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SIEMENS

u.s. Edition Data Book 1984

Table of Contents

Power Semiconductors Selector Guide

Rectifiers, Standard

Rectifiers, Fast Recovery

Rectifiers, Schottky

TO·220 Triacs

SCR's, Phase Control

SCR's, Inverter

SCR PowerMods, Phase Control

Assemblies

BUZ Cross Reference

Rep. Listing I

Table of Contents

Power Semiconductors Selector Guide Rectifiers, Standard ...................................................... 10 Rectifiers, Fast Recovery .................................................. 12 Rectifiers, Schottky ...................................................... 14 T0220 Triacs ............................................................ 16 SCRs, Phase Control ..................................................... 17 SCRs, Inverter ........................................................... 20 SCR PowerMod .......................................................... 23

Rectifiers, Standard Series 204 .............................................................. 26 Series 20 ............................................................... 30 Series 21 ............................................................... 34 Series SSiE11,12 ......................................................... 38 Series SSiE43,44 ......................................................... 44 Series SSi43A,44A ....................................................... 49 Series 304 .............................................................. 54 Series 34 ............................................................... 59 Series 36 ............................................................... 63 Series 306 .............................................................. 67 Series 37 ............................................................... 71 Series 307 .............................................................. 75 Series 42 ............................................................... 79 Series 43 ............................................................... 83 Series 53 ............................................................... 87 Series 504 .............................................................. 91

Rectifiers, Fast Recovery Series 006 .............................................................. 96 Series 012 ............................................................. 101 Series 016 ............................................................. 106 1N3899-1N3903 ......................................................... 111 1N3909-1N3913 ......................................................... 116 Series 045 ............................................................. 121 Series 055 ............................................................. 126

Rectifiers, Schottky Series SO 41 ........................................................... 132 Series SBR 30; BYS 31 ................................................... 135 Series SO 241 .......................................................... 138 Series SBT 30, BYS 79 .................................................... 141 Series SO 51 ........................................................... 144 FST 60 ................................................................ 147 Series SBR 80, BYS 71 ................................................... 150 FST 160 ............................................................... 153 FST 200, BYS 97 ........................................................ 156 FST 300, BYS 93 ........................................................ 159

5

Table of Contents

TO·220 Triaes TX C10 ................................................................ 164 Series 2N6343; 2N6344; 2N6345 ............................................ 168 TX D10 ..................... ' ........................................... 170 Series 2N6343A; 2N6344A; 2N6345A ........................................ 175

SCRs, Phase Control Series SSt C 12 ......................................................... 178 Series SSt C 10 ......................................................... 182 Series SSt D 16 ......................................................... 187 Series SSt D 10 ......................................................... 189 Series 2N6397; 2N6398; 2N6399 ............................................ 194 Series 2N6402; 2N6404; 2N6405 ............................................ 196 Series 40C ............................................................. 198 Series 050 ............................................................. 202 Series 052 ............................................................. 206 Series 55C ............................................................. 210 Series 071 .............................................................. 214 Series 70C ............................................................. 218 Series 080 ............................................................. 222 Series 151 ............................................................. 226 Series 150C ............................................................ 230 Series 240 ............................................................. 234 Series 300 ............................................................. 237 Series 350 ............................................................. 240

SCRs, Inverter Series 039 ............................................................. 244 Series 079 ............................................................. 249 Series SSt H 61 ......................................................... 254 Series SSt L 61 ......................................................... 258 Series SSt N 61 ......................................................... 266 Series SSt P 61 ......................................................... 279

SCR PowerMods, Phase Control Series MlT 18L ......................................................... 284 Series MlT 25L ......................................................... 289 Series MlT40A.L; MTD40A,L; MDT40A,L ..................................... 294 Series MlT50A,L; MTD50A,L; MDT50A,L ..................................... 299 Series MlT65A; MTD65A; MDT65A ......................................... 304 Series MlT95A; MTD95A; M DT95A ......................................... 309 Series F160T ........................................................... 314

6

Table of Contents

Assemblies Custom Assemblies· Introduction ................ : ........................ 320 Rectipoint Silicon Power Rectifers ......................................... 321 Silicon Power Rectifier Assemblies· Plate Heatsinks .......................... 323 Silicon Power Rectifier Assemblies· Series 20 & 21 ............................ 324 Silicon Power Rectifier Assemblies - Series 34 ................................ 326 Silicon Power Rectifier Assemblies - Series 42 & 43 ............................ 328 Silicon Power Rectifier Assemblies - Series 53/504 . ............................ 329 Silicon Rectifier Assemblies "W" Heatsinks .................................. 330 High Voltage Silicon Rectifier Assemblies· Series JHV21 ....................... 332 High Voltage Silicon Rectifier Assemblies - Series JHV34 ....................... 334 High Voltage Silicon Rectifier Assemblies - Series LHV34 ....................... 336 High Voltage Silicon Rectifier Assemblies - Series JHV36 ....................... 338 High Voltage Silicon Rectifier Assemblies· Series LHV36 ....................... 340 High Voltage Silicon Rectifier Assemblies - Series JHV37 ....................... 342 High Voltage Silicon Rectifier Assemblies - Series LHV37 ....................... 344 High Voltage Silicon Rectifier Assemblies· Series LHV43 ....................... 346 High Voltage Silicon Rectifier Assemblies· Series SHV43 ....................... 347 Encapsulated Assemblies - Series EH ....................................... 348 Encapsulated Assemblies· Series ER ....................................... 349 Encapsulated Assemblies· Series EF Doubler. ............................... 350 Encapsulated Assemblies· Series EF Half Wave .............................. 351

BUZ Cross Reference ...................................................... 354

Rep Listing ............................................................... 358

7

Power Semiconductors Selector Guide


IF (avg.) Average DC Forward Current (AMPS)

12 12 16 22

PACKAGE 00203AA 00203AA 00203AA 00203AA OUTLINE (004) (004) (004) (004)

VRRM (Volts)

100 1N1200,A S2041 0

200 1N1202,A S20420

300

400 1N1204,A S20440 S2040 S2140

500

600 1N1206,A S20460 S2060 S2160

700

800 S2080 S2180

900

1000 S20100 S21100

1100

1200 S20120 S21120

1300

1400

1500

IrSM(Amps) 240 200 200 250

Tc at 10 (OC) 150 150 126 131

MaxTJ (OC) 190 190 190 190

Refer 26 26 30 34

to page:

Notes: 1. For Reverse Polarity change SSiE11 to SSiE12

For Reverse Polarity change SSiE43 to SSiE44 2. For Reverse Polarity change SSiE43A to SSiE44A

10

35 35 40

(Note 1) (Note 2) 00203AB PRESSFIl PRESS FIT (005)

Avalanche

Diode

SSiE1105

SSiE1110 1N1184,A

SSiE1120 1N1186,A

SSiE1130

SSiE1140 1N1186,A

1N1190,A

SSiE4360 SSiE4360A

SSiE4383 SSiE4383A

375 600

120 155

175 200

38 49 54

40 45

00203AB 00203AB (005) (005)

S3041 0 S3410

S30420 S3420

S30440 S3440

S30460 S3460

S3480

S341 00

S34120

800 700

155 122

200 190

54 59


D0203AA (004)

D0203AB (DOS)

~l

D0205AA (008)

5.10

~l

j~ D0205AB

(009) Pross Fit"


70 70 85 85 125 150 250 300

D0203AB D0203AB D0203AB D0203AB D0205AA D0205AA D0205AB D0205AB PACKAGE (D05) (D05) (D05) (005) (008) (008) (009) (009) OUTLINE

VRRM (Volts)

S361 0 S306010F S371 0 S307010F S4210 S4310 S5041 0 100

S3620 S306020F S3720 S307020F S4220 S4320 S50420 200 S4230 S4330 S50430 300

S3640 S306040F S3740 S307040F S4240 S4340 S50440 400

S4250 S4350 500 S3660 S306060F S3760 S307060F S4260 S4360 S50460 600

700

S3680 S306080F S3780 S4280 S4380 S5380 800 900

S361 00 S306100F S371 00 S421 00 S43100 S531 00 1000

1100

S36120 S306120F S37120 S42120 S43120 S53120 1200

1300

1400

1500

1200 1200 1500 1500 1800 3000 4500 5000 ITSM(Amps)

Tc at 10 138 125 132 105 130 125 122 136 (OC)

MaxTJ 190 190 190 190 190 190 190 190 (OC)

63 67 71 75 79 83 87 91

11



6 6 12 12 15

PACKAGE 00203AA 00203AA oo203AA 00203AA 00203AA OUTLINE (004) (004) (004) (004) (004)

VRRM (Volts)

50 1N3879 SOO6AADF 1N3889 S012AADF S016AADF 100 1N3880 SOO601DF 1N3890 S01201DF S01601DF 150 200 1N3881 S00602DF 1N3891 S01202DF S01602DF 300 1N3882 S00603DF 1N3892 S01203DF S01603DF 400 1N3883 S00604DF 1N3893 S01204DF

ITSM(Amps) 75 75 250 150 250

Tc at 10 (OC) 100 100 100 100 100

Max TJ (OC) 150 150 150 150 150

trr (ns) 200 200 200 200 100

Max VF (Volts) 1.4 1.4 1.4 1.4 1.15 at IFM = (Amps) 6 6 12 12 30

Refer 96 96 101 101 106 to page:

12


D0203AA D04

D0203AB D05

IF(avg.) Average DC Forward Current (AMPS)

25 35 45 55

00203AB 00203AB 00203AB D0203AB (DOS) (DOS) (DOS) (005)

1N3899 1N3909 S045AADF S055AADF 1N3900 1N3910 S04501DF S05501DF

1N3901 1N3911 S04502DF S05502DF 1N3902 1N3912 S04503DF S05503DF 1N3903 1N3913 S04504DF

225 300 600 800

100 100 100 100

150 150 150 150

200 200 200 100

1.4 1.4 1.15 1.15 20 30 90 90

111 116 121 126

PACKAGE OUTLINE

VRRM (Volts)

50 100 150 200

300 400

ITSM(AmpS)

Teat 10 (OC)

MaxTJ(OC)

trr(ns)

Max VF (Volts) at IFM = (Amps)

13


PACKAGE OUTLINE

VRRM

(Volts) 30 35 40 45

50

I-rsM(Amps)

Tc at Rated 10 (OC)

TJ Max (OC)

Max VF (Volts) at IFM = (Amps)

Refer to page:

• Center Tap Current

14

D0203AA D04

D0203AB 005

IF(avg.) Average DC Forward Current (AMPS) 30 30 30" 30"

DO·203M 00·203M TO·204M TO·204M (004) (004) (f03) (f03)

504135 5BR3035 5024135 5BT3035

5BR3040 5BT3040

504145 5BR3045 5024145 5BT3045

5BR3050 5BT3050

600 600 400 600

90 120 93 110

160 175 160 175

.55 at .63 at .6 at .66 at

30 30 20 30 TJ = 125°C TJ=25° TJ = 125°C TJ = 25°

132 135 138 141


60A 160A

Isolated Mounting Dual Diode

IF (avg.) Average DC Forward Current (AMPS) 60 60" 80 160" 200"

DO·203AB DO·203AB (T0244) (005) MODULE (005) MODULE MODULE

S05135 FSTS035 SBRB035 FST1S035 FST20035 FSTS040 SBR8040 FST1S040 FST20040

S05145 FSTS045 SBRB045 FST1S045 FST20045 FSTS050 SBRB050 FST1S050 FST20050

800 1000 1000 1000 2000

94 150 120 103 131

1S0 175 175 175 175

.S at .7 at .74 at .74 at .8at SO SO 80 80 200

TJ = 125°C TJ = 25°C TJ =25°c TJ=25°c TJ=25°

144 147 150 153 156

200A 300A

Dual Diode

T0244

300"

(T0244) PACKAGE MODULE OUTLINE

VRRM (Volts)

30 FST30035 35

FST30040 40 FST30045 45 FST30050 50

2000 ITSM(Amps)

113 Teat 10 (OC)

175 TJ Max (OC)

.78 at Max VF (Volts)

300 at IFM = (Amps) TJ = 125°C

159

15

T0220 TRIACS

T0220AB

VORM ITRMS lar @ 25°C Refer MT2+G+ MT2+G+ MT2-G- MT2-G+ to

(volts) (Amps) (mA) (mA) (mA) (mA) page:

TXC10*40 400V 4 *H: 25 25 25 50 TXC10*50 500V K: 50 50 50 TXC10*60 600V L: 75 75 75 164 TXC10*70 700V TXC10*80 800V

TXC10*40M 400V 6 *H: 25 25 25 50 TXC10*50M 500V K: 50 50 50 TXC10*60M 600V L: 75 75 75 164

TXC10*70M 700Y TXC10*80M 800V

2N6343 400V 8 70 75 50 75 2N6344 600V 50 75 50 75 168 2N6345 800Y

TXD10*40 400Y 8 *H: 25 25 25 50 TXD10*50 500Y K: 50 50 50 TXD10*60 600Y L: 75 75 75 170 TXD10*70 700Y TXD10*80 800Y

TXD10*40M 400Y 10 *H: 25 25 25 50 TXD10*50M 500Y K: 50 50 50 TXD10*60M 600Y L: 75 75 75 170 TXD10*70M 700V TXD10*80M 800V

TXD10*40P 400V 12 *H: 25 25 25 50 TXD10*50P 500V K: 50 50 50 TXD10*60P 600V L: 75 75 75 170 TXD10*70P 700Y TXD10*80P 800Y

2N6343A 400V 12 50 75 50 75 2N6344A 600V 175 2N6345A 800V

TXE10*40 400V 20 *L: 50 50 50 75 Consult TXE10*60 600V M: 50 50 50 factory for TXE10*80 800V data sheet

* Note: Not all IGT combinations are available for all voltages.

16

SCRs, Phase Control

01 1.1

T0220AB

On·State (RMS) Current (AMPS)

4 9.4 12 16 25

PACKAGE OUTLINE T0220 T0220 T0220 T0220 T0220

VORMiVRRM (Volts)

25

50 100

200

300 BSTE1020

400 BSTC1226 BSTC1026M BSTD1026 BSTD1026M BSTE1026 2N6397 2N6403

500 BSTC1233 BSTC1033M BSTD1033 BSTD1033M 2N6398 2N6404

600 BSTC1240 BSTC1040M BSTD1040 BSTD1040M BSTE1040

700 BSTC1246 BSTC1046M BSTD1046 BSTD1046M

800 BSTC1253 BSTC1053M BSTD1053 BSTD1053M BSTE1053 2N6399 2N6405

1000 BSTD1666N

1100

1200 BSTD1680N

1300

1400

ITSM(Amps) 50 95 130 160 240

Max IGrlmA)

at TJ =25°C 50 50 50 50 40

Max VGT (Volts)

at TJ =25°C 2.0 2.0 2.0 2.0 2

Max VTM (Volts)

at TJ =25°C 3.4 at 2.94 at 1.98 at 1.7 at 1.5 at

at 1T= 7.5A 24A 24A 32A 48A

Refer 178 182 189 189

to page: .. •• Consult factory for data sheet

17

SCRs, Phase Control

T020BAC (Toes)

T0208AD (T083)

'It·20 UNF·2A

T0209AC (T094)


63 80 86 86 110

T0208AC T0208AC T0209AC T0209AC T0209AC

40C10B 05001GOF 40C20B 05002GOF 05202GOA 07102GOA

05203GOA 07103GOA

40C40B 05OO4GOF 05204GOA 07104GOA

05205GOA 07105GOA

40C60B 05006GOF 05206GOA 07106GOA

40C80B 05oo8GOF 55C80B

40C1OOB 05010GOF 55C1ooB

40C120B 05012GOF 55C120B

1000 1200 1200 1200 1600

100 100 100 100 100

3 3 3 3 3

3.2 at 2.55 at 2.0 at 2.2 at 1.6 at 500 500 220 220 220

198 202 206 210 214

18

T0209AB (Toe3)

110

T0209AC

70CBOB

70C1OOB

70C120B

1600

100

3

1.85 at 220

218

PACKAGE OUTLINE

VDRM/VRRM (Volts)

25 50

100 200 300

400

500

600

700

800

1000 1100 1200 1300 1400

ITSM{Amps)

MaxIGT{mA) atTJ=2SoC

Max VGT (Volts) atTJ=2SoC

Max VTM (Volts) atTJ=2SoC

at 1T=

SCRs, Phase Control (cont'd)

125

PACKAGE T0209AC OUTLINE

VDRM/VRRM (Volts)

100 OB01GOA 200 OB002GOA 300 OB003GOA

400 OB004GOA

SOO OB005GOA

600 OBOO6GOA

800

1000

1200

!rsM(Amps) 1800

Max IGT(mA) at TJ =25°C 100

Max VGT (Volts) at TJ =25°C 3

Max VTM (Volts) at TJ =25°C 1.4 at

at 1T= 220

Refer 222 to page:

T0208AD (T083)

'/J.2O UNF·2A

T0209AC (T094)

On-State (RMS) Current (AMPS)

235 400 470

T0209AB T0200AB T0200AB

15101GOA 15102GOA 15103GOA

15104GOA

15105GOA

15106GOA

150CBOB 24ooBGOF 3OO0BGOF

150C1OOB 24010GOF 30010GOF

150C120B 24012GOF 30012GOF

3500 4500 5500

150 150 150

3 3 3

1.7 at 2.3 at 1.BO at 500 1000 1000

226 234 237

T0200AB

5SO

35OO1GOF 35OO2GOF 35OO3GOF

35004GOF

35005GOF

35006GOF

7500

150

3

1.4B at 1000

240

19

SCRs, Inverter

63

PACKAGE T0208AC OUTLINE (T06S)

VORM/VRRM (Volts)

200 03902GRF

300

400 03904GRF

500

GOO 03906GRF

ITSM(Amps) 1000

tq{J.ts), max 10

MaxIGT(mA)

at TJ =25°C 150

Max VTM (Volts)

at TJ =25°C 3.0 at

at 1T= 500

Refer 244 to page:

20

T0208AC (TOBS)

T0208AD (T083)


63 63 126 126

T0208AC T0208AC T020SAC T020SAC (T06S) (TOGS) (TOGS) (TOGS)

03902GPF 03902GUF 07902GRF 07902GPF

03904GPF 03904GUF 07904GRF 07904GPF

03906GPF 03906GUF 07906GRF 07906GPF

1000 1000 1800 1800

15 20 10 15

150 150 150 150

3.0 at 3.0 at 2.6al 2.6al

500 500 500 500

244 244 249 249

Va·20 UNF·2A

T0209AC (TOM)

126

T020SAC (TOG5)

07902GUF

07904GUF

07906GUF

1800

20

150

2.6al

500

249

SCRs, Inverter


250 250 550 550

PACKAGE TO 200 HOCKEY PUK STYLE OUTLINE

VORM/VRRM (Volts)

200 BSTH6113F BSTH6113G BSTL6113F BSTL6113G


400 BSTH6126F BSTH6126G BSTL6126F BSTL6126G 500 BSTH6133F BSTH6133G BSTL6133F BSTL6133G


IrSM(Amps) 1850 1850 4460 4460

tq!J.<s), max 15 18 15 18

MaxIGr(mA)

at TJ =25°C 250 250 250 250

Max VrM (Volts)

atTJ=25°C 1.85Vat 1.85Vat 1.53Vat 1.53Vat

at 1r= 400A 400A 500A 500A

254 254 258 258

21

SCRs, Inverter


950 950 1730 1730

TO 200 HOCKEY PUK STYLE PACKAGE OUTLINE

VORMIVRRM (Volts)

BSTN6113F BSTN6113G BSTP6113F BSTP6113G 200 BSTN6120F BSTN6120G BSTP6120F BSTP6120G 300 BSTN6126F BSTN6126G BSTP6126F BSTP6126G 400 BSTN6133F BSTN6133G BSTP6133F BSTP6133G 500 BSTN6140F BSTN6140G BSTP6140F BSTP6140G 600

8950 8950 16,000 16,000 ITSM(Amps)

15 18 15 18 tqtJ<s), max

MaxIGT(mA)

250 250 250 250 at TJ=2S oC

Max VTM (Volts)

1.63Vat 1.63Vat 1.70Vat 1.70Vat at TJ=2S oC

1200A 1200A 2400A 2400A at 1T=

266 266 279 279

22

SCR PowerMod (Consult factory for data sheet)

Full-control Version

Half-controlled Version 1

Haif-controlled Version 2

Inverters (Note: 1)

IRMS(Amps)

ITSM(Amps) tq !its)

Volts 600

1000 1200

65

520 25

F041T06V

F041T12V

UL Recognized

65 65 65

520 520 620 35 15 18

F041T06S F042T06P F042T06Q

F041T12S

"Note 1: Available in half control version with Fast Recovery Diode. For half controlled version #1, replace ''T'' with "H" in the catalog number. For half controlled version #2, replace ''T'' with "s" in the catalog number.

Inverters (Note: 1)

IRMS(Amps) 120 120 120 120 250 250 250 250

ITsM(Amps) 1200 1200 1200 1200 4770 4770 4770 4770

tq !its) 25 35 15 18 15 18 25 35

(Volts) 600 F076T06V F076T06S F077T06P F077T06Q F177T06P F177T06P F176T06V F176T06S

1000 1200 F076T12V F076T12S F176T12V F176T12S

"Note 1: Available in hall control version with Fast Recovery Diode. for half controlled version #1, replace ''T'' with "H" in the catalog number. For half controlled version #2, replace ''T'' with "s" in the catalog number.

Rectifiers

I (Amps Avg) 65 95 160

ITSM(Amps) 1000 3600 6700

(Volts) 600 MDD65A06N MDD95A06N MDD160A06N

1200 MDD65A12N MDD95A12N MDD160A12N 1500 MDD65A16N MDD95A16N MDD160A16N

23

SCR PowerMod (Consult factory for data sheet)

Phase Control

l(AmpsAvg) at

TBP = 85°C 18 25 40 50

ITSM<AmpS) 275 440 700 900

(Volts)

600 MTI1BL06N MTI25L06N MTI40(A)06N' MTI50(A)06N' 1200 MTI1BL12N MTI25L12N MTI40(A)12N' MTI50(A)12N' 1600 MTI1BL16N MTI25L16N MTI40(A)16N' MTI50(A)16N'

Refer to 284 Page:

289 294 299

*Available in sOldered (L) version [i.e. MTT40(L)06N] or Compression Bonded (A) [i.e. MTT40(A)06N]

**Consult factory for data sheet

Half·Controlied Version 1 I (Amps Avg)

atTBP=85°c 40 50

ITSM(Amps) 700 900

(Volts) 600 MTD40(A)06N* MTD50(A)06N*

1200 MTD40(A)12N* MTD50(A)12N* 1600 MTD40(A)16N* MTD50(A)16N*

Refer to 294 299 page:

*For soldered version replace "/l!' with "I.:' [i.e. MTD40L06N]

Half·Controlied Version 2

I (Amps Avg) at TBP=85°C 40 50

ITSM (Amps) 700 900

(Volts) 600 MDT40(A)06N* MDT50(A)06N*

1200 MDT40(A)12N* MDT50(A)12N* 1600 MDT40(A)16N* MDT50(A)16N*

Refer to 294 299

page:

* For soldered version replace 'w.' with "I.:' [i.e. MDT40L06N]

24

65 95 125 160

1500 1900 3500 5100

MTI65A06N MTI95A06N F125T060 Fl60T060 MTI65A12N MTI95A12N F125T120 F160T120 MTI65A16N MTI95A16N F125Tl60 F160Tl60

304 309 ** 314

65 95

1500 1900

MTD65A06N MTD95A06N MTD65A12N MTD95A12N MTD65A16N MTD96A16N

304 309

65 95

1500 1900

MDT65A06N MDT95A06N MDT65A12N M[Jl"95A12N M[Jl"65A16N MDT96A16N

304 309


Silicon Power Rectifiers 12 AMP Avg; VRRM to600Volts

• High surge current capability • High case temperature • Glass to metal construction, • Designed for medium voltage

and low cost applications

Dim. Inches Millimeter

Minimum Maximum Minimum Maximum Notes

A B .427 .437 10.84 11.09 C .505 12.82 D .800 20.32 E .432 .442 10.97 11.22 F .095 .105 2.41 2.66 G .386 9.80 H .163 .189 4.15 4.80 2 J .250 6.35 M .280 7.11 N .063 1.27 P .088 .095 2.23 2.41

Note 1: Standard polarity: Stud Is cathode 10-32 UNF·2A Reverse polarity: Stud Is anode Note 2: Full threads within 2V. threads

JEDEC Catalog Number Numbers

Standard Reverse

820410 R2041 0 1N1200,1N1200A S20420 R20420 1N1202,1N1202A

S20440 R20440 lN1204,1N1204A

S20460 R20460 lN1206,1N1206A

26

p

A

Series 204

DO-203AA (DO-4)

Peak Reverse Voltage

100 200

400

600

Silicon Power Rectifier

Electrical Characteristics

Reverse Blocking

Repetitive peak reverse voltage

Maximum peak reverse current

Forward Direction

Maximum average forward current

Maximum surge current series 204,1 N1199·1N1206

Maximum surge current series 1N1199A·1N1206A

Maximum peak forward voltage

Maximum /'t

Maximum I't

Maximum recommended operating frequency

Thermal values

Storage temp range

Operating junction temp range

Maximum thermal resistance junction to case

Mechanical Characteristics

Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

Series 204

VRRM 100V t0600V

/RRM 1.0mA Tc =150oC

/F(AV) 12 Amps Single phase, half·wave rating at

Tc =150oC

/FSM 200 Amps One cycle of 60HZ sinewave

/FSM 240 Amps one cycle of 60 HZ sinewave

VFM 1.2V max. /F=30A; Tc=25°C

/'t 167 A'S less than 8.33 ms 204,1N1199·1N1206

/'t 240A'S less than 8.33 ms series 1N1199·1N1206A

10kHz

- 65°C to + 200°C

-65°Cto + 190°C

RSJC 3.0 oCNJ

Steel stud and base with a #10·32 UNF·2A thread for through

mounting on a heat sink. Nickel plating prevents corrosion.

Glass to metal construction.

Approximately 0.16 ounce (4.5 grams)

May be mounted in any position

30 inch pounds maximum

In accordance with JEDEC DO·203AA (DO·4) outline

27

Silicon Power Rectifiers

Figure 1 Maximum load current versus case temperature

20

18

16

14

~ 12 ~ ~ 10

8

6

4

2

o

*360°

\ \

*180°

I *120°

*601

360°

li~ l:~ l!-J\ ;' '.~~' " '-'

Conduction angle

1\

~ ~ ~ ~ ~ '\ ~ ~ ~

\ 120 130 140 150 160 170 180 190

Diode Case Temperature - °C

28

Series 204

Figure 2 Maximum power dissipation versus forward current

20

18 *360° ;-

16

*1800;

*120:0/ V I /

~ V *60°

/ II; '/ / /;, V ,

V.d W 360°

I:~ l:~ I~ W l!-J' .. . \, /

'-' ',.#'

I)~ Conduction angle

14

12

10

8

6

4

2

o o 2 4 6 8 10 12 14 16 18 20

Average Forward Current - Amperes


Figure 3 Maximum forward characteristics

1000

en ~ ~ 100 E <I::

1 c ~ ::J o '0 ro ~ 10 o

LL en ::J o 0) c ca C ca iii ~ 1

/. ~~C //

17 j

1/ II 25°C

1 ,

o 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Instantaneous Forward Voltage .. Volts

Figure 4 Transient thermal impedance

~ 3.0 ~!!l 0)-

t=~ ~o2.0 ca O

01 B~ Jj~1.0 g~ ~.§ 0

II ,I

L .. ) ......

l,) .....

Figure 5 Maximum surge current at 25°C en ~ 280

~

Series 204

1240

C 200 ~ :; 160 o ~ ~N1199A -1N1206A

~ 120 ;,: (; 80

LL

~ 40 0)

c.. 0

f---~ ....... 1'-

l"--t-- .............. r--.... "'-I--t--t-

.001 .01 0.1 1.0 10.0 100.0 1 10 100

Time in Seconds Time in Cycles

29

Silicon Power Rectifiers 16 AMP Avg; VRRM to 1200 Volts

• High surge current capability • Glass to metal construction, • Excellent thermal fatigue capability



A B .427 .437 10.84 11.09 C .505 12.82 D .800 20.32

p

E .432 .442 10.97 11.22 F .095 .105 2.41 2.66 G .386 9.80 H .163 .189 4.15 4.80 2 J .250 6.35 M .280 7.11 A·../

N .063 1.27 P .088 .095 2.23 2.41

Note 1: Standard polarity: Stud is cathode 10·32 UNF·2A Reverse polarity: Stud is anode Note2: Full threads within 2'12 threads


Standard Reverse

S2040 R2040 1N1126, 1N1346, 1N1346A, 1N1345B

S2060 R2060 1N1128, 1N1348, 1N1348A, 1N1348B 1 N1587, 1 N1616, 1 N2238, 1 N2497

82080 R2080 1N2240 820100 R20100

820120 R20120

30

Series 20

---, 1 G I F t_l 1

E I

_ ----1 0O-203AA

(00-4)

Peak Reverse

400

600

800 1000

1200



Reverse Blocking



Forward Direction


Maximum surge current


Maximum {'t


Thermal values

Storage temp range




Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

Series 20

VRRM 400V to 1200V

(RRM 1.0mA Tc =150°C

'F(AV) 16 Amps Single phase, half-wave rating at

Tc =126°C

'FSM 200 Amps One cycle of 60HZ sinewave

VFM 1.3V max. 'F=30A; Tc =25°C

{'t 165 A'S less than 8.33 ms

10kHz

-65°Cto + 200°C

- 65°C to + 190°C

Steel stud and base with a #10-32 UNF-2A thread for through






In accordance with JEDEC DO-203AA (DO-4) outline

31



24

22

20

18

(/) 16 ~ 1!i 14 E « 12 (J) C)

~ 10 ~ I 8

C ~ 6 ~ o 4

*360° r-=f""""\. *18bo *120° ~

*~oo

~ ~r'-.

"\ t\.\

'" ~ I""

360°

I/~ l/~ W\ ;' " " '-' '-. .' Conduction angle

~ ~ t\

'" ~ '\ ~ ~

Series 20


120

110

100

90

80

70

60 (/)

~ 50

I 40 'C (J)

<ii 30 c-'(;;

'" 20 i:S

I A

*60° I *120JI/ / I III *180° *360°

II -Ii -; III J

I 11/ II I II / / If /

"/; / 360°

/1// ~/~ II / * \./' \_~I

Conduction

~

\ ;.'{/ angle

/ 2 ~ 10

o o Cl.. 0 110 120 130 140 150 160 170 180 190 200 0 10 20 30 40 50 60 70 80 90

Diode Case Temperature-oC Forward Current-Average Amps

32



1000

(/) Q)

~ 100 E <l: I c ~ :; ()

-0

~ 10 o

LL tJ)

:::l o Q) c

'" C '" en .s 1.0

o

/ V--//

// /1

190°C / ! 25°C

II /

I J

1.0 2.0

Series 20

3.0

Instantaneous Forward Voltage-Volts

Figure 4 1mnsient thermal impedance

/v

V /

_V

0.1 1.0

Time in Seconds

Figure 5 Maximum surge current at rated load

~280 E

1240 c200 l!? :; 160 ()

'E 120 '" ~ 80 o

LL 'lij 40 Q)

c... 0 10.0 100.0

~ ~

i"-r-. -...... I--

10

Time in Cycles

--- -

100

33

Silicon Power Rectifiers 22 AMP AVG; VRRM Up To 1200 Volts

• Glass to metal construction • Low forward voltage drop • Excellent reliability • 250 amps surge rating provides high In·rush current capability



A B .427 .437 10.84 11.09 C .505 12.82 0 .800 20.32 E .432 .442 10.97 11.22

p

F .095 .105 2.41 2.66 G .386 9.80 H .163 .189 4.15 4.80 2 J .250 6.35 M .280 7.11 N .063 1.27 A--P .088 .095 2.23 2.41

Note 1: Standard polarity: Stud Is cathode 10-32 UNF·2A Reverse polarity: Stud Is anode Note 2: Full threads within 2V. threads


Standard Reverse

S2140 R2140 1N1204, 1N1204A, 1N2254, 1N2785, 1 N3620, 1 N3965, 1 N4507

S2160 R2160 1N1206, 1N1206A, 1N2258, 1N3622, 1 N3966, 1 N4508

S2180 R2180 1N2260, 1N3623, 1 N3671 , 1N3671A, 1 N3967, 1 N4509

S21100 R21100 1 N2262, 1 N3624, 1 N3673, 1 N3673A, 1N4510

S21120 R21120 1N4511,1N5331

34

Series 21

E

-~ OO·2uaAA

(00·4)


400

600

800

1000

1200



Reverse Blocking



Forward Direction




Maximum I't


Thermal values

Storage temp range




Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

Series 21

VRRM 400V to 1200V

IRRM 1.0mA Tc =150oC

IF(AV) 22 Amps Single phase, half-wave rating at

Tc =131°C

IFSM 250 Amps One cycle of 60HZ slnewave

VFM 1.2V max. IF = 30A; Tc =25°C

I't 250A'S less than 8.33 ms

10kHz

- 65°C to + 200°C

- 65°C to + 190°C

RSJC 2.0oCIW

Steel stud and base with a #10-32 UNF-2A thread for through




May be mounted In any position


In accordance with JEDEC DO-203AA (DO-4) outline

35



36

33

30

27

~ 24 Qi ~ 21

<t: Q) 18 g> Qi 15 ~ I 12

C ~ 9 :; u 6 "0 Cii ~ 3

*360°

\. *180° I\-*120°

~ '\ *660

i'... ~

'"

T T 360°

I/~ l/~ l!J " " \'./ ".~'

Conduction angle

,\ ~ l\

"'" ~ "\ ~ ~ ~

-

-

-

-

Series 21


V)

160

150

140

130

120

110 100

90

80

~ 70 I 60 ~ 50 ~ 40 .~ 30

~ 20 ~ 10 o

/) W

*60· I 1*1800

*120° 1 rr *360°1

II J II I I J I II II I I /

1/ II I V 'I /

I I V

/ III / II h / 360°

r.l' V I/~ l,'~ V l!j .. / ".,' '.'

Conduction angle o

u.. o ~ 0 110120130140150160170180190200 0102030405060708090

, 17

Diode Case Temperature-·C Forward Current-Average Amperes

36



1000

en Q)

~ 100 E ~

I c ~ :; U "0

~ 10 o u.. en :::J o Q) C

'" C

'" U)

c 1.0

190°C

I

I o

,-

7 V

" // II

V / 250C

II I I

1.0 2.0

-

3.0


Figure 4 Transient thermal Impedance

~ 2.0 Q3~ ~~ ~C3 '" ° u 11.0 .E~ § ~ ::;"0 <.l Q) co. ~E 0

,

V

vV

v --

FigureS Maximum surge current at rated load en ~ 280

I 240

~ 200

:; 160 u "E 120

~ G: 80

-a 40 Q)

a. 0

f-

~ ~

i'-"-....

t----.

.001 .01 0.1 1.0 10.0 100.0 1 10


Series 21

-r-

100

37

Silicon Power Rectifiers Press-fit diode for 30 V to 700 V; 35A

• Copper case press fit, knurled and tin-plated

• Designed for high thermal fatigue applications Polarity: Case = cathode, red stamp (SSi E11)

Case = anode, black stamp (SSiE12)

Type Ordering Code

SSiE1102 C66047-A1020-A4 SSiE1105 C66047·A1020·A5 SSiE1110 C66047·A1020·A7 SSiE1120 C66047-A1020·A8 SSiE1130 C66047-A1020-AS SSiE1140 C66047-A1020-A10 SSiE1202 C66047-A1020-A13 SSIE1205 C66047-A1020-A15 SSiE1210 C66047·A1020-A16 SSiE1220 C66047-A1020·A17 SSlE1230 C66047·A1020·A18 SSiE1240 C66047·A1020-A19

38

Series SSiE11, SSiE12

.130

Dimensions in inches

Repetitive peak Surge peak reverse reverse voltage V RRM voltage V RSM

30V 30V 75V 75V

150V 150V 300V 300V 500V 500V 700V 700V 30V 30V 75V 75V

150V 150V 300V 300V 500V 500V 700V 700V



Blocking Repetitive peak reverse voltage

Max. reverse leaking current

Forward Conducting Max. RMS current

Max. average current

Max. peak voltage

Max. peak 1 cycle surge current

Max.f't for fusing

Thermal Values

Max. DC thermal resistance, junction to case

VRRM

fRRM

fF(RMS)

fF(AVG) VFM fFSM

Pt

ReJc

Operating junction temp. range TJ

Storage temperature range Tstg


Max. press-In force 8671b

30 to 150V 300 to 700V

6mA 3mA

55 Amps 55 Amps

35 Amps 35 Amps

1.15 Volts 1.20 Volts

330 Amps 300 Amps

450A'sec 390 A'sec

-40°C to + 175°C

·65°C to + 175°C

Weight Approximately 0.35 ounces (10 grams)

(1) Tc = 25°C unless otherwise Indicated


See ordering code

TJ = 175°C, VR = VRRM

Tc = 120°C

Tc = 120°C, half sine

fFM = 50 Amps

TJ = 175°C, 60HZ

TJ = 175°C, t = 8.3 ms.

39


,

Forward characteristic curves Parameter: junction temperature 8j VRRM = 30Vto 150V

E11/12 a

10 2 ..... ~ .e::::: f--

/1-0 1/ Upper lim it characteristic

10 1 / '/ - - Typical characteristic

0 10 0,4

>11'175'~~

.tV W'

0,6

~ ~ 25'C

II i 0,8 1.0 1.2

Transient thermal resistance for constant current Z(thlJC

O. 7

Z[lhlJC K

I w

P,

I

40

o. 5

0.4

0.3

0.2

o. lL

o 10'

1

;

/ i I -

I I

I , I

, I

I

10' 10 '

Forward power dissipation characteristic curves Parameter: current waveform VRRM = 300Vto700V

24 0 W

20 o Opposing voltage

18 o ~v 16 o 60'

14 ~v

o 120' 12 o tf!v 10 o 180'

DC 8 o ~AV

180' 6 0

~~ 0

50 100

~.

14

10'

1.6 V 1.8 _v,

El1f12.2

5

--I

El1f12.3b

A 150 -[FAV

10 ,

10 ,

10 0


Forward characteristic curves Parameter: junction temperature 8j VRRM = 300Vto700V

~ k::::

;...0:;;

El11121b

-I--r-

/h Upper limit characterisVc

IV /1 - - Typical characteristic

f:::>1"17i'~1 ~ P, 25;C

VI il 'I'

0,4 0.6 0.8 1.0 1.2 1.4 1.6 V 1.8

Forward power dissipation characteristic curves Parameter: current waveform VRRM = 30Vto150V

_v,

240 P, w 1 200 -o~stovoltage

E11/123 . .

Jr

180 160 140

120 100

80 60 40 20 o o

~v 60' ~v 120' tf!v 180' ~AV 180'

DC

50 100 150 --lFAV

Thermal resistance dr

1. K W 1.

2

0

0.8

0.6

0.4

0.2

Parameters: frequency f. current waveform

El1112.3c

~-fJ-\ \ \ \ l 1-

/ '.50H~ ~-1\ '" / ~-jj-\ f'.. l 1-

"- / T c--

'" )< '·50Hz ....... t---,

'-., --..........

-40 80 120 160 01 200

--l

Silicon Power Rectifiers Series SSiE11, SSiE12

Permissible case temperature ge versus forward current,

Permissible case temperature ge versus forward current,

mains operation 40to 60 Hz mains operation 40 to 60 Hz VRRM = 30Vto 150V

'c lie 170

1 160

150

140

130

~!'o, 0 ~ '\ '" -

_~v >-60'

-~v7 -120' - el!!v

160' -~AV/ - 180'

120

11 0 5 10

~ '-....

'" ~ "-~

~ '"\ ~'" /'" l>..;:

1--'\ r'\1 /'

\ L I I I I

20 30

DC i'-.

40

Ellf124 .

i"--..

""'""

50 A 60

--IFAv

Forward power dissipation characteristic curves.

VRRM = 300Vt0700V

'C lie o~ 1 17 """ ~

16 0 -"" f--

15 o ~v/ I- 60' o ~v 14

120' I- el!!v

Oh8O" r-~AV

13

12 01- 181'

~ I'\:

>-

V

L

10

F:0:: b... ~ --......

'\ "-"- -.....

/' 1'\ )? 1\ f../'\ >-. r\ >(

\ )

1\ L I I

20 30

nomogram for determining max. mean:orward currents (limit values) for various cooling conditions, mains operation 40to 60 Hz. VRRM = 30 Vto 150 V

'\

r---'p-"'

DC I--I--r--.. i'-.

40 50 A 60

--/FAV

0 i;Jt7 III RthCA 1-1'0 \.25 1~5- -1.7~- I Lb,J-~o' A·15'ol 30' 6f]' 90'

r-~-;jj o ~~_J~~V 90' 6

P, W

6 ./ 2.0-

120"

o~ 7'-'-J II II / ./1.,/ 2.25- I 120' 180' 2.5- 5

I V 2.75- 180'

0 II v.-,,: 3.0 K I 4 V/' V/:: V 3.5 Vi DC

0 I V / % V /' 4.0

t:::'" --:: 4.5-V 3 ;...-

~:8-/~ -: f::::::- f.-0

f"" __ :-::---- 7.0 - a 2

9.0,_

0 I /Y- ..", '::::" I-12.~_

ail" I r- W.O 1 I

o IA"" 0 10 15 20 25 30 35 A 40100 'C 80 60 40 20 0 0 10 15 20 25 30 35 A 40

-IFAV iJA- -lFAV

Forward power dissipation characteristic curves, nomogram for determining max. mean forward currents (limit values) for various cooling conditions, mains operation 40 to 60 Hz. VRRM = 300 Vto 700 V

El11125b 0 7 0

A:15~01 3~' I-- 6~' I,+-: R1hCA 90 120,

P, w I 6

t7.75 ~ I I-- .0 rJ5 1,5

2·f:

A·30'ol 60' 90' w P, 60 I r-~nfr o I'~d'lv I II ILL V / V V120'

225 - I--~ , 180' ./ A

O~T-J /' /2:5- -. T 1/ 180 V 2.75-

0 I ~v. v/::/ 3.0 _ 3.~ _

V:: V ..--4.0 /// DC 0 V/ /'/

4.5 -1/ 5.5_

50

40

30

0 /' ..-- 7.0_ ~

f.- --- f= ~iOo- I/~%: 0

- ~ 1 1 20.0 ~~P'" I

20

0 10 15 20 25 30 35 A 40 100 C 80 60 40 20 0 0

o 10 15 20 25 30 35 A 40

-[FAV 1JA- -/FAV

41


Forward characteristic curves Parameter: junction temperature ~ VR ;:;;; O.B VRRM. VRRM = 30 V to 150 V

0 ............... 40

IFSM A I 1 35 0 .............

-........... 30 0 --...... ~25;C

........ ........ 0 ...........

1"'175"C

0 ....... ...!.

O~lfSM~. ,&. --r-

'..J ,--- \, I VR

25

20

15

10 0

r-~!!!1~'

'r--

1 6 7 8 9 10

-- Halfwaves

0 40 1m.! A

1 350

300

15 0

20 0


Forward characteristic curves Parameter: junction temperature Sj . VR ;:;;; O.B VRRM. VRRM = 300 V to 700 V

I El11126b

........... I f-f--............... I

............... ",.25"C KI

---- r----.. --- ","175"C ....... r-:- ....... -f- -~ &. O~IFSM!~\

1"-- __

,!}R 15

f----10 0

1

,~

5678910

-Halfwaves

Max. mean forward currents IFAV(I) for heat sink E1 and mounting on printed circuit board, versus cooling air temperature SA, mains operation 40 to 60 Hz

IFAV

! 8

E11/128

7 l"'r-.,

6r-~t ........... __ c -- -~ I'-r-... ...... E1

5 (.40·60Hz ....... r--: ...... R:. , r--:~.,.

~-iJ ~~ 4rill T 3 (·40-60Hz

" 1020304050 60 70C80

A 10 0

0

0

--", Overcurrent characteristic curves forheatsinkE1, cooling type (S), SA = 45°C, mains operation 40 to 60 Hz. Parameters: basic load current IF(BL), current waveform

£111E12E1S .. -r--;:

0

0 IFi BLI" ~:Ar-=

0 4AF JA 1= 2A 1=

Of--f-- . ~ j KY i! t-f--f-- IfJBL' I

f!l!,-f!3.-£1 _ --_ IFl~' 5 -"18~ , --"80"'- ,

om 0.1 10 60s 10 100min

--I

42

Overcurrent characteristic curves forheatsinkE1, cooling type (S), SA = 45°C, mains operation 40 to 60 Hz. Parameters: basic load current IF(BL), current waveform

A 10 0

0

1 ~ 0-

0

0'-f-

Of-

of-I-,

t-

5 '4200 0.Q1

nl/E12 E1S

_·1

IFl~1 ~ __ ~'l ~~ IFI~vl

1~'20" , 0.1 10

---

IFIll. =~'iA-r--~-4A lA ' 2A lA OA

~ I

60s 10 100mJn

--I

Silicone Power Rectifier

Intermittent operation with basic load for heat sink E1. cooling type (5). SA = 45°C. mains operation 40 to 60 Hz, Parameters: basic load current IF(BL). cycle time 5D. current waveform --1r(Eltl

~'~j5~ 2 ~ 2,5~ 3~ 3,5A 4A 4,5A 5~ 5,6A 'IRtt,,, , hUll) I, ~~~~;J ;-J~Fo 1'-.:

r'...: I"

~ f\' \\1 /1s

l\. 3s lOs

" ~\'r 30s I~ ~V V lmm ~ ~~. 2:" 3min

~dJ ~ ~'\ 1 I~ 10m;n

11 ~I< 30min

I'\. ~ 'i< '-.:""'"

1'-. /I" 12 A 11 10 9 8 7 6 0 20 40 60 80 % 100

h(INT1-


-::==I,(O.) E1111211

, ~~;fl~1.5."2\2;~ I~ 1,\A4A, 4,5.~ 5 5.4A

I~ ~

~'\I\'\ ;..=1=-_-1-1- 1-'1'

'-I~-~j~ 1 ,~

I~ , rltE-rJ,J 11 10 6

43

Silicon Power Rectifiers Press·fit diode for 1100 V and 1500 V; 35 A

• Copper case press fit, knurled and tln·plated • Designed for high thermal fatigue applications • Polarity: Case = cathode, red stamp (SSiE43)

Case = anode, black stamp (SSiE44)

¢ .315

a Insertion tool

~ Diode

~ Diode mounting

"']"77"l<"--+--""'~,"", .216 Sheet metal Sealed body 1<:lF==f==f":Il1 (AI or Fe) (AI or Cu)


130

~ .4961 + .0020 - .0004 f .4961 + .0020 - .0004

Type Ordering Code Repetitive peak Surge peak reverse reverse voltage V RRM voltage VRRM

SSIE4360 C66047·A1066·A4 1100V 1100V SSIE4383 C66047·A1066·A5 1500V 1500V SSIE4460 C66047·A1066·A9 1100V 1100V SSIE4483 C66047·A1066·A10 1500V 1500V

44



Forward Conducting Max. RMS current

Max. average current

Max. peak voltage


Max./2t for fusing

Thennal Values Max. DC thermal resistance,

junction to case

Operating junction temp. range

Storage temperature range

Blocking Max. reverse leaking current

Mechanical Characteristics Max. press-in force

IF (RMS)

IF (AVG)

VFM

'FSM

12t

RSJC

8671b


55 Amps Tc = 120°C

35 Amps Tc = 120°C, half sine

1.2 Volts IFM = 50 Amps

300 Amps TJ = 175°C, 60HZ

340 A2sec TJ = 175°C,t=8.3ms

1.0C/w

-40°C to + 175°C

-40°C to + 175°C

4mA


(1) Tc = 25°C unless otherwise Indicated

45


10' I, A

4

10 2

Forward characteristic curves Parameter: junction temperature .9j

--

~

~

/ r. - Upper limit characteristi ,

10 6 4

//1 - - Typical characteris ic

=~,.17~·C

0 to 0,4

// I( 0,6

h c---c 'h5·C_ 17 I

II /I

0,8 1,0 1.2 1.4

Forward power dissipation characteristic curves Parameter: current waveform

24 I} w ! 20

0

0 0 ~v 18

16

14

12

10

8

6

O~v o 120' ~ 0 tf<lv o 180' o ~AV

180' 0

0

0 O.

E43/44

DC

"--; -',11-b" r---

50 tOO

Permissible case temperature Se versus forward current, mains operation 40 to 60 Hz

"C

~e 17

1 O~

160 -

~ ~ \ " " -- '\ .........

15 0 ~v/ '\

\ --->-60' -

0 ~v /I 120' Y

14

E43/44

~

" I)(' I'\. \ V

DC ,/

1,6 V 1,8

-v,

,3,

AlSO -I"v

- -

13 0 tf<lv 'y 1\ " "-180' ~AV /

0 180'

1 12

10

46

\ \

1\ 11 20 30

_\. I 40

'" 50 A 60 --/FAV


Transientthermal resistance for constant current Z(thIJC

~ 0,'

ZflhllC

0,7

0,5

O~

0,3

0,2

0,1

o 10'

1/

,/

5 10-2

Thermal resistance Llr

I

. S 10 5 '101 S

-_I

Parameters: frequency f, current waveform

I, JI K

W 1

2

,0

Q 8

0, 6

.4

2

0

\

\ '\

\

40

E43144 3b

~niJ-.I I-T __

/ '-SOH, I

/ ~-jj-"-"<... /

.I ,-

Tr---"'- IX I· SOH,

"- .......... r--.. '-.. -- '-

80 120 . 160 01 200

--.I


Forward power dissipation characteristic curves, nomogram for determining max. mean forward currents (limit value) for various cooling conditions, mains operation 40to 1000 Hz

70 I I 51 ..

7 I R,"~, I!. I I ~rc~_J/;~v :~·,ellO· 1.0 Ivv

r~··t'l ;'-30.01 60, I 90".t:

I 6

~f" , 120'

50l~1 / I,Bli- /. r-I'!-r-- 5

~ 1800

40 I 5.0 /V 4 ILL' DC

p,

1 :; p,

o 1

/ 3 II / ,//- % '// V

20 v:; /::: v: 2 II ~~ yo: ..-:::: ~ -~ ~

I- I-

=~ ~~ f:::"": ~ 1 I/, ~t

~ I '0 5 10 15 20 25 30 5 A 40 200 ·C 160

Maximum current characteristic curves Parameter: junction temperature Sj VA ~ 0.8 VAAM

0 40 'FSM A

! 35 0

30 0

250

-I

- J

E"3/4"

I - .1,.25·C

-....<:. I ............

........ I ----

.1,.175·C

-.<:' ...... 20 0

150 -/fSl,f~

100 1

--A r--\, ... /jvR

5 6 7 B 9 10

- - Half waves

::;::1:::+= -!O e

Overcurrent characteristic curves (mean value) for heat sink E 1, cooling type (5), SA = 45° C, mains operation 40 to 60 Hz. Parameters:

A basic load current IF(BL), current waveform

10

B

0 E43AI"'" E1 S

0 ,::::

0

0

0 lflBLI= ~A

0 4A lA ~ 2A ~

O~ ~ ~ ~ :~ r-

~ IF(BLI t I-~_£l,_~l _ -'_ ~,., ..... '-- '~1600~ I 5 160°1 I

OPI 0.1 10 60s 10

--I

100min

-;-: - ~I!§i I ~

0 o 0 5 10 15 20 25 30 35 A 40

Max. mean forward current hAV(I) for heat sink El and mounting on a printed circuit board versus cooling air temperature SA, mains operation 40 to 60 Hz, natural air cooling

B- ._---

A I

7 I

... I

6 ...........

........ ... ........ ...

........... 5

I'--- ... - y T'~"" '~ ~ ~~ ~T t-- -180" T 4- -=4

3 =i /·40-60Hz I i I I .'

A 10 0

B 0

10 20 30 40 50 60 70 ceo __ .1,

Overcurrent characteristic curves (mean value) for heatsink E 1, cooling type (5). SA = 45° C, mains operation 40 to 60 Hz. Parameters: basic load current h(BLI' current waveform . -

-t--

l-0

f-1 ~ 0 If~Y=~fA ~ 0 4A

"& lA 2A I lA

O~~

-.~ OA

~IBLI 1"-." ~ I .lrr.f 'Flovl

5~. ,

1200

QOl 0,1 100mm 10 60s 10

--I

47


Intermittent operation with basic load for heat sink E 1, cooling type (5), [)A = 25° C, mains operation40 to 60 Hz. Parameters: basic load current IF(BL), cycle time SO, current waveform

--htllli E45/44 .. 1.5A 21 ~~,3~ 3~A 4A ~SA ~A 5.5A 5.9SA l-~::;' iliA 2A ~~\' 3~ lSA 4A 4.SA SAl S~A S.7A

.""-1" lA

Q A OA ~

~jJ =-r=Lt

12 A 11

IF(INTl-

48

10

I" l"

~," ~

~10.:

~. -

-. .:t= ~\-~~iJ- ITI SD

A " \\~ v 1s OA l" 3. -0: 1\ 10. \~ 30. \~V/ lmin ~ l\ ,\

3min ~ - ~ I ~ 10min

~tB ~

V'S 30min I~

M= r,. -":! ~

"i:: "-.N -'-r-He- -

r-.. ---r c-

204060 80%10012 A 11 10

--ED hIIHn--

Silicon Power Rectifiers Series SSiE43A, SSiE44A Press-fit diode with avalanche characteristic for 1100 V and 1500 V; 35 A

• Copper case press fit, knurled and tin-plated • Designed for high thermal fatigue applications • Polarity: Case = cathode, red stamp (SSIE43A)

Case = anode, black stamp (SSiE44A)

~ 315

J+i Insertion tool

W Diode

=---+--.?""'~ ] ~ .216 Diode mounting

~F===f==~---r Sheet metal Sealed body ~ r (AI or Fe) (AI or Cu)

.130

~.4961 + .0020 - .UUU4 ¢ .4961 + .0020 - .0004

Type

SSiE4360A SSiE4383A SSIE4460A SSiE4483A

Ordering Code

C66047-A1066-A12 C66047-A1066-A13 C66047-A1066-A17 C66047-A1066-A18

Repetitive peak reverse voltage V RRM

Breakdown voltage at'R = 4MA, .9J = 25°C VBR

1200 V to 2000 V 1650 V to 2400 V 1200 V to 2000 V 1650 V to 2400 V

49



Forward Conducllng Max. RMS current

Max. average cu rrent

Max. peak voltage


Max. Pt for fusing

Thennal Values Max. DC thermal resistance,

junction to case

Operating Junction temp. range


Blocking Max. reverse leaking current

Mechanical Characteristics Max. press·ln force

'F(RMS)

'F(AVG)

VFM

'FSM

12t

RSJC

TJ Tstg

'RRM

8671b

Series SSiE43A, SSiE44A

55 Amps Tc = 120°C

35 Amps Tc = 120°C, half sine

1.2 Volts 'FM = 50Amps 300 Amps TJ = 175°C, 60HZ

390 A'sec TJ = 175°C, t = 8.3 ms

1.0CIW

-40oC to + 175°C

-40°C to + 175°C

4mA TJ = 175°C, VR = VRRM


(1) T c = 25°C un less otherwise Indicated

50


10' 'F A

10 6 4

2

Forward characteristic curves Parameter: junction temperature 8j

E43JU

i -I ~

i

I

/ /' '/ _ Upper limit characteristic

I // / __ Typical characteristic 10 6 4

1= ~"17:'C

0 10 0.4

// f 0.6

fl2 ~ tn5' C I

1/1 VI

0.8 1.0 1.2

Forward power dissipation characteristic curves Parameter: current waveform

0 24 I} w ! 20

18

16

14

12

10

8

0 0 ~v o 60' " ~v

o 120' ~ 0 If:!v. o 180'

o Et" o~ 0 __ + 0 o.

[.31«

DC

f'-...

50 100

1.4

Permissible case temperature Se versus forward current, mains operation 40 to 60 Hz

U3 .. " ~c ! 17

16

o~ ;::,... ~ t---

0 \ ~" "-

o ~v/ \ '\ ~ \ /- h _~C 60' -

/ I)( I'\.. ~v 120' Il( \ V

15

140

1.6 V 1.8 _v,

."

A 150 -IFAV

•

- -

~v' \ 1\ '\ "'-180'

/ \ \ "-f--~" 0f- 18r '\

I)

130

12

10 20 30 40 50 A 60

-_IFAV

Zrlhl)(

Series SSiE43A, SSiE44A

K W

Transientthermal resistance for constant current Zj'h)JC

0,8 ,-.,-rnnn,--"

0,7 f-

0.6 1-+-l-l+I++1l-H-+l+-i 7

0,5 f---+-f-HtItlf---hH-I+lf1f---+-i+I+H1t-+I-+++fil1

O,l f--+-+-+1-+++II-V-rl"++I+fl++----i-++

0.2 f--+-+-l.'41IIl-----+-+-+-II-J;) f-- -1 0,' b-"'t---H+tHiIl--t---H-f+++fl-I---+-'IH' -1+1+11--+-+1-+++1+

0,0':i·,---"-'--US.illJ,0.".,---'-'--US.illJ,0",,--'-'--US=,u,O,---'-'--LJSllil.110' 5

-_I

Thermal resistance L1r Parameters: frequency f, current waveform

I, 2 E.3/44 .3b

.1, K

~--B= W 1 ,0

o. 8

o. 6

.4

2

0

I----

\ 1\

\ '\.

'\

'---

40

"-'<:

"'" J'.,.

I

80

T ._ V '-50Hz., I_

V @)-B-17

A -

T i--R '·50Hz

"'" t-.... J--. -I-

120 . 160 .1 200

--.t

51

Silicon Power Rectifiers Series SSiE43A, SSiE44A

Forward power dissipation characteristic curves. nomogram for determining max. mean forward currents (limit value) for various cooling conditions. mains operation 40 to 60 Hz

p,

! 70

1 R",,. IT Ix 7

~~ 1'\:)5:., ~~ 6 19( '120· 1.0 IVY

r~.{J ,\-30'.1· 1 900 . .f-

~'~' 60·, ~

',ali- H ' 120"

50~, I-I':-r '5 If. 12.5 IL 1800

40 13.0 II III II 1/ loe

E43144

40

30 -t- L L IL 3 ~

v.::;;;.:;[:::' L 2G -I-- %!~

10 t- f-- 1-I/, ~j

0 _. ..

0 5 10 15 20 25 30 35 A 40

-lII~ 'C 16. 120

400 i FSM A

1 35 0

30 0

250

20 0

Maximum current characteristic curves Parameter: junction temperature 8j VR;:;; 0.8 VRRM

EOJ44

!

-t-- ",·25'C. --<. 1

, ............

",-175'C '"' -- ...:.. r---

---15 O~t,SMf7\\ /\ \_/'{VR

'-r-.

52

10 0

A 10 0

B 0

0

0

0

0

1 5 6 7 8 9 10 - Halfwaves

Overcurrent characteristic curves (mean value) for heat sink E 1, cooling type (5), SA = 25° C. mains operation 40to 60 Hz. Parameters: basic load current IF(BL), current waveform

E43AI44 .... 1-5

IFIIll=6A SA

~~ r= ZA f=

or-I-- ~ ~ ;! f-

r-r- [fUll t A·.£'l.·~l .. _ ".,

5 -<1807- '---1800~ ,

OPI 0.1 10 60s. 10 10Drnin -_t

~ p:::v

1 r-;- - 1

II 0

~ ~ o 0 5 10 15 20 25 30 35 A 40

Max. mean forward current IFAV(I) for heat sink E 1 and mounting on a PCB, versus cooling air temperature SA, mains operation 40 to 60 Hz, natural air cooling

E43/44

7 I

6 r--:-' r--- t-=: "

5 r---r::: r---~, r- jI 1---- - ::-.-r

~ ~ ~, 1-r I--- 180" r 4- ~11

3H I f.40'60Hz J I J. ,

A 10 0

B 0

0

0

0

10 20 30 40 50 60 70 C 80 -- ", Overcurrent characteristic curves (mean value) for heat sink E 1. cooling type (5), SA = 25°C, mains operation 40 to 60 Hz. Parameters: basic load current IF(BL), current waveform

E43A/44A El S ..

- r:::::::: I---. I--

1~~I=;~A ~ .. 4. J. Z'

f-- .. ,. 01-- r

.. ~ 0'

.~ .. , l"- ,,~ I 1-;;;;-IFlovl

S~2O:- 1200 !

0,01 0.1 10 60s 10 ,DOmm

--t

Silicon Power Rectifiers Series SSiE43A, SSiE44A

Intermittent operation with basic load for heat sink E 1, cooling type (S), SA = 45°C, mains operation 40t060 Hz Parameters: basic load current IF(Bll, cycle time SD, current waveform

E41/44 lO-hlBll k l.5A 21 2.1~ 3~ 3~A 4A ~5A ~A 5.5A 5.95A hOIl .. 1 ~"

k 1A '~ ~~ 2.1\, 3~ l.5A 4A 4~A 5AI 5~A 5.7A

I", ~ ." 1A ."' O. A ;...:

OA i'0

r+- _.

~jJ r-r-T i

12 A 11

hfiNTl-

10

" ." -0: ,", ~ 1;--.."-

~

~,

l\\ ;0 . :1= "' " \ Q A ." 11\ SO SO

\\~ vis OA ." 3s 10: ,," l\ lOs ,\\'< 30s

\~v/ 1mln ~ l\ ,,~ "'. ~7 3min

~~ r- -'l~

I "" 10mln "t: ~ .?< 30mln

~~ "\.~ --+ -

1\ '<: '-N c--!-- -

i'- ...r .-20 40 60 80 %10012 A 11 10

.. - -ED IF(INTl-

53

Silicon Power Rectifiers 40 AM P Avg; V RRM to 600 Volts

• Glass to metal construction • Economical, general purpose rectifier • High surge current capability • Excellent reliability



A B .677 .687 17.19 17.44 C .793 20.14 0 1.000 25.40 E .427 .447 10.84 11.35 F .125 .142 3.17 3.60 G .450 11.43 H .220 .249 5.59 6.32 2 J .375 9.52 K .156 3.97 M .590 14.98 Ola. N .080 2.03 P .140 .175 3.56 4.44 Oia.

Note 1: Standard polarity: Stud is cathode %·28UNF·2A Reverse polarity: Stud is anode Note 2: Full threads within 2% threads


Standard Reverse

S3041 0 R3041 0 1 N1184, 1 N1184A S30420 R30420 1 N1186, 1 N1186A

S30440 R30440 1 N1188, 1 N1188A

S30460 R30460 1 N1190, 1 N1190A

54

Series 304

p.../

A

00-203AB (00-5)


100 200

400

600

Silicon Power Rectifier Series 304


Reverse Blocking

Repetitive peak reverse voltage VRRM

Maximum peak reverse current IRRM

Forward Direction

Maximum average forward IF(AV)

current

Maximum surge current IFSM

Maximum peak forward voltage VFM

Maximum/'t


Thermal values

I't

Storage temp range Tstg

Operating junction temp range TJ


100V to 600V

2.0mA Tc =150°C

1N1184A· 1N1184· 1N1190A 1N1190

40 Amps 35 Amps Single phase, half·wave Tc= 155°C Tc = 144°C

BOO Amps 500 Amps One cycle of 60HZ sinewave

1.19V max. 1.45Vmax. IF = 90A; Tc =25°C

2600 A'S 1000A'S less than B.33 ms

10kHz 10kHz

- 65°C to + 200°C

-65°C to +190 oC

1.0oCfW


Base

Header

Weight

Steel stud and base with a #10·32 UNF·2A thread for through



Mounting Position

Mounting Torque

Dimensions

Approximately 0.5 ounce (14 grams)



In accordance with JEDEC DO·203Ab (DO·5) outline

55



100 I I

90 I 36b. I --

so

70

~ 60 ~ 1 50

e 40

8 "E 30

~ o 20 u.. ., ~ 10

·360·

~ .1sb· '" ·120· " _.6b.

t,~ l,~ -l!j' ..... ,..

', .. ' .. '-'

Conduction -angle

I

5&rles304, 1N1184A - 1N1190A

~ "~

" ~ " o 130140150160170180190200210220

Diode Case Temperature-·C


'"

700 600 500 400

300

~ 200 c. E <t: I c 100 ~ 80 ::> () 60 "0 t;; ~ 40 ~ 30 '" ::> o ~ 20 <1l C ~

'" .f: 10

I I

I I I /V1

25·C/; /190·C

If , 5&rles304, 1N1184A - 1N1190A

Series 304


~ ~ I

"0 CD t;j '5.

'" '" is Qj ;;: 0

Il..

70~~~~--~---4---4---4

40

30 360·

20 ~i~ 10

~\,- .. /' \, .... '" Conduction angle

0 0 10 20 30 40 50 60 Average Forward Current - Amperes


100

90

so

70

160

~50 .!. ~40 ::>

~30 <II

~20 u.. ., 2'10

~ 0

*360·

~ *180· ~ *120· ........

*~o·

I I I I I 360· __

~/~ ;; ... :, ... .:.--"'/ ' .. ,'

Conduction --angle

I I I I I

1N1184 - 1N1190

"-~ ~ ~ ~

~ o 0.5 1.0 1.5 2.0 2.5 3.0 3.5 120130 140 150 160170 180 190 200210

Diode Case Temperature-·C Instantaneous F-orwara Voltage-Volts

56


Figure 5 Maximum power dissipation versus forward current.

80

70

60

50

'" 40

~ I 30 -0 Q)

.~ 20

'" '" ~ 10 ;: o u. 0

I I I

360'

I!~ ,I!~ L!-t, ;' ..

'.' ',-,'

Conduction *360'C angle

/ *180'

*120' :// *60'/h V

~ ~ lN1184 - 1N1190

Y V o 10 20 30 40 50 60

Average Forward Current-Amperes

Series 304


700 600 500 400

Ul 300 <ll

~200 E <!

I I I I ltVT I 25°C/ V190°C

I if !

I c 100 ~

80 :; U -0 60 ro ;: 40 0

LI- 30 '" :::J 0 <ll 20 c

I 1N1184 - 1N1190

I co C co en 5 10

0 0,5 1.0 1,5 2,0 2.5 3,0 3,5


57


Figure 7 lI'anslent thermal Impedance

~ 1.2 ~ '" CI>::: ,c<ll I- 3: .9 ~u <Il" l) I .S .9fl c c .g~ .3 OCl> co. f--~.E 0

.001

,//

l,.-./

.01 0.1

Time in Seconds

Figure 9 Maximum surge current

'" g- 800

-

1.0

FigureS Maximum surge current at 2S"C

'" g- 800

1 700

~ 600

8500

~ 400

~ 300 u. ~ 200 ,f 100

~

"" "" ""-~

f- Series 304, f- 1N1184A - 1N1190A

1 1 1 IJ 10.0 100.0 1 10

Time in Cycles

1700 ~ SOO

8 500

~ 400

~3oo

1N1184 - 1N1190

~ ~

u. ~2oo

I"-- r--,f 100

1 10 100

Time in Cycles

58

Series 304

....... r--t--

100


• Glass to metal construction • Low forward voltage drop

• Excellent thermal fatigue capability

• High surge current capability • Excellent reliability

Dim. Inches MIllimeter

Minimum Maximum Minimum Maximum

A B .677 .687 17.19 17.44 C .793 20.14

Notes

D 1.000 25.40 p./ E .427 .447 10.84 11.35 F .125 .142 3.17 3.60 G .450 11.43 H .220 .249 5.59 6.32 2 J .375 9.52 A K .156 3.97 M .590 14.98 Dia. N .080 2.03 P .140 .175 3.56 4.44 Dla.

Note 1: 5tandard polarity: 5tud Is cathode %-28 UNF·2A Reverse polarity: 5tud is anode Note 2: Full threads within 2% threads


Standard Reverse

53410 R3410 1N1184,1N2459 53420 R3420 1N1186, 1N2461, 1N2788, 1N3968,

1N4525

53440 R3440 1N1190, 1N2285, 1N2467, 1N3970, 1 N3969, 1 N4526

53460 R3460 1N1190, 1N2285, 1N2467, 1N3970, 1N4527

53480 R3480 1N2286, 1N3766, 1N3971, 1N4528 534100 R341 00 1N2287, 1N3768, 1N4529 534120 R34120 1N2288, 1N4530, 1N5332

Series 34

H-----!;K 1

A;;;;=~;""~ DO·203AB

(00·5)


100 200

400

600

800 1000 1200

E j

59



Reverse Blocking



Forward Direction




Maxlmum/'t


Thermal values

Storage temp range




Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

60

100V to 1200V

2.0mA

Series 34

45 Amps Single phase, half·wave rating at

Tc=122°C 700 Amps

1.15Vmax.

2100 A'S

10kHz

One cycle of 60HZ slnewave

IF = 90A; Tc = 25°C

less than 8.33 ms

-65°Cto + 200°C

-65°Cto + 190°C

Steel stud and base with a #10-32 UNF·2A thread for through


G lass to metal construction.




In accordance with JEDEC DO·203AB (DO·5) outline



60 *360° 360°

I!~ l:~ 50 W\ ;' ..

'-' '-'

Conduction angle

40

30

20

10

Series 34


240

220

200

180

160

140

120 (/)

~ 100

I 80 '0 Q)

co "1i

60 (/)

40 (/)

0 Q; 20 ;: o

IIJ W

*120' *360°

*60°/ I 1*180° / / II / / '/ if

/ ~ / / !/I /

/1 'I V 'II V 360°

V I!~ I/~ W" ;' '-' ',.,'

Conduction angle

o a. 0 ./ 110 120 130 140 150 160 170 180 190 200 0 20 40 60 80 100 120 140 160180

Diode Case Temperature-oC Forward Current-Average Amperes

61



1000

(/) Q)

~ 100 E ~

I c ~ OS

U ""Cl

Cii 10 ~ o

LL Ul ::J o Q) C Ol C Ol u; .s 1.0 0

V /

/ ,/

// r I

/ il 190°C/ 25°C

( I

1.0 2.0

Series 34

../' /

3.0



~ 1.2 ~ Ul Q)~ .cOl r- :;:: .9 ~C3 Olo

u 1.6 £~ c c 2~ .3 (J Q) cO. --~E 0

.001

/

/ I

1

.01 0.1

Time in Seconds

62

~/

!

1.0

FigureS Maximum surge current at rated load Ul

~ 700

1 600

~ 500

8400

~ 300

~ 200 LL

~ ~

"-.

"@ 100 /f.

10.0 100.0 0 1

Time in Cycles

' ...........

~

10

-100


• Glass to metal construction • low leakage current series • High surge current capability • low thermal resistance • High case temperature • Will meet high reliability requirements



A B .677 .687 17.19 17.44 C .793 20.14 0 1.000 25.40 E .427 .447 10.84 11.35 F .125 .142 3.17 3.60 G .450 11.43 H .220 .249 5.59 6.32 2 J .375 9.52 K .156 3.97 M . 590 14.98 Dla . N .080 2.03 P .140 .175 3.56 4.44 Dla.

Note 1: 5tandard polarity: 5tud Is cathode '1.·28 UNF·2A Reverse polarity: Stud Is anode Note2: Full threads within 2% threads

Peak Catalog Number Reverse

Standard Reverse Voltage

53610 R3610 100 53620 R3620 200

53640 R3640 400

53660 R3660 600

53680 R3680 800 536100 R361 00 1000

536120 R36120 1200

p

A

Series 36

00-203AB (00-5)

63



Reverse Blocking



Forward Direction




Maximum I't


Thermal values

Storage temp range




Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

64

Series 36

VRRM 100V to 1200V

IRRM 2.0mA Tc= 150°C

IF(AV) 70 Amps Single phase, half-wave rating at

Tc =138°C

IFSM 1200 Amps One cycle of 60HZ sinewave

VFM 1.25V max. IF = 200A; Tc =25°C


10kHz

Tstg -65°C to + 200°C

TJ - 65°C to + 190°C

ReJc 0.65°CIW

High strength copper stud and base with a 1/4·28 UNF-2A thread for

through mounting on a heat sink. Nickel plating of base prevents

corrosion.




30 Inch pounds maximum

In accordance with JEDEC DO·203AB (DO·5) outline


Figure 1 Figure 2 Maximum load current versus case temperature Maximum power dissipation versus forward

current

120

110

100

90

'" 80 ~ ~ 70 E "! 60 g> Q; 50

~ I 40 C ~ 30 ::; () 20 "0

*360°

"'-,"'-*180°

.1ioo

*6bo

360° -

~/~ :;..,. ... / \'.'/ "-~'

Conduction angie

I\.. ~\ '\ ~ ~ ~ "-~ "~

.l!l

~ I

"0

~ c. 'iii

'" (5 "l~

~ iii 10 Q; ~ ~ & 0 ~

100110 120 130 140 150160170 180 190

Diode Case Temperature-oC

100 *360°

90

80

70

60

50

40

30

20

*180° I *120° III /; rl

*60° It/ )

II; V /1/ 360° -

/J ~i~ .-

II" ~\ /' \, ,/

'." '.#

Conduction -

/ angle I I I I

10

o o 15 30 45 60 75 90 105

Forward Current-Average Amperes

65


Figure 3 Maximum fOlWard characteristics

10,000

1,000

1 c: ~ :; ()

"E ~ 100

& en :l o Q) c:en !!~ C:Q)

~~

25°C...,-,::: ~

#' 1/

L II

I I /I

~C-

E« 10 o 0.5 1.0 1.5 2.0 2.5 3.0 3.5


Figure 4

Series 36

FigureS Transient thermal Impedance I

Maximum surge current at rated load

~ .7 !ij -g .6 a. § .5 (ij E .4

~ .3

&i::: .2 .~~ .1 al-t=~ 0

/ -I-

.001 .01 0.1

Time in Seconds

66

"'-+-)/

V

10

en g-1400

11200

~1000 a 800

"0 600 ~ ~ 400

~ ~

100

200

a

~ --........

I"-... --t

1

Time in Cycles

-............

r---1-1-

I

10 100


• Glass to metal construction • Economical, general purpose silicon rectifier • Soft recovery • High surge current capability



A B .677 .687 17.19 17.44 C .793 20.14 D 1.000 25.40 E .427 .447 10.84 11.35 F .125 .142 3.17 3.60 G .450 11.43 H .220 .249 5.59 6.32 2 J .375 9.52 K .156 3.97 M .590 14.98 Dia. N .080 2.03 P .140 .175 3.56 4.44 Dia.

Note 1: Standard polarity: Stud is cathode %·28UNF·2A Reverse polarity: Stud is anode Note2: Full threads within 2'12 threads

Peak Catalog Number JEDEC Reverse


S306010F R306010F 1 N2129A 100 S306020F R306020F 1 N2131A 200

S306040F R306040F 1 N2135A 400

S306060F R306060F 1 N2138A 600

S306080F R306080F 800

S306100F R306100F 1000

S306120F R306120F 1200

Series 306

DO·203AB (00·5)

67



Reverse Blocking



Forward Direction




Maximum,.t


Thennal values

Storage temp range




Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

68

100V to 1200V

4.0mA

Series 306

70 Amps Single phase, half·wave rating at

Tc =125°C

1200 Amps

1.25Vmax.

6000 A'S

10kHz


IF =200A; Tc =25°C

less than 8.33 ms

-65°C to + 200°C

-65°Cto + 190°C

0.80 0 CIW

Steel stud and base with a 1/4-28 UNF-2A thread for through

mounting on a heat sink. Nickel plating of base prevents corrosion.





In accordance with JEDEC DO-203AB (00-5) outline



(f)

120

110

100

90

80

~ 70 a. ~ 60 Q)

16' 50 Q; 1 40

~ 30 ::; U 20 "E C1l 10 1: o

LL 0

3600

I/~ ~,~ *360° ~\ ,:' \ .. : " '-'

"- Conduction

",,-angie

*180° "t\.

I-I "-~ "-1'-.

- *120° ~ ~'\ ~ ~'\

*60°

10 ~ ~ ~ ~~

r\ 1 00 110 120 130 140 150 160 170 180 190

Diode Case Temperature-° C

Series 306

Figure 2 Maximum power dissipation versus forward current 100

*360°

90

*1800 /

*120 0 /IV II 7

*60° 1;// -; 7J r. lff *3600

/) I/~ l:~

80

70

60

50

en 40 tl

-~ 30

.Sl 1120 -~ " ~\ / '.

, .-. "

j '-' ',.,'

Conduction -

V angle I I I I

is 10

j ~ 00 30 45 75 90 105 15 60


69



10,000

.L c: ~ ::J ()

"E

1,000

~ 100

& '" ::J

:il a~ cO; .!!!a. ~~ 10

25°C..-:::: Ib'

#' /

.J VI

J / I,

~oC-

o 0.5 1.0 1.5 2.0 2.5 3.0 3.5



.9 ~ ~ .8 () .7 °cb u .6 c: ~ .5 ~ .5.4 ~ .3 lD F .2 E .1 CD

'i11 0

i/

/ V _ .....

~ .001 .01 0.1

Time in seconds

70

v-

10 100

FigureS Maximum surge current at rated load

l!l.1600

~ 1400

~ 1200

81000

~ 800

~ 600 & -'" 400

i 200 1

.......... I'....

........ .......

Time in Cycles

.......... .........

10

Series 306

r--r-+-

100


• Glass to metal construction • Low leakage current series • Highest current DO·5 available • High surge current capability • Excellent thermal fatigue capability • Low thermal resistance • Will meet high reliability requirements



A B .677 .687 17.19 17.44 C .793 20.14 D 1.000 25.40 E .427 .447 10.84 11.35 F .125 .142 3.17 3.60 G .450 11.43 H .220 .249 5.59 6.32 J .375 9.52 K .156 3.97 M .590 14.98 N . 080 2.03 P .140 .175 3.56 4.44

Notes

2

Dia .

Dla.

Note 1: 8tandard polarity: 8tud is cathode '!4·28UNF·2A Reverse polarity: 8tud is anode Note 2: Full threads within 2% threads



83710 R3710 100 R3715

83720 R3720 200

83740 R3740 400

83760 R3770 700

S3780 R3780 800 837100 R37100 1000

837120 R37120 1200

M

00-203AB (00-5)

Series 37

71



Reverse Blocking Repetitive peak reverse voltage


Forward Direction Maximum average forward current



Maximum I't


Thermal values Storage temp range



Mechanical Characteristics Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

72

100V to 1200V

2.0mA

Series 37

85 Amps Single phase, half-wave rating at

Tc =132°C

1500 Amps

1.15Vmax.

9300 A'S

10kHz


'F = 200A; Tc =25°C less than 8.33 ms

- 65°C to + 200°C

- 65°C to + 190°C

High strength copper stud and base with a 1/4-28 UNF-2A thread for


corrosion.





In accordance with JEDEC DO-203AB (00·5) outline



120

110

100

90

~ 80 Q)

~ 70 « Q) 60

~ Q) 50 ~ I 40

C !!? 30 :; () 20 "0

10

~

*3Joo\

1\ *18100

*120°

I *60°

I 360°

I(~ ~,~ l!.J :' "

\ \.,/ ',_#'

'\ Conduction

""- angie

,~

~ [\ ~

"" ~ ~~ ~

~

Series 37


ID 3:

120

105 f----I--+---l--,+--,-,---*---l-___1

90 f----+-__+_-

75f----I--+-~+f+--~--l-___1

60f----I--+~~-+--~--l-___1

45 1----I--I-lIfI--1 360°

~/~

151--~--+---+--,--~-~--1 tti ~ .f \ o ~

100110120130140150160170180190 O~ __ L_~ __ ~ __ -L __ -L __ -L~

o 20 40 60 80 100 120 140

Diode Case Temperature-OC Forward Current-Average Amperes

73



10,000

1,000

1//

';

;j

'ell '/ 191 2 'e

I

.5 1.0 1.5 2.0 2.5 3.0 3.5


Figure 4 li'ansient thermal Impedance

0.7

«I 0.6 E<Il ~~ 0.5 '; (30.4 gj • (.) 10.3 .9~ c: 1ij 0.2 .9 '0 g ~0.1 ~.E 0

1/

V l-I-

.001 .01 0.1

Time in Seconds

74

vir

1.0 10


~1600

11400

~1200

81000

~ 800

~ 600 u.. ~ 400 Q)

a.. 200

r--.. ""-.... ~

""-.... r--..

f---

100 1

Time in Cycles

J'..1'

i ~ t-.... I

10

't---. t--

100


• Glass to metal construction • Low forward voltage drop • Designed for a wide range of applications • Economical, high current, low voltage rectifier • High surge current capabilities



A B .677 .687 17.19 17.44 C .793 20.14 D 1.000 25.40 E .427 .447 10.84 11.35 F .125 .142 3.17 3.60 G .450 11.43 H .220 .249 5.59 6.32 2 J .375 9.52 K .156 3.97 M . 590 14.98 Dia . N .080 2.03 P .140 . 175 3.56 4.44 Dia .

Note 1: Standard polarity: Stud is cathode '!4·28UNF·2A Reverse polarity: Stud is anode Note 2: Full threads within 2'12 threads



S307010F R307010F 100 S307020F R307020F 200

S307040F R307040F 400

S307060F R307060F 600

M

A

DO·203AB (00·5)

Series 307

75








Maximum/'t






Header

Weight

Mounting Position

Mounting Torque

Dimensions

76

100Vto 600V

4.0mA

Series 307


Tc= 105°C

RSJC

1500 Amps

1.1V max.

9300A'S

10kHz

One cycle of 60HZ sinewave

/F=200A; Tc =25°C

less than 8.33 ms

-65°Cto +200oC

-65°C to + 190°C

0.80oCIW

Steel stud and base with a 1/4-28 UNF-2A thread for through




May be mounted in any pOSition


In accordance with JEDEC DO-203AB (DO-5) outline



rtl

120

110

100

90

80

70

~ Q) 60 Co E ~ 50 fij' - 40

! 30 c: ~ 5 20 ()

'E ~ 10

~ o

"'- '3~0°

'" '180' "-~ I\.

U-:' ~ '\

'1200 I" :\. "\

~ '600

"""

1 3600

I/~ l,~ -

l!J' · "

'.' ' .. -Conduction angie -

\

~ \ ~ \

" ~\ '" ~ ~ ~ , 100 110120130140150160170180190

Diode Case Temperature-0 C

Series 307


120 ...--..--..--,.--,---...... ---,---,

1 05 I---I-----i--+--+r--fl---+_~

901---1-----i--+~-r~_r-+_~

60r-~~~~~+_+---r__+--_1

rtl 45 I---I---H+I-++--+-_r-+_~ ~

~ ~ 30 r-~:-HHI----+

* Co .~

is 15 1---H.1f--f--j L ... J·,./ ' .. Conduction angle

Q;

~ ~ OL-_L-_~_~_~_~~_~ o 20 40 60 80 100 120 140


77



10,000

~ 1,000 25°~ ::.-f-

Q) Co E « .L c ~ :; ()

1 100

~ <Il

'" o Q)

16 ~ iii E 10

./.,;

190a C = U

/

I h

I

I ,

c---c---

o 0.5 1.0 1.5 2.0 2.5 3.0 3.5


Figure" Transient thermal impedance

~ .9 '-' .8

1 .7

Iii .6 -0

~ .5 .E <ii .4 E Q) .3 ~ <: .2 .!!! rn c

.1 :,....,.... ~ o

.001

I

/ V

.01 0.1

Time in seconds

78

V

10 100


~ 1600

~ 1400 I

&5 1200

8 1000

~ 800

~ 600 ~ ..I< 400 ~ a. 200

, '"""',

'""'" r-.... ' ..... .............

10 Time in Cycles

Series 307

....... ~ -

100

Silicon Power Rectifiers Series 42 125 AMP Avg; VRRM up to 1200 Volts

• Glass to metal construction • Available in two types of lead configurations • 80ft recovery • Rugged construction for Industrial service



A 8 1.050 1.060 26.67 26.92 C 1.166 29.61 D 4.3 4.7 109.22 119.38 F .610 .640 15.49 16.25 DO-205AA G .213 .233 5.41 5.66 Top Stud

H .745 18.92 (00-8) J .344 .373 8.74 9.47 K .276 .286 7.01 7.26 M .465 .515 11.81 13.08 R .850 21.59 Dia. T 1.426 36.22 AA .427 .437 10.84 11.09 BB 3 CC .407 10.33

Note 1: 8tandard Polarity: 8tud is cathode 3/8·24 UNF·2A Reverse Polarity: 8tud is anode Note 2: Full threads within 21/2 threads Note 3: '!4·28UNF·2A

JEDEC Peak Catalog Number Numbers Reverse


84210 R4210 1N412B, 1N1397, 1N2427, 1N2437, 100 1N3140,1N3288,1N4878

84220 R4220 1 N413B, 1 N1399,1 N2429, 1 N2439, 200 1N3142,1N3289,1N3972

84230 R4230 1N1400,1N2431,1N2441,1N3290 300

84240 R4240 1N1401, 1N2433,1N2443, 1NH3921, 400 1N3973

84250 R4250 1N1402,1N2434,1N2444,1N3292 500 84260 R4260 1N1403,1N2435,1N2445,1N3293, 600

1 N3974

84280 R4280 1 N3294, 1 N3975 800

842100 R42100 1N3295 1000

842120 R42120 1N3296 1200

Note: All Series 42 Rectifiers are available with either a lead terminal or top stud terminal. When ordering a top stud device, add the suffix "TS" to the catalog number.

79






Maximum surge current Maximum peak forward voltage Maximum I't Maximum recommended

operating frequency

Thermal values Storage temp range Operating junction temp range Maximum thermal resistance

junction to case


Header Weight Mounting Position Mounting Torque Dimensions

80

Series 42

100V to 1200V 5.0mA Tc= 150°C

125Amps Single phase, half·wave rating at Tc =130oC

1800 Amps 1.2Vmax. 13500 A'S

7.5kHz

One cycle of 60HZ sinewave IF =200A; Tc =25°C less than 8.33 ms

Tstg - 60°C to + 200°C TJ -65°Cto+190oC

RSJC 0.4 °CIW

High strength copper stud and base with a 3/8-24 UNF-2A thread for through mounting on a heat sink. Nickel plating of base prevents corrosion. Glass to metal construction. Approximately 2.75 ounce (78 grams) May be mounted In any position 125 inch pounds maximum In accordance with JEDEC DO-205AA (008) outline or Top Stud



180

165

150

3~00 I I I _

lif&. ~,~ -

I.~.J" ,:' " *360° '.- "-~' -

135 ~ Conduction

\ angle -*180°

~ 120 iii ~105 « Q) 90 OJ til iii 75 ~

1 60 E

45 ~ :; u 30

"120°

"\ \ "60° ~' 1\ "-

"",- ~\

'" '\ ~ ~~ ~

"0

Series 42


400r--.---.---,--.--..---n-TO

360~-4---+--~--~+-+-~tiL~

rJ)

~ 160

1 "lJ

~ Q.

'00 rJ)

(5

120 ~-4---y.--#-k-

80 ',_.' ~\

\ co ~ 15 ~ ~ 0 ~

40 Conduction angle

110 120 130 140 150 160 170 180 190 200- 0 0 40 80 120 160 200 240 280


81



10,000

",1000 ~ Q) c. E « 1

~ 100 ::; U "0

~ tf '" 10 ::l o Q) c co c: ~ £; 1.0

o

~ ::::..--/7

/1 1/

/ / I

190·C I / 25°C

I /

1.0 2.0 3.0


Figure 4

Series 42

FigureS Transient thermal Impedance Maximum surge current at rated load

.56 r-r-,-'TTT-,--,--TTr-,----ro"T'r--..-r-r.,.,--r-r~ ~1800 iii .52 ~1600 E .48 H-+-I-++--+-I-+t-H-+-I*-+-H+H-+++-++I 1 16 _ .44 H-t+tt-t-+ttt--+--H-tt---H-Htt--H++tI -.t:: iii .40 H-t+tt-t-+ttt--+--H-tt---H+t.;I+--H++tI ~1400 f- ~ .36 H-++++-+--H++-+-++t-Hf--H."I-tI-t++-f-tI 5l U .32 H-t++t-t-+ttt--+--H-tt--l7'1++++--++++tI 81200 co °1 .28 u .24 H-+++t-+-++++-+-+JIoft---H+t++--+t++tl ~1000 B 2l .20 H-+-++t-+-+tt+-b,.f-lf-lt--H+++t-++++tI ~ 800 c ~ .16 H-++tt-t-+t:J;I."'9---H-tt---H-Htt--H++tI tf .g al .12 1:::=!=:l:::Ff!-t4-ttt--t---H-tt---HTttt-Ttttti (J c. .08 H-t++t-t-++++-+--H-tt---H+ttt--H++tI ~ 600 § E .04 H-+++t-+-++++-+-+-i-tt---H-H++--+t++tl Q)

...., - 0 L-l--'.-'-L1--'.-'-.LJ.L-'---'-.JL.LL--'-.J...Ll..l..L...Ll..l...Ll.J a. 400

~ ~

"- :"-...

.001 .01 0.1 1.0 10.0 100.0 1


82

i'---

~ ~

r--10 100

Silicon Power Rectifiers Series 43 150 AM P Avg; VRRM up to 1200 Volts

II Glass to metal construction II Available In two types of lead configurations II Highest current DO-8 available .. Low thermal resistance II High surge current capability II Excellent reliability

Dlm_ Inches Millimeter

Minimum Maximum Minimum

A B 1_050 1_060 26_67 C 1_166 D 4_3 4_7 109_22 F _610 _640 15_49 G _213 _233 5.41 H _745 J _344 _373 8_74 K _276 _286 7_01 M .465 _515 11_81 R _850 T 1.426 36_22 AA .427 .437 10_84 BB CC .407 10_33

Note 1: 5tandard Polarity: 3/8-24 UNF-2A Reverse Polarity: Note 2: Full threads within 21/2 threads Note 3: %-28UNF-2A

Catalog Number

Standard Reverse

54310 R4310 54320 R4320

54330 R4330 54340 R4340

54350 R4350 54360 R4360

54380 R4380 543100 R341 00

543120 R43120

Maximum Notes

26.92 29_61

119_38 16_25 5_66

18_92 9.47 7_26

13_08 21_59 Dla_

11_09 3

5tud is cathode 5tud is anode

JEDEC Numbers

1 N412B, 1 N3288A, 1N3289A,

1N3290A, 1N3291A,

1N3292A, 1N3293A,

1N3294A, 1N3295A,

1N3296A,

~~/BB

t 1 -, T

H

J F A -----1

Top Stud 00-205AA

(00-8)


100 200

300 400

500 600

800 1000

1200

Note: All Series 42 Rectifiers are available with either a lead terminal or top stud terminal. When ordering a top stud

device, add the suffix "TS" to the catalog number_

83



Reverse Blocking



Forward Direction




Maximum 1'1

Maximum recommended

operating frequency

Thermal values

Storage temp range


Maximum thermal resistance

junction to case


Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

84

100V to 1200V

5.0mA

Series 43


Tc = 125°C

2500 Amps

1.1Vmax.

26000 A'S

7.5kHz


IF =200A; Tc =25°C

less than 8.33 ms

-65°Cto + 200°C

-65°Cto + 190°C

0.35°CIW



corrosion.





In accordance with JEDEC DO-205AA (D08) outline or Top Stud



3600

I!~ I/~ 200 f--.-3-160-0

--+-+- --Lf'W"". >:'-"'-".,--'/'-'="':-"'-".,-;/-

Conduction

en angle

~ 150 I-::-i~,,",,+--".:l-+-t--+--t-_j--I DE

<x: Q)

Cl

~100 f----+-~~~~~t--+--t-_j--I ~ I c ~ ~ 50f---~--t--+--t--+~~~---t--j u 1:l (ij

Series 43


600r--~---+-+-~-+-+-~

500r--~---+~~~--~~

400r-----r---~--++~-,~_+--~

en 300r---+--+-~-~+---+-~

I I

1:l Q)

til D'c;; en o iii :::

200 r-----'r-I--H-A- 360°

I!~ t,~ 100 f----,f.h'--- W\,.,/ \,j

~ J: o &

110 120 130 140 150 160 170 180 190 200

Conduction angle

0""-------''--------'-------'--------'----' o 100 200 300 400


85



10,000

./

# 'Y' ",1000 ~ OJ c. E « I c ~ 100 :; ()

-0 (ij

~ o ~ 10 ::J o OJ c Ol

C Ol iil E 1.0

o

" //

VI 1/

I I 190°C /1 25°C

I

1.0 2.0

-

3.0



~ .36 ~ UJ OJ~

~~.27 ~o ~ 0, 18 .8~ CC . Q~.09 g8. ~§ 0

v""'" -

.001 .01 0.1

Time in Seconds

86

..--/

/

1.0 10.0


'" c. E

12100

~1800

81500

~1200

~ 900 u. ~ 600 OJ

0.. 300

~ ~

"

" 1 10

Time in Cycles

Series 43

........

-----100

Silicon Power Rectifiers Series 53 250 AMP Avg; VRRM up to 1200 Volts

• Ceramic header with top stud or flex lead • High surge current capability • Excellent reliability



A B 1.237 1.243 31.41 31.57 C 1.360 34.54 D 5.00 6.00 127.00 152.40 F .797 .827 20.24 21.00 G .302 .322 7.67 8.17 0O-205AB H 1.377 34.97 Top Stud

(00-9) J .660 .749 16.77 19.02 2 K .338 .348 8.58 8.83 M .665 .755 16.89 19.17 R 1.020 259.08 T 2.419 61.44 AA .552 .562 14.02 14.27 BB 3 CC .605 15.36

Note 1: Standard Polarity: Stud is cathode 3/4·16 UN F·2A Reverse Polarity: Stud Is anode Note 2: Full threads within 2 1/2 threads Note 3: 3/8·24 UNF·2A

NOTE: All Series 53 Rectifiers are available with either a lead terminal or

top stud terminal. When ordering a top stud device, add the suffix

"TS" to the catalog number.

JEDEC Peak Catalog Number Numbers Reverse


S5380 R5380 1N2066,1N3172,1N3172A,1N3741, 800 1N3979

S53100 R53100 1N2068,1N3174, 1N31744, 1N3742 1000

S53120 R53120 1N3743 1200

87








Maximum/'t

Maximum recommended

operating frequency




junction to case


Header

Weight

Mounting Position

Mounting Torque

Dimensions

88

Series 53

800V to 1200V

10mA Tc =150°C


Tc= 122°C

RSJC

4500 Amps

1.2V max.

84000 A'S

7.5kHz


/F=300A; Tc =25°C

less than 8.33 ms

-65°Cto +200oC

-65°Cto +190oC

High strength copper stud and base with a 3/4-16 UNF-2A thread fOI


corrosion.

Ceramic header construction.



300 inch pounds ±I· 25 Inch pounds

In accordance with JEDEC DO-205AB (009) outline or Top Stud



360

330

300

270

",240 ~ ~210 E

<l:: 180 (]) OJ

~ 150 >

1120 C ~ 90 :; u 60

~o

.180~ ~

1.6Jo~ ~ ~~ ~ ~

1"-~

'"

360°

~/~ -

-;;...,' ...... '~_"I ••• ..'

Conduction -angle

-

~

~ '\ ~ ~ ~ ~~

Series 53

Figure 2 Maximum power dissipation versus forward current 800r--.---'--.---'-~-'~",

400r-~---+-+.H~~--+---r-~

~ 300r-~--~~~---+---+--~--~ I

"0 (])

iii 200 I---+----/-;¥A---Q.

"iii

'" i:5 Q; ;: o

100 r--IAI'---+-

'\ 0110120 130 140 150 160 170 180 190 200 0... 100 200 300 400 500 600 700

Diode Case Temperature-oC Forward Current-Average Amperes

89



10,000

0 1000 i!? Ql 0. E « I ~ 100 :; ()

"E ~ ~ o 10 ::l o Ql c: ca 'E ca u; .f: 1.0

190°Cj

/

.J

/11

/ / /

/

II r7 1 25°C

/

/ /'

IP

O.B 0.8 1.0 1.2 1.4 1.B 1.8



.21

~ .18

~~.15 I-S; 5lU·12 ~ol.09 oQl -0 §lij.06 .-'0 g~.03 ~.§ 0

V

1-1- I-

.001 .01 0.1

Time in Seconds

90

)

1/

1/

1.0 10

Series 53


~4800

14200

~3600

83000

~2400

~1800 u.. ~1200 Ql c.. BOO

t'-... .........

)'-....

"~

100 1

Time in Cycles

t--

1'--)'-....

J'-..-.. I"--1---

10 100

Silicon Power Rectifiers 300 AMP Avg; VRRM up to 600 Volts

• Glass to metal header construction • High surge current capability • Two case styles available • Soft recovery • Rugged construction for industrial service • Highest current 00·9 available



A B 1.237 2.243 31.41 56.97 C 1.360 34.54 0 4.948 5.242 125.67 133.14

Top Stud F .797 .827 20.24 21.00 G .302 .322 7.67 8.17 H 1.377 34.97 J .660 .749 16.77 19.02 2 K .338 .348 8.58 8.83 M .665 .755 16.89 19.17 R 1.020 259.08 T 2.419 61.44 AA .552 .562 14.02 14.27 BB 3 CC .605 15.36

Note 1: Standard Polarity: Stud is cathode %·16 UNF·2A Reverse Polarity: Stud is anode Note 2: Full threads within 2112 threads Note 3: 3/8·24 UNF·2A

Catalog Number Peak Reverse Voltage Standard Reverse

S50410 R50410 100

S50420 R50420 200

S50430 R50430 300

S50440 R50440 400

S50450 R50450 500 S50460 R50460 600

• All Series 504 Rectifiers are available with either a lead terminal or top stud terminal. When ordering a top stud device, add the suffix "TS" to the catalog

number.

Series 504

DO-205AB (00-9)

91








Maximuml't






Header

Weight

Mounting Position

Mounting Torque

Dimensions

92

Series 504

100V t0600V

10mA Tc =150°C


Tc =132°C

RSJC

5000 Amps

1.45V max.

104000A'S

7.5kHz

One cycle of 60HZ sinewave

' F =1500A: Tc =25°C less than 8_33 ms

-65°Cto +200oC

- 65°C to + 190°C



corrosion.




300 inch pounds ± /- 25 inch pounds

In accordance with JEDEC DO-205AB (D09) outline or Top Stud



500

450

400

350

~300 Q; a. !t 250

C ~200 ;:; () u 150 tii ~ 100 u. Q)

~ 50 Q)

~ 0

360°

~/~ -*360°

f----...--... ;:...,. ...; -

\ ',.",' '.~/

Conduction

\ angle -

*180°

*12~0 '" ~ ~ [\ *60° ~ ~

~ ~

'" \ 110120 130140150 160 170 180190

Diode Case Temperature-OC

Series 504


500 360°

450 I/~ l/~ *360° /.:!j\./ 400

350

300

250

!!l ~ 200

J 150 Q)

til .~ 100 (/l

o Q; 50 ;= &. o /

..

Conduction angle

*60° /

/ !J ~

y

IJ !r

', .. ' /

/ I *180° /

*120° / /

/1//

0 / V

i o 50 100 150 200 250 300 350 400 450


93



10,000

4,000

1,000

i: 400 ~ ::; U "0 (ij ~ 100 o u.

'" 5 40 Ol c'" o:IOl eQ; 0:10. tlE E<{ 10

25°C V.....-

/ j

/ II

I

Series 504

I-- 190°C

o 0.5 1.0 1.5 2.0 2.5 3.0 3.5



.21

(ij .18 E ~ 1ii .15 I-$: ~o .12 0:1° u 1.09 oOl -0 § @.06 .- "0 g ~.03 ~§ 0

/ -.----

.001 .01 0.1

Time in Seconds

94

/

/

I

/ I

I

1.0 10


'" ~5400

14800

~4200

8.3600

~3000

~2400 u. ~ 1800 Ol

!l. 1200

~ ~

'---

100 1

Time in Cycles

I I f= 60Hz TJ = 1900 C

------ " '--..,J ---.......

10

-

-

100


Silicon Rectifiers/Fast Recovery 6 AMP Avg; VRRM up to 400 Volts

• 6 Amperes Average, Tc = 100°C • 300 Nanoseconds Recovery Time at 20 Amperes • 200 Nanoseconds Recovery Time at 1.0 Amperes • Blocking Voltage to 400 Volts



A 1 B .427 .437 10.84 11.09 C .505 12.82 D .800 20.32 E .432 .442 10.97 11.22 F .095 .105 2.41 2.66 G .386 9.80 H .163 .189 4.15 4.80 2 J .250 6.35 M .280 7.11 N .050 1.27 P .088 .095 2.23 2.41

Note 1: Standard polarity: Stud Is cathode No. 10·32 UNF·2A Reverse polarity: Stud Is anode Note 2: Full threads within 2% threads

Catalog Number JEDEC

Numbers·

Standard Reverse

S006AADF R006AADF lN3879

S00601DF R00601DF 1 N3880

S00602DF R00602DF lN3881

S00603DF R00603DF lN3882

S00604DF R00604DF 1N3883

·To indicate reverse polarity, add suffix "R" to JEDEC number; Example: 1 N3879R

96

Peak

Reverse

Voltage

50

100

200

300

400

p

Series 006 1 N3879·1 N3883

DO·203AA (00·4)

Silicon Rectifiers, Fast Recovery Series 006




FOlWard Direction Maximum average forward current



Maximum I't

Reverse Recovery Values

Maximum reverse recovery time


Thermal values

Storage temp range



junction to case


Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

VRRM 50V to 400V

'RRM 1.0mA Tc= 100°C

15!,A Tc =25°C

'F(AV) 6.0 Amps Single phase, half·wave rating at

Tc= 100°C

'FSM 75 Amps One half cycle of 60 Hz slnewave

VFM 1.4V max. IFM =19A. Tc =25°C

VFM 1.5V max. IFM =19A, Tc =100oC


trr 200ns IFM = 1.0A, VR = 30V (see figure 7)

trr 300ns IFM = 20A, dildt = 25A1!,s tp0!:2!'s, IRM(REC) = 4.0A (see figure 8)

-65°Cto + 175°C

-65°C to +150 oC

RSJC 3.0 oCIW

Steel stud and base with a 10·32 UNF·2A thread for through






In accordance with JEDEC DO·203AA (D04) outline

97

Silicon Rectifiers, Fast Recovery

Figure 1 Maximum case temperature

7

80 90 100 110 120 130 140 150 160

Maximum Case Temperature· °C

Figure 2 Maximum forward on·state characteristics

/" ..... .....

10 0

0 / /'

1/ /

10 JV

5. 0

1--1500 C

I 25°C 1.0

o. 5

o. 1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

Instantaneous Forward Voltage· Volts

98

Series 006

Figure 3 Maximum power dissipation

10

9 '12(JO ,118J+ Aor J1.

1 '660 _I ~ yc !\or.I1. V /' I

5

V V /~:A:K '1800nl-V~;:/ I I I

V- v::; 1800

3 ~ 1800 H ~ ~ IV VillI 2

~ ;..0'" 1 Conduction ~ ~ ..;~ angle

0


Figure 4 Maximum non repetitive surge current at rated load conditions

90

80

70 "- fl~ 60 L, I

'" TJ = 15QoC 60

" "'-50

40

30 "'-.... .........

0 I"-

1 0 1.0 5.0 10 Number of Cycles

Figure 5 Maximum transient thermal impedance

3.5

3.0

~ 2.5

t~ 2.0 Eu ~ ~ 1.5

~ a 1.0 t- S E c .~ 'fl 0.5

~ ~ 0 0.001

/

v -0.01 0.1

Pulse Duration - Seconds

v-

I

1.0 10

50 100

100


FigureS Reverse recovery time

650

60 01-1'FM1" 2L I 55

50

0l-di/dt" 25A/"S

01-- See Figure 8

45 0

0

0

400

35

30

25

20

01 ......

0 20

V V

t.-V

40 60

V

-V

80

Junction Temperature· °C

Figure 7

~

---,~-t::;LJ-

,/

..-..-~Typical

100 120 140 160

Former JEDEC reverse recovery circuit

115 VAC

Relay (Make before break)

30 voe Constant Voltago

FigureS

W lOW

JEDEC Reverse recovery circuit

1.0A From Constant Voltage Supply

Series 006

Figure 9 Typical recovered charge at TJ = 25·C

5.0

'" l'! u

1.0

~.o 0.1

8~ 0" 0:0

3~ .~ t 1-0 0.0

=-4-"'- ~Qrr-

i-'

~./ ?

,Y--1.0 5.0

Rate of Fall of Current

di/dt - Amperes per /lSecond

..-V

10

Figure 10

-

1.0A

Typical recovered charge at TJ = 100·C

o

'" l'! u

5.0

1.0

] 13 0.1

8~ o " 0:0

~~ g: t: 1- 0 0.01

L-IFM ~t f- n- Q"

~ I::::

1.0 5.0


di/dt - Amperes per },Second

--10

Figure 11

...--:::;

1.0A

Typical recovered charge at TJ = 150·C

_IFM"~

'5A

tOA SA

50 100

IFM = 50A

I....t' -;:::::. 25~

t A

5A

50 100

5.0 IFM =50A~

1.0

f u

]13 0.1

8] . " 0: 0

]~ .~ ~ 1-00.01

- .I-+-

~ :::::- ~ - lOA

5A

/' ;..- 1.0A

~ -- I ~dl/dtl Fn-~Q"

III 1.0 5.0


dl/dt - Amperes per JJSecond

10

I I 50 100

99


Figure 12 l}Iplcal Junction capacitance

U. 0.

200

100

50

40

30

20

0.1 0.5 1.0 Reverse Voltage - Volts

Reverse current

Figure 13 Effects of temperature

10,000

r-- VRRM'l00V 1000

~ E 100 1

10

1,0 20 40 60 Junction Temperature - °C

Figure 14 Effects of reverse voltage

10,00 a -100 a

~

~ 10

....-a

1 c

~ a -U

~ ~

0:: 1. a -100 200

Reverse Voltage - Volts

100

./

80

300

r-....

5.0 10

,/

./

100 120

TJ

400 500

Series 006

50 100

V

140 150

15()OL

1250C

l000 C

750C

5()OC

25°C

600


III 12 Amperes Average, T G = 100°C II 200 Nanoseconds Recovery Time at 1.0 Amperes II Blocking Voltage to 400 Volts



A B .427 .437 10.84 11.09 C .505 12.82 D .800 20.32 E .432 .442 10.97 11.22 F .095 .105 2.41 2.66 G .386 9.80 H .163 .189 4.15 4.80 2 J .250 6.35 M .280 7.11 N .050 1.27 P .088 .095 2.23 2.41

Note 1: Standard polarity: Stud is cathode No. 10·32 UNF·2A Reverse polarity: Stud is anode Note 2: Full threads within 2% threads

Catalog Number JEDEC

Polarity Numbers'

Standard Reverse

S012AADF R012AADF 1N3889

S01201DF R01201DF 1N3890

S01202DF R01202DF 1 N3891

S01203DF R01203DF 1N3892

S01204DF R01204DF 1N3893

'To indicate reverse polarity, add suffix "R" to JEDEC number; Example: 1N3879R

Peak

Reverse

Voltage

50

100

200

300

400

p

Series 012 1 N3889·1N3893

00·203AA (00·4)

101



Reverse Blocking



Forward Direction




Maximum I't




Thermal values

Storage temp range




Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

102

VRRM 50Vto 400V


25p.A Tc =25°C

IF(AV) 12Amps Single phase, half-wave rating at

Tc= 100°C

IFSM 150 Amps One half cycle of 60 Hz sinewave

VFM 1.4V max. IFM =38A, Tc =25°C

VFM 1.5V max. IFM = 38A, Tc= 100°C

I't 93 A'S less than 8.33 ms

trr 200 ns IFM = 1.0A, VR = 30V (see figure 7)

trr 300ns IFM = 40A, di/dt = 25A/p.s tp ~4 P.s, IRM(REC) = 5.0A (see figure 8)

-65°C to + 175°C

-65°Cto + 150°C

3.0 oCfW

Steel stud and base with a 10·32 UNF-2A thread for through






In accordance with JEDEC DO-203AA (D04) outline



14

8. E « c

~ u "E

j . e

12

10

Conduction f--+---f-----1f-""""~A+-angle

~ OL-__ ~_~_~L__~_~-~~~~-~ 80 90 100 110 120 130 140 150 160

Maximum Case Temperature _ DC


100

50

If

10 II 5.0 , I

I I

!l 1i E « 1.0

1500 CI 25°C

c

§ u 0.5 "E

I , ~ E ~ 0.1

0.4 0.8 1.2

/. /.

1.6 2.0

Instantaneous Forward Voltage. Volts

----f-""""

/' V e--

2.4 2.8

-

3.2

Series 012


18

16

14

12

10

o o ~ ~

/ / ~

~ ~ ;/"'" ~ ?P

"12()O )' I '660

l\orJL ~ D~~

/\or .Jl ~ V-r V ./ V V ·18Don

/~ /1""1800("\ I ~ V J I 1800

1800 H-Vi! I-

Conduction ~ 1-=-1-anrle I I I

10 12 14

Average Forward Current· Amperes

Figure 4 Maximum nonrepetltlve surge current at rated load conditions

c

~ u

1 u.

~

150 140

130

120

110

100

90

0

0

60

0

4 0

l"-

1.0

'\. '\

'\. "'\.

2.0

Number of Cycles

FigureS

" 5.0

i = 60 tH) TJ=1500 C

""'"" ........

10 20

Maximum transient thermal Impedance 3.5

3.0

2.5 8 i 2.0

E~ - 0 15 § ~ . ~ u 1.0 .... s :; c .~ ~ 0.5

~ ~ a

/

/ -I-

0.001 0.01 0.1


/v

V

1.0 10

i"-50 100

100

103


Figure 6 Reverse recovery time

65

60

0

IF~ .~o) or-~ 55

~ 50

01- dl/dt = 25A1"S Se~ FI!~ure 8 ...... V

0 .,/

~ 45

i= 40

i 35 ~ 30 a:

0 V V a

.....- ".-a ".-

a V V ~ 25 ~

a V a: 20 a

20 40 60 80 lOa 120

Junction Temperature· Oc

Figure 7 Former JEDEC reverse recovery circuit

Figure 8 JEDEC Reverse recovery circuit

..--1 4.JmuJ-II ....r--

TYPlcal,_ -

140 160


r-"N·--,r---....... .j...~---,Unlt

104

Under Test

Series 012


5.0

1.0

r-IFM ~d1/dt r--_IFM"~ r-n-~Q,,-

25A

j 'OA

5A u

~ ~ 0.1 > E 8.2 · , a: 0

:§~ ~ l::: I- 00.01

::;..-- ;...---

~ 1.0 2,0 5,0 Rate of Fall of Current

di/dt - Amperes per /JSecond

-I--1.0A

10 20 50

Figure 10 Typical recovered charge at T J = 100·C

5.0

1.0

· E:' j!1 u

i.B 0.1

8~ · , a:o

:§~ ~ l:: I- 0 0,01

r-r M- ~dr/dt_ _IFM=~

:Fn-~Q" ~~~ 'OA

5A -f.::::: f..-- - 1.0A

1.0 2.0 5.0 10 20 50 Rate of Fall of Current di!dt· Ampere!. per ,uSecond


~ j!1 U

5.0

1.0

/".-

~ ,.-

~ :::--

1.0A

'-

IFM" 50A

...- -!-

-~ ,OA

5A

I ~.B 0.1

8~ . , a: 0

~~ ~ ~ ~ t: f- 0 0.01 ill II

1.0 2.0 5.0 ,0 20 50 Rate of Fall of Current di/ct - Amperes per ,u$econd

lOa

lOa

100


Figure 12 Typical junction capacitance

200

100

50

40

30

20 0.1 0.5 1.0 Reverse Voltage. Volts

Typical Reverse current


10,000

I-- I-- VRRM = 100V

1000

100

10

i ./ a: 1.0

20 40 60 Junction Temperature· DC


10,00 0

.-100 0

~ I---E 10 0 1 c . ~ 0 ,..-u ~

~ a: 1. o -

100 200 Reverse Voltage· Volts

L

80

300

-....

5.0 10

/'

/'

100 120

TJ

400 500

Series 012

I

50 100

V

140 150

1500C

125°C

1000C

75°C

50a C

25°C

600

105


• 15 Amperes Average, Tc = 100°C • 225 Nanoseconds Recovery Time at 50 Amperes • 100 Nanoseconds Recovery Time at 1.0 Amperes • Blocking Voltage to 300 Volts



A B .427 .437 10.84 C .505 D .800 E .432 .442 10.97 F .095 .105 2.41 G .386 H .163 .189 4.15 J .250 M .280 N .050 P .088 .095 2.23

Note 1: Standard polarity: No. 10-32 UNF-2A Reverse polarity: Note 2: Full threads within 2'12 threads

Catalog Number

Standard

S016AADF

S01601 DF

S01602DF

S01603DF

106

Reverse

R016AADF

R01601 DF

R01602DF

R01603DF

Maximum Notes

11.09 12.82 20.32 11.22 2.66 9.80 4.80 2 6.35 7.11 1.27 2.41

Stud Is cathode Stud is anode

Peak

Reverse

Voltage

50

100

200

300

A-../

Series 016

1Jt I t- ~-~-I

DO-203AA (00-4)

E I

.~



Reverse Blocking



Forward Direction




Maximum I't




Thermal values

Storage temp range




Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

VRRM 50V to 300V

IRRM 5.0mA Tc =150°C

15!,A Tc =25°C

IFIAV) 15Amps Single phase, half·wave rating at

Tc =100oC





trr 225 ns IFM = 50A, diJdt = 25A1!,s tp ~6.3!,s, IRM(REC) = 6.0A (see figure 8)

- 65°C to + 175°C

- 65°C to + 150°C

3.2°CIW







In accordance with JEDEC DO·203AA (D04) outline

107

Silicon Rectifiers/Fast Recovery


2S

24 I lS0~ lSO"

F= rOC M i'-.. ~I

"- I,.:.j 1.:.1 - lS00 ;~gl~uctlon_ lSO"f\ -20

16

~ I ~ = 1200 (\or11. 12

90oi\or .rt. ~~ - 60oAorIl - 300rorll.

o 50 70 90 110 Maximum Case Temperature· DC


1000

108

SOD

600

400

200

100

SO

60

40

20

1/ .5

1500;cj

/ / / I

/ .7 .9

!/ / / /

/250 C;

1.1 1.3 Instantaneous Forward Voltage· Volts

~ ~ ""'II

" 130 150

~ t::: / ~

~

1.5 1.7 1.9

Series 016


25

!! 20 ~ 0 .2 15 K .~

is

~ 10

~ E ~ x :!1



300 F =1 60H!

250

I"" TJ = 1500 C

l"-

100 i'--., ......... 1'-_

50

o 1.0 2.0 5.0 10 20 Number of Cycles

Figure 5 Maximum transient thermal Impedance

10

6.0

4. 0

g 2.0

h E u 1. 0

i ~ 0.6

~ ~ 0.4

~ g 0.2 .~ g ~ -=l o. 1

,.. ....... V

~

.001 .01 0.1 1.0 Pulse Duration - Seconds

50

10

25

100

100



550

500

~ 450

~ 400

E 350 ;:: 300 ~

~ ~ a: ~ ~ a:

250

200

,50

IFM = 50,,\ -di/dt = 25A/ps

See Figure B

V /

.,/

-~ -

~ ./ Maximum

./

--- -- rypical

Series 016

Figure 9 Typical recovered charge at T J = 25°C

1.

o.

O .

~ cJ o.

¥ • ~ t 0.0

~~ ~~ ~o:::o.o

0 I .i/.,

5~'Fn- y-v=a" 2

0 , 5

./ I.OA

h ~~

,A ~

IFM- 50A

25A L

./ / 'OA

~ / 5.0A

,00 20 40 60 80 Junction Temperature - ac

,00 ,20 ,40 ,60 1.0 2.0 5.0 10 20 50 Rate of Fall of Current dJ/dt '" Amperes per "Second

,00


Figure 8

Unit Under

T."

10 'OW

Scope


1.0A From Constant Voltage SupplV

r-IW"'T--,r---....... .j;..,.----, Unit Under Test

Figure 10 Typical recovered charge at TJ = 100°C

,.0

'<i' IFM 50A# IF(\ 0.5 a" 25A-t-t-

~ 0.2

B 0.1

~ . ~ ~ 0.05 8..9 m , a: 0

~ ~ 0.02

~ ::: f- a 0.01

::.

=--

~

~

OA // .......,..

/./ /. 5.0A

~ 1.0A

I:V

1.0 2.0 5.0 ,0 20 50 ,00 Rate of Fall of Current dl/dt '" Amperes per "Second

Figure 11 1\tpical recovered charge at T J = 150°C

:::ft:~/l=\~~ vll:FM:~~~~.:I/.~,~~~I~F~M~-~5~0~A~;;!Z;~~ro~~:nA~ ~ ./// 5.0A

0.21--+--t--t-t+7'Elf1:k::"':/:::::$""/+-+-+-H+f+l 1! P,:;;'A

6 0"~~1~1--::11~~~!11 L ~.c 0.05

g~ .,y~ 0:5 ~ ~ ~ 0.02 ~ t: f- a 0.01 ':-'-:.0,-...,2:'-.0:-..J....~5:1."'0L..L"-':'1:0---=2"'0-'-'-:'50:-'-J....L-f:!'00

Rate of Fall of Current dl/dt = Amperes per ",Second

109



200

100

80 60

50

40

30

20

TJJ

........

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 Reverse Voltage - Volts



10000

1000

L 1

20 40 60 80 Junction Temperature - DC


10000

1000 I-

100 -I-"

10

1

V

VA AM = 300V-I-

100 120 140 160

TJ - 150DC

125bC

10QoC

750 C-=

5QOC

250p-o 50 100 150 200 250 300 350 Reverse Voltage - Volts

110

Series 016


• 20 Amperes Average, Tc= 100°C • 200 Nanoseconds Recovery Time at 1.0 Amperes • Blocking Voltage to 400 Volts



A B .677 .687 17.19 17.44 C .793 20.14 D 1.000 25.40 E .427 .447 10.84 11.35 F .125 .142 3.17 3.60 G .450 11.43 H .220 .249 5.59 6.32 2 J .375 9.52 K .156 3.97 M .590 14.98 Dla. N .080 2.03 P .140 .175 3.55 4.44 Dla

Note 1: Standard polarity: Stud is cathode %·28 UNF·2A Reverse polarity: Stud is anode Note2: Full threads within 2% threads

JEDEC Peak

Numbers' Reverse

Voltage

1N3899 50

1N3900 100

1N3901 200

1N3902 300

lN3903 400

'To indicate reverse polarity, add suffix "R" to JEDEC number; Example: 1 N3899R

M

P

A

1 N3899·1 N3903

DO·203AB (00·5)

111

Silicon Rectifiers, Fast Recovery 1 N3899·1 N3903


Reverse Blocking



Forward Direction




Maximum I't




Thermal values

Storage temp range




Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

112

VRRM 50Vto 600V


5OI!A Tc =25°C

IF(AV) 20 Amps Single phase, half·wave DC rating at Tc =100oC



I't 260 A'S greater than 5.0 ms


trr 350ns IFM = 65A, dildt = 25A/I!s tp~6.5I!s, IRM(REC) = 9.0A (see figure 8)

-65°Cto +175°C

-65°Cto +150 oC







In accordance with JEDEC DO·203AB (00·5) outline



24

i 20

E '" 16

1-.160~SL,"", ~Db 160" _ laOO-

~-t-·16~OA

"'" " " ViJ 1=·1200 _ ~

, --h ~ ~-rf\orll..

" ~ '\. I--- ·6bO "'" ~,

Conductlon-c

~ 12 u "E

~ u. m

I

i=AorSL ......... ~

" angle

'\. ~'\. .~ ~ ~ ~

'" o 80 90 100 110 120 130 140 150 160

Maximum Case Temperature" oc


500

I---,./' V -

100 / ;:-/

50

II '/

10

1500C

5.0

250C

1.0

0.5

0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

I nstantaneous Forward Voltage ~ Volts

1N3899·1N3903


30

~ 25

c 20 0

I 15

" ~ 10 /1. E E ·x !1 0

0 12 16 20 24


Figure 4 Maximum nonrepetitive surge current at rated load conditions

240

220

o 200 " JOHl ~ ~

180 '\.

TJ'1500 C

E § u

1 u.

l

160

140

120

100

80

60 1.0

"

2.0 Number of Cycles

Figure 5

r...... ...... -

5.0 10 20

Maximum transient thermal impedance

~

0 2.

1.8

1.6

1.4

h 1.2 E u 1.0 -0 g ~ 0.8

~ U 0.6 f-S E c:: 0.4

f-1 -! °e 0.2 ~~ o

0.001

./

0.Q1 0.1 Pulse Duration - Seconds

./

/

1.0

50 100

10 100

113



900

80 ~,I I I o IF = 65A diMt ;:: 25A/IlS

V o Sel:l F fgure 8 --70

V-0 V 60

0 V-f-'

V V --,....... 0

50

40 ./

I--I--..-

0 30

..-~ r-d.-20 20 40 60 80 100 120 Junction Temperature _ 0C


Figure 8 JEDEC Reverse recovery circuit

~ ~axjmum

..- Typical

140 160

1.0A From Constant Voltage SupplV

r-MI'--r----<i---"'"'{....----, Unit

114

Under Telt

1 N3899·1 N3903

. E? J" u

~E > E 0.1 ~==1=:t~~~:f1~==$=~=1~:$U~ 8 .Q ~ ~6 ~

]~ ~ ~t: ~ I- 0 0.01 ~Ar=-+;__'--'__;:';:_'_J....W':7-~;__-'-_'_;:~..J....L:':.

1.0 2.0 5.0 10 20 50 100 Rate of Fall of Current di/dt - Amperes per J.lSecond

Figure 10 Typical recovered charge at TJ = 100'C

10 v-I-- IFM-1~

4= Q"

1.0

j u

!IE ~ E 0.1 8.2 . " a: 0

]~ g; t: I- a 0.01

~~

I"""

1.0 2.0 5.0 Rate of Fall of Current di/dt - Amperes per pSecond

Figure 11

./ :::/ - IDA

10 20 50

Typical recovered charge at TJ = 150'C 10

IFM-r~

1.0

t:::::ls'-~ ~A

....-:: ~ M P'

tct!

100

a-¥ Q"

III I I I I 1 1.0 2.0 5.0 10 20 50 100 Rate of Fall of Current di/dt - Amperes per pSecond



500 400

300 t--

t.a, 200

~ ·1 100 u c a

] 50

I---.

0.1 0.5 1.0 Reverse Voltage. Volts



10.000

I-1000

~ ~ 100

10

./ 1.0

20

VAAM'100V

:/ ./

40 60 Junction Temperature - °C


10.000

1000

~ 1 100

10

1.0 o

--

---1 -

100 200 Reverse Voltage - Volts

........

80

300

'-..,

" 5.0 10 50 100

./'

100 120 140 150

TJ'15()oC

12~OC

l000 C

75QC

50aC

~50C

400 500 600

1 N3899·1 N3903

115


• 30 Amperes Average, Tc = 100°C • 200 Nanoseconds Recovery Time at 1.0 Amperes • Blocking Voltage to 400 Volts




Note 1: Standard polarity: Stud is cathode

M

p

V.-28 UNF·2A Reverse polarity: Stud is anode A Note2: Full threads within 2% threads

Catalog Number

JEDEC Peak

Numbers' Reverse

Voltage

1N3909 50

lN3910 100

lN3911 200

1N3912 300

lN3913 400

"To indicate reverse polarity, add suffix "R" to JEDEC number; Example: 1 N3909R

116

1N3909·1N3913

DO·203AB (00·5)

Silicon Rectifiers, Fast Recovery 1 N3909·1 N3913


Reverse Blocking



Forward Direction




Maximum I't




Thermal values

Storage temp range




Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

VRRM 50V to 400V

'RRM 10mA Tc= 150°C

80!,A Tc =25°C

IF(AV) 30 Amps Single phase, half·wave rating Tc =100°C


VFM 1.4V max. ' FM =93A, Tc =25°C 1.5Vmax. 'FM = 93A, Tc= 100°C


trr 200 ns 'FM = 1.0A, VR = 30V (see figure 7)

trr 350 ns 'FM = 100A, di/dt = 25A1!,s tp<!: 10l'S, IRM(REC) = 9.0A (see figure 8)

- 65°C to + 175°C

- 65°C to + 150°C

RSJC

Steel stud and base with a 1/4·28 UNF·2A thread for through






In accordance with JEDEC DO·203AB (005) outline

117



36

32

Q 28 E '" 24

~ 20

u 16

12

t:::"'8doJl. F I f-"1800f\-

~:'200 _ Ff\O(Jl.

*600

F=== "or Jl.

'DC

~ "-'" ~"'-~~ ~

"& ................ ~

1800

1800 H-Ri JI-~ ~-;~g~uction _

~ ~ ~

" o 80 90 100 110 120 130 140 150 160

Maximum Case Temperature - DC


500

--./ /"

/~ /' 100

50

.1 1500C R

0_ 25°C

5. 0

J

1. 0

o. 5

O. 1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

Instantaneous Forward Voltage - Volts

118

1 N3909·1 N3913


45

40 "11200

i 35 "~OO l"\orJl. // DL

§ 30

~ 25 .~

15 20

1\0r11

J / /b

///.. ./ ~ ../ + 1800 11

7,/ '"1800"

I 1800 j 15 /~ ~

VA ~ 1800 11-~I-10

o o .,;P I~ ~

12

Conduction ~ angle I' 1

16 20 24 28



i E

'"

300

275

250

225

200

175

150

125

100

1"'-

75 1.0

"'-"-

"-

Number of Cycles

Figure 5

fl. 60 ~z I TJ'" 150DC

~ ...... -5.0 10

Maximum transient thermal impedance 1.4

1.2

g 1.0

h o .8 Eu -0 ro ' 0.6 E ~ ~ S 0.4

10 c ~ ~ 0.2 ~ § .. ~ 0

0.001 0.01 0.1


v V

/

1.0 10

~-32 36

50 100

100



E ;:: >-

~ a: . ~ a:

900

800

700

600

500

400

300

200

f-

/

-

I~M!106A I I- di/dt = 25A/"S

See Figure 8

V/

V ,./

I-----V

I-----

~ ~I V Maximum

../ V

I--- .....--Typical

1N3909·1N3913


10

1.0

j u

~E ~ E 0.1 8 52 • 0 a: 0

~~ ~ :: I- 00.01

=D; ~"-I-- IIM=~

Vf:lli ,./ 'OA

~ f--

~

~ ~

20 40 60 80 100 120 140 160 1.0 5.0 10 50 100 Junction Temperature - DC


Figure 8

Unit Under Test

In 'ow

Scope



Rate of Fall of Current di!dt - Amperes per /JSecond


10 f--IFM y'dl/dt - I-- I~M-'2~

~4~Q" V ....... ~W

1.0

~

j u

~.E 0.1

8§ ~ 0 a: 0

~~ .~ ~ I- a 0,0 1

'OA

V

./.i:=': ~ ~

1.0 5.0 10 Rate of Fall of Current di/dt - Amperes per j.t$econd


10

1.0 . ~ u

"lI " ~ "E 0.l

§~ a: 0

~~ g: t I- 00.01

IFM 125A

.J.-'"

.......-: ~ ~ -'OA

...-:: 8:: ~ ':?

D;~" III I I I I II III

1.0 5.0 Rate of Fall of Current di/dt - Amperes per J,Second

10 II

50

0

100

119


Figure 12 lYplcal Junction capacitance

500

400

300 r--

u. 200 0.

r-.....

0,5 1,0 Reverse Voltage. Volts

Typical Reverse current Figure 13 Effects of temperature

10,000

_VRRM·looV 1000

I i 100

/ V I 10

u

! / a: 1,0

20 40 60

./

80 Junction Temperature - oc


10,000

1000 .-f--

l E 100 '1

~ -r-u

_r-II! ~ a:

o 100 200 Reverse Voltage - Volts

120

~,

5,0 10 50 100

V

100 120 140 150

TJ - 1500C

125°C

l000 C

750C

5tC ~50C

300 400 500 600

1N3909·1N3913


• 45 Amperes Average, Tc = 100°C • 200 Nanoseconds Recovery Time at 1.0 Amperes • 1.15 Volts Forward Voltage at 90 Amperes • 400 Volts Peak Reverse Voltage Maximum • Offers lower Forward Characteristics

than the lN3909-1N3913 Family




Note 1: Standard polarity: Stud Is cathode ~·28UNF·2A Reverse polarity: Stud Is anode Note2: Full threads within 2'12 threads

Catalog Number

Peak Standard Reverse Reverse Polarity Polarity Voltage

S045AADF R045AADF 50

S04501DF R04501DF 100

S04502DF R04502DF 200

S04503DF R04503DF 300

S04504DF R04504DF 400

Series 045

M

C

P

DO·203AB (00·5)

121








Maxlmum/'t

Reverse Recovery Values Maximum reverse recovery time


Thennal values Storage temp range

Operating Junction temp range


junction to case


Header

Weight

Mounting Position

Mounting Torque

Dimensions

122

VRRM 5OVto400V

'RRM 20mA Tc =150oC

BOlLA Tc =25°C

IF(AY) 45 Amps Single phase, half-wave rating Tc =100°C

IFSM 600 Amps One cycle of 60 Hz slnewave

VFM 1.15Vmax. 'FM= 90A, Tc = 25°C ,..t 1500 A'S less than B.33 ms

trr 200ns IFM =1.0A, VR=30V (see figure 7)

trr 350ns 'FM = 125A, di/dt = 25A/ILs tp~16ILs, IRM(REC)= <9.0A (see figure B)

-65°Cto + 175°C

-65°Cto + 150°C

ReJc

Steel stud and base with a 1/4-2B UNF-2A thread for through






In accordance with JEDEC DO-203AB (005) outline


Characteristic Curves


70

"'" 1800 1800

1800.[[ I'-.. fi fi-W I..-!-J--

60

50 1800/\

~ r-- r-'200 r'vJr Jl "'" cond~ctlon'_ ~~gIC

40

00 f'VJr SL 600 (\or n :::::-:::

~~ 300 1\0r Jl

I .:::::: ~ 0 ~

30

20

10

50 60 70 80 90 100 110 120 130 140 150

Maxjmum Case Temperature· DC


0 100 80 0

60 0

40 0

20 0

10 0

0

0

0 /

V 0

1500 /

0 1

8

I I

1 0.6

/

I I

0.8

/1:/' / V

V / /

I II

/lit

I 250 C

1.0 1.2 1.4

Instantaneous Forward Voltage. Volts

,p

~

1.6 1.B 2.0

Series 045


70

E 60

~ 50

0 0

~ 40 .. Ci 30

l 20 E

E x f--r.SIiI!~+--+--\---' Conduction

:! angle

10 20 30 40 50 60



700

600

~

~ 500

1""'- f = 60 Hz

""- T J =150o C

" 400 0

~ 300 u "E

200 ~ --J'

100 ~

J'

70 80

1.0 2.0 4.0 6.0 10 20 40 60 100

Number of Cycles


1.0

~

0.6

0.4

16 0.2

h foU 0.1

~ ~ 0.06 -u ~ E 0.04

~.§ i ~ 0.02

1 ~-, 0,0 0.001

,./

0.Q1

Pulse DuratIon - Seconds

0.1 1.0 10 100

123



900

800 t--I~M!dA I ...--1 r- dl/d' - 25A/¢;

~imulm See FigureS ,,-700

y ,,-VV

V ,,-

I--I-- rv;"ca,

600

500

400 I .......

300 .....-I--I--

1- ...-f-" 200

Series 045

Figure 9 Typical recovered charge at T J = 25·C

'a C:===l==~~1=~~i:====~=l~=l~ffH 6.0 ~ 4.0 ~ j\'FM

2.0 r-~ ,.0

i!, 0.6 l! 0.4 u

./ tOA

V .......... --a! 0.2

~ ~ 0.1 l::==l=i~~tst!:!===!==t=l=tittM ~ -50.06 r: ': 8 0.04 1---+....,,~t%>9HH-+l-++--+--I-+-+-1I-+Hl .~ ~ 0.02 1-~&J:~:z..++++-+-H+-1--+--+-+-++l+11 >" ~

20 40 60 80 100 120 ,40 '60 ... 0 0.0' '!-.0,!'i":::....,2:1.0,-...J....-,4L.0,..L6",.0,u.J''''0,---:2''0-.L.4.J,0,..-L'''6'=OLL,J,!00

Junction Temperature· DC


115VAC

Relay (Make before break)

30VDC Conltant Voltage

FigureS

Unit Under Toot

111 10W

Scope


1.0A From Conltant Voltage Supply

r"'N'--,---,---",",.w~----, Unit dVdt Adjust Under

124

Rate of Fall of Current di/dt - Amperes per #lSecond


,0 6.0 4.0

_I <dl/dt -

=4-~Q" -

2.0

,.0 ~ 0.6 ~ 0.4

~ 0.2 :s E 0.1

§ ~ 0.06

~~

L7:/ a: 0 0.04

2~ ~ 'i 0.0

~J= 0,0 , '.0 2.0 4.0 6.0 Rate of Fall of Current di/dt . Amperes per J.LSecond

Figure 11

~

V

10 20

Typical recovered charge at T J = 150·C

IFM = 125A

;t~ 10A

40 60

10 6.0 4.0

II:M = 125A

'.0

.....-:: ~ ~ -10A

QJ 0.6 .r::. 0.4

~ 0.2

~ ~O.l g ~ 0.06 a: 00,04 "<OtS. '6. .... 0.02

~ 0 0.01

~ :2;: ~ '?'

D;~" III I I I I II

III I I II

a

'.0 2.0 4.0 6.0 10 20 40 60 ,00 Rate of Fall of Current di/dt . Amperes per tJ$econd



10,00 0

6,00

4,00

LL 2,00

"

0

0

~ 1,000

0

- - TJ'::I250 C

60 'i 40 a

0 I"-o a 20 0

1 100 0,1 0,2 0.4 0,6 1,0 2,0 4,0 6,0 10 20


Figure 13 Typical Reverse current

Effects of temperature 10,000

~ 1i

1000

E 100 '[

10

~ a: 1.0

_VRRM'100V

,,/ ,/

/'

20 40 60

./

ao Junction Temperature· DC

Figure 14 Effects of voltage

10,000

100 0 .-'-

i E 10 0 '[

0 ----100 200


100 120

300 400

40 60 100

V

140 150

TJ - 1500 C

125°C

l00aC

75°C

5100 C

~50C

500 600

Series 045

125

Silicon Rectifiers/Fast Recovery 55 Amp Avg; VRRM Up To 300 Volts

.55 Amperes Average, Tc = 100°C

.225 Nanoseconds Recovery Time at 175 Amperes • 100 Nanoseconds Recovery Time at 1.0 Amperes • Blocking Voltage to 300 Volts



A B .677 .687 17.19 17.44 C .793 . 20.14 D 1.000 25.40 E .427 .447 10.84 11.35 F .125 .142 3.17 3.60 G .450 11.43 H .220 .249 5.59 6.32 2 J .375 9.52 K .156 3.97 M .590 14.98 Dla. N .080 2.03 P .140 .175 3.56 4.44 Dla

Note 1: Standard polarity: Stud Is cathode '1.·28 UNF·2A Reverse polarity: Stud Is anode Note 2: Full threads within 2'1. threads

Catalog Number Peak

Reverse

Voltage

Standard Reverse

S055AADF R055AADF 50

S0550lDF R0550lDF 100

S05502DF R05502DF 200

S05503DF R05503DF 300

126

M

P

A

DO·203AB (00·5)

Series 055



Reverse Blocking Repetitive peak reverse voltage Maximum peak reverse current

Forward Direction




Maximum I't




Thermal values

Storage temp range



junction to case


Base

Header

Weight

Mounting Position

Mounting Torque

Dimensions

VRRM 50Vto 300V

IRRM 10mA Tc =150°C

80!,A Tc =25°C

IF(AV) 55 Amps Single phase, half·wave DC rating Tc =100°C




Irr 100 ns IFM = 1.0A, VR=30V (see figure 7)

Irr 225 ns IFM = 175A, di/dt = 25A/!,s tp<!:22!'s, IRM(REC) = <4.0A (see figure 8)

- 65°C to + 175°C

- 65°C to + 150°C

RSJC 0.8°CIW

Copper stud and base with a 114·28 UNF·2A thread for through






In accordance with JEDEC DO·203AB (D05) outline

127



90 OHDC f-- "- 1800 1800

t"-1

~ 0 "- 1 ·lacon '" 60

50

40

30

20

10

o

r-- • 180?/\ ~

1== -*1200

- (\or It *900 ........ ~ f\orA S:::; *600

(\orn ',no (\or 11.

50 70 90 110

Maximum Case Temperature· DC


1000 800

600

400

200

100

80

60

40

20

10

8.0

6.0

4.0

2.0

1.0

-150011 I

I

I I

/"/ / I

/ / II

I - f250C

I

Id'"

I-!.J I.!.J Conduction angle -

~ ~

~ -....;

130 150

-'

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage. Volts

128

Series 055

10 20 30 40 50 60 70 Average Forward Current - Amperes

Figure 4 Maximum non repetitive surge current at rsted load conditions

1400

1200

11000

~ 800

i 600 u

1 400

& 200

~ o

~ ......... ......

1.0 2.0

Number of Cvcles

Figure 5

5.0

F '" 60 Hz TJ"1500C

--10 20

Maximum transient thermal Impedance 1.0 0.9

0.8

~ 0.7

; 0.6

h o.5 -0

~ ~0.4 ~ aO.3 1-13 E c 0.2 ~.2. ~ t) 0.1

~ ~ 0

./

- -0.001 0.01 0.1 1.0 Pulse Duration· Second,s

10

80 90

50 100

100


FigureS Reverse recovery time

550

500

-g 450

~ 400

350

E ;:: 300

j ::: ~ 150

c: 100

r-- IFM'. 175A I

f-- dl/dt· 25A/", See Figure B

./" ~

/'

-f...--20 40 60 80 Junction Temperature· °C

Figure 7

./" ./"

V-

100 120

Former JEDEC reverse recovery circuit

115 VAC

RollIY (M.,ko before broak)

30 VDe Constant Voltage

FigureS

10 lOW

J EDEC Reverse recovery circuit

~

V" Typical

140 160


Series 055


1.0 0.8

.~LS; ~ IFM ·175 A~

0.4 0"

1~~~ f- /:,. 0.2

~ % ~ lOA o

~ 0, 1 8 u 0.0

~E ~ ~ 0.04 0: 6 ~~o.o 2~

1 a , ~o ... o.o

M ~

1.0 2.0

5.0A

~ 1.0A

.... ...I ..... 5.0 10 20 50

Rate of Fall of Current di/dt - Amperes per jJSecond

Figure 10 "TYpical recovered charge at TJ = 100°C

1.0 0.8 IFM·175A=

0.4

w 0,2

j u 0.1 11 " 0.08 OD

§.§ 0.04

0:6 ~~O.02 .~ l: 1-00.01

LS;

~

~ ~/

~.// 1.0 2.0

~ 50'::T

0" //' lOA // ::;-: /'

~ 5.0A

lOA

5.0 10 20 50 Rate of Fall of Current dUdt .:, Amperes per p.Second


1.0 0.8 FM - 175~u~"", 50~&f.

0.4

1.0 2.0 5.0 10 20 50 Rate of Fall of Current di/dt - Amperes per ",Second

100

100

100

129



500 400

300

u. 200 0.

g II

"I 100 u c o

J 50

-r---- .......

Ull

11+~~250~

~ i',

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 Reverse Voltage· Volts



10000

1000

,/ I E 100 '1

10

1.0 20 40 60 80 Junction Temperature - oc


10000

1000

I 1. 100

10

1.0 o

--

--

'-r-

-50 100 Reverse Voltage - Volts

130

150

V

VRRM ~300V

100 120 140 160

TJ"" 1500 C -125CC

lOOOC- -

500C--

25ic- -200 250 300 350

Series 055


Schottky Rectifier 30 A Avg; VRRM up to 45 Volts

• Guard ring reverse protection

• 45 Volts VRRMIVRWM

• 30Amperes • 160° (TJ)



A B .427 ".437 10.84 11.09 C .505 12.82 D .800 20.32 E .432 .442 10.97 11.22 F 0.95 .105 2.41 2.66 G .349 .386 8.86 9.80 H .163 .189 4.14 4.80 2 J .250 6.35 M .280 7.11 N 0.50 1.27 P .088 .098 2.23 2.48

Note 1: No. 10·32 UNF·2A Standard Polarity: Stud is cathode Note 2: Full thread within 2'12 threads

132

Catalog Number

SD41 SD4145

JEDEC Numbers

Working Peak Reverse Voltage VRWM

35@ 125°C TJ

45@ 125°C TJ

M

Series SO 41

DO·203AA (00·4)


Electrical characteristics





Typical junction capacitance

Thermal Characteristics

Storage temp range



Typical thermal resistance


Base

Header

Weight

Mounting torque

Dimensions

Series SO 41

30Amps Sine wave at Tc =90oC

33 Amps Square wave at Tc= B7°C

600Amps B.3 ms, half sine, TJ = 160°C

0.55 volts

125mA

1500pF

-55°C to +165°C

- 55°C to + 160°C

2.0°Crw 0.3°Crw

Junction to case Case to sink

Copper stud base with a #10-32 UNF-2A; thread for through

mounting on a heat sink. Nickel plating of base produces low

contact resistance and prevents corrosion.



151nch pounds maximum

In accordance with JEDEC DO·203AA (DO-4) outline

'Pulse test: Pulse width 300 I'sec, Duty cycle 2%

133



1000 500

600

400

200

100

SO

60

40

~ 20

~ « c 10 ~ 5.0

86.0 E ~

~ 4.0 o u. ~ o o ~ 2.0

~ ~ I

..... r:::: ~

/ 12S'C 2S'C

II 1/

I /

I I

6:::: F==='

~

Series SD 41

Figure 2 Max. non repetitive surge current at rated load conditions

600

~

~ 480

E « g 360

o () 240 E

~ o 120 u.

" :ll c. 0

"-"-

r--... i'..

1.0 2.0 4.0 6.0 10

Number of Cycles

Figure 3 Typical junction capacitance 10000

u.

6000

4000

':' 2000

1l ~ 1000

.~ 600 Co

~ 400 c: 'E 200 c:

-=! 100

r-...... TJ " 25'C

TJ=160'C

............. i--.

20 40 60 100

E 1.0 0.2 0.4 0.6 0.5 1.0 1.2 1.4 1.6 0.1 0.5 1.0 5.0 10 50 100

I nstantaneous Forward Voltage - Volts


100 1S0'C

TJ ,= ~ ~12S'C=f=

c ru ~1_0 ()

ru ~

-~ 1 I ;' a:

1

~ .~

t-- .0 0%

.....

20%

Percent· VRWM

134

-+- L-7SoC 2S'C

i.-'" ---

40% 60% 80% 100%


FigureS Maximum forward power dissipation

150' 150' _.-I--~ I--J

I-K JI- TJ = 150°C

I- ~ 1-'-1 , 1S0'Jl.. .9C I--CondUCtiO~-t- ~~p no/, I--angl. 600 ,~ 150"

30,1 "or Jl.. .;' ..;.lr 1/ I--r;ors:, 90°..;.t9 V

/V .. A)~ V ~ ~ E/1"

~ .... I 10 20 30 40 so




• 50 Volts VRRM'VRWM

• 30Amperes • 175 0 (TJ)

• Reverse Avalanche Tested



A B .427 .437 10.84 11.09 C .505 12.82 D .800 20.32 E .432 .442 10.97 11.22 F .095 .105 2.41 2.66 G .349 .386 8.86 9.80 H .163 .189 4.14 4.80 2 J .250 6.35 M .280 7.11 N 0.50 1.27 P .088 .098 2.23 2.48

Note 1: No. 10·32 UNF·2A Standard Polarity: Stud Is cathode Note2: Full thread within 2'12 threads

Working Rep. Catalog Pro Electron Peak Reverse Peak Reverse Number Number Voltage VRWM Voltage VRRM

SBR3035 BYS31·35 35 35 SBR3040 BYS31·40 40 40 SBR3045 BYS31·45 45 45 SBR3050 BYS31·50 50 50

Series SBR30 BYS31

DO·203AA 00·4

135





Maximum repetitive peak

reverse cu rrent



Typical reverse current, per leg

Typical Junction capacitance

Thermal Characteristics Storage temp range

Operating Junction temp range




Header

Weight

Mounting torque

Dimensions

30 Amps

600 Amps

2Amps

VFM 0.63 volts

'RM 50mA

'RM 2mA

CJ 2000pF

Series SBR30 BYS31

8.3 ms, half sine, TJ = 175°C

f = I KHz, 25°C

'FM = 30A; TJ = 25°C'

VRRM , Tc= 125°C'

VRRM , TJ = 25°C'

VR = 5.0V, Tc = 25°C

Tstg - 55°C to + 175°C

TJ - 55°C to + 175°C

ReJc 1.8°CIW J u n ct Ion to case

Recs 0.3°CIW Case to sink

Copper stud base with a #10·32 UNF·2A; thread for through





151nch pounds maximum

In accordance with JEDEC DO·203AA (00·4) outline

'Pulse test Pulse width 300 I'sec, Duty cycle 2%

136



1000

600

400

200

100

60

40

~

~ 20

E ..: E 10 ~ 5 u 6.0 "E 3 4.0 ~

.2

I';:; ~

/ '/

/ / 175°C 1//

fi 'i/'l 25°C

.4 .6 .8

/~ /'

/ /

1.0 Instantaneous Forward Voltage· Volts

Figure 4 Typical reverse characteristics ~ 1000 :;;

.~ 100

~

10

1.0

~

:2.f= 175°C

~J _150°C

Tj. = 125°C

:J -25°C

. ~ 0.1 I- 0% ° 20%

Percent V RWM

j -° 40)6 60)6

l/:: V ,/

V

1.2 1.4

--!--

.-

80% , 100Y,

Series SBR30 BYS31

Figure 2 Forward current derating ~ 180 - --..... ~ :-- r----~ :--

....... 180° n-

~ 100 Cl 80

60

40

20 a 10

120° J1.

90° 11.

20 30 Average Forward Current· Amperes


10,000

"c.

~ c

6000

4000

2000

.~ 1000

~ 600 u 400 c o 'il 200 c ~

...., 100

-....

TJ=25°C

0.1 0.5 1.0 Reverse Voltage - Volts

Figure 5

~

5.0 10

Maximum forward power dissipation ~ 50

~ 40 c

'! .~ 30 o ~ 20 i? E E 10 ..

!i1 ...... 00

TJ=175°C

180 0 11.

120° 1l./" L /.~ V

d e:::--~

10 20 30


40

~C

40

olc-

50

50 100

-

50

137

Dual Schottky Rectifier 30 A Avg; VRRM up to 45 Volts

• Designed for center tap rectification and commutation

• 45 Volts VRRM I VRWM

• 160° (TJ)




A 0.875 22.23 Dla. B 0.250 0.450 6.35 11.43 C 0.312 7.92 D 0.038 0.043 0.97 1.09 Dia. E 1.177 1.197 29.90 30.40 F 0.655 0.675 16.64 17.15 G 0.420 0.440 10.67 11.18 H 0.525 13.34 Rad. J 0.151 0.161 3.84 4.09 Dia. K 0.205 0.225 5.21 5.72 L 0.135 3.43 M 0.188 4.78 Rad.

Working Catalog Peak Reverse Number Voltage VRWM

5D241 35 @ 125°C TJ

5D24145 45 @ 125°C TJ

138

Series SO 241

rAl ~=J' j

o.JL M

G

Pinl~ Case Pin 2

Terminal Connections Pin 1 Anode 1 Pin2Anode2 Case· Common Cathode

TO·204AA (To·a)


Series SO 241


Maximum average forward current 'F(AV)

Maximum surge current 'FSM

Maximum peak forward voltage VFM

Maximum peak reverse current 'RM

Typical junction capacitance CJ


Storage temp range




30 Amps Sine wave at Tc =96°C

33 Amps Square wave at Tc = 93°C

400 Amps 8.3 ms, half sine, TJ = 160°C

0.47 volts 'FM = 10A: TJ = 125°C'

0.6 volts 'FM = 20A: TJ = 125°C'

100mA VRRM , Tc = 125°C'

1500pF VR =5.0V, Tc =25°C

- 55°C to + 175°C

-55°Cto +160 oC

1.4°C/W Junction to case

Case to sink


Base Nickel plated steel.

Header Glass to metal construction.

Weight Approximately 1.0 ounce (28 grams)

Dimensions In accordance with JEDEC TO·204AA (TO-3) outline 'Pulse test: Pulse width 300 !-,sec, Duty cycle 2%

139



1000

600

400

200

100

60

40

~ 20 Co E « ~ 10

~ 06.0 "Ie '" ~ 4.0

.E " " ~ 2.0

r rr

f7 A

125°C II. 25°C

II II

7

L.-- -:::: t::: ::

"Co

Ii

Series SD 241

Figure 2 Max. non repetitive surge current at rated load conditions

400

" ~ 320 ~ E « I: 240

~ () 160 "Ie '" ~ t£ 80

'" '" .r 0

I\. \.

'\ '\.

1.0 2.0

t'\. , TJ = 160°C

r-... 1

""'i-I

4.0 6.0 10 20

Number of Cycles

Figure 3 Typical junction capacitance/per leg 10.000

6000 4000

2000 I-...

40 60 100

§ 1000 '0 600

TJ = 25°C I

~ u 400 ~

'B 200 ~

~ ~ -= 1.0

0.2

II ~ 100

0.4 0.6 0.8 1.0 1.2



100

" ~ ~ E « 10 E

~

~ :; 1.0 ()

" ~ ~ c:

~ .~

>- .0

140

1

1

TJ

r:;;;o' ~

I ..........

./

0% 20% 40%

Percent· VRWM

150°C

60%

1.4 1.6

125°C~ .... 75°C-

25°C

80% 100%

0.1 0.5 1.0 5.0 10 50100 Reverse Voltage ~ Volts

Figure 5 Maximum forward power dissipation

c o

50

40

~ 30 .~

is

~ rr.

20

10

f--

~ o o

I 1 1 DC

90° ('lorn J 180°('l}.80°.l1../

60 0-r120 '/1 IAOrlf~orJL ~Oo / y

or.l1./ 'jV /V V;8bo 1800l-.-

/V/~ V 1+ -I

/Vh~V ~1I-f-!..I' f.!.j--

~~ Conducti0i-angle

10 20 30 40 50


Dual Schottky Rectifier Series SBT30 30 A Avg; VRRM up to 50 Volts BYS79

• Guard ring reverse protection rAl • 50 Volts VRRNI VRWM • 30Amperes T-1, • 175 0 (TJ)

• Center tap c ' L __

Dim. Inches Millimeter o.J H

Minimum Maximum Minimum Maximum Notes M

A 0.875 22.23 Dia. G

B 0.250 0.450 6.35 11.43 C 0.312 7.92 D 0.038 0.043 0.97 1.09 Dia. E 1.177 1.197 29.90 30.40 F 0.655 0.675 16.64 17.15 G 0.420 0.440 10.67 11.18 H 0.525 13.34 Rad. J 0.151 0.161 3.84 4.09 Dia. Pin1~ K 0.205 0.225 5.21 5.72 Case

L 0.135 3.43 Pin 2

M 0.188 4.78 Rad. Terminal Connections Pin 1 Anode 1

Working Rep. Pin2Anode2 Catalog Pro Electron Peak Reverse Peak Reverse Case· Common Cathode Number Number Voltage VRWM VoitageVRRM

SBT3035 BYS79·35 35 35 TO·204AA

SBT3040 BYS79·40 40 40 (TO·3)

SBT3045 BYS79·45 45 45 SBT3050 BYS79·50 50 50

141


Electrical characteristics Average output current per pkg

Max average forward current, per leg


Maximum repetitive peak reverse current



Typical Reverse current, per leg



Storage temp range


Maximum thermal resistance per leg,

per package,

~§al thermal resistance


'F(AV)

'F(AV)

'FSM

'R(OV)

VFM

'RM

'RM

CJ

Tstg

TJ

ReJc

0.1°CIW

30Amps

15Amps

SOOAmps

2Amps

O.SSvolts

50mA

2mA

2000pF

Tc= 150°C

Tc= 155°C

Series SBT30 BYS79


f= I KHz, 25°

'FM = 30A: TJ = 25°C·

VRRM , Tc = 125°C·

VRRM, TJ =25°C·

VR =5.0V, Tc =25°C

- 55°C to + 175°C

- 55°C to + 175°C

1.4°CIW Junction to case

0.84°CIW

Case to sink

Base Nickel plated steel. Glass to metal construction.

Header Nickel plated steel.

Weight Approximately 1.0 ounce (28 grams)

Dimensions In accordance with JEDEC TO-204AA (TO-3) outline

• Pulse test: Pulse width 300,.,sec, Duty cycle 2%

142



1000

~ ~

600

400

200

100

60

40

Q:j 20 c. E

<1:

C 10 ~ ~ u 6.0 "E

~ 4.0 & ~

~ 2.0 l!i ~ ;; E 1.0

l-

o

I/-~

I-1-175°e 1// V II

'/ II 'f 150oe

!. I/zkoe

I

.2 .4 .6 .8

/~ /'

V

1.0


Figure 4 Typical reverse characteristics

~ 1000

! ~ 100

T~ - 175°C

TJ = 150'e

10 ~J= 12s'e

1.0

r!J = 25'e

0.1 0% 20% 40% 60%

Percent V RWM

:..... l.....-:: V

./ '/

V

1.2 1.4

-.... r--

-80% 100%

Series SBT30 BYS79

Figure 2 Forward current derating p 180

~ 160 - -;--140 ~

E ~

OC(1800 Per Leg Jl ) 120

~ 100

i3 80

60

40

20

180°(900 Per Leg .n 1

240°(1200 Per Leg.fl.)

o 10 20 30 40 Average Forward Current Amperes· Per Package

Note: Same Conduction Angle Per Leg

Figure 3 Typical junction capacitance per leg 10,000

u. c.

1)

6000

4000

2000

~ 1000 .~

600 c.

'" U c: o

400

'il 200 c: :J .., 100

-T J=25°C .........

50

0.1 0.5 1.0 5.0 10 50 100



~ 50

~ c 40

1 .~ 30 i5

J 20

E , 10 E 'i(

:1l ~ 00

Tf175°C

1800 Jl

1200 n .,/ ".-

~I::?:: .-/ k:::;::: V

e:' 10 20 30


)e t--

40 50

143


• Guard ring reverse protection • 45 Volts VRRMIVRWM

• 60Amperes • 160° (TJ)



A B .677 .687 17.19 17.44 C .793 20.14 0 1.000 25.40 E .432 .442 10.97 11.22 F .125 .135 3.17 3.42 G .323 .353 8.20 8.96 H .220 .249 5.58 6.32 2 J .375 9.52 K .156 3.96 M .510 12.95 Dia. N .080 2.03 P .140 .175 3.55 4.45 Dia

Note 1: Standard polarity: Stud Is cathode %-28UNF-2A Note 2: Full threads within 2% threads

Working Catalog JEDEC Peak Reverse Number Numbers Voltage VRWM

SD51 35 @ 125°C TJ SD5145 45@ 125°C TJ

144

p

A

Series SO 51

DO-203AB (00-5)

Schottky Rectifier Series SO 51 60 A Avg; VRRM up to 45 Volts








Storage temp range





Base

Header

Weight

60Amps Sine wave at Tc =94°C

66Amps Square wave at Tc =90oC


0.6 volts

200mA

2300pF

- 55°C to + 165°C

- 55°C to + 160°C 1.0oC/W

0.30 oC/W

Junction to case

Case to sink

Copper stud base with a 1/4·28 UNF·2A; thread for through





Mounting torque 30 Inch pounds maximum

Dimensions In accordance with JEDEC DO·203AB (DO·5) outline

'Pulse test: Pulse width 300l'sec, Duty cycle 2%

145

Schpttky Rectifier 60 A Avg; VRRM up to 45 volts


1000 800

600

400 //

200

100 80

60

40

~ 20 ~ ~ Co E

" c 10 ~ 8.0

o 6.0 "E '" ~ 4.0 o LL ~ ~

~ 2.0

~

-

J I j

1.0 0.2

/ V V/

V V

-12S'Ct fi 2S'C

/ / '/ /

! I

0.4 0.6 0.8 1.0 1.2



1000 ~ 500 :;; lS0'C

1.4

Series SO 51

Figure 2 Max. nonrepetltlve surge current at rated load conditions

1000

~

~ 800

~ " 600 c

~ o 400 "E '" ~ <; 200 LL

'" '"

~

~ o 1.0

"'"

IIII III

+~~116QOC

.......... ... -2.0 4.0 6.0 10

Number of Cycles

Figure 3 Typical Junction capacitance

10000

u.

6000

4000

20 40 60 100

':" 2000

1l iij 1000 .~ 600 g-

TJ = 25°C .......... ~

o 400 c:

'fl 200 c: ~ 100

1.6 0.1 0.5 1.0 Reverse Voltage - Volts

FigureS

5.0 10

Maximum forward power dissipation

50 100

~ 50r--r--r--r~<-7-c~~rr~~-r--;

1ii !100 E 50 ti i--12S·~slc.§

s: 40

c 0

c

~ 10 8 5,0 ~

~ ~ 1.0 ~ .05 ~ .~

I- 0.1

146

TJ

./ ..-::,....

./ ./

0% 20% 40% 60% 80%

Percent· VRWM

2S'C ~ 30 .~

is ~ 20 ~ 0 Q.

E E ·x '" ::;

100%

·hr-i~~~f7~I~·---~

JI~ f---I--I+J"""<f4'f-.+- 1-'-1 I-!..J f---f+'~ld3;jL-I-+-+-Co'nduct'ion

~""--+-_I--+_-f-angle TJ'= 150"C

20 40 60 80


100

Schottky PowerMod FST60

• Electrically Isolated Base A ----l N

• Guard ring reverse protection • Center Tap • 50 Volts VRRMIVRWM • 60 Amperes c • 175°C Junction Temperature



A 1.995 2.005 50.67 50.93 C 0.495 0.505 12.57 12.83 E 0.990 1.010 25.15 25.65 F 2.390 2.410 60.71 61.21 G 1.490 1.510 37.85 38.35 H 0.120 0.130 3.05 3.30 J 0.400 10.16 K 0.240 0.260 6.10 6.60 to Lead CL L 0.490 0.510 12.45 12.95 M 0.035 0.045 0.89 1.14 Square N 0.175 0.195 4.45 4.95 Diameter

---l 1.200 ~~ 9 Pins eq sp at .150

DETAIL A

)J£~:-i} r l f

P 0.032 0.052 0.81 1.32

Notes: BASEPLATE: Nickel plated copper; electrically isolated PINS: Nickel plated copper CENTER TERMINALS: Common cathode

Working Rep. Catalog Pro Electron Peak Reverse Peak Reverse Number Number Voltage VRWM VoitageVRRM

DETAILA

FST6035 BYS98-35 35 35 FST6040 BYS98-40 40 40 FST6045 BYS98·45 45 45 FST6050 BYS98·50 50 50

M

e--l~

II elle

147

Schottky PowerMod

Electrical characteristics Average forward current per pkg IF(AV)

Average forward current per leg IF(AV)

Maximum surge current per leg IFSM

Maximum repetitive peak IR(ov)

reverse current per leg

Maximum peak forward voltage per leg VFM

Maximum peak reverse current per ieg IRM




Storage temp range


Maximum thermal resistance per leg, RSJC

per package,

Typical thermal resistance RScs

60 Amps

60Amps

1000 Amps

2Amps

0.70 volts

60mA

3mA

2300pF

Tc =1500C

Tc =128°C

FST60


f= I KHz, 25°

IFM =60A: TJ = 25°C'

VRRM, Tc =125°C'

VRRM , TJ = 25°C'

VR =5.OV, Tc =25°C

- 40°C to + 175°C

- 40°C to + 175°C 1.00CIW

0.6°CIW

0.1°CIW

Junction to case

Case 10 sink


Weight 2.5 ounce (71 grams) typical

'Pulse test: Pulse width 300l'sec, Duty cycle 2%

148

SchoHky PowerMod


100°mEEEEEE~ / 600

400 VI 1/

IA II 200

100 80

60

40 II on ., li 20

71 c. E « C 10 ., ~ ~ 6.0 :. ~ 4.0 u. on 5 ~ 2.0 1--+--I-I-II--I--II--I-'\-..j...-+-I--I---1-~H

~ ;;; l!! II .E 1.0!.-..I.....JI.L.L_U.L....I.....l.....l_L-J.,.....J........I....J1-J

o .2 .4 .6 .8 1.0 Instantaneous Forward Voltage - Volts

Figure 4 Typical reverse characteristics Xl 1000

~

~ ~ 100

'-.!J -175°e

TC=1500C

10 [TJ~125OC

1.0 TJ-75°e l-

~~=25oe

0.1 0% 20% Percent V AWM

40%

~

60%

1.2 1.4

I"..-

80% 100%

FST60

Figure 2 Forward current derating

oql60° Per LegJl)

240°(120° Per Leg Jl')

180°(900 Per Leg n )

20 40 60 80 Average Forward Current - Amperes - Per Package



10,000

u. c.

6000

4000

, 2000 1l ~ 1000

'i 600 a 400 c:

'fl 200 c: ~ 100

.... TJ =25oe ~~

100

0,1 0.5 1.0 5,0 10 50 100 Reverse Voltage - Volts

Figure 5 Maximum forward power dissipation on 50

~ 40

c: .~ .~ 30

i5 ~ 20

d'. § 10 E .~

::;; 0

~J=175oe 1800 A ) .-120° Jl

V IR V

~ 'l ~/

~ I~

~ o 20 40 60 Average Forward Current - Ameeres

/ Voe f--

80 100

149



• 50 Volts VRRMIVRWM

• 80Amperes • 175 0 (TJ)



A B .677 .687 17.19 17.44 C .793 20.14 D 1.000 25.40 E .432 .442 10.97 11.22 F .125 .135 3.17 3,42 G .323 .353 8.20 8.96 H .220 .249 5.58 6.32 2 J .375 9.52 K .156 3.96 M . 510 12.95 Dia . N .080 2.03 P .140 .175 3.55 4.45 Dia.

Note 1: No. %·28 UNF·2A Standard Polarity: Stud is cathode Note 2: Full thread within 2% threads

Working Rep. Catalog Pro Electron Peak Reverse Peak Reverse Number Number Voltage VRWM Voltage VRRM

SBR8035 BYS71·35 35 35 SBR8040 BYS7HO 40 40 SBR8045 BYS71·45 45 45 SBR8050 BYS71-50 50 50

150

p-"

A

Series SBR80 BYS71

DO·203AB (00·5)


Electrical characteristics Maximum average forward current


Maximum repetitive peak reverse current



Typical reverse current, per leg



Storage temp range


Peak junction temp.




Base

Header

Weight

Mounting torque

Dimensions

IF(AV)

IFSM

IR(OV)

BOAmps

1000 Amps

2Amps

0.74 volts

60mA

3mA

2300pF

Tc = 120°C

Series SBR 80 BYS71

B.3 ms, half sine, TJ = 175°C

f = I KHz, 25°C

IFM = BOA: TJ = 25°C'

VRRM , Tc= 125°C'

VRRM , TJ = 25°C'

VR =5.0V, Tc =25°C

Ts1g

TJ

TJM

ReJc

Recs

- 55°C to + 175°C

- 55°C to + 175°C

0.B3°CIW

0.3°C/W

Junction to case

Case to sink

Copper stud base with a %·2B UNF-2A; thread for through






In accordance with JEDEC DO-203AB (DO·5) outline

• Pulse test: Pulse width 300 !,sec, Duty cylce 2%

151


Figure 1 Maximum forward characteristics 1000

600

400

200

100

60

40

~ Q) 20

! c 10 ~ :>

~ 6.0

~ 4.0 & '" :>

~ 2.0

E ~ ;; .5 1.0

- -

J

J. W

Ii V

!J rI V

176'C I

/. I 11/150'C II

25'C

I

/

o .2 .4 .6 .8 1.0 Instantaneous Forward Voltage· Volts

Figure 4 '" Typical reverse characteristics ~ ~ Co

~ :1

1000

100 T = 1750 c -TJ -150'C -'T' - 125'C

F-J_

/

1.2 1.4

TJ -75'Cr- -T=- 25'C F-J

20% 40% 60% 80% 100% Percent V RWM

152

Series SBR 80 BYS71

Figure 2 Forward current derating ~ 180 - r--t-

I"""'-~ b -t--~ 160

1§ 140 & ~ ---

r- oc ....... ~ 120

~ 100

C; 80 :0

1800 Jl

120' Jl

~ 60

;;f 40 E ~ 20 'x 0 20

900 Jl

40 60 ~ Average Forward Current - Amperes

Figure 3 Typical Junction capacitance 10.000

6000

4000

2000

1000 600

400

200

100

.....

TJ = 25'C r-....

0.1 0.5 1.0 5.0 10 Reverse Voltage - Volts


55

'" 50 I 180'

V

BO

.....

~ c 40 ,~

T = 175'C _J

lio' JlI

~ /

~ '~ 30 i5

J 20

E § 10 .. ~

::; 0

// / /.

W / .# ./ /"

w 1#

./ o 20 40 60 80 A.verage Forward Current - Amperes

100

50 100

/ DC

100

Schottky PowerMod

II Electrically Isolated Base II Guard ring reverse protection II Center Tap II 50 Volts 13 160 Amperes II 175°C Junction Temperature



A 1.995 2.005 50.67 50.93 B 0.300 0.325 7.62 8.26 C 0.495 0.505 12.57 12.83 D 0.182 0.192 4.62 4.88 Diameter E 0.990 1.010 25.15 25.65 F 2.390 2.410 60.71 61.21 G 1.490 1.510 37.65 38.35 H 0.120 0.130 3.05 3.30 J 0.400 10.16 K 0.240 0.260 6.10 6.60 to Lead CL

L 0.490 0.510 12.45 12.95 M 0.330 0.350 8.38 8.90 N 0.175 0.195 4.45 4.95 Diameter P 0.035 0.045 0.89 1.14 Q 0.445 0.455 11.30 11.56 R 0.890 0.910 22.61 23.11

Notes: BASEPLATE: Nickel plated copper; electrically Isolated PINS: Nickel plated copper CENTER TERMINALS: Common cathode

Working Rep. Catalog Pro Electron Peak Reverse Peal< Reverse Number Number Voltage VRv\lM VoitageVRRM

FST16035 BYS92-35 35 35 FST16040 BYS9240 40 40 FST16045 BYS92-45 45 45 FST16050 BYS92·50 50 50

F5f160

DETAIL A

DETAIL A

153

Schottky PowerMod FST 160

Electrical characteristics Average forward current per pkg 'FIAIf) 160 Amps Tc =103°C

Average forward current per leg 'FIAIf) BOAmps Tc=112°C

Maximum surge current per leg 'FSM 1000 Amps B.3 ms, half sine, TJ = 175°C

Maximum repetitive peak 'RIOIf) 2Amps f = I KHz, 25°C reverse current per leg 1 I"sec sq u are wave

Maximum peak forward voltage per leg VFM 0.74 volts 'FM=BOA: TJ = 25°C'

Maximum peak forward voltage per leg VFM 0.58 volts 'FM = BOA: TJ = 175°C'

Maximum peak reverse current per leg 'RM 60mA VRRM, Tc = 125°C'

Typical Reverse current, per leg 'RM 3mA VRRM, TJ =25°C'

Typical junction capacitance CJ 2300pF VR=5.0V, Tc =25°C

Thennal Characteristics Storage temp range T.tg - 40°C to + 175°C

Operating junction temp range TJ - 40°C to + 175°C

Maximum thermal resistance per leg, ReJc 1.0oCIW Junction to case

per package, 0.6°CIW

Typical thermal resistance Recs 0.1°CIW Case to sink

Mechanical Characteristics Weight 2.5 ounce (71 grams) typical

'Pulse test: Pulse width 300l"sec, Duty cycle 2%

154

Schottky PowerMod


1000

600

400 h

'(f

1# :/ 200

100

60

40

~ 10

~ 6.0

~ 4.0 ~

o o ~ 2,0 l'l

~ .f 1.0

1750C~

~ V

I h IT VI 25°C

" I 150°C

o .2 .4 .6 .B 1.0 Instantaneous Forward Voltage· Volts


~ 1000

! 100 ~

10

1.0

o. 1

T 175°C

1:-150oC

~J-1125l 1"J-75 °C ,.:;;;0

T--25°C

0% 20% 40% Percent V RWM

-

60%

1.2 1.4

I-

~

80% 100%

FST 160

Figure 2 Forward current derating ~ 180

~ 160

~ 140

E 120 ~

~ u ~

:c j ;;: E

100

BO

60

40

"-"""'IIi ~ ~

....... ~ :::::-- Oq180o Per Legn)

...... t--. j'--....

180°(90° Per Leg n )

2,40;1\200 p~r Le~ Jl J

I I E

20 o 20 40 60 80 100 120140 160 180200

x ~

Average Forward Current - Amperes - Per Package


Figure 3 Typical junction capacitance 10.000

u. c.

~

6000

4000

2000

~ 1000 .~ 600 c. ~ 400

" 'B 200

" o --, 100

TJ = 25°C I"- r-..

0.1 0.5 1.0 5.0 10 50 100 Reverse Voltage - Volts


2200

~ , 180

l .~ ·120

i5

80

40

o

I I I DC

T ;175°C 180° Jl V ~ I-J V" [:7' 1200Jl ~

A V

~ '/' ~ V

~ l,...ao I" o 20 40 60 80 100 120 140 160 180200 Average Forward Current - Amperes

155

Schottky PowerMod

• Guard Ring Reverse Protection

• Center Tap • 50 Volts VRRM/VRWM • 200 Amperes • 175°C Junction Temperature • Reverse Avalanche Tested



A 2.45 62.23 B 1.35 1.40 34.29 35.56 C .70 .80 17.78 20.32 D .625 15.88 E 3.14 3.16 79.76 80.26 F 3.65 92.71 G .28 .30 7.14 7.67


FST20035 BYS97-35 35 35 FST20040 BYS97-40 40 40 FST20045 BYS97-45 45 45 FST20050 BYS97-50 50 50

156

FST200 BYS97

'1.·20 UNC With

g::§~~.'~'

f~fT~ 0 ~.~ Terminal 1 Terminal 2

* * Baseplate

Schottky PowerMod

Electrical characteristics Average forward current per pkg

Average forward current per leg

Maximum surge current per leg

Maximum repetitive peak reverse cu rrent per leg

IF(AV)

'F(AV)

IFSM

IA(oV)



Maximum peak reverse current per leg 'RM




Storage temp range


Maximum thermal resistance per leg, RSJC

per package,

Typical thermal resistance RScs

200 Amps

100Amps

2000 Amps

2 Amps

0.8 volts

0.6 volts

120mA

6mA

4600pF

Tc =131°C

Tc =135°C

FST200 BYS97


f= I KHz, 25° 1!,sec square wave

'FM = 200A: TJ = 25°C'

'FM = 200A: TJ = 175°C'

VRRM , Tc =125°C'

VRRM , TJ =25°C' VR=5.0V, Tc =25°C

-400Cto +175°C

- 40°C to + 175°C

.500CIW

.300CIW

.04°CIW

Junction to case

Case to sink


Weight 3.4 ounce (95 grams) typical

Dimensions In accordance with JEDEC TO·244 outline 'Pulse test: Pulse width 300!,sec, Duty cycle 2%

157

Schottky PowerMod


1000

~ C-E «

600

400

200

100

60

40

20

c 10 ~ :; ~ 6.0

~ 40 & ~ ~

g ~ 2.0

E ~ ;; .E 1.0

o

U

VI /

~ / I

" / II

175°C h 1/ /250C

150°C

I I 1/

/1 .2 .4 .6 .8

I

1.0 Instantaneous Forward Voltage - Volts


Figure 2 Forward current derating

;.' 180

~ 160 ~

E 140 1l. E 120 ~ ~ 100

'; 80 :c

l-

180° (90° Per Leg It'

I

FST200 BYS97

(lac O Per leg n) - DC

~ 60

~ 40

E 20

240°(1200 Per Leg Jl )

I E 0 20

" 40 60 80 100 120 140 160 180 200 220

~ Average Forward Current - Amperes - Per Package Note: Same Conduction Angle Per Leg


100,000

"c-

60,000

40,000

, 20,000 1l 5'°,000 'u ~ 6000 u 4000 c: o "fl 2000 c: ~ 1000

T J=25°C

1.2 1.4 0.1 0.5 1.0 Reverse Voltage - Volts

Figure 5

5.0 10

Maximum forward power dissipation

r-..

50 100

~lOO0'l!iii!II!I!ii!ii~!!liiii!iil!iI!I!! ~ ! 100 ~

~

~ 200

~ 160 c: o

l120

I I

TJ~ 17Sl0C

I

lS00n

1200n V ./

......-: ",- V DC

:; u ~

i IX:

10 •• 0 ~ 80 ~

1~ E 40 E .~

::; 0 20% 40% 60% 80% 100% 0 20 40 60 80 100 120 140 160 180 200 220

~ ! 0.1 0%

~ ............. .......

~ t:.--'" ...-:~ V

~ ~ -~ Percent V RWM Average Forward Current - Amperes

158

Schottky PowerMod

• Guard Ring Reverse Protection

• Center Tap • 50 Volts VRRM ' VRWM

• 300 Amperes • 175°C Junction Temperature • Reverse Avalanche Tested



A 2.45 62.23 B 1.35 1.40 34.29 35.56 C .70 .80 17.78 20.32 D .625 15.88 E 3.14 3.16 79.76 80.26 F 3.65 92.71 G .28 .30 7.14 7.67


FST30035 BYS93·35 35 35 FST30040 BYS93·40 40 40 FST30045 BYS93·45 45 45 FST30050 BYS93·50 50 50

FST300 BYS93

'1,·20 UNC With

~: ;::1/ Captive LoICkwaSher

[~-: r-§--;

f~f~ ~.~ Terminal 1 Terminal 2

* * Baseplate

159

Schottky PowerMod

ElectrIcal characterIstIcs 300 Amps

150Amps

Tc =113°C

Tc= 122°C

FST300 BYS93

Average forward current per pkg

Average forward current per leg

Maximum surge current per leg

Maximum repetitive peak

'FrAV)

'FrAV)

'FSM

'RrOV)


reverse current per leg



Maximum peak reverse current per leg 'RM

Typical Reverse current, per leg 'RM

Typical junction capacitance CJ

Thermal Characteristics Storage temp range Tstg


Maximum thermal resistance per leg, RaJc

per package,

Typical thermal resistance Racs

2Amps f=1 KHz, 25° 1!,sec square wave

0.78 volts 'FM = 300A; TJ = 125°C'

0.78 volts 'FM = 200A: TJ = 25°C'

120mA VRRM , Tc= 125°C'

6mA VRRM , TJ = 25°C'

4600pF VR =5.0V, Tc =25°C

- 40°C to + 175°C

- 40°C to + 175°C

.45°CIW Junction to case

.27°CIW

.04°CIW Case to sink

Mechanical Characteristics Weight 3.4 ounce (95 grams) typical

Dimensions In accordance with JEDEC TO-244 outline

'Pulse test: Pulse width 300 !,sec, Duty cycle 2%

160

Schottky PowerMod


1000

" w

600

400

200

100

60

40

w 20 0. E <{

! 10

~ 6.0

I " ~ o

4.0

~ 2.0

§ 1n .£ 1.0

175°C

o .2

'I h / if

~ /

'/

1// I ~

I

150°C

25°C

.4 .6 .8

/

1.0 Instantaneous Forward Voltage· Volts


:!E E e 5 u w "' ~ w

ex:

~ .~ ... 0.1

0% 20% 40% Percent VRWM

60%

1.2 1.4

80% 100%

Figure 2 Forward current derating (1)180 5 '§ 160 w E"140 w t; 120

~100 w :g 80

~ 60 <C E 40 :J E 20

......... .... ~ ;:::::..... ...... .:::::::::

'80°(900 Per Leg Jl )

:::::-..

FST 300 BYS93

DC(180 o Per Leg Jl )

,...

240°(120° Per LegJl)

I .~

::;; a 40 80 120 t60 200 240 280 320 360400 Average forward Current - Amperes - Per Package

Note: Same conduction angle per Jeg


100.000

U. 0.

60.000

40.000

20.000 T J=25°C ~

~ to.OOO .~

~ u

6000

4000 o

'B 2000 o ~ 1000

0.1 0.5 t.O 5.0 to Reverse Voltage - Volts


240 1800 Jl

1200 11.

J/ 200

160 / '/

/

1// / V/

120

......

/

/ V

~ TJ = 175°C A I'

80

~ W 40

o !/

50 tOO

I/oc

o 40 80 120 160 200 240 280 320 360 400 Average Forward current - Amperes

161

TO·220 Triacs

Triacs

Triacs for 400 to 800 V peak off· state voltage and maximum rms on·state currents of 4A and 6 A

Application

Case

Mainly for ac power controllers in power supply units and devices of the consumer electronics, e.g. for motor controls, brightness controls and electronlcal switches.

Plastic case TO 220 AB, the anode is connected to the mounting flange. A2

Associated parts Matching plate C67067·A9000·C 166 Mica washer C67067·A9000·C 165

System Silicon, fully diffused, glass passivated

Type Maximum repetitive peak off·state or reverse voltage VORM VRRM

TXC10K40 400V

TXC10K40M

TXC10K50 500V

TXC10K50M

TXC10H60 TXC10K60 TXC10L60 600V

TXC10H60M TXC10K60M TXC10L60M

TXC10H70 TXC10K70 TXC10L70 700V

TXC10H70M TXC10K70M TXC10L70M

TXC10K80 800V

TXC10K80M

164

Maximum rms on·state current ITRMS

4A

6A

4A

6A

4A

6A

4A

6A

4A

6A

A1 anode 1 A2anode2 (case) Ggate

Minimum gate trigger current IGT

Polarity to terminal A1

A2+,G+ A2+,G· A2;G·

50mA 50mA 50mA

50mA 50mA 50mA

50mA 50mA 50mA

50mA 50mA 50mA

25mA 25mA 25mA 50mA 50mA 50mA 75mA 75mA 75mA




50mA 50mA 50mA

50mA 50mA 50mA

TXC10

Case temperature measuring point

I

----J 5.08 I--0.4xO.8

Dimensions in mm

Minimum holding current IH

A2;G+

- 50mA

- 50mA

- 50mA

- 50mA

50mA 25mA - 50mA - 75mA

50mA 25mA - 50mA - 75mA

50mA 25mA - 50mA - 75mA

50mA 25mA - 50mA - 75mA

- 50mA

- 50mA

Triacs TX C10

Main circuit limit values Type TXC10.

Maximum continuous off-state or reverse blocking current ID,/R

Maximum on-state voltage in both directions VT 3.53V

Threshold voltage V(TO} 2.04V Slope resistance (T 115m!1

Maximum rms on-state current ITAM S(I) 4A

Single cycle surge current sine wave50Hz hSM(I} 40A

i't value (loading in one direction) fi'dt SA's

Gate circuit limit values

Minimum gate trigger current IGT

Minimum gate trigger voltage in both directions VGT Temperature dependence ofthe gate trigger voltage aVGT

Maximum gate non-trigger voltage in both directions VGD

Maximum permissible positive and negative gate current IGM

Dynamic values, switching behavior

Minimum holding current in both directions IH Critical rate of rise of on-state current in both directions (dijdt)cr

Critical rate of rise of off-state voltage (d vjdt)cr in both directions

Critical rate of rise of off-state voltage (d vjd t)crq following commutation in both directions

Thermal values

Maximum continuously permissible junction temperature Sj(I)

Operating temperature range Sj


Thermal resistance

Mechanical values

Leakage path

Weight

Vibration resistance

Humidity category

TXC 10 ... M Secondary conditions

0.4 rnA Sj = 1150 C, at VDRM, VRRM

2.36 V Sj = 25 0 C, IT = 3 ITAMS(I}

1.32 V } Equivalent straight line for loss 57 m!1 calculation, Sj = 1150 C

6A Sc = 90°C

see table

2V

-3mVjK(typ.) Sj = -40tol15"C

0.2V

3A

see table

+ 115°C

-40to +115°C

-40to+150°C

Peak value, tp ;;;; 10 J.ls

Sj = 115°C

Sj = 115°C, Vmax. = 0.67 VORM or VRRM

.9j=115°C. Vmax. = 0.67 VDRM or VRRM (dijdt)q = 0.53 hRMs(I}Ajms

2.7 KjW Loading with sinusoidal current, 360 0 angle of current flow and

approx.2mm

approx.2g

109 F

f = 40 Hzt060 Hz

Anode l-anode2

At 50 Hz, without heat sink

In accordance with DIN40040

165

Triaes

5

3

9

7

5

3

1 0

On-state characteristic curves, TX C 10 ...

TX C ,n 10 10,

I.~ III

e- -- ",-25"(;

f-Ft= ~-115"C f- ',j Jean IvalJe [I

1/ /

/ 1/ Upp.er limit value

/1/

I 1/ 1/ /

I--- -1.0 1.4 1.8 2.2 2.6 3.0 3.4 V 3,8

Input characteristic curves, triggering ranges and curves of constant power dissipation

rnA 10'

TXC10 01011

1W

O,5W Y _40°C --t-:

OJWI ~2W 25"C

5

1 10

5

llJ'lO 0.5 1.0 1,5 2.5 V

166

On-state power dissipation characteristic curves (overcurrent range), mains operation 40 to 60 Hz, TX C 10 ...

0

6

2

8 A =1800 1// f---+""12uo ,".., f// 4~~:"V '/ __ 300 )/';(/ /

XIY 10

~ ':/Y 6 ff#

~:7' ~

TXClO .' " 1/-'-,----:::'

'/ '/

/ [/

/

/ '/ /

/ 1/

/ 1/

~~!L-, fRUS_

• f----

T T T f----

10121416A18 -frRMS

22 A

10

2

5

0

5

0

5

0

5

TXC10

On-state characteristic curves, TX C 10 ... M

TXC 10" " 10

12"=25"C 1/ , fl -~=11i"C

If,i Mean value I

1/1/ /UPP'er

limit value

~ Il

/

~ M U W U ~ U U U U ~vU -V,

On-state power dissipation characteristic curves (overcurrent range), mains operation40t060 Hz, TX C 10 ... M

TX em .M.n 1<> /

II / '// 1/

I.=~~~:, / / 1/ , /

900 ,".., j '/1/ ~:, i<7 '/ / 'Y <y '7- 717

~ .I:: '/ ./ -

lj":: '/ r, ; i': -~ -/'

-

I..&f!: :;:;:--o c;;iIP I I

10121416182022A24

-fTRMS

Triacs TXC10

On-state power dissipation characteristic curves, TX C 10 _ .. , nomogram for determination of max. rms on-state currents (limit values) for various cooling conditions, mains operation 40 to 60 Hz

10

W

f 8

-0 ~ ~

~20 °c 100

{}A-

/ I~ ~ ~ ::::::-~ :::;::::

80

/ ./

V /' L

/ ./ ./ V V ~ ,/ V k/': /" V

......- --:::--:::: r--~ --::: ;;::::::.

60 40

rXC10 ." 6

8~ r--/' w

r-~~! /10 ' lRUS r--/12

r-- r 1/ 15

20 1/// -25 h t/'/ f-

30-r--~ /' ~~-r-I--- ~ A ,-

20 00

On-state power dissipation characteristic curves, TX C 10 ... M,

1 VI / / / V/ / V

8 1"1-V/ / '// ~ 6

'// ~ 1800el 120°

// """ "

90° 60° 4

,/ 30°

", 0

w

f

2

nomogram for determination of max. rms on-state currents (limit values) for various cooling conditions, mains operation 40 to 60 Hz

12

P W

r 10

o

/ ~ ~ ~ ~ ..-

./

V ,/

/' V /

/. ~

------~ r--_ -:::: ~ I:::::::

6-,/ ~

./ W

./" 8-

V 10

L L 12

./ ........- 15 ".- V ~~-V _25

::.-::: r:-- I-""" 30-

~~-

120°C 100 80 60 40 20

110 oc

'" f 110

100

90

80

70

65

I}A-

Permissible case temperature Se versus on-state current, mains operation 40to 60 Hz

rXC1QC10 M n

f:::: t--.. ........

"" ........ Sinusoidal full wave-........ !

........

!'-.. ...............

TXC10 ... TXC10 ... M - f-

I

15

r--

f--

TXClO M ." r-- I I r- r- At- I ~ A·180~, r- r- ' IRU' -120°

ooo~ r- - 600 r- r. - 30;"

A /.,

r-- // V/, r- /. ~ ........-

~ ::,....-r-~ ~

~ ~ 00

o 0.5 1.0 1.5 1.0 1.5 3.0 3.5 40 4.5 5.0 5.5 6.0 6.5 A 7.5 -fTRMS

u, /1 /

/ / /1 V/ / V

/ V/ ./ KV / V

:f <:L V" /" ,y ./" Y

167

Triac Series 2N6343 2N6344 2N6345 8 AMPS RMS; VDRM up to 800 Volts

• 8 Amperes RMS • Blocking voltage up to 800 volts

Case Temp. Reference Point

• Glass passivated chip for maximum reliability



A 0.560 0.625 14.23 15.87 B 0.380 0.420 9.66 10.66 C 0.140 0.190 3.56 4.82 F 0.139 0.147 3.531 3.733 H 0.250 6.35 K

J 0.014 0.022 0.35 0.56 ~ K 0.500 0.502 12.70 14.27 N 0.190 0.210 4.83 5.33 _II--J Q 0.100 0.120 2.54 3.04 S 0.020 0.055 0.51 1.39 1 MT 1

T 0.230 0.270 5.85 6.85 2 MT 2 3 Gate

W 0.027 0.035 0.68 0.89 4 MT 2

TO-220AB

Catalog Number Rep. Peak Off·State Voltage.

VORM VRRM (Volts)

2N6343 400 2N6344 600 2N6345 800

168

Triac 8 AMPS RMS; VDRM up to 800 Volts


On State

Max. RMS on-state current

Max. peak one cycle non-repetitive

surge current

Max. I't capability for fusing

Switching

Max. peak on-state voltage

Max. thermal resistance Max. holding current

Max. holding current

Thermal values



Off State

Max. leakage current

Critical rate of rise of commutation voltage

Triggering

IT(RMS)

IORM

dvldt

Max. peak gate current IGM

Max. required DC gate current IGT

to trigger 25°C, Vo<?::12V

Note 1

Max. required DC gate voltage VGT

to trigger (note 1)

Min. required DC gate voltage VGO

to trigger (note 2)

Series 2N6343 2N6344 2N6345

BAmps

100Amps

40A'S

1.55 Volts

2.2°C/W

40mA

75mA

Tc=90°C all conduction angles

one cycle, 60HZ, TJ max = 100°C

ITM = 11A peak

either direction, 25°C DC, junction to case

25°C, V supply = 12V

-40°C, V supply = 12V

- 40°C to + 100°C

- 40°C to + 150°C

2mA TJ = 100°C and VORM

5v/p.Sec. TJ = BOoC, Vmax = .67 VORM

2.0A positive or negative gate

current, tp = 10p.Sec.

50mA MT2+,G+

75mA MT2+,G-

50mA MT2-,G-

75mA MT2-,G+

2.5volts 25°C, Vo<?::12V

0.2 volts 115°C, O.5VORM, or

0.5VRRM

Note 1 Max. required gate trigger current (or voltage) is the lowest value

which will trigger all units under the conditions shown.

Note2 Min. required gate trigger voltage is the value below which no unit

will trigger with rated VORM principal voltage.

169

Triaes

Trlacs for 400 to 800 V peak off·state voltage and maximum rms on·state currents of 8A and 12A

Application Mainly for ac power controllers in power supply units and devices of the consumer electronics, e.g. for motor controls, brightness controls and electronlcal switches.

Case Plastic case TO 220 AB, the anode is connected to the mounting flange.

Associated parts Matching plate C67067·A9000·C 166 Mica washer C67067·A9000·C 165


A1 anode 1 A2 anode 2 (case) G gate

A2

Type Maximum Maximum Minimum gate trigger current 'GT

repetitive rms peak on·state off·stale or current Polarity to terminal A1 reverse 'TRMS voltage VDRM VRRM A2+,G+ A2+,G- A2-,G-

TXD10K40 8A

50mA 50mA 50mA TX D10L40 75mA 75mA 75mA TXD10K40M

400V 10A 50mA 50mA 50mA

TXD10L40M 75mA 75mA 75mA TXD10K40P

12A 50mA 50mA 50mA

TX D10L40P 75mA 75mA 75mA TX D10K50 8A 50 rnA 50mA 50mA TXD10K50M 500V 10A 50mA 50 rnA 50mA TXD10K50P 12A 50mA 50mA 50 rnA TX D10H60 25mA 25mA 25mA TXD10K60 8A 50mA 50mA 50 rnA TX D10L60 75mA 75mA 75mA TX D10H60M 25mA 25mA 25mA TXD10K60M 600V 10A 50mA 50mA 50mA TXD10L60M 75mA 75mA 75mA TXD10H60P 25mA 25mA 25mA TXD10K60P 12A 50mA 50mA 50mA TXD10L60P 75mA 75mA 75mA TXD10H70 25mA 25mA 25mA TXD10K70 8A 50mA 50mA 50mA TXD10L70 75mA 75mA 75mA TXD10H70M 25mA 25m A 25mA TXD10K70M 700V 10A 50mA 50mA 50mA TX D10L70M 75mA 75mA 75mA TX D10H70P 25mA 25mA 25mA TXD10K70P 12A 50mA 50mA 50mA TXD10L70P 75mA 75mA 75mA TXD10K80 8A 50mA 50mA 50mA TXD10K80M 800V 10A 50mA 50 rnA 50mA TXD10K80P 12A 50mA 50mA 50mA

170

TXD10


-----1 5,08 t--0,4xO,8

Dimensions in mm

Minimum holding current 'H

A2-,G+

- 50mA - 75mA

- 50mA - 75mA

- 50mA - 75mA

- 50mA - 50mA

- 50mA 50mA 25mA - 50mA - 75mA 50mA 25mA - 50mA - 75mA

50mA 25mA - 50mA - 75mA 50mA 25mA - 50mA - 75mA 50mA 25mA - 50mA - 75mA 50mA 25mA - 50mA - 75mA

- 50mA

- 50 rnA

- 50mA

Triacs

Main circuit limit values TypeTXD10 ..

Maximum continuous off-state or reverse blocking current

Maximum on-state voltage in both directions

Threshold voltage Slope resista nce

Maximum rms on-state current

Single cycle surge current sine wave 50 Hz i'tvalue (loading in one direction)


I D, fR

UT

V(TO) rT

ITAMS(I)

IrSM(I)

fi'dt

Minimum gate trigger current fGT

Minimum gate trigger voltage in both directions VGT Temperature dependency ofthe gate trigger voltage aVGT

Maximum gate non-trigger voltage in both directions

Maximum permissible positive and negative gate current


Minimum holding current in both directions IH Critical rate of rise of on-state current in both directions (di/dtJcr Critical rate of rise of off-state (d v/d t)cr voltage in both directions

3.52V

1.85V 64mn

BA

BOA

32A's

Critical rate of rise of off-state (d v/dt)crq voltage following commutation in both directions

Thermal values

Maximum continuously permissible junction temperature Sj(I)

Operating temperature range Sj

Storage temperature range Ss

Thermal resistance RthJC

Mechanical values

Leakage path

Weight


Humidity category

TXD10

010 010 Secondary conditions ... M ... P

O.4mA Sj = 115° C, at VDRM, VRRM

Sj = 25°C, IT = 24A 2.82V IT = 30A

2.5V IT = 36A

1.45 V 1.1 V } Equivalent straight )inefor loss 43mn 38mn calculation,Sj = 115°C

lOA 12A Sc= BO°C

gOA 100A Sj = 25°C

40A's 50A's Sj=25°C,t=10ms

see table

2V

-3mV/K(typ.) Sj = -40to + 115°C

0.2V

3A

see table

20A/[!s

20 V IllS

5 V/[!S

115°C

-40to +115°C

-40to +150°C

2.0 K/W

approx.2mm

approx.2g

109

F

Sj = 115° C, 0.5 VDRM orO.5 VRRM

Peakvalue, tp;;:; 10[!s

Sj=115°C

Sj=115°C, Vmax. = 0.67 VDRM or VRRM

Sj = 115°C, Vmax. = 0.67 VDRM (di/dt)q = 0.53 IrRMS(I)A/ms

Loading with sinusoidal current, 360 0 angle of current flow and f= 40 Hzto 60 Hz

Anode l-anode2


In accordance with DIN 40 040

171

Triacs

3()

A

iT 26

) 22

lB

14

10

1

0 4 A

On-state characteristic curves, TX 0 10 ...

TX 010 ., 10

- I- -- "',-15'C

- 1--- "',-1:5'Ci

Mean value I

/ ~pper imlt value ~

/ r-l-

V / V

h

--' \0 1.4 1.B 1.1 1.6 3.0 3.4 V 3.B

On-state characteristic curves, TX 010 ... P

TX 010 P ., 10

I / (I .J._ ~.1;"C 1/ 1-

1/1

4

6

B

0

100 1 rnA 01

1 lro

100

ro

0

--,jo,"115"C / Mean value / '/ ~lmr~alue /1/ ./

I. / ~V

'/ V /

~ V. ,/

~ ~v 0.6 1.0 1.4 1.B

Temperature dependency of the gate trigger currents

TXD10 .'

\. '\

"'- -""- TX010 .. l TX010 .. KIH

" "" /;; TX010 .. H

r-.... '-...... 7f i'....

I--- r-r--r-::-

1.1 v 1.6 -V1

r--I----40 -10 10 40 60 BO 100 "C 110

--,jo,

172

i1

36 A 31

TXD10

On-state characteristic curves, TX 0 10 ... M

noto M ., 10

I I 1-1' V

11B

14

10

I--I-J - il)_1i,c

-- ,/",115°C :/ Mean vaill'/ /

/. 1/ I

VI

iG

!

16

11

.,./

V

~

-;:'/ IV'

/ /V / /. /" 1-/ ..... '/

V I~pper

imlt value-r--

o 0.6 1.0 1.4 1.B 1.1 1.6 V 3.0


-VI

rnA 10

TXC10 Dl011 3

5

Y

102 OJWI

5

, 10

5

llJOO 0.5 1.0

-40°C

1.5

lW

0.5W

::zi1l1W 15"C

1.0 -VG

1.5 V

On-state power dissipation characteristic curves (overcurrent range), mains operation 40 to 60 Hz, TX 0 10 ...

110 W

100

TX 010 ., jj l!

Pr90 ) BO

/ '/ / / /h '/

70

60

50

40

30

10

10

00 ~

/ '// / I._lBO', /~ '/

'i~::-:: //// /

~~ ~ // ~ ~ ;Y

~ V ~~:~ r, ; q=

p-10151015303540A45

-IrRMS

Triacs TXD10

Py

On-state power dissipation characteristic curves (overcurrent range), mains operation 40 to 60 Hz, TX D 10 ... M

80 ,------r-,---,---,--'-'--'T'-"~-,7r'7___,~_"_,14 w 70 r---t--+----t--j---t--;f-;f-h<j--,;'--j--j

0 11 W

100 Py 90

On-state power dissipation characteristic curves (overcurrent range), mains operation 40 to 60 Hz, TX D 10 ... P

TX 010 P .. 14

I;; 'i. /1/) '/

l:r---t-~~---t--t-~~~~+----t--j I 8

7

6

0

0 /,

V/,

/ ;,; 'j V/ V '/

40

30

0-1-~-1~:" 0 120" //, V,-

0 ~:~ M ~ 30"':';; ~ V

201--j--w~7L+-+- 0

~ -

~ V ' I." 0 -

10 r---b~QoL---t--j--+-- ~ I 'I '1-

20

10

0

6

2

8

4

0

-.... tp 1 5 ro _ W B m _ ~ a ~ ~A~

--fIRMS

On-state power dissipation characteristic curves, TX D 10 ... , nomogram for determination of max. rms on-state currents (limit values) for various cooling conditions, mains operation 40to 60 Hz

L IL V / V 2

l K l-'ll

~ / 1/ 1/ V

/' /'" 4-I-- I- IRMS

b( L V 5-1-- I-

/ ./ , 1/ V&: ~v

TX 010 ~ 13a 0

V /' /' / V/ '/ (.:::: ).·180"

/'/' V/ f/- /"'" 8 V~ V ~ ~fO"-

I-r--l

10-I-- ./ ,,~~:-I-r--V/ % V V ------ :~- ~ V V "30"

:%:: ~ :::-- I--~ /'" V /:::: ~ f:=-::: ~-

~ %:;: ~ 2 f-::: r-::: - I--~ 2" ~8-I--

~ ~ 100 80 60 40 20 00 10

{},-On-state power dissipation characteristic curves, TX D 10 ... M nomogram for determination of max. rms on-state currents (limit values) for various cooling conditions, mains operation 40 to 60 Hz

TXDlO M n

lK // V -'II

~~ /V / V

L' 4-- f- ' I." 1

).. . V/ ./ /' 5-- -

V ./ , /)< -/ / V V ./

6--

/' ~ t)'180",,-

1

8-- L D- r--r--/' ./ /'

-----'/: ,/ ./ V ~ ~120°

-/ ~ /' V V 10--~ 1:/ ,/ > 90"-f-1-- 8

--- 12 '" 60"

:%: ~ r..--::: :...:::: r::::.-f- 15--

h?2: V V lO"I-f-r--V ~- - 4

~ ~ ~ r:::::: --= -r- I-:::::: ~- .di ~ /' -

~ ~ 0 " 120 C 100 80 60 40 20 00 ro 12 14 A 16 I},_ ---lrRMS

173

I

Triacs TXD10

On-state power dissipation characteristic curves, TX 0 10 . .. P, nomogram for determination of max. rms on-state currents (limit values) for various cooling conditions, mains operation 40 to 60 Hz

TXOIO P n 20

/3~

V 4-

5-V 1/ V V V

6-

0 V 8-

/' '/ V "/ ~ v V

v __ 10-......- ~;-

~ ~ c..--:: t:::::: V f.---' ):...- t ~~ ~ ~ '-" :--

0 120 "C 100 80 60 40

0

5

5

5

0

5

0

65

11,-Permissible case temperature [)c

versus on-state current, mains operation 40 to 60 Hz

TX 010 010.,M.Ol(1 .. P.n

~ r;:::;: ~

I": f' f': Sinusoidal full wave "'- t--..

"'\ I' '\ i'-. t--..

I" f'." i'-. o f-i .. M I-r-p l-

15

f-~

f-~

I--

--

-

--

-

-

-

- 0 1 2 3 4 5 6 7 8 9 ro n u U MA. -ITRMS

~

~

f-

o 0

Temperature dependency ofthe holding currents

200 rX01Q,n

A

01\

" 10 K TXD10 .. l

TXD10 .. K 0

'" ~ J% TXD10 .. H

" ~ ~ I'--... 0

'r---.. -L --- r---r---.. ---I---.. = ~ 0

-40 -20 20 40 60 BO 100 "C 120 --11,

174

~~: ]RII!

T

k: ~ ~ t:% V

III!!!~

/

~ ~lBO";, / / r/ /

1~:, ~ r/ V 1/ 1/ ~ f-60"

30f)! ?< V V // >S V

V- /V 1

/'V 1% V': V V V

12 15 ----/mMs

Triac Series 2N6343A 2N6344A 2N6345A 12 AMPS RMS; VDRM up to 800 Volts

• 12 Amperes RMS • Blocking voltage up to 800 volts


• Glass passivated chip for maximum reliability



A 0.560 0.625 14.23 15.87 B 0.380 0.420 9.66 10.66 C 0.140 0.190 3.56 4.82 1 2 3--1 F 0.139 0.147 3.531 3.733 H

H 0.250 6.35 K J 0.014 0.022 0.35 0.56

~ K 0.500 0.502 12.70 14.27 ! ! ! N 0.190 0.210 4.83 5.33 w:Jl~ N -lL....J Q 0.100 0.120 2.54 3.04 S 0.020 0.055 0.51 1.39 1 MT 1

T 0.230 0.270 5.85 6.85 2 MT 2 3 Gate

W 0.027 0.035 0.68 0.89 4 MT 2

TO-220AB Catalog Number Rep. Peak Off-State Voltage.

VORM VRRM (Volts)

2N6343A 400 2N6344A 600 2N6345A 800

175

Triac


On State

Max. RMS on·state current

Max. peak one cycle 60HZ non

repetitive surge current

Max.I't capability for fusing

Switching


Max. thermal resistance Max. holding current


Thermal values



Off State


Critical rate of rise of commutation voltage

Triggering

Max. peak gate current

Max. required DC gate current

to trigger 25°C, Vo~ 12V

Note 1

Max. required DC gate voltage

to trigger (note 1)

Min. required DC gate voltage

to trigger (note 2)

Note 1

176

IT (AMS)

ITSM

I't

lOAM dvldt

Series 2N6343A 2N6344A 2N6345A

12Amps

120Amps

59A'S

1.75 Volts 2.0oCIW

40mA

75mA

ITM = 17 Amps

IT = 200mA, V supply = 12V

-40°C, IT= 200mA, V supply = 12V

-40°C to + 110°C

-40°C to + 150°C

2mA TJ = 110°C

5vlp.Sec. TJ = 25°C, Vmax = .67 VOAM

2.0A positive or negative gate

current, tp = 10p.Sec.

50mA MT2+,G+

75mA MT2+, G-

50mA MT2-,G-

75mA MT2-,G+

2.5volts 25°C, Vo~12V

0.2 volts 115°C, 0.5VORM. or

0.5VARM

Max. required gate trigger current (or voltage) is the lowest value

which will trigger all units under the conditions shown.

SCR's, Phase Control

Small Thyristors Series SSt C 12

Thyristors with shortturn-offtime for400Vto 750V; maximum mean on-state current (limit value) 2.5 A

Application: Deflection circuits in television receivers, regulation and control circuits in industrial and household elec-tronics

Case Plastic case TO 220 AB, the anode is connected to the mounting flange

Associated parts Matching plate C67067-A9000-C 166 Mica washer C67067 -A9000-C 165


Type Ordering code

BStC1226 C67048-A 1428-A 2 BStC1233 C67048-A 1428-A3 BStC1240 C67048-A 142B-A4 BStC1246 C67048-A 1428-A 5 BStC1250 C67048-A 1428-A 7


Maximum Maximum gate repetitive trigger current peak off-state or VD =6V reverse voltage So = 25°C So = -40°C VOAM• VARM IGT

400V 500V 600V 50mA SOmA 700V 750V

10 ~ _ 4

1,3

~ --I 5 08 '--- ! J~

0,4)(0.8

Dimensions in mm

Maximum Critical rate holding of rise of current off-state voltage So = 25°C 0.67 VDRM

IH So = 100°C (dv/dt)"

100mA 100V/fLS

Max. mean on-state currents hAV(I) or max, rms on-state currents hRMs(l) formains operation 40 to 60 Hz

Mounting Case ~/TAV ~/r/>..v ~"AV HfTAV .~1rRH5 temperature ,1,-180" ,&r 120· 00'

Chassis mounting 9, = 80a c 2,5A 2,lA 1.75 A 1.2A 4A

178

Small Thyristors Series BSt C 12

Main circuit limit values Secondary conditions

Maximum continuous off-state or reverse blocking current 1D,1R lmA 9j = 1000 C, at VORM, VRRM

Maximum on-state voltage VT 3.4V 9j = 25°C, IT = 7.5A

Threshold voltage VITO) 1.B5V } Equivalent straight line for loss cal-Slope resistance (T 134mn cuiation,9J = 100°C

Maximum mean on-state current hAVII) 2.5A 9c= BO° C, sinusoidal current, A. = lBO°

Maximum rms on-state current 1TRMSII) 4A

Surge on-state current hSMll1 50A 9j = 250 C} Sinusoidal half wave 35A 9j =100°C f=50Hz,VR=OV

i't value fi'dt 12.5A's 9 = 25°C\ 6 A's ~ = 1000C J t= 10ms, VR = OV


Maximum gate trigger current 1GT 50mA 8,= 25°C, Vo ~ 6V

Maximum gate trigger voltage VGT 2V 8,= 25°C

Temperature dependency of the gate trigger voltage aVGT -2.7mV/K 9j = -40°Cto +100°C

Maximum gate non-trigger voltage VGO 0.2V 9j = 1000 C, 0.5 VDRM Maximum permissible gate current 1GM 3A Peak value, tp~ lOlLS

Maximum negative gate voltage VGRM 10V Peak value


Maximum holding current 1H 100mA 9j = 25°C, Vo = 6V

latching current hAT 200mA 8,= 25°C, tgt ~ 100 I1s, 1G ~ 51GT

Delay time tgd 1.511S 9j = 25°C, 1G = 250 mA, diG/dt = 1 A/I1S

Critical rate of rise of on-state current (di/dt)cr 100A/l1s 9j = 100°C,O.67 VORM, diG/dt= 1 A/I1S

Critical rate of rise of off-state voltage (dv/dt)cr 100V/l1s 8, = 1000 C, 0.67 VORM

Turn-offtime tq 2Ol1s 9j = 100°C, VR ~ 100V

Thermal values

Maximum continuously permissible junction temperature .?jIll 100°C

Operating temperature range .?j -40to +100°C

Storage temperature range 9, -40to +150°C

Thermal resistance for constant current RthJC 2.6 K/W Calculated value

Mechanical values

leakage path approx.2mm Anode - cathode

Weight 2g

Vibration resistance 109 At 50 Hz, without heat sink

Humidity category F In accordance with DIN40040

179

Small Thyristors Series eSt C 12

'T

1

On-state characteristic curves

10 BStC12

'TT-j'iTT/I II II Mean ValUej I 1/ 8 '

II f- --~1"'100°C I

--{l1~25'CJ rr J 17Upper limit value

10

r7 Ii r7 17

" 17 J V I/.

'-'" ~ I-- [7 ~

, ,

Temperature dependency ofthe gate trigger currents (spread)

rnA 10 0

GI2

'e


rnA 2 C1211

2W ! 10 l x-+-

lW 5 0.5W

A 0.2W 1/

2~ f', 0.1W7

F-40'C 5F 25'C

10

100'C

II -/ , , 10

5

0 --.J 10 0 3 V

On-state power dissipation characteristic curves (overcurrent range), mains operation 40 to 60 Hz

e12 14 3 0 ./ /

lGT f-- 1--j- --J-. 1

or--.. I PT ~ 61-- .1 7 /

~AV ! 8 f':

0 " 0

f....

o t---+-

0 -40 -20

t-.... i"--t--,.

F= 1--;-. +-

20 40 60

i-t-t-

-80 100 120 'C

-{l,

On-state power dissipation characteristic curves,

I I--21--01--I--

16 I--I--

21--0 8

4

0 7

60' EErAV , "-::: 1200 ~ 8l!AV, 180 0 tv ElETAV , 1/ 180 0 f--&

/ W/ "AP.,

/.j ~ IdP'

/ /. 1// 1/

/fi /. W r/

1// r//

DC

/

/

9 A 10

-irAV

diagram for determination of max. mean on-state currents (limit values) for various cooling conditions, mains operation40 to 60 Hz

180

e 2 , t). l-f-~c.+T, I-l- K 5

lSoel l-f- I-l- Wj I/l~ f-- 30' f-- I--

1 I-- 60' ~ l-I-I-- 90', l-I- 8

If-- 120' I-- 180' 10

12 5

15

- 20 3

~jl 25 30

2 40 50

1 r J-

0 =t- ,- 1-LlI -1 __ 1-

~,\= 300 e! I--- 60' I-- 90' I--- 120'

~ 180°, -" DC

fll. -

1

I

N.

1 13 0 W 9

8

I

5

4

=l=MVC= i ;. r ~2

1

-.J o 0,5 to 15 2.0 2,5 3 0 3,5 A 4,0 110 ~IO 10 50 30 'C 10 0 0.5 to 1.5 2.0 2.5 3.0 3.5 4.0 4.5 A 5.0

--fTRMS

Small Thyristors

Permissible case temperature versus on-state current, mains operation 40to 60 Hz

105,--,--,--,--;::":-:' C.:.:."-,_-,_-,-_-::;'5

°C

90 ~~V 60"

85 ~~V.L---f~'-4d",",c--'1' ____ -+--+---j 1200

80 ~}.v-.-Jr"-',+--'~-"<'I--+-''''-+------1 100"

75 ~"'v --+---+4---+-'1-+--'\-+--+-"'>1 100"

700'-----o'::----o'---Ll,----o'--L-,L-L-,3L.O --,L_.u

-lAV

Series eSt C 12

181

Small Thyristors

Thyristors in plastic cases for400 to 800 V; maximum mean on-state current (limit value) 4 A and 6 A

Application Mainlyfor mains-commutated converters of all types, e.g. motor controls, switch applications, regulation and control circuits for industrial and house

Case hold electronics Plastic case TO 220 AB, the anode is connected to the mounting flange

Associated parts Match ing plate C67067 -A9000-C 166 Dimensions in mm

Series BSt C 10

-10

Mica washer C67067-A9000-C 165 System Silicon, fully diffused, glass passivated

.~ Case te~pera.ture -lS.OB I-- I -JL measUring pomt------- 0,4 x 0.8

Type Ordering code Maximum Maxi- Maximum Maximum Latching Critical rate repetitive mum gate trigger holding current of rise of peak off-state or mean current current flAT off-state reverse voltage on-state VD ;;:; 6V IH voltage VDRM , VRRM current

IrAV(I)

,9, ~ 25"C IGT

(dvldr)"

BStCl026 C6604S-A 1425-A 2 400V 4A 25 mA SOmA 160mA 50V/llS BStCl026M C6604S-A 1425-A 3 6A 25 mA SOmA 160mA 50V IllS

BSt C 1033 C6604S-A 1425-A4 500V 4A 25 mA 80mA 160mA 50V/llS BSt C 1033 M C6604S-A1425-A5 6A 25 mA 80mA 160mA 50V/llS

BStCl040 C6604S-A1425-A6 25 mA SOmA 160mA 50V/llS BSt C 1040 S2 C6704S-A 1425-A 29 1.5mA 10mA 20mA 5V/llS BStCl040S1 C67048-A 1425-A 25 3 mA 10mA 20mA 10V/llS BStCl040B C66048-A 1425-A 7 4A 5 mA 20mA 40mA 50 V IllS BStCl040C C6604B-A1425-AS 10 mA 50mA 100mA 100V/llS BSt C 1040 D C6604B-A1425-A9 600V 25 mA BOmA 160mA 100V/llS BSt C 1040 M C6604B-A1425-A 10 25 mA BOmA 160mA 50V/llS BSt C 1040 M S2 C6704B-A 1425-A 30 1.5mA 10mA 20mA 5 V IllS BStCl040MSl C6704B-A 1425-A 26 3 mA lOrnA 20mA 10V/llS BStCl040MB C6604B-A 1425-A 11 5 mA 20mA 40mA 50V/llS BStCl040MC C6604B-A1425-A 12 6A 10 mA 50mA 100mA 100V/llS BStCl040MD C6604B-A1425-A 13 25 mA BOmA 160mA 100V/llS

BStCl046 C6604B-A 1425-A 14 25 mA BOmA 160mA 50V/llS BSt C 1046 S2 C6704B-A 1425-A 31 1.5mA 10mA 20mA 5V/llS BStCl046S1 C6704B-A 1425-A 27 3 mA 10mA 20mA 10V/llS BStCl046B C6604B-AI425-A 15 4A 5 mA 20mA 40mA 50 V IllS BStCl046C C6604B-A1425-A 16 10 mA 50mA 100mA 1 OOV IllS BStCl046D C6604B-A1425-A 17 700V 25 mA SOmA 160mA 100V/llS BStCl046M C6604S-A1425-A IS 25 mA SOmA 160mA 50V/llS BStCl046MS2 C67048-A 1425-A 32 1.5mA 10mA 20mA 5 V IllS BStCl046MSl C6704S-A 1425-A 2S 3 mA 10mA 20mA 10V/llS BStCl046MB C6604S-A1425-A 19 6A 5 mA 20mA 40mA 50V/llS BStCl046MC C6604S-A 1425-A 20 10 mA 50mA 100mA 1 OOV IllS BStCl046MD C6604B-A 1425-A 21 25 mA SOmA 160mA 1 OOV IllS

BSt C 1053 C6604B-A 1425-A 22 SOOV 4A 25 mA SOmA 160mA 50V/IlS BStCl053M C6604S-A 1425-A 23 6A 25 mA SOmA 160mA 50 V IllS

Max. mean on-state currents hAV(1) or max. rms on-state currents hRMS(I) for mains operation 40 to 60 Hz

Type Case temperature ~rTW -=;ITAV I===i!TAV ~iTAV ~~hRM5

9, A·1BO~ iBO' '200 EO'

BSt C 10 .. S5°C 4A 3.SA 3.1 A 2.1 A 6.3A BStCl0 .. M S5°C 6A 5.7A 4.6A 3.2A 9.4A

182

Small Thyristors

Main circuit limit values Type

Maximum continuous off-state or reverse blocking current Io, IR

Maximum on-state voltage VT Threshold voltage l'!TO) Slope resistance rT

Max. mean on-state current hAV(I)

Max. rms on-state current hRMS(I)

Surge on-state current hSM(I)

i'tvalue Ji'dt


Maximum gate trigger current IGT Maximum gate trigger voltage VGT Temperature dependency of the gate trigger voltage aVGT

Maximum gate non-trigger voltage VGO Maximum permissible gate current IGM Maximum negative gate voltage VGRM

Dynamic values, switching behavior Maximum holding current IH Latching current ILAT

Delay time tgd

Critical rate of rise of on-state current (di/dt)er Critical rate of rise of off-state voltage (dv/dt)er

Turn-offtime tq

Thermal values

Maximum continuously permissible junction temperature 9i(1)

Operating temperature range 9; Storage temperature range

Thermal resistance for constant current

Mechanical values

Leakage path

Weight


Humiditycategory

RthJC

BStCl0 ... Cl0 .. M

O.4mA

2.94V 1.7SV

1.54V 1.06 V 9Smn 42mn

4A 6A

6.3A 9.4A

60A 95A 40A 60A

lSA's 45A's SA's lSA's

see table

2V

-3mV/K(typ.)

0.2V

5A

10V

see table

see table

1.5 [is

50A/[is

see table

50 [is (typ.)

+115°C

-40to +115°C

-40to +150°C

2.6K/W

approx.2mm

2g

109

F

Series eSt C 10

Secondary conditions

9j = 115° C, at VORM, VRRM

9j= 25° C, ir = 3 hAV(I)

} Equivalent straight line for loss calculation, 9; = 115°C

ge = 85 0 C, sinusoidal current, .1.= lS0°

9 = 25 0 CJ t= 10ms, j = 115° C l sinusoidal half wave,

I f= 50Hz, VR = OV

9j = 25 0 C} -10 III -OV 9; = 115°C t- ms, R-

9; = 25°C, Vo ~ 6V

9j = 25°C

9; = -40to +115°C

9; = 115°C,0.5 VORM

Peak value, tp ~ lOllS

Peak value

9;= 25°C, Vo = 6V

tgt ~ 100 [is.IG ~ 5 IGT, 9; = 25° C

9;= 25°C, IG = 250 mA, diG/dt = 1 A/[is

9; = 115°C,0.67 VDRM

9; = 115° C, 0.67 VDRM

9; = 115°C, VR ~ 100V

Calculated value

Anode - cathode

At 50 Hz, without heatsink

In accordance with DIN 40 040

183

Small Thyristors

On-state characteristic curves. eSt C 10 ...

15 .---r_....,.._~_.,..!£CT!'!.D,·!.,-_.,-_r--rV.,-/~1O

iI' ~f---+ -"j= 115"C'I-+-_h~_-L--I L L --" = 25"C/ Upper / 11'--

11--- Mean value j.jrTr.-+_+-.:::lim:::;i-,-t v",a::.:lu.;"e r-<--+--I

10'

40

0

184

Input characteristic curves. triggering ranges and

--v,

curves of constant power dissipation

"

2W I-lW

O,5W

/-j( .TW

~OoC

soc '-1. ,

0,4 0.8 1.2 1.6 2.0 2.4 2.8 3,2 V

--v, On-state power dissipation characteristic curves (overcurrent range) mains operation 40 to 60 Hz. BSt C 10 ...

Cl0,n ,. I / AI! /

I---~v r7 III II / I--- :kv f9 jV/ / 120' I--- el!!v If--~ / DC I--- 180[

a:!'v /~ V V I--- 180'

7i ~ 7

~ ~ ~ ~

10 15 20 25 --ITAv

Series BSt C 10

On-state characteristic curves. eSt C 10 .. M

Cl0 M 10 2 ,.

1 1 1 I ,IV

8f-- --",=125"C V 77 --",= 25"C Me~n v~lue : jI //

4

0

6

2

0

if VI

/. I/, 1/ / 1/ // / L/

/ '/~ /" l/ k:::: i/ , ......

0,6 1.0 1.2 1.4


elO,n

AI'" 50

m

)"'40

"" 0 "'-.. ~

1...1 I1p~er imit v,alue-

I

1.6 1.8 V 2,0 --VI

01'--.-r--- 1'-r---t--.. C10 .. C I--t--i-- C1ite-

10

0 -40 -20 20 40 60 80 100 "C 120 --",

On-state power dissipation characteristic curves (overcurrent range) mains operation 40 to 60 Hz, BSt C 10,. M

80..--,--,--,-rrn'T""7-'--'''--';''

P, W

1 60

40

10 15 20 25 3035A40 --frAY

Small Thyristors Series BSt C 10

On-state power dissipation characteristic curves, BSt C 10 ... , diagram for determination of max. mean on-state currents (limit values) for various cooling conditions, mains operation 40 to 60 Hz

2 I / II /1/

)-=15"! / 30'/ 60' 90"/ / 1/180' RthCAt-.1r a I / / 1//Yi20' !1

8 I / // II I / /1 f/ / I 1//// 1/ 6 /1 V// - -- I-. \-- -I:/' 4

j '/V//' ~jJV_ l?' 71 w ). 1- I#"A% /' 2 /~ ~ I:::::: r

017 ~

Cl.o

K /5

I~~ Is

1/8-

V 10

V 12

v 15

V Vv 20 V V 25 V k ~l-- ~g !:::: 1:== p+- 50 ~

l/

I ).-30',1/ 6o'l9ff/ A80'

7 77 120/"

/ "1 w o 1

1/ I 1/// /oc II '/

J 11/ / -, 'til 77, 7,1 ~r7

~--ti-~ ). 1-I r-i o

1.0 2.0 3.0 4.0 A 5.0 110 'C 90 70 50 30 10 0 1.0 2.0 3.0 4.0 5.0 A 6.0

--fTAV 11,-- --flAY

On-state power dissipation characteristic curves, BSt C 10 .. M, diagram for determination of max. mean on-state currents (limit values) for various cooling conditions, mains operation 40 to 60 Hz

CIO M .. II II / I I I I

). _15',1/30'/ 60'/90 'I /i80' R'hCA+.1r a I 1 III "/ 20' 1 I II 1/ II

II / I '/1 -- I- I- r- -I-' V 71/ rI// I VV / I~V V V

4 .II W' ~jJV_ tI i/ II~ ~ ~~ "'-:1--:::: ).r I-2 tr, I:::::

I' jiiliii""

K 5

IVY 7 6

/ IV 8

V 10

/ 12

V 15

V 20 -...... 25 30

/~ f- 40

F- 50 " "7

V I )._30',1! 60"790"11

/ / '/ / I /

IA' 1

./18Q' / 120"% 1

" 2 W

/OC

/1/ / 77J. 7V

7 ~ 7 II ;,; ~/ I7$Pr

~ -- .-';-li?"i ). 1-

I r 1

7AB110'C90 70 50 30100 o

7 A 8

--ITA,I/ 11,--

Permissible case temperature, BSt C 10. '" versus on-state current, mains operation 40 to 60 Hz

0

O~ '\ ~

100 1\" ~v .\ I-sO" '\-Of--~V

120' I- eI!:." .,.-/

01-180' f--~AV /'

1800 o~-7

S 5 o

C10 ..

!"'~ ." ..........

P\. ~ ..........

~ ~ ,<DC

\/ K '" ~ 1 I I I I

15

1 I I

7 A B --frAY

--flAY

Permissible case temperature, BSt C 10 .. M, versus on-state current, mains operation 40 to 60 Hz

12

II 'C

r 0

O~ ~ ~

100 '\

~V r- --sO"

o-~v:;;

7

6

_1200

/i!!v 0- 1800 _~AV7

o 1800

5 o

10,,,M.n

;:-..... ~ ~ ...... t-...

~ 1'-.... X '\ ~ ~

V '\. ~ / ~ .-/' '\ 1 '1

I I I I

15

DC

'-.... -....;;;,.,

'I I I

9 A 10 --TlAv

185

Small Thyristors

Transient thermal resistances for constant current and pulse current 40 to 60 Hz

2

1

o

4 .r

JI W

1 3

2

CIO .. akv 61r. ~v 120' ~ _f-'"' ~v ;:-lBO' ~ ~ ~AV lBO' i~ ~

--V .-0 -"...

DC --10 J 10 1 10 I

Analytical function for dc:

Zi.h)JC = ir; (1 -e-f)

r, 1]

;= 1


CIO ..

\ 1"'- ~tfJ \ '" ~ "-...

" ...........

16

-----

l()O S 101

--I

I

~jJV "-.. -1 I.

I r 1'1 ....... r-- -r--. --

30 120 0 150 ,I 180 --I.

186

150 rnA

100

50

0

Series BSt C 10

K/W ms

Temperature dependency of the holding currents

elO n

~ "",

"- ~ I'-.

I-......... .............. Cl0 .. D

.............. ---------Cl0 .. C

---- ----- t-- Cl0 .. 8

............. I'-

-40 -20 20 40 60 eo 100 oc 120 --11,

Silicon Controlled Rectifiers 12 Amps RMS; VDRM and VRRM up to 1200 Volts

[J 16 Amperes RM8 c:J Industry standard TO-220AB package [J Blocking voltage up to 1200 volts [J Glass passivated chip I!I Available without anode lead for increased

creepage path (add "83" to part number)

Dim_ Inches Millimeter


A 0.560 0.625 14.23 15.87 B 0.380 0.420 9.66 10.66 C 0.140 0.190 3.56 4.82 F 0.139 0.147 3.531 3.733 H 0.250 6.35 J 0.014 0.022 0.35 0.56 K 0.500 0.502 12.70 14.27 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 8 0.020 0.055 0.51 1.39 T 0.230 0.270 5.85 6.85 W 0.027 0.035 0.68 0.89

Type Maximum Maximum Maximum repetitive gate trigger holding peak off-state current current voltage VD~6V 'H VDRM,VRRM TJ =25°C

Note 1 IGT

B8tD1666M 10mA 50mA B8tD1666N 1000V 20mA 80mA B8tD1666P 50mA 150mA

B8tD1680M 10mA 50mA B8tD1680N 1200V 20mA 80mA B8tD1680P 50mA 150mA

Latching current

60mA 100mA 200mA

60mA 100mA 200mA

Series eSt D 16


\

w~l- N 1 Cathode 2 Anode 3 Gate 4 Anode

T0220AB

Critical rate of rise of off-state voltage dv/dt

50 VII's 100 VII'S 200 VII'S

50 VII's 100 VII'S 200 VII'S

Note 1.: Add "83" to part number to specify no anode lead for increased

creepage path. Example: B8tD1680M83.

187

Silicon Controlled Rectifiers


On State


Max. Peak one cycle 60 Hz non



Switching

ITIRMS)

Critical rate of rise of on-state current di/dt

Max. peak on-state voltage in either

direction


Thermal values



Max. thermal resistance

Blocking


Critical rate of rise of off-state voltage

Triggering

Max. gate voltage to trigger

Max. gate current to trigger


Max. negative gate voltage

Max. peak gate voltage

Max. peak gate power

Average gate power

Mechanical values Leakage path· Weight Vibration resistance Humidity category

IRRM

dv/dt

VGT

IGT

IGM

VGM

VGM

P GM

PG(AV)

12Amps

100 Amps

40A'S

100A/I"Sec.

1.98 Volts

see table

Series BSt D 16

TJ = 115°C

TJ =115°C,t=8.3ms

ITM = 22.5 Amps

Vo=6V

-40 0 Cto + 115°C

- 40°C to + 150°C 2°C/W

2.5mA

see table

2V

see table

5A

10.0volts

5.0 volts

5.0W

. 5W

approx.2mm approx. 2 g 10 g F

TJ = 115°C and VORM

TJ = 115°C, .67 VORM

tp = 10 I"Sec. Forward

Reverse

t = 1OI"Sec .

anode-cathode

at 50 Hz without heatsink in accordance with DI N40 040

• Also available without anode lead for increased creepage path -Add S3 to part number.

188

Small Thyristors Series eSt D 10

Thyristors in plastic cases for 400 V to 800 V; maximum mean on-state current (limit value) BA and 10 A

Application Mainlyfor mains-commutated converters of all types, e.g. motor controls, switch applications, regulation and control circuits for industrial and household electronics

Case Plastic case TO 220 AB, the anode is connected to the mounting flange

Associated parts Matching plate C67067-A9000-C 166 Dimensions in mm - c _ A

Mica washer C67067-A9000-C 165 System Silicon, fully diffused, glass passivated

Case temperature ~ 5.08 ~G I measuring point -------=-'-----

Type Ordering code Maximum repe- Maxi- Maximum Maximum Latching titive peak off- mum gate trigger holding current state or reverse mean current current IlAT voltage on-state VD ",6V IH VDRM • VRRM current 9; =25'C

frAVII) IGT

BSt 0 1026 C6604B-A 1420-A 2 400V SA 25 mA SOmA 100mA BStOl026M C6604S-A 1420-A 6 lOA 25 mA SOmA 100mA

BSt 0 1033 C6604B-A1420-A3 500V SA 25 mA BOmA 100mA BStOl033M C6604B-A 1420-A 7 lOA 25 mA SOmA 100mA

BSt 0 1040 C6604B-A 1420-A4 SA 25 mA BOmA 100mA BStOl040S2 C6704B-A1420-A31 1.5mA 10mA 20mA BStOl040S1 C6704B-A1420-A27 3 mA 10mA 20mA BSt 01040 B C6604B-A1420-A 10 5 mA 20mA 30mA BStOl040C C6604B-A1420-A 14 10 mA 50mA 60mA BStOl0400 C6604B-A1420-A lB 600V 25 mA BOmA 100mA BStOl040M C6604B-A1420-AB lOA 25 mA BOmA 100mA BStOl040MS2 C6704B-A 1420-A 32 1.5mA 10mA 20mA BStOl040MSl C6704B-A 1420-A 29 3 mA 10mA 20mA BStOl040MB C6604B-A1420-A 12 5 mA 20mA 30mA BStOl040MC C6604B-A1420-A 16 10 mA 50mA 60mA BSt 0 1040 MO C6604B-A 1420-A 20 25 mA BOmA 100mA

BSt 0 1046 C6604B-A1420-A5 BA 25 mA BOmA 100mA BSt 01046 S 2 C6704B-A 1420-A 33 1.5mA 10mA 20mA BSt 0 1046 S 1 C6704B-A 1420-A 24 3 mA 10mA 20mA BSt 0 1046 B C6604B-A 1420-A 11 5 mA 20mA 30mA BStOl046C C6604B-A1420-A 15 10 mA 50mA 60mA BSt 0 1046 0 C6604B-A1420-A 19 700V 25 mA BOmA 100mA BSt 0 1046 M C6604B-A 1420-A 9 lOA 25 mA BOmA 100mA BStOl046MS2 C6704B-A 1420-A 34 1.5mA 10mA 20mA BStOl046MSl C6704B-A 1420-A 30 3 mA 10mA 20mA BStOl046MB C6604B-A1420-A 13 5 mA 20mA 30mA BStOl046MC C6604B-A 1420-A 17 10 mA 50mA 60mA BStOl046MO C6604B-A1420-A21 25 mA BOmA 100mA

BSt 0 1053 C6604B-A 1420-A 25 BOOV BA 25 mA BOmA 100mA BSt 0 1053 M C6604B-A 1420-A26 lOA 25 mA BOmA 100mA

Critical rate olrise of off-state voltage (dv/dt)"

50Vills 50 V IllS 50V/us 50 V IllS

50V/llS 5 V IllS

10V/llS 50V/lls

100V/lls 200 V IllS

50V/lls 5 V Ills

10V/llS 50V/llS

100 V IllS 200V/llS

50V/lls 5V/lls

10V/Ils 50V/llS

100V/llS 200V/llS

50V/lls 5 V Ills

10V/lls 50V/lls

1 OOV Ills 200 V Ills

50V/llS 50V/llS

Max. mean on-state currents hAV(I) or max. rms on-state currents IrRMS(I) for mains operation 4Oto 60 Hz

Type Case P==!/TA.V ~lTAV .~/TRI,\s temperature ~rTW I====i'TAV

9, ~-180" 1." 120· w'

BSt 0 10 ... B5°C BA 7.BA 6.5A 4.7A 12.5A BStOl0 .. M B5°C lOA 9.BA B.l A 5.7A 16.0A

189

Small Thyristors

Main circuit limit values Type

Maximum continuous off-state or reverse blocking current lD,lR Maximum on-state voltage VT Threshold voltage ltjTO) Slope resistance rT Max. mean on-state current hAV(I)

Max. rms on-state current hRMS(I) Surge on-state current hSM(I)

i'tvalue fPdt


Maximum gate trigger current lGT Maximum gate trigger voltage VGT Temperature dependency of the gate trjgger voltage aVGT Maximum gate non-trigger voltage VGD Maximum permissible gate current lGM Maximum negative gate voltage VGRM


Maximum holding current lH Latching current lLAT

Delay time tgd

Critical rate of rise of on-state (di/dt)er current

Critical rate of rise of off-state voltage (dv/dt)er

Turn-offtime tq

Thermal values

Maximum continuously permissible

junction temperature 9j(1)

Operating temperature range Bj


Thermal resistance for constant current

Mechanical values

Leakage path

Weight


Humidity category

190

RthJC

8StOl0 ... 0l0 .. M

0.4mA

1.8V 1.46V

1.18V 0.85V 25mQ 20mQ

8A lOA

12.5A 16A

130A 160A 90A 110A

85A's 130A's 40A's 60A's

see table

2.0V

-3mV/K(typ.)

0.2V

5A

10V

see table

see table

1.5 (.Is

100A/lls

see table

50115 (typ.)

+ 115°C

-40to +115°C

-40to +150°C

2.0K/W

approx.2mm

2g

109 F

Series SSt 0 10


9j = 115°C,atVDRM, VRRM

9j = 25° C, ir = 3 hAV(I)

} Equivalentstraight line for loss calculation,9j = 115° C

ge = 85°C, sinusoidal current, A = 180°

9j = 25° C} Sinusoidal half wave, 9j = 115°C f= 50Hz, VR = OV

9- = 250C} ~ = 1150C t= 10ms, VR = OV

9j= 25°C, VD;;;; 6V

Bj= 25°C

9j= -40to+115°C

9j = 115°C,O.5 VDRM

Peak value, tp ;;; 10 (.Is

Peak value

Bj = 25°C, VD = 6V

Bj=25°C tgt ;;;; 100 (.Is, IG ;;;; 5IGT 9j = 25°C, lG = 250 mA, diG/dt = 1 A/(.Is

9j = 115°C,O.67 VDRM, diG/dt = 1 A/Ils

9j = 115°C,O.67 VDRM Bj = 115°C, VR;;;; 100V

Calculated value

Anode - cathode


In accordance with 0lN40040

Small Thyristors

On-state characteristic curves, eSt D 10 ...

010 !'I 8

II r-- -~,=125"C

r- - --~,- 15"C I, 0 Mean value 1/ 6

I 1-2

I. 8 / " 'j

I 4 / / j

0 --0.6 0,8 10 12 14

Input characteristic curves, triggering ranges and

10

II

II VI

j,

~~r~alue I 'I

,--r--

16 1,8 V 10 --VT

curves of constant power dissipation

.A 10'

j'lO' 5

f--- t-.-

2W -lW

-- -O.5W

a,2IN

L2,I; _40 0 (

s·c :,;""'C

---M U U U u a u uv

--v,

On-state power dissipation characteristic curves (overcurrent range), mains operation 40to 60 Hz, BSt D 10 ...

010 ." 14

I 'I / ~v II I, '/

0r-60" I'--- (I, / r-~V

120' "I /; Or-~v -I V// f-180;

Y /.%V 6E!AV 0r-1BO'

'A w= V 0

r~ V ~ V

./ 10 20

t./ / / DC

30 40 --lTAV

50

Series BSt D 10

On-state characteristic curves, eSt D 10 .. M

3 A

iT 3 :r--r- ~J,U"C 1 :

010 M ," 10

Mean value :/ V j 1/ B --if," 25"C

7.1- ~pner 4

l/;) V Imlt value_ -

0

/, V/ 6

2 / '4. 8

y:; / 4

(/ /;'1

0 h :Y:: ~" 0,6 0,8 1.0 12 16 V 18

40 mA

lOT

r 3 0

0

0

o


010 ,"

~

"'" ~ 010,,0

......... ..............

.............

---- 01O,.C -r--- 010,,8 t--

--VT

-........ -......

--40 -20 20 40 60 so 100 "C 120

60

40

0

-_if,

On-state power dissipation characteristic curves (overcurrent range), mains operation 40 to 60 Hz, BSt D 10 .. M

010 M n 14

III V ~v / 1/ rl 1/

I-- 60' "'- / rJ. / I--~v 120' "'- :II V DC

I--~v r 'V/ r- 1BO; ~ to / 6E!AV

1--180' 1-~ V ./

V. P'/ h ~

~ ~

10 20 30 40 50 A 60 --ITA'I

191

Small Thyristors Series BSt D 10

IS

On-state power dissipation characteristic curves, BSt D 10 ... , diagram for determination of max. mean on-state currents (limit values) for various cooling conditions, mains operation 40 to 60 Hz

On-state power dissipation characteristic curves, BSt D 10 .. M, diagram for determination of max. mean on-state currents (limit values) for various cooling conditions, mains operation 40 to 60 Hz

010 M n 1

1~ I 07 c.i.1s '-=15°el 30° 60° 9()0 I 1'180° RlhCA+Llr

1 / )<120° 6 / / //

I /1/

A.-30oel 60°

I I I

I I

~or /. 1/ / 1/

/

1l 5 W l

';:180° 1200/ 1

/ r"DC

1

j II I // 8 // / II

,.-" 10 _. -t-. 'II ./

/ /. / / '/L - - -- ._- f-, 12 I '/~

I V// I / '/

~jJ~ '0 V/

~--r'l-'/$ hV- /: ,.. __ 25

/ug. II. ,,- ). 1-

~~ y- I--:::: ;;.- 30 ~ ,-

T j- 40 ). T-I -/I 50 I

1/ 50 .1/ lOA12"0"C9() 70 50 30 100 10 A 12

--fTAv --llAV 1}A ----

Permissible case temperature, BSt D 10 ... , versus on-state current, mains operation 40to 60 Hz

Dro ." 120 "c l 110 ~ III:,.

" ~" r\ ~ ;:--..

192

100 ~v

-60" 9() -~v/

_120° e/!!v

-180°

-EE!'v 80

70

65 o

180°

I'\. V

l'x /'

V

~ ""-"- ~ ~ ./" \, "- DC

----" I'\. '1 I I

10 12 A 15

Permissible case temperature, BSt D 10 .. M, versus on-state current, mains operation 40to 60 Hz

120

I}c "c I"'I~

1 "0 10~t---.

100

I-~v V 60"

90 I-~v 1- 1200 ~'vV

1-1800

'-EE!'v 80

70

65 o

1800

"

010 M ." 15

" "", " VI" 1\ VI'\

vt'\ V

" ~ " DC

" " '1 I I

10 12 14 16 A 18 --frAY

Small Thyristors

Transient thermal resistances for constant current and pulse current40 to 60 Hz

DID ." 16

~v I 60" I ~v I V 120'

,

2.0 tt!v -- / 1800 ~ ...;.. ~AY >- I

~

lSOO i

V "> I

----1.0

/' ! -- DC i 0.5

o I 10 l 10 ' 10 I 100 S 101

Analytical function for dc:

r; T;


.0 2 K

dr Vi

)' .5

\ \.

\

O~~jJ~ .5~ T

L i i

30 50

DID ."

I I

~-B I. T

""-.........

t--..

I'-.... .....

...... t--

90 120

--I

I-

0 150 el 180

--i.

Series BSt D 10

K/W ms

Temperature dependency ofthe holding currents

�5or----,----r--,--'DT"0."-" -,----,---r---, A

~·~0-~20~~~-+.20~-4~0-~5~0-~8~0-~IOO~~~,20 --/},

193

Silicon Controlled Rectifiers 12 Amps RMS; VORM and VRRI.1 up to 800 Volts

• 12 Amperes RMS • Industry standard TO·220AB package • Blocking voltage up to 800 volts



A 0.560 0.625 14.23 15.87 B 0.380 0.420 9.66 10.66 C 0.140 0.190 3.56 4.82 F 0.139 0.147 3.531 3.733 H 0.250 6.35 J 0.014 0.022 0.35 0.56 K 0.500 0.502 12.70 14.27 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 S 0.020 0.055 0.51 1.39 T 0.230 0.270 5.85 6.85 W 0.027 0.035 0.68 0.89

Rep. Peak Off·State Voltage. Voltage, VORM Tc =400to + 100°C

Type

2N6397 400 Volts 2N6398 600 Volts 2N6399 800 Volts

194

Series 2N6397 2N6398 2N6399


\

H

w~l~ N

1 Cathode 2 Anode 3 Gate 4 Anode

TO 220AB

K

~ ...lJ

Silicon Controlled Rectifiers Series 2N6397 2N6398 2N6399


On State

Max. RMS on-state current IT (RMS) 12Amps Te90°C

Max. peak one cycle 60 Hz non-

repetitive surge current ITSM 100Amps TJ + 125°C, TJ = 125°C

Max.I't capability for fusing I't 40A'S

Max. forward leakage current IORM 2mA TJ =125°C

Switching

Max. peak on-state voltage VTM 2.2V ITM = 24Amps

Max. holding current IH 40mA 25°C, Vo = 12Vdc

Max. holding current IH 100mA -40°C

Thermal values

Operating junction temp range TJ - 40°C to + 125°C

Storage temperature range Tstg - 40°C to + 150°C

Max. thermal resistance RSJC 2.0 oC/W

Off State

Max. leakage current IRRM 2mA TJ = 125°C

Critical rate of rise of dv/dt 5v/p.Sec. TJ = 125°C off-state voltage

Triggering

Max. gate voltage to trigger VGT 1.5V

Max. peak gate current IGM 2.0A

Max. gate current to trigger IGT 30mA

Max. peak gate power P GM 20W

Average gate power PG(AV) .5W

195

Silicon Controlled Rectifiers 16 Amps RMS; VORM and VRRM up to 800 Volts

• 16 Amperes RMS • Industry standard TO·220AB package • Blocking voltage up to 800 volts



A 0.560 0.625 14.23 15.87 B 0.380 0.420 9.66 10.66 C 0.140 0.190 3.56 4.82 F 0.139 0.147 3.531 3.733 H 0.250 6.35 J 0.014 0.022 0.35 0.56 K 0.500 0.502 12.70 14.27 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 S 0.020 0.055 0.51 1.39 T 0.230 0.270 5.85 6.85 W 0.027 0.035 0.68 0.89

Rep. Peak Off·State Voltage. Voltage, VORM Tc =40010 + 100°C

Type

2N6403 400 Volls 2N6404 600Volls 2N6405 800Volls

196

Series 2N6403 2N6404 2N6405


\

w~l~ N

1 Cathode 2 Anode 3 Gate 4 Anode

TO 220AB

K

~

Silicon Controlled Rectifiers (Tc=25"C unless otherwise specified)


On State


Max. peak one cycle 60 Hz non



Max. forward leakage current

Switching




Thermal values



Max. thermal resistance

Off State



Triggering





Average gate power

IT(RMS)

IRRM

dv/dt

VGT IGM

IGT

P GM

PG(AV)

Series 2N6403 2N6403 2N6405

16Amps

160Amps

100A'S

2mA

1.7 V

40mA

60mA

TJ = 125°C

t=8.3 ms

TJ = 125°C

ITM = 32 Amps

- 40°C to + 125°C

- 40°C to + 150°C 1.5°C/W

2mA

50v/!-,Sec.

2.5V

2.0A

30mA

20W

.5W

TJ = 125°C

TJ = 125°C

197

Silicon Controlled Rectifiers 63 Amps RMS; VDRM and VRRM up to 1200 Volts

• High dv/dt - 200 V/!,sec. • 1000 Amperes surge current capability • Economical for medium power applications • Compact TO·208AC package



A B .677 .683 17.19 17.34 C .755 19.17 D 1.075 1.105 27.30 28.06 E .427 .447 10.84 11.35 F .135 .140 3.42 3.55 G .513 13.03 H .220 .249 5.58 6.32 J .200 .300 5.08 7.62 K .120 3.05 M .590 14.98 N .065 .085 1.65 2.15 P .145 .155 3.68 3.93 R .061 .065 1.54 1.65 S .025 .030 .64 .76

Note 1: %-28 UNF-2A Note2: Full thread within 2'12 threads

Catalog Forward & Reverse Number Reverse Transient

Repetitive Blocking Blocking

40C10B 100 200 40C20B 200 300 40C40B 400 500 40C60B 600 700 40C80B 800 900 40C100B 1000 1100 40C120B 1200 1300

Note 1:

To specify dv/dt other than 200V/!'sec, enter appropriate letter in place of "G".

K ;a: 300Vl!,sec H ;a: 500Vl!,sec

198

2

Dia.

Dia.

Series 40C

TO·208AC (TO-as)

Silicon Controlled Rectifiers Series 40C (Note 1)


Forward Conducting Max. RMS on-state current 'T (RMS) 63 Amps Tc = 102°C Max. average on-state cur. IT(AV) 40 Amps Tc = 102°C Max. peak on-state voltage VTM 3.2 Volts 'TM = 500 A (peak) Max. holding current 'H 200 rnA Max peak one cycle ITSM 1000A Tc = 102°C, 60 Hz surge current

Max.I't capability for fusing I't 4100A'S t=8.3ms

Switching Critical rate of rise of on-state current dildt 100A/l'sec. TJ = 125°C (note 2)

Typical delay time (note 2) Typical circuit com mutated

turn-off time (note 3)

Thermal values Maximum thermal resistance Operating Junction temp range Storage temperature range

Blocking Max. leakage current Max. reverse leakage Critical rate of rise of off-state voltage

Triggering Max. gate voltage to trigger Max nontriggering gate voltage Max. gate current to trigger Max. peak gate power Average gate power Max. peak gate current Max. peak gate voltage (forward) Max. peak gate voltage (reverse)


Header Weight Mounting Torque Dimensions

Note 1 Note 2

Note3

td 3.0I'sec.

tq IOOl'sec. TJ = 125°C

RSJC 0.35°CIW TJ - 40°C to + 125°C Tstg - 40°C to + 150°C

IORM 6mA TJ = 125°C and VORM

IRRM 6mA TJ = 125°C andVRRM

dv/dt 200V/l'sec. TJ = 125°C

VGT 3.0V VGD 0.25V TJ = 125°C

IGT 100mA P GM lOW

PG(AV) 1.0W tp= IOl'sec.

IGM 3.0A VGM 20V VGM 10V

High strength copper stud and base with a 1/4-28 UNF 2A thread for through mounting on a heat sink. Tin plating of base prevents corrosion. Glass to metal construction Approximately .635 ounce (18.0 grams) 30 in. Ibs. max In accordance with (TO-65) TO-208AC outline

Tc = 25°C unless otherwise noted 'TM = 50A, Vo = VORM ' VGT= 12Vopen circuit, 20 ohm-O.ll'sec. rise time 'TM = 50A, di/dt = 5A/l'sec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/",sec., linear to rated VORM' VGT = OV

199



130

a' 120 r--~

'" ....... ~ ..... " ........ ~

.600

*300

10 20

Average On-State Current - Amperes


130

I;' E

I E ~ ~ u E E ·x ~

200

110

100

90

0 "3D

0 10 20 40 Average On-State Current - Amperes

Jil ~

~ Conduction

"""- ~ II ......

·,~OO "goo II "180

30 40

360'

~!Ffd I•· . _I

50 60 70

0


70

~ 60

50 c 0

c. 40 'ill i5 30

~ Ii. 20 E E 10 ·x ~

10 20 Average On-State Current - Amperes


90

Series40C

Conduction angle

30 40

80~---+----4----+----+----+· ~

~ 70

c 60 0

"- 50 .~

i5 40

J 30

E 20

E ·x ~

20 30 40 Average On-State Current - Amperes

!~I Conduction angle

50 60 70



o. 7

o. 6

5

3

g O.

~~ 0.4

~~ O. "'w ~:4 ~u o. >-£ cc (l) 0 o.

2

1 "@i3 ~§ >-~ a

V /

L----V

.001 01 0.1 Pulse Duration-Seconds

Figure 6

/'

1.0 10

Maximum nonrepetitive surge current at rated load conditions

1100

1000

~ 900

~ 800 1 ~ 700 u

~ 600

2 o 500

~ 400

f"-~

l"""

f=60H~ TJ=1250 C

t--j-.

t--t-

100

t-

1 6 8 10 20 40 6080100 Number of Cycles

Series 40C

Figure 7 Maximum fOlWard on-state characteristics

1000

~ 100

11. E

~ ~ u

* <1 c

0 , 0

~ E ~

10

a

0

a

a

25°C ::;...-~

1/ 125OC-+--

J

• /I

a 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Instantaneous On-State Voltage - Volts

Figure 8 Typical fOlWard on-state characteristics

10000

a 25°C

/ V 1250 C _ f-- f--

l-V

a I"

/, a III

1.0 2.0 3.0 4.0 5.0 Instantaneous On-State Voltage - Volts

201

I

Silicon Controlled Rectifiers Series 050 80 AMPS RMS; VDRM and VRRM up to 1200 Volts

• High dv/dt - 200 V/f'sec. • 1200 Amperes surge current capability • Economical for medium power applications • Compact TO-208AC package

M~

BClee Lcj



A 8 .677 .683 17.19 17.34 C .755 19.17 D 1.075 1.105 27.30 28.06 E .427 .447 10.84 11.35 F .135 .140 3.42 3.55 G .513 13.03 H .220 .249 5.58 6.32 2 J .200 .300 5.08 7.62 K .120 3.05 M . 590 14.98 Dia . N .065 .085 1.65 2.15 P . 145 .155 3.68 3.93 Dia . R .061 .065 1.54 1.65 S .025 .030 .64 .76

Note 1: %-28UNF-2A Note2: Full thread within 2% threads



05001GOF 100 200 05002GOF 200 300 05004GOF 400 500 05006GOF 600 700 05008GOF 800 900 05010GOF 1000 1100 05012GOF 1200 1300

Note 1:

To specify dv/dt other than 200Vlp.sec, enter appropriate letter in place of "G".

K ~ 300V/p.sec H ~ 500V/p.sec

202

Silicon Controlled Rectifers (Note 1)

Series 050


Forward Conducting Max. RMS on-state current IT(RMs) 80Amps Tc = 94°C Max. average on-state cur. IT(AV) 50Amps Tc = 94°C Max. peak on-state voltage VTM 2.55 Volts 'TM = 500 A (peak) Max. holding current 'H 200mA Max peak one cycle ITSM 1200A Tc = 94°C, 60 Hz surge current

Max.I't capability for fusing I't 6000A'S t=8.3ms

Switching Critical rate of rise of on-state current di/dt 100A/"sec. TJ = 125°C (note 2)

Typical delay time (note 2) Typical circuit commutated


Thermal values Maximum thermal resistance Operating junction temp range Storage temperature range





Note 1 Note2

Note3

td 3.0 "sec. tq 100 "sec. TJ=125°C

RSJC 0.35°CIW TJ - 40°C to + 125°C Tstg - 40°C to + 150°C


'RRM 6mA TJ = 125°C andVRRM

dv/dt 200V/"sec. TJ = 125°C

VGT 3.0V VGO 0.25V TJ=125°C

IGT 100mA P GM 10W

PG(AV) 1.0W tp = 10 "sec.


High strength copper stud and base with a 114-28 UNF 2A thread for through mounting on a heat sink. Tin plating of base prevents corrosion. Glass to metal construction. Approximately .635 ounce (18.0 grams) 30 in. Ibs. max In accordance with (TO-65) TO-208AC outline

To = 25°C unless otherwise noted 'TM = 50A, Vo = VORM , VGT = 12V open circuit, 20 ohm-0.1"sec. rise time 'TM = 50A, di/dt = 5A1"sec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/"sec., linear to rated VORM ' VGT = OV

203

Silicon Controlled Rectifers


13 0

12 5 ....... ~ Jil ~~ ~ ~ ~

"\ " ~ ~ Conduction angle

5 r-..;:: "'-5

...... 1'-..

0 I 5

*3pO "600 +900 ·1200 *1800

10 20 30 Average On·State Current· Amperes


13

12

u 12

5......,.. 0

~ '1 ~11

5

0

l105 ~100

~ : 5

0 E

5

~ ~ ~ ~ ~

.:-.." ~ "" I

I

40 50

~SO. I -~:Fil --hi": l

]-

Conduction angle

~ "' ....... ~ I "I'-.. ~ 8 .. 8 :¥ 7

0 *600 ·120° J "2700 "t

5 *300 II "900 I "1800 I *3600

o 10 20 30 40 50 60 70 80 Average On-State Current· Amperes

204

Series 050


90

80 j1200 ~1800 J "9001'> "SOO /V..-r I

e ;. 70

g 60

'N 50 .~

i5 40 ~

0

0

~ ~ ~

+300

V/ v: l /. ~ /. ~ ~

~ 3

§ 20

.~ 1

:1 0/ o 10 20 30 Average On·State Current - Amperes


120

o .g 80 ~

~ SO

j 40

E E 20 'x :¥ 0

.'20° *900

*300 *600 V./ ')' V./ V/./

,I /. ~h V V..a ~

V ~ V.8

[l1li""

-' o 10 20 30 40 50 Average On-State Current· Amperes

1800

lil ~

Conduction

lang lei 1-

40 50

+360°

/~~ "1fOO '/ ./.. :/

3S0' r---I -if!ii if!ii -i-'.I] l. ]-

-Conduction _ angle _

I I 60 70 80


FigureS Maximum transient thermal Impedance

0.4

0.3

§

h E u 0.2

H I- ~ 0.1

~ § .~ .~

e § .... ~ 0

V 1-1-' .001 .01 0.1 Pulse DuratIon· Seconds

Figure 6

"

1.0

Maximum non repetitive surge current at rated load

1100 '" "-""- f=~OHZ

10

i 1000 <t "- TJ=1250C

t:: 900

~ ~ 800 S "I o 700

~ 600

i'--t--i'---

.............

100

'-

1 6 8 10 20 40 60 80100 Number of Cycles

Series 050

Figure 7 Maximum forward on-state characteristics

5000

1000

100

10 o

6

II i 1.0

25°C

h V/1250C

'I

2.0 3.0 Instantaneous On-State Voltage - Volts

.,-

4.0 5.0

205

I

Silicon Controlled Rectifiers 86 Amps RMS, VDRM AND VRRM Up To 600 Volts

• High di/dt - 200 V/l'sec • 1200 Amperes surge current capability • Low forward on-state voltage • Package conforming to either

TO-209AC or TO-208AD outline • Economical for general purpose phase

control applications

Dim_ Inches Millimeter


A B 1_050 1.060 26.67 26.92 C 1.161 29.49 D 5.850 6.144 149.10 156.06 E 6.850 7.375 173.99 187.33 F .797 .827 20.24 21.01 G .276 .286 .701 7.26 H .948 24.08 J .425 .499 10.80 12.67 K .260 .280 6.60 7.11 M .500 .600 12.70 15.24 N .140 .150 3.56 3.81 P .295 7.49 R .900 22.86 S .225 .275 6.48 6.99 T 1.750 44.45 U .370 .380 9.40 9.65 V .213 .223 5.41 5.66 W .065 .075 1.65 1.91 X .215 .225 5.46 5.72 Y .290 .315 7.37 8.00 Z .514 .530 13.06 13.46 AA .089 .099 2.26 2.51

Note 1: '12-20 UN F-2A Note 2: Full thread within 2'12 threads

206

Notes

2 Dia.

Dia.

Dia. Dia.

Series 052

I I !

-ll_ G ..i

T00208AD T00209AC (To-tl3) (TOo94)



05201GOA 100 200 05202GOA 200 300 05203GOA 300 400 05204GOA 400 500 05205GOA 500 600 05206GOA 600 700

Note 1:

To specify dv/dt other than 200V/l'sec, enter appropriate letter in place of "G u•

Note2:

K ~ 300V/p.sec H ~ 500V/p.sec

To specify package designation other than standard lead, enter appropriate letter in place of "AU.

B = Insulated Lead D = Flag Terminal C = Top Stud (consult factory)

Silicon Controlled Rectifiers Series 052 (Note 1)


Forward ConductIng Max. RMS on·state current IT(RMS) 86 Amps Tc = 87°C Max. average on-state cur. IT(AV) 55Amps Tc = 87°C Max. peak on-state voltage VTM 2.0 Volts 1m = 220 A (peak) Max. holding current 'H 200mA Max peak one cycle ITSM 1200A Tc = 87°C, 60 Hz surge current

Max.I't capability for fusing I't 6000A'S t=8.3 r!'ls

Switching Critical rate of rise of on-state current dl/dt 1 OOA/!,sec. TJ = 125°C (note 2)

Typical delay time (note 2) Typical circuit commutated turn-off time (note 3)



rriggerlng Max. gate voltage to trigger Max nontrlggering gate voltage

Max. gate current to trigger Max. peak gate power Average gate power Max. peak gate current Max. peak gate voltage (forward) Max. peak gate voltage (reverse)


Header Weight

Mounting Torque Dimensions

Note 1 Note 2

Note 3

td 3.0!,sec.

tq 100!,sec. TJ =125°C

RSJC 0.40 oC/W TJ -40°C to + 125°C Tsts -400Cto + 150°C

IORM 10mA TJ = 125°Cand VORM

'RRM 10mA TJ = 125°C andVRRM dv/dt 200VI!'sec. TJ = 125°C

VGT 3.0V VGD 0.25V TJ = 125°C

IGT 100mA PGM 15W

PG(AV) 3.0W tp = 10 !,sec.


High strength copper stud and base with a 1/2-20 UNF 2A thread for through mounting on a heat sink. Nickel plating of base prevents corrosion. Glass to metal construction. 052 - GOA Approximately 3.6 ounces (102.0 grams) 052 - GOD Approximately 3.24 ounces (91.8 grams) 130 in. Ibs. max In accordance with TO-208AD or TO-209AC outlines

Tc = 25°C unless otherwise noted ITM = 50A, Vo = VORM ' VGT = 12Vopen circuit, 20 ohm-0.1 !,sec. rise time 'TM = 50A, dildt = 5A/!,sec., VR during turn-off interval = 50V min., reapplied dv/dt = 20VI!'sec., linear to rated VORM ' VGT = OV

207



130

125

120

2r 115

~ 110

l105 ~ 100

~ 95 il E 90

E 85

~ 80

'" .....

o

lil= ~ ,,~ ~ ~-

"-~ ~ ~ri~?~ction _ ,-" t'::r-..

" ~ I'... " 1""- /""-.. *600 I .'200 "-

*300 II '900 II *'800

1 a 15 20 25 30 35 40 45 50 55 60 Average On-State Current· Amperes


130 125

120

5' 115

~ 110 e 105 g 100

~ 95

II 90

......... ..... ~ ~ ~~ ~ ~ ;:,..

0

3S0' -~!~ --i~i' . ,-

Conduction -

;::-... angle -~ I ,"!..

85

~ 80 'x 75

~ 70 *300

'SOo '1200-t---~:>rs: ~.gO°1F-*'I~00ff-.3600

o 10 20 30 40 50 so 70 80 90 Average On-State Current - Amperes

208

Series 052


100

90 '!zoo T-i80d "'gOo

.600 1/ I 'L V I

<-300

/L /. / .// ~ lil 'A 0-

h; ~ ~ ~ fIi' Conduction

~ angle. I

80

70

SO

50

40

30

20

10

o o 10 15 20 25 30 35 40 45 50 55 60 Average On·State Current· Amperes


140 130 120

*3600

*270° 110 100

90 80 70

60 50 40 30

20 10 o

'1180~ V/

"1200/, ~ '9pr, :;'

sao Z 3S0' V~ ..... r--I

J~ ~ 'lfil :~ ~ b .. ,

..a;; JIll""" Conduction IP"'" -rg1et-

" o 10 20 30 40 50 60 70 80 90 Average On-State Current· Amperes


FigureS Maximum transient thennal impedance

0.4

g 0.3

h: E u = ~O.2 E ~ ~ 0 ~ ~o § 25 •

'§ 't;

1

~ ~ 0

V

,/

V .-:.-

,/

0.001 0,01 0.1 1.0 10,0

Pulse Dura!lon-Seconds

FigureS Maximum nonrepetitive surge current at rated load conditions

1200

1100

~ 1000 E

" c 900

~ u

~ o 800

o 700 ~

~ ~

f=6QHz

TJ"1250C

"'-""-.

~ ~ r-----

100

~ 600 I 8 10 20 40 60 80 100

Number of Cycles

Series 052


10000

100

~ 1< E

" 10 c

~ U

~ ~ '1 6 " 0

" c

c

~

a

/1 0= == 1250C

0

1

25QC

( J

0.5 1.0 1.5 2.0 2.5 3.0 3.5

Instantaneous On-Stage Voltage - Volts

209

I

Silicon Controlled Rectifiers Series 55C 86 Amps RMS, VDRM AND VRRM Up To 1200 Volts

• High dildt - 200 V/p.sec • 1200 Amperes surge current capability • Package conforming to either

TO·209AC or TO·208AD outline

"~~ Dim. Inches Millimeter

5 --, B K

Minimum Maximum Minimum Maximum Notes c

A B 1.050 1.060 26.67 26.92 C 1.161 29.49 D 5.850 6.144 149.10 156.06 E 6.850 7.375 173.99 187.33 F .797 .827 20.24 21.01 G .276 .286 .701 7.26 H .948 24.08 J .425 .499 10.80 12.67 2 T0-208AD T0-209AC K .260 .280 6.60 7.11 Dia. (T0-83) (T0-94)

M .500 .600 12.70 15.24 N .140 .150 3.56 3.81 P .295 7.49 Catalog Catalog Forward & Reverse

R .900 22.86 Dia. Number Number Reverse Transient

S .225 .275 6.48 6.99 (Note 1) Repetitive Blocking

T 1.750 44.45 Blocking

U .370 .380 9.40 9.65 Std. Lead Flag type V .213 .223 5.41 5.66 Dla. W . 065 .075 1.65 1.91 Dia . 55C80B 55C80BF 800 900 X .215 .225 5.46 5.72 55C100B 55C100BF 1000 1100 Y .290 .315 7.37 8.00 55C120B 55C120BF 1200 1300 Z .514 .530 13.06 13.46 AA .089 .099 2.26 2.51 Note 1:

Note 1: For insulated cathode lead, add suffix '12·20 UNF·2A "It.:' to catalog number. Note 2: Example: 55C100BIL Full thread within 2'12 threads

Note 2:

To specify dv/dt other than 200V Ip.sec, contact factory.

210

Silicon Controlled Rectifiers Series sse (Note 1)


Forward Conducting Max. RMS on·state current IT(RMS) 86Amps Tc = 70°C Max. average on· state cur. IT(AV) 55 Amps Tc = 70°C Max. peak on·state voltage VTM 2.2 Volts 'TM = 220 A (peak) Max. holding current 'H 200mA Max peak one cycle ITSM 1200A Tc = 87°C, 60 Hz surge current

Max.I't capability for fusing I't 6000A'S t=8.3 ms

Switching Critical rate of rise of on·state current dildt 100AlfLsec. TJ = 125°C (note 2)

Typical delay time (note 2) Typical circuit com mutated

turn·off time (note 3)



Triggering Max. gate voltage to trigger Max nontriggering gate voltage Max. gate current to trigger Max. peak gate power Average gate power Max. peak gate current Max. peaK gate voltage (forward) Max. peak gate voltage (reverse)


Header Weight


Note 1 Note2

Note3

td 3.0fLsec.

tq 100 fLsec. TJ = 125°C

ReJc 0.32°CIW TJ - 40°C to + 125°C Tstg - 40°C to + 150°C

'DRM 10mA TJ = 125°C and VORM

'RRM 10mA TJ = 125°C andVRRM

dv/dt 200V/fLsec. TJ = 125°C

VGT 3.0V VGO 0.25V TJ =125°C

IGT 100mA P GM 15W

PG(AV) 3.0W tp = 10 fLsec.


High strength copper stud and base with a 1/2·20 UNF 2A thread for through mounting on a heat sink. Nickel plating of base prevents corrosion. Ceramic to metal construction. 55C- B Approximately 3.6 ounces (102.0 grams) 55C-BF Approximately 3.24 ounces (91.8 grams) 130 in. Ibs. max In accordance with TO-208AD or TO-209AC outlines

Tc = 25°C unless otherwise noted 'TM = 50A, VD = VORM' VGT = 12Vopen circuit, 20 ohm-0.1 fLsec. rise time 'TM = 50A, dlldt = 5AlfLsec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/fLsec., linear to rated VDRM, VGT=OV

211


Rgure1 Maximum case tampereture, sinusoidal half wave


Figure 2 Maximum case temperature, rectangular wave

130

120 ~ 360' L ~i~ v 110

I

r:: ~ 80

,~ ~ 70 E .§ 60

~ 50

212

~ ~ I\~ ~ I'--...

~i .... ! l....J-

\ ,,~ ~ "'" Conduction-angle

\ \ r"\" "'- ;~ ') 1'i ~ I I :1

·30' ·60' ·90' ·1 20' .j ~O' ·36<j'1 o 12 24 36 48 60 72 84 96


Series 55C

Figure 3 Maximum power dissipation, sinusoidal half wave 180r---r---r---r---r-~r-~r-~--~--~

~ 150 ~ ~ 120

~ c. g 90

j 60r---r-.n~~~~---1---1---+---+---1

E 30r---~~~-4---4---4---+---+---+--~ j Average Forward Current-Amperes

Rgure4 Maximum power dissipation, rectangular wave

¥l 150 ~ ~ 120

~ c.

360' ~f~ ~I ... .l li Conduction angle

:~ 90 r----,---+ o

90

I 60r---r-~~~~~---+---+---+---+--~ E 30r--1~~~~--~--+---t-~~-T---1 j

20 30 40 50 90 Average Forward Current-Amperes



0.4

v V

,/ V

1 ....-..,...

.01 0.1 1.0

Pulse Duration-Seconds

Figure 6 Maximum surge current (nonrepetltlve) at rated load conditions

1200

1100

" ~ a. 1000 E <: I l' ~ 8

i Ii:

900

800

700

~ - 600

~ ~

........ .........

~

1 8 10 20 Cycles At 60 Hertz Sinusoidal

10.0 100

'-....... '-....

40 60 80 100

Series SSC


10000

25'C 1000

125'C y-

/' 100

/;

'I 10

1.0 2.0 3,0 4,0 5.0 6,0 7,0

Instantaneous On-State Voltage-Volts

213

Silicon Controlled Rectifiers 110 Amps RMS, VORM AND VRRM Up To 600 Volts

• High di/dt· 200 V/JLsec • 1600 Amperes surge current capability • Low forward on·state voltage • Package conforming to either

TO·209AC or TO·208AD outline • Economical for general purpose phase




A B 1.050 1.060 26.67 26.92 C 1.161 29.49 D 5.850 6.144 149.10 156.06 E 6.850 7.375 173.99 187.33 F .797 .827 20.24 21.01 G .276 .286 .701 7.26 H .948 24.08 J .425 .499 10.80 12.67 K .260 .280 6.60 7.11 M .500 .600 12.70 15.24 N .140 .150 3.56 3.81 P .295 7.49 R .900 22.86 S .225 .275 6.48 6.99 T 1.750 44.45 U .370 .380 9.40 9.65 V .213 .223 5.41 5.66 W .065 .075 1.65 1.91 X .215 .225 5.46 5.72 Y .290 .315 7.37 8.00 Z .514 .530 13.06 13.46 AA .089 . 099 2.26 2.51

Note 1: %·20UNF·2A Note 2: Full thread within 2Yz threads

214

Notes

2 Dia.

Dia.

Dia. Dia.

Series 071

'~ s -, B

C

T0-208AD To-209AC (10-83) (10-94)




Note 1:

To specify dvldt other than 200V/JLsec, enter appropriate leiter in place of "G" .

K ~ 300V/JLsec H ~ 500V/JLsec

Note 2:

To specify package designation other than standard lead, enter appropriate leiter in place of "A". B = Insulated Lead D = Flag Terminal C = Top Stud (consult factory)

Silicon Controlled Rectifiers (Note 1)

Series 071


Forward Conducting Max. RMS on-state current IT(RMS) 110Amps Tc=B7°C Max. average on-state cur. IT(AV) 70 Amps Tc = 87°C Max. peak on·state voltage VTM 1.60 Volts ITM = 220 A (peak) Max. holding current IH 200mA Max peak one cycle ITSM 1600A Tc = 87°C, 60 Hz surge current

Max.I't capability for fusing I't 10,624A'S t=8.3ms

Switching Critical rate of rise of on·state current di/dt 100A/"sec. TJ = 125°C (note 2)

Typical delay time (note 2) Typical circuit commutated turn-off time (note 3)


Blocking Max. leakage current Max. reverse leakage Critical rate of rise of off·state voltage

Triggering Max. gate voltage to trigger Max nontriggering gate voltage



Header Weight


Note 1 Note 2

Note3

td 3.0 ",sec.

tq 100 ",sec. TJ =125°C

RSJC 0.40 oCIW TJ - 40°C to + 125°C Tstg -40°Cto +150°C


IRRM 10mA TJ=125°CandVRRM dv/dt 200V/",sec. TJ = 125°C

VGT 3.0V VGO 0.25V TJ = 125°C

IGT 100mA PGM 15W

PG(AV) 3.0W tp = 10 "sec.

IGM 4.0A VGM 10V VGM 5.0V

High strength copper stud and base with a 1/2·20 UNF 2A thread for through mounting on a heat sink. Nickel plating of base prevents corrosion. Glass to metal construction. 071-GOA Approximately 3.6 ounces (102.0 grams) 071-GOD Approximately 3.24 ounces (91.8 grams) 130 In. Ibs. max In accordance with TO-20BAD or TO·209AC out I ines

T c = 25°C unless otherwise noted ITM = 50A, Vo= VORM ' VGT = 12Vopen circuit, 20 ohm·0.1 ",sec. rise time ITM = 50A, di/dt = 5A/",sec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/"sec., linear to rated VORM ' VGT = OV

215



130

125

120

:r '15

~ 110

~ 105

t-~ 100

95

3 90

E

E 'x

85

80

~ 75

..... ~ !IIIiI

,,~ ~ ':" ~ I:::--

r-;;: t'... ...... "' +600

.300 Jl

I 1800 _

Iil= I-:-l -

I'-.. Conduction -

~ ~g:e -

"'\...1'-I II ·120°

'900 J Il ·180°

o 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 Average On-State Current· Amperes


130

120 ~

360' r-I

~ ~ fiiJ 'FA!

I·' "\ ~ ~ _I

~ Conduction

~ ~~ angle __

I ~ ~ I I I '-..,

, 00 '6r '9O~IIOO "~OO i21~ '36

110

100

90

80

70

Series 071


.1800 100

90

80

70

60

50

40

30

20

10

o o

'12~/ +900 -j'T -

'600 £ VA '300 / ~ VI }' /./. "/

Iil= /~ '~V

/,,& ~ I-:-l _

'" Conduction

I' rgle I -10 20 30 40 50 60 70 80



14 13 12

0 0 0

"360° ·270°/

"8bo/. '/

c a

110 10 0

0 '1200 / /' 'g 'i:j Ci

~ i1. E

E 'x

00 ~

0 70 6 0

0 0 0

0

~ .........

h; ...

'900 ", ,

'600 ff. '0 .300 /A '//-~ r

/

~ ~ ... 'l

360' r-I 'fiiJ 'FA! I~i: , , Conduction

an1'e!-60

o 10 20 30 40 50 60 70 80 90 100 110 10 20 30 40 50 60 70 80 90 100 110 Average On-State Current Amperes Average On-State Current Amperes

216



0.4

§ 0.3

h: E U - £. 0.2 .. ~ ~ a ~ 0

~ ~O.l ii 0 .~ ''3 E 3 >- ~ 0

v ..... ,001

/

v/

.01 0.1 Pulse Duration· Seconds

Figure 6

,,/'

/

1.0 10

Maximum nonrepetltive surge current at rated load conditions

1600

1500

~ 1400

E « 1300

c

l~ ~

b-, f=o60Hz "'", TJ"'1250C -

~ ~ 1200 u .!!:l 1100 ~

8 1000

~ 900

~ ~

100

'-

1 6 8 10 20 40 60 80

Number of Cycles

Series 071


10000

1000

~ 100

(J

10

1

.-

'/ v.

= = 125°C

25°C

/I

0.5 1.0 1.5 2.0 2.5 3.0

Instantaneous On·State Voltage· Volts

217

Silicon Controlled Rectifiers 110 Amps RMS, VORM AND VRRM Up To 1200 Volts

• High dl/dt - 200 VI"sec • 1600 Amperes surge current capability • Package conforming to either

TO-209AC or TO-208AD outline



A B 1.050 1.060 26.67 26.92 C 1.161 29.49 D 5.850 6.144 149.10 156.06 E 6.850 7.375 173.99 187.33 F .797 .827 20.24 21.01 G .276 .286 .701 7.26 H .948 24.08 J .425 .499 10.80 12.67 2 K .260 .280 6.60 7.11 Dla. M .500 .600 12.70 15.24 N .140 .150 3.56 3.81 P .295 7.49 R .900 22.86 Dia. S .225 .275 6.48 6.99 T 1.750 44.45 U .370 .380 9.40 9.65 V .213 .223 5.41 5.66 Dia. W .065 .075 1.65 1.91 Dla. X .215 .225 5.46 5.72 Y .290 .315 7.37 8.00 Z .514 .530 13.06 13.46 AA .089 .099 2.26 2.51

Note 1: %-20 UNF-2A Note2: Full thread within 2% threads

218

TO-208AD (T0-83)

Catalog Catalog Number Number (Note 1)

Std. Lead Flag type

70CSOB 70C80BF 70C100B 70C100BF 70C120B 70C120BF

Note 1:

Series 70C

TO-209AC (T0-94)

Forward & Reverse Reverse Transient Repetitive Blocking Blocking

800 900 1000 1100 1200 1300

For insulated cathode lead, add suffix "I~' to catalog number. Example: 70C100BIL

Note 2:

To specify dv/dt other than 200V/"sec, contact factory.

Silicon Controlled Rectifiers Series 70C (Note 1)


Forward Conducting Max. RMS on·state current IT(RMS) 110Amps Tc = 78°C Max. average on-state cur. IT(AV) 70Amps Tc = 78°C Max. peak on-state voltage VTM 1.85 Volts ITM = 220 A (peak) Max. holding current IH 200mA Max peak one cycle ITSM 1600A Tc = 78°C, 60 Hz surge current

Max.!'t capability for fusing I't 10,700A'S t=8.3 ms

Switching Critical rate of rise of on-state current dildt 100All'sec. TJ = 125°C (note 2)



Thermal values Maximum thermal resistance Operating junction temp range Storage temperatu re range

Blocking Max. leakage current Max. reverse leakage Critical rate of rise of

off-state voltage



Header Weight


Note 1 Note2

Note3

td 3.0I'sec.

tq 1OOl'sec. TJ = 125°C

ReJc 0.28°CIW TJ - 40°C to + 125°C Tstg - 40°C to + 150°C

IDRM 10mA TJ = 125°C and VORM


dvldt 200V/l'sec. TJ = 125°C

VGT 3.0V VGO 0.25V TJ =125°C

IGT 100mA P GM 15W

PG(AV) 3.0W tp = 10 I'sec.

IGM 4.0A VGM 10V VGM 5.0V

High strength copper stud and base with a 1/2-20 UNF 2A thread for through mounting on a heat sink. Nickel plating of base prevents corrosion. Ceramic to metal construction. 70C-B Approximately 3.6 ounces (102.0 grams) 70C-BF Approximately 3.24 ounces (91.S grams) 130 in.lbs. max In accordance with TO-20SAD or TO-209AC outlines

Tc = 25°C unless otherwise noted ITM = 50A, Vo= VORM' VGT = 12Vopen circuit, 20 ohm-0.1I'sec. rise time ITM = 50A, di/dt = 5AIp.sec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/p.sec., linear to rated VORM' VGT = OV

219


Figura 1 Maximum case temperature, sinusoidal half wave

130 120

P 110 ~ 100

~ .. 70

~~\j Conduction angle

~ E eo .60' .120' ~ 50 rtl' "_el'::' i ~~~·~30~·~-r]~~'·I~~·~In~'.[1!BO'~~~~;.[~~0'~

10 20 30 40 50 60 70 80 90 100 110 120 Average Forward Current-Amperes

Figura 2 Maximum case temperature, rectangular wave

120

0 110

o~ 100

-; 90 Co E 80 ~ .. 70

~ E eo ~ 50 'iii ::;

220

~

film W ... .! L. . .! Conduction angle


Series 70C

Figura 3 Maximum power dissipation, sinusoidal half wave

;g ~ 140

~ 120

~ 100

:~ " 80 I 60

E 40

~ 20

~

·180'

~~j Conduction angle


Flgura4 Maximum power dissipation, rectangular wave

180~:EI3:E~~3=EI:EI3:EfjEI3:£l·~36EO'~ 1eo~ j 140

J 120

i 100 ... 5 80

j 60

E 40

~ 20 '1;\ ::;

360'

il~ W ... .! L . ..l Conduction angle



FigureS Maximum transient thennallmpedance

0.4

i- 0.3 ~;:: 0._ EO

=@ ~ 0.2

ffi~ ~o i § 0.1

.~ 13 ~ § -f-t-~ 0

.001

/V

V

.01 0.1


FigureS

1/ ....

1.0 10

Maximum forward on·state characteristics 1000

// 125'C

J 100

25'C 10

1 o 1.0 2.0 3.0 4.0 Instantaneous On-State Voltage-Volts

100

Series 70C

Figure 7 Maximum surge cUlTent (non repetitive) at rated load conditions

1600

1500 ~ i E « I c ~ ° " ~ ~

~

'" ""-,--"" ~

1400

1300

1200

1100

1000 ~ ~

8:' 900 " 1 6 8 10 20 40 60 80 Cycles At 60 Hertz Sinusoidal

221


• High di/dt - 200 V/p.sec • 1800 Amperes surge current capability • Low forward on-state voltage • Package conforming to either

TO-209AC or TO-208AD outline

Dim_Inches Millimeter


A B 1.050 1.060 26.67 C 1.161 D 5.850 6.144 149.10 E 6.850 7.375 173.99 F .797 .827 20.24 G .276 .286 .701 H .948 J .425 .499 10.80 K .260 .280 6.60 M .500 .600 12.70 N .140 .150 3.56 P .295 R .900 S .225 .275 6.48 T 1.750 U .370 .380 9.40 V .213 .223 5.41 W .065 .075 1.65 X .215 .225 5.46 Y .290 .315 7.37 Z .514 .530 13.06 AA .089 .099 2.26

Note 1: '12-20 UNF-2A Note2: Full thread within 2'12 threads

222

Maximum

26.92 29.49

156.06 187.33

21.01 7.26

24.08 12.67

7.11 15.24 3.81 7.49

22.86 6.99

44.45 9.65 5.66 1.91 5.72 8.00

13.46 2.51

Notes

2 Dia.

Dia.

Dia. Dia.

Series 080

R~~ S -. B

C

TO-208AD TO-209AC (T0-83) (T0-94)




Note 1:

To specify dv/dt other than 200V/p.sec, enter appropriate letter in place of "G".

K 2: 300VI JLsec H 2: 500Vl JLsec

Note 2:

To specify package designation other than standard lead, enter appropriate letter in place of "A".

B = Insulated Lead D = Flag Terminal C = Top Stud (consult factory)



Forward Conducting Max. RMS on·state current IT(RMS) 12SAmps Tc=B7°C Max. average on·state cur. IT(AV) BOAmps Tc = B7°C Max. peak on-state voltage VTM 1.40 Volts ITM = 220 A (peak) Max. holding current IH 200mA Max peak one cycle ITSM 1BOOA Tc = B7°C, 60 Hz surge current

Max. I't capability for fusing I't 13,500A'S t=B.3ms

Switching Critical rate of rise of on-state current dlJdt 100A/l'sec. TJ = 12S0C

(note 2) Typical delay time (note 2) Typical circuit com mutated turn-off time (note 3)

Thermal values Maximum thermal resistance Operating junction temp range


Blocking Max. leakage current Max. reverse leakage


Triggering Max. gate voltage to trigger Max nontrlggerlng gate voltage



Header Weight


Note 1 Note 2

Note3

td 3.0I'sec.

tq 1OOl'sec. TJ =125°C

ReJc 0.40 oCIW TJ - 40°C to + 125°C Tstg - 40°C to + 150°C


IRRM 10mA TJ = 12SoC andVRRM dv/dt 200Vfl'sec. TJ = 125°C

VaT 3.0V

Vao 0.2SV TJ = 12SoC

fGT 100mA

PaM 15W

Pa(AV) 3.0W tp = 10 I'sec.

laM 4.0A VaM 10V VaM 5.0V

High strength copper stud and base with a 1/2-20 UNF 2A thread for through mounting on a heat sink. Nickel plating of base prevents corrosion. Glass to metal construction. OBO - GOA Approximately 3.6 ounces (102.0 grams) OBO - GOD Approximately 3.24 ounces (91.B grams) 130 in. Ibs. max In accordance with TO-20BAD or TO-209AC outlines

Tc = 25°C unless otherwise noted ITM = 50A, Vo= VCRM ' VaT = 12Vopen circuit, 20 ohm-0.1I'sec. rise time ITM = 50A, dlJdt = SAfl'sec., VR during turn-off Interval = 50V min., reapplied dv/dt = 20V/l'sec., linear to rated VORM ' VaT = OV

223



130

~1IId--+--+--I--+-I/~ 110 ~

9O"---l---+---jf-+-+-+-+-f-"o.,ri.::>.."-+--l

10 20 30 40 50 60 70 80 90 Average On-State Current - Amperes


224

130

120 ..... 360'

r-I

"'II1II ~ 'fill 'fill i.e. , ... ,

~ ~ ~ I_I Conduction

~ ~ ~ angle

t-....

~ ~ t'-.. "I i'r-.,

'600 -1200 '2I1 )0 IJo '300 TI' air '1800

110

100

90

80

70

80 a 10 20 30 40 50 60 70 80 90 100 110 120 130 Average On-State Current - Amperes

Series 080


i! ~ 0

.2 ~ 'li is

~ ~ E E 'x :i1

100

90

SO

70

60

50

40

30

20

10

a

• ,20h '~oo *900 /VI

'600 /L /1 I V/ /

lil '300/ V/ /' / V.o '/

//,. ~ /. ~ ~

Conduction _

~ angle , I I a 10 20 30 40 50 60 70 80 90 Average On-State Current - Amperes


140 130 120

',sbo/

.3600

·270°

/. /' 110

100 90 '12001/ 'l'" 80 70 60 50

40 30 20 10 o 1/ ~

·900

"600 ~

'~OVh ~ r.; ~

~

./ '/ ~

360' r-I ;fIll [fill I ... i

...

ConductIOn angle

o 10 20 30 40 50 60 70 SO 90 100 110 120 130 Average On-State Current - Amperes



0.4 v v

,/

0.01 0.1 1.0


FigureS Maximum nonrepetltlve surge current at rated load conditions

1800

1700 ~

~ 1600 c. E

'" 1500 I C ~ 1400 .3 'C

"'" ""- f:::60hz

" TJ"'t250 C

", ~

10 100

1300 ~

of. 1200 ~

~ ......... Q. 1100

1 6 8 10 20 40 60 80 100

N umber of Cycles

Series 080


10000

1000 ~:,..::p

100 1/

0 125°C 25°C

1 0.5 1.0 1.5 2.0 2.5 3.0 3.E

Instantaneous On-State Voltage· Volts

FigureS lYplcal forward on-state characteristics

10000

1000 ,..-::;..-

100 '/

10 125°C /250C

1 o 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Instantaneous On-State Voltage - Volts

225


• 3500 Amperes surge curreent capability • Low forward on-state voltage • Available with flex lead or flag terminal • Economical for general purpose phase




A B 1.237 1.243 31.42 31.57 C 1.350 1.360 34.29 34.54 D 7.428 7.671 188.67 194.84 E 7.382 8.100 187.50 205.74 F 1.047 1.077 26.59 27,36 G .365 .385 9.27 9.78 H 1.383 35.13 J .660 .749 16.76 19.02 K .338 . 348 8.59 8.84 M .625 .687 15.88 17.45 N .140 .150 3.56 3.81 p .295 7.49

Note 1: 3/4-16 UNF-2A Note 2: Full thread within 2'12 threads




Note 1:

To specify dv/dt other than 200V/l'sec, enter appropriate letter In place of "G".

Note 2:

K ~ 300Vll'sec H ~ 500V/"sec

To specify package designation other than standard lead, enter appropriate letter in place of "A".

B = Insulated Lead

226

Notes

2 Dia .

Dla.

K

Series 151

TO-209AB (TO-93)

N



Forward Conducting

Max. RMS on·state current IT (RMS) 235 Amps Tc~ 74°C Max. average on·state cur. IT(AV) 150Amps Tc = 74°C Max. peak on·state voltage VTM 1.7 Volts ITM = 500 A (peak) Max. holding current IH 200mA Max peak one cycle ITSM 3500 A Tc =74°C, 60 Hz surge current

Max. Pt capability for fusing I't 50,000A'S t=8.3ms

Switching Critical rate of rise of on·state current di/dt 100A/"sec. TJ =125°C (note 2)


turn·off time (note 3)


Blocking Max. leakage current Max. reverse leakage Critical rate of rise of off·state voltage




Note 1 Note2

Note3

td 3.0 "sec. tq 100 jlsec. TJ =125°C

RSJC 0.2°C/W TJ - 40°C to + 125°C Tsts - 40°C to + 150°C



dv/dt 200Vljlsec. TJ = 125°C

VGT 3.0V

VGO 0.25V TJ = 125°C

IGT 150mA P GM 10W

PG(AV) 2.0W tp = 10 jlsec.

IGM 2.0A VGM 10V

VGM 5.0V

High strength copper stud and base with a 3/4·16 UNF 2A thread for through mounting on a heat sink. Nickel plating of base prevents corrosion. Glass to metal construction. Approximately 7.44 ounces (211.1 grams) 300 in. Ibs. max In accordance with TO-209AB outline

Tc = 25°C unless otherwise noted ITM = 100A, VD= VORM' VGT = 12Vopen circuit, 20 ohms-0.1"sec. rise time

1m = 100A, di/dt = 5A1"sec., VR during turn-off interval = 50V min., reapplied dv/dt = 20VI"sec., linear to rated VDRM , VGT = OV

227

I


Figure 1 Maximum case temperature, sinusoidal half wave

130

120

PllO I ~ 100

~ 0. 90

~

~ ~ ~~ \ \

360"

~ .. fA I--

~ -, .. "

Conduction

~ "- I'-- angle

1'\ I" ""-E ~ 80

* U 70 E ~ 60 .~

::; 'to· 40

Ii f\ !I I

'61; 'j, jy0; L10"

80 120 160


Figure 3

"" '" '311"

200 240 280

Maximum power dissipation, sinusoidal half wave 320

(11280

~ 240 J .~ 200 0. .~ 160 is CD 120

~ 80 E

E 40 .~

::;

I--

I/'

I---'30·

~ /£

/AiW Ii!O"

·120° *90"

-600 'l

/./

'/.

·360"

;18J /

./

360·

l'fA l·fA W\/ ' ... '

Conduction

I an~le I I I

40 80 120 160 200 240 280


FigureS Maximum transient thennallmpedance

.35

.30

! .25

~ ~§'" .20 0._ EU

~~ .15

~~ .10 >-,E Eo .~ ~ 0.5 ~ 0

t= ~ 0 .001

VV

I-1-""-

.01 0.1 Pulse Duration-Seconds

228

/'

1.0 10 100

Series 151

Figure 2 Maximum case temperature, rectangular wave

130

120

~ 110 I i 100

~ 90 E {E 80

* '-' 70 E

I'-l. ~ ~

1\ ~~ ~

360·

ilFlJ -~i , i j-·t·_--; ~

Conduction -

~ t"- angle

"\~ i'-..

""" il E 60 .~

::; '3r j60· '9~1 WO" '180• 1'36~

40 80 120 160 200 240 280


Figure 4 Maximum power disSipation, rectangular wave

320

fI) 280

~ 240 J .~ 200 0. .~ 160 o iii 120

~ E 80

.g 40 ~ ::;

·'8~

·120~ /

*900

I--I-- -'30" i~O· /, /

./

. //.

IJh '/ ',ay

i!V I/'

40 80 120 160


'360"

/

360· I--

~fFlJ I--I--

I~fj l. . r-Conduction

r-I--

angle I--

200 240 280



10000

~

~ "E « I

1000

~ 100

8 "0

~ ~ 10

1

~5!C H:::: t::::,is°d

VI

o Instantaneous On-State Voltage-Volts

Figure 9 Gate characteristics 10

'\. I 'maximum peak

I power dissipation 10W

I ............

I .............

3V

~15omA ~

.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0

Instantaneous Gate Current-Amperes

Series 151

Figure 7 Maximum surge current {non repetitive) at rated load conditions

3500

3000

~ 2500 "E « 2000 I c ~ 1500

.3 "0 1000

~ &' 500

o

~ ........... t--..

i' ...... ...............

1 6 810 20 40 60 80

Cycles At 60 Hertz Sinusoidal

Figure 8 Maximum non-repetitive sub-cycle surge currenl and 12t following on-state rated load conditions

~ 100

x _r---

junction temperatur e = 125°C

l"-

I 10

Pulse Width-Milliseconds

Figure 10 Peak gale current/voltage vs pulse widlh

Ie: 100 1000

No A pplies for ectangular rigger pulses

.1

"-

" 1.0

Gate Pulse Width (p Sec)

Typical gate trigger current at

-40c C

r-.... 25c C

TIm 25'C

typical gate trigger voltage al

""'tHII.Ul J -40 C

25c C 125°C

10 100 1000

229


• High di/dt - 200 V/l"sec • 3000 Amperes surge current capability • Primarily for line com mutated converters



A B 1.237 1.243 31.42 31.55 0 7.428 7.671 188.67 194.84 E 7.382 8.100 187.50 205.74 F 1.047 1.077 26.59 27.36 G .365 .385 9.27 9.78 H 1.383 35.13 J .660 .749 16.76 19.02 K .338 .348 8.59 8.84 M .625 .687 15.88 17.45 N .140 .150 3.56 3.81 P .295 7.49

Note 1: 3/4-16 UNF-2A Note 2: Full thread within 2% threads

Catalog Forward & Reverse Number Reverse Transient (Note 1) Repetitive Blocking

Blocking

150C80B 800 900 150C100B 1000 1100 150C120B 1200 1300

Note 1:

For insulated cathode lead, add suffix "It.:' to catalog number. Example: 150C100BIL

Note 2:

To specify dv/dt other than 200V/l"sec, contact factory.

230

Across flats

2 Dia.

Dla.

K

A

Series 150C

=~

TO-209AB (TO-93)

o

Silicon Controlled Rectifiers (Note 1)

Series 150C


Forward Conducting Max. RMS on-state current Max. average on-state cur.

Max. peak on-state voltage Max. holding current Max peak one cycle surge current


Switching

IT(RMS) IT(Av) VTM IH ITSM

I't

235 Amps Tc= 73°C 150Amps Tc = 73°C 1.7 Volts ITM = 500 A (peak) 200mA 3000 A Tc = 73°C, 60 Hz

37,000A'S t=8.3 ms

Critical rate of rise of on-state current (note 2)

di/dt 100A/!,sec. TJ = 125°C





Triggering Max. gate voltage to trigger Max nontriggering gate voltage Max. gate current to trigger Max. peak gate power Average gate power

Max. peak gate current Max. peak gate voltage (forward) Max. peak gate voltage (reverse)



Note 1 Note 2

Note3

td 3.0 !,sec.

tq 100 !,sec. TJ =125°C

RSJC 0.2°CIW

TJ -400Cto +125°C

Tstg -40°Cto +150 oC


IRRM 20mA TJ = 125°C andVRRM dvldt 200V/!'sec. TJ = 125°C

VGT 3.0V VGO 0.25V TJ = 125°C

IGT 150mA PGM 10W

PG(AV) 2.0W tp= 10 !,sec.

IGM 2.0A

VGM 10V VGM 5.0V

High strength copper stud and base with a 3/4-16 UNF 2A thread for through mounting on a heat sink. Nickel plating of base prevents corrosion. Ceramic to metal construction. Approximately 7.44 ounces (211.1 grams) 300 in. Ibs. max In accordance with TO-209AB outline

Tc= 25°C unless otherwise noted ITM = 100A, Vo = VORM ' VGT = 12V open circuit, 20 ohms-0.1 !,sec. rise time ITM = 100A, di/dt = 5AJ!,sec., VR during turn-off interval = 50V min., reapplied dvldt = 20V/!'sec., linear to rated VORM ' VGT = OV

231


Figure 1 Maximum case temperature, sinusoidal hall wave

130

120

I-' 110 I e 100

~ 0. 90 E ~ 80

()~ 70

!5 E 60

~

'" 360"

~ ~ ~,~\./ ~~ ~ Conduction

\\ ~ I'\.. ~ angle

\~ "-.,

I) \ "I'..

II I 'I '130" '6~; '9i1 'IYOi j1rO" '31,0'

40 80 120 160 200 240 280


Figure 2 Maximum case temperture, rectangular wave

130

120

I-' '110 I ~ 100

~ ~ 90 E ~ eo

~ 70

~ 60 '~ ::;

232

...... rrm ~ ~ ti".! l .. ..1 '\ ~~ ~ ~

Conduction

"- angie

V ~ I "'-

I '1 *300

'j i60" *90<' 111120° 'jl Ii '180' 1'361

40 80 120 160 200 240 280


Series 150C

Figure 3 Maximum power dissipation, sinusoidal hall wave

320

(11 280 iii j 240

.~ 200

.~ 160 is (S 120

~ 80 E

,~ 40

::;

'360"

;18J ./ ·120°

'9~ '60"

f-f- -'30" f/ ./ ~ // '~ (~

~C0 ~\ I \, /

f- f-.' ,,-

Conduction f-~ angle f- I I I I I L'

40 80 120 160 200 240 260


Figure 4 Maximum power dissipation, rectangular wave

320

~ 280

j 240

~ 200 c. .~ 160 is Q) 120

& E 80

,~ 40

::;

'360" '180"

·120" ./

'90" ;--;--1--'30" 'r l7 ./

~ -im 1m -

'//. W .... ! 1....1 -

'/ --1,1.; ./ Conduction -'l angle -

I.<'" 40 80 120 160 200 240 280



Figure 5 Maximum transient therrnallmpedance

.3S

.30

~ .25

i~ .20 EU -~ 15

~ ~ f t) 10 >--,2 c c @ ~ 0.5

~ § >-- ~ 0

.001

vI:? I--

,-

01 0.1

Pu\se Duration-Seconds

Figure 6

v

10 10

Maximum forward on·state characteristics 10000

ksJc u-:: 1000

B~oJ II'

If

Instantaneous On-State Voltage- Volts

100

Series 150C

Figure 7 Maximum surge current (nonrepetitlve) at rated load conditions

3300

3000

* 2700 0. E l2400

~ 2100

U 1: 1800

~ LE 1500 ..

~ ~ ~

t--t'----..

I---

l1. 1200 1 6 810

Cycles At 60 Hertz Sinusoidal

~

20 40 60 80

233

Silicon Control/ed Rectifiers 400 Amps RMS, VORM AND VRRM Up To 1200 Volts

• High dv/dt· 200 v//tsec • 4500 Amperes surge current capability • Blocking voltage up to 1200 volts • Excellent for rigorous thermal cyclic

applications



A 0.138 0.143 3.51 3.63 B 0.245 0.255 6.45 6.48 C 7.875 8.250 200.0 209.6 0 1.620 1.640 41.14 41.65 E 0.748 0.752 18.9 19.1 F 1.245 1.275 31.62 32.39 G 1.430 1.460 36.32 37.08 H 0.137 0.143 3.48 3.63 J 0.530 0.554 13.46 14.07

Catalog Forward & Reverse

Number Reverse Transient Repetitive Blocking

Blocking

24008GOF 800 900 24010GOF 1000 1100 24012GOF 1200 1300

Note 1:

To specify dv/dt other than 200Vl/tsec, enter appropriate letter in place of "G".

K ~ 300V//tsec H ~ 500V//tsec

234

Dia.

Dia. Dia. Dia. Dia. Dla.,0.075

A

c

Series 240

H

TO 200 AB



Forward Conducting

Max. RMS on-state current IT (RMS) 400 Amps Tc=87°C Max. average on-state cur. IT(AV) 255 Amps Tc = 87°C

Max. peak on-state voltage VTM 2.3 Volts ITM = 1000 A (peak)

Max. holding current IH 300mA

Max peak one cycle ITSM 4500 A Tc = 87°C, 60 Hz

surge current

Max.I't capability for fusing I't 84,000A'S t=8.3 ms

Switching

Critical rate of rise of on-state current di/dt 500Al!,sec. TJ = 125°C

(note 2)

Typical delay time (note 2)

Typical circuit commutated


Thermal values

Maximum thermal resistance Operating junction temp range


Blocking


Max. reverse leakage


Triggering


Max nontriggering gate voltage



Average gate power


Max. peak gate voltage (forward)

Max. peak gate voltage (reverse)

Mechanical Characteristics Weight Mounting Force Dimensions

Note 1

Note2

Note3

td 3!,sec.

tq 150 !,sec. TJ = 125°C

ReJc 0.08°CIW

TJ -400Cto + 125°C

Tstg -400Cto +150 oC



dv/dt 200V/!'sec. TJ = 125°C

VGT 3.0V

VGO 0.25V TJ = 125°C

/GT 150mA

P GM 16W

PG(AV) 3W tp= 10 !,sec.

IGM 4.0A

VGM 20V

VGM 5.0V

Approximately 2_3 ounces (66 grams) 1000 ± 100 pounds In accordance with TO-200AB outlines

Tc = 25°C unless otherwise noted

ITM = 100A, Vo = VORM' VGT = 20Vopen circuit, 200hms-0.1!,sec.

rise time

ITM = 250A, dl/dt = 5A1!,sec., VR during turn-off interval = 50V min.,

reapplied dv/dt = 20V/!'sec., linear to rated VORM ' VGT = OV

235



130

Average on-state current - Amperes


6000

5000

11 f=60H1Z

!4oo0 ........... ~

Tj=1250C -

~ 3000

a l2000

~ 1000 ~

J! o

........ I"-

6 8 10 Number of Cycles

Figure 4

-

20 40 60 80 100

Maximum transient thermal impedance

. u

09 08

:; 06

g~ .s~ to 04 E ~ ~8 >- 0

C ~ 02 • 0 iii''::; c u ~ § >-.., a

236

I-""

V

V /

V -001 .01 1.0 10 Pulse Duration - Seconds

100

Series 240

Figure 2 Maximum Power Dissipation" Watts 0 700 1;; I 'BoD I ~ 600

.§ 500

J .180°Y-DC -lBOO(\

1"'20" '/ ~-fV>, It

;,~~ It .Iv./' ~ -~ -il 400 is ~ 300

o.~ 200

E ~

E 100 ·x

- "'600

f\'d/h~ -300

f\,'It/A ~ h~

'-

Conduction angle

360' I I r---1

rWJ rW] J.LU L_J

Conduction angle

~ 0 0 50 100 150 200 250 300 350 400 450 b\


Figure 5 Maximum on"state characteristics 10000

o .

6000

4000

2000

1000

600

400

~ 200 0. E <t

~ 100

S u 60

* Ui 40 C o

20

10

A

/ I I

/ 125'C / /

/ f 25°C

-'" V ...........

~

1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Instantaneous On-State Voltage - Volts


• High dv/dt· 200 v//lsec • 5500 Amperes surge current capability • Blocking voltage up to 1200 volts • Excellent for rigorous thermal cyclic

applications



A 0.138 0.143 3.51 3.63 Dia. B 0.245 0.255 6.45 6.48 C 7.875 8.250 200.0 209.6 D 1.620 1.640 41.14 41.65 Dia. E 0.748 0.752 18.9 19.1 Dia. F 1.245 1.275 31.62 32.39 Dia. G 1.430 1.460 H 0.137 0.143

36.32 3.48

37.08 3.63

Dia. Dia.,0.075

J 0.530 0.554 13.46 14.07



30008GOF 800 900 30010GOF 1000 1100 30012GOF 1200 1300

Note 1:

To specify dv/dt other than 200V//lsec, enter appropriate letter in place of "G".

K ~ 300V//lsec H ~ 500V//lsec L

A

c:

c

Series 300

H

I

TO 200 AB

237



Forward Conducting

Max. RMS on·state current 'T (RMS) 470Amps Tc=87°C

Max. average on· state cur. IT(Av) 300 Amps Tc = 87°C

Ma;<. peak on-state voltage VTM 1.82 Volts 'TM = 1000 A (peak)

Max. holding current 'H 300mA

Max peak one cycle ITSM 5500 A Tc = B7°C, 60 Hz

surge current

Max.I't capability for fusing I't 125,000A'S t=8.3ms

Switching

Critical rate of rise of on-state current di/dt 500A/t..sec. TJ = 125°C

(note 2)




Thermal values



Blocking




Triggering


Max nontrlggering gate voltage



Average gate power





Note 1

Note 2

Note3

23B

td 3p.sec.

tq 150 p.sec. TJ = 125°C

ReJc O.OBoCrw

TJ - 40°C to + 125°C

T519 - 40°C to + 150°C

IORM 20mA TJ = 125°Cand VORM

IRRM 20mA TJ = 125°C andVRRM dv/dt 200V I p.sec. TJ = 125°C

VGT 3.0V

VGO 0.25V TJ =125°C

IGT 150mA

P GM 16W

PG(AV) 3W tp = 10 p.sec.

IGM 4.0A

VGM 20V

VGM 5.0V

Approximately 2.3 ounces (66 grams) 1000 ± 100 pounds In accordance with TO-200AB outlines


ITM = 100A, Vo = VORM ' VGT = 20Vopen circuit, 20 ohms-0.1 p.sec.

rise time

ITM = 250A, di/dt = 5A/p.sec., VR during turn-off interval = 50V min.,

reapplied dv/dt = 20V/p.sec., linear to rated VORM ' VGT = OV



130

~ 120

~ 110 ~ " 100

~ - 90

~ E 80

E 70 'x :l! 60

, ~ ~ .300~~

~ 1°'1 ·60° '~~ f\erll ~

ogoo

1800 {\or 11. • 120~

r- [iJ I'll I-,I-.:..J

Condut:tion ilngle

36001 I r-------1

:~ fffil J,Lu • I

L. _~

Conduction angle

~ '. "18001'\

"-·180°11

I DC

"-a 50 100 150 200 250 300 350 400 450 500 Average on-state current· Amperes

Figure 3 Maximum nonrepetive surge current at rated load conditions

700

~ 600 ~ ~ 500 «

c 400

~ 300 ()

a

'1-601 a I-

or---.. TJ = 125°C

a I'---- ,..... a

~ 200 ;: a

" c Cii 100 a ~

a £ 6 8 10 20 40 60 80 100

Number of Cycles


.09 .08

:,....--

.01 .1 Pulse Duration· Seconds

V

V

1.0

i-""

10 100

Series 300

Figure 2 Maximum power dissipation ~ 700

~ 1800

600 SI1 c

'i 500 I-.:..J

~ 400 i5

~ 300

"- 200 E ~

E 'x 100 Conduction

~ angle

50 100 150 200 250 300 350 Average on-state current - Amperes

Figure 5 Maximum on·state characteristics 10000

6000

4000

400 450 500

v 2000 / I--

V V

1000

600

/ I / /

400

125°C II II 200

25°C ~

'0 >

" '" 100

l'! '0 > 60 " ;0 ;; i::

40 0 ~ ~ 0

" c 20 l'! lij

~ 10 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Instantaneous on-state Voltage - Volts

239

I

Silicon Controlled Rectifiers 550 Amps RMS, VORM and VRRM Up To 600 Volts

• High dvldt· 200 vll'sec • 7500 Amperes surge current capability • Blocking voltage up to 600 volts • Excellent for rigorous thermal cyclic

applications



A 0.138 0.143 3.51 3.63 B 0.245 0.255 6.45 6.48 C 7.875 8.250 200.0 209.6 D 1.620 1.640 41.14 41.65 E 0.748 0.752 18.9 19.1 F 1.245 1.275 31.62 32.39 G 1.430 1.460 36.32 37.08

Not" ..

Dla.

Dla. Dia. Dla. Dia.

H 0.137 0.143 3.48 3.63 Dia., 0.075 J 0.530 0.554 . 13.46 14.07



35001GOF 100 200 35002GOF 200 300 35003GOF 300 400 35004GOF 400 500 35005GOF 500 600 35006GOF 600 700

Note 1:

To specify dv/dt other than 200Vll'sec, enter appropriate letter in place of "G".

240

K ~ 300VII'sec H ~ 500V/I'sec

L

A

c

Series 350

H

TO 200 AB



Forward Conducting

Max. RMS on·state current IT(AMS) 550 Amps Tc=86°C

Max. average on-state cur. IT(AV) 350 Amps Tc = 86°C

Max. peak on-state voltage VTM 1.48 Volts ITM = 1000 A (peak)

Max. holding current IH 300mA

Max peak one cycle ITSM 7500 A Tc = 86°C, 60 Hz

surge current

Max.I't capability for fusing I't 230,000A'S t=8.3 ms

Switching

Critical rate of rise of on-state current di/dt 500AIp.sec. TJ = 125°C

(note 2)




Thermal values



Blocking




Triggering





Average gate power





Note 1

Note 2

Note3

td 3 p.sec.

tq 150 p.sec. TJ = 125°C

ReJ~c 0.08°CIW

TJ - 40°C to + 125°C

Tstg - 40°C to + 150°C

lOAM 20mA TJ = 125°C and VOAM

IAAM 20mA TJ = 125°C andVAAM dv/dt 200V/p.sec. TJ = 125°C

VGT 3.0V

VGO 0.25V TJ = 125°C

IGT 150mA

PGM 16W

PG(AV) 3W tp = 10 p.sec.

IGM 4.0A

VGM 20V

VGM 5.0V

Approximately 2_3 ounces (66 grams) 1000 ± 100 pounds In accordance with TO-200AB outlines

Tc= 25°C unless otherwise noted

ITM = 100A, Vo = VOAM ' VGT= 20Vopen Circuit, 20 ohms-0.1 p.sec.

rise time

ITM = 250A, di/dt = 5AIp.sec., VA during turn-off interval = 50V min.,

reapplied dvfdt = 20V/p.sec., linear to rated VOAM ' VGT= OV

241



130

~ 110 1--+--"~~iiiII::.t--+ ~ ~ 100 g ~ 90

E 80 , E 70 .. ~ SO~~~~~~~~~~~~~~~~~ o

Average on-state current - Amperes

Figure 3 Maximum nonrepetltive surge current at rated load conditions

12000 o E ~10.000 E < E E

8000

:; 6000 U

~ ~ 4000

" c: iii 2000

o

f = sdHZ.l TJ = 125°C

r-. -- ;- -- -

1 2 4 6 B 10 20 40 6080100 Number of Cycles

Figure 4 Maximum transient thennal impedance

B

.09 .08

i .06

U .§b-' iii ' .04 ~ I .c: U I- 0

E ~ .02 .~ .g c: u ~ c: ~~ 0

.001

V

.01 .1 Pulse Duration - Seconds

242

,/

/

1.0 10 100

Figure 2 Maximum power dissipation 0700

~ 600 c: .~ 500 Conduction Q. angle

.~ 4001--1--+

1800

ri +--1f--t--+--+ i-'.J

o

Series 350

Conduction angle

350 400 450 500 Average on-state current - Amperes

FigureS Maximum on-state characteristics 10.000

8000

6000

4000

2000 ~

/ V

1000 800

600

400

0

E 200 " Co E <

100 I 80

" SO 'ii 1ii 40 i: o o , o

" c: l!I c: .. ;;; .5

20

10 .5

J/ I

1/ 125°C /,

r /250 C

I I I

I .8 1.0 1.2 1.4

Instantaneous on-state Voltage - Volts

1.5 1.8 2.0

seR's, Inverter

Silicon Controlled Rectifiersllnverter 63 Amps RMS, VORM AND VRRM Up To 600 Volts

• 1000 Amperes surge current capability • Blocking voltages up to 600 volts • 10 !-,sec turn-off time available • Primarily for forced commutated

applications • High dv/dt - 500 V/!-'sec available with

selection • Primarily for forced commutated

applications



A B .677 .683 17.19 17.34 C .745 .755 18.92 19.17 0 1.075 1.105 27.30 28.06 E .427 .447 10.84 11.35 F .135 .140 3.42 3.55 G .300 .513 7.62 13.03 H .220 .249 5.58 6.32 J .200 .300 5.08 7.62 K .120 3.05 M .590 14.98 N .065 .085 1.65 2.15 P .145 .155 3.68 3.93 R .061 .065 1.54 1.65 S .025 .030 .64 .76

Note 1: %-28UNF-2A



03902GRF 200 300 03904GRF 400 500 03906GRF 600 700

Note 1:

To specify dv/dt other than 200Vl!-,sec, enter appropriate letter in place of "G".

Note 2:

K ~ 300Vl!-,sec H ~ 500Vl!-,sec

To specify tq other than 10!-,sec, enter appropriate letter In place of "R".

244

P S 15!-,sec U s20!-,sec

Dia.

Dia. Dla.

Series 039

A

(TO-65)

TO-208AC

Silicon Controlled Rectifiers/Inverter (Note 1)


Forward Conducting

Max. RMS on·state current IT(AMS)

Max. average on-state cur. IT(AV)

Max. peak on-state voltage VTM

Max. holding current IH

Max. peak one cycle ITSM

surge current

Max. I't capability for

fusing

Switching

Critical rate of rise on-state diJdt

current (note 2)

Typical delay time (note 2) td

Maximum circuit commutated tq


Thermal values

Maximum thermal resistance RSJC

junction to case (DC)



Blocking

Max. leakage cu rrent IDAM

Max. reverse leakage IRRM

Critical rate of rise of dv/dt

off-state voltage

Triggering

Max. gate voltage to trigger VGT

Max. nontriggering gate voltage VGD

Max. gate current to trigger IGT

Max. peak gate power P GM

Average gate power PG(AV)

Max. peak gate current IGM

Max. peak gate voltage (forward) VGM

Max. peak gate voltage (reverse) VGM

Series 039

63 Amps Tc =97°C

40 Amps Tc =97°C

3.0 Volts ITM = 500 A (peak)

500mA

1000A Tc = 97°C, 60 HZ

4150 A'S t=B.3ms.

400AJp.sec. TJ = 125°C

2.0 p.sec.

10 p.sec. (R) TJ =125°C

15l'sec. (P)

20l'sec. (U)

0.35°CIW

- 40°C to + 125°C

- 40°C to + 150°C

12mA TJ = 125°C and VDAM

12mA TJ = 125°C andVAAM

200V/l'sec. TJ = 125°C

3.0V

0.15V TJ = °125C

150mA

10W tp = 10 p.sec.

2.0W

3.0A

20V

10V

245

Silicon Controlled Rectifiers/Inverter Series 039


Base

Header

Weight

Mounting Torque

Dimensions

Note 1

Note 2

Note 3

246

High strength copper stud and base with a 1/4-28 UNF 2A thread for

through mounting on a heat sink. Tin plating of base prevents

corrosion.


Approximately _635 ounce (18.0 grams)

30 In. Ibs. maximum

In accordance with TO-208AC outline


ITM = 50A, Vo= VORM' VGT = 12 Vopen circuit, 20 ohm 0.1 ",sec. rise

time

ITM = 150A, dildt = 5AJ",sec., VA during turn-off interval = 50V min.,

reapplied dv/dt = 20V/",sec. linear to ratedVoRM. VGT = OV

Silicon Controlled Rectifiers/Inverter


0.7

0.6

5 Steady State

4 ASJC .. O.3SoC/W r------

3 /' V

2

1 / O~ 0.001 0.01 0.1 1.0

Pulse Duration· Seconds


1000 e 8. 600 E <{ 400

200

100

60

40

20

10

/7 /.

12SoC 1/ /250C

I II I

10

o 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

Instantaneous On-State Voltage· Volts

Figure 3 Typical recovery current

10 a

of £:i; ITM = 300A

0:= - --~- - ~ 200A

-~ -- -- t.:"- 1-"""-a

:::~ ~ .:;:::::; ~ r-- 100rV a a 0

~~-I--a ----'TIAr - ___ TC .. 12S0C

a ---TC .. 25OC

100

5.0

10 20 30 40 50 60 70 80 90 100 Rate of Fall of Current, dildt - Amperes per J.!Sec.

Series 039

Figure 4 Maximum non repetitive surge current at rated load

e 11. E <{

1100

1000

900

800

700

600

500

r\

'" "" r-.., TJ '" 12SOC f = 60Hz

--..... ---400

1.0 2.0 4.0 6.0 8.0 10 20 40 60 80100 Number of Cycles

Figure 5 Gate characteristics

22

20

18

16

14

12

10

0.8

0.6

4.0

2.0

1.0

.'" / \ II. \

'" I\. / "'- "'-I

+:-qU"Od T<"'O';::; Aroa for High dl/dt Oporatlon 1

1 1 -J--I-t"

I 1

Ma~lmuml Peak boto I Power Dissipation'" lOW

"""" ...........

"'- -/20V,15n

'" Loedlino

1'-1 a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Gate Current - Amperes

FigureS Typical recovered charge

10 a

O~~ 0= -- ITM => 300A1'\'--.

--

I-

1.8 2.0

a - "\ 100A

f u

~ 1: 6. 8 ~ 4. . " a: a ~ ~ 2. g: t:: I- a 1.

200Ah -a

a O~ -a ---____ Tc-1250C

a ___ TC=250 C

10 20 30 Rate of Fall of Current. di/dt· Amperes per J.L5ec.

-- - -b fz'1-

~~ Q" -, 40 50 60 70 80 90 100

247

I


Figure 7 Sinewave peak current capability at Tc = 65·C

1000

600

400

200

100

60

40

20

10

t--t-t-

i--

~I= 10000

........ ......... .......... r--~

5000- 3000 1000 ~oo F= too SOH.t

~ 10 20 40 100 200 400 1000 2000 4000 10000

Pulse Width - J.lSec.

FigureS Sinewave peak current capability at Tc = 90·C

1000

600

400

200

100

60

40

20

10

--

-

-5000

- 'f~~O

II

"-r-..... ,

r:;00 1000 i= f 60Hz

3000

A 10 20 40 100 200 400 1000 2000 4000 10000

Pulse Width - J.lSec.

Figure 9 Sinewave energy per pulse

1000

600

400 ~ ,

200

100

60

40

20

10

=-- ...... -.... ' .....

-A I I I

"- "-

"" "'-

O'o~~

1.0 W8tt-5ec.1.±t-

"-... "",p., PU!i'

'" ~ ,-WJ

0.5

0.2

~ O.OI~ 0.02 O.O~, ~.",.

10 20 40 100 200 400 1000 2000 4000 10000

Series 039

Figure 10 Trapezoidal waveform current capability at Tc = 6S·C

1000

600

400

200

100

60

40

I--

r-I--I--

r--... r-.. ,

5000 3000

10000

IIII

, I'--

1000 400 l- f" 6 OH,

II 20

III dl/dt! I'OOA/~ec. n 10

10 20 40 100 200 400 1000 2000 4000 10000 Pulse Width -l-tSec.

Figure 11 Trapezoidal waveform current capability at T c = 90·

1000

600

400

200

100

60

40

I'--...........

3000 5000

.111

.......

10aO 400 - f 60Hz

1111 20

100~~1 dl/d,· I,bb~/,,sec. n 10

1 0 20 40 100 200 400 1000 2000 4000 10000 Pulse Width - iJ$ec.

Figure 12 Trapezoidal waveform energy per pulse

1000

600

400

200

100

60

40

20

1 0

- "-

-- ~ "-

=n ~ di/dt =' 100A/j.tSec.

0'10 ' ?'I°A,

5.0Watt-Sec:~ Per Pulse

"-........ "'" ~

~"'" t 1.0

0.5

TTl ~. O.O~ 0j'

frO 9"F~

10 20 40 100 200 400 1000 2000 4000 10000 Pulse Width - J.lSec. Pulse Width· J,lSec.

248

Noto: Test conditions for Sine and Trapezoidal curves: Snubber: A'" 200 C = O.25J.lF

Vo '" 400V

Silicon Controlled Rectifiers/Inverter 125 Amps RMS, VDRM AND VRRM Up To 600 Volts

• High dl/dt - 800 A/I-'sec non-repetitive • 1800 Amperes surge current capability • Package conforming to either

TO-209AC or TO-208AS outline • Blocking voltages up to 600 volts • 10 I-'sec turn-off time available • Primarily for forced commutated

applications



A B 1.050 1.060 26.67 C 1.161 0 5.850 6.144 149.10 E 6.850 7.375 173.99 F .797 .827 20.24 G .276 .286 .701 H .948 J .425 .499 10.80 K .260 .280 6.60 M .500 .600 12.70 N .140 .150 3.56 P .295 R .900 S .225 .275 6.48 T 1.750 U .370 .380 9.40 V .213 .223 5.41 W .065 .075 1.65 .

X .215 .225 5.46 Y .290 .315 7.37 Z .514 .530 13.06 AA .089 .099 2.26

Note 1: '12-20 UNF-2A Note 2: Full thread within 2'12 threads

Maximum

26.92 29.49

156.06 187.33 21.01

7.26 24.08 12.67

7.11 15.24

3.81 7.49

22.86 6.99

44.45 9.65 5.66 1.91 5.72 8.00

13.46 2.51

Notes

2 Dla.

Dla.

Dla. Dla.

Series 079

T0-209AC (10-94)



07902GRA 200 300 07904GRA 400 500 07906GRA 600 700

Note 1:

To specify dv/dt other than 200Vll-'sec, enter appropriate letter In place of "Gu.

Note 2:

K C?: 300V/I-'sec H C?: 500VI/Lsec

To specify tq other than 10l-'sec, enter appropriate letter In place of "Ru.

Note 3:

P S 15/Lsec U s20/Lsec

To specify package designation other than standard lead, enter appropriate letter in place of "N'.

B = Insulated Lead o = Flag Terminal C = Top Stud (consult factory)

249

Silicon Controlled Rectifiers/Inverter (Note 1)


Forward Conducting

Max. RMS on·state current IT(RM8) Max. average on-state cur. IT(AV) Max. peak on-state voltage VTM Max. holding current IH Max. peak one cycle IT8M surge current

Max.I't capability for

fusing

Switching

Critical rate of rise on-state dildt

current (note 2)

Typical delay time (note 2) td

Maximum circuit commutated tq


Thermal values

Maximum thermal resistance RSJC

junction to case (DC)



Blocking

Max. leakage current IORM Max. reverse leakage IRRM Critical rate of rise of dvldt

off-state voltage

Triggering

Max. gate voltage to trigger VGT Max. nontriggering gate voltage VGO Max. gate current to trigger IGT Max. peak gate power PGM Average gate power PG(AV) Max. peak gate current IGM Max. peak gate voltage (forward) VGM Max. peak gate voltage (reverse) VGM

250

Series 079

63 Amps Tc =97°C

40 Amps Tc =97°C

3.0 Volts ITM = 500 A (peak)

500mA

1000A Tc =97°C, 60 HZ

4150 A'S t=8.3 ms.

400AJpsec. TJ = 125°C

2.0 psec.

10 !,sec. (R) TJ = 125°C

15 psec. (P)

20 psec. (U)

0.35°C/W

-40°C to + 125°C

- 40°C to + 150°C

12mA TJ = 125°C and VORM 12mA TJ = 125°C andVRRM 200Vlpsec. TJ = 125°C

3.0V

0.15V TJ = 125°C

150mA

10W tp = 10 psec.

2.0W

3.0A

20V

10V

Silicon Controlled Rectifiers/Inverter Series 079


Base

Header

Weight

Mounting Torque

Dimensions

Note 1

Note 2

Note3

High strength copper stud and base with a 1/4-28 UNF 2A thread for

through mounting on a heat sink_ Tin plating of base prevents

corrosion_


Approximately .635 ounce (18.0 grams)

30 in.lbs_ maximum

In accordance with TO-208AC outline


ITM = 50A, Vo = VORM' VGT = 12 V open circuit, 20 ohm 0.1I'sec. rise

time

ITM = 150A, di/dt = 5A/l'sec., VR during turn-off interval = 50V min.,

reapplied dv/dt = 20V/l'sec. linear to rated VORM• VGT = OV

251


Figure 1 Maximum non repetitive surge current al rated load

2000

1750

~ ........

~ 1500 ~

I----E 1250

" c 1000

f .. 60Hz TJ'" 125°C

~ u 750

500

250

o 1.0 2.0 4.0 6.0 10 20 40 60

Number of Cycles

Figure 2 Maximum forward on-state characteristics VI 10000 ~ 6000 0. E

" c ~ 1000 u 600 ~ 400

~

~ o

200

100

60 40

20

10 o

12SoC /250 C

I 1.0 2.0 3.0

Instantaneous On.state Voltage - Volts

Figure 3 Typical recovery current

100

4.0 5.0

40 ~ O-'TM~ == T\ '"(~~=~~ - " ,

20

! 10 u"

U ::~ ~ " ~ B 2.0 '6. ES ~ ~ 1.0

-TC=1250 C ___ ~A ~ d:=o1"lJ.. TC.2SOC _ ~;:::;:~~:50A

';"'V / ....... V V::~

~~ ~ 1.0 2.0 4.0 6.0 10 20 40 60

252

Rate of Fall of Current, di/dt - Amperes per ¢3ec.

100

6.0

100

Series 079

Figure 4 Maximum transienllhermallmpedance

1.0

0.6

0.4

g 0.2

h .Ea> 0.1

§ ~ 0.06 ~u 0.04 ';:B c C

.~ 'B 0.02

~~ 0.01

./

0.001

V

0.01 0.1 purse Duration - Seconds


50

45

RSJC -1.0

I I

O.30 CIW

10 100

40

35

30

25

20

15

10

5.0

/ /

\ /~Bxlmum Peak Power I. I ~ DISSIPation,. 100W@Tp = S,uSec. -

/ "-....... 25W@lTp .. _~

\ / \. 5mser- ......... ""*.;ecommended r--~~~:e~

o ~20V. 20.0: Loadline

o 1.0 2.0 3.0 4.0 5.0 6.0 7.0 B.O 9.0 10 Instantaneous Gate Current - Amperes

Figure 6 Typical recovered charge

100~~DD -ITMT\ ~Qrr 60r, ~d1/dt 40=~

- --1--+-L+11+~

D_Tc=1250C --- -ITM=2_00A~

~ TC=25 0C -- -C-P

6 10~~~~~~~~~~~~~,~OO§~~«~~~~ ¥ " 6.0

~ 14.0 .l' il 1-_-,: .... _~v~b+-'H+++.J,;...:::: ... ~'7-'q~~ .. OA

l t 2.0 F---~--=-+-+--bi-'f.~::........r---+I-+I+++ I I ttl I- 0 1.0'-::----::'::-"""""v'--:"~::':::'....L..l-f:;---~--.1.....::':::-'-;:';:-l...l..:~.

1.0 2.0 4.0 6.0 10 20 40 60 100

Rate of Fall of Current. dildt . Amperes per ltSec.


Figure 7 Sinewave peak current capability at T c = 65°C

1000

600

400 ~

il E 200

'" 100

60

40

20

10

-5000

10000

~

'\..

3000 1000 4001- f'" 60Hz

Snubber: A = 20n C = O.2S,uF

VD "" 4QOV TC = 65°C

10 20 40 '00 200 400 1 000 2000 4000 10000 Pulse Width - pSec.

Figure 8 Sinewave peak current capability at T c = 90°C

1000m~RII 600

400 "

~ " ! 200 F=l::tiffii'# ......... '3t0040""R, 0-n00~4::::00:t-tt:f 'I T!-ii~ToH'

~ 100~~~~~~~5~0~00~~~~~~~~~~~ ~ 60 10000 U Q) 40 Snubber:

~ 1---'--Y+I+l-If---+-t-1+t++t+---+ A = :20n

~ 20 -nt-t1+1f---+--++++tttt--+~~ ~'~~6~ ~ 10L-~'--~~~~ __ L-~-L~ll-__ ~T~C_=~9~0~OC~

10 20 40 100 200 400 1000 2000 4000 10000 Pulse Width - .uSee.

Figure 9 Sinewave energy per pulse

~ 15.

10000

6000

4000

E 2000

'" ~ 1000

u 600

2!. 400

Snubber: R 20n C O.2S,uF Vo = 400V

~ o 200

~ n 100

10 20 40 Pulse Width - IlSec.

'" o.o~ 0.1

100 200 400

1 0 ..... W~~~~:~~8

5.0 N

i'-. 3.0

0.3 0.5, I"\.:~ 1000 2000 4000 10000

Series 079

Figure 10 Trapezoidal wavefonn current capability at T c = 65°C lOOOFBIRIRII dl/dt - 100A/J.LSec.

600

400

20

10L--L-L~~~ __ ~~~LU~~~~~~ 10 20 40 100 200 400 1000 2000 4000 10000 Pulse Width - .uSee.

Figure 11 Trapezoidal wavefonn current capability at T c = 90°

1000

600

400

i E 200

'" i'

di/dt 100A/pSec.

l"-

f 60Hz 400

100

60

40

1000

20 r-JL 10

10 20 40 Pulse Width - j.tSec.

Figure 12

Snubber:

30100 A = 20n

C = O.2S,uF Vo = 400V TC = 900 C

100 200 400 1000 2000 4000 10000

Trapezoidal wavefonn energy per pulse 1000

600

400 ~ 15. E 200

'" 100

60

40

20

10

- r-- .......... '--I- ""'- i'

Snubber: R 20n C 0.25~F

Vo = 400V

Slope = .± JL dl/dt = 100A/,uSac.

10 20 40 100 200 400 Pulse Width . ~ec.

3.0 Watt-Sec, Per Pulse

I .......

~ ,,'" 1.0

0.5

0.3

" 6:05 O'K r'h-1000 2000 4000 10000

253


Disc thyristors lor 200 V to 600 V; ITRMS = 250 A; tq = 151's, 18 I's

Application Primarily for self-com mutated converters of all types, e.g. Inverters, choppers, etc.

Chip Fully diffused silicon Current and heat transfer: noble metal pressure contact

Case Disc-type case, type 2 a as per DIN 44 499 (draft) Contact surfaces nlckelplated, ceramic insulation

Connections Gate line yellow, 230 mm In length, included in delivery upon request

Polarity as stamped

Heat sinks

Type KK31') KK32') Ordering Code

DesIgnation as per DIN 41882

Material Alum. Alum. Weight 500 9 950 9

Type VORM q q

VRRM dvdt = 200 VII'S dvdt = 200 VII'S

200V BStH6113f BStH6113g 300V BStH6120f BStH6120g 400V BStH6126f BStH6126g 500V BStH6133f BStH6133g 600V BSTH6140f*) BStH6140g*)

*) on req uest ') Available only with component fitted

254

Series BSt H 61

Gate flat plug as per DI N 46244

A2.B x 0.5 HK G G

Dimensions in mm

KK33') KK34') LK182)

C66055-A 6105-B4

KO,55 Alum. Alum. Alum. 730 9 1200 9 1600 9

q t = 181's q

dvdt=500 VII'S dvdt = 500 VII'S

BStH6113fS9 BSTH6113gS9 BStH6120fS9 BStH6120gS9 BStH6126fS9 BStH6126gS9 BStH6133fS9 BStH6133gS9 BStH6140fS9*) BStH6140gS9*

Silicon Controlled Rectifiersnnverter Series BSt H 61

Blocking characteristics Secondary conditions Maximum off-state or lo,/R 9, = 140° C, for 0.67 VORM, 0.67 VRRM reverse current lOrnA = 140° C, for VORM, VRRM

Forward blocking characteristics Maximum rms on-state current hRMS(I) 250A

Surge current hSM(I) l,850A 9,= 25°C \ half sine wave l,650A = 140°C 150Hz, VR = OV

i't value fi'dt 17,200A2s 8,= 25°C}t_l0 iii -OV 13,700AZs = 140°C - ms, R-

10,OOOA2s 9,= 25°C} t= 2t05ms 8,OOOA2s =140°C VR=OV

Threshold voltage VITO) 1.03 V } equivalentstraightlinefor9, = 140°C Slope resistance rr 1.65m!"!

Dynamic values, switching applications Latching current IL 0.5A 9,= 140°C } Vo =18V,

1.0A = 25°C IG= 1 A,diG/dt= 1 A/(J.s, = _40°C tgt = 15(J.s

Delay time tgd 2.2(J.s IG = 1 A } diG/dt= 1 A/(J.s,9,= 25°C 1.5(J.s IG = 3A Vo = 0.5 VORM, L/R = 2 tgd

hM = 16A

Critical periodical rate (di/dt)cr 150A/(J.s 9, = 140°C,,= 50 Hz, Vo = 0.67 VORM of rise of on-state current with addi- Long pulse with linear current rise to tionalload from an RC snubber hM=480A

Additionally permissible peak current of a discharging RCsnubber, hM(RC) = 100A Drive required IG ~ 1 A,diG/dt~ 1 A/(J.s

Periodical current (peak value) of a hM(RC) 100A ""-Id;/d~" 1 discharging RC snubber Drive required 9, ;;;; 140° C IG ~ 1 A,diG/dt~ 1 A/(J.s f= 50Hz

50A di/dt;;;; 10A/(J.s Vo = Drive required 0.67 VORM IG'" IGT

Critical rate of rise of off-state (dv/dt)cr 200V/(J.s 0.67 VORM

l 9; = 140°C

voltage (Type BSt H 61 ... ) l,OOOV/(J.s 0.33 VORM Linear (Type BSt H 61 ... S 9) 100V/(J.s 1.0 VORM voltage rise,

500V/(J.s 0.67 VORM control circuit 2,OOOV/(J.s 0.33 VORM open

Circuit com mutated turn-offtime to 9, = 140°C,-di/dt= -10A/(J.s (Type BSt H 61 .. f) 15(J.s VR = 0.67 VRRM, Vo = 0.67 VORM (Type BSt H 61 .. g) 18(J.s dv/dt= 50V/(J.s, IrM = 160A

Chip current fully risen before commuta-tion

255


Gate circuit ratings Minimum gate trigger current

Minimum gate trigger voltage

Maximum gate non-trigger current

Maximum gate non-triggervoltage

Maximum admissible gate current

Maximum admissible gate power losses

Maximum negative gate voltage

Thermal ratings

Maximum continuously admissible junction temperature

Operating temperature range


100mA 250mA 450mA

1.0V 1.5 V 2.0V

5mA

0.2V

lOA 3A

PGAV(I) 20W

10V

8j(1) 140° C

8j -40to +140'C

8, -40to +150°C

Thermal resistance for constant current R'hJC

(excluding heat transfer) 0.17KjW 0,30KjW 0.40KjW

Thermal resistance case to heat sink

Mechanical ratings

Contact pressure

Leakage path

Airpath

Weight


Humiditycategory

256

R'hCK 0.015 KjW O.030KjW

F 2000 N:': 18% 5mm

5mm

60g

50 mjs'

C

Series BSt H 61

9,= 140°C } Vo~ 2V 25°C

= -40°C

8j = 140°C } Vo~ 2V 25°C

= -40°C

8j = 140°C, Vo = 2V = 140°C, Vo;:;; 0.5 VORM

8j = 140°C, Vo;:;; 0.5 VORM

peak value rmsvalue

maximum value

peak value


double-sided cooling cooling on anode side cooling on cathode side

double-sided COOling} see assembly one-sided cooling instructions

set point value

anode-grid

anode-grid

at 50 Hz, without heat sink

according to DIN 40040


Characteristics Forward characteristics (scatter bands) Parameter: junction temperature 8j

400 iT A ! l50

lOO

250

200

150

100

50

H61

Il/

- ~,.140'C -- ~,-25'C

~ ~ ~ U U ~ U U U UVU --VT

Transient thennal resistance for contrast current

0.4

Z(lhlJC ~ t O.l

02

O. 1

Thennal resistance .a.r

H61 Illr111~-

ollcathodeside onanodeside

double-sided

100 10' --I


5 H61

0.1

0 \ 1

~mtA~ '\ ' . r--------5 Ai' - -

\ "" I-=-r--:

I~ I-50Hz

0

r~V'\ I'---.. 5rl A r

"'--. r-- t--.......... r-.

0 l'iOHZ

0.1

0.0

lO 90 120 150 .1 180 60 --).

Series BSt H 61

Input characteristics (scatter band) with trigger ranges and power dissipation hyperbolae

H~l , 10' A

20W 40W= == 'G 5

! 10

5 °

-,

,

== -

II'- ....... EO lOS lW

rt -40'C

146';6 j

/

lOW 5W

2W -- ~ =

7 V --v,

Difference between transient pulse thennal resistances and transient thennal resistance for constant current, pulse currents 40 to 60 Hz

0,2

~ Z{th)p-Z(thl]C

t

H61

IIIII ~v 60'

IIIII

4

O. 1 - ~; 120,:11

~AV t;0!v - 180"1 180'

A' III I III

10° s 10' --I

"Analytical function" for dc:

Z(th)JC = i:rdl-e-f) i-1

Double-sided Cooling Cooling cooling on anode side on cathode side

i r,[K/W) • [s) r,[K/W) • [s) r,[K/WI • [sJ

1 0.04504 0.2BB57 0.16935 1.95143 0.27361 2.30535

2 0.08282 0.05366 0.09240 0.05174 0.08815 0.05015

3 0.01222 0.00979 0.02149 0.00414 0.02149 0.00414

4 0.01849 0.00237 0.00532 0.00110 0.00532 0.00110

5 0.01143 0.00051 0.01143 0.00051 0.01143 0.00051

Formulae for determining the total thermal resistance

R'hJA = RthJC + RthCA + Llr Z(th)JA = Z(th)JC + Z(th)CA

Zith)p(JA) = [Z(th)p- Zith)JC] + Z(th)JA

RthCA and Zlth)CAsee section "Heatsinks"

257


Disc thyristors for 200 V to 600 V; ITRMS = 550 A; tq = 151's, 18 I's

Series BSt L 61

Gate flat plug as per 01 N 46244

A2,Bx 0,5 Application Primarily for self-commutated converters of all types, e_g. inverters, static converters, choppers, etc.

HK G G


Case Disc-type case, type 2 a as per DIN 44 499 (draft) Contact surfaces nickelplated, ceramic Insulation •

Connections Gate line yellow, 230 mm in length, Included in delivery upon request

Polarity as stamped

Heat sinks Type KK31 ') KK32') KK33') KK34') NK12') NK15') Ordering Code Designation as per DIN 41 882

Material Weight

Type VORM

Alum. 500 9

t = 151's q

Alum. 950 9

Alum. Alum. Alum. Alum. 730 9 1200 9 2100 9 2400g

t = 181's q t = 151's q

VRRM dvdt = 200 VII's dvdt = 200 VII's dvdt=500 VII's

200V BStL6113f 300V BStL6120f 400V BStL6126f 500V BStL6133f 600V BSTL6140f*)

Current carrying capacity Double-sided cooling

Frequencyf

50 Hz 250 Hz 500 Hz

1000 Hz 1500 Hz 2000 Hz 3000 Hz 4000 Hz 5000 Hz 6000 Hz

780A 780A 780A 780A 740A 675A 555A 450A 365A 305A

BStL6113g BStL6120g BStL6126g BStL6133g BStL6140g*)

780A 780A 780A 780A 725A 650A 525A 425A 325A 260A

Recovery voltage VR appro 1V 300V Voltage before turn-on Vo 300V Rate of rise of on-state current di/dt 50 AIl's

Case temperature -9c 60°C

BStL6113fS9 BStL6120fS9 BStL6126fS9 BStL6133fS9 BStL6140fS9*)

1100A 1100A 1100A 1100A 1100A 1150A 1080A 900A 700A 585A

1100A 1100A 1100A 1100A 1100A 1100A 1070A 800A 665A 560A

appro 1V 300V 300V

NK16') KD20 .. V')2)

Alum. Copper 2700 9

t = 181's q

dvdt = 500 VII's

BSTL6113gS9 BStL6120gS9 BStL6126gS9 BStL6133gS9 BStL6140gS9*)

~M ~

3100A 2590A 2030A 1700A 1400A 1080A 880A 710A

3100A 2590A 2030A 1680A 1380A 1050A 840A 665A

appro 1V 300V 300V

*) on request. Available only with component fitted. 2) For complete designation see chapter on heat sinks.

258


Blocking characteristics Maximum off-state or reverse current

Forward blocking characteristics Maximum rms on-state current

Surge current

Ftvalue

Threshold voltage Slope resistance

15mA

fTRMS I'I 550 A

hSMIII

fFdt

VITOI rr

4,460 A 3,870A

100,000A's 75,000A's 47,000 A's 34,000A's

0.99V 0.685mf!

Dynamic values, switching applications Latching current fL 0.5A

LOA

Delay time

Critical periodical rate of rise of on-state current with additionalload from an RC snubber

Periodical current (peak value) of a discharging RC snubber

Critical rate of rise of off-state voltage (Type BSt L 61 ... )

(Type SSt L61 ... S 9)

Circuit commutated turn-off time (Type SSt L61 .. f) (Type SSt L61 .. g)

tgd 2.2~s 1.5~s

(di/dt)c, 150A/lls

IrMIRC)

(dv/dt)c,

100A

50A

200 V /Ils 1,00OV/lls

1 OOV /IlS 500V/lls

2,000V/IlS

151ls 181ls

Series BSt L 61

Secondary conditions !J, = 140° C, for 0.67 VORM, 0.67 VRRM

= 140° C, for VORM, VRRM

.9,= 25°C }halfsinewave =140°C 50Hz,VR=OV

.9;= 25°C}t_l0 V. -OV = 140°C - ms, R-

.9;= 25°C}t=2t05ms = 140°C VR = OV

} equivalentstraightlinefor,9; = 140°C

.9; = 1400C} Vo = 18V, = 25:C fG=lA,diG/dt=lA/~s, = -40 C t9t = 15~s

iG = 1 A }diG/dt= 1 A/~s,.9j= 25°C fG = 3A Vo = 0.5 VORM, L/R = 2 tgd

IrM = 35A

,9, = 140°C, f= 50Hz, Vo = 0.67 VORM Long pulse with linear current rise to IrM= 1050A Additionally permissible peak currentof a discharging RCsnubber,ITMIRC) = 100A Drive required fG;;:; 1 A,diG/dt;;:; 1 A/Ils

dqdt=(dqd~~ I Drive required fG;;:; rA,diG/dt;;:; 1 A/Ils

di/dt~ 10A/lls Drive required fG "" fGT

0.67 VORM .9, = 140°C 0.33 VORM Linear 1.0 VOAM voltage rise,

.9; ~ 140°C f = 50 Hz Vo =

0.67 VORM

0.67 VOAM control circuit 0.33 VORM open

!J, = 140°C,-di/dt=-10A/lls VR = 0.67 VRRM, Vo = 0.67 VORM dv/dt=50V/lls,IrM = 350A Chip current fully risen before commutation

259

Silicon Controlled Rectifiersllnverter Series eSt L 61

Gate circuit ratings Minimum gate trigger current IGT 100mA S; = 140°C }

250mA = 25°C Vo!1:;2V 450mA = -40°C

Minimum gate trigger voltage VGT 1.0V S;= 1400C} 1.5V = 25°C Vo !1:; 2V 2.3V = -40°C

Maximum gate non-triggercurrent IGO 20mA S; = 140°C, Vo = 2V 10mA = 140°C, Vo;;; 0.5 VORM

Maximum gate non-trigger voltage VGO 0.2V S; = 140°C, Vo ;;; 0.5 VORM

Maximum admissible gate current IGM lOA peak value IGRMS 3A rmsvalue

Maximum admissible gate power PGAVII) 20W maximum value losses

Maximum negative gate voltage VGRM 10V peakvalue

Thermal ratings Secondary conditions

Maximum continuously admissible junction temperature Sill) 140°C

Operating temperature range fJ; -40to +140°C

Storage temperature range S, -40to + 150° C

Thermal resistance for constant current RthJC 0.095K/W double-sided cooling (excluding heat transfer) 0.180K/W cooling on anode side

0.200K/W cooling on cathode side

Thermal resistance RthCK 0.015K/W double-sided cooling I see assembly case to heat sink 0.030K/W one-sided cooling f instructions

Mechanical ratings

Contact pressure F 3000 N ~ r8% setpointvalue

Leakage path 5mm anode-grid

Airpath 5mm anode-grid

Weight 60g

Vibration resistance 50 m/s2 at 50 Hz, without heat sink

Humiditycategory C according to DIN 40040

260

Silicon Controlled Rectifiers/lnverter

Trapezoidal pulse operation

Double-sided cooling

Pulse shape

di/dt ... Rateofcurrentrise f ..,. Frequency ... 11T hM ... Maximumdcpeakcurrent VR ... Recovery voltage Vo ... Voltage before turn-on tp = Pulse duration Is = Idle period

25A/flS

CSEcircuitry (see explanations)

R' C'

4 1 R'- s,sn C'- O.47~F

Graph for calculating power dissipation Ptot = W - f Parameters: d/'dt =25A/!'s, Vo, VA circuitry W = energy loss per pulse •

A

10'

10' L.LLLLL __ -"'-"""-'-L.:l. .... -J~L..-:"'--''''-...x--'''--LN..L-''' 5 10 3 10 4 J.ls

Maximum dc output current peak value (trapezoidal current with tp =Tl2) as a function of frequency

-_t,

Parameters: d/ldt =25 A }'So Sj ,Vo, VA circuitry A •

800 L61. n 2SAIIIS .14n

I'M 700 ~mUJ/tii~I~-~'im;::tt~~~~~wt=fl \\~-\~.9ti!::::6t~tt"W t 600 ~c=85 °C - - ~..... \,

~

3oorttTH----r~_+~hHH+~~.~~~~-r~}4++~ ZooH++++--

10' o,limitingvalueoftrapezoidalcurrent

---V/ '\ ,

10' _f

101, Hz

Series BSt L 61

Maximum dc output current peak value as a function of pulse duration tp Parameters:d/'dt =25A/!'s, 9j =60·C, Vo, VA f,

A circuitry • L61,J'L,2SAllJs,60·(

~~H----C- Y~T+++H----r:=~~~ : ~~H---- /'--F"\-'oo .... --t-tt+t----+=i::~ :~

10'.~~ f=50Hz 500Hz 250 Hz

-_t,

Maximum dc output current peak value as a function of pulse duration tp Parameters: d/I dt = 25 A}'So Sj = 85·C, V 0, VA

A circuitry .

10 ,

A

L61,Jl,2SA~" 8S·( ,11n

II

~ ~t<-z: " I"-~ tl' r--.... ,.

-_t, Maximum dc output current peak value as a function of pulse duration tp Parameters: d,/d/=25A/}'So fJ. = 110·C, Vo, VA circuitry ) •

L61, n.1SAIII$,110·C Un

1+t+1+----+--l-I-++lH+l---+ - - zoov 0 -400V 0

1+t+I+---r~:-::-l-I-++l-ttl----+- - - zoo V zoo V -400V 4JJOV

-_t, 261


Sinusoidal pulse operation

Cooling on anode side

Pulse shape CSE circuitry (see explanations}

R' C'

~J R'~ 6,811(3,911) C _ 0,47 ~F (0,68 ~F)

Series BSt L 61

Maximum dc output current peak value as a function of pulse duration tp Parameters: ge = 60°C, Vo, VR, f, circuitry

L61 .Q 60·C1AI , ,

-- r....., ....... ~ '~ 'I'-

30,

f = Frequency = lIT IrM = Maximumdcpeakcurrent VR = Recoveryvoltage Vo - Voltsgebeforeturn-on tp = Pulse duration

More CSE circuitry (values in brackets) 10 may be necessary jf the commutation voltage istoo high 'R " 'i:s~Hzl~H

~ ~~HZ z 2 kH '" 500 Hz" 250H2- f=S Hz

v, v,

ts = Idle period

Graph for calculating power dissipation Ptot = W - f Parameters: Vo, VR, circuitry W = energy loss per pulse

A

7~++p===~~~~~16~"~A~====~~~~v.~tl

262

o o

200 V 400 V

I

-_I,

2

200V

20~11 - 400V

I - 200V - 400V 400 V

5 10' 10' -_t,

Maximum dc output current peak value as a function of pulse duration tp

AParameters: Se =85°C, Vo, VR,f, circuitry L61ABSO((Al

v, -20DV

400V -- --200V

--..... -400V

-""" - >- ~

V,

0 0

200 V 400 V

10' f'-- ....... , 1'" ---pt' 105kHz 1 k z 500 Hz'" 250Hz- f=50H

4kHz- f'2 kHz Hz I

~rz III I 1,5

5 10' 10' -_I,

Maximum dc output current peak value as a function of pulse duration t Parameters: [}c = 110°C, Vo, VR f, circuitry

A ' LM,A,110-C[Al

20DV 400 V 200 V .00 V

1010 J.ls

.11n

10' LLLLLL_....L_'-L.L.LJ..LL'-_..L~~-'L~u.J 5 1(j 103 104 jJS

Silicon Controlled Rectifiersllnverter Series SSt L 61



Maximum dc output current peak value as a function of pulse duration tp

A Parameters: Bc = 60°C, Vo, VR, f, circuitry

Pulse shape CSE circuitry 9 l61,..o.. ~o·c .25n

f = Frequency = lIT IrM = Maximumdcpeakcurrent VR = Recovery voltage Vo = Voltage before turn-on tp = Pulse duration ts = Idle period

(see explanations)

R' C·

~1 R' - 6.B n (3.9 n) C' - 0.47 ~F (0.68 ~F)

More CSE circuitry (values in brackets) 10 may be nocessary if the commutation voltage is too high

1


A

v, o lTM

o 200 V 400 V

I

10

10' -_t,

-...... ""''' ..........

"'-

·Ef~ ~ 250Hz (=50 z ] 3~ 1.5 kH:z1 kHz 4kHzt--2 kHz

5kHz -~~ 6kHz LJ-

,

V, - 200V 0

II - 400V 0

II - 200V 200 V - 400V 400 V

S 10' 10' -_to

Maximum dc output current peak value as a function of pulse duration tp Parameters: Bc = 85°C, Vo, VR, f, circuitry

l61.D.. IS·

r- r---~=~- r-i' I'---

;::-..

.26n

~ i' 1kHz 250Hz f=50Hz

~kHZ "kHz kHz t----2 kHz

5 kHz Vo V,

-W' -- 200V 0 - 400 V 0

II III 200 V 200 V - 400V 400 V

10' 10' -_to

Maximum dc output current peak value as a function of pulse duration t Parameters: Be = 110°C, Vo, VR, f. circuitry

L61.a 1'IQ°( .. IT II ;:p-

I--l----... ~

".

10 , i' r--..

-- ~4ffi: 1kHz SooHz- 2S0Hz- YSOHz

~3kHz tSkHz

~ 1-= 4kHz -II III

SkH' Vo VA ~ I -- 200V 0

HI i - 400 V 0 -- 200 V 200 V

i - 400V 400 V 10

5 10' 10' __ to

263

Silicon Controlled Rectifiers/hwerter

Thermal resistance Ar Parameters: frequency t, current waveform

0.12 K

Jr W

I 0.10

O.OB

0.06

0.04

0.02

1\ \

"-1\

\ b..

~jJv " I'--.

f-SOHz I 30 60

l61

I I I

~uB . ). :--r '.50H;

"-...... "'i---

! -r----t---i i

90 120 . 150 .1 180 --).

Peak reverse recovery current IRRM (lower limit of scatter range) Parameters: on-state current, rate of current rise, 8, = 140°C

90r--, __ ,-__ ,--, __ ~l~61 __ ,--, __ ,-__ ,-~6'

A

Recovered charge Q IT (lower limit of scatter range) Parameters: on-state current, rate of current rise, 8; = 140°C

lOa ~As

90

0" 80

1 70

60

50

40

30

10

10

0

264

l61

I, I ~' di/d,

h"'f--I---+--I---+--- 0"

0 10 10 40 50 60 70 80 AI~s lOa _diJdt

Series SSt L 61


Z(thlJC = tri (1 -e-~I i_ 1

Double-sided Cooling Cooling cooling onanodeside on cathodo side

; ,,(KIWJ " (sJ ,,(KIWJ " (.J " (KIWJ " [.J I 0.03873 0.32498 0.12191 1.56818 0.14157 1.48215

2 0.03636 0.04335 0.03895 0.04217 0.04057 0.04263

3 0.01073 0.00685 0.00843 0.00709 0.01013 0.00472

4 0.00480 0.00135 0.00633 0.00181 0.00335 0.00125

5 0.00438 0.00040 0.00438 0.00040 0.00438 0.00040

Formulao for determining the total thermal resistance

RthJA = RthJC + RthCA + .1r Z(thIJA = Z(thIJC + L(thiCA

L(thlp(JAI = [Z(thlp- Z(thIJC) + Z(thIJA

RthCA and ZithlCA see section "Heat sink,,"

Peak reverse recovery current IRRM (upper limit of scatter range) Parameters: on-state current, rate of current rise, 8, = 140°C

1

150 A

lOa

50

a

l61 .,

r--f- rT=I~~~~",-- ~ 400A ."-..... ~ V 300A "'-- I ........ ~ ~ :..-::::: 100A "- '.... .":---~ :::;:::;::: ~ :.--: 150A '.... "-..... ~ ~ p-: ...... ...-I~~~",-- -....,. ~ ;....- ::.--50A ~ :-IA": ~ V ~ .~dl I--~

Ir t '--.,. , ,/ It~

r--r--

a w m w ~ m w ro 00 A~s m -dUdt

Recovered charge QIT (upper limit of scatter range) Parameters: on-state current, rate of current rise, 8, = 140°C

0"

300 ~As

I 200

100

a

LSI . ,

r-- IT =1000 A

I--1--8OOA

I--l--~ooA-.. ":---, ~ 400A ........ '" ~ ~ --r--I-- 300A "-..... I ........ ::--.... ~ --r- I--I--1--100A

1'--.'.... ="-~ ::.:::-!---- -r--1--150A

r--1--100 A I"'--- ~ p- -r-- 75A, ~ I>.c:: p-I-- 50~ ~ :::,.-

~ :..>< ~ :0-

~ -

/ IT , -

0" -a m m m ~ m 00 ro 00 ~ m

_di/dt


Characteristics Forward characteristics (scatter bands) Parameter: junction temperature .9,

0 50 A

IT 450

1 400

350

300

250

200

150

100

50

o o

I--I--I--

[6 ~, , ,.-

I-~"140'C l-

I- ~" 25'C

I

~ I

0.2 0,4 0.6 0.8 1.0 1.2 1.4 V 1.6 _~>T

Transient thermal resistance for constant current

02~ [61

"

Z(!hJJC W ~~~~~~~d~:~de 1

1 0.15

1/

0.10 d~uble-sided

..

005

10' s 10' --t

Series BSt L 61

10

Input cnaracterlstlcs (scatter band) with trigger ranges and power dissipation hyperbolae

l611N61

20W lOW

'i-.... 5W

'§ 1f-..'2W t--l-f- ...-1--

~lW f- 25'C

., 10 140'C :..;

10'

5

2 /

o

40W == E

7 V 8 __ VG

Difference between transient pulse thermal resistances and transient thermal resistance for constant current, pulse currents 40 to 60 Hz

8 0,0 K

Zhn)p- W lhh)]C

1 0.0 6

0.0 5

4

l

0.0

UO

0.02

0.0 1

[61 ._-- --

-

.. , . rn;rn ~V 6Il"

~v 120'; II

~H 180'

to!v 180~~

10' s 10' --I

265


Disc thyristors for 200 V to 600 V; ITRMS = 950 A; tq = 151's, 18 I'S Application Primarily for self-commutated

converters of all types with lower operating voltage, e.g. Inverters, choppers, etc.


HK

Case Disc-type case, type 3 a as per DIN 44 499 (draft) Contact surfaces nlckelplated, ceramic Insulation

Connections Gate line yellow, 230 mm in length, included In delivery upon request

Polarity as stamped

Heat sinks Type KK32') KK34') NK12') Ordering Code Designation as per DIN 41882

Material Alum. Alum. Alum. Weight

Type V DRM t -151's q-

950 9 1200 9 2100 9

r -181's q-

VRRM dvdt=200 VII's dvdt=200 VII's

200V BStN6113f 300V BStN6120f 400V BStN6126f 500V BStN6133f 600V BSTN6140f*)

Current carrying capacity Double-sided cooling

Frequency'

50 Hz 250 Hz 500 Hz

1000 Hz 2000 Hz 3000 Hz 4000 Hz 5000 Hz 6000 Hz

1340A 1340A 1340A 1165A 810A 590A 460A 370A 310A

BStN6113g BStN6120g BStN6126g BStN6133g BStN6140g*)

1340A 1340A 1340A 1140A 775A 560A 420A 330A 260A

Recovery voltage VR appro 1V 300V Voltage before turn-on VD 300V Rate of rise of on-state current dildt 50 AIl's

Case temperature .9c 60 aC Equivalent values for RC circuit 0.68I'F, 5.60

NK15') NK16')

Alum. Alum. 2400 9 2700 9

t = 151's q dvdt = 500 VII's

BStN6113fS9 BStN6120fS9 BStN6126fS9 BStN6133fS9 BStN6140fS9*)

1900A 1900A 1900A 1900A 1800A 1250A 910A 720A 590A

1900A 1900A 1900A 1900A 1785A 1210A 860A 680A 555A

appro 1V 300V 300V

0.68I'F, 5.60

Series BSt N 61

Gate f lot pi ug as er DIN 46244

2.8xO.5 G

Dimensions in mm

KC14 .. ')') KD20 .. V')')

Copper Copper

t -181's . q-

dvdt = 500 VII's

BSTN6113gS9 BStN6120gS9 BStN6126gS9 BStN6133gS9 BStN6140gS9*)

~M ~

3200A 2600A 2120A 1480A 1100A 880A 720A

3200A 2600A 2120A 1420A 1070A 850A 680A

appro 1V 300V 300V

0.68I'F, 5.60

*) on request. ') Available only with component fitted. ') For complete designation see chapter on heat sinks.

266


Thennal resistance .Il.r Parameters: frequency t, current waveform

6 0.0 K

Jr W

1 00 5

0.0 ~

0.0 3

0.0 2

\

1\ "'-\ f".-

"'--r. -- '" 0.0 ~' 1-1 i.

T I,SOHz

0 30 60

N61

i"--, ""'-.

't---

90

~-,-Jj - t---- t---

1,50Hz

b:

--r--

120

-:-r--

150 .1 180 --.l

Peak reverse recovery current iRRM (lower limit of scatter range) Parameters: on-state current, rate of current rise, S, = 140°C

A

100'--'---'--~--r-~r-~--,---.---r--;

Recovered charge Q rr (lower limit of scatter range) Parameters: on-state current, rate of current rise, 8j =140°C

pAs 100

an 90

! 80

70

60

50

40

30

20

10

o

~ ,

I T= BOOA SOOA -.::::: 400A 300 A

----200 A 150A

----125A l00A lOA

~ ~ ~~ ~ ~

'" ~

::----- ~ ~ V ----: :::::--~ ::::::--~ f-""' ----" ~ ::::::---- V ~ ? ..---I-!----

~ 2:-- _tt=idir-IT -

I I I 'll';Qj' -

Series eSt N 61


L{'hIJC = i>dl-e-;:;} ;_1

Double-sided Cooling Cooling cooling onanodeside on cathodeside

; "IK/WI "' lsi "IK/WI "' [5] ,,[K/W]

1 0.0177 0.5208 0.0594 2.0533 0.0793

2 0.0179 0.0617 0.0109 0.0449 0.0220

3 0.0057 0.0217 0.0110 0.0394 0.0056

4 0.0056 0.0037 0.0056 0.0037 0.0031

5 0.0031 0.0008 0.0031 0.0008 -Formulae for determining tho total thermal resistance

RthJA = R'hJC + R thCA + Llr

Z(thiJA = Z(thlJC + Z(thiCA ZlthlplJAI = [Z(thlp-Z(thIJC] + Z(thIJA R thCA and Z(thlCAsee section "Heat sinks"

Peak reverse recovery current iRRM (upper limit of scatter range)

"' ['I 1.7411

0.0449

0.0037

0.0008

-

Parameters: on-state current, rate of current rise, 8j = 140°C A

160r--'---r---r--,-~r--.---r--'---'-~

iRRH 140 1--1-----1

1 120 I--I----j

a.

1

100 I--t---+

80 1--1----+

60

40

20

0 0 10 20 30 40 50 60 70 00 90 100 AlpS

-_diltlt

Recovered charge Q rr (upper limit of scatter range) Parameters: on-state current, rate of current rIse,

9j =l40oc pAs

300'--'~-r--'---r-~r--.---r--'---'-~

o w m M Y 50 " • ~ W mA~ _diAn

100 Alps -_di/dt

267

I

Silicon Controlled Rectifiers/Inverter Series eSt N 61

Thermal ratings


Operating temperature


Thermal resistance for constant current RthJC

(excluding heat transfer)

140°C

-40to + 140°C

-40to +150°C

O,05K/W 0.09K/W O.IIK/W



Thermal resistance caseto heat sink

R'hCK 0,01 K/W 0.02K/W

double-sided cooling \ see assembly one-sided cooling f instructions

Mechanical ratings

Contact pressure

Leakage path

F 5500N:': 18% 5mm

setpoint value

anode-grid

anode-grid Air path

Weight


Humiditycategory

Characteristics Forward characteristics (scatter bands) Parameter: junction temperature 8j

1200~~~~~~~~~"lln' J

5mm

100g

50 mIs' C

'1 A r I ! 1000 W---i-l---i--+.--l--l-.f-f-I.J-+I-l---I--l-.'J,.J+--I--

BOO f-I-+-\--l-+-+--1-+-+++-+--1--IJ1 I'-jf--l-+-I f- - "',.140'C +-+-+-1'-1+-1+--+---1-4'/+ /-+-+--1

600H -- "',' 25'C +-+--1-+1++ If+-i+-+tl 1'-+-+-+--1--1 I i I

400 f-I-++-1--W-++.ft--l-l---J,l1 /'--111-+1+-1--+--1 7

200 H---J--l-I-I--l--t--JVLf,J1 i4--cl-Ii..Jf--H-l--H-I I;

O~-L~~-L~~J~~/~~-L~~ O,B 1,0 \2 1,4 1.6 V l,B 0,2 0,4 0,6 __ 'IT

268

10

5

at 50 Hz, without heatsink



l611N61

20W lOW

"'I- 5W -If-. 2W r-- r-- l- F' o~ ~!'5.1W

40'C

25'C

., 10 140'C~

., 10

5

/

o

40W"" E

7 V B __ VG

Silicon Controlled Rectifiers/Inverter Series eSt N 61

Transient thermal resistance for constant current Difference between transient pulse thermal resistances and transient thennal resistance for ~onstant current, pulse currents 40 to 60 Hz

0.1

IOh)JC ~ 1 0.10

2

0.0 a

0.0 6

0.0 4

0.0 2

of-10 J

r--- . ill III

10 2

Blocking characteristics Maximum off-state or reverse current

"61

~

10 '

11111111

~~ ~~~~~!de "

/

double'Slded

10' --t

la'

0.0 K

Zhh)P- iN I(,h11C 0.0

5

4

! 0.0 3

0.0 2

0.0 1

a

25mA

Forward blocking characteristics Maximum rms on-state current !rRMS I') 950 A

Surge current

i2t value


!rSMII)

fPdt

VITO)

rT

Dynamic values, switching applications Latching current k

Delay time tgd

8,950A 7,750A

400,OOONs 300,OOOA2s 190,OOONs 140,OOONs

0.945V 0.434mf!

0.5A 1.0A

Critical periodical rate (dijdt)c, 150Aj~s of rise of on-state current with additionalload from an RC snubber

Periodical current (peak value) of a discharging RC snubber

!rMIRC) 100A

50A

"61 Illu

r--~v W;-I

1111

~ I) I ~v

r-- 12!lrll

~AV e/}!v r-- laO"1 lao'

r-- /l III III'

10' 10' 10° s --t

Secondary conditions 9, = 140° C, for 0.S7 VaAM,O.67 VARM

= 140°C, for VaRM, VARM

8;= 25°C} halfsinewave = 140°C 50Hz, VR = OV

8= 25°C} J = 1400C t= 10ms, VR = OV

9,= 25°C} t= 2to5ms = 140°C VR = OV

la'

} equivalent straight line for 8; = 140° C

8; = 1400C} Va = 18V, = 25°C IG=lA,diGjdt=lAj~s, = -40°C t9,= 15~s

IG = 1 A} diGjdt= 1 Aj~s, 9,= 25°C IG = 3A Va = 0.5 VaRM, LjR = 2 tgd

IrM = SOA

8; = 140° C, f = 50 Hz, Va = 0.S7 VaRM Long pulse with linear current rise to !rM= 1800A Additionally permissible peak current of a discharging RC snubber, IrMIRC) = 100A Drive required IG~ lA,diGjdt~ lAj~s

dijdt= (dijdt)c, 1 Drive required IG ~ 1 A,diGjdt~ 1 Aj~s

dijdt;;; lOAj~s Drive required IG'" IGT

9,;;; 140°C f= 50 Hz Va= 0.67 VORM

269

I

Silicon Controlled Rectifiersnnverter Series SSt N 61

Critical rate of rise of off-state (dv/dt)c, 200V/~s 0.67 VDRM

l 9, = 140°C

voltage (Type BSt N 61 ... ) 1 ,OOOV/~s 0.33 VDRM Linear

(Type BSt N 61 ... S 9) 100V/~s 1.0 VDRM voltage rise,

500V/~s 0.67 VDRM control circuit

2,000V/~s 0.33 VDRM open

Circuit commutated turn-off time tq 8; = 140°C,-di/dt= -10A/~s (Type BSt N 61 .. f) 15~s VR = 0.67 VRRM, VD= 0.67 VDRM (TypeBStN61 .. g) 18~s dv/dt= 50V/IlS,hM = 600A

Chip current fully risen before commuta-tion

Gate circuit ratings

} VD G; 2V Minimum gate trigger current IGT 100mA 8;= 140°C

250mA 25°C 450mA = -40°C

Minimum' gate trigger voltage VGT 1.0 V 8;= 140°C } VDG; 2V 1.5V 25°C

2.3V = -40°C

Maximum gate non-trigger current lGD 20mA 8; = 140°C, VD = 2V 10mA = 140°C, VD;:,; 0.5 VDRM

Maximum gate non-trigger voltage VGD 0.2V 8; = 140° C, VD ;:,; 0.5 VDRM

Maximum admissible gate current IGM lOA peak value IGAMS 3A rmsvalue

Maximum admissible gate power PGAVI') 20W maximum value losses

Maximum negative gate voltage VGRM 10V peak value

270



Cooling on cathode side

Pulseshapo CSEcircuitry (see explanations)

R' _ 5.6 il (3.9 ill C'- O.68~F(t ~Fl

f ... Frequency -1fT ITl.l ... Maximumdcpeakcurrent

More CSE circuitry(values in brackets) 10 maybe necessary if the commutation lIoltage is too high VR - Recoveryvoltage

Va ... Voltage before turn·on tp - Pulse duration t, ... Idle period


A

2

,

Series BSt N 61

Maximum dc output current peak value as a function of pulse duration tp Parameters: ge -= sa°e, Vo, VR, f, circuitry

IW.o..60"{IKl . ~5"

------

.........

f- -- t--..

i'" ~1kHZ 500~ 250~Z (:50Hz - 15kHz III 2kHz

~'.' 4kHz

5kHz Vo V,

-- 200V a 6kHz - 4QOV a

5

IIIII -- 200V 200 v - 400 V 400 V

10' 10' __ t,

Maximum dc output current peak value as a function of pulse duration tp Parameters: 9c = 85°e, VD, VR, f, circuitry

N611l. 85"( I~I

/" V .........

t---.... ~

-

,",

to -"" 1kHz ~ ,~ 250 Hz f::50Hz

'" 1,5 ki z

-_t, 2

A

10 ,

-2kHz

T 3kHl v~-4kHz -- 200V a

i" 5kHz - 400V a - 200V 200 V - 400V 400V

5 10' 10' -_t,

Maximum dc output current peak value as a function of pulse duration t Parameters: Uc = 110°e, Vo, VR, f. circuitry

I I ......---

'-- --......... --::- ......... 1------i"-,

-

10' J.ls

- 250Hz (::.50 Hz - 15 kH~ kHz SOO Hz

~ -=-"'" ",2kHz I III

3kHz Vo v, t--;:;;;;z -- 200V 0

- 400 V 0

, i I i-- -- 200V 200 V

- .00 V 400 V 10

5 10' -_t, 271

I




Pulse shape

di/dt => Aate ofcurrentrise f '" Frequency 0= lIT hM ... Maximumdcpeakcurrent VR = Recoveryvoltage VD .,. VoJtagebeforeturn-on tp = Pulse duration ts = Idle period

25A/ilS

CSE circuitry (see explanations)

R' C'

~1 R'~ 5,6!] C'~ O,6B~F

Graph for calculating power dissipation Ptot = W - f Parameters:d,/d,=25A/"s, Vo, VR,clrcultry W = energy loss per pulse

Maximum dc output current peak value (trapezoidal current with tp =TI2) as a function of frequency Parpmeters: d,td, =25 A Its, ,9c , Vo, VR.', circuitry

1S00 ~-limill

""~,o85'(

1000 , , ,

±f±S--, , i '''c=110 C ( -...

"

, 500 : ' : I

I

L 1

I ! I

10'

0) limiting value of trapezoidal current

272

f.l61 It 15AI1.I5

o60'ci--- Vo V.

200V 0 ~~

~

1"'-'" ~,

'X\

'-" """ "-

la'

"",00 V 0 tC/~oov 200 V

400 V ~400V

~~

" ~ :<., ~ ~,

~

"

5 --f

10' Hz

Series BSt N 61

Maximum dc output current peak value as a function of pulse duration tp ~ra~eters:d,/d,=25A/"s, Be = 60°C, Vo, VR.',

A c,rcultry N61, n.25A1,u1i,60·C .tOn

Maximum dc output current peak value as a function of pulse duration tp Parameters: d,/d,=25 A Its, 8c =85°c, Vo, VR.',

A circuitry N6t 11. 25M es"C "', , ,

1 JlI I

+ J~.~ " "r- ......... ....... ~ ~ I'--' ....

la' ·~h ~ ........ f= 50 Hz

SOOHz~ 2 zt-z

~~ k z 2kHz i--t -+ ~"" ::-"': 3kHz I '~~4kHZ I Vo V. ,

~"SkHZ I -- 200V 2l~-~ ~l 400 V -- 200 V , - 400V 400 V

1 S to' la' 104 .. S __ I,

Maximum dc output current peak value as a function of pulse duration tp ~ra~eters:d,/d,=25A/"s, Be = 110°C, Vo, VR.',

A circUitry N61 J'l2SA~s 110·' .12"

foSOHz

- ~ I.U ..... _ ~....... ~ 500Hz 250 Hz) I

~ ""-: ~ lkHz-f- I ,I !,.I I ...... ~~ • VD VI

..... ~ ...... l..... ~~ 105kHz -2:':00'---v+":'::'0- 1

'" ~ ~ 2krHT'11:1 -- 400V ~v "'- '1'-,. 3kHz - !:~ AOOV 10'L.L.LLLi-"--,,,--1--, ,L-'-'----LL--LLL-_--'-~_L_'L__'~.JJ

S 10' 10' 11' ~s




Pulse shape

di/dt = Rateofcurrentrise f "" Frequency =0 lIT hM - Maximum de peak current VR "" Recovery voltage Va "" Voltage before turn-on tp "" Pulse duration t$ ... Idle period

50A/l1S

CSEcircuitry (see explanations)

R' C'

4 1 R'-5,6n C' ... O.681lF

Graph for calculating power dissipation Ptot = W· f Parameters: d,ldt =5OA/flS, Vo, VR,clrcuitry W = energy loss per pulse

IT<

1

Maximum dc output current peak value (trapezoidal current with tp =TI2) as a function of frequency Parameters: d,/d/=5OA flS, Bc , Vo, VR f. circuitry

A ' N61 Jl 50AI~1

1500 ~ARIH~-ijmjl .- .J)60 O'[t~_ vo~ , I 200V 0

1000

, ~I-' y 400 V 0 I ~(=a C( ~ ./ 100V 100V

/400V 400V III I ~ I~ I

i ~ I I"'; ;110;[ ~ , .:,;;;,,,,,,,,- I ~. ~\ ,

I ~ ...... :-... ~ ~,

I "'" ~ I ~, ,~,

500

I , .;::-, '<;::" ~ , "

I I

10' 10' 5 10" Hz "J timitingvalueoftrapezoidatcurrent --f

I"

1

ITM

1

ITM

1

Series BSt N 61

Maximum dc output current peak value as a function of pulse duration tp Parameters: d,ldt =5O A/flS, 8 c =60·C, Vo, VR,I

A circuitry N6t n SOAI~f,60'C

-_t,

Maximum dc output current peak value as a function of pulse duration tp Parameters: d,ld/= 50 A JLs, Bc = 85·C, VD, VR/.

A circuitry

10

10

N61 n 50A.1lJ oS'e " ' "

wr~' '~~ r' ,,-- , --.. r--. , ~~!'~ "''i-~

) I..... I "" ~ f=50Hz

,

- .. , 500Hz z'

z

""'- -.;::~ 1,5 kHz

-~~~ "'12~Hz II

I r---.:::: ~ 3 \ Hi vo v,

-- 100V o ' ,

IN'"('I IJJOV 10~~ ~ -- 100 V

I - 400V 400 V

5 10' 10' 10~ jJs

Maximum dc output current peak value as a function of pulse duration tp Parameters:d,ld,=50A/flS, Bc = 110·C, Vo, VR.',

A circuitry N61, n 5Q~fJl,l\O"(

--', 273

I




Pulse shape CSE circuitry (see explanations)

R' C'

L;;1

d;/dt ... Rateofcurrentrise f .,. Frequency = 11T 1m = Maximum de peak current VR - Recovery voltage Va .... Voltage before turn-on tp "'" Pulse duration ts = Idle period

100A/lls

Graph for calculating power dissipation Ptot = W - f Parameters: d,/d,= 100 AI!'&, Vo, VR, Circuitry W = energy loss per pulse

7 N61,n,IOOAIIIS .2ln

~, "-v, 'I v,

-I{~ 0

I ""'" i'-. "-II' ?~-

4Oo'IT - -400V 400V 3,..

1:::,.." ['..: "-< ~ "'"

10 ~ ,

"- 'S' ~ "'" ~1-- t'.. " , ,,?

"

"" r".;:,"< MN "-

"""do 0 l': ,~ " ~ ~ l'-1" ~ ~"' "I'- l'

" 'I"tl "I'.: 1,5 5 10' 10'

Maximum dc output current peak value (trapezoidal current with tp = T12) as a function of frequency

-_I,

Parameters: d,/d, = 100 A I's, Bc. Vo, VR.'. circuitry A

'50 11. 0 N61, ,100Al/-lS .14n

H-lI\RIM~ -lima I ~(~6!~ V, i V,

400vT 0 .a-c= 5 '( V 400 V 4 OOV

"- / ~ 7

I II 1"1 '000

~!- 110 0 'e ,~

( - ~ ~ ~

'" ~ ~ I'"

500

~

o 5 10' 10" Hz

-) limitingva!ueoftrapezoidal current --f

274

Series eSt N 61

Maximum dc output current peak value as a function of pulse duration tp Parameters: d,/d, = 100 All's, B'C = sooc, Vo, VR f.

A circuitry , NHIt, 100A s,60'C 20.

F'= ... -I-- "--r-r-.. '0

-- ~ r----- f=50 Hz , 500Hz 250 Hzj-

1 kHz 105kHz

2 kHz I! !4 t--... I I _ll I i I

"-.: 8::: 3kH 1 Vo VR

- 400~ I 0

, I I I' n 141TIl '0

5 10' 10~ ps 10'

Maximum dc output current peak value as a function of pulse duration tp Parameters:d,/d,=100AI's, s.c=8S°C, Vo, VR f.

A circuitry , N61, n,100Alps, ~5·C

I

Silicon Controlled Rectifiersllnverter


Cooling on anode side

Pulse shape

f "" Frequency = lIT hM = Maximumdcpeakcurrent VR = Recovery voltage Va = Voltage before turn-on tp = Pulse duration

= Idle period

CSEcircuitry (sec explanations)

R' ~ 5.6fl(3.9flJ C· ~ O.680F(1 oFJ

Morc CSE circuitry (values in brackets) maybe necessary if the commutation lIoltage istoo high

Graph for calculating power dissipation Ptot = W - f Parameters: Vc, VR, circuitry W = energy loss per pulse

~61 • ..Cl.

5 ' -_I,

A

A

10

2

Series eSt N 61

Maximum dc output current peak value as a function of pulse duration tp Parameters: 9c = GO·e, Vc, VR.', circuitry

Maximum dc output current peak value as a function of pulse duration tp Parameters: Sc = 8S·C, Vc, VR.', circuitry

,,61,.0. 8S'( {AI

v -- r" /' - r---. y >-- ~

"'"

.~"

'; ~ -~ 1,5~z1kHZ ~ 250Hz f=50Hz ~2kHz

";a 3kHz +, l-t;+ ~

p4kHz V, -- 200V 0 5kHz - 400V 0 - 200 V 200 V - 400V 400V

5 10' 10' --I,

Maximum dc output current peak valut. as a function of pulse duration t

A Parameters: 9c = 110·e, Vc, VR, f, circuitry

N6\D110"C(A,1

/'"

10

/" -.......... -""""r---. - "-, • -

~~.5kHZlkHZ I 500Hz- 250Hz f= 50Hz

2kHz

--:: 3kHz I III -r-4kHz

1

v, v, 200V 0 400 V 0

, i I -- 200 V 200 V - 400 V 400 V

10 5 10' 10' '\O~ jJs

--I, 275

I




Pulse shape CSE circuitry (see explanations)

R' C' r+l

Series eSt N 61

Maximum dc output current peak value as a function of pulse duration tp Parameters: 8c = 60°C, Vo, VR.', circuitry

"61,.Ll. 60·C

r7 r::.--:: t:::-r--- ~ 250 Hz

".

f = Frequencv'" 1/T lrM ... Maximum de peak current VR 0= Recoveryvoltage Vo = Voltage before turn-on tp = Pulse duration

R'- 5,eCl(3,9Cl) C'- O,e8~F(1 ~F)

MoreCSEc;,cu;try(values;n brackets) 10 may be necessary if the commutation voltage is too high

~ ... \5kHz 1kHz 'w:::-4kHz

5 kHz 6kHz

10Hz '°rll' Vo V,

200V 0 Is = Idle period

Graph for calculating power dissipation Ptot = W - I Parameters: Vo, VR, circuitry W = energy loss per pulse

276

2

TTm - 400V 0

11m -- 200 V 200 V - 400 V 400 V

5 10' 10' __ I,

Maximum dc output current peak value as a function of pulse duration tp Parameters: Bc = 85°C, Vo, VR.', circuitry

N61, 0., 85 °C

.... ./ ---[:::::-- ~ 1--,-t:- \5kH1kHz 500Hz

~= 2kHz

.lin

10 ,

,2501' 'fr

2

A

~3kHZ 4kHz

5kHz Vo V,

200V 0 nlill - 400V 0

nml - 200V 200 V - 400V 400 V

5 10' 10' -_I,

Maximum dc output current peak value as a function of pulse duration t Parameters: 8 c = 110°C, Vo, VR, f, circuitry

" " .. rr I ............ t----

10 , ~t--!- ~

I-

250Hz ,o50Hz kH 1kHz

.b2k~; - 3kHz

- F 4kH~

i Vo V,

200V 0 400 V 0 -- 200 V 200 V

, - 400 V 400 V 10

5 10' 10' 104 IJS


li'apezoldal pulse operation


Pulse shape CSEcircuitry (see explanations)

di/dt "" Aateofcurrentrise f = Frequency - lIT hM = Maximum dcpeakcurrent VR =< Recoveryvoltage Va = Voltage before turn-on tp = Pulse duration ts = Idle period

100A/~s

R'~ 3,9Q C'- O.6811F

Graph for calculating power dissipation Ptot = W - f Parameters: d,/dl = 100 AI JL5, Vo, VA circuitry W = energy loss per pulse '

A

Maximum dc output current peak value (trapezoidal current with tp = T 12) as a function of frequency Parameters: d,/dl = 100 A I's, 8e , VO, VA, f, circuitry

A

80 L61 n lGOAI

T :: 0=

p. r~'~~

I t~/I"trlim;t =60 0 ( Vo ' VR

400V 0 a ,joc = ~5 °C -----~/ 4QOV 400V

0' H-(V

\\ 50 0 i

0 c =1 OOC i\\ I

\\ I 40

30 0 t- I R: ,

20 0 I

100

10' 5 101. Hz -_f

Series eSt N 61

Maximum dc output current peak value as a function of pulse duration tp Parameters: d,/dl =1OOAlI's, 8c =60°C, Vo, VR,"

A circuitry l~l Jl.1GOA~ 60"( , , , 20 " v, v, - 400jl 0

400V 400V

~ -io....r-.

10'

~ ~:::: r---1----__ ~

f= 0 z

1kHz_ 500Hz 250 Hz

"" 5 kHz I ~ ~ kH ,III

"'" ~ 3klHz i III

III 1,5 5 10' 10'

-_t,

Maximum dc output current peak value as a function of pulse duration tp Parameters: d,/dl = 100 A I's, 8 c = 85°C, Vo, VR,!,

A circuitry

10' 5

L61, n,100A!jJs,85"'C .21n

II v, v,

! I - 400 V 0 - 400V 400V

~ ~;:: ---f=SOHz

-';1:::-- "- 500H 250 Hz

~ "'" 1kHz

~0. ~ 1.5 kH,

I Ti II 10' 'KIlo jJs -_t,

277

Silicon Controlled Rectifiersllnverter



Pulse shape

dildt "'" Rate of current rise f = Frequency - liT lTM = Maximumdcpeakcurrent VA - Recoveryvoltage Vo - Voltage before turn-on tp "" Pulse duration ts ... Idle period

5OA/l1s

CSE circuitry (see explanations)

R' C'

r=;;1 R'~ 6,8n C~ O,47.F

Graph for calculating power dissipation Ptot = W " f Parameters: d,/dt =50A/"s, VD, VR, circuitry W = energy loss per pulse

A L~I, 1l.,50A4Js .18n

- -Vo'I'V:l 'k"""l'<;;:-f',.f'H-f>l.rrc--+-=--::t~~~ ~ ti

-- 200V 200 V -400V 1.00 v-

-_I, Maximum dc output current peak value (trapezoidal current with tp = T 12) as a function of frequency Parameters: d,/dt = 50 A I'&. /J,c' VD, VA, f, circuitl}'

A

300 f++t-H---t-t-H-+I-f'I'"~,,~,,,,~,+-'I''''''\'*'t+t+I

200 H++++---f-+-H+t-H+--"""~'*,>..t'\N-++H 100 H+t+t---t-+-H-+t+t-t---+"~"-'t"'t-'t+t+I

5 10 2 10' oJ limiting value of trapezoidal current _f

278

I"

1

Series BSt N 61

Maximum dc output current peak value as a function of pulse duration tp Parameters:d,/dt =50A/"s, ,'}'c =60·C, VD, VA f,

A circuitry , L61, 1l.,50Al~~, 60 °c .15n

--20DV 0 "'<::~d-+-l-+++H---+-- 400V 0

A;o-j-+"f>'~tttt---+=~~~~ :~

10'

A

500Hz

-_I,

Maximum de output current peak value as a function of pulse duration tp Parameters: d,l dt = 50 A I'&. ac = 85·C, V D, VA, f,

A circuitry

-_I,

Maximum de output currant peak value as a function of pulse duration tp Parameters: d,/d, = 50 AII'&. 8 c = 110·C, VD, VR f, circuitry ,

--==t==r=t"::"j::"f'''tAf'''('i1100C -----.-------.--- .17n . ==rVD ~ --t---l--l +++Hf--- - - 200V ro.j.j

400V 0 200 V 200 V 400 V 400 V


Disc thyristors for 200 V to 600 V; ITRMS = 1730 A; tq = 15/Ls, 18 /Ls

Application

Chip

Primarily for self-commutated converters of all types, e.g. inverters, static converters, choppers, etc.

Fully diffused silicon, with internal gate trigger amplification Current and heat transfer: noble metal pressure contact

Case Disc-type case, type 4 a as per DIN 44 499 (draft) Contact surfaces nickelplated, ceramic insulation

Connections Gate line yellow, 230 mm in length, included in delivery upon request

Polarity as stamped

Heat sinks

Type Ordering Code Designation as per DIN 41 882

Material Weight

Type VORM q

NK12')

Alum. 2100 g

VRRM dvdt = 200 V//Ls

200V BStP6113f 300V BStP6120f 400V BStP6126f 500V BStP6133f 600V BSTP6140f

q

NK15')

Alum. 2400 g

dvdt = 200 V//Ls

BStP6113g BStP6120g BStP6126g BStP6133g BStP6140g

') Available only with component fitted

') For complete designation see chapter on heat sinks.

K

I

Series BSt P 61

Flat plug as per DIN 46 244 A 2.B xO.5

--12 I

--114'0.5 l--

PK20')

Alum. 7500 9

q

dvdt = 500 V//Ls

BStP6113fS9 BStP6120fS9 BStP6126fS9 BStP6133fS9 BStP6140fS9

Dimensions in mm

KC14 .. ')') KD04/05')')

Copper Copper

t = 18/Ls q

dvdt = 500 V1/Ls

BSTP6113gS9 BStP6120gS9 BStP6126gS9 BStP6133gS9 BStP6140gS9

279

Silicon Controlled Rectifiers/Inverter Series eSt P 61

Secondary conditions Blocking characteristics Maximum off-state or fo, fR approx. 20 mA 8j = 140° C, for 0.67 VORM, 0.67 VRRM

(approx. 25 mAlO) reverse current 40 (60) mAO) = 140°C, for VORM, VRRM

Forward blocking characteristics Maximumrmson-statecurrent hRMSII) 1,730A

Surge current

i2tvalue


/rSM II) 16,000 A 14,150A

fi2dt 1 ,300,000 A's 1,000,000 A's

VITO) 1.03V rT 0.198mn

Dynamic values, switching applications Latching current h

Delay time tgd

Critical periodical rate (dildt)cr 200A/IlS of rise of on-state current with addi-tiona I load from an RC snubber

Periodical current (peak value) of a IrMIRC) discharging RC snubber

100A

50A

Critical rate of rise of off-state voltage (Type BSt P61 ... )

(d vld tIer 200 V Ills 1,OOOV/IlS

(TypeBStP61 ... S9)

Circuit com mutated turn-offtime tq

(Type BSt P61 .. f) (Type BSt P61 .. g)

280

100V/IlS 500V/IlS

2,OOOV/IlS

8j= 25°C} halfsinewave. =140°C 50Hz,VR=OV

} equivalent straight line for 8j = 140° C

8j = 140°C t Vo = 18V, = 25:C I fG= 1 A,diG/dt= 1 A/IlS, = -40 C tgt = 151ls

fG = 1 A }diG/dt= 1 A/IlS,8j= 25°C fG = 3A Vo = 0.5 VORM, L/R = 2 tgd

hM = 110A

8j = 140° C, f = 50 Hz, Vo = 0.67 VORM Long pulse with linear current riseto IrM= 3300 A Additionally permissible peak currentof a discharging RCsnubber, hMIRC) = 100A Drive required fG i1; 1 A,diG/dti1; 1 A/IlS

dijdt={dijd~w I Drive required fG i1; 1 A,diG/dti1; 1 A/IlS

dildt:£ 10A/IlS Drive required fG'" fGT

0.67 VORM ,9j = 140° C 0.33 VORM Linear 1.0 VORM voltage rise,

8j:£ 140° C f= 50 Hz Vo= 0.67 VORM

0.67 VORM control circuit 0.33 VORM open

8j = 140°C,-dildt= -10A/IlS VR = 0.67 VRRM, Vo = 0.67 VORM dvldt= 50V/Ils,IrM = 1100A Chip current fully risen before commutation

Silicon Controlled Rectifiersllnverter Series eSt P 61

Gate circuit ratings Minimum gate trigger current

Minimum gatetriggervoltage

Maximum gate non-trigger current

Maximum gate non-trigger voltage

Maximum admissible gate current

Maximum admissible gate power losses

Maximum negative gate voltage

Thermal ratings


Operati ng temperature ra nge


IGT

VGT

IGD

VGD

IGM

IGRMS

PGAV(I)

VGRM

Thermal resistance for constant current R'hJC

(excluding heat transfer)

Thermal resistance case to heatsink

Mechanical ratings

Contact pressure

Leakage path

Air path

Weight


Humiditycategory

*) on request

R'hCK

F

150mA 8j= 140°C } VD~ 6V 250mA 25°C

= -40°C

1,8V 8j= 140°C } VD~ 6V 2.5V 25°C

= -40°C

20mA 8j = 140°C, VD = 6V 10mA = 140°C, VD;;;; 0.5 VDRM

0.2V 8j = 140°C, VD;;;; 0.5 VDRM

10A peak value 3A rmsvalue

20W maximum value

10V peak value


140°C

-40to +140°C

-40to +150°C

0.03 K/W 0.0565K/W 0.064 K/W

0.006K/W 0.012K/W

10000 N ~ 18% 8.5mm

8.5mm

130g

50 mis' C


double-sided COOling} see assembly one-sided cooling instructions

setpointvalue

anode-grid

anode-grid

at 50 Hz, without heat sink


281


Characteristics Forward characteristics (scatter bands) Parameter: junction temperature 9;

2400

! 2000

1800

1600

1400 1=1= 1200 1-1-

1000

600

600

400

200

00

",,140'C ", ,2S'C

P61

~-,"

Transient thermal resistance lor contrast current

7 0.0

Z(th)JC 0 1 0.0 6

0.0 5

0.0 4

0.0 3

0.0 1

0.0 1

01-10-'

r--10"

Thermal resistance ~r

P6 , III

oncathodeside_", on anode side

'j

/ /

double-sided

~

10-1 l()O

-I


0.0 3 P6I

1\ \ W

0.0 ~-iJ= -

2 "- -/1, 1_ -

\ "- / '.50H; ;-

-r--..

1-~~iJV ~ :-....

......... -I). ./ I"--.. -

'.50H; I' ......

0.0

1{)1

a 1 30 60 90 120 . 150 el 180

~-).

282

Series BSt P 61


la' P61

'G ~ 20W 40W.= E

1 10 0

., 10

S

10'

S

2

~

--, 2S'C

-73 197?::1

/

o

...::r -.s~

r!Q.W

2W t-- f-

lW

LI

7 V ~_VG

Difference between transient pulse thermal resistances and transient thermal resistance for constant current, pulse currents 40 to 60 Hz

0.02 4 P61

Z(lhJp_ ~ Z{th)lC W 1 0.01 a

0.01 6

0.01 1 -0.00 6 -0.00 4

a 10" 10-2 10-'


2('hIJC = ir; r 1 - e-;;1 i_ 1

Double-sided Cooling cooling on anodeside

i ,(KIWI " (sl ,(KIWI r, (sl

1 0.0111 0.523 0.0376 2.3

2 0.0123 0.0722 0.0123 0.0722

3 0.0024 0.0127 0.0024 0.0127

4 0.0026 0.0034 0.0026 0.0034

111!lJ ~ 60':11

11111 Ilj II ~V 120'

l\1!!AV ~V 160' 160"

II II

II II 10'

-I

Cooling on cathodeside

,(KIWI " (sl

0.0451 1.67

0.0123 0.0722

0.0024 0.0127

0.0026 0.0034

5 0.0016 0.00064 0.0016 0.00064 0.0016 0.00064

Formulae for determining the total thermal resistance

R'hJA = R thJC + R thCA + Llr Z(th)JA = Zlth)JC + ZlthlCA

Zlthlp(JAI = [Zlthlp- Z(thIJC] + Z(thIJA

R thCA and ZlthlCA see section "Heat sinks"

SCR PowerMods, Phase Control

PowerMod Encapsulated Assemblies 18 A Avg; VDRM and VRRM Up To 1600 Volts

• Maximum continuous current 2X18 amperes average Tc = 87°C

• Primarily used in line com mutated converters

• Electrically isolated baseplate (2500VRMS)

• Recs optimized by fastening directly to metal baseplate

• Glass passivation for high reliability



B 0.24 0.26 6.10 C 0.11 0.12 2.80 D 0.21 0.22 5.33 E 0.78 0.80 19.81 F 0.58 0.60 14.75 H 0.38 0.40 9.65 J 3.14 3.16 79.75 L 1.17 1.19 29.40 M 0.78 0.80 19.81 N 3.65 P

Notes: (1) Faston Tab (.110 x .032)

A

~G2 K,fG1 AK] Fully-controlled version

Catalog Number

MTT18L06N

MTT18L12N

MTT18L16N

284

600V

1200V

1600V

Maximum

6.60 3.05 5.59

20.32 15.25 10.16 80.25 30.60 20.32 92.70

Notes

Series MIT 18L

", E

-1L-.:........J.L-----I=Fr J I

.. I

PowerMod Encapsulated Assemblies MmSL

Electrical Characteristics (1)

Forward Conducting

Max. RMS on·state current per SCR ITIRMS) 30 Amps

Max. average on-state cur. per SCR ITIAV) 18Amps Tc = 87°C, half sine

Max. peak on-state voltage VTM 1.9 Volts ITM =45Amps

Max. holding current IH 200 rnA Vo= 6 Volts

Max peak one cycle 60 Hz surge ITSM 250 Amps TJ = 125°C

Max.I't capability for fusing I't 260A'Sec TJ = 125°C, t = 8.3 ms

Switching

Critical rate of rise of on-state current di/dt 100A/l'sec. TJ = 125°C, Vo = 0.67 VORM Typical circuit commutated tq 75l'sec. TJ = 125°C, di/dt = 10 AIl's

turn-off time

Maximum repetitive RC snubber

discharge current ITM IRC) 40 Amps Vo =0.67 VORM ' ITM = 18 Amps

TJ = 125°C, di/dt = 100 AIl's,

Vo = 0.67 VORM

Thermal values

Maximum DC thermal resistance,

junction to case per SCR ReJc 1.0oC/W

Typical thermal resistance, case to

sink perSCR Recs 0.1°C/W

Operating junction temp. range TJ -40°C to + 125°C

Storage temperature range Tstg -40°C to + 150°C

Blocking

Max. forward leakage current IORM 10mA TJ = 125°C and VORM Max. reverse leakage current IRRM 10mA TJ = 125°C andVRRM Critical rate of rise of dv/dt 200V/l'sec. TJ = 125°C, Vo= VORM off-state voltage

Isolation voltage between connections and baseplatel') VISO 2500 VRMS

Triggering

Max. gate voltage to trigger VGT 1.5V VO= 2 Volts

Max nontriggering gate voltage VGO 0.25V TJ = 125°C, Vo = 0.5, VORM Max. nontriggering gate current IGO 2mA TJ = 125°C, Vo = 0.5 VORM Max. gate current to trigger IGT 100mA Vo = 2 Volts

Max. average gate power PGM 10W

Max. peak gate current IGM 3.5A

Max. peak reverse gate voltage VGM 10V

Mechanical Characteristics Terminal torque 35 to 50 in. -lb. Weight Approximately 4.4 ounces (125 grams)

(1) Tc = 25°C unless otherwise indicated

(2) Warning: The case must not be destroyed since this may release harmful beryllium oxide dust.

285

PowerMod Encapsulated Assemblies

Figure 1 Maximum power dissipation for 1 SCR of the module

eo -=15° 3~ 6Orfgorf,200 yroo

1/ I /, r/ V

1// r/ 60

I I /) '// I VI /h . .,~ 40

II ~ ;.r 1...L.r.L!t"

~ ~ Conduction

~ angle I

20 r--

r--o o 10 15 20 25 30 35 40 45

Average On-State Current-Amperes

Figure 3

f--

r--

50

Maximum baseplate temperature as a function of olHltate cunent for 1 SCR of the module o 140

'~ ::J 120 ~

I ~ 100

~ 1 80

8l E ~

E .~

:::;

60

40 o

~ ~ "\. "

,-f0C

/' /~ / / A...

to.... -< / /'800 "'\:x r-.... /'

II!L . /1200

V ">- L

V 600

../

V


FIgure 5

- -- -- -

Maximum transient thermal Impedance for 1 SCR of the module for constant cunent and pulse cunent

1.6

1.4

2

~~

l..-<

~ Vl/ ~ ~./

~~ V

"" I"DC

10·


286

-""" ---t><1--' L

600

ftoo-f"'... ~-

IlL 1800

10' 10' HI'

MTI18L

FIgure 2 Maximum power diSSipation for 1 SCR of the module

60

~ 70

60 0

~ 50 .~

is 40

~ 30 0 a. E 20 ~

E 10 .. ~ :::;

OC

45 50


Figure 4 Maximum power dissipation lor 1 SCR of the module· overcunent range

500

~ 450 ;:

400 I c

~ 350

Co 300 .~

is 250

~ 200 0

150 a. E 100 ~

E • 50

~

, I I / V/ /1

II II v-...- / "ob--/J " "'--- L- -r ~ l"'-V ~ 1800

I V/ 'Y " "A...- -1800 - -

//. ."-..... r----ftoo- -/. W- " '" 61!. V L- -

BOO

~ 1 20 40 60 80 100 120 140 160 180 200


Figure 6 Increase In thermal resistance versus conduction angle for 1 SCR (Total R9JC = DC RSJC + .41')

o.

o.

~ 0

'l o. <l g o. :ii

6

7

6

51

4

1;; O. 3 'i

,\. .~ \"\ V \-!.J

\. "'- • = ;~g1~uction _

"\. ~ a: 0 .. 2r--r-~

, ......... -,

0

~ o. ~

L.!J -30 60 90 120 150 180 210 240

Conduction Angle-Electrical Degrees


Figure 7 Gate characteristics ~ 10

Co

~ ~ 100

~ o ~ 10-

l'l ~ ~ o ~ 10-

i -= la-

L 1"'5W 2W

==1 lW

I 7

450C

'""" "',250C

o

20 10W_ ...--....., L.--'"

Instantaneous Gate Voltage-Volts

Figure 9 Single-phase bridge circuit-on-state loss characteristics Nomogram for detennlnlng maximum on-state currents for different cooling conditions

300 RecA 10

~ 25

~ ~ 20 Q

0

0

~150 Bi

_ 2 heat sinks

:,;-/"

k':

015 1 ./. 02 I--/. /" I--

./ ..",.04 I--/ ,.. ~:-I--

I--07_ I--

== (f ----

/' V -= p- 09 I--:;..-:: ..-:: =' ~ "

MTI18L

FigureS SCR on-state characteristics

10 0 I. J !I /i

0 , I

0 'I 'J-

l /' 0

1/ J

I V L V 1/ ---TJ'250C

0 II V -TJ·,250C

" 0 I I I 06 10 14 18 22 26 30

Instantaneous On-State Voltage-Volts

heavily inductive 'O~ __ 7 f-1 heat smk

./ .' ./ ./ ... , ./ ./

y./ ./ ./ resistive load

L :;" ./ V po ....

006 R~CA 3 00 01

/015 ,,-03-.., ,.-.., ,,-

-2 50~ -

2 ~

00 ~ --, 50 ~ Co -- .~

0 ::: :;;,:: ...-:: ~F-" ,,-I--is ~ 10

1£' -- 06-01 -, oo~

"- 50 7ii

~ 0 80

;;:~ ::;;.-" --60

--40

20_ I--3D I--" I--

°C/W'-

20 o 0

, V -- 10 20 30 40 50 60

Ambient Temperature-OC Bridge Output Current-Amperes Average

Figure 10 Three-phase bridge circuit-on-state loss characteristics Nomogram for detenninlng maximum on-state currents for different cooling conditions

300

~ r50 _ 200 o iil ~150 is

- 3 heat sinks

./

./ "/

V- ~

" ,,- -,,- -:;..;: 08- -

~~- - ~~u r--I--r--r--r--r--

" 100

~ ]ii o ....

50

0 so

/. :%:

~ ~ ;..-~ .-

!!= so

~ .... V --

40

-,,- -

-- 20--3D ./

~~-c--= 60_ I- ./

°C/W I-20 o 0 10 20 30

./

./

./

40 50 60

Ambient Temperature-OC Bndge Output Current-Amperes Average

./

....-::: ~ 06 09

=! ~P- ~g-20_

° /W 70 80 60 40 20

AmbIent Temperature-O C

-r--I-

~ 50 "

OJ

0° ~

ReCA 300 -1 heat sink ", I

./ 02 -

2

./ 03 -2 ./ ./ " " ....- ,.- -

" .... 05 , V ....- .., 06 -V ....- ... - " aa -, ..-:: 09

" -15- =5 20

°C/W c--

70 80 60 40 20

Ambient Temperature-°C

287


Figure 11 AC switch-on-state loss characteristics Nomogram for determining maximum on-state currents for different cooling conditions

160 AeCA

02 '- IRMs 14

~ 12

b 10

o r- 1 heat sink '" 03

0

" -0 V- "/ " -

r--~ r-

r-0 " ~ .~

-07 0 " -

" -" ./

is

~ 0 a.

0 15 -

0 -- " -11' -- ~6--

./

~ .... 0 " :--

°C/W 0 V

/ I

I

60

40

, , B

J'l 20 ~

00 ~ o ~ 0. 'gj

60 is

4 ~ • ~

20 rn o ~

80 60 40 20 o 0 10 20 30 40 50 60 70 80 90

Ambient Temperature-OC Switch Output Current-Amperes RMS

Figure 12 Three-phase controller-on-state loss characteristics lIIomogram for determining maximum on-slate currents for different cooling conditions

400

350 - 3 heal sinks J'l

~ 300

~ 250 ./

.~

0. 200 'gj (5 150

""'"... -' ...- --~ ~

~

3: 100 ~ l! 50 o .... 080 60 40

AecA

" ,

g~-I-./" r---

" r---

" I-

-~I"MS -. --

~* ./ 20_ r---25 r---" r---"

./

" I-~g-I-'CIW V

20 o 0 10 20 30 40 50 60

Ambient Temperature-OC Controller Output Current-Amperes RMS

288

-1 heat sink

./

;....-:

70 80 80 60 4

Ambient Temperature-OC

MTT18L

ReCA 3 00

02-

'" 03-

'4_

05

" n= " k~-

, 50 ~ =2 ~

00 ~ ~

50 .~ is

00 ~

-2

--, --, -:-- 5 o ~

l! 'CIW o {!.

20 0


• Maximum continuous current 2X25 amperes average Tc = 87°C

• Primarily used In line commutated converters

• Electrically isolated baseplate (2500VRMS)


1:1 Glass passivation for high reliability



B 0.24 0.26 6.10 C 0.11 0.12 2.80 D 0.21 0.22 5.33 E 0.78 0.80 19.81 F 0.58 0.60 14.75 H 0.38 0.40 9.65 J 3.14 3.16 79.75 L 1.17 1.19 29.40 M 0.78 0.80 19.81 N 3.65 P

Notes: (1) Faston Tab (.110 x .032)

A

~G2 f-G1 AK] Fully-controlled version

Catalog Number

MTT25L06N

MTT25L12N

MTT25L16N

600V

1200V

1600V

Maximum

6.60 3.05 5.59

20.32 15.25 10.16 80.25 30.60 20.32 92.70

Notes

Series MTT25L

289

PowerMod Encapsulated Assemblies MTT25L

Electrical Characteristlcs(1)

Forward Conducting

Max. RMS on·state current per SCR ITIRMS) 40 Amps

Max. average on-state cur. per SCR IT(AV) 25 Amps To = 87°C, half sine

Max. peak on-state voltage VTM 1.8 Volts ITM =60Amps

Max. holding current IH 200mA Vo=6 Volts


Max.I't capability for fusing I't 800A'Sec TJ = 125°C, t = 8.3 ms

Switching

Critical rate of rise of on-state current di/dt 100A/"sec. TJ = 125°C, Vo = 0.67 VORM Typical circuit commutated tq 75 "sec. TJ = 125°C, di/dt = 10 A/"s

turn-off time


discharge current ITMIRC) 40 Amps Vo = 0.67 VORM ' ITM = 18 Amps

TJ = 125°C, di/dt = 100 A/"s,

Vo = 0.67 VORM

Thermal values


junction to case per SCR ReJc 0.8°C/W


sink per SCR Recs 0.1°C/W

Operating junction temp. range TJ -40°Cto +125°C

Storage temperature range Tstg - 40°C to + 150°C

Blocking

Max. forward leakage current IORM 10mA TJ = 125°C and VORM Max. reverse leakage current IRRM 10mA TJ = 125°C andVRRM Critical rate of rise of dv/dt 200V/"sec. TJ = 125°C, Vo= VORM

off-state voltage Isolation voltage between connections and baseplate!') VISO 2500 VRMS

Triggering

Max. gate voltage to trigger VGT 1.5V Vo=2Volts

Max nontriggering gate voltage VGO 0.25V TJ = 125°C, Vo = 0.5, VORM Max. nontriggering gate current IGO 2mA TJ = 125°C, Vo = 0.5 VORM Max. gate current to trigger IGT 100mA Vo= 2 Volts


Max. peak gate current IGM 5A



(1) Tc = 25°C unless'otherwise indicated


290

PowerMod Encapsulated Assemblies MlT25L


i o

I c

~ E " E

~

··15° 31l'j ~9C l17'BOO 0

/ / 11/, '/ I I AI-

l! / flY / 'h I" ~-/, ~ ~

~ ~ I-!.J -

condUC11r-

~fI'" r9181 o

eo

60

50

40

30

20

10

5 W g 20 ~ 30 ~ 40 ~ 50


Figure 3

c-c-

c-

Maximum baseplate temperature as a function of on-state current for 1 SCR of the module t.l

'~

t ~ m ... g. ~

10

E 1: .. :li!

3O~ 20

~ ~ 10

.:---::: ........ 00 "\.. "'" 90

aD

70

aD

40

.' /~-./C ./ fA..._

r--.. / lBOO

!'..... "'>< /' ~o-r< /" ><::" /' ./' ~-

-:01--- I I

10 15 20 25 30 35 40 45 0

Average On-State Current-Amoeres

FigureS Maximum transient thennal impedance for 1 SCR of the module for constant current and pulse current

1.6

1.4 I II I II flL

~ ~ 1.2 =t.l

I EL 1800

"C 0 1.0 ~b § c; 0.8 cug.

11...-'2

eo""- 1>< ......

E13 0.6 2 10 I- g 0.4 "E c ~ 0

.~ ~ 0.2

1-.., o 10 '

",. V t:::;

;:::; ......

10 '

'fA... 18Q0

..... "'\ ).( ......

~

10 '


DC

III II

10' 10'


90 I ao • -300 60.' 90 120L

V !/ I".: ./ lBOo

60 J /~ V DC

/ V. y: /' 50

/. ~ ...... ", 40 1'"-1 -h 0J; v",.",. 30

~ ~ 1I-20

A:ii ~ I-!J -

';.., Conduction _ angle I

i---

i---

----

10 15 20 25 30 35 40 4S 50


Agure4 Maximum power dissipation for 1 SCR of the module - overcurrent range

" " 15

~ ~ Q.

10 .~

is

I Q. 50 E " E .~

:::;

0- EL 1800 II IV IL "-f .I 1// V - 1800 r--.. I /1 /' '0-

.~ Dr.

- W - ~ "-I-~

V .f W V ~ V

~ /"'" olAf""

20 40 60 80 100 120 140 160


Figure 6 Increase In thennal resistance versus conduction angle for 1 SCR (Total RSJC = DC RSJC + Ar)

o.

• Ir-J 7

6 \ 1I \ I-!J

Conduction 5

\ '" a"jle 4

\ :~ , I'-...

I-!.J ......... r----.. .1 Conduction I--Dangle

o.

30 60 120 150 180


291

PowerMod Encapsulated Assemblies MTT25L

Figure 7 FigureS Gate characteristics SCR on-state characteristics i 10

~ ~ 100

~

II C- .!. 10~ - 2~'t _I-

"< 5W_ ~

=c::::; IW3 2W

250 C o Q) 10-~

50

'" Ir

0

80

0

60

0

30

20

10

o ./

I j

typical

A II

// I

/, ./ '" .-

!. / If I

j ~ maxi~um-r--1/ ~;

/1 //

V / .-

--- - --- --- - TJ c 250 C-

" ./ 1 1

--- -?=1 2T"C-0,6 0.6 1.0 1.2 1.4 1.6 1.6 2,0 2.2

Instantaneous Gate Voltage-Volls Instantaneous Gate Voltage-Volts

Figure 9 Single-phase bridge circuit-on-state loss characteristics Nomogram for determining maximum on-state currents for different cooling conditions

300 Rr;:ICA

1 ~ __ J-t.lo

- 1": 25 7;:" or- 2 heal sinks -;;; ,,-/:,,- §o heavily inductive load"-., V/ -

/. /"" 0

/' V V ..... " 20 t-- resistive load........... ~ /-V V ........ 06--

/" / .- /.~~--150 f---- fi ~

0 ;...:::: r:::-: c:::- ~·;~5 -:::::::: r:-- r- I-- i-': h, ,;-r--

,,-r-~~~tiw

50

~

". V

"..... 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60

Ambient Temperalure-oC Bridge Output Current-Amperes Average

Figure 10 Three-phase bridge circuit-on-state loss characteristics Nomogram for determining maximum on-state currents for different cooling conditions

300

250

~ 20 0

~ 15 .~

is

0

0

0

L OS5 RaGA 06_ t

f-3 heat sinks /C)7 ~ ./"pe

-9: /. " .-9 /. ,125 -

# /. lj' / / ..... i'- -.....-:: ---:: ....... .-1'- -.- -::;...- .- --: ::"-t~- -;;.-: ;;... - --::: 40-

" ~ ;:::;0. - -" °elW

70 60 50 40 30 20 10

--t-+-I~ -ill ~, , ,

-~

/' V

"..... 0 10 20 30

/

/ V

/ V

40 50 60


13

292

70

/

70

0125 RGCA 3

r-- 1 hiat sink :,/",-, 1

/' /."

00

250

/" / /,'''--'// /' /."

2

// :,...-: v: V /," -1 /. "...... -,~'-::;.--- / :;;..;p---::::: ;:::;: ::::::-::: ;:;-

oe--1

::;:::: - ~.~~-;--

-= '20-r--°elW ,

70 60 50 40 30 20 10


,I. / i"_R~C' -1 heal sink / /1" r--

3 00

250 !'l

/ / /p,-f--'035 r-- 2

./ ///',,--DO!

/'/./ "--1 ~v:: :;;.-- "...... .... :"

o 50~

"gj 'b "'-::f-":::~::-- 1

:':::::E::;::;;::::::-r- -i :5-- OO~ ~ :::::::r:-:: I-::::;;;! ~ __

:::- -I- -i" 50 a. ;;

°elW 70 60 50 40 30 20 10 0 0

~



Figure 11 AC swltch-on·state loss characteristics Nomogram for detennlnlng maximum on·state currents for different cooling conditions

16 0

14

. 027s RoCA

0 ./:g;5-~ -1 heat sink

h V ...... ,04 0

"

I--r--O-"~' I--

I--~ ,05- -I.M :L L g~- -

~ /' " 0

" I--' ....- "- - ./ ~ JO -,--

°elW /

1/

/

70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90

Ambient Temperalure-oC Switch Output Current-Amperes RMS

Figure 12 Three·phase controller-on·state loss characteristics Nomogram for detennlnlng maximum on·state currents for different cooling conditions

30 0

00 250

~ 200

~ 150 .~

~ 100

& 50 Jii o >- 0

,...~65 ROCA 07- 1

-3 heat sinks V~8_f---~ 1/':"

W v.:: :;..---;,,-1-~ k/ V /.'25

I-i.O' ~ V ./ /,',-

~ VI--' ,,-I-~/ :::.-- V -." I-,;" i--: :-- -~~o-I-2::: F- ~40-

"

=O'~'

=* 1/ r-- /

/ /

;::::.. l- f-ri' °elW ./

70 60 50 40 30 20 10 0 0 10 20 30

/ V

/ L

/

40 50 60


70

MTI25L

0225 ROCA 3 00

r-1 hea1 'sink /,025 I

V- Ol 2 50

0 /,035 I--- ?

./ V /~4-/- :,..-V V /~'

1 ~ 1./," :/" ;....- ./ l--.06

-1 ....- :.-1-';"-~ :;.- ~ r-.1S-

--5 - ..-I-f--225

°elW

~

o ~ 0.

70 60 50 40 30 20 10 0 0 ~ Ambient Temperature-OC

293

PowerMod Encapsulated Assemblies 40 A Avg; VORM and VRRM Up To 1600 Volts

• UL recognized • Maximum continuous current 2X40

amperes average Tc = 85°C • Primarily used In line commutated

converters II Compression bonded structure for high

reliability In cyclic applications • Electrically isolated baseplate (2500VRMS)




B 0.24 0.26 6.10 6.60 C 0.11 0.12 2.80 3.05 D 0.21 0.22 5.33 5.59 E 0.78 0.80 19.81 20.32 F 0.58 0.60 14.75 15.25 H 0.38 0.40 9.65 10.16 J 3.14 3.16 79.75 80.25 L 1.17 1.19 29.40 30.60 M 0.78 0.80 19.81 20.32 N 3.65 92.70 P

Notes

(1)

A ~G2 ¥-G1 AKJ Ast K¥"-G1 AKJ

Fully-controlled version

Catalog Number (2)

MTT40A06N

MTT40A12N

MTT40A16N

Half-controlled version 1

Catalog Number (2)

MTD40A06N

MTD40A12N

MTD40A16N

Notes: (1) Faston Tab (.110 x .032 inches)

Series MTT40A,L MTD40A,L MDT40A,L

~ f G1 -,

H • I • E

f~~

Catalog Number (2)

MDT40A06N

MDT40A12N

MDT40A16N

600V

1200V

1600V

(2) Forthe soldered version, used In non·cycllcal applications, replace the "A", in the catalog

number, with "1.:'.

294


Electrical Characteristics~) Forward Conducting

Max. RMS on·state current per SCR ITIRMS) or rectifier

Max. average on·state cur. per SCR IT(AV) or rectifier

Max. peak on·state voltage VTM Max. holding current 'H Max peak one cycle 60 Hz surge ITSM Max.!'t capability for fusing I't Switching

Critical rate of rise of on·state current dildt

Typical delay time td Typical circuit commutated tq

turn·off time


discharge current. /TM IRC)

Thermal values

Maximum DC thermal resistance, junction to case per SCR or rectifier RSJC

Typical thermal resistance, case to sink per SCR or rectifier RScs


Storage temperature range Tsto Blocking

Max. forward leakage current IORM Max. reverse leakage current 'RRM Critical rate of rise of dv/dt

off·state voltage Isolation voltage between connections and baseplate(') VISO

Triggering

Max. gate voltage to trigger VGT Max nontriggering gate voltage VGO Max. nontriggering gate current IGO Max. gate current to trigger IGT Max. average gate power PGM Max. peak gate current IGM Max. peak reverse gate voltage VGM

75 Amps

40 Amps

1.75 Volts

250mA

700Amps

2000A'Sec

100All'sec.

3l'sec.

15Ol'sec.

80Amps

0.60 oC/W

O.OBoC/W

SeriesMTT40A,L MTD40A,L MDT40A,L


'TM = 120 Amps

Vo=6 Volts

TJ=125°C

TJ = 125°C, t = B.3 ms

TJ = 125°C, Vo = 0.67 VORM

IG=1 Amp

TJ = 125°C, dildt = 10 AIl's

Vo = 0.67 VORM ' 'TM = 18 Amps

TJ = 125°C, dildt = 100 AIl's,

Vo = 0.67 VORM

- 40°C to + 125°C

- 40°C to + 150°C


15mA TJ = 125°C andVRRM

200V/l'sec. TJ = 125°C, Vo = VORM

2500 VRMS

1.5V Vo = 2 Volts

0.25V TJ=125°C, Vo =0.5, VORM 6mA TJ = 125°C, Vo = 0.5 VORM 200mA Vo=2 Volts

20W

10A

10V

Mechanical Characteristics Terminal torque 35 to 50 in. ·Ib. Weight Approximately 4.4 ounces (125 grams)



295

PowerMod Encapsulated Assemblies Series MTT40A,L MTD40A,L MDT40A,L

Figure 1 Maximum power dissipation for 1 SCR or rectifier of the module

80

70

60

50

40

~ I-!.J--

30

20

Conduction ar,gle 10

o o 10 15 20 2S 30 35 40 45 50 Average On·State Current-Amperes

Figure 3 Maximum baseplate temperature as a function of on-state current for 1 SCR or rectifier of the module u 130

o~ 12

~ 110

~ ~ 100

D,q=-I--0 ~

----

L-I--l8Dt-I--....... L'-I--I" l80~-I--L'-I--

1'>--- 1fooc I--

I"\, I--

"\. ~,-I--90

80

---v , "

70

60 10 20 30 50 60 70 80


Figure 5 Maximum transient thermal impedance for 1 SCR or rectifier of the module for constant current and pulse current

1.0

L 1800

L 180

!L DC

1200

L 600

10' 10' 10'


296

Figure 2 Maximum power dissipation for 1 SCR or rectifier of the module

80 • -300 00 20 1 0

70 x

60 DC,?

50

40

i= 'l.!.J =

30

20

10 Conduction

o angle I I

o Average On-Stale Current-Amperes

Figure 4 Maximum power dissipation for 1 SCR or rectifier of the module - overcurrent range

100 0

-ffoo III V -fto ---- lL '/ /

r--- /1. / 0

L '/ / r-,~ b r---- V,. '/ -(

L 1/ ~ ~ DC r-joo ~ ~ ./

o I ~ ~ a ~I"'"'"

50 100 200 250 300 350 Average On·State Current-Amperes

FigureS Increase in thennal resistance versus conduction angle for 1 SCR (Total RSJC = DC)

05

r---I \. ]I

l.!.J \ "\ Conduction

3 angle I--r----\ ." IA ......... ./ 2~ .........

r-... -r-,_ W .........

---~;onduction o angle

30 60 120 180




Instantaneous Gale Voltage-Volts

FigureS Single-phase bridge circuit-on-state loss characteristics Nomogram for detennining maximum on-state currents for different cooling conditions

300 ,,-R<>o,

~ 240

t 180

~ 15

~ 120

~

" 60 '0 f-

- 2 heat sinks r--;:; ~~45_ 1

" / :::..--?55 I--

:;...::; 06_1-"/ "-r---

% "/ ~~:-I--./ :%,y ./' h :% ~

~,o-t--

~ %~ ~'5-r---

'" = ~ '" ~ ..- ~ :;;.;~~ --- :;;-::;: r:;;-

~g-r---,,-t--

±~~ heavily Inductive load

resl'sti~e 'Io~d

0 ~.,::

I

'CN!-

l-

80 60 40 20 o 0 10 20 30 40 50 60 70 80 90 100 80


I heat Sink

V ./

/. ./ ./ /../ /'

V. % ..... I%:: ~ I-::: ~

:::;: :::::--

60 40

02-./

I02L

/j03-

00;

~ ~:L '/.0 5

..",..,..,06-

~O7-

~?~-,,-;~-'"

R8cA

I

------

300

" 240 ~

~ 180 R

~ 15

20 (j) _1

----

~ "-

60 rn ~

'CN!

20

Ambient Temperature-"C Bridge Output Current-Amperes Average Ambient Temperature~"C

Figure 9 Three-phase bridge circuit-on-state loss characteristics Nomogram for determining maximum on-state currents for different coaling conditions

30 0 /,0'

~ 24

~ ~ 18

~ 15

~ 12

0 "-

" ~

- 3 heat Sinks 7' 71~8_ROcA 0 /. /.

09_ 1

./ :;; '''-'--

0 /' V /t125 r--L [...'" /' " V. Y .,./

,.,.,20- '--Y ./ .,./ 0 .,./ /' I-"'"" " ,.- ~.~~~ ~ -::: ~ ~ ~,48-

0 eo

'CN!-

10 [ '- -

I I I I I

t

o

t--

"-~

:::

80 60 40 20 o 0 10 20 30 40 50 60 70 80 90 100 80


/.o~~~ 3

1 heat Sink /025 ROcA

" , 2 /. 035 I-/ V ./ 0.-I-'l' ./ ./ .,./ I

00

./: ./ ./V 0;

././' ./' " ...-: .,./ ./' ~~-r-1 ...-: ---= .....-:: ;;...-;..- ;..- ;;..., ::;. ~g-I-::;;:::: ;::;-- ~~- I-- 6

'" I-'C;W-

0 60 40 20

297



15 0

i 8. 100

.~

Ci

50

o

I- 1 heat sink ./.

/.. ".L

~ Ai' YV ;...--

;/ ;..-: .... = ~

~--: .... ......, , ... --~ 1=

/," .~ ~f4S-R0cA /1°5- !

" "

.L-c:~::t~' - +

~:~:-I-"""";,0-f-"""""1'25 -~1'5- -

..--.20 . '25-~

~g- -,,- -°C/W-

1 56

1 00

50

80 60 20 o 0 10 20 30 40 50 60 70 80 90 100

Ambient Temperature-OC Switch Output Current-Amperes AMS

Figure 11 Thlllll-phase controller-on-state loss characteristics Nomogram for detennlnlng maximum on-state currents for different cooling conditions

30 0

~:B-R0cA r- 3 heat sinks f--:; 09- r .....,...:10-r-

V /1125 I-./

15-f-/. V """1'75 I-.... ~20-I-0 .......... :25-I-... ;,..-: I---"" ... _~>o-I-

~g-~ 0 ~~:...:

. :0.1 240

180 .~

Ci ID 12

~ "-

" ~

-

6'~' ---

* ----

I

I

ocm-


'" 3 00 '>0, .

r- 1 heat Sink 1/ ~,,- 1 ~

./

.L/'. ....--:; Z V ......

:..-::: --"!>' "., ;..., :;;,:: ::;;-=::

.?

'" " '" os

" ~~~-~~g-

~.!~-25-

2

1

40 ~ o

-1

80 ~ ~ Ci

20 ~ I-

f-f-

~ "-

60 S ~

°C/W-0 80 60 40 20 o 0 10 20 30 40 50 60 70 80 80 60 40 20

o o

Ambient Temperature-O C Controller Output Current-Amperes RMS Ambient Temperature-OC

298

PowerMod Encapsulated Assemblies 50A Avg; VORM and VRRM Up To 1600 Volts

• UL recognized • Maximum continuous current 2 x 50

amperes average Tc = 80°C • Primarily used In line commutated

converters • Compression bonded structure for high

reliability In cyclic applications. • Electrically isolated baseplate (2500VRMS)




B 0.24 0.26 6.10 6.60 C 0.27 0.28 6.86 7.11 D 0.21 0.22 5.33 5.59 E 0.78 0.80 19.81 20.32 F 0.58 0.60 14.75 15.25 H 0.38 0.40 9.65 10.16 J 3.14 3.16 79.75 80.25 L 1.17 1.27 29.40 32.60 M 0.78 0.80 19.81 20.32 N 3.65 92.70 P

Notes

(1)

Af-G2 #-Gl AKJ A¥ ¥Gl AKJ Fully·controlled version Half-controlled version 1

Catalog Number (2) Catalog Number(2)

MTT50A06N MTD50A06N

MTT50A12N MTD50A12N

MTT50A16N MTD50A16N



AtG2 K£ AKJ Half-controlled version 2

Catalog Number (2)

MDT50A06N

MDT50A12N

MDT50A16N

600V

1200V

1600V

(2) For the soldered version, used in non-cyclical applications, replace the "A", in the catalog

number, with "1.:'.

299

PowerMod Encapsulated Assemblies MTT50A,L MTD50A,L MDT50A,L


Forward Conducting

Max. RMS on-state current per SCR or rectifier

Max. average on-state cur. per SCR or rectifier



Max peak one cycle 60 Hz surge


Switching

Critical rate of rise of on-state current

Typical delay time


turn-off time


discharge current

Thermal values


junction to case per SCR or rectifier Typical thermal resistance, case to

sink per SCR or rectifier Operating junction temp. range

Storage temperature range Blocking


Max. reverse leakage current


Isolation voltage between connections and baseplate(')

Triggering



Max. nontriggering gate current


Max. average gate power


Max. peak reverse gate voltage

IT(RMS)

IT(AV)

VTM

IH ITSM

I't

di/dt

td

tq

ITM (RC)

ReJc

Recs TJ

Tstg

IORM

fRRM dvfdt

vlSO

VGT VGO

fGO

fGT PGM

fGM VGM

105Amps

50Amps Tc = 78°C, half sine

1.75 Volts ITM =165Amps

250mA Vo= 6 Volts

1100Amps TJ = 125°C

5000A'Sec TJ = 125°C, t = 8.3 ms

100A/",sec. TJ = 125°C, Vo = 0.67 VORM 3 ",sec. IG= 1 Amp

150 ",sec. TJ = 125°C, di/dt = 10 A/",s

80 Amps Vo = 0.67 VORM ' ITM = 18 Amps

TJ = 125°C, dildt = 100 Af",s,

Vo=0.67 VORM

0.60°CIW

0.08°CIW

- 40°C to + 125°C

- 40°C to + 150°C


15mA TJ = 125°C andVRRM 200Vf",sec. TJ = 125°C, Vo = VORM

2500 VRMS

1.5V Vo = 2 Volts

0.25V TJ = 125°C, Vo = 0.5, VORM 6mA TJ = 125°C, Vo= 0.5 VORM 200mA Vo=2Volts

20W

10A

10V




300

PowerMod Encapsulated Assemblies MTT50A,L MTD50A,L MDT50A,L


16 . 0 15 3'i1 60,,/ 900 12001-:;

:0.1 :: 10

0

0

0 ~ is

~ o 0.

E E

0

0

0

x . 20

:1 20 40

Average On-State Current~Amperes

Figure 3

1800

~ I..!.J

Conduction angle

60 80

Maximum baseplate temperature as a function of on-state current for 1 SCR of the module ~ 140 Dt_

" ""--- I!!L ~ t:----. -I-" ....-,80.

,,~ <" - ilL-

1'\' ~ ....", - -l~QO-

'\ ~ ""-. - L-120(1

\ 1,\ ~ '" ./ L-

\ /' ~ I-- BfO-'\: ..». --- ~ I

II--- I I I 20 40 60 80 100 120


Figure 5 Maximum transient thermal impedance for 1 SCR of the module for constant current and pulse current

0.9

I 0.8

g ~ 0.7

-u ~ 0 1 0.6

..§ ~ 05 -,,-§ ~ 0.4

~ ~ 0.3

§ § 0.2 .~ n ~ § 01 >- ~ 0

I

I

f0-10 -,

',/ _f- ',/~ -I--" ~ ::::~

10 -, 10


II ,/ IL ....-: ~

IL:~ '1~UI

~'" ilL 181 ~ ",I L

III 1200

~ II 60U

0 10 10


160

l ::: •. 300 fao~ 900 120d!-

18fO

~ 100 .~ DC

o 80

~ 60 0. lit , -

I.:J -5 40

E 20 ·x Conduction-

:1 angle o

o 20 40 60 80


Figure 4 Maximum power dissipation for 1 SCR of the module - overcurrent range

1000 . ~ ~ 800

~ .~ 600

is

I ~ I / /V 1800 // 1/ ilL '" / / V 18,00 r--.- "- J /, V L "-~ 400

L :x ./ "DC-1200 f- f-I ~ ./ o

0.

5 200 E .~

::;

L _61"' ~ ..,

o

° 50

"" ~ :,....-~ V

100 150 200 250 300


FigureS

350

Increase in thermal resistance versus conduction angle for 1 SCR (Total RSJC = DC RSJC + ar)

<E ~ 1 <l

i .~

a;

" ~ {:.

04

03 1"-

02 1\

01 :ri I..!.J

I-Conduction

o o

angle

30

~

'" I\. l-?' i'..

60

r--1

JI I.:J

/ Conduction angle

"<... r---. ,

90 120

Conduction Angie-Electrical Degrees

--I-

150 180

301

I


Figure 7 Gate characteristics ID 10 :;;

i, ")' E

~ o 10

~ .'

'" 00

"

J:~ .,

;;;;;

;:::: 2W 5W

I==R ~ 1W

25°C

1250C

I'Y

10W~20W

Instantaneous Gate Voltage-Volls

FigureS

40W

Single-phase bridge circuit-on-state loss characteristics Nomogram for determining maximum on-state currents for different cooling conditions

60 0 00175 0'045 Roc ~Io'

~2 heat sinks 17 ~g~ I ~ + - heavily inductive load

./ .-::;." I--Q. ~O'15- I--

0 -:;;W --:;-~'~5-I-~ ""./ r::;;;:

,,-I--~ '/ ~ t:;...:

~g~~ I-~ ~ ?' ::::::;;

o:~_ I--0 = ~g~:..= r.=

:I~= l-I-1°-I-

t:O- X." I--resistive load

V 1-' 77 i- 17 ~ I~ f---- .- IY--

12'" ~

'CfW

/ / f--1 heat sink

./ '/

'/ -9 ~ 1./ '/ '/

f- t::" ----V ----

~ -

-Z

~ 1/

:.-

MIT50A,L MTD50A,L MDT50A,L

'" ROCA 600 00225 !

~.J'~!035-r-O,O45_~

[;.0'" 0065 I--V~~~I-

°1 15_ I--q2-I-d;5- I--

~g~-g~-

I--I--

'r-I-'CfW

0 80 60 40 20 o 0 25 50 75 100 125 150 175 80 60 40 20 Ambient Temperature-OC Bridge Output Current-Amperes Average

Figure 9 Three-phase bridge circuit-on-state loss characteristics Nomogram for determining maximum on-state currents for different cooling conditions


60 0 ~1~~-~CA b++ I

/ 000 RecA

1---'3 heat sinks-~ ~;I"_f-/ J--1 heat smk

001 I

§ID ./ 000 "7 t'/g~5-l- V .0::;;"

0 " / '/ W '/ j 0"

10 '/ 0.5_ I-- / /. '/- ./

<: -'l q6_ I-- 1/ ./

0,2_ I--~ ;;::::;;g~- I-- I---

----V q25_ I--

-;;; >:;; '"/ r;:;:; ~e;:;o~6-l- /-- f- --f- -~ ,;:;; V :;,..;; 1'-I--i:-I--~ I::::"- ~5_ I-- V --'" = 20 1./ V :-- ~.:- I--25 ./ 'jO_ I-- If "1 0_ I--0

c:;;> 80 60 40 20 o 0 25 50 75 100 125 150 175 80 60 40 20 Ambient Temperature-oC Bndge Output Current-Amperes Average Ambient Temperature-oC

302

600

00

li 400 ~

2 ~ ~

2000 o ~ a. E!

00 ~


Figure 10 AC switch-on-state loss characteristics Nomogram for detennlnlng maximum on-state currents for different cooling conditions

300

1 200

~ ~ o 100 . ~ a.

" ~ o

r--' heat sink

~

V-% ;;.,::: ;...,:

80 60

~ .....: .....:

V 7

V % ;..-..-:: = .-: ;;.:;:: ~

40

g&1_R~

~gI09- t_

" c-~'~'

0,"

g ~75 -Vo~;-OJ

~O35- -"

~H- --=-~~~== -

1'5- -'1°_ -

"erN 20 a 0 50 100 150

Ambient Temperature~OC SWitch Output Current-Amperes RMS

Figure 11 Three-phase controller-on-state loss characteristics Nomogram for detennlning maximum on-state currents for different cooling conditions

600 0225 Ra:A _I

~~25 f-3' heal sinks-~ .,;0"- ,_ -c:;t},~,

/- ..... O>5-~ V /,,-t---

* 'l: / " "

~~ Y /" /" .... g~-r--.~y ,/ V .-: ~~~-r--V. ;;,:: ;;.,:; / r- 1'25-= ::=:;:: ,...... - t---c----~-"

~~-~ 1-- ,- I::r'

"t-r--"erN

60 40 20 o a 50 100

.... -.

3 00

2

1

0 200

-1 heat sink ./

.//

/. /" v. ;..-- ".... % .-

I--f-c-. -.;; &1' ;-- :..--:: :;;--

i ~ ;::::;-

.-150 80 60 40

MTT50A,L MTD50A,L MDT50A,L

RQ, 008_ 600

1

" 0125

0,15_ r-- 4 0175 r--0',

~~}5_ t---~~'35- t---

0,4_ t--- 2

~~~-r--g~-r--"lO_ t---

"erN 20

Ambient Temperature-OC Controller Output Current-Amperes RMS Ambient Temperature-OC

303

PowerMod Encapsulated Assemblies 65A Avg; VORM and VRRM Up To 1600 Volts

• UL recognized • Maximum continuous current 50 amperes

average To = 80 aC • Primarily used in line com mutated

converters • Compression bonded structure for high

reliability in cyclic applications. • Electrically isolated baseplate (2500VRMS) • Recs optimized by fastening directly to

metal baseplate



B 0.24 0.26 6.10 6.60 C 0.27 0.28 6.86 7.11 D 0.21 0.22 5.33 5.59 E 0.78 0.80 19.81 20.32 F 0.58 0.60 14.75 15.25 H 0.38 0.40 9.65 10.16 J 3.14 3.16 79.75 80.25 L 1.17 1.27 29.40 32.60 M 0.78 0.80 19.81 20.32 N 3.65 92.70 P

Notes

(1)

A

~G2 KtG1

AKJ A* KtG1 AKr

Fully·controlied version Half-controlled version 1

Catalog Number Catalog Number

MTT65A06N MTD65A06N

MTT65A12N MTD65A12N

MTT65A16N MTD65A16N


304

Series M1T65A MTD65A MDT65A

f G1 ,-

~ f-~J

A

tG2 K~ AKJ

Half-controlled version 2

Catalog Number VORM'VRRM

MDT65A06N 600V

MDT65A12N 1200V

MDT65A16N 1600V

PowerMod Encapsulated Assemblies MTI65A MTD65A MDT65A

Electrical Characteristics (1) Forward Conducting

Max. RMS on-state current per SCR IT(RMS) 120Amps or rectifier

Max. average on-state cur. per SCR IT(AV) 65 Amps Tc = 80°C, half sine or rectifier

Max. peak on-state voltage VTM 1.45 Volts 'TM = 150 Amps Max. holding current 'H 250mA Vo = 6 Volts


Max.Pt capability for fusing I't 9300A'Sec TJ = 125°C, t = 8.3 ms

Switching

Critical rate of rise of on-state current dildt 100A/l'sec. TJ = 125°C, Vo = 0.67 VORM Typical delay time td 3l'sec. IG= 1 Amp

Typical circuit commutated tq 15Ol'sec. TJ = 125°C, dildt = 10 AIl's

turn-off time


discharge current 'TM (RC) 100Amps Vo = 0.67 VORM ' 'TM = 18 Amps

TJ = 125°C, di/dt = 100 AIl's,

Vo = 0.67 VORM

Thermal values


junction to case per SCR or rectifier ReJC 0.50°C/W


sink per SCR or rectifier Recs 0.08°C/W

Operating junction temp. range TJ - 40°C to + 125°C

Storage temperature range Tsto - 40°C to + 150°C

Blocking

Max. forward leakage current IORM 15mA TJ = 125°C and VORM Max. reverse leakage current 'RRM 15mA TJ = 125°C andVRRM Critical rate of rise of dv/dt 200V/l'sec. TJ = 125°C, Vo = VORM off-state voltage

Isolation voltage between connections and baseplatel') VISO 2500 VRMS Triggering

Max. gate voltage to trigger VGT 1.5V Vo = 2 Volts

Max nontriggering gate voltage VGO 0.25V TJ =125°C, Vo=0.5, VORM Max. nontriggering gate current IGO 6mA TJ = 125°C, Vo= 0.5 VORM Max. gate current to trigger IGT 200mA Vo = 2 Volts


Max. peak gate current IGM 10A




(2) Warning: The case must not be destroyed since this may release harmful beryllium oxide dust. 305

I

PowerMod Encapsulated Assemblies M1T65A MTD65A MDT65A


160

14{)

120

100

so

60

0

0

0 10

... 15

/

1/

;.-::.-::;

20 30

__ 3C

it-

/

1/ /

40 50

Average On-51ate Current-Amperes

Figure 3

f-600 ¥ 1200

180'

V cw= c~n~ion: angle

60 70

Maximum baseplate temperature as a function of on·state current for 1 SCR of the module () 130

o~ 120

~ 1'0

E 100

~ 90

80

70

60

" ~ -" "-

I--'\.~

-50 100


Figure 5

D~_ r-L- '--1BO?- e-

GL- ,---f- 180~- -

IIL-r-120P--L-f-6001- r-

l'o..

150

Maximum transient thennal impedance for 1 SCR of the module for constant current and pulse current

07

06

g~ <"C:I (J 0.5 "00

~ L 04 E; tog. E ~ 03 1!cc t- S 0.2

0.1

o

306

l-

H" 10' 10'


....:: :;,:

/ --L 18,00-

~ GL V 800

r:L 200

DC-I- L 600

10' 10 102•


160

~ 14

• -30~:I r--600 f<ioo 0

r-_ 12 o or-~ 10 'g:

r-or-r-Or-is

~ D-

E 0

0 § .;;

~ 0

r--I

.lI W

f- Conduction .....

angle

~~ ~

10 20 30 40 50


Figure 4

... ;'200

/ 'i1'l7 v

,/ DC ,/

60 70 80

Maximum power dissipation for 1 SCR of the module· overcurrent range Ul 100

~ g 80

~

0 L 18"l,.

0 GL 180~

" '~ 60

is 0 IlL

120

~ 40

D-

~ 20

0 L f--~~

0 DC .;;

~ ~

0 40 80 120 160 200 240 2ilO 320


FigureS Increase in thennal resistance versus conduction angle for 1 SCR (Total ReJc = DC ReJc + dr)

0.2 5 I ~ 0.2 0 \. ~I ;:> 1 <1

11 ~ ;;; "m a:

i r

JI - - r-5 \ \. WJ - - r-\ ........ /' Conduction

i\" '< angie - - I--

Sil ..........

I-!.J V "- --Conduction r--angle

0.1

0.1

0.05

00 90 120 150 180 30 60




10 ,ow IN 10W 20'1_ r-

10 "h·Jw 5W p = =t~1W

25°C 10-

125°C

Ir 10 _, II

0 0 0 c . J

10


Figure 8 Single-phase bridge circuit-an-state loss characteristics Nomogram for determining maximum on-state currents for different cooling conditions

8ooEI3Ef3=f~~~~ ~ 600~+~~t~:?t;~

t 4001=:t~~~;:J~~~ ± heavily inductive loa

~ o o

~ 2oo~g'l~g3

-+-1 0

(l = L

~ ~ °C/W ~ OL80--~-5~0--~-40w-~~2~0--~~0 0

f--resislive load

/ '-I /.

c~ ,:;.

«:' +

50 100 150

.J

200


Figure 9 Three-phase bridge circuit-an-state loss characteristics Nomogram for determining maximum on-state currents for different cooling conditions

80

r--3 heat Sinks 0 1 60

~ 40 0

~ o ~ 20

~

" "0

0

~ 0

..-,:: ~

80 50

~

...-: ...... ::;...,

I

• 40

RaCA

7~~~5 I

-" -'" -

..... ,03 -g~~ I-'o~<_ I--

.......-:~~5_ I-:;;,---,g~- I--

----

~1~_ l-2()-l-"-I--

'C/W L' 20 o 0

~f-ID

W r--

A

./ I

./ y

50 100

1/

1/

150 200


250

MTT65A MTD65A MDT65A


[--1 heat sink

/' :...-:

h~/ i--"'" ~"'-:::f-'" ;.:::- ,..... -

RaCA 800 )045 I 0055 r-

/;)065

~g~~ r- 6 00 ~ ~ r-

~~ r-....... > 15 r-

"-r-Ol' r-

~~i5 r-o~_ r-6~-r-,,-f--

'C/W

4 .~

00 ~ "Bi o

200 ~ e-

" 250 80

a ;§ o 50 40 20

Ambient Temperature-cC

307


Figure 10 AC swltch-on·state loss characteristics Nomogram for determining maximum on·state currents for different cooling conditions

30 a /9 09 ROCA

t--1 ~eal sink ,/,01- !

01S -

/; ~2_ ~"~'

-a

IV ~25_ -

0' VV :;.gk- -:.v V =---

,.04- -"v. ;;.-: ...... ...... ~5- -

= ..-: ,~- -g~:-: =

::0,:: 11°_ -;;:::::-- I ~~- - I

t I

"C/W 70 60 50 40 30 20 10 0 0 c 00 100 150

Ambient Temperature-"C Controller Output Current-·Amperes RMS

Figure 11 Three·phase controller-on·state loss characteristics Nomogram for determining maximum on·state currents for different cooling conditions

BOO Roc,o\

r-- 3 heat sinks .A175

I " V. ~25_ f-

:/" ,.,. ,....,..-::p-I-'" I-...-:; V V. " " &~-f-

700

~ 600

~ 500

! 400 ~

=-c;:i'"' ~g /'

....-:v. --~ ~?8-I-,,-I-15 300 r- ' r :;.,,: ~ ~~5=-=

~ ~o-

. • 200 0 "-

I I

','-f-f °C/W ~ 100

t- ",., 70 60 50 40 30 20 10 0 0 100

/


308

300

1

~ U t-

200

-

-

~

1 heat sink

/' /'V /V

"/ ",., ...... ",., .....--.,.. -~ ~ ~ ~

MTI65A MTD65A MDT65A

.Rllu. 8 00 .;I~ O~5 t

0065 '- 7 00

600 ~ '" /0'-I-

015-f-

" H:=~

~I:-f-oo-f-°C/W

~ 500 ~

o 400 a 300 m

o 200 ~

1 o

00";;;

200 70 60 50 40 30 20 10 o 0 ~

Ambient Temperature-DC

PowerMod Encapsulated Assembies 95 A Avg; VORM and VAAM Up To 1600 Volts


amperes average Tc = 86°C • Primarily used in line commutated

converters • Electrically isolated baseplate (2500VRMS)


• Compression bonded structure for high reliability in cyclic applications



B 0.24 0.26 6.10 6.60 C 0.11 0.12 2.80 3.05 D 0.21 0.22 5.33 5.59 E 0.78 0.80 19.81 20.32 F 0.58 0.60 14.75 15.25 H 0.38 0.40 9.65 10.16 J 3.14 3.16 79.75 80.25 L 1.17 1.19 29.40 30.60 M 0.78 0.80 19.81 20.32 N 3.65 92.70 P

Notes

Note 1

A

f-G2

KtG1

AKJ A~ KtG1

AKJ

Fully-controlled version Half-controlled version 1

Catalog Number Catalog Number

MTT95A06N MTD95A06N

MTT95A12N MTD95A12N

MTT95A16N MTD95A16N


AtG2 Kk AKJ Half-controlled version 2

Catalog Number

MDT95A06N

MDT95A12N

MDT95A16N

Series MTT95A MTD95A MDT95A

600V

1200V

1600V

309

PowerMod Encapsulated Assemblies Series MTT95A MTD95A MDT95A


Forward Conducting

Max. RMS on·state current per SCR or rectifier

Max. average on-state cur. per SCR or rectifier



Max peak one cycle 60 Hz surge


Switching

Critical rate of rise of on-state current

Typical delay time


turn-off time


discharge current

Thermal values

Maximum DC thermal resistance, junction to case per SCR or rectifier

Typical thermal resistance, case to sink per SCR or rectifier

Operating junction temp. range


Blocking


Max. reverse leakage current


Isolation voltage between connections

IT (RMS)

IT(AV)

VTM

IH ITSM I't

di/dt

td

tq

ITM (RC)

IORM

IRRM dv/dt

and baseplate!') Vl50 Triggering


Max nontriggerlng gate voltage

Max. nontriggering gate current


Max. average gate power


Max. peak reverse gate voltage

150 Amps

95Amps

1.34 Volts

250mA

1900Amps

15000A'Sec

100A/j!sec.

2j!sec.

150 j!sec.

100 Amps

0.08°CfW


ITM = 150 Amps

Vo = 6 Volts

TJ = 140°C

TJ = 140°C, t =8.3 ms

TJ = 140°C, Vo = 0.67 VORM

IG=3A

TJ = 140°C, di/dt = -10 A/j!s

VoO.67VORM,/TM = 95A

Vo = 0.67 VORM,/TM = 18 Amps

TJ = 125°C, di/dt = 100 Aij!s,

Vo = 0.67 VORM

- 40°C to + 140°C

- 40°C to + 150°C

20mA

20mA

200V/j!sec.

2500 VRM5

1.5V

0.25V

6mA

200mA

20W

10A

10V

TJ = 140°C and VORM TJ = 140°C andVRRM TJ = 140°C, Vo = VORM

VO=2Volts

TJ = 125°C, Vo = 0.5, VORM TJ = 125°C, Vo = 0.5 VORM Vo=2Volts

Mechanical Characteristics Terminal torque 35 to 50 In. -lb. Weight Approximately 7 ounces (200 grams)



310

PowerMod Encapsulated Assemblies Series MTT95A MTD95A MDT95A

Figure 1 Maximum power dissipation lor 1 SCR 01 the module

150 ,., /l

! ~ 100 c. .~

o

·180° - I-.fA2bl -90' L

*600 /

-3~' ./ ./ - .'50 /' 1800 I-

/ Ji1 I-z I-

'/ ~ ;-i...:.J I--:MV Conduction '--

.~ W angle

o ~ o 10 20 30 40 50 60 70 80 90 100 110 120


Figure 3 Maximum baseplate temperature as a lunction of on-state current lor 1 SCR 01 the module ~ 140

~ 130 a ~ E ~

120

110

~ 100 . I 90

<II 80 E E 70 ..

60 ~

~ I":::-

o 20

fL -r'il ;:-..;r--., 60.0

1200

-"C>' L-I-I-~

v 1 B09 '.+--1--L-

V tt I.\. ·oc-

"

40 60 80 100 120 140 160 Average On-State Current - Amperes

Figure 5 Maximum transient thennal impedance lor 1 SCR of the module for constant current and pulse current

0.6

5

4

3

".~ f-1-1::: a?'

".

~~ l\fL K fI-

600

L,IIi" ~ 1

L 1800

f-I- 1-1-"" bc III" I !II 10' 10' 10' 10'


10'


• ;::300 600/$00/ 1200 ...100-0

/ V 'fo ~ 15

/ !/ V V ./9L / / V ./ 1

~ 100 .~

o

~ c. 50

E

E ~ ::; 0

h ~ P'

/ / ~

/ %Ii ~ ~p

/ / '/ / V Vv ~/ ~ JI-I-

WJ - I--Conduction

rg"1 I-I--

o 10 20 30 40 50 60 70 80 90 100 110


Figure 4 Maximum power dissipation lor 1 SCR of the module· overcurrent range

i E 100

'" ~ 200

~

L lBOO L I I

1800 I!L I 1200 fL

"- 600

8 300 ~ .

'" '1 400 (5 . g> 500

DC ~

'" 600 o 500 1000 1500 2000 2500

MaXimum Power Dissipation-Watts

Figure 6 Increase in thennal resistance versus conduction angle for 1 SCR (Total RSJC = DC RSJC + Ar)

i Cl

i w ~ ~ '" c a

i

'~ J6L \ \ W - r-\ '\.. / Conduction

r---t

I' "'" angle - JI-r--/ WJ r-

"- ........ / Conduction-angle ----~

180

150

120

90

60

30

'-' o o .05 10 15 20

Thermal Resistance, dr-oelW

311



H "I--.

I

-' 25°C

~

" _}250 C!?,

JL -_i 10-

..... 10-

1-- 10~::

2W 5W r-

~

20W -l-


FigureS

40W

Single-phase bridge circuit-on-state loss characteristics Nomogram for detennining maximum on-state currents for differenl cooling conditions

700

~ 600

~ ~ 500

.2

~ 400

.~ 300

0

~ 200 0 "- 100

" ;; t-

./0125

f-2 heat sinks--:: -2 ~t15-RQ:;A L~17S- I

/. V~2--

/. V /9 225 -

/. V V /~:n5-

V,,- ,,--~'--e<--

~i---':_ ........ ~5--

.-: :.- ,,--

-- ~~--00--~~--2O-c--

"C/W

r--heavily inductive load,

)<.

t---resistive load / '/

/. .//

b D

"'-IL

70 60 50 40 30 20 10 0 0 50 100 150

,

o~ 200 250


Figure 9 Three-phase bridge circuil-on-slale loss characteristics Nomogram for detennining maximum on-slale currents for different cooling conditions

800

70 ~r75 R0cA or-- 3 heat sinks- I-----c o;:"='- 1 o,,-f---

0 ...-: ,,-!' 045-C-

O 05-f---

0 %: :;..-- i.-":: ~~- f---:;..-- .-: :-- ~~9- -

0 io- -:.- ,..- f-" \ ;5_ -0 1°

::: ~ 40 ~ cS 30

ID g 20

./

0 " 'C/W

""iti 10 ;§ ./

70 60 50 40 30 20 10 a 0 50 100 150 200 250 300


312


-1 heat sink /' .,.-

V / ./. /" // V

;...-V ..-: :--::;;.-:: ..... .-: -.. ;;- ~ ,::::

00' 007-

.... ~,,-/~1-

..,0125

....... 015-

....... 0175 02-

.....-~25-,,-:;::F'-~r~-g~-

"-

R0cA 7 00 I

-6 00 •

--5 - 00 ! --

400l

00 .~ -3 --2 --1

o 00 ~ • o 00 "-

"C/W Jii o (3.

70 60 50 40 30 20 10


8 00' RElcA

00

00 _1 heat sink '1'-"" v. ,,- I

J ~~;-V /. ..... ,....,.-l~2-

q25 ;/ ..... :---?275 ..... - ..- Q35-

gt5-g~-

0

I 7

-0 --5 -

4

E 00 ~

00 b .2

00 "[ --' 300 g

200 ~ -C--

~ 1

'C/W 00 iii

;; 70 60 50 40 20 10 0 0 ~



Figure 10 AC switch-on·state loss characteristics Nomogram for detennlnlng maximum on·state currents for different cooling conditions

Rce. l-

I

3 30

~

0 ~~~ns r-io""" ...... ~1~5_ r-

2 ~ 20

~ 15

0 ~ ;..-

~

~ --~ v:: ;::'-"-~,35 I-;..- ;..- ,,-

'" I-::-~ --~~-~-G::J.I~'

• 10

~ a.

" ~

':: ~ :;....: f- i-:::: ::::=~~ r--

0 1~5-r--~~:--

- °e/W

/ /

..........--

./ /"

V /

/

300 ~

! o

200 ~

1

~ 15

00 ~ f1. ~ o f-


70 60 50 40 30 20 10 50 100 150 200

Ambient Temperature-DC SWitch Output Current-Amperes RMS

Figure 11 Three·phase controller-on·state loss characteristics Nomogram for detennining maximum on·state currents for different cooling conditions

800

700 .... "" Rce • 3 heat sinks I

" ~ 600

t 500

400

~ 15 300 . ~ 200

°,35 _ -V V~'~5-= --

/ 0,5_ -0,6_ -

-: /" ...... 07- -;..:V ...... ,...- 0'8- -

:;- -- ,'0- -i;:= -~ -

/

a.

" 100

~ r-:: - -'"

°e/W ./ ./

70 60 50 40 30 20 10 0 0 50 100

/

~I'M'-------

*-~ 150 200 250


- 1 heat Sink

V /

;..- ...... .... ;;..-- / ......

i-""": ...... -.... "

0125

t'-0,175-

0.2_

,"",,025-

~?13-~?35-

045-

g~-~6-

ROc. I

I-

800

00 7

6

1-5

00 ~

oo~ I r-

1-4 ooi 00 ~

15 00 Q:j'

l-1-3 I-r-2 I-

1 • OO~

°e/W o ~ 70 60 50 40 30 20 10 0 f-

Ambient Temperature-DC

313

PowerMod Encapsulated Assemblies 160 A Avg; VORM and VRRM Up To 1600 Volts


amperes average Tc = 86°C

• 1600 Volt V DRM and V RRM • Primarily used in line com mutated

converters • Electrically isolated baseplate (2500VRMS)


Dim. Inches

B C 0 E F G H J L N P R S T U V W X Y

A

Minimum

1.53 3.68 1.79 3.14 1.55 0.31 0.039 0.39 0.17 0.29 .047 1.26 0.197 0.25 0.43 0.27 0.59 0.12 0.98

G2 K2

K

Millimeter

Maximum Minimum Maximum

3.72 1.83 3.16 1.63

K1 G1

AK

39.5 93.4 94.6 45.4 46.6 79.8 80.2 39.5 41.5

8.0 1.0

10.0 18.0 7.5

12.0 32.0

5.0 6.3

11.0 7.0

15.0 3.0

25.0

Catalog Number VDRM/VRRM

Notes

TJ = 40° to + 125°C

F160T060

F160T080

F160T120

F160T130

F160T160

314

600

800

1200

1300

1600

Series F160T

VRSM

TJ = 125°C

700

900

1300

1400

1700


Series F160T


Forward Conducting Average on-state current per SCR RMS current per SCR Peak on-state voltage Maximum holding current Typical latching current

Maximum peak one cycle surge

I't capability for fusing Switching Critical rate 01 rise 01 on-state current Typical delay time

IT (AV)

IT (RMS) VTM IH IL

ITSM i'dt

di/dt td

Typical circuit com mutated turn-off time tq


discharge current

Thermal values Maximum DC thermal resistance, ReJc junction to case (DC)

Typical thermal resistance, Recs case to sink


Storage temperature range TS19

Blocking Maximum off-state current IDRM Max. reverse current IRRM Critical rate of rise 01 dv/dt

Isolation voltage between-connections VISO

and baseplate-RMS

Triggering Maximum gate voltage to trigger VGT

Maximum nontriggering gate voltage VGD Maximum gate current to trigger IGT

Maximum non-triggering gate current IGD

Maximum peak gate power PGM Maximum peak gate current IGM Maximum peak gate voltage (reverse) VGM Mechanical Characteristics

160A 250A 1.65V 250mA 1A

5100A

100A/l'sec. 2.2I'sec.

1.5I'sec.

200l'sec.

100A

Tc = 86°C, hall sine

TJ = 25°C, IT = 480 A TJ = 25°C, VD = 6V, ITM = 1 A TJ = 25°C, VD = 18 V, IG = 1A, diGI dt = 1 A/l'sec., tg = 15l'sec.

TJ =25°C, VR=O

TJ = 125°C, I = 60 Hz, VD = 0.67 VDRM IG = 1A'} diGdt = 1A/l'sec, TJ = 25°C

VD = 0.5 VDRM, UR = 2t9d IG=3A, ITM =0.1 IT (AV)

TJ = 125°C, ·di/dt = -10 AIl's

VD=0.67 VDRM, VR=50V

ITM =95A

dildt = 100 AIl's, IG = 1A, diG 1A I'S

TJ = 125°C, f = 60 to 50 Hz,

VD = 0.67 VDRM

0.16°CIW per SCR 0.08°CIW per module 0.04°CIW per SCR 0.02°C/W per module - 40°C to + 125°C - 40°C to + 150°C

25mA 25mA 200V/l'sec.

1000V/l'sec. 3000V/l'sec. 2500V

1.5V 1.8V 0.2V 250mA 350mA 20mA 10mA 20W 10A 10V

TJ = 125°C, VDRM TJ = 125°C, VRRM TJ = 125°C, 1.0 VDRM TJ = 125°C, 0.67 V DRM TJ = 125°C, 0.33 V DRM Warning: The case must not be destroyed since this may release harmful beryllium oxide dust.

Terminal torque 35 min. -50 max. lb. -in. (4-5.6 N-m) Mounting torque 36 lb.-in. min. (6 N-m min.) Module has no upper torque limit Weight Approximately 17.5 ounces (500 grams) (1) Tc - 25°C unless otherwise indicated (2) Warning: The case must not be destroyed since this may release harmful beryllium oxide dust. 315



320. ),_15° 30" ~

280 /

~ 1200

/

I 240. //

t 200

160

f /1/ / ./

V // ./

i5 //.

law. /

I 120. ~v -'/" -E 80

i 40.

''''-:; t, r-//, filii""" ~ ..-

40. 80. 120. 160 200

Average On-StBla Current-Amperes

Figure 3 Maximum baseplate temperature as a function of on·state current for 1 SCR of the module

130

0 120.

~

t no.

~ 100

~ 90 J

E 80

~" r-...... I~~

180.' r-

~v r-~S;:- DC f-

./ k-':' 180.'

e!!:'" f-

" K r-I': "'x 120'_ ....... ./ r-

<""'-~v r-

""'-60.'_ r-

~

.~ 70. ::Ii

40 80 120. 180 200 240. 280.

Average On·State Current-Amperes

Figure 5 Transient thennal resistance for 1 thyristor of the module for constant current and pulse current

0..3 2

r- ~" r- 180.' 1'-

0..28

0..24 f- ~v f- 180.'

r-~~ '", r- 120:'

6f- , r- ~v M

2r- 80' ....... ~

0..20.

0..1

0..1

0..0. a ...... r--::

0..04 De a 10-' 5 10-2 5 10-1 5 lao 5 1015

Time, seconds

316

Series F160T

Figure 2 Maximum power dissipation for 1 SCR of the module 32 a .-3 50' 90' 1

a 1/ DC / /

a / // ./

/ / /

./ ./ /. '/.

~--j} -

'/,V a /..~./.

-~

-a

'~ !!V t, -a .h(ff!P' ,.,. 0.-

40. 80. 120. 160 200 220.


Figure 4 Maximum power diSSipation for 1 SCR of the module· overcurrent range 2400

r--W~v r- V // - sw. .. ! ....... II !/I/ r-_ ~v r- _ 12ll·'1" I'-...

r- tf!:." l"- I '/V - 180:- ....... 7 V -r;e-r-- a!!"

r- -1--180.' "- r--.,. I/'V rz- ~ ::>:: V IA :? V

V~ ~ ~~;...-

.... 1iP 100 200 300 400 500 600 700 BOO


Analytical function for DC: lor one thyristor

2 3 4 5

0.0922 0.039 0.0154 0.0086 0.0048 'elW

" 2.11 0.415 0.0355 0.0048 0.0012 seconds


Series F160T

Figure 6 Thennal resistance .a.r for 1 thyristor of the module

0.07

1\ \

0.06


, 10

5 20W lOW

\ " ~ 8. 0.05 /- lW ~ ...., ..... ---§

0.0 4

0.0 3

1 t 0.0

Ii 0.0 1 r---r-

30

i\. ~

'" ~~'I I'---1'" I

60 90

~--B'-l-1,

"'- r--... ........

........ r--

lW

., f'7J; <'tlK ,40;C 15'C

125°C

., I 10

110 150 180 5 0

Conduction Angle, J. I Degrees Gate Voltage. Volts

Figure 8 Single·phase bridge clrcuit-on·state loss characteristics Nomogram for detennlnlng maximum on·state currents for different cooling conditions

;~.055 Roe. 2 heat sinks

1600

1400

/ L 1 heats.lnk

40W=i=

1 600

Q,027S RecA 1 400 ~o /,0.065 r f=- - heavil inductive load 0.035 !

0.08 '/'/ r--_ - resistive load 0,045 1 1100 100 L '/ V 0.10 Ii. r-

,/V / /0.115 ~ t-- /. 1000

/. V / / ..... 9.15 <l 0.175

r-=- -0.10 /V ;..- _Q,1]_F=

, V % ;..-- ...- 0.30 I-- - I.Y ::;-::::: .-

~~1~ I--~ ;...- --.-:: :;..,: :;:;. - 0.60 I-- ". , , I 0,90 o'c;w / -r= /

800

600

400

100

60 40 10 a a 100 200 300 400

Ambient Temperature-° C Bridge Output Current-Amperes Average

Figure 9 Three·phase bridge circult-on·state loss characteristics Nomogram for detennlnlng maximum on·state currents for different cooling conditions

1600

1400

1100

1000

800

600

400

100

3 heat sinks

'/ ,/V V

V. % ~ -r....-:: P:::: -::: I--':: -

60

:rn Roc. 0115 1-,/~015

.... 0175 /010

V/ 0115 /1/ 015

% V ala Ol5 I--0.40

....-::;...., 0.50 C- - 71' ...., _0.60 r---f-- j...-O.W I--

1.0 r---1.15 r---

'cm / /

40 10 a a 100 100

I.f-L'

lOO

/

1/

-

400 Ambient Temperature-° C Bridge Output Current-Amperes Average

'/'/ V 0.055 I--.... 0.065~ 1

0.08 I--0.10 I--,

'/ V --- 0.115 r---1/ V -- 0.15 r---

f- 0.10 r---:::: r--- --r- --:~:l! I--

.40 _ 0.45· gm

000

800

600

400

100

50080 60 40 10

Ambient Temperature-° C

1 600 Roc.

L 1 heat s;nk ....-0.04 1- 1

'/ L 0.05 1-0.06 =1

400

100

0.07 -1 000

V 0.09 0.10

-- 800

_0.115-...-:: ~

__ 0.15 - 600 -- _0.10 = -- i-":::R~ _ R _-1

400

00 'cm

500 80 60 40 10 Ambient Temperature--° C

317



600 I 010 L

U 1 heat sink ~01251-,/ ,/ V015 1-

/ ,/ /. V 0175 I--

020 I--/. ::...-:: ~0.225 /' 0.25 I--,./,./% ..-:::..: :::;-- .... ~l~ I--

-:::~:::::::: ...-:: f-:::; 0.'0 I--~~ ,:: ......-: p-?50- --

::::::::::::::::: - ~~: I--1.0 I--

I--I

° ao ° 0 60 '0 20 100

I

1 I

200 300

Ambient Temperature--° C Switch Output Current-Amperes RMS

Figure 11 Three-phase controller-on-state loss characteristics Nomogram for detennining maximum on-state currents for different cooling conditions

1600 Roc.

3 heat sinks

1= §BBB 0.15

./ 0.175 ,./ '-

./ /' V 0.20 -0.225 -

./ ./ V 0.25 ./

-O.lO

/. L:: 0-- 0.l5 I-- L y: :;....- ....- .-0.40 :;; / ....-:: ...-: ...-: 0.45 I-- - c---

/f ..-::: ::;.-: ~ ;:..- ·,··--Blt I-- - -~ :::::::: :.:::;::: ::::::: I==F- Ra8 F ,/

I--1.0 ,./ 1.15 -200 "CIW ./

60 '0 20 ° ° 100 200

/

/

-

loo

Ambient Temperature-° C Controller Output Current-Amperes RMS

318

600

5

,

2

1

° 400

/.

'00 ao

1 heal sink

,./ ,./ ./ LV ./ /

.-/ f--~

60

,./

V V / / L /

-- -~ ~

'0

Ambient Temperature-° C

Series F160T

1 600 Roc.

0045 1- 1 "//0.055~1 V 0.0651--

/o.oa -1 ~

0.10 -a v 0.1251--

f-- R1l5:= 6

::'-81~ I--O.lO I--Rl! - 200

"ICIW

20

Assemblies

Custom Assemblies

Introduction In response to special customer needs, our Applications Engineering group provides you with design support, while our Custom Assemblies Department provides quality products to fit your design.

In the custom assembly Situations, Siemens believes responsive, personal service is very Important. We provide rapid response time and up-front technical assistance. We'll work with you in evaluating assembly requirements and special applications of the following product categories: • High-voltage stacks (for applications requiring

8000 - 72000V). • Power rectifier and SCR circuit assemblies. • Rectifier and SCR circuit assemblies to 800A

and 1600V using AI extrusions. • Lower-current potted rectifier and SCR

circuit assemblies. • Single and three-phase bridge recti pOint

assembly. • High current module circuit assemblies up to

300A and 1600V on extended heat sinks forced air or N.C. cooled.

The result of the cooperative effort between a customer and our Custom Assemblies specialists is a quality product suited to customer needs.

320

Rectipoint Silicon Power Rectifiers

• Complete bridge with heatslnks· no assembly required

• Available in single or three phase bridge assemblies

• Available with bracket or bolt mounting • Can be supplied with either DO·4 or DO·5

rectifiers • Blocking voltages to 1600V

Xl\'pe

Dimension Inches Millimeters

A 4.31 109.4 B 0.625 15.87 C 4.0 101.6 D 3.12 79.2

E 0.201 5.10 F 0.265 6.731 G 3/8·16UNC-3A K 3.93 99.8 L 1.5 38.1

M 0.281 7.137 N 0.875 22.22 P 0.625 15.87 Q 3/16 x 5/16

YType

Dimension Inches Millimeters

A 4.0 101.6 B 0.5 12.7 C 2.5 63.5 D 2.56 65.0

E 0.177 4.495 F 0.198 5.029 G 5/16-18UNC-2A -K 3.75 95.2 L 1.25 31.7

M 0.281 7.137 N 0.937 23.79 P 0.625 15.87 Q 3/16 x 5/16

Catalog No.

Y20-B1·1

Y21·B1·1

Y20-Z1·1

Y21·Z1·1

X20-B1·1 X21·B1·1 X34-B1·1 X37·B1·1

X20-Z1·1 X21·Z1·1 X34-Z1·1 X37·Z1·1

E Dla.AC

Type of Circuit Rated Continuous D-C Amperes at 40°C. Maximum Ambient Temperature

Natural Forced Air Convection at 800 LFM

1 Phase 10 20 Bridge 4·1·1·B 14 28

3 Phase 12 36 Bridge 6-1·1·Z 22 66

1 Phase 15 30 Bridge 25 50 4-1·1·B 35 70

43 86

3 Phase 18 54 Bridge 28 B4 6-1·1·Z 35 105

43 130

321

Rectipoint Silicon Power Rectifiers

Code Number Identification

Y 21 20 B N -S

L7/L-s~ Peak

Size of Type of Reverse Type of Heat Sink Diode Voltage

x- 3"x4" 20 Y - 2'12 "x2'f,' 21

34 20-200 37 30-300

40-400 60-600 80-800 90-900 100-1000 120-1200 160-1600

Figure 1 Overload Characteristics

'0000

,000

'.::::::"'" ~ ,00

u

~ a:

'" ,

0.01 0.' 1.0 Time (in seconds)

Electrical Specifications

Circuit

B-1 Phase Bridge Z - 3 Phase Bridge

.........

,0 100 ,000 _ .. l¢Bridge

--- = 3<> Bridge

Number of Diodes in Series

Figure 2

Type of Mounting

N - Stud B - Brackets

Number of Diodes Special in Parallel Features

S - Surge Suppressor Furnished

Derating for raised ambients 350

300

250

.~ 200 a: ~ 150

8100

~ 50 ° z '" 0

I I 3<>ror1 Air i'..

I I I"-'~ForrAlr i' ...... i'.. I I ......., I'

~~~veclion r-

I I o 25 50 75 Ambient Temperature (Oel

-..... ~ ~ t--..

r;::: '-'00 '25 ,50 175

Current range -10 to 43 amperes (84 amperes with forced air cooling of 800 LFM) in Single phase bridge 12 to 43 amperes (130 amperes with forced air of 800 LFM) in three-phase bridge. Input Yoltage - up to 460 Yolts RMS. Ambient temperature range - - 65° to + 150°C. Operating frequency - up to 10,000 Hz.

Material Specifications The finned heat sinks are corrosion resistant aluminum alloy. The end plates are molded from glass filled polyester resin. This material Is non-flammable and self-extinguishing and shows no heat distortion at 200°C. It has a tensile strength of approximately 8000 Ibs. per square Inch and a dielectric strength in excess of 300 volts per mil.

322

Silicon Power Rectifer Assemblies Plate Heatsinks

• Complete bridge with heatsinks - no assembly required

• Available in many types of circuit configurations • Incorporating a variety of heat sink sizes • Characterized for natural convection or

forced air cooling • Designs include 00-4, 00-5, 00-8 and 00-9

diodes • Blocking voltages to 1600V

Silicon Power Rectifier Assembly Coding System

K 34 20 B E B S

/11111 I j \ Size of Heat Sink

E - 2"x2" K - 3"x3" G - 5"x5" N - 7"x7"

Type of Diode

20 Series 21 Series

34 Series 37 Series 42 Series 43 Series 53 Series 504 Series

Peak Reverse VoHage

Type of Circuit

Number of Diodes Type of in Series Finish

Type of Mounting

Number of Diodes in Parallel

Single Phase Per leg E - Commercial B - Stud with Per leg

20-200

30-300

40-400 50-500 60-600

H - Hall Wave C - Center Tap

Positive N - Center Tap

Negative D - Doubler B - Bridge M - Open bridge

Three Phase 80-800 Z - Bridge

X - Center Tap 100-1000 Y - Hall Wave

DC Positive 120-1200 Q - Half Wave

DC Negative 160-1600 W - Double Wave

V - Open Bridge

T - High humidity brackets salt spray or insulating

F - Fu ngicide board with mounting bracket

N - Stud with no bracket

C - Bolt BC - Bolt mounting

with one bracket

Special Features

Surge Suppressor

323

Silicon Power Rectifier Assemblies

,.-

~ 5 / C II ~

M J Circuit Size

11/> Bridge 2x2 11/> Bridge 3x3 31/> Bridge 2x2 31/> Bridge 3x3

Same for both circuits


Notes:

2x2

3x3

K

Dim.

K K K K

M P E R H S

M p E R H S

Series 20 & 21

,.-

~ II: l1'

t t

Inches Millimeters

Min. Max. Min. Max.

5.00 5.25 127.0 133.3 5.87 6.12 149.0 155.4 7.25 7.50 184.1 190.5 8.12 8.37 206.2 212.5

0.30 0.32 7.62 8.12 0.74 0.76 18.7 19.3 1.99 2.01 50.5 51.0 2.61 2.63 66.2 66.8 0.86 0.88 21.8 22.3 0.56xO.28 Nom. 14x7.1 Nom.

0.36 0.38 9.14 9.65 1.49 1.51 37.8 38.3 2.99 3.01 75.9 76.4 3.67 3.69 93.2 93.7 0.99 1.01 25.1 25.6 0.31xO.18 Nom. 7.9x4.7 Nom.

1. Current ratings shown are for natural convection cooling, resistive or inductive loads for single phase circuits and all loads for three phase circuits.

324

2. Use 2.0 times the above current ratings for forced convection cooling at 1000LFM. 3. For single phase battery, capacitive, or motor loads; the output current shown above should be

derated to 80% of the values shown. 4. Assemblies with heat sink sizes other than those shown above are available on request for

special applications. Refer to silicon power rectifier assembly coding system.

Silicon Power Rectifier Assemblies Series 20 & 21

Ratings· Average Circuit Output Current· Amperes Diode Series 20 Heat Sink Size 2x2x1f16 inches

AMBIENT 1·PHASE 1·PHASE 1·PHASE 3·PHASE 3·PHASE 3·PHASE 3·PHASE TEMP. ac V. WAVE CTR. TAP BRIDGE V. WAVE BRIDGE CTR. TAP DBL.WYE

40 5.8 11.6 11.6 17.4 17.4 28.4 34.8 70 4.5 9.0 9.0 13.5 13.5 22.0 27.0

100 3.2 6.4 6.4 9.6 9.6 15.6 19.2

Diode Series 20 Heat Sink Size 3x3x1116 Inches

AMBIENT 1·PHASE 1·PHASE 1·PHASE 3·PHASE 3·PHASE 3·PHASE 3·PHASE TEMP.oC V. WAVE CTR. TAP BRIDGE Y2 WAVE BRIDGE CTR. TAP DBL.WYE

40 8.2 16.4 16.4 24.6 24.6 40.0 49.2 70 6.6 13.2 13.2 19.8 19.8 32.3 39.6

100 4.7 9.4 9.4 14.1 14.1 23.0 28.2

Diode Series 21 Heat Sink Size 2x2x1f16 inches

AMBIENT 1·PHASE 1·PHASE 1·PHASE 3·PHASE 3·PHASE 3·PHASE 3·PHASE TEMP. ac V. WAVE CTR. TAP BRIDGE V. WAVE BRIDGE CTR. TAP DBL.WYE

40 7.8 15.6 15.6 23.4 23.4 38.1 46.8 70 6.0 12.0 12.0 18.0 18.0 29.3 36.0

100 4.3 8.6 8.6 12.9 12.9 21.0 25.8

Diode Series 21 Heat Sink Size 3x3x1f16 inches

AMBIENT 1·PHASE 1·PHASE 1·PHASE 3·PHASE 3·PHASE 3·PHASE 3·PHASE TEMP. ac Y2 WAVE CTR. TAP BRIDGE V. WAVE BRIDGE CTR. TAP DBL.WYE

40 11.0 22.0 22.0 33.0 33.0 53.8 66.0 70 8.8 17.6 17.6 26.4 26.4 43.0 52.8

100 6.3 12.6 12.6 18.9 18.9 30.8 37.8

325

Silicon Power Rectifier Assemblies

Circuit Size

14> Bridge 3x3 14> Bridge 5x5 34> Bridge 3x3 34> Bridge 5x5



Notes:

3x3

5x5

Series 34


326


derated to 80% of the val ues shown. 4. Assemblies with heat sink sizes other than those shown above are avaiiable on request for


Silicon Power Rectifier Assemblies Series 34

Ratings· Average Circuit Output Current· Amperes Diode Series 34 Heat Sink Size 3x3x1116 inches

AMBIENT l·PHASE l·PHASE l·PHASE 3·PHASE 3·PHASE 3·PHASE 3·PHASE TEMP. ·C V. WAVE CTR. TAP BRIDGE V. WAVE BRIDGE CTR. TAP DBL.WYE

40 18.0 36.0 36.0 54.0 54.0 88.0 108.0 70 14.5 29.0 29.0 43.5 43.5 70.9 87.0

100 10.5 21.0 21.0 31.5 31.5 51.3 63.0

Diode Series 34 Heat Sink Size 5x5x1116 inches

AMBIENT l·PHASE l·PHASE 1·PHASE 3·PHASE 3·PHASE 3·PHASE 3·PHASE TEMP. ·C '/2 WAVE CTR. TAP BRIDGE V. WAVE BRIDGE CTR. TAP DBL.WYE

40 25.5 50.0 50.0 75.0 75.0 122.3 150.0 70 20.2 40.4 40.4 60.6 60.6 98.8 121.2

100 14.5 29.0 29.0 43.5 43.5 70.9 87.0

Diode Series 37 Heat Sink Size 5x5x1116 inches

AMBIENT l·PHASE 1·PHASE l·PHASE 3·PHASE 3·PHASE 3·PHASE 3·PHASE TEMP. ·C V2 WAVE CTR. TAP BRIDGE V. WAVE BRIDGE CTR. TAP DBL,WYE

40 29.3 57.5 57.5 86.3 86.3 140.6 172.5 70 23.2 46.5 46.5 69.7 69.5 113.6 139.4

100 16.6 33.3 33.3 50.0 50.0 81.5 100.0

327

Silicon Power Rectifier Assemblies Series 42 & 43

Circuit Size

14> Bridge 5x5 14> Bridge 7x7 34> Bridge 5x5 34> Bridge 7x7



Notes:

5x5

7x7

-

I ~

~ I I

r- ;= ;==

Dim.

K K K K

M P E R H S

M P E R H S

r-

l<h I 11 I I

1'7 I Ii

Inches

Min. Max.

9.25 9.75 9.25 9.75

13.0 13.5 13.0 13.5

0.36 0.38 2.49 2.51 4.99 5.01 5.99 6.Q1 0.98 1.00 0.56xO.28 Nom.

0.36 0.38 3.74 3.76 6.99 7.01 7.99 8.01 0.98 1.00 0.56xO.28 Nom.

Millimeters

Min. Max.

234.9 247.6 234.9 247.6 330.2 342.9 330.2 342.9

9.14 9.65 63.2 63.7

126.7 127.2 152.1 152.6

25.1 25.6 14x7.1 Nom.

9.14 9.65 94.9 95.5

177.5 178.0 202.9 203.4

25.1 25.6 14x7.1 Nom.





Ratings· Average Circuit Output Current· Amperes Diode Series 42 Heat Sink Size 5x5x1/8

AMBIENT 1·PHASE 1·PHASE 1·PHASE 3·PHASE 3·PHASE 3·PHASE 3·PHASE TEMP. ·C Yo WAVE CTR. TAP BRIDGE Yo WAVE BRIDGE CTR. TAP DBL,WYE

40 42.0 84.0 84.0 126.0 126.0 205.4 252.0 70 32.0 64.0 64.0 96.0 96.0 156.5 192.0

100 24.0 48.0 48.0 72.0 72.0 117.4 144.0

Diode Series 43 Heat Sink Size 7x7x1/8 inches

AMBIENT 1·PHASE 1·PHASE 1·PHASE 3·PHASE 3·PHASE 3·PHASE 3·PHASE TEMP. ·C V. WAVE CTR. TAP BRIDGE V. WAVE BRIDGE CTR. TAP DBL,WYE

40 52.0 104.0 104.0 156.0 156.0 254.3 312.0 70 40.0 80.0 80.0 120.0 120.0 195.6 240.0

100 28.0 56.0 56.0 84.0 84.0 137.0 168.0

328

Silicon Power Rectifier Assemblies Note: 53 available In blocking voltages from 800 to 1200 volts.

504 available In blocking voltages from 200 to 600 volts.

s

Circuit Size

1 <I> Bridge 5x5 1 <I> Bridge 7x7 3<1> Bridge 5x5 3<1> Bridge 7x7



Notes:

5x5

7x7

,...-'\

6 -L

~ ? F'

Dim.

K K K K

M P E R H S

M P E R H S

H ~ - r , +,

; ,

I

+' ~ E _ J

-,

I' J L +,

+; II H ~J

Inches

Min. Max.

10.5 11.0 10.5 11.0 15.0 15.5 15.0 15.5

0.36 0.38 2.49 2.51 4.99 5.01 5.99 6.01 0.98 1.00 0.56xO.28 Nom.

0.36 0.38 3.74 3.76 6.99 7.01 7.99 8.Q1 0.98 1.00 0.56xO.28 Nom.

Series 53/504

, + ,

, , , , , ,

+ , ,

"-

Millimeters

Min. Max.

266.7 279.4 266.7 279.4 381.0 393.7 381.0 393.7

9.14 9.65 63.2 63.7

126.7 127.2 152.1 153.6 24.8 25.4

14x7.1 Nom.

9.14 9.65 94.9 95.5

177.5 178.0 202.9 203.4

24.8 25.4 14x7.1 Nom.

1. Current ratings shown are for natural convection cooling, resistive or inductive loads for Single phase circuits and all loads for three phase circuits.




Ratings· Average Circuit Output Current· Amperes Diode Series 53/504 Heat Sink Size 5x5x1/8 inches

AMBIENT 1·PHASE 1·PHASE 1·PHASE 3·PHASE 3·PHASE 3·PHASE 3·PHASE TEMP. ·C V. WAVE CTR. TAP BRIDGE V. WAVE BRIDGE CTR. TAP DBL,WYE

40 62.0 124.0 124.0 186.0 186.0 303.0 372.0 70 47.0 94.0 94.0 141.0 141.0 230.0 282.0

100 33.0 66.0 66.0 99.0 99.0 161.0 198.0

Diode Series 53/504 Heat Sink Size 7x7x1/4 inches

AMBIENT 1·PHASE 1·PHASE 1·PHASE 3·PHASE 3·PHASE 3·PHASE 3·PHASE TEMP. ·C V. WAVE CTR. TAP BRIDGE V2 WAVE BRIDGE CTR. TAP DBL,WYE

40 81.0 162.0 162.0 243.0 243.0 396.0 486.0 70 63.0 126.0 126.0 189.0 189.0 308.0 378.0

100 45.0 90.0 90.0 135.0 135.0 220.0 270.0

329

Silicon Rectifier Assemblies ''W'' Heatsinks

• Complete bridge with heatsinksno assembly required

• Available in single and three phase bridge assemblies

• Characterized for natural convection or forced air cooling

• Designs include DO-8 and DO·9 diodes • Blocking voltages to 1200 volts

Single Phase Bridge Dimension Inches

Minimum

A 6.25 B 7.99 C 9.99

D 8.99 E 7.24 F 0.34 Dia.

Three Phase Bridge Dimension Inches

Minimum

A 8.75 B 9.99 C 10.Q1

D 8.99 E 7.24 F 0.34 Dia.

330

~------c------~

~------D------~

Single Phase Bridge

Millimeters Maximum Minimum Maximum

6.75 158.7 171.4 8.Q1 202.9 203.4

10.01 253.7 254.2

9.01 228.3 228.8 7.26 183.8 184.4

8.63 Dla.

MIllimeters

Maximum Minimum Maximum

9.25 222.2 234.9 10.01 253.7 254.2 253.7 254.2

9.01 228.3 228.8 7.26 183.8 184.4

8.63 Dia.

Silicon Rectifier Assemblies ''W'' Heatsinks

Silicon Rectifier Assemblies Coding System

W ~ ~ B

LLLLL Type of Diode


Type of Circuit

Number of Diodes in Series

Number of Diodes In Parallel

42 Series 43 Series

53/504 Series 20=200V 30=300V 40 = 400V 50 = 500V 60 = 600V 80 = 800V 100= 1000V 120= 1200V

Single Phase B- Bridge Three Phase Z- Bridge

1 Max. 1 Max.

Note: Series 503 blocking voltages 800 to 1200 volts. Series 504 blocking voltages 100 to 600 volts.

Average Output Current· Amperes (Resistive or Inductive Loads) Single Phase Bridge

Diode Series Ambient Temp. ·C 40 60

42& Natural Convection 120 110 43 Forced Convection" 320 285

503 Natural Convection 200 175 Forced Convection" 500 450

Notes: 1. "At 1000 LFM. 2. For single phase battery, capacitive, or

motor loads; the output current shown above should be derated to 80% of the values shown.

3. Assemblies with heat sink sizes other than those shown are available on request for special applications. Other circuit configurations are also available. Please consult factory.

Average Output Current· Amperes (Resistive or Inductive Loads) Three Phase Bridge

Diode Series Ambient Temp. ·C 40

42& Natural Convection 170 43 Forced Convection" 430

503 Natural Convection 300 Forced Convection" 750

Notes: 1. "At1000LFM.

60

150 380

265 645

2. Assemblies with heat sink sizes other than those shown are available on request for special applications. Other circuit configurations are also available. Please consult factory.

331

High Voltage Silicon Rectifier Assembly Series JHV21

.Supplied in Single Phase Half Wave • Gold Iridited Aluminum Heatslnks • Each Diode is R-C Compensated • 250 Amperes Surge Current (1 Cycle) • Doubler configurations available up to

36 Kv per leg

Dimension Inches MlilimetersNotes

C 1.00 25.40 D 1.00 25.40 E 2.00 50.80 F 4.50 114.30 G 1.00 25.40 H .75 19.05 J 2.00 50.80 K .87 22.26 L

Note 1 '12 -13 Glass Melamine Studs

Catalog PRY Dimension A Number Rating KV Inches

JHV21H8 8 5·1/8 JHV21H12 12 6-1/4 JHV21H16 16 7-3/8 JHV21 H20 20 8-1/2 JHV21 H24 24 9-5/8 JHV21H28 28 10·3/4 JHV21 H32 32 11-7/8 JHV21H36 36 13 JHV21H40 40 14·1/8 JHV21H44 44 15-1/4 JHV21H48 48 16·3/8 JHV21H52 52 17·1/2 JHV21H56 56 18-5/8 JHV21H60 60 19·3/4 JHV21H64 64 20-7/8 JHV21H68 68 22 JHV21H72 72 23-1/8

332

Load: Resistive - inductive. (for capacitive derate 20%)

(-~ ----- -- ..6(+)

B

Mounting: Horizontal (convection cooling) Horizontal or vertical (forced air)

±3/16(4.76) Dimension B Millimeters Inches Millimeters

130.18 7-1/4 185.15 158.75 8·1/4 209.55 187.33 9-1/2 241.30 215.90 10-1/2 266.70 244.48 11·3/4 298.45 273.05 12-3/4 323.85 301.63 14 355.60 330.20 15 381.00 358.78 16-1/4 412.75 387.35 17-1/4 438.15 415.92 19-1/2 469.90 444.50 19-1/2 241.30 473.07 20-3/4 527.05 501.65 21-3/4 552.45 530.22 23 589.20 558.80 24 609.60 587.37 25-1/4 641.35

High Voltage Silicon Rectifier Assembly

10 9 8 7 en

Q. 6 E « 5

:; 4 Q. 3 :; 2 0 u Cl 0

" 1 Phase Half Wave I-" Convection Cooled

" "" I~ .~

~

'" ~ .,.0 roO COO 00 '),0 .,.0 roO COO ~O " , " " " 'l)

Ambient Temperature 'C

20 18 16

en 14 Q. 12 E « 10

:; B Q. 6 :; 4 0 u 2 0 0

Series JHV21

...-::::: V'

# /'" IJ'/

1 Phase Half Wave

I I II J

I >:l >:l >:l >:l _<'I >:l ..C'I >:l _<'I >:l

,CS '),CS n,CS ~ ",IS 'OCS ,\\J- COCS <!lIS ,OCS

Air Flow-LFM Min.

25'C AMB 40'C AMB 60'C AMB

333

I


• Supplied in Single Phase Half Wave • Gold Irldlted Aluminum Heatsinks • Each Diode is R·C Compensated .700 Amperes Surge Current (1 Cycle) • Doubler configurations available up to

36 Kv per leg

Dimension Inches Millimeters Notes

C 1.00 25.40 0 1.00 25.40 E 2.00 50.80 F 4.50 114.30 G 1.00 25.40 H .75 19.05 J 2.00 50.80 K .87 22.26 L

Note 1 '12 ·13 Glass Melamine Studs


JHV34H8 8 5-1/8 JHV34H12 12 6-1/4 JHV34H16 16 7-318 JHV34H20 20 8-112 JHV34H24 24 9-5/8 JHV34H28 28 10-3/4 JHV34H32 32 11-7/8 JHV34H36 36 13 JHV34H40 40 14-1/8 JHV34H44 44 15-1/4 JHV34H48 48 16-3/8 JHV34H52 52 17-1/2 JHV34H56 56 18-5/8 JHV34H60 60 19-3/4 JHV34H64 64 20-7/8 JHV34H68 68 22 JHV34H72 72 23-1/8

334

Load: Resistive· Inductive. (for capacitive derate 20%)

c-~ _______ -..S.c+)

A

B


:t 3116 (4.76) Dimension B Millimeters Inches Millimeters

130.18 7-1/4 185.15 158.75 8-114 209.55 187.33 9-112 241.30 215.90 10-1/2 266.70 244.48 11-3/4 298.45 273.05 12-3/4 323.85 301.63 14 355.60 330.20 15 381.00 358.78 16-1/4 412.75 387.35 17-1/4 438.15 415.92 19-1/2 469.90 444.50 19-1/2 241.30 473.07 20-3/4 527.05 501.65 21-3/4 552.45 530.22 23 589.20 558.80 24 609.60 587.37 25-1/4 641.35


20 18 16 14

'" 0.12 ~ 10 , 8

~ 6 8 4 () 2 o 0

I I 1 Phase Half Wave f--Convection Cooled

f'... l'-...

......... "-

.......

rvC ""C roC 'OC ,~ ,rvC ,,,,,C ,r§> ,'OC rvCC

Ambient Temperature °C

40 36 32

'" 28

0. 24 E <{ 20

3 16

0. 12 3 8 0 () 4 0 0

~ ~

~

....-: ~ v t/""'

1 Phase Half Wave

I

Series JHV34

25°C AMB 40°C AMB 600C AMB

!:)!:)!:)!:) !:)_C\!:) !:>_C\~C ,C5 rvC5 ".>C5 ""C5 <:,C5 roQ - ,\C5 'OC5 q,\J" ,c"

Air Flow-LFM Min.

335

I

High Voltage Silicon Rectifier Assembly Series LHV34

• Supplied In Single Phase Half Wave • Gold Irldlted Aluminum Heatslnks • Each Diode Is R-C Compensated • 700 Amperes Surge Current (1 Cycle) • Doubler configuration available

up to 36KVlleg

Dimension Inches MllllmetersNotes

C 1.00 o 1.50 E 3.00 F 6.38 G .88 H 1.50 J 1.75 K 1.69 L 3.00 M 1.69 N

Note 1

25.40 38.10 76.20

161.93 22.23 38.10 44.45 42.86 76.20 42.86

'h -13 Glass Melamine Studs

Catalog PRY Number Rating KV

LHV34H8 8 LHV34H12 12 LHV34H16 16 LHV34H20 20 LHV34H24 24 LHV34H28 28 LHV34H32 32 LHV34H36 36 LHV34H40 40 LHV34H44 44 LHV34H48 48 LHV34H52 52 LHV34H56 56 LHV34H60 60 LHV34H64 64 LHV34H68 68 LHV34H72 72

336

Dimension A Inches

5-5/8 6-3/4 7-718 9

10-118 11-114 12-318 13-112 14·518 15-314 16-718 18 19-1/8 20-1/4 21-3/8 22-112 23-5/8


(-~ - --------~+)

B


± 3/16 (4.76) Dimension B MIllimeters Inches Millimeters

142.88 7-314 196.85 171.45 8·314 222.25 200.03 10 254.00 228.60 11 279.40 257.18 12-114 311.15 285.75 13-114 336.55 314.33 14·112 368.30 342.90 15-112 393.70 371.48 16-314 425.45 400.05 17-314 450.85 428.63 19 482.60 457.20 20 508 485.77 21-114 539.75 514.35 22-114 565.15 542.92 23-112 596.90 571.50 24-112 622.30 600.07 25-314 654.05


20 18 16

en 14 a. 12 E « 10

'5 8

B- 6 :::J 4 0

c.> 2 Cl 0

I 1 Phase Half Wave l-

I---... Convection Cooled

i"-. "'-

f'.-.. "'- r-....

~

r-.... ').,"> ","> '0"> ~"> ",,>"> ,,17 "","> ,,'0"> ,,~"> ').,,,>">


40 36 32

en 28 a. 24 ~ 20 '5 16 0. 12 ;3 8 c.> Cl

b:::: /-10-

I/.;::: V ~ V

;;;.-:::: '1 Phase Half Wave

~-

; i

Air Flow-LFM Min.

Series LHV34

25'C AMB 60°C AMB 40'C AMB

337

I


• Supplied in Single Phase Half Wave • Gold Iridited Aluminum Heatsinks • Each Diode is R-C Compensated • 1200 Amperes Surge Current (1 Cycle) • Doubler configurations available up to

36 Kvper leg

Dimension Inches MiIIlmetersNotes

C 1.00 25.40 D 1.00 25.40 E 2.00 50.80 F 4.50 114.30 G 1.00 25.40 H .75 19.05 J 2.00 50.80 K .87 22.26 L Note 1 '12 -13 Glass Melamine Studs


JHV36H8 8 5-1/8 JHV36H12 12 6-1/4 JHV36H16 16 7-3/8 JHV36H20 20 8-1/2 JHV36H24 24 9·5/8 JHV36H28 28 10-3/4 JHV36H32 32 11-718 JHV36H36 36 13 JHV36H40 40 14·1/8 JHV36H44 44 15-1/4 JHV36H48 48 16·3/8 JHV36H52 52 17-1/2 JHV36H56 56 18-5/8 JHV36H60 60 19-314 JHV36H64 64 20-7/8 JHV36H68 68 22 JHV36H72 72 23·1/8

338

load: Resistive - inductive. (for capacitive derate 20%)

<-:.........- --------J;L<+)

A


:!: 3116 (4.76) Dimension B Millimeters Inches Millimeters

130.18 7-1/4 185.15 158.75 8·1/4 209.55 187.33 9·1/2 241.30 215.90 10·1/2 266.70 244.48 11·3/4 298.45 273.05 12·3/4 323.85 301.63 14 355.60 330.20 15 381.00 358.78 16·1/4 412.75 387.35 17-1/4 438.15 415.92 19-1/2 469.90 444.50 19·1/2 241.30 473.07 20·3/4 527.05 501.65 21-3/4 552.45 530.22 23 589.20 558.80 24 609.60 587.37 25·1/4 641.35


20 18 16

rn 14 Co 12 E < 10

:; 8 Co 6 :; 4 0 u 2 Cl 0

I I I 1 Phase Half Wave -Convection Cooled

-.......

......

i'-.. i'-..

t6J ~ ro~ 'b~,,~ "",~ ,,~ "r§l "r§> "'~ Ambient Temperature DC

40 36 32

rn 28 Co 24 ~ 20 :; 16 Co 12 8 8 u 4 Cl 0

~ ~ /"

/,; "/ V/

~ ;;-

...- t::::- --;..-: ,....

1 Phase Half Wave I I I I I I I I I

Series JHV36

--2SDC AMB 40"CAMB 60"C AMB

,,~ #' ~~ ~~~ ~~ ro~ '\~ 'b~ #' #' "

Air Flow-LFM Min.

339


• Supplied in Single Phase Half Wave • Gold Iridited Aluminum Heatslnks • Each Diode is R-C Compensated • 1200 Amperes Surge Current (1 Cycle) • Doubler configuration available

up to 36KVlleg


C 1.00 25.40 0 1.50 38.10 E 3.00 76.20

F 6.38 161.93 G .88 22.23 H 1.50 38.10 J 1.75 44.45 K 1.69 42.86 L 3.00 76.20 M 1.69 42.86 N



LHV36H8 8 5-5/8 LHV36H12 12 6-3/4 LHV36H16 16 7-7/8 LHV36H20 20 9 LHV36H24 24 10-1/8 LHV36H28 28 11-1/4 LHV36H32 32 12-3/8 LHV36H36 36 13-1/2 LHV36H40 40 14-5/8 LHV36H44 44 15-3/4 LHV36H48 48 16-7/8 LHV36H52 52 18 LHV36H56 56 19-1/8 LHV36H60 60 20-1/4 LHV36H64 64 21-3/8 LHV36H68 68 22-1/2 LHV36H72 72 23-5/8

340


(-~ - --------~+)

Il-A--+ I B--------------~


± 3/16 J4.7~) Dimension B Millimeters Inches Millimeters

142.88 7-3/4 196.85 171.45 8-3/4 222.25 200.03 10 254.00 228.60 11 279.40 257.18 12-1/4 311.15 285.75 13-1/4 336.55 314.33 14-1/2 368.30 342.90 15-1/2 393.70 371.48 16-3/4 425.45 400.05 17-3/4 450.85 428.63 19 482.60 457.20 20 508 485.77 21-1/4 539.75 514.35 22-1/4 565.15 542.92 23-1/2 596.90 571.50 24-1/2 622.30 600.07 25-3/4 654.05


20 18 16

(I) 14 0. 12 E <{ 10

'5 8 B- 6 ::l 4 0 () 2 0 0

I-- - tt8- -f- '"' 1 Phase Half Wave -

Convection Cooled i I

"" T

'" '---- -- f--- t- - --- ""'J i"-... I '" 'l"C) ",C) roC) q,C) ,C)C) ,'l"C) ,,,,C) ,roC) ,q,C) 'l"C)~

Ambient Temperature DC

(I)

0. E

<{

'5 0. '5 0 () 0

40 36 32

r-,----,-~----,-::.j;~1~~~~1~~~~ 25D

C AMB 40DC AMB 60DC AMB

28 24 20 16 12

I - --- 1 ___ , -,-

_ -+-_u:",l_p!1a~~_~ave j _--'-_

8-,_ I -l-~- ~_L_LI L 4

0 C)C) R:JC) ~C) ~C) ~C) ~C) C)C) ~C) .,C) .,C) ... ~ ~ ~ ~ ~ ~ ~ ~ ~

Air Flow-LFM Min.

341


• Supplied in Single Phase Half Wave • Gold Iridited Aluminum Heatsinks • Each Diode is R-C Compensated • 1500 Amperes Surge Current (1 Cycle) • Doubler configurations available up to

36 Kv per leg


C 1.00 25.40 D 1.00 25.40 E 2.00 50.80 F 4.50 114.30 G 1.00 25.40 H .75 19.05 J 2.00 50.80 K .87 22.26 L



JHV37H8 8 5-118 JHV37H12 12 6-114 JHV37H16 16 7-318 JHV37H20 20 8-112 JHV37H24 24 9-518 JHV37H28 28 10-314 JHV37H32 32 11-718 JHV37H36 36 13 JHV37H40 40 14-118 JHV37H44 44 15-1/4 JHV37H48 48 16-318 JHV37H52 52 17-1/2 JHV37H56 56 18-5/8 JHV37H60 60 19-3/4 JHV37H64 64 20-7/8 JHV37H68 68 22 JHV37H72 72 23-1/8

342


(-:........- --------J;i.(+)

~-------------- B -----------


± 3/16 (4.76) Dimension B Millimeters Inches Millimeters

130.18 7-1/4 185.15 158.75 8-114 209.55 187.33 9-112 241.30 215.90 10-1/2 266.70 244.48 11-3/4 298.45 273.05 12-314 323.85 301.63 14 355.60 330.20 15 381.00 358.78 16-1/4 412.75 387.35 17-1/4 438.15 415.92 19-1/2 469.90 444.50 19-1/2 241.30 473.07 20-3/4 527.05 501.65 21-3/4 552.45 530.22 23 589.20 558.80 24 609.60 587.37 25-1/4 641.35


20 18 16

en 14 a. 12 E < 10 ,

8 :; a. 6 :; 4 0 u 2 0 0

I I 1 Phase Half Wave I--

I--r--. Convection Cooled

J'.. i"'..

I'... "-

"'-r--...

........

'J,<:) ",<:) '0<:) '0<:) "r§' ,,'J,<:) ~<:) "ro<:) ,,'0<:) 'J,r§'

Ambient Temperature ·C

40 36 32

en 28 ~ 24 < 20 ~ 16 a. 12 8 8 u 4 o 0

-- f.::::. ..... -::::;. -~

.....-::: /': ,./ fi '/'

h '/" V/ 1 Phase Ha~ Wave

Air Flow-LFM Min.

Series JHV37

--

25·C AMB 40·C AMB 600C AMB

343


• Supplied In Single Phase Half Wave • Gold Irldited Aluminum Heatslnks • Each Diode Is R·C Compensated • 1500 Amperes Surge Current (1 Cycle) • Doubler configuration available

up to 36KVlleg

Dimension Inches MillimetersNotes

C 1.00 25.40 0 1.50 38.10 E 3.00 76.20

F 6.38 161.93 G .88 22.23 H 1.50 38.10 J 1.75 44.45 K 1.69 42.86 L 3.00 76.20 M 1.69 42.86 N

Note 1 y, ·13 Glass Melamine Studs


LHV37H8 8 5·518 LHV37H12 12 6-314 LHV37H16 16 7·718 LHV37H20 20 9 LHV37H24 24 10·118 LHV37H28 28 11·114 LHV37H32 32 12·318 LHV37H36 36 13·112 LHV37H40 40 14·518 LHV37H44 44 15·3/4 LHV37H48 48 16·718 LHV37H52 52 18 LHV37H56 56 19·118 LHV37H60 60 20·114 LHV37H64 64 21-3/8 LHV37H68 68 22·112 LHV37H72 72 23·518

344

M

Load: Resistive· inductive. (for capacitive derate 20%)

(-~---------~+)

!l-A_--+ 1-1 ------- B --------<


:!: 3116 (4.76) Dimension B Millimeters Inches Millimeters

142.88 7-314 196.85 171.45 8-314 222.25 200.03 10 254.00 228.60 11 279.40 257.18 12·1/4 311.15 285.75 13·1/4 336.55 314.33 14·1/2 368.30 342.90 15·112 393.70 371.48 16·314 425.45 400.05 17·3/4 450.85 428.63 19 482.60 457.20 20 508 485.77 21·1/4 539.75 514.35 22·114 565.15 542.92 23·1/2 596.90 571.50 24·112 622.30 600.07 25·314 654.05


20 18 16

<J) 14 Co 12 E « 10

:; 8 Co 6 :; 4 0 0 2 D 0

-++-i--t~ I--"- 1 Phase Half Wave

I---

" Convection Cooled ~i -,

" I

- r- t--- .- . _ .. - -~ --,--

,

"

40 25°C AMB 36 40°C AMB 32 60°C AMB

<J) 28 Co 24 --or E I « 20

:; 16 Co 12 :; B-0 0 4 D 0

~~~~~~~~~# ~#####~##~ Ambient Temperature °C Air Flow-LFM Min.

345


• Supplied in Single Phase Half Wave • Gold Iridited Aluminum Heatsinks • Each Diode is R-C Compensated • 2500 Amperes Surge Current (1 Cycle) • Doubler configuration available

up to 16KVlleg


C 1.00 25.40 D 1.25 31.75 E 1.50 3B.10

F 1.50 3B.10 G 1.25 31.75 H 5.50 139.70 J 1.BB 47.75 K .BB 22.35 L .BB 22.35 M 1.BB 47.75 N 5.50 139.10 P 1 Q . 2BDia. 7.14 Dia . 2

Note 1 '12 - 13 Glass Melamine Studs

Note 2 Holes ( +) ( -) Conn.

Catalog PRV Dimension A Number Rating KV Inches

LHV43HB B 10-1/8 LHV43H12 12 13-5/8 LHV43H16 16 17-1/B LHV43H20 20 20-5/8 LHV43H24 24 24-1/B LHV43H2B 2B 27-5/8 LHV43H32 32 31-1/B

40 36 32

'" 28

a. 24 E 4: 20

:5 16

a. 12 :5 8 0 () 4 Cl 0

- r---' K 1 Phase Half Wave t---.- - ,Convection Cooied

'"' ........

""" """ i"'--. " '1,,1;) ",I;) rol;) q,1;) "I;)I;) ,,'1,,1;) "",I;) "rol;) "q,1;) <6'1;)

Ambient Temperature 'C

346

'" a. E 4:

:5 a. :5 0 () Cl

~~~{ . . H

- I F I

v ~ -t i

~"~""~r Load: Resistive - inductive. (for capacitive derate 20%)

,~·-------A, (-)

t----- ---A-

1----------- B --.

Mounting: Horizontal (convection cooling)

± 3/16 (4.76) Millimeters

257.30 346.20 435.10 524.00 612.90 701.BO 790.70

80 72 64 56 4B 40 32 24

~ ~ ~ V /"""

16 8 0

Horizontal or vertical (forced air)

Dimension B Inches

12-1/2 15-3/4 19-1/4 22-3/4 26-1/4 29-3/4 33-1/4

~ -~ l-I--

1 Phase Half Wave I I I I I I

Millimeters

317.50 400.05 48B.95 577.B5 666.75 755.65 844.55

>--- 25'C AMB 40'C AMB 60'C AMB

High Voltage Silicon Rectifier Assembly Series SHV43

• Supplied in Single Phase Half Wave • Gold Iridited Aluminum Heatsinks • Each Diode is R·C Compensated • 2500 Amperes Surge Current (1 Cycle) • Doubler configurations available up to

16 Kv per leg

Dimension Inches MillimetersNotes

C 1.00 25.40 D 1.50 38.10 E 1.50 38.10 F 2.50 63.50 G 2.50 63.50 H 1.50 38.10 J 1.88 47.75 K 2.50 63.50 L 8.00 203.20 M 8.00 203.20 N .28 Dia. 7.14 Dia. P

Note 1 V. ·13 Glass Melamine Studs

Catalog Number

SHV43H8 SHV43H12 SHV43H16 SHV43H20 SHV43H24 SHV43H28 SHV43H32

60 54 48

(J) 42 ~ 36 <{ 30 :.. 24 6. 18

{3 12 () 6 o 0

r--,

PRY Dimension A Rating KV Inches

8 10·118 12 13·5/8 16 17·118 20 20·5/8 24 24·1/8 28 27·5/8 32 31-118

I I I I I I I I

1 Phase Half Wave -Convection Cooled

" " "-~

i"'.. 'l"C) .,.C) roC) 'OC) ,C)C) ,1' ,.,.C) ,roC) ,'OC) 'l"C)C)

Ambient Temperature ·C

(J) Q.

E <{

'5 Q.

'5 0 () 0

Load: Resistive· inductive. (for capacitive derate 20%)

,~·------A,

i -------- -- --- A

~--------- ---8


±3/16 (4.76) Dimension B Millimeters Inches

257.30 12·1/2 346.20 15·3/4 435.10 19·1/4 524.00 22·3/4 612.90 26·1/4 701.80 29-3/4 790.70 33·1/4

150 135 120 105 90 75 60 45 30 15 a

......-:::: :::::::: -::::2 p...-I-:::;::: t:;:::::'

1 Phase Half Wave I J II I I I I

Air Flow-LFM Min.

MIllimeters

317.50 400.05 488.95 577.85 666.75 755.65 844.55

25·C AMB 400C AMB 600C AMB

347

Encapsulated Assemblies 12Amp

The Series EH Is a high current encapsulated assembly with a single phase and three phase full wave bridge rating of 1600 PRY. It Is completely sealed, compact, corrosion and moisture resistant.

Ratings for both single and three phase full wave bridge circuits are shown. These assemblies are available In a variety of circuit configurations. Information concerning special application Is available on request.


A 2.25 57.2 B C 1.75 44.5 0 1.75 44.5

E 1.313 33.35 F 0.B75 22.23 Note 1 Mounting hole .172 (4.37 mm) Dla.

Catalog Max.PRV Catalog Number Rating Per Number (Single Circuit Arm (Three Phase) Phase)

EH*1B1 100 EH*1Z1 EH*2B1 200 EH*2Z1 EH*3B1 300 EH*3Z1 EH*4B1 400 EH*4Z1

EH*5B1 500 EH*5Z1 EH*6B1 600 EH*6Z1 EH*7B1 700 EH*7Z1 EH*BB1 BOO EH*BZ1

EH*9B1 900 EH*9Z1 EH*10B1 1000 EH*10Z1

EH*12B1 1200 EH*12Z1 EH*14B1 1400 EH*14Z1 EH*16B1 1600 EH*16Z1

* S-Stud Terminal F-Faston Terminal

348

Series EH

Single Phase Three Phase

~ c::>

Stud Terminals

~c::> Stud Terminals

~c::> Faston Terminals ~ Faston

Terminals


r::Ej ~ ~

LFj

Circuit: Single phase and three phase full wave

AC Input: DC Output:

Surge Current

bridge up to 1600 PRY up to 12 Amps DC (25°C Amb.Chassis mounted)

Rating: 250 Amps peak for one cycle (25°C Amb.)

Loads: Resistive, Inductive, Capacitive Duty Cycle: Continuous Cooling: Convection Design Features: The series EH diodes are housed In an

epoxy sealed case. Convenient faston or stud terminals as specified. High current rating for compact size.

Single·phase and three·phase bridge current ratings

14 til

~ 12 « ~ () 10 Cl I B.O

E

'" ~ Resistive-Inductive Loads

~ 6.0 :; () 4.0

u.~ 2.0

o

'" ~ , " ~

Capacitive Loads '~ ~ '",

20 40 60 80 100 120 140


160

Encapsulated Assemblies 3Amp

Encapsulated in a rounded case, this assembly is rated to 1600 PRY in a full wave bridge circuit. It is completely sealed, compact, corrosion, and moisture resistant.

Ratings for the popular single phase full wave bridge circuit, Incorporating Series 14 and Series 21 diodes, are given below.

These assemblies are available In a variety of circuit configurations. Information concerning special application Is available on request.

Dimension A B C D E Note 1

Inches 1.31 0.44 1.06 0.47

%" . 20 Mounting Stud

Catalog Number ER*1 B1 ER*2B1 ER*3B1 ER*4B1 ER*5B1 ER*6B1 ER*7B1 ER*SB1 ER*9B1 ER*10B1 ER*12B1 ER*14B1 ER*16B1

Millimeters 33.3 11.1 26.9 11.9

Notes

MaxlmumPRV Rating Per Circuit Arm 100 200 300 400 500 600 700 SOO 900 1000 1200 1400 1600

F12-Faston terminal with Series 14 diode F21-Faston terminal with Series 21 diode L12-Flexlble lead with Series 14 diode

(min. length· 4') L21-Flexlble lead with Series 21 diode

(min. length· 4'')

Series ER

Faston Terminals Flexible Leads

Electrical Characteristics Circuit: Single phase full wave bridge AC Input: up to 1600 PRY DC Output: (Series 14) up to 2.5 Amps DC (40°C

Amb.); (Series 21) up to 3. Amps DC (40 °CAm b.)

Surge Current Ratings: (Series 14) 35 Amps peak for one cycle

(25°C Amb.); (Series 21) 250 Amps peak for one cycle (25°C)

Loads: Resistive, Inductive, Capacitive Duty Cycle: Continuous Cooling: Convection Design Features: diodes housed In an epoxy sealed

case. Faston terminals or flexible leads.

Single·phase bridge current ratings (resistive-inductive) loads derate 20% for capacitive load

3.6

~ '" Q.

~ 3.0

g 2.4 I

1: 1.8 ~ :; o 1.2

", ~ , , '" ~Series 21

"<:~ Series 12<~

t-.... u..-g 0.6

'~ o

20 40 60 so 100 120


140

349

Encapsulated Assemblies 1.25 Amp

This high·voltage, encapsulated assembly carries a half·wave rating of 34,000 PRY and a doubler rating of 12,000 PRY. Completely sealed, compact, corrosion and moisture resistant.

Ratings for the popular single·phase half· wave circuit are given below.

These assemblies are available in a variety of circuit configurations. Information concerning special application is available on request.

Catalog No.: EFTD12 Max. PRY Rating per circuit arm: 12KV

Dimension Inches Millimeters Notes A 5.50 139.7 B 6.625 168.3 C 1 D 2

E 4.38 11.1 F .313 7.14 G 1.25 31.8 Note 1 .375" (9.53 mm) Dia. cs .1875" (4.763 mm) Dia. Note 2 .313" (7.94 mm)

Circuit Diagram

Curve #1

350

2 3

16 20 24

KV Unit

Series EF Doubler

n

~ ---e----

A

B

Electrical Characteristics Circuit: Doubler AC Input: up to 12,000 PRY per arm DC Output: Up to 1.25 Amps DC (see curve) Surge Current

c

0

Ratings: 50 Amps peak for 1 cycle (25°C Amb.) Loads: Resistive, Inductive, Capacitive Duty Cycle: Continuous Cooling: Convection Design Features: These diodes are housed in an epoxy

sealed case with easily soldered turret terminals. Faston terminals or flexible leads.

Single·phase half wave current ratings

'" a. E « 0 0 I

C l!? :; 0 -c ;;: u.. ci> ~

1.4 r---,--.,----,----,.-----,

1.2

1.0

0.8

0.6

0.4

0.2 20 40

Resistive·lnductive Loads Derate 20% For Capacitive Loads

60 80 100 Ambient Temperature °C

120

Encapsulated Assemblies 1.25 Amp

The Series EF high voltage, encapsulated assembly carries a half wave rating of up to 24,000 PRY. It is completely sealed, compact, corrosion and moisture resistant.

Ratings for the popular single phase half wave circuit are shown.

These assemblies are available in a variety of circuit configurations. Information concerning special application is available on request.

Dimension Inches Millimeters Notes A 1 B 5.50 139.7 C 6.00 152.4 D 6.625 168.3 E 1.25 31.8 F 1.25 31.8 G 1.688 42.88

Note 1 .2031" (5.159 mm) Dia. Hole

Catalog Number EF'H16 EF'H20 EF'H24 • T-Turret terminals

MaxlmumPRV Rating Per Circuit Arm 16KV 20 KV 24KV

F-Faston terminals available upon request

L-Flexible leads (min. length· 4")

Curve #1 2 3

16 20 24

KV Unit

Series EF Half Wave

[email protected].

B

~------------- C ------------~

D

Electrical Characteristics Circuit: Single phase half wave AC Input: up to 24,000 PRY DC Output: up to 1.25 Amps DC (see curve) Surge Current Ratings: 50 Amps peak for 1 cycle (25°C Amb.) Loads: Resistive, Inductive, Capacitive Duty Cycle: Continuous Cooling: Convection Design Features: These diodes are housed in an epoxy

sealed case; Easily soldered faston terminals or flexible leads.

Single-phase half-wave current ratings

'" c. E <: () Cl I

c: ~ :; ()

-0 ;;: LL

cil ~

1.4 ~--~----"""'----'-----r"-----'

1.2

1.0

0.8

0.6

0.4

0.2 20 40

Resistive·lnductive Loads Derate 20% For Capacitive Loads

60 80 100 Ambient Temperature °C

120

351

BUZ Cross Reference

Summary of Types

T T

T T

T T

T

T T

• •

Small Signal Transistors

Type Ordering code

P channel BSS 110 062702-S0489 BSS92 062702-S0458

N channel BSS 100 062702-S0483

BSS87 062702-S453 BSS89 062702-S455 BSS91 062702-S457 BSS93 062702-S459 BSS95 062702-S461 BSS97 062702-S463 BSS 101 062702-S0484

Power Transistors

Type Ordering code

N channel BUZ10 C67078-A 1300-A2 BUZ10A C67078-A 1300-A3 BUZ 11 C67078-A 130 1-A2 BUZ 11A C67078-A 1301-A3 BUZ14 C67078-A 1 000-A2 BUZ15 C67078-A 1001 -A2 BUZ17 C67078-A 1600-A2 BUZ18 C67078-A 1601-A2 BUZ71 C67078-A 1316-A2 BUZ 71A C67078-A 1316-A3

BUZ20 C67078-A 1 302-A2 BUZ21 C67078-A 1308-A2 BUZ23 C67078-A 1 002-A2 BUZ24 C67078-A 1 003-A2 BUZ25 C67078-A 1 011-A2 BUZ27 C67078-A 1602-A2 BUZ28 C67078-A 1608-A2 BUZ72A C67078-A 1313-A3

BUZ30 C67078-A 1303-A2 BUZ31 C67078-A 1304-A2 BUZ32 C67078-A 131 0-A2 BUZ33 C67078-A 1 004-A2 BUZ34 C67078-A 1005-A2 BUZ35 C67078-A 1014-A2 BUZ36 C67078-A 1 018-A2

T New type • Not for new design!

354

Vos V

- 50 -200

100

200 200 200 200 200 200 200

Vos V

50 50 50 50 50 50 50 50 50 50

100 100 100 100 100 100 100 100

200 200 200 200 200 200 200

10 Ros(on) Case A n

-0,17 10,0 TO 92 -0,15 20,0 TO 92

0,23 6,0 TO 92

0,50 6,0 SOT 89 0,30 6,0 TO 92 0,35 6,0 TO 18 0,50 6,0 TO 39 0,80 6,0 TO 202 1,50 2,0 TO 202 0,16 12,0 TO 92

10 ROS(on) Case A n

12 0,1 TO 220 12 0,12 TO 220 30 0,04 TO 220 25 0,06 TO 220 39 0,04 T03 45 0,03 T03 32 0,04 TO 238 37 0,03 TO 238 12 0,1 TO 220 12 0,12 TO 220

12 0,2 TO 220 19 0,1 TO 220 10 0,2 T03 32 0,06 T03 19 0,1 T03 26 0,06 TO 238 18 0,1 TO 238 9,0 0,25 TO 220

7,0 0,75 TO 220 12,5 0,2 TO 220 9,5 0,4 TO 220 7,2 0,75 T03

14 0,2 T03 9,9 0,4 T03

22 0,12 T03

Summary of Types

T

T

T T

• •

T T

T T

Power Transistors

Type Ordering code

BUZ37 C67078-A 1603-A2 BUZ38 C67078-A 1611-A2 BUZ 73A C67078-A1317-A3

BUZ60 C67078-A 1312-A2 BUZ 60 B C67078-A 1312-A4 BUZ 63 C67078-A 1 016-A2 BUZ 63 B C67078-A 1 016-A4 BUZ 64 C67078-A 1017 -A2 BUZ67 C67078-A 161 0-A2 BUZ76 C67078-A 1315-A2 BUZ 76A C67078-A 1315-A3

BUZ40 C67078-A 1305-A2 BUZ 41A C67078-A 1306-A3 BUZ42 C67078-A 1311-A2 BUZ43 C67078-A 1 006-A2 BUZ44A C67078-A 1007 -A3 BUZ45 C67078-A 1 008-A2 BUZ45A C67078-A 1 008-A3 BUZ45B C67078-A 1 008-A4 BUZ46 C67078-A 1 015-A2 BUZ48 C67078-A 1605-A2 BUZ48A C67078-A 1605-A3 BUZ74 C67078-A 1314-A2 BUZ 74A C67078-A 1314-A3

BUZ80 C67078-A 1309-A2 BUZ 80A C67078-A 1309-A3 BUZ83 C67078-A 1 012-A2 BUZ 83A C67078-A 1 012-A3 BUZ84 C67078-A 1 013-A2 BUZ 84A C67078-A 1 013-A3 BUZ88 C67078-A 1609-A2 BUZ 88A C67078-A 1609-A3

BUZ 50A C67078-A 1307 -A3 BUZ 50B C67078-A 1307-A4 BUZ 53A C67078-A 1 009-A3 BUZ54 C67078-A 101 0-A2 BUZ 54A C67078-A 101 0-A3 BUZ 57A C67078-A 1606-A3 BUZ58 C67078-A 1607 -A2 BUZ 58A C67078-A 1607 -A3

T New type • Not for new design!

VDS

V

200 200 200

400 400 400 400 400 400 400 400

500 500 500 500 500 500 500 500 500 500 500 500 500

800 800 800 800 800 800 800 800

1000 1000 1000 1000 1000 1000 1000 1000

ID RDS (on) Case A n

13 0,2 TO 238 18 0,12 TO 238 5,8 0,6 TO 220

5,5 1,0 TO 220 4,5 1,5 TO 220 5,9 1,0 T03 4,5 1,5 T03

10,5 0,4 T03 9,6 0,4 TO 238 3,0 1,8 TO 220 2,6 2,5 TO 220

2,5 4,5 TO 220 4,5 1,5 TO 220 4,0 2,0 TO 220 2,8 4,5 T03 4,8 1,5 T03 9,6 0,6 T03 8,3 0,8 T03

10 0,5 T03 4,2 2,0 T03 7,8 0,6 TO 238 6,8 0,8 TO 238 2,4 3,0 TO 220 2,0 4,0 TO 220

2,6 4,0 TO 220 3,0 3,0 TO 220 2,9 4,0 T03 3,4 3,0 T03 5,3 2,0 T03 6,0 1,5 T03 4,3 2,0 TO 238 5,0 1,5 TO 238

2,5 5,0 TO 220 2,0 8,0 TO 220 2,6 5,0 T03 5,3 2,0 T03 4,6 2,6 T03 2,5 5,0 TO 238 4,3 2,0 TO 238 3,7 2,6 TO 238

355

Rep. Listing

SALES REPRESENTATIVES LISTING EASTERN REGION

ANCHOR ENGINEERING 188 Needham St. Newton Upper Falls, MA 02161 (617) 964-6205

ERA,INC. 354 Veterans Memorial Hwy. Commack, NY 11725 (516) 543·0510

ELECTRA SALES CORP. 6493 Ridings Road Syracuse, NY 13206 (315) 463·1248

ELECTRA SALES CORP. 3000 Winton Road Rochester, NY 14623 (716) 461·5252

KLAMCO ELECTRONICS Box 29272 65th Inf. Sta. Rio Piedras, P.R. 00929 (809) 752·6169/6225

ADI, INC. Box 30 Hwy.301 S Smithfield, NC 27577 (919) 934·8136

ADI, INC. Box 746 Ft. Mill, SC 29715 (803) 547·2115

G.F. BOHMAN ASSOCIATES 130 North Park Avenue Apopka, FL 32703 (305) 886·1882

358

G.F. BOHMAN ASSOCIATES 2020 W. McNab Rd. Suite 125 Ft. Lauderdale, FL 33309 (305) 979·0008

G.F. BOHMAN ASSOCIATES 4511 Bayshore Blvd. N.E. St. Petersburg, FL 33703 (813) 511-6120

COMPONENT SALES INC. 3701 Old Court Rd. #14 Baltimore, M D 21208 (301) 484·3647

INTEREP ASSOCIATES, INC. 3116 Triana Blvd. s.w. Huntsville, AL 35805 (205) 533·1730

INTEREP ASSOCIATES, INC. 3176 Terrace Court Norcross, GA 30092 (404) 449·8680

THE KEN DON CO.

29 Kendon Drive Easton, PA 18042 (215) 253·1000

TAl CORPORATION 12 S. Black Horse Pike

Bellmawr, NJ 08031 (609) 933·2600

SALES REPRESENTATIVES LISTING CENTRAL REGION

CAHILL,SCHMITZ·CAHILL 315 N. Pierce SI. SI. Paul, MN 55104 (612) 646·7217

CAHIL,SCHMITZ·CAHIL 208 Collins Road N.E. Cedar Rapids, IA 52406 (319) 377·8219

ELECTRO REPS, INC. 6535 E. 82nd SI. #214 Indianapolis, IN 46250 (317) 842·7202

C.B. JENSEN & ASSOCIATES 2145 Crooks Rd. Troy, M I 48084 (313) 643·0506

METCOM ASSOCIATES CORP. 2 Talcott Rd. Park Ridge, IL 60068 (312) 696·1490

METCOM ASSOCIATES CORP. 237 S. Curtis Rd. West Allis, WI 53214 (414) 476·1300

THOMPSON & ASSOCIATES, INC. 1151·D Lyons Road Dayton, OH 45459 (513) 435·7733

THOMPSON & ASSOCIATES, INC. 23715 Mercantile Road Beachwood, OH 44122 (216) 831·6277

THOMPSON & ASSOCIATES, INC. 3215 Clime Rd. Columbus, OH 43223 (614) 272·2086

BONSER PHILHOWER 689 W. Renner Rd., Suite C Richardson, TX 75080 (214) 234·8438

BONSER PHILHOWER 6644 S. Victor Tulsa, OK 74136 (918) 496·3236

BONSER PHILHOWER Suite 120 8200 Mopac Expressway Austin, TX 78759 (512) 346·9186

BONSER PHILHOWER 11321 Richmond Ave. Suite #100A Houston, TX 77082 (713) 531·4144

BC ELECTRONICS 12756 Boenker Dr. Bridgeton, MO 63043 (314) 291·1101

BC ELECTRONICS 1140 Adams #11 Shawnee Mission, KS 66212

(913) 342·1211

BC ELECTRONICS 2421 Yellow Stone #410 Wichita, KS 67209 (316) 942·9840

359

SALES REPRESENTATIVE LISTING WESTERN REGION

LANGE SALES, INC. 5575 S. Sycamore St. Suite #204 Littleton, CO 80120 (303) 795·3600

LANGE SALES, INC. 1864 S. State St. Salt Lake City, UT 84116 (801) 487·0843

MAGNA SALES 3333 Bowers Ave. #295 Santa Clara, CA 95051 (408) 727·8753

OLSON, FERRE & ASSOCIATES 12727 N. E. 20th, Suite 4 Bellevue, WA 98005 (206) 883·7792

OLSON, FERRE & ASSOCIATES 2215 N. E. Cornell Hillsboro, OR 97123 (503) 640·9660

360

SHEFLER·KAHN CO., INC.

2017 N. 7th St. Phoenix, AZ85006 (602) 257·9015

VARIGON ASSOCIATES 137 Eucalyptus EI Segundo, CA 90245 (213) 322·1120

VARIGON ASSOCIATES 4805 Mercury St. Suite L San Diego, CA 92111 (619) 576'()100

VARIGON ASSOCIATES 2730 San Pedro N.E. Suite H Albuquerque, NM 87110 (505) 344·5503

Quality and Reliability

All Siemens power semiconductors are subjected to 100% testing In production of critical operating parameters, both at ambient and elevated case temperatures.

comprehensive quality assurance procedures consistent with an 0.1 AQL.

These Siemens power semiconductor components have been designed to meet the following environmental tests: These parameters are ensured with

Test

1. High Temperature Storage

2. Low Temperature Storage

3. Temperature Cycling

4. Humidity(1)

5. Blocking Life (ac)

6. Thermal Fatigue

7. Solderability(2)

8. Resistance to Soldering Heat(2)

9. Vlbralion

10. Hermeticity(2)

11. Terminal Strength, Tensile(2)

12. Terminal Strength, Bending(2)

Failure Criteria: Class A: IR>200% IRM

VF>110% VFM IGT>100% IGTM

(1) For plastic encapsu lated devices on Iy. (2) Where applicable (3) Depending on application

Failure Test Conditions Criteria 1000 hr. at T slg max class A

168 hr. at T slg min class B

25 cycles Tslg max to T slg min class B

1000 hr., 40°C, 93% RH class B

1000 hr., VDWM, VRWM, Tj max class A

5000 to 50,000(3) Tj = 50°C to Tj max

235°C±5°C

260°C for 10 sec.

5G, 24 hr. each axis

10" atm cc/sec.

see standard

see standard

Class B:

class A

class B

class B

class B

-

no damage

no damage

IR>1OO% IRM VF>VFM IGT> 100% IGTM

Standard DIN 40046 part 4 IEC68·2·2 B

DIN 40046 part 3 IEC 68·2·1 Aa

DI N 40046 part 14 IEC 68·2·14 Na

DIN 40046 part 5 IEC 68-2·3 Ca

DIN 41794 part 1, 8, 9 IEC 147-4111.1.3

DIN 41794 part 1,8,9 IEC 147·2E·1.3.5, 11.1

DIN 40046 part 18 IEC 68-2·20 Ta1

DIN 40046 part 18 I EC 68-2·20 Ta1

DIN 40046 part 8 IEC 68·2-6 FC

DIN 40046 part 15,44 IEC 68·2·17 Qk

DI N 40046 part 19 I EC 68·2·21 l"a1

DI N 40046 part 19 IEC 66·2·21I"b

Power Semiconductor Lifetime Guarantee ~ Siemens warrants to the original purchase that it will correct any defects In workmanship or material, by repair or replacement, F.O.B. factory or, at Its option, issue credit at the original purchase price, for any silicon power semiconductor bearing the symbol ~ during the life of the equipment In which It Is originally Installed, provided said device is used within manufacturer's published ratings and applied in accordance with good engineering practice. The foregoing warranty Is exclusive and In lieu of all other warranties of quality whether written, oral or Implied (Including any warranty of merchantability or fitness for purpose).

Contact factory for industrial, military or aerospace high reliability requirements.

The Information oontalned here has been carefully reviewed and Is believed to be accurate. However, due to the possib1l1ty of unseen Inaccuracies, no responsibility Is assumed.

This literature does not convey to the purchaser of electronic devices any license under the patent rights of any manufacturer.

Issued by Colorado Components Division 800 Hoyt Street, Broomfield, Colorado 80020, Telephone (303) 469-2161

Siemens Components, Inc. CG/ 21QO-028-121 BNT 15M 3/ 84 PRINTED IN USA

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