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WP4Dissemination, cost calculation and exploitation
Mid-term review – M30
29 April 2015, Gothenburg (@Chalmers)
Outline
confidential
1. Introduction
2. Cost of patterning : Review
3. Next steps
Introduction
confidential
4
WP goals
confidential
o Pattern with various techniques o of litho and etcho periodic and non-periodic
o Characterise the patternso Find how to passivate them
WP2
o Fabricate thin c-Si filmso Integrate nanopatterns into solar cells
and reach record Jsc valueso Demonstrate upscalability
WP3o Evaluate industrialiability of
nanopatterningo Evaluate their costs and life cycleo Disseminate results and protect IP
WP4
o Model various nanopatterned structures and extract their Jsc
o Give guidelines of optimal structures
o Gather reliable data for modelso Define benchmark structures
WP1
5confidential
o Task 4.1 Dissemination, supervisor Imeco Task 4.2 Cost calculations, supervisor Totalo Task 4.3 Exploitation, supervisor Total
WP4
WP tasks and people to achieve themImec Ounsi El Daif, Christos Trompoukis
INL Christian Seassal
LPICM Pere Roca I Cabarrocas
UNamur
Obducat Jiawook Rizgar, Ki-Dong Lee
Chalmers Ines Massiot
Total Patricia Prod’hommeLoic Francke, Alan Ristow
6
All partners
WP4- Dissemination, cost calculation and exploitation.
confidential
Task 4.1 : Dissemination
(Imec)
Scientific conferences and publications to disseminate project results
via both academic and industrial channels
Large-media communication to provide international
visibility, including in a non-specialised audience.
Task 4.2 : Cost calculation
(Total)
Cost calculation To evaluate both the saving and the supplementary costs
induced.
Life cycle assessment To evaluate the environmental footprint of implementing the
project.
Task 4.3 : Exploitation
(Total)
Identification of routes of exploitation Evaluation of industrialization
option and development results obtained.
IP protection after careful assessment of
the merits of inventions created during the project
7
WP4- Dissemination, cost calculation and exploitation.
confidential
Deliverables
Done
On track
Trend
Delay
Task 4.1
• D4.1 Public website (T+3)
Task 4.2
• D4.2 Cost of patterning (T+24) • D4.3 Complete cost calculation of patterned cells (T+33) • D4.4 Module life cycle assessment (T+36)
Task 4.3
• D4.5 Dissemination and Use Plan (T+36) • D4.6 Final Press release (T+36) • D4.7 Dissemination kit release (T+36)
Done
Done
Technico-economical study
confidential
9
Task 4.2: Cost calculati on and life cycle assesment
confidential
Objectives: Evaluate the impact of new process(es)
Process modification• Thin layer processing• Patterning • Supplier equipment maturity• Module integration
Lower Si consomption• no wafer (ingot, cutting,…)
?
• Objectives : Evaluate the impact of new process(es) at the cell fabrication
scale
Decrease the cost
Increase the cost ?
Efficiency
10
Highlight process fl ow descripti on
confidential
Si Layer processes
Nanopatterning
Etching
NIL HCL LHL
Dry Etch
Dry Etch
Wet Etch
Thin Si Layer deposition
Dry Etch
c-Si wafer
Wet Etch
Dry Etch
Wet Etch
Electrochem
Task 4.2: Cost calculation and life cycle assesment
Wet Etch
Plasma
• At that point, no technical deadlock• First Focus on patterning• Then Thin layer process and solar cell
Thin Si Layer Transfer
11
Task 4.2: Cost calculation and life cycle assesment
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What we need at first ?o A process flow description !o A review benchmark thin cristalline silicon solar cell and standard wafer
thechnology in order to select the reference for cost evaluation.
Describe the process steps
Collect Data on capex and opex
Cost calculation
and life cycle assesment
Fabrication line model / Equipement
dvp requested
?
12
confidential
Task 4.2: Cost calculation.
Context/Assumption (based on a standard PV production line) :
• Profitable/unprofitable range, €/cell, €/kWh• Environmental footprint
Substrate size : 243.4 cm² (15.6×15.6 cm²) Throughput : 3 600 wafers/hour (wph). Productivity : the OEE (Overall Equipment Effectiveness) is a measurement of the equipment performance over its operation time. It takes into account availability, efficiency and quality delivered. The OEE is set at 0.974 which assume high quality equipment. Depreciation : a depreciation of 1% per year is calculated for 10 years. Floor space : the floor space is estimated from the process equipment data sheet. Materials/Consumables : all the materials and consumables needed for the whole process. Utilities : the amount of electricity, compressed air, cooling water relevant for the proper functioning of the process equipments. Labour: cost of Operator, Supervision, Engineering and Maintenance. Cost of yield loss : it gathers mechanical, optical or electrical loss during the process. The yield is set at an optimistic value of 99.9% for each process step. The cost of the wafer is set at 1 €. The cell efficiency is set at 20%, a realistic efficiency obtained by Solexel with 35 µm thick silicon layer.
Cost of Ownership (CoO) : financial estimate intended to determine the cost associated with the acquisition, use and maintenance of goods and services.
13
implicati ons of R&D process on the CoO accuracy :
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Task 4.2: Cost calculation and life cycle assesment
Lab-scale Industrial scale CommentsEquipments Not suitable for
high throughput in production
Automated equipment to achieve some steps of the process is not existing
Available mass production equipment with specifications as close as possible to the requirements of the process is proposed.
External equipment suppliers have been contacted to find alternative equipments needed to meet the process requirements and to get the price of these equipments.It is not possible to know the real OEE for new equipments in mass production so the same OEE is set for all of them.
Low throughput For reasons of inline productivity, the throughput of each step of the process has to be 3 600 Wph. Then several equipments are required with an impact mainly on the cost of investment and floor space.
Chemical products
The amount of chemical products at lab-scale is known for small wafer area (5×5 cm²)
At first glance, the amount of consumables is assumed to be proportional to the area of the wafer
A better assumption will be possible since a prototype on wider area is planned later in the project
Labs purchase chemical products at a higher price since lower amount is ordered.
When available, the price for higher available quantity is used.
Today, it is not possible to take into account the frequency of the supply of provisions. Consequently, it is not possible to set the quantity of product at each replenishment.
14
Nanopatt erning HCL process fl ow
confidential
Task 4.2: Cost calculation and life cycle assesment
Process stepsEquipments
Laboratory IndustrialWafer cleaning Cleaning Beaker Cleaning station
Mask deposition Triple layer deposition Pipette + Beaker Spray coating + Cleaning stationMask patterning Beads deposition Ultrasonic bath + Pipette Spray coating
Beaker + Hot plate Cleaning stationMetal deposition Electron beam assisted
evaporationThermal evaporation
Beads removal Beaker Cleaning station
Nanopatt erning LIL process fl ow
EquipmentsProcess steps Laboratory Industrial
Mask deposition SiO2 deposition PECVD PECVD
Mask patterning Resist deposition Spin coating Spray coatingDevelopment Beaker Wet bench
Key pieces equipment with high throughput not yet appeared Already existing tools with close functionalities have been considered with a fixed OEE for all equipments.
15confidential
Task 4.2: Cost calculation: HCL process
Materia
ls/ co
nsu...
Deprec
iation
Labor c
ost
Floor s
pace
Utilities
Yield lo
ss co
st01234567
Cost drivers for HCL
Cost
of o
wne
rshi
p (€
/waf
er)
Two parameters that impact the cost of this technique: The rule used to scale up the amount of the chemical products required for industrial wafer size :
• For cleaning steps, assuming a reasonable required volume three times the volume of a standard wafer instead of using a quantity proportional to the area brings down the cost decreases by 42 % down to 4 €/wafer (0.8 €/Wp).
• For the other steps of the process (triple layer, beads deposition, …), assuming saving 40% of products, lowers the cost further by 33% down to 2,7 €/wafer (or 0.6€/Wp).
Purchasing higher volumes of products cuts prices :• Available data : the ethylene glycol cost decreases from 50€/L at the lab-scale down to 3€/L when purchased by 200L unit.
cost of HCL drastically decreases from 34 €/wafer to 7 €/wafer (equivalent to 1.4€/Wp). • Not available data : depending on the chemical product and the purchased amount, the selling price may be divided by
a factor of 2 to 15. Assuming a conservative factor of 5, especially for bead solution (1830 €/L) and PDDA (45€/L), lowers the HCL cost by 27% down to 5 €/wafer (1€/Wp).
The cost driver of HCL is chemical products used for the mask deposition and patterning.
The cost ranges between 7€/wafer down to 1,5 €/wafer. Further potential decrease of chemical products cost
16confidential
Task 4.2: Cost calculation : LIL process
Mat/co
nsum
Deprec
iation
Labor c
ost
Floor s
pace
Utilities
Yield lo
ss0
0.020.040.060.08
0.10.120.140.160.18
a) Cost drivers
Cost
of o
wne
rshi
p (€
/waf
er)
0
100
200
300
400
500
600
700
800
900
1000
0.30.40.50.60.70.80.9
11.11.2
b) Impact of floor space and person/shift for laser tool(s) on CoO
Floor Space (m²)
Cost
of o
wne
rshi
p (€
/Waf
er) 80 p/shift
40 p/shift
20 p/shift
10 p/shift
1 p/shift
Assumptions on laser equipement :
Still at a lab-scale and manually operated : a very low throughput (4 wafers/hour) 900 tools to meet the throughput of a standard production line.
Specific environment such as vibration free space, highly accurate automation for optical alignment ,… Half of the initial investment cost has been added to get the final price of all laser tools.
The impact of floor space and person/shift to operate this/these tool(s) : The impact of the floor space is negligible since it is not higher than 10 % of the whole cost of the technique. The sensitivity of the CoO to manpower is higher but remains negligble : 40 × person per shift 2 × CoO.
CoO has been calculated assuming a laser exposure automation of several substrates simultaneously (batch or roll to roll line) and a manpower of 5 persons per shift and a floor space of 500 m².
The cost of LIL nanopatterning is about 0,4 €/wafer (0,09 €/Wp).
The cost driver is equipment investment.
17confidential
Task 4.2: Cost calculation : NIL process
Cost Drivers Cost(€/wafer)
Consumables 0,6Capex 0,025Labour 0,008Other reoccurring cost 0,008Yield loss 0,008
Total cost 0,65 €/wafer
240 wph
3 600 wph
USD
/w
afer
Strong impact of scale-up on CoO The cost driver are consumables Some consumable material (resist & IPS) can be change to decrease cost, depending on
technical requirement
18confidential
Task 4.2: Cost calculation : Etching
Materia
ls/ co
ns...
Deprec
iation
Labor c
ost
Floor s
pace
Utilities
Yield lo
ss co
st0
0.001
0.002
0.003
0.004
0.005
0.006 Cost drivers for Wet etching
Cost
of o
wne
rshi
p (€
/waf
er)
00.05
0.10.15
0.20.25
0.30.35
Cost drivers for RIE etching
0
0.5
1
1.5
2
2.5 Cost drivers for ICP-RIE etching
Dry etching techniques are more expensive : RIE : 0.5 €/wafer (0.10 €/Wp) ICP-RIE : 2.1 €/wafer (0.40 €/Wp)
Main cost drivers of Dry etching : Equipments : Despite the use of RIE in microelectronics, there is currently no high-throughput equipment suitable for
the PV industry. As a consequence, the investment part represents almost 50 % of the RIE etching process. Consumables are the second cost driver, especially because of the use of SF6, an expensive gas. In case of ICP-RIE, the
cost driver is clearly gas and consumables because of the use of CHF3 which is twice more expensive than SF6.
The wet etching is based on TMAH. It is the less expensive technique, about 0,016 €/wafer (0.003 €/Wp).
The cost driver of dry etching techniques are equipment investment and materials Environmental considerations by using dry etching because of the use of SF6, strong greenhouse
gas
19confidential
Task 4.2: Cost calculation
HCL_Max HCL_Min LIL NIL0
1
2
3
4
5
6
7
Cos
t of o
wne
rshi
p (€
/ w
afer
)
Yield loss Utilities Floor space costs labor Cost Depreciation Materials/Consumables
HCL_Max HCL_Min LIL NIL0,0
0,1
0,2
0,3
0,4
0,5
0,6
2
3
4
5
6
7
Cos
t of o
wne
rshi
p (€
/ w
afer
)
Yield loss Utilities Floor space costs labor Cost Depreciation Materials/Consumables
HIGHLIGHTS : All nanopatterning techniques are much more expensive than standard random wet etching (about 0,025 €/wafer). Wet etching is cost effective when compared with dry etching wet etching may be favored. As mature technique, the cost of NIL (0,65 €/wafer) remains higher than the standard wet etching for random patterning
but, especially with some potential reduction, it makes this mature technique still relevant with a short time to market. Since LIL seems a promising technique , it may be used to reduce NIL CoO by producing the master stamp HCL has a cost reduction potential by reducing the chemical products consumption.LOWLIGHTS : Development of new tools is needed for HCL and LIL as mass production techniques. High uncertainty when comparing HCL and LIL with more mature techniques such as NIL. fair comparison between HCL
and LIL on one side and NIL on the other side is then tricky
HCL_Max HCL_Min LIL NIL0,0
0,1
0,2
0,3
0,4
0,5
0,6
2
3
4
5
6
7
Cost
of o
wner
ship
(€ /
wafe
r)
Yield loss Utilities Floor space costs labor Cost Depreciation Materials/Consumables
HCL_Max HCL_Min LIL NIL0,0
0,1
0,2
0,3
0,4
0,5
0,6
2
3
4
5
6
7
Cost of ownership
(€ / wafer)
Yield loss Utilities Floor space costs labor Cost Depreciation Materials/Consumables
Better understanding of the cost drivers and the availability of production-ready equipments. The cost reduction thanks to a lower consumption of silicon: around at least 1 €/wafer to 2 €/wafer.
20
On going and Future work
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• Complete/Modifie the process flow for each process steps All partners input
• Process for thin cristalline film : Thin layer deposition process Thin layer transfer process Which technology ?
• Complete cells / modules
Which cells stack ? Not at the module
Describe the process steps
Collect Data on capex and opex
Cost calculation
and life cycle assesment
Fabrication line model / Equipement
dvp requested
nanophotonics for ultra-thin crystalline silicon photovoltaics
This project has received funding from the European Union’s Seventh Programme for research, technological development and demonstration under grant agreement No 309127
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Nanopatt erning HCL process fl ow
confidential
Task 4.2: Cost calculation and life cycle assesment
Process steps Equipments Consumables Unit price (€/unit)
Quantity(5× 5 cm²)
Unit
Cleaning Cleaning Beaker Acetone 6 800 5.10-6 m3
Isopropanol 6 800 5.10-6 m3
Water 3 2.10-5 m3
Mask deposition Triple layer deposition
Pipette + Beaker PDDA 45 000 1.10-8 m3
PSS 670 2.10-5 kgACH 1 5.10-5 kgWater 11.103 3.10-6 m3
Water (rinsing) 11.103 90.10-6 m3
Mask Patterning Beads deposition
Ultrasonic-bath + Pipette
Beads solution 18.3.106 1.3.10-8 m3
Beaker + Hot plate
Ethylene glycol 49 800 5.10-5 m3
Water (rinsing) 11.103 100.10-6 m3
Mask deposition on Beads
Evaporator Aluminum 2.6 3,4.10-8 kg
Beads removal Beaker Acetone 6 800 1.10-4 m3
Water 3 2.10-5 m3
Table 3: Materials and equipments used for HCL process (confidential data).
Process steps Equipments Consumables Unit price (€/unit)
Quantity(15.6× 15.6 cm²)
Unit
Mask deposition
SiO2 deposition
PECVD-SiO2 SiH4 100 0,8.10-5 m3
N2 15,3 5.10-4 m3
O2 7,3 2.10-3 m3
Patterning Mask
Resist deposition
Spin coating Negative Photoresist
127 3,8.10-10 L
Exposure UV Laser
Development
Resin developer
Microposit Developer
144 10-5 L
Table 5: Materials and equipments used for LIL process.
23
Nanopatt erning HCL process fl ow
confidential
Cleaning step (AIP)
Polymer deposition pipette
Beads deposition by self-assembly
Ultrasonic
bath
Hot ethylene glycol rinsing
Hot PlateBeaker
Water rinse
Mask depositionElectron beam assisted
evaporation
Beads removal by Lift-off
Ultrasonic bath or Tap
Not expensive but no equipement at industrial scale
Process Item Price/unit* Unit Nb of unit*
Total price (Euros)
Cleaning Acetone 0.0068 mL 5 0.034
IPA 0.0068 mL 5 0.034
Water 0.011 mL 20 0.22
Self-assembly
PDDA 0.045 mL 0.01 0.00045
PSS 0.67 g 0.02 0.0134
ACH mL 0.1
Water 0.011 mL 3 0.033
Water (rinsing)
0.011 mL 90 0.99
Bead solution
18.31 mL 0.013 0.238
Ethylen Glycol
0.05 mL 50 2.49
Water (rinsing)
0.011 mL 100 1.14
Mask Aluminiumor SiO2
nm 50
Acetone 0.68 mL 100
Water 0.22 mL 20
Tape
Water rinse
* Given for a 5*5 cm cell, R&D partners
Task 4.2: Cost calculation and life cycle assesment
Process flow Equipments requested Consummables/fluids requested
24
confidential
Task 4.2: Cost calculati on and life cycle assesment
Context/Assumption :o Substrate size : 243.4 cm² (156×156 mm)o Throughput : 3 600 wafers/hourso Efficiencyo Yield, Average up time
Life cycle assessment
o Building/Facilities (per year)o Human ressources (per year)o Equipement/Investissment (nb per fab)
o Components (per wafer)o Consummables/Fluids (per wafer)o Energie (per wafer)
Cost item
• Profitable/unprofitable range, €/cell, €/kWh• Environmental footprint
25
confidential
Benchmark
Task 4.2: Cost calculati on and life cycle assesment
Wafer Ultra-thin c-Si Thin layer PhotoN voltaic
Panasonic 1366 Technologies
Panasonic Solexel Crystal Solar
First Solar
(CdTe)
EPFL (µSi)
Efficiency 25.6 % 17% 24.7% 20.62% 16% 20,4% 10,7% 15% - 21.3%
Surface (cm²) 143.7 243.4 101.8 243.4Thickness (µm) 200 98 35 50 1.8 1-40Throughput 3600*
Wafers/h.3.2MW/y. > 300
Wafer/h.Cost $0.4/W
$1.4 (Cell 2011)
$0.08/W (Cell Target)$0.50/W
(Module Target)
$0.42/W (Module)
$ 0.52/W (Cell
achieved)$0.40/W (Module Target)
* Fairly standard throughput
• Competitive field with some relevant results not any more at a lab research stage• PhotoNvoltaic on track
26confidential
Task 4.2: Cost calculation
00.010.020.030.040.050.060.070.080.09
0.1
Cost drivers for HCL
HCL_Max HCL_Min LIL NIL0,0
0,1
0,2
0,3
0,4
0,5
0,6
2
3
4
5
6
7
Cos
t of o
wne
rshi
p (€
/ w
afer
)
Yield loss Utilities Floor space costs labor Cost Depreciation Materials/Consumables
27confidential
Task 4.1 Disseminati onLarge media communication http://www.photonvoltaics.org/
28confidential
Task 4.1 Disseminati onLarge media communication http://www.photonvoltaics.org/