COSMA Software withCOSMA Software with:: Edit menu for process recipe edition,Edit menu for process recipe edition,
Adjust menu for process optimizing,Adjust menu for process optimizing,
Maintenance menus for complete equipment Maintenance menus for complete equipment
control via internet with VPN (Virtual Private control via internet with VPN (Virtual Private
Network).Network).CORS Software forCORS Software for:: Data reprocessing (Measures and data Data reprocessing (Measures and data
comparison).comparison).
Equipment Control & SoftwareEquipment Control & Software
A Tool Organized in A Tool Organized in Successive LevelsSuccessive Levels
ActionActionss
ConstructorConstructor
LotsLotsActionsActions
ProcessProcess
Closed-loopClosed-loop
Server for Server for GUIGUI
COSMA COSMA SupervisorSupervisor
Embedded Embedded control PUcontrol PU
Embedded Embedded control control functionfunction
COSMA COSMA ControllerController
Process Process ControllerController
Device Device ControllersControllers
Physical Physical devicesdevices
OperatorOperator
Remote GUIRemote GUI
PC UserPC User
MonitorinMonitoringg
MonitorinMonitoringg
MonitorinMonitoringg
Diagram ModesDiagram Modes
Stand-byStand-byModeMode
Step by stepStep by step
ModeMode
ProductionProductionModeMode
OptimizationOptimizationModeMode
ConstructorConstructorModeMode
Shut downShut downModeMode
NormalNormal
ErrorsErrors
OperatorOperator
ProductionProduction
MaintenanceMaintenance
ConstructorConstructor
A Communicant ToolA Communicant Tool
COSMA COSMA SupervisorSupervisor
COSMACOSMAGUIGUI
Customer Customer Ethernet NetworkEthernet Network
Process Process Control Unit Control Unit
(1)(1)
Process Process Control Unit Control Unit
(2)(2)
Device Device Control (1)Control (1)
EthernetEthernet
Device Device Control (2)Control (2)
EthernetEthernet
WANWAN
VPNVPNADSLADSLFix IPFix IP
FirewalFirewalll
DedicatedDedicatedEthernet Ethernet networknetwork
SystemSystem
ICP Matching networkICP Matching network
Load-lockLoad-lock
RF GeneratorRF Generator
ICP GeneratorICP Generator
Electronic ControlElectronic Control
TMP ControlTMP Control
ICP ReactorICP Reactor
HT/B
T P
ow
er
Supp
lies
HT/B
T P
ow
er
Supp
lies
SystemSystem
TMPTMP
Throttle ValveThrottle Valve
Matching NetworkMatching Network
LiftLift
ICP ReactorICP Reactor
ICP Matching networkICP Matching network
Gas boxGas box
Load-lockLoad-lock
Pumping SystemPumping System
TMPTMP
TVTV
ReactorReactor
Dry PumpDry PumpADP 122ADP 122
Load-L
ock
Valv
e
Load-lockLoad-lock
Gate valve for Gate valve for quick reactor quick reactor venting and venting and
cleaningcleaning
New Inductively Coupled Plasma New Inductively Coupled Plasma source with source with hot walls to hot walls to reduce polymer condensation reduce polymer condensation and and to enhance plasma to enhance plasma cleaningcleaning. It produces High Density Plasma in a wide . It produces High Density Plasma in a wide working pressure range (working pressure range (5 to 100 mT5 to 100 mT) for ) for fast etchingfast etching of up to of up to Ø200 mm wafersØ200 mm wafers,,
Helium assisted heat exchangeHelium assisted heat exchange between cathode, shuttle and between cathode, shuttle and wafer with mechanical clamping to maintain wafer wafer with mechanical clamping to maintain wafer temperature belowtemperature below 100°C100°C,,
Numerous plasma modes accessible in the same Numerous plasma modes accessible in the same process:process:
Inductively Coupled Plasma + RF biasingInductively Coupled Plasma + RF biasing
Reactive Ion EtchingReactive Ion Etching
Inductively Coupled Plasma for low damage etching.Inductively Coupled Plasma for low damage etching.
Reactor Features (1)Reactor Features (1)
Reactor with hot walls enables:Reactor with hot walls enables: Highly selective processes,Highly selective processes, Low contamination of the process chamber.Low contamination of the process chamber.
Low plasma potential Low plasma potential (< 25 Volts)(< 25 Volts) and and automatic self bias regulation giving rise to automatic self bias regulation giving rise to precise control of ion energy enables precise control of ion energy enables (≤ 40 (≤ 40 eV):eV):
Low damage etching with no RF biasing,Low damage etching with no RF biasing, Isotropic etching with low RF biasing,Isotropic etching with low RF biasing, Anisotropic etching with high RF biasing.Anisotropic etching with high RF biasing.
Reactor Features (2)Reactor Features (2)
Electron density : 10Electron density : 101111 to 10 to 101212 e/cme/cm33
PLASMAPLASMA
ICP SourceICP Source
Match BoxMatch Box
RF generator at 2 MHz
ICP Reactor DesignICP Reactor Design
2 MHz Match Box2 MHz Match BoxReactorReactor
Laser windowLaser window
ICP Reactor DesignICP Reactor Design
Match BoxMatch BoxØ280 mm coilØ280 mm coil
Laser windowLaser window Gas shower Gas shower (Thermally isolated)(Thermally isolated)
Quartz tubeQuartz tube
ICP Reactor DesignICP Reactor Design
Water Water cooled coilcooled coil
Quartz tubeQuartz tube(Thermally isolated)(Thermally isolated)
ShieldingShielding(Thermally (Thermally isolated)isolated)
The reactor walls are The reactor walls are thermally isolatedthermally isolated. They are getting hot . They are getting hot during plasma etching. This during plasma etching. This strongly reducesstrongly reduces the the polymer polymer condensationcondensation and the and the cross contaminationcross contamination between different between different processes.processes.
Pression He en fonction du débit- He Pressure Versus He Flow Rate -
0 5 10 15 20 2500
5
10
15
0
Débit He - He Flow Rate - (sccm)Débit He - He Flow Rate - (sccm)
Pre
ssio
n H
e (
Torr
s)Pre
ssio
n H
e (
Torr
s)-
He
Pre
ssure
-Pre
ssure
-
He Pressure vs He Flow RateHe Pressure vs He Flow Rate
Work AreaWork Area
GoalGoal:: Ensure wafer cooling Ensure wafer cooling
The The shuttles are designedshuttles are designed according to wafer size, number of according to wafer size, number of wafers and process recipes wafers and process recipes for optimum process resultsfor optimum process results. The . The use of dedicated shuttles according to process strongly use of dedicated shuttles according to process strongly reduces reduces the cross contaminationthe cross contamination..
Altymid Altymid RingRing
WaferWafer
O’ RingO’ Ring
Base PlateBase Plate
Graphite PlateGraphite Plate
Example of ShuttleExample of Shuttle
The latest submicron technology needs precise monitoring:The latest submicron technology needs precise monitoring: Automatic endpoint detection,Automatic endpoint detection, CCD camera with magnification > 120 X,CCD camera with magnification > 120 X, Laser beam diameter ≤ 20 Laser beam diameter ≤ 20 m.m.
Precise MonitoringPrecise Monitoring
A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.
Interferences lead to a periodic signal having a Interferences lead to a periodic signal having a /2n period versus /2n period versus timetime
InterferencesInterferences
PhotodiodePhotodiode
Laser Endpoint DetectionLaser Endpoint Detection
Reflected beam Reflected beam 11
Interface 1Interface 1
UnderlayerUnderlayerInterface 2Interface 2 Refractive Index Refractive Index
= n= n
TimeTime
Sig
nal
Sig
nal
Laser beamLaser beam
Reflected beam Reflected beam 22
New Inductively Coupled PlasmaNew Inductively Coupled Plasma source with source with hot walls hot walls whichwhich reduces polymer condensation, enhances plasma cleaning, reduces polymer condensation, enhances plasma cleaning, minimizes cross contaminationminimizes cross contamination. It produces High Density . It produces High Density Plasma for uniform etching of films on batch of seven 2” wafers Plasma for uniform etching of films on batch of seven 2” wafers or wafer size up to or wafer size up to 200 mm200 mm,,
Low plasma potentialLow plasma potential (<25 Volts) and automatic self bias (<25 Volts) and automatic self bias regulation to regulation to precisely control the ion energyprecisely control the ion energy,,
Helium assisted heat exchangeHelium assisted heat exchange to maintain to maintain resist resist andand device device integrityintegrity,,
Various shuttles to reduce cross contamination.Various shuttles to reduce cross contamination. They are They are designed to fit with wafers and processes recipes for designed to fit with wafers and processes recipes for the best the best process resultsprocess results,,
Wide process rangeWide process range from isotropic to anisotropic and from isotropic to anisotropic and fast etch fast etch raterate to low etch rate with to low etch rate with very high selectivityvery high selectivity, ,
Laser endpointLaser endpoint for precise for precise process monitoringprocess monitoring,,
Capability of many etching modes from Capability of many etching modes from RIE, ICP + RIE and ICP RIE, ICP + RIE and ICP in the same process recipein the same process recipe..
Recap of Corial 200IL FeaturesRecap of Corial 200IL Features