxis show the generated harmonics in dBm.
Application Note 62 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2 Measurement results
6.2.1 Harmonics for Band 1
Figure 54 2nd harmonics at fc=1950MHz
Figure 55 3rd harmonics at fc=1950MHz
fc=1950MHz
Band 1
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin (dBm)
20 -70.42 -70.15 -70.66 -84.5 -85.15 -85.8
22 -66.62 -66.86 -66.78 -78.82 -79.11 -80.9
24 -62.95 -63 -62.85 -72.82 -73.1 -73.75
26 -59.41 -59.35 -58.98 -66.7 -66.98 -66.45
28 -55.75 -55.55 -55.1 -60.36 -60.78 -60.85
30 -52.15 -51.92 -52.36 -54.15 -54.53 -55.38
Application Note 63 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2.2 Harmonics for Band 2
Figure 56 2nd harmonics at fc=1880MHz
Figure 57 3rd harmonics at fc=1880MHz
fc=1880MHz
Band 2
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin (dBm)
20 -74.87 -73.65 -76.82 -88.8 -87.5 -89.25
22 -70.95 -69.75 -72.5 -82.75 -81.33 -83.25
24 -67.05 -65.85 -68.65 -76.65 -75.15 -77.45
26 -63.22 -62 -64.6 -70.55 -69.92 -71.52
28 -59.25 -58.05 -60.41 -64.15 -63.52 -65.39
30 -55.32 -54.33 -55.5 -57.9 -57.25 -59.42
Application Note 64 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Application Note 65 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2.3 Harmonics for Band 3
Figure 58 2nd harmonics at fc=1732,5MHz
Figure 59 3rd harmonics at fc=1732,5MHz
fc=1747.5MHz
Band 3
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin (dBm)
20 -75.39 -74.17 -77.34 -87.94 -86.64 -88.39
22 -71.47 -70.27 -73.02 -81.89 -80.47 -82.39
24 -67.57 -66.37 -69.17 -75.79 -74.29 -76.59
26 -63.74 -62.52 -65.12 -69.69 -69.06 -70.66
28 -59.77 -58.57 -60.93 -63.29 -62.66 -64.53
30 -55.84 -54.85 -56.02 -57.04 -56.39 -58.56
Application Note 66 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Application Note 67 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2.4 Harmonics for Band 4
Figure 60 2nd harmonics at fc=1732,5MHz
Figure 61 3rd harmonics at fc=1732,5MHz
fc=1732.5MHz
Band 4
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin
(dBm)
20 -74.7 -75.07 -75.14 -85.57 -88.35 -86.66
22 -70.89 -71.15 -71.15 -79.9 -82.15 -80.77
24 -67.35 -67.61 -67.35 -73.55 -76.15 -75.38
26 -63.7 -63.9 -63.45 -67.75 -70.22 -68.82
28 -59.95 -60.18 -60.61 -61.43 -63.87 -62.25
30 -56.4 -56.55 -56.88 -55.25 -57.78 -55.88
Application Note 68 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2.5 Harmonics for Band 5
Figure 62 2nd harmonics at fc=2535MHz
Figure 63 3rd harmonics at fc=2535MHz
fc=836.5MHz
Band 5
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin (dBm)
20 -72.6 -70 -74.1 -83.2 -82.1 -83.2
22 -68.1 -66.35 -70.1 -77.9 -75.9 -77.1
24 -64.69 -62.5 -66.26 -71.7 -69.6 -70.7
26 -60.57 -58.76 -62.19 -65.7 -63.25 -64.33
28 -56.48 -54.9 -57.82 -58.2 -57.34 -58.4
30 -52.64 -51.11 -53.4 -51.35 -51.85 -52.65
Application Note 69 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2.6 Harmonics for Band 7
Figure 64 2nd harmonics at fc=2535MHz
Figure 65 3rd harmonics at fc=2535MHz
fc=2535MHz
Band 7
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin (dBm)
20 -78.4 -77.78 -76.69 -89.12 -88.58 -90.64
22 -75.17 -74.29 -73.86 -82.87 -83.3 -84.96
24 -71.38 -70.28 -69.33 -76.57 -76.98 -78.8
26 -67.39 -66.38 -65.3 -70.2 -70.99 -72.34
28 -63.41 -62.64 -62.15 -63.76 -64.38 -64.35
30 -59.51 -58.94 -58.42 -57.5 -58.36 -58.61
Application Note 70 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2.7 Harmonics for Band 12
Figure 66 2nd harmonics at fc=716MHz
Figure 67 3rd harmonics at fc=716MHz
fc=716MHz
Band 12
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin (dBm)
20 -73.8 -72.89 -73.4 -81.8 -81.65 -82.9
22 -70 -69.08 -69.39 -75.5 -75.44 -76.62
24 -66.22 -65.28 -65.46 -69.23 -69.02 -70.25
26 -62.6 -61.54 -61.6 -62.87 -62.59 -63.9
28 -58.9 -57.82 -58.59 -57.07 -56.78 -58.15
30 -54.2 -53.21 -53.28 -51.6 -51.42 -52.74
Application Note 71 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2.8 Harmonics for Band 13
Figure 68 2nd harmonics at fc=782MHz
Figure 69 3rd harmonics at fc=782MHz
fc=782MHz
Band 13
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin (dBm)
20 -73.98 -73.18 -73.44 -82.6 -81.77 -83.2
22 -70.02 -69.3 -70.43 -76.33 -75.45 -77
24 -66.2 -65.35 -66.43 -69.95 -69.18 -70.62
26 -62.45 -61.48 -62.38 -63.65 -62.86 -64.28
28 -58.55 -57.53 -58.08 -57.8 -57.15 -58.55
30 -54.59 -53.63 -54.5 -52.3 -51.75 -53
Application Note 72 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2.9 Harmonics for Band 17
Figure 70 2nd harmonics at fc=710MHz
Figure 71 3rd harmonics at fc=710MHz
fc=710MHz
Band 17
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin (dBm)
20 -71.7 -71.48 -72.11 -80.65 -80.35 -81.4
22 -67.8 -67.75 -68.11 -74.35 -74.05 -75.16
24 -63.97 -63.65 -64.15 -67.95 -67.8 -68.85
26 -60.22 -59.8 -60.19 -61.57 -61.4 -62.48
28 -56.44 -55.95 -56.05 -55.7 -55.54 -56.64
30 -52.65 -52.22 -52.66 -50.15 -50.11 -51.13
Application Note 73 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2.10 Harmonics for Band 20
Figure 72 2nd harmonics at fc=847MHz
Figure 73 3rd harmonics at fc=847MHz
fc=847MHz
Band 20
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin (dBm)
20 -72.36 -71.36 -73.65 -83.47 -81.95 -82.75
22 -68.63 -67.63 -69.75 -77.15 -75.65 -76.65
24 -64.88 -63.87 -65.85 -70.88 -69.38 -70.35
26 -61.15 -60.14 -61.95 -64.36 -63.08 -63.86
28 -57.35 -56.28 -57.78 -58.46 -57.25 -57.9
30 -53.58 -52.61 -53.45 -52.95 -51.75 -52.25
Application Note 74 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2.11 Harmonics for Band 25
Figure 74 2nd harmonics at fc=1882,5MHz
Figure 75 3rd harmonics at fc=1882,5MHz
fc=1882.5MHz
Band 25
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin (dBm)
20 -74.5 -73.4 -75.15 -85.8 -85.7 -87.62
22 -70.15 -69.5 -71.15 -80.15 -80.43 -81.35
24 -66.72 -65.64 -67.15 -74.15 -74.35 -75.55
26 -62.5 -61.83 -63.05 -68.12 -68.3 -69.65
28 -58.55 -57.88 -58.85 -62.35 -62.15 -63.35
30 -54.65 -54.05 -54.68 -57.01 -56.15 -57.05
Application Note 75 Revision 1.0
2016-02-03
Harmonic Generation
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
6.2.12 Harmonics for Band 30
Figure 76 2nd harmonics at fc=2310MHz
Figure 77 3rd harmonics at fc=2310MHz
fc=2310MHz
Band 30
H2 H3
RF1 (dBm) RF2 (dBm) RF3 (dBm) RF1 (dBm) RF2 (dBm) RF3 (dBm)
RFin (dBm)
20 -76.37 -76.82 -76.66 -83.35 -82.51 -81.21
22 -72.43 -74 -73.55 -77.27 -75.76 -75.07
24 -68.76 -70.28 -69.45 -71.51 -69.51 -68.8
26 -65.16 -66.66 -66.06 -64.23 -63.45 -62.34
28 -61.4 -62.04 -61.4 -58.13 -57.22 -56.48
30 -57.84 -58.57 -57.88 -52.75 -50.96 -50.21
Application Note 76 Revision 1.0
2016-02-03
Evaluation Board and Layout Information
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
7 Evaluation Board and Layout Information
7.1 Evaluation Board
In this application note, the following PCB is used:
PCB Marking: BGS13xN9
PCB material: FR4
r of PCB material: 4.3
Figure 78 BGS13S2N9 Application Board and deembedding kit
Figure 79 PCB crosssection of the evaluation board for BGS13S2N9
Copper
35µm FR4, 0.8mm
Vias
Rogers 04002, Core, 0.2 mm
Application Note 77 Revision 1.0
2016-02-03
Evaluation Board and Layout Information
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
7.2 Measurement description and deembedding
Below is a picture of the evaluation board used for the measurements (SMA connector for deembeding
procedure). The board is designed in the way that all connecting 50 Ohm lines have the same length.
To get correct called “device level” measurement values for the insertion loss of the BGS13S2N9 all influences
and losses of the evaluation board, lines and connectors have to be eliminated. Therefore a separate
deembedding board, representing the line length is necessary.
After full port calibration of the network analyzer (NWA) a deembedding has to be done in several steps:
Use an SMA connector whose inner conductor has been removed to tune out one of the SMA to PCB
transitions using the port extension on one port (Figure 80). Turn port extensions on.
Measure S21 of the halfthru structure (BGS13S2N9 Application Board and deembedding kit, smallest
board) with port extension enabled. The result is the deembedding of S21 including only one SMA
connector and the transmission line to the chip. Store this as Sparameter (s2p) file.
Turn all port extension off.
Load the stored sparameter file as deembedding on all used NWA ports
Check insertion loss with the deembedding through board (BGS13S2N9 Application Board and
deembedding kit right upper board)
Figure 80 SMA connector for deembeding procedure
If the check of the deembedding shows an insertion loss of the through about + 0.4 dB (depending on the
measurement setup accuracy, e.g. NWA) then the Device itself can be measured.
Application Note 78 Revision 1.0
2016-02-03
Authors
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
8 Authors
Renat Rius, Application Engineer of Business Unit “RF and Protection Devices”
André Dewai, Senior Application Engineer of the Business Unit “RF and Protection Devices”
Application Note 79 Revision 1.0
2016-02-03
Authors
Wideband SP3T RF Switch for RF diversity or RF band
selection applications BGS13S2N9 BGS13S2N9
Revision History
Major changes since the last revision
Page or Reference Description of change
Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015
Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. ifx1owners.
Edition 2016-02-03
<AN_2015_02_PL32_001>
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this document?
Email: [email protected]
Document reference
IMPORTANT NOTICE The information contained in this application note is given as a hint for the implementation of the product only and shall in no event be regarded as a description or warranty of a certain functionality, condition or quality of the product. Before implementation of the product, the recipient of this application note must verify any function and other technical information given herein in the real application. Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind (including without limitation warranties of non-infringement of intellectual property rights of any third party) with respect to any and all information given in this application note. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.