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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected]. Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Page 1: ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±'n ¨F3~¾ · Title ñEA:Áq4 ¸6 AIÕ#|Å÷=;: $é¾É#ì N§\ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±"n ¨F3~¾ Author ñEA:Áq4 ¸6 AIÕ#?= Ô©\ |ØÑOý

To learn more about ON Semiconductor, please visit our website at www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected].

Is Now Part of

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Page 2: ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±'n ¨F3~¾ · Title ñEA:Áq4 ¸6 AIÕ#|Å÷=;: $é¾É#ì N§\ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±"n ¨F3~¾ Author ñEA:Áq4 ¸6 AIÕ#?= Ô©\ |ØÑOý

June 2014

FDM

C8200 D

ual N-C

hannel PowerTrench

® MO

SFET

©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comFDMC8200 Rev.A2

FDMC8200 Dual N-Channel PowerTrench® MOSFET 30 V, 9.5 mΩ and 20 mΩ

FeaturesQ1: N-Channel

Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A

Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A

Q2: N-ChannelMax rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9 A

Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7 A

RoHS Compliant

General DescriptionThis device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.

ApplicationsMobile Computing

Mobile Internet Devices

General Purpose Point of Load

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Q1 Q2 UnitsVDS Drain to Source Voltage 30 30 VVGS Gate to Source Voltage (Note 3) ±20 ±20 V

ID

Drain Current - Continuous (Package limited) TC = 25 °C 18 18

A - Continuous (Silicon limited) TC = 25 °C 23 45 - Continuous TA = 25 °C 8 1a 12 1b

- Pulsed 40 40

PDPower Dissipation TA = 25 °C 1.9 1a 2.2 1b

WPower Dissipation TA = 25 °C 0.7 1c 0.9 1d

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

RθJA Thermal Resistance, Junction to Ambient 65 1a 55 1b

°C/WRθJA Thermal Resistance, Junction to Ambient 180 1c 145 1d

RθJC Thermal Resistance, Junction to Case 7.5 4

Device Marking Device Package Reel Size Tape Width QuantityFDMC8200 FDMC8200 Power 33 13 ” 12 mm 3000 units

G2 G1

BOTTOM

G2

D1

S2S2

S2

D1

G1D1

D1

D2/S1

S2

S2

S2 D1

D1

D1Pin 1VIN

SWITCH NODE

GLS

VIN

GND GND GND

GHSVIN

VIN

VIN

SWITCH NODE

GLS

VIN

GND GND GND

GHSVIN

VIN

4

3

2

1

5

6

7

8 Q1

Q2 4

3

2

1

5

6

7

8 Q1

Q2

Power 33

BOTTOM

Page 3: ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±'n ¨F3~¾ · Title ñEA:Áq4 ¸6 AIÕ#|Å÷=;: $é¾É#ì N§\ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±"n ¨F3~¾ Author ñEA:Áq4 ¸6 AIÕ#?= Ô©\ |ØÑOý

FDM

C8200 D

ual N-C

hannel PowerTrench

® MO

SFET

©2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.comFDMC8200 Rev.A2

Electrical Characteristics TJ = 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Symbol Parameter Test Conditions Type Min Typ Max Units

BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 VID = 250 μA, VGS = 0 V

Q1Q2

3030 V

ΔBVDSS ΔTJ

Breakdown Voltage TemperatureCoefficient

ID = 250 μA, referenced to 25 °CID = 250 μA, referenced to 25 °C

Q1Q2 14

14 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 VVDS = 24 V, VGS = 0 V

Q1Q2

11 μA

IGSS Gate to Source Leakage Current VDS = 20 V, VGS = 0 V Q1Q2 100

100nAnA

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μAVGS = VDS, ID = 250 μA

Q1Q2

1.01.0

2.32.3

3.03.0 V

ΔVGS(th) ΔTJ

Gate to Source Threshold VoltageTemperature Coefficient

ID = 250 μA, referenced to 25 °CID = 250 μA, referenced to 25 °C

Q1Q2

-5-6 mV/°C

rDS(on) Static Drain to Source On Resistance

VGS = 10 V, ID = 6 A VGS = 4.5 V, ID = 5 A VGS = 10 V, ID = 6 A, TJ = 125 °C

Q1162422

203228

mΩVGS = 10 V, ID = 9 A VGS = 4.5 V, ID = 7 A VGS = 10 V, ID = 9 A, TJ = 125 °C

Q27.39.510

9.513.513

gFS Forward Transconductance VDD = 5 V, ID = 6 AVDD = 5 V, ID = 9 A

Q1Q2

2956 S

Ciss Input Capacitance

VDS = 15 V, VGS = 0 V, f = 1 MHZ

Q1Q2 495

1180660

1570 pF

Coss Output Capacitance Q1Q2

145330

195440 pF

Crss Reverse Transfer Capacitance Q1Q2

2030

3045 pF

Rg Gate Resistance Q1Q2

1.41.4 Ω

td(on) Turn-On Delay Time Q1VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω

Q2VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω

Q1Q2 11

132023 ns

tr Rise Time Q1Q2 3.1

41010 ns

td(off) Turn-Off Delay Time Q1Q2 35

385660 ns

tf Fall Time Q1Q2 1.3

61012 ns

Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Q1:VDD = 15 V, ID = 6 A,

Q2:VDD = 15 V, ID = 9 A,

Q1Q2

7.316

1022 nC

Qg(TOT) Total Gate Charge VGS = 0 V to 4.5 V Q1Q2

3.17

4.310 nC

Qgs Gate to Source Charge Q1Q2 1.8

4.1 nC

Qgd Gate to Drain “Miller” Charge Q1Q2 1

1.5 nC

Page 4: ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±'n ¨F3~¾ · Title ñEA:Áq4 ¸6 AIÕ#|Å÷=;: $é¾É#ì N§\ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±"n ¨F3~¾ Author ñEA:Áq4 ¸6 AIÕ#?= Ô©\ |ØÑOý

FDM

C8200 D

ual N-C

hannel PowerTrench

® MO

SFET

©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.comFDMC8200 Rev.A2

Electrical Characteristics TJ = 25 °C unless otherwise noted

Drain-Source Diode Characteristics

Notes:

1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

Symbol Parameter Test Conditions Type Min Typ Max Units

VSDSource to Drain Diode Forward Volt-age

VGS = 0 V, IS = 6 A (Note 2)VGS = 0 V, IS = 9 A (Note 2)

Q1Q2 0.8

0.8 1.21.2 V

trr Reverse Recovery Time Q1IF = 6 A, di/dt = 100 A/sQ2IF = 9 A, di/dt = 100 A/s

Q1Q2

1321

2434 ns

Qrr Reverse Recovery Charge Q1Q2 2.3

5.61012 nC

a.65 °C/W when mounted on a 1 in2 pad of 2 oz copper

c. 180 °C/W when mounted on a minimum pad of 2 oz copper

b.55 °C/W when mounted on a 1 in2 pad of 2 oz copper

d. 145 °C/W when mounted on a minimum pad of 2 oz copper

Page 5: ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±'n ¨F3~¾ · Title ñEA:Áq4 ¸6 AIÕ#|Å÷=;: $é¾É#ì N§\ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±"n ¨F3~¾ Author ñEA:Áq4 ¸6 AIÕ#?= Ô©\ |ØÑOý

FDM

C8200 D

ual N-C

hannel PowerTrench

® MO

SFET

©2009 Fairchild Semiconductor Corporation 4 www.fairchildsemi.comFDMC8200 Rev.A2

Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted

Figure 1.

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40VGS = 10 V

VGS = 4 V

PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX

VGS = 3.5 V

VGS = 4.5 V

VGS = 6 V

I D, D

RA

IN C

UR

REN

T (A

)

VDS, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

0 10 20 30 400

1

2

3

4

VGS = 3.5 V

PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX

NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

ID, DRAIN CURRENT (A)

VGS = 4 V

VGS = 4.5 V

VGS = 6 V VGS = 10 V

Normalized On-Resistance vs Drain Current and Gate Voltage

Figure 3. Normalized On Resistance

-75 -50 -25 0 25 50 75 100 125 1500.8

1.0

1.2

1.4

1.6

ID = 6 AVGS = 10 V

NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

TJ, JUNCTION TEMPERATURE (oC)

vs Junction TemperatureFigure 4.

2 4 6 8 100

20

40

60

80

100

TJ = 125 oC

ID = 6 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

r DS(

on),

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E (m

Ω) PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

On-Resistance vs Gate to Source Voltage

Figure 5. Transfer Characteristics

2.0 2.5 3.0 3.5 4.0 4.50

10

20

30

40

TJ = 150 oC

VDS = 5 V

PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I D, D

RA

IN C

UR

REN

T (A

)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.2 0.4 0.6 0.8 1.0 1.20.001

0.01

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

I S, R

EVER

SE D

RA

IN C

UR

REN

T (A

)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode Forward Voltage vs Source Current

Page 6: ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±'n ¨F3~¾ · Title ñEA:Áq4 ¸6 AIÕ#|Å÷=;: $é¾É#ì N§\ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±"n ¨F3~¾ Author ñEA:Áq4 ¸6 AIÕ#?= Ô©\ |ØÑOý

FDM

C8200 D

ual N-C

hannel PowerTrench

® MO

SFET

©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.comFDMC8200 Rev.A2

Figure 7.

0 2 4 6 80

2

4

6

8

10ID = 6 A

VDD = 10 V

VDD = 15 V

V GS,

GA

TE T

O S

OU

RC

E VO

LTA

GE

(V)

Qg, GATE CHARGE (nC)

VDD = 20 V

Gate Charge Characteristics Figure 8.

0.1 1 10 3010

100

1000

f = 1 MHzVGS = 0 V

CA

PAC

ITA

NC

E (p

F)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain to Source Voltage

Figure 9.

0.01 0.1 1 10 1002000.001

0.01

0.1

1

10

100

10 s1 s

DC

100 ms10 ms1 ms

100 us

I D, D

RAI

N CU

RRE

NT (A

)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY rDS(on)

SINGLE PULSETJ = MAX RATEDRθJA = 180 oC/WTA = 25 oC

Forward Bias Safe Operating Area

Figure 10.

25 50 75 100 125 1500

5

10

15

20

25

Limited by Package

RθJC = 7.5 oC/W

VGS = 4.5 V

VGS = 10 V

I D, D

RA

IN C

UR

REN

T (A

)

Tc, CASE TEMPERATURE (oC)

Maximum Continuous Drain Current vs Case Temperature

10-4 10-3 10-2 10-1 1 10 100 1000

1

10

100

P (PK

), PEA

K T

RA

NSI

ENT

POW

ER (W

) VGS = 10 V

SINGLE PULSERθJA = 180 oC/W

TA = 25 oC

t, PULSE WIDTH (s)

300

0.5

Figure 11. Single Pulse Maximum Power Dissipation

Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted

Page 7: ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±'n ¨F3~¾ · Title ñEA:Áq4 ¸6 AIÕ#|Å÷=;: $é¾É#ì N§\ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±"n ¨F3~¾ Author ñEA:Áq4 ¸6 AIÕ#?= Ô©\ |ØÑOý

FDM

C8200 D

ual N-C

hannel PowerTrench

® MO

SFET

©2009 Fairchild Semiconductor Corporation 6 www.fairchildsemi.comFDMC8200 Rev.A2

Figure 12.

10-4 10-3 10-2 10-1 1 10 100 10000.003

0.01

0.1

1

SINGLE PULSERθJA = 180 oC/W

DUTY CYCLE-DESCENDING ORDER

NO

RM

ALI

ZED

TH

ERM

AL

IMPE

DA

NC

E, Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5 0.2 0.1 0.05 0.02 0.01

2

PDM

t1t2

NOTES:DUTY FACTOR: D = t1/t2PEAK TJ = PDM x ZθJA x RθJA + TA

Junction-to-Ambient Transient Thermal Response Curve

Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted

Page 8: ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±'n ¨F3~¾ · Title ñEA:Áq4 ¸6 AIÕ#|Å÷=;: $é¾É#ì N§\ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±"n ¨F3~¾ Author ñEA:Áq4 ¸6 AIÕ#?= Ô©\ |ØÑOý

FDM

C8200 D

ual N-C

hannel PowerTrench

® MO

SFET

©2009 Fairchild Semiconductor Corporation 7 www.fairchildsemi.comFDMC8200 Rev.A2

Typical Characteristics (Q2 N-Channel)

Figure 13. On-Region Characteristics

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

VGS = 3 V

VGS = 4 V

PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX

VGS = 3.5 V

VGS = 4.5 V

VGS = 10 V

I D, D

RA

IN C

UR

REN

T (A

)

VDS, DRAIN TO SOURCE VOLTAGE (V)0 10 20 30 40

0

1

2

3

4

5

6

VGS = 3 V

PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX

NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

ID, DRAIN CURRENT (A)

VGS = 3.5 V

VGS = 4 V VGS = 4.5 V

VGS = 10 V

Figure 14. Normalized on-Resistance vs Drain Current and Gate Voltage

Figure 15. Normalized On-Resistance vs Junction Temperature

-75 -50 -25 0 25 50 75 100 125 1500.6

0.8

1.0

1.2

1.4

1.6

ID = 9 AVGS = 10 V

NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

TJ, JUNCTION TEMPERATURE (oC)2 4 6 8 10

0

10

20

30

40

50

60

TJ = 125 oC

ID = 9 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

r DS(

on),

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E (m

Ω) PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

Figure 16. On-Resistance vs Gate to Source Voltage

Figure 17. Transfer Characteristics

1.5 2.0 2.5 3.0 3.5 4.00

10

20

30

40

TJ = 150 oC

VDS = 5 V

PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I D, D

RA

IN C

UR

REN

T (A

)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 18. Source to Drain Diode Forward Voltage vs Source Current

0.0 0.2 0.4 0.6 0.8 1.0 1.20.001

0.01

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

I S, R

EVER

SE D

RA

IN C

UR

REN

T (A

)

VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = 25 °C unless otherwise noted

Page 9: ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±'n ¨F3~¾ · Title ñEA:Áq4 ¸6 AIÕ#|Å÷=;: $é¾É#ì N§\ÿ1§Ì ±R»P ¿õ¡; ¿Ô; ±"n ¨F3~¾ Author ñEA:Áq4 ¸6 AIÕ#?= Ô©\ |ØÑOý

FDM

C8200 D

ual N-C

hannel PowerTrench

® MO

SFET

©2009 Fairchild Semiconductor Corporation 8 www.fairchildsemi.comFDMC8200 Rev.A2

Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted

Figure 19. Gate Charge Characteristics Figure 20. Capacitance vs Drain to Source Voltage

Figure 21. Forward Bias Safe Operating Area

Figure 22. Maximum Continuous Drain Current vs Case Temperature

Figure 22. Single Pulse Maximum Power Dissipation

0 3 6 9 12 15 180

2

4

6

8

10ID = 9 A

VDD = 10 V

VDD = 15 V

V GS,

GA

TE T

O S

OU

RC

E VO

LTA

GE

(V)

Qg, GATE CHARGE (nC)

VDD = 20 V

0.1 1 10 3010

100

1000

2000

f = 1 MHzVGS = 0 V

CA

PAC

ITA

NC

E (p

F)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

0.01 0.1 1 10 1002000.01

0.1

1

10

100

10 s1 s

DC

10 ms

1 ms

100 us

100 ms

I D, D

RAI

N CU

RRE

NT (A

)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY rDS(on)

SINGLE PULSETJ = MAX RATEDRθJA = 145 oC/WTA = 25 oC

25 50 75 100 125 1500

10

20

30

40

50

Limited by Package

RθJC = 4 oC/W

VGS = 4.5 V

VGS = 10 VI D

, DR

AIN

CU

RR

ENT

(A)

Tc, CASE TEMPERATURE (oC)

10-4 10-3 10-2 10-1 1 10 100 1000

1

10

100

1000

P (PK

), PEA

K T

RA

NSI

ENT

POW

ER (W

) VGS = 10 V

SINGLE PULSERθJA = 145 oC/W

TA = 25 oC

t, PULSE WIDTH (s)

0.5

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FDM

C8200 D

ual N-C

hannel PowerTrench

® MO

SFET

©2009 Fairchild Semiconductor Corporation 9 www.fairchildsemi.comFDMC8200 Rev.A2

Figure 23. Junction-to-Ambient Transient Thermal Response Curve

Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted

10-4 10-3 10-2 10-1 1 10 100 10000.001

0.01

0.1

1

SINGLE PULSERθJA = 145 oC/W

DUTY CYCLE-DESCENDING ORDER

NO

RM

ALI

ZED

TH

ERM

AL

IMPE

DA

NC

E, Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5 0.2 0.1 0.05 0.02 0.01

2

PDM

t1t2

NOTES:DUTY FACTOR: D = t1/t2PEAK TJ = PDM x ZθJA x RθJA + TA

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©2009 Fairchild Semiconductor Corporation 10 www.fairchildsemi.comFDMC8200 Rev.A2

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