WS14 3phase IGBT v2014

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3 phase Inverter using IGBTs

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IntroductionThis lab will show the development of a 3 phase Inverter using State Control

methods with associated dead time. The main purpose is to look at different

levels of IGBT modeling using the System level IGBT and then going thru the

process to characterize a specific IGBT device using Simplorers Device

Characterization tools.

Note the System level IGBT was created to give the user a quick way to

evaluate switching circuits using IGBTs at the system level. This IGBT provides a

quick way to control the switching using logic control and yet still exhibits basic

characteristic of an IGBT device.

In the next part of this lab, a more detailed IGBT will be modeled. Note there are

3 levels of IGBT modeling that is possible (Average, Basic Dynamic, and

Advance Dynamic). The Average IGBT model was created for system

simulations where the thermal aspects of the IGBTs need to be evaluated. It

expands on the electrical characteristic and provides two different approaches for

the power dissipation (Average and Dynamic ) that feeds the thermal network.

The Basic Dynamic level adds more detailed modeling for the electrical dynamic

behavior, and the Advance Dynamic adds even more detailed modeling of the

IGBT models dynamic behavior (see Simplorers help for further information).

Part 1: Using System level IGBTsThe following 3 phase inverter will be created


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Using the previous schematic as a guide line for placement of components,

construct the circuit as follows

Invoke Simplorer, change the name of the Project to be 3 phase Inverters and

the default Design to be 3 phase inverter w system IGBTs

File -> Save As (to desired location)

Add 3 voltage sources (Sine, 120V RMS, 60Hz, Spice compatible, phased shifted

by 120 degrees 0, 120, 240)

Add an exponential function block (this will be used to characterize the rectifier

diodes) Basic Elements/Tools/Characteristics/EXP: Exponential Function

Double click on the block, select the Output/Display tab, choose not to

show the output pin.

Select the Parameters tab, note values, leave at default values


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Add 1 system level diode, define the Parameters for the diode to be represented

by the Exponential Function previously defined EXP1.VAL

Copy the Diode and paste it 5 more times in a 3 phase bridge rectifier

configuration as shown below

Add a DC link Capacitor with value of 1mF

Add a ground node to the DC rectified output as shown


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Add 1 system level IGBT and 1 more system level diode, connect them in parallel

and move their names as shown below. Position the diode connection points to

be 4 diode lengths away from the capacitor as shown (this is done for later

expansions of the circuit using a characterized IGBT with gate drive and thermal

networks)

Insert a line that is equal to the distance of the 4 diodes to be used for a

guideline, then remove the 4 diodes

Draw Draw Draw Draw ----> Primitive > Primitive > Primitive > Primitive ----> line > line > line > line (note this is not a wire)

Select the line, copy and paste it end to end as shown below to set the

spacing for the other IGBTs that will be added


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Select the IGBT/Diode pair including the connection between them, copy and

paste the combination 5 more times using the lines as a guideline for spacing.

NOTE copy them from left to right top, then left to right bottom so that the names

of the IGBTs follow the pattern shown below

Note also to make sure the vertical distance between the positive and negative

DC output is approx 2 times the length of one of the lines as shown below

Remove the lines then File File File File ----> Save> Save> Save> Save

Add 3 current meters, one Induction motor (Basic Elements/Circuit/Electrical

machines/Induction Machine/IM : Induction Machine), connect them and the

IGBT sections as shown below, File File File File ----> Save> Save> Save> Save

IGBT1 IGBT2 IGBT3

IGBT4 IGBT6IGBT5


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Add a torque load/source to the Induction machine (Basic Elements/Physical

Domains/Mechanical/Velocity-Force-Representation/Rotational_V/F_ROT:

Torque Source)

Leave both the Induction Machine and Torque source at default values, connect

as shown below (note when adding ground to the Torque source, it will change

symbols automatically to reflect mechanical ground)

Add a voltage meter between lines to measure the line to line voltage as shown

below (change its name to be VM_line2line) File File File File ----> Save> Save> Save> Save

Induction Machine Defaults


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Add a sine reference blocks that will be used in the control scheme (Basic

Elements/Tools/Time Functions/SINE: Sine Wave)

Double click on it, and select the Output/Display tab, select to not show output

pin

Select the Parameters tab and set Amplitude = 1, Frequency = 60, name = IPA

Select the SINE block, copy and paste it 2 more times

Edit one of the copied versions, and change the name to IPB with phase of

-120 deg

Edit the last one and change the name to IPC with phase of 120 deg


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Add a triangular time function (Basic Elements/Tools/Time Functions/TRIANG:

Triangular Wave)

Edit this block, set to not show output pin, set Amplitude =1, Frequency = 2000,

name it TRIG

Arrange the blocks on the schematic as shown below

The next steps will set up the State Logic shown below which will be used to

define the turn on and turn off times of the IGBTs


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The first State Logic section will control IGBT1 and IGBT4

Add 4 States with input/output pin (Basic Elements/States/STATE_11: State 11)

Add 4 transitions from same library as above, arrange them as shown above

(NOTE the directions of the transitions)

Edit the names of each as shown above, place names inside the loop

Double click on each and define as shown (Note edit the States before Note edit the States before Note edit the States before Note edit the States before

Transitions). Transitions). Transitions). Transitions). Note when simulation enters a State, it will set the variables igbt1

and igbt4 to 1 or 0, these variables will be used as logic gate drives for the

associated IGBT (to be set up later in the lab) if set to 1 it turns the associated

IGBT on. (Activate State box selected for blue dots)(Activate State box selected for blue dots)(Activate State box selected for blue dots)(Activate State box selected for blue dots)

Note the dead time (created to make sure that an IGBT in the top section is not

on at the same time one of the bottom IGBTs is on, thus causing a short circuit

on the DC link) is implemented using the delay DEL function in the States.

For example in the State Off41 shown above, both variables igbt1 and

igbt4 are set to 0 (therefore both associated IGBTs will be turned off when

this state is entered). The simulation will stay in this state until the variable

TV1 goes high (after the delay of 5uS) File File File File ----> Save> Save> Save> Save

NOTE edit StatesNOTE edit StatesNOTE edit StatesNOTE edit States

Before Before Before Before

TransitionsTransitionsTransitionsTransitions


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Note to create the other two State Logic sections, can use the previous section

created as a starting point.

Zoom out, Select the entire previously created State Logic section, copy and

paste it just below and slightly to the left of the first section, edit each section as

shown below (note need to double click on each to edit the equations)

Copy the original State Section again, and paste it below and slightly to the right

this time, edit this new section as shown below, then File File File File ----> Save> Save> Save> Save








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Add text 3-Phase Inverter using System level IGBT and motor load at the top,

set the font to 34

Set up the TR analysis; Tend = 80mS, Hmin = 50nS, Hmax = 1mS

Add two rectangular plots, one to display all 3 phase currents via the current

meters, and one to display the line to line voltage via the voltage meter

Select each plot and edit to view the Header Name instead of the legend, Edit the

Header names in the project manager window to be Phase Currents and Line

to Line Voltage, change the font size of the Header to be 36


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The final set up is to assign the gate drive signals to each IGBT based on the

State Control.

Double click on each IGBT, unselect the Control Signal Use pin, then give it the

variable name that gets assigned in the State Control (ie for IGBT1, set the

Control Signal to be igbt1 (which gets set to 1 or 0 in the State Control Logic),

if this variable gets set to 1, it will turn on that IGBT.

Run the TR analysis, then edit both plots X axis to display from 50mS to 80mS,

set the line to line voltage Y axis to be from 300V to -300V, set the phase

currents Y axis to be from 25 to -25A, the results should appear as shown below

File File File File ----> Save> Save> Save> Save


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IGBT CharacterizationIn this section, the IKW75N60T IGBT from Infineon will be characterized based

on its data sheet. It will be tested, evaluated with external thermal heat sink

model, and then used in the 3 phase inverter motor drive circuit previously

created.

NOTE all the files required for this characterization section is located in the

IKW75N60T_Data folder (See Instructor for folder location), the data sheet to

be used is IKW75N60T.pdf

Curves from the data sheet can be made into individual bitmap files by

using a screen capture tool or Prnt Scrn when viewing the .pdf data sheet.

Prnt Scrn, paste to powerpoint, save picture as bmp, edit in Paint

The required curves have been pre-captured as .bmp files and are located

in the IKW75N60T_Data folder

In this lab, the Average IGBT underlining model will be used

Required input data for Average IGBT characterization includes:

Transfer Characteristic, Ic vs Vge (at Tnom and Tdifferent)

Output Characteristic, Ic vs Vce for (Full and Semi Saturated Branch for

Tnom and Tdiff)

Freewheeling Diode Characteristic, If vs Vf (at Tnom and Tdifferent)

IGBT Transient Thermal Impedance, Zthjc vs time or thermal circuit

Freewheeling Diode Thermal Impedance, Zthjc vs time or thermal circuit

Add a new design to the 3 phase Inverters project, name it IGBT Avg Char

The following section will show how to use the SheetScan capability in Simplorer

to capture the data from the Manufactures Data sheet (converted to .bmp files)

for later use in the characterization wizard.

Select the Menu, Project Project Project Project ----> Datasets> Datasets> Datasets> Datasets

In the Datasets: dialog, select SheetScan


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In the SheetScan application, from the menu, select Picture Picture Picture Picture ----> Load picture > Load picture > Load picture > Load picture and

Load one of the already captured .bmp files from the data sheet

TransferCharacteristic.bmp.

Use Zoom functions to size and fit the picture

Select Options Options Options Options ----> Settings> Settings> Settings> Settings, and Check Adapt to picture box to ensure proper

aspect ratio.

Zoom functions


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In the SheetScan Tool Create a new Coordinate System by selecting from the

Menu, Coordinate System Coordinate System Coordinate System Coordinate System ----> New > New > New > New

Allows set up of a reference system for recognizing and scaling the data.

Select Point1 and carefully select corresponding corner locations on the plot this

defines the coordinate system and scale. Repeat for Point2 and Point3

1 2 3

Enter corresponding Data points for

X-Value and Y-Value of each point.

Click OKOKOKOK.4

1

2

3


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Now that the Coordinate system is defined, Create a new Curve to trace out the

first of the two curves.

Select from the Menu, Curve Curve Curve Curve ----> New> New> New> New.

Assign Name and Units in the Curve Settings Dialog Box for both axis (note this

first curve will be for the Tj = 25 degree C curve)

X-Axis

Name: VGE

Unit: Volts

Y-Axis

Name: IC T=25C

Unit: Amps

Check Monotonicity in X


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With the Mouse, select approximately 15 to 20 points for the Tj=25C curve,

starting and ensuring a good quantity around the knee of the curve.

To add another curve, again select Curve Curve Curve Curve ----> New> New> New> New, and define X-Axis and Y-Axis

as shown below. Note another tab should appear with second set of data.

Again select approximately 15 to 20 points for the Tj=175C curve, ensuring a

good quantity around the knee of the curve.


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The two sets of curves can be selected and inspected from the pull down menu in

the upper left. Note can right click in the plot to Select (and move) point, as well

as Append or Delete points

This data can now be saved in two ways (Sheet Scan tool format and each

individual curve data format to be used in the IGBT Characterization tool)

Click File File File File ----> Save As> Save As> Save As> Save As, and save as transfer_class.ssf, this will save the

information in the Sheet Scan tool format

To export the separate data for each curve, select the 25C curve first in the pull

down menu, then select File File File File ----> Export> Export> Export> Export, select Current Curve, click on File,

enter Filename (transfer_25C) and the type

i.e. (.mdx for Simplorer), and select Separator Semicolon.

Select the 175C data from the pull down menu and repeat to export the 175C

data and name it transfer_175C

Note all curves that are needed for the IGBT characterization tool have already

been Scanned and are also saved as .mdx files in the IKW75N60T_Data folder.

This section was used to show the process of creating these files only, therefore

close out the scan sheet window and just delete these two close out the scan sheet window and just delete these two close out the scan sheet window and just delete these two close out the scan sheet window and just delete these two mdxmdxmdxmdx files createdfiles createdfiles createdfiles created


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Using the IGBT Characterization toolTo Characterize a new device, select the menu,

SimplorerSimplorerSimplorerSimplorer Circuit Circuit Circuit Circuit ----> Characterize Device > Characterize Device > Characterize Device > Characterize Device ----> Semiconductors> Semiconductors> Semiconductors> Semiconductors

Select from the Device Type pull down menu, Average IGBT, click OK .

Note: To open an already characterized device, check the Continue device

characterization radio button, and select file name (device.ppm)

This opens the first of several windows of the Characterization process.

NoteThe Manufacturer pull down allows for different manufacturers

definitions for the Basic Dynamic characterization, thus it will not be used

for the Average IGBT Characterization.

Enter Component Name

(IKW75N60T_class)

Add comments

Click Next


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The second window is for the Nominal Working Point Values.

Note at any time during the characterization you can press F1 for the help menu

with explanation and definition of inputs.

Note for section [2/12], the following definitions are listed

Nominal Collector Emitter Blocking Voltage [V]

This will be listed as Vcc in the test conditions area of the switching

characteristics section of the data sheet.

Nominal Collector Current [A]

Listed as Ic in the switching characteristics test conditions.

Nominal Reference Temperature [C]

This will generally be listed as Tc for the maximum temperature test

conditions for the switching characteristics, for example 175C.

Collector-Emitter Saturation Voltage under Nominal Condition [V]

Listed as Vce sat in the switching characteristic test conditions. This

field is disabled for Basic Dynamic IGBT characterization.

On-Switch Gate-Emitter (Drive) Voltage [V]

Listed as Vge in the switching characteristics test conditions.

Off-Switch Gate-Emitter (Drive) Voltage [V]

This parameter may be listed in the switching characteristics test

conditions; however, it often is not. A rule of thumb is to use the

negative of the Vge(On) value listed above.

The values should be as shown below, Click Next


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For this model, check the Disable Breakthrough Model, Click Next

For the Half-Bridge Test Circuit Condition, use these values (External Gate

Resistance = 5, others set to 0), and again note instructions from the help menu

using F1. Click Next


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The transfer characteristic, Ic = f(Vge) [5/12] uses data obtained from the Sheet

scan utility.

For this Lab, the data sheet curves have already been scanned and saved as

.mdx files in the IGBT Characterization folder IKW75N60T_Data.

Click Temp drop down menu, and select 175.

Type in Vce value of 20.

Click on the Open Folder icon to load the Characteristic Data


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Browse the IKW75N60T_Data folder with the already defined .mdx files.

Select the file: Transfer_175DegC.mdx

Next, add a new Characteristic by clicking the Add New Characteristic button in

the upper right corner.

Note that a second channel appears.

Under Boundary Conditions, define the Temp of 25 deg C, and Vce = 20.

Click the Open folder icon, and select the filename Transfer_25DegC.mdx

to load the data.

Note that now both Ch.01 and Ch.02 are populated with the transfer data.

For the Fitting Characteristic Order, select from the pull down menu:

Nominal Temperature as Ch.01 175.0 C,

Different Temperature as Ch.02 25.0 C.

Click on Start Fitting

Follow results.

Click Next


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In the Output Characteristic, four curves will be input, a Full Saturated Branch

(Vge=20), and a Semi Saturated Branch (Vge=11), at Tnom=175 degC, and

Tdiff=25 degC.

Define 175 Temp, Vge=20.

Click the Open Folder Icon, select Output_20v_175degC.mdx


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Click the Add new Characteristic icon in the upper right corner

Select Temp to 175, and change Vge to 11, click the Open Folder icon and

select file Output_11V_175degC.mdx.

Repeat this for Ch.03 20V 25degC, and Ch.04 -11V 25degC.

Specify The Fitting Characteristic Order for Full and Semi Saturated Branches at

Tnom and Tdiff.


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Note that all four channels are now populated with the Output data.

Click on Start Fitting

Follow results

Click Next

Similarly, for the Freewheeling Diode, enter the data for Temps 175 first, then 25

deg C, Define also the Fitting Characteristic Order as shown, Start Fitting.

Use files FreewheelingDiode_175degC.mdx, FreewheelingDiode_25degC.mdx

Click Next


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The data for the IGBT thermal model may be entered from the transient curves,

or the partial fraction model coefficients if available.

Select Partial Fraction via the pull down menu, enter the data for the partial

fraction coefficients from the data sheet

Note the selection of the Use external network box, this will allow the creation of

an external thermal network that represents the heat sink or package

Start Fitting, Click Next

The coefficients can also be entered for the Freewheeling Diode Thermal Model

in similar fashion. Click Next when done


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In the Energy Characteristic window, Enter for the Nom row (175C) the Eon and

Eoff from the Data sheet, then select Extraction, Click Next

The validation step allows the user to input a test case and verify that the energy

model is correct.

Select the Add new Point icon in the upper right corner. And add the

following conditions

Click Validate.

The calculations based on the model should match the Energies, Click Next


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The final section [12/12] shows the calculated parameters that characterize the

IGBT model.

Once completed, this model can be saved in several ways

1) select the Create SML button, this will save the model in *.sml format

(simplorer model language) and could be sent to others for import into

simplorer (save as IKW75N60T_class.sml)

2) select Save Model and this will save the model in the Characterization

tool format which could be re-opened later in the tool (save as

IKW75N60T_class.ppm)

3) select Finish and this will bring the model into the present design, this

can then be exported to a personal library.

Export this model to a personal library IGBTs


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Create a test circuit for the Average IGBT modelNote the IGBT model should have been placed in the IGBT Avg Char design

previously created in simplorer

Create the following test circuit (shown below)

E1 = 400V (select Spice Compatible), R1=5, R2=5.5

E2 (Pulse, Ampl=7.5,Freq=1000Hz,Offset=7.5, Spice compatible) yields 0->15V

Thermal component from Basic Elements VHDLAMS/Physical Domain/Thermal

Cth2 (c_th=1000, t0=100 C), Rth (k = 10u), T (value=25C) NOTE Red NOTE Red NOTE Red NOTE Red

Polarity Dots positionPolarity Dots positionPolarity Dots positionPolarity Dots position

Add 3 rectangular plots (U1.TempJ_T), (U1.PinJ_T), (U1.IC, U1.VCE)

Note need to add these signals via Simplorer Circuit->Output Dialog first


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Double click on the IGBT, select the Thermal Parameters tab, and make sure

the following are set up.

Note by setting the Thermal Behavior Level to dynamic, this will simulate the

power pulses at the junction of the IGBT (U1.PINJ_T). This is the power that

feeds into the thermal networks.

Select the Electrical Parameters tab, at the bottom select the External Sync..

to be E2.V (gate drive for the IGBT)

Set up the TR analysis (Tend = 20mS, Hmin = 50nS, Hmax = 10uS)

Run the TR analysis, zoom in on the turn on time for the IGBT (IC, VCE curves)

by setting the x axis from 7.995S to 8.005S, results should appear as shown on

previous page.


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Now change the IGBT to be in Average mode by double clicking on it, select the

Thermal Properties tab, and setting the Thermal Behavior Level to average,

this will now formulate the junction power as an average value instead of the real

time power pulses as was seen in the previous simulation

Note when using average mode, need to also set TSAMPLE that is used for

the average power sample times, set to 1mS

Re-run the TR analysis and note the junction power (PINJ_T) is now represented

as the average and not discrete power pulses. Note also the temperature still

gives similar results, however is smoother due to the average mode of the power

input to the thermal network


(Average Mode)


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Adding the IGBT model into a 3 phase Inverter Motor DriveIn this section, the characterized IGBT model will be placed in the previous 3

phase Inverter Motor drive circuit that had used the system level IGBT. In

addition, a thermal network (derived from ANSYSs Icepak thermal tool) that

characterizes the thermal network for an IGBT package which contains 6 IGBTs

and diodes will be used.

Select the 3 phase inverter w system IGBTs design that was created in the first

part of this lab, copy it (Ctrl + C), then paste (Ctrl + V) a new copy into the

present project, rename the new design to be 3 phase inverter w char IGBTs

Double click on the new design to make it active

Zoom in on the system level IGBT1 in the circuit

Note since the IGBT was characterized and used in a design in the existing

project, its definitions remain available for other designs of that project, select

the IKW75N60T_class IGBT model from the Components folder and drag it

into the new design


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Delete the system level IGBT1 and its associated diode, and replace it with the

new characterized version

Add a voltage source and series resistance (5 Ohms) for the gate drive

Set the value of the voltage source to be the variable igbt1 (Note this

value will be determined from the State Control section as before), Select

the Display tab to show both EMF and value

Define the name to be Vg1 and Select the voltage source to be spice

compatible

Name the resistance Rg1

Align the components as shown below

Double click on the IGBT, name it IGBT_th1 (Select to show name)

Select the Electrical Properties tab, set the External Sync.. to be Vg1.V

Select the Thermal Properties tab, (dynamic, Kelvin, both TEMPs 25) as

shown below


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Select the entire gate drive circuit including the voltage source, resistor, wiring

and the new IGBT, copy it (Ctrl +C)

Zoom out and delete the remaining system level IGBTs, associated Diodes, and

stray wiring

zoom in the location just to the right of the IGBT that was just inserted, clean up

any stray wires and paste (Ctrl + V) the gate drive and IGBT

Note the names should change in sequence (ie Vg2, Rg2, IGBT_th2)

Change the EMF value to be igbt2

Change the IGBT External Sync.. to be Vg2.V

Repeat this process for the next IGBT section by pasting (Ctrl + V) again

Again change the EMF to be igbt3, and External Sync to be Vg3.V


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Repeat this process for the bottom IGBTs and associated gate drives

note place in the same order from left to right

Dont forget to change the EMF values and the External Sync of the IGBTs

The final results for the bottom row of IGBTs should appear as shown below


Note the system level IGBTs were turned on/off with logic levels (0 and 1),

however the characterized IGBT require real gate drive levels, therefore the turn

on values need to be 15V now.

Edit the State Control blocks and replace the 1 with 15 so when that state is

entered, it sets the value sufficient to drive the new IGBTs.

Below are the changes made to the first State Control Section, repeat for the

others

When done File File File File ----> Save> Save> Save> Save


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Import thermal network for the IGBT multi-packIn this section, the thermal network created for the IGBT multi-pack (6 IGBTs and

Diodes in a package) will be inserted into the Simplorer schematic and connected

to the thermal pins of each IGBT (Note this model was created from ANSYSs

Icepak thermal tool).

Use the menu Tools Tools Tools Tools ----> Import Simulation Models> Import Simulation Models> Import Simulation Models> Import Simulation Models, select the type to be sml and

go to the location of the Thermal_Package.sml file

Select OK for the pop up window

Under the symbol definition folder, select the Thermal_Package symbol, RMB -

> Edit Symbol (note the default symbol should appear as shown)

Remove the symbol graphics, group and move the pins apart as shown (note pin

name order)

Rotate the P5 P8 as shown below (note pin name order)


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Add the graphics for the symbol that represents the package view

Draw Draw Draw Draw ----> Image> Image> Image> Image, this will prompt for location of the IGBTpackage.jpg file

Import and size in approximation to the pins as shown

Symbol Symbol Symbol Symbol ----> Update Project > Update Project > Update Project > Update Project (this will update the symbol)

Close the symbol editor window

Move the title text to make room for the symbol at the top of the schematic,

and insert the Thermal_Package component from the Components

definitions folder

Note place the component so that the P5 pin is directly over the middle

IGBT thermal pin as shown below


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Connect pins P6 thru P8 to the IGBT thermal pins as shown below

Connect the rest of the thermal pins as shown below

Add a Temperature source from

Basic Elements/Physical Domains/Thermal

Set it to 25C and connect it to the

P_REF pin

Add a Thermometer measurement from

Basic Elements/Measurement/Thermal

Connect it to the P1 connection

NOTE the thermal connections could also

Be connected via

Draw Draw Draw Draw ----> Page Connectors > Page Connectors > Page Connectors > Page Connectors to eliminate

The thermal wiring if desired



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Recap so far:

Created a new characterized Average IGBT model with thermal pins

Replaced system level IGBTs in Inverter Motor Drive with new IGBTs

Added additional gate drive circuit required for each

Changed State Control to create 0 to 15V gate signals

Added thermal network representing an IGBT multi-pack

Added thermal measurement for the IGBT_th1 connection at P1

Add signal (TEMPJ_T Junction temperature) for IGBT_th1 in SimplorerSimplorerSimplorerSimplorer Circuit Circuit Circuit Circuit ----

> Output Dialog> Output Dialog> Output Dialog> Output Dialog

Add a new Rectangular plot, chose to plot IGBT_th1.TEMPJ_T and thermal

measurement THM1.T

Change the Change the Change the Change the HminHminHminHmin to 10nS to 10nS to 10nS to 10nS and run the TR analysis, Note simulation time will

greatly increase over using the system level IGBT due to the more detailed IGBT

and Thermal network (approx 10 min)


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Open the thermal plot in the Results section, and adjust both Y axis to be the

same (fixed at 296 to 304), change title of plot, it should appear as shown below

Change Title of Circuit to be 3-Phase Inverter using Characterized IGBT and

motor load


Date post:	28-Sep-2015
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WS14 3phase IGBT v2014

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