XIS Calibration on the GroundXIS Calibration on the GroundStatus ReportStatus Report

K. Hayashida (Osaka University) aK. Hayashida (Osaka University) and the XIS-team nd the XIS-team

XIS ComponentsXIS Components XIS-SensorsXIS-Sensors

CCID41-FI CCDCCID41-FI CCDEU (Engineering Unit)EU (Engineering Unit)FM FM FI0FI0,,FI1FI1,,FI2,FI3FI2,FI3

• CCID41-BI CCDCCID41-BI CCD• FM FM BI0BI0,,BI1BI1

AE/TCEAE/TCE FM AE/TCE01,23FM AE/TCE01,23 EM AE/TCEEM AE/TCE

DEDE FM 4PPU+MPUFM 4PPU+MPU

XRT

SensorAE/TCE

to DPMPU

PPU

PPU

Bonnet

Base

DE

FM Spare before LaunchFM Spare before Launch

Calibration Task ShareCalibration Task ShareComponentsComponents LocationLocation X-ray SourceX-ray Source QE referenceQE reference

Chip levelChip level CSR/MITCSR/MIT Fluorescent X-rays (C,O,Fluorescent X-rays (C,O,F,Al,Si,P,Ti,Mn,Cu)F,Al,Si,P,Ti,Mn,Cu)

ACIS chips ACIS chips calibrated at calibrated at BESSYBESSY

Camera Camera without OBFwithout OBF+FM AE+FM AE

OsakaOsaka Grating SpectrometerGrating Spectrometer0.2-2.2keV0.2-2.2keV

Polypro-window Polypro-window Gas PC & XIS-Gas PC & XIS-EUEU

KyotoKyoto Fluorescent X-rays (Al,CFluorescent X-rays (Al,Cl,Ti,Mn,Fe,Zn,Se)l,Ti,Mn,Fe,Zn,Se)

Window-less Window-less SSDSSD

OBFOBF Synchrotron Synchrotron FacilityFacility

Synchrotron X-rays + moSynchrotron X-rays + monochrometernochrometer

(Transmission (Transmission measurement measurement with PIN diode)with PIN diode)

Camera Camera onboard the onboard the satellitesatellite

ISAS/JAXAISAS/JAXA 55Fe55Fe

XIS Data ReductionXIS Data Reduction

Frame Data /8secFrame Data /8secDark-level SubtractionDark-level SubtractionEvent Pickup (PH(E)>Event Threshold)Event Pickup (PH(E)>Event Threshold)5x5 mode, 3x3 mode or 2x2 mode 5x5 mode, 3x3 mode or 2x2 mode

Event dataEvent dataCharge Trail CorrectionCharge Trail CorrectionGrading / PHA-reproduction for PH(i)>Split ThGrading / PHA-reproduction for PH(i)>Split Th

resholdresholdPHA-dependent Split Threshold for BIPHA-dependent Split Threshold for BI

Bad Columns FilterBad Columns Filter Spectrum / Image / Light CurveSpectrum / Image / Light Curve

Onb

oard

DE

On

the

grou

nd

XIS Response depends on the reduction procedure

Event Grades Event Grades Grades 02346 are used as X-ray events.Grades 02346 are used as X-ray events.

※

grade0

grade1

grade2

grade3

grade4

grade5

grade6

grade7

BI1BI1 　　 Mn K incidenceMn K incidenceＰＨ（２）ＰＨ（２） = preceding pixel = preceding pixel ，，ＰＨ（７）ＰＨ（７） =trailing pix=trailing pix

elel

PH [ADU] PH [ADU]

PH [ADU]PH [ADU]

Near readout node

Far from readout node

Amount of Charge in the TrailAmount of Charge in the Trail

ＢＩ１

PH(7

)Cen

ter [

AD

U]

CTI = (4.5±0.3)×10 [ /Transfer ]-6

CTI estimated from this trail

Mn K

Number of V-Transfer in the Imaging Area

*) temperature dependence was observed

Incident X-ray Energy Dependence Incident X-ray Energy Dependence

VCTI= (1.72 ・ 10 )×E－ 0.5－ 4

HCTI= (6.06 ・ 10 )×E－ 0.5－ 4

We can tell the amount of charge deposited in PH(7) and PH(5) => Charge Trail Correction

電荷漏れ補正後の電荷漏れ補正後の PH(2)PH(2) 、ＰＨ（７）の波高分布　（Ｍ、ＰＨ（７）の波高分布　（Ｍｎ　Ｋ）ｎ　Ｋ）

PH [ADU] PH [ADU]

PH [ADU]PH [ADU]

PH [ADU] PH [ADU]

PH [ADU]PH [ADU]

Effects of Charge Trail CorrectionEffects of Charge Trail Correction

Correct Grade Branching Ratio and PH()Correct Grade Branching Ratio and PH()Reduce Grade7 events due to Charge Trail. Reduce Grade7 events due to Charge Trail.

10%-20% increase in Grade02346 ratio at 10%-20% increase in Grade02346 ratio at high energies.high energies.

Restore Non-uniformity in effective QE.Restore Non-uniformity in effective QE. (Partial) Restoration in the Energy Scale.(Partial) Restoration in the Energy Scale.

Traps with Other time scales are not negligible. Traps with Other time scales are not negligible.

電荷漏れ補正後のグレード分岐比　（ＦＩ電荷漏れ補正後のグレード分岐比　（ＦＩ２）２）

バッドコラム除去

電荷漏れ補正後のグレード分岐比　（Ｆ電荷漏れ補正後のグレード分岐比　（ＦＩ２）Ｉ２）

電荷漏れ補正後のグレード分岐比　（Ｂ電荷漏れ補正後のグレード分岐比　（ＢＩ１）Ｉ１）

バッドコラム除去

電荷漏れ補正後のグレード分岐比　（Ｂ電荷漏れ補正後のグレード分岐比　（ＢＩ１）Ｉ１）

Optimization of Split Threshold for Optimization of Split Threshold for BI1BI1 G02346 event numberG02346 event number FWHM (eV)FWHM (eV)

Spth (ADU)

PHA-dependent SpThPHA-dependent SpTh

4

6

8

10

12

14

16

0.1 1 101

spth_20050309

5percent_plus2adu3percent_plus2adu97%/spth=20ADU0.5%/ADU

y = 9.6236 + 1.6084log(x) R= 0.898

y = 10.359 + 2.2075log(x) R= 0.93167

y = 9.577 + 2.7211log(x) R= 0.97172

y = 11.313 + 3.3202log(x) R= 0.96443

Ex(keV)

Bad (CTE) ColumnsBad (CTE) Columns Bad CTEBad CTE

Typically long trail in each event.Typically long trail in each event. Sometimes flickering pixel is observed.Sometimes flickering pixel is observed. Rows near the readout node can be used.Rows near the readout node can be used.

Identification logic without accumulating Identification logic without accumulating 10^7events was developed. 10^7events was developed. EU= 21 bad columns/chipEU= 21 bad columns/chip FI0=14, FI1=12, FI2=17,FI3=24FI0=14, FI1=12, FI2=17,FI3=24 BI0=23, BI1=50BI0=23, BI1=50

How should we do for adjacent columns ?How should we do for adjacent columns ?

X-ray image (number of events /pixel)

バッドコラム　その１バッドコラム　その１ (1) BAD CTE / Trail Column

PH22 PH7 PH0 PH2 PH11 ACTX ACTY V 25 55 381 271 1 / 668 325V 27 61 1029 4 -1 / 668 336V 30 64 1490 -2 -1 / 668 239V 24 54 1471 1 1 / 668 729V 22 62 1043 164 -2 / 668 239V 22 44 1672 1 1 / 668 221V 32 145 1316 3 0 / 668 570

<PH[7]-PH[2]> で判別可能 (e.g. >8AU)

バッドコラム　その２バッドコラム　その２(2)BAD CTE Columns

PH22 PH7 PH0 PH2 PH11 ACTX ACTY V 189 393 551 486 6 / 238 897V 4 6 1565 7 0 / 238 97V 179 353 549 346 3 / 238 798V 0 5 1548 3 2 / 238 171V 109 293 498 335 4 / 238 610V 204 394 565 459 8 / 238 919

PH[7]>SplitTH(e.g.20) && PH[2]>SplitTH(e.g.20) のイベントの割合（ e.g. >0.2) で判別可能

バッドコラムその３バッドコラムその３(3) Flickerging Pixels

PH22 PH7 PH0 PH2 PH11 ACTX ACTY V 26 74 81 42 17 / 51 879V 1 5 58 1 -3 / 51 262V -1 -2 54 2 3 / 51 262V -1 3 75 1 1 / 51 262V 0 671 945 2 0 / 51 272V 1 2 1779 1 2 / 51 717

ピクセル毎のイベントの頻度で判別可能 (e.g.>0.1c/frame)

1

101

102

103

104

0 500 1000 1500 2000

BI1 segB

BI1b_nobc3BI1b_bc1BI1b_bc3-bc1

PHA(ch)

1

101

102

103

104

0 500 1000 1500 2000

BI1 segB

BI1b_nobc3BI1b_bc1BI1b_bc3-bc1

PHA(ch)

1

101

102

103

104

0 500 1000 1500 2000

BI1 segB

BI1b_nobc3BI1b_bc1BI1b_bc3-bc1

PHA(ch)

Kyoto Cal Kyoto Cal SystemSystem

Fluorescent X-rays (AFluorescent X-rays (Al,Cl,Ti,Mn,Fe,Zn,Se)l,Cl,Ti,Mn,Fe,Zn,Se)

Windowless Si-SSD is Windowless Si-SSD is used as the reference used as the reference counter, assuming 10counter, assuming 100% efficiency >1.5keV0% efficiency >1.5keV

XIS FI-CCD XIS FI-CCD QE=96%@4.5keVQE=96%@4.5keV is a is assumedssumed

Detector Chamber

Manson Soft X-ray Generator

Hetrick Spectrometer

Calibration Facility in the Osaka Calibration Facility in the Osaka Clean Room Clean Room

Dispersion (Grating) Dispersion (Grating) SpectrumSpectrum

X-ray imageX-ray image

O-Kα（ 0.53keV ）

C-Kα(0.28keV)

X-ra

y en

ergy

Number of events/columns

Dispersion direction

projection

FWHM ～ 5eV

Line profile against O-K line incidenceLine profile against O-K line incidence Astro-E1 (FI) XISAstro-E1 (FI) XIS

5 kV

PHA(ADU)XIS1 (H.Katayama master thesis)

FI2

Astro-E2 (FI) XISAstro-E2 (FI) XIS

Line Profile model（１）　 Main Peak ：

Absorption in Depletion Layer（２）　 Sub Peak ： Lost

charge below Split-threshold（３）　 Triangle Comp. ：

Channel Stop origin（４）　 Constant Comp. ：

Partial absorption in SiO2

parameters ：T1 (normalization), C1(center), S1(sigma)

T2 (relative to T1), C2(spth/2, fixed), S2 (1.78×S1, fixed)

T3 (relative to T1), F3( 三角形の幅 , 0.5×C1)

T4 (T1 で規格化した面積 ) 　→　フリーパラメタ 6 個 でフィット

F3

BI structure

Line profile for FI1 sensor

T2=0.033, T4=0.0052 T2=0.020, T4=0.0045 (Seg.B)

O-K lineE=0.525keV

Se-L lineE=1.379keV

Line profile for BI1 sensorO-K lineE=0.525keV

T2=0.19, T4=0.015 T2=0.071, T4=0.011 T2=0.078, T4=0.016

Al-K lineE=1.487keV

C-K lineE=0.277keV

スペクトルの比較スペクトルの比較FI2 g02346

カウントカウント数 数 エネルギー分解能 エネルギー分解能 [e[eV]V]

補正前補正前 422615422615 134.3±0.2134.3±0.2補正後補正後 422923422923 134.4±0.2134.4±0.2補正＋バッドコラム除去補正＋バッドコラム除去 415933415933 133.7±0.2133.7±0.2

スペクトルの比較スペクトルの比較FI2 g02346

カウントカウント数 数 エネルギー分解能 エネルギー分解能 [e[eV]V]

補正前補正前 120393120393 171.4±0.5171.4±0.5補正後補正後 120708120708 171.4±0.5171.4±0.5補正＋バッドコラム除去補正＋バッドコラム除去 118783118783 170.4±0.5170.4±0.5

スペクトルの比較スペクトルの比較BI1 g02346

カウントカウント数 数 エネルギー分解能 エネルギー分解能 [e[eV]V]

補正前補正前 273272273272 133.1±0.2133.1±0.2補正後補正後 302360302360 131.2±0.2131.2±0.2補正＋バッドコラム除去補正＋バッドコラム除去 288983288983 131.0±0.2131.0±0.2

スペクトルの比較スペクトルの比較BI1 g02346

カウントカウント数 数 エネルギー分解能 エネルギー分解能 [e[eV]V]

補正前補正前 6240362403 165.7±0.6165.7±0.6補正後補正後 7205772057 163.0±0.6163.0±0.6補正＋バッドコラム除去補正＋バッドコラム除去 6889468894 162.6±0.6162.6±0.6

Energy and Pulse-height LinearityBI1, Seg.CFI1, Seg.C

Energy Resolution (FWHM)FI-1, Seg.C BI-1, Seg.C

Quantumn Efficiency MeasurementQuantumn Efficiency Measurement Relative Efficiencies of FM-Relative Efficiencies of FM-

FI0,FI1,FI2,FI3,BI0,BI1 and XIS-EU are FI0,FI1,FI2,FI3,BI0,BI1 and XIS-EU are measured by irradiating X-rays from the measured by irradiating X-rays from the spectrometer to whole the CCD area. spectrometer to whole the CCD area. Generator beam current is always monitored and Generator beam current is always monitored and

stabilized <1%.stabilized <1%. XIS-EU was cross-calibrated to a Gas PC on XIS-EU was cross-calibrated to a Gas PC on

2003Dec & 2004Jul. XIS-FM are not installed in 2003Dec & 2004Jul. XIS-FM are not installed in the chamber with the Gas PC simultaneously.the chamber with the Gas PC simultaneously.

The gas PC was calibrated through the slant The gas PC was calibrated through the slant incident method in 2004 January. incident method in 2004 January.

X-raysX-rays

Slant Incident Method: Application Slant Incident Method: Application to Gas PCto Gas PC

We determined to use the Gas PC as the reference counter

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0.2 0.4 0.6 0.8 1

coun

t rat

e ra

tio

Ex (keV)

30°/0°

45°/0°

Ratio of Counting rate of Gas PC

Best fit estimateBest fit estimate

Poly propylene Poly propylene thicknessthickness

1.011.01±0.06±0.06mm

HH22OO 0.2810.281±0.048±0.048mm

P10gas dead P10gas dead layerlayer

79.6±9.779.6±9.7mm

20042004 年１月実験の年１月実験の再解析再解析 比例計数管の窓のメッシュ比例計数管の窓のメッシュ

5050mm 厚、厚、 0.5mm0.5mm ピッチピッチ開口率開口率 0.763 (X0.763 (X 線で実測）線で実測）断面○ではなく□を仮定断面○ではなく□を仮定

30°/0°30°/0° とと 45°/0°45°/0° を　　　　　　　　　　を　　　　　　　　　　　　　　同時フィット　　　　同時フィット Ｘ線発生装置の長期変　　　　　　　　Ｘ線発生装置の長期変　　　　　　　　　　　　　　　　　動を補正　　　　　　　　　動を補正

XIS-EU and Gas PC cross XIS-EU and Gas PC cross calibration using a entrance slit calibration using a entrance slit

X-rays through Slit ( ~1mm)X-rays through Slit ( ~1mm)

Dispersion Direction

PC (0.525keV) XIS-EU (0.525keV)

PC Spectra and CCD Spectra PC Spectra and CCD Spectra

0.01

0.1

1

0.2 0.4 0.6 0.8 1

XISEU-QE(2004Jul)XISEU-QE(2003Dec)XISEU-QE model(200500315version)

XIS

EU

-QE

Ex(keV)

Best Fit EstimatesBest Fit Estimates

SiO2SiO2 0.4710.471±0.039±0.039mm

SiSi 0.2050.205±0.029±0.029mm

Si3N4Si3N4 0.000±0.030.000±0.03mm

Si depletion 65m fixedm fixed

Constant Constant FactorFactor

0.852±0.0350.852±0.035

-1deg offset slant-PC is assumed

Relative QE XIS-EU Relative QE XIS-EU

FI0 FI1

FI2 FI3

Red=line component

Relative QE of BI0,BI1 to XIS-EURelative QE of BI0,BI1 to XIS-EU

BI0 BI1

～ 80@0.28 keV～ 10@0.6 keV

0.01

0.1

1

1 10

XIS FI1 QE

FI1-QE(Osaka)

FI1-QE(Kyoto)

Ex(keV)

0.01

0.1

1

1 10

XIS FI1 QE

FI1-QE(Osaka)

FI1-QE(Kyoto)x0.8

FI1 QEmodel

Ex(keV)

Best Fit Best Fit EstimatesEstimates

SiO2SiO2 0.4430.443±0.039±0.039mm

SiSi 0.1810.181±0.029±0.029mm

Si3N4Si3N4 0.000±0.0160.000±0.016mm

Si depletion

68.9±1.7±1.7mm

Constant Constant FactorFactor

0.857±0.0030.857±0.003

-1deg offset slant-PC is assumed

0.01

0.1

1

1 10

XIS FI1 QE

FI1-QE(Osaka)

FI1-QE(Kyoto)

FI2-QE(MIT)

Ex(keV)

XAFS near the O-KedgeXAFS near the O-Kedge

FI-2

Eedge = 0.532 ±0.001 keV red.2 = 1.3178 (d.o.f. = 418)

0.1

1

1 10

XIS BI1 QE

BI1-QE(Osaka -1deg)BI1-QE(Kyoto)BI1-QE(Osaka 0deg)BI1-QE(Osaka +1deg)BI1 QEmodel with H2OBI1 QEmoel without H2O

Ex(keV)

Best Fit Best Fit EstimatesEstimates

HfO2HfO2 0.0050.005m fixedm fixed

AgAg 0.0010.001m fixedm fixed

SiO2SiO2 0.000±0.00050.000±0.0005mm

Si depletion

45.7±0.7±0.7mm

Constant Constant FactorFactor

0.934±0.0030.934±0.003

-1deg offset slant-PC is assumed

Upper limit of Surface dead layer in BI-CCDUpper limit of Surface dead layer in BI-CCD

0.45 0.5 0.55 0.6 keV

H2O on BI1 <0.11 μm

Dispersion Spectrum with BIμm

(H2O

)

0.1

1

1 10

XIS BI1 QE

BI1-QE(Osaka -1deg)BI1-QE(Kyoto)BI1-QE(Osaka 0deg)BI1-QE(Osaka +1deg)BI1 QEmodel with H2OBI1 QEmoel without H2O

Ex(keV)

0.1

1

1 10

XIS BI1 QE

BI1-QE(Osaka -1deg)BI1-QE(Kyoto)BI1-QE(Osaka 0deg)BI1-QE(Osaka +1deg)BI1-QE(MIT)BI1 QEmodel with H2OBI1 QEmoel without H2O

Ex(keV)

0.1

1

0.2 0.4 0.6 0.8 1

pcqe 7:40:42 2005/02/25

PC QE (2005/02/14 version)

QE

mod

el

Ex (keV)

PC ＱＥ model

Detailed (FI) Gate StructureDetailed (FI) Gate Structure

Area_ratio_gate=0.125(=3Area_ratio_gate=0.125(=3m)m) Additional_gate_thickness / slab_thicknessAdditional_gate_thickness / slab_thickness

SiO2:0.7SiO2:0.7 Si:1.0Si:1.0

Si3N4 0.026Si3N4 0.026m ?m ?

Channel Stop ParametersChannel Stop Parameters

Area_channelstop=0.0833 (=2Area_channelstop=0.0833 (=2m/24m/24m)m) Channelstop_thicknessChannelstop_thickness

SiO2:0.35SiO2:0.35mm Si:0.45Si:0.45mm

Absolute QE issuesAbsolute QE issues Reconsider the assumptionsReconsider the assumptions

96% at 4.5keV for XIS-FI Check grade7 events ?

Gas PC window model Mesh measurement ?

ACIS BESSY calibration How was the effective area or normalization calibrated ?

How about Channel Stop events ? Hidden dead space in FI ? Adopt the BI1 QE as a reference

BI QE should not be 1 (at least a few % grade 7 events) How do we model F_data-reduction ?

Application of the Slant Incidence method to BI0 after the Astro-E2 launch. Any other good way for the absolute QE cal ?

Energy independent factor of 10% is not a problem. Edge structure of 10% might be a problem.

SummarySummary We have completed the calibration experiments We have completed the calibration experiments

on the ground for XIS flight models.on the ground for XIS flight models. Data reduction procedures were updated for Data reduction procedures were updated for

Astro-E2 XIS.Astro-E2 XIS. Conversion to FTOOLS will be required.Conversion to FTOOLS will be required.

Profile has less tail component than Astro-E1 Profile has less tail component than Astro-E1 XIS.XIS.

Relative QE between the XIS sensors were Relative QE between the XIS sensors were accurately measured <5%?.accurately measured <5%?.

We need further work on absolute QE.We need further work on absolute QE.