DFN Limiter Silicon PIN Diode: DH60035-62N Issue Sept 2013
www.cobham.com/microwave
- 1 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Electrical Specifications @ 25°C:
Test condition Min Typ Max Unit Breakdown voltage Vbr Ir = 10 µA 25 50 V
Reverse current at 25°C Ir Vr min = 25 V 10 A
Total capacitance CT Vr= 6V, F = 1 MHz 0.2 0.35 pF
Forward series Resistance Rsf If = 10 mA, F=120 MHz 1.0
I region thickness - 2.0 µm
Minority Carrier Lifetime Tl If=10mA, Ir=6mA 25 ns
Thermal resistance DFN 3L2 Rth Pd=1W 40 °C/W
Parameter Symbol Test condition Min Typ Max Unit
Insertion Loss IL Pin=-10dBm F=2 GHz 0.2 dB
Threshold Power Pin th IL=1dB F=2.7 GHz 10 dBm
Leakage Power Pout F=2.7 GHz @ Pin=50dBm 21 dBm
CW Power Pin CW 2.5 W
Features : Power Handling 2.5W CW Low loss up to 10 GHz Low thermal resistance Surface mount package ROHS compliant MSL1 @ 260°C reflow temperature
Description: Limiter PIN Diodes offer a unique capability to handle moderate CW or pulse power. The limiter diode has low loss performances under the threshold power and a power limiting action above. Due to its specific mesa design and its main parameters accurately chosen and tightly controlled, the DH60035-62N diode achieves an excellent compromise withstanding power with low spike and short recovery time as well as low losses under low signal.
Applications: This serie of diodes operate as power dependent variable resistances and provide passive receiver protection (low noise amplifiers, mixers and detectors).
Maximum Ratings :
Parameter Absolute maximum
Operating temperature (Tj) - 55C, +150°C
Storage temperature - 65°C, +150°C
Reverse Voltage 25 V
Dissipated Power @ Tcase (Tj-Tc)/Rth Nota: any operation above these parameters may cause permanent damages.
RoHS
CompliantRoHS
Compliant
DFN Limiter Silicon PIN Diode: DH60035-62N Issue Sept 2013
www.cobham.com/microwave
- 2 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical performances @ 25°C:
0
5
10
15
20
25
0 10 20 30 40
Pou
t [d
Bm
]
Pin [dBm]
-2,5
-2
-1,5
-1
-0,5
0
0 1 2 3 4 5 6 7 8 9 10
Inse
rtio
n L
oss [
dB
m]
Frequency [GHz]
Vr=0 V
Vr=2 V
Vr=5 V
Vr=10 V
Vr=20 V
-35
-30
-25
-20
-15
-10
-5
0
0 1 2 3 4 5 6 7 8 9 10
In
pu
t R
etu
rn
Lo
ss [
dB
m]
Frequency [GHz]
Vr=0 V
Vr=2 V
Vr=5 V
Vr=10 V
Vr=20 V
-31
-29
-27
-25
-23
-21
-19
-17
-15
0 1 2 3 4 5 6 7 8 9 10
Iso
lati
on
[d
Bm
]
Frequency [GHz]
If=1 mA
If=5 mA
If=10 mA
If=20 mA
If=30 mA
DFN Limiter Silicon PIN Diode: DH60035-62N Issue Sept 2013
www.cobham.com/microwave
- 3 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
ADS equivalent Circuit: Forward Bias
Reverse Bias
DFN Limiter Silicon PIN Diode: DH60035-62N Issue Sept 2013
www.cobham.com/microwave
- 4 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Case style: DFN-3L2 - Package capacitance ≤ 0.10 pF - Package inductance ≤1 nH
Ordering information:
in Bulk : DH60035-62N Tape & Reel, 1000p : DH60035-62NT1; Tape & Reel, 3000p : DH60035-62NT3;
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 1 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Case style: DFN-2L1 Package capacitance = 0.10 pF Package inductance ≤1 nH
Electrical Specifications @ 25°C:
Part number
Vrmax
(V)
Reverse
current (µA)
Total Capacitance* Ct @ Vr, 1MHz (pF)
Rs
@10 mA ,
120MHz
()
Carrier
Lifetime τl @ If=10 mA,
Ir=6mA (µs)
Thermal resistance Rth
@ Pd=1W (°C/W)
max max Vr(V) typ max max typ max
DH50057-90N 50 10 6 0.45 0.7 0.75 0.06 40
DH50101-90N 100 10 6 0.14 0.18 2.0 0.15 60
DH50103-90N 100 10 6 0.2 0.25 1.5 0.5 45
DH50203-90N 200 10 50 0.2 0.25 1.5 0.5 45
DH50209-90N 200 10 50 0.8 1.1 0.6 1.0 28
DH80041-90N 450 10 50 0.14 0.16 2.0* 2.0 50
DH80050-90N 500 10 50 0.25 0.3 0.8* 2.5 40
* Rs @ 100mA
Ordering information: According the part-number above, delivered in bulk or in tape & reel, with suffix T1 for 1000 p per reel or T3 for 3000 p per reel
Features: - Medium power diode up to 50W - Low series resistance - Low capacitance parasitic - Surface mount package - ROHS compliant - MSL1 @ 260°C reflow temperature
Description: This series is designed for switches where low losses are required for cost effective solution. Diodes use mesa design and oxide or glass passivation.
Applications: Its excellent characteristics allow predictable superior performances in medium power applications such as switches for antennas or filter banks.
Maximum Ratings:
Parameter Absolute maximum
Operating temperature (Tj) - 55C, +150°C
Storage temperature - 65°C, +150°C
Dissipated Power @ 25°C (Tj-Ta)/Rth W* Nota: any operation above these parameters may cause permanent damages. * Contact on infinite copper heatsink
RoHS
CompliantRoHS
Compliant
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 2 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH50057-90N
Equivalent Model: Forward Bias
Reverse Bias
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 3 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH50101-90N
Equivalent Model: Forward Bias
Reverse Bias
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 4 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH50203-90N & DH50103-90N
Equivalent Model: Bondwire Model
Reverse Bias
Forward Bias
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 5 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH50209-90N
Equivalent Model: Bondwire Model
Reverse Bias
Forward Bias
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 6 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH80041-90N
Equivalent Model: Forward Bias
Reverse Bias
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 7 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH80050-90N
0,1
1,0
10,0
0 10 20 30 40 50 60 70 80 90 100
Ct
[p
F]
Vr [V]
Ct versus Vr 1 MHz
0,1
1,0
10,0
1 10 100
Rs [
Oh
ms]
If [mA]
Rs versus If 120 MHz
-0,25
-0,2
-0,15
-0,1
-0,05
0
0 1 2 3
Inse
rtio
n L
oss
[dB]
Frequency [GHz]
Insertion Loss10 mA
20 mA
50 mA
100 mA
-50
-40
-30
-20
-10
0 1 2 3
Input
Retu
rn L
oss
[dB]
Frequency [GHz]
Input Return Loss
10 mA20 mA100 mA50 mA
Equivalent Model: Forward Bias
-50
-40
-30
-20
-10
0
0 0,5 1 1,5 2 2,5 3
Isola
tion [dB]
Frequency [GHz]
Isolation
Vr=20 V
Vr=10 V
Vr=35 V
Reverse Bias
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 1 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Case style: DFN-2L1 Package capacitance = 0.10 pF Package inductance ≤1 nH
Electrical Specifications @ 25°C:
Part number
Vrmax
(V)
Reverse
current (µA)
Total Capacitance* Ct @ Vr, 1MHz (pF)
Rs
@10 mA ,
120MHz
()
Carrier
Lifetime τl @ If=10 mA,
Ir=6mA (µs)
Thermal resistance Rth
@ Pd=1W (°C/W)
max max Vr(V) typ max max typ max
DH50057-90N 50 10 6 0.45 0.7 0.75 0.06 40
DH50101-90N 100 10 6 0.14 0.18 2.0 0.15 60
DH50103-90N 100 10 6 0.2 0.25 1.5 0.5 45
DH50203-90N 200 10 50 0.2 0.25 1.5 0.5 45
DH50209-90N 200 10 50 0.8 1.1 0.6 1.0 28
DH80041-90N 450 10 50 0.14 0.16 2.0* 2.0 50
DH80050-90N 500 10 50 0.25 0.3 0.8* 2.5 40
* Rs @ 100mA
Ordering information: According the part-number above, delivered in bulk or in tape & reel, with suffix T1 for 1000 p per reel or T3 for 3000 p per reel
Features: - Medium power diode up to 50W - Low series resistance - Low capacitance parasitic - Surface mount package - ROHS compliant - MSL1 @ 260°C reflow temperature
Description: This series is designed for switches where low losses are required for cost effective solution. Diodes use mesa design and oxide or glass passivation.
Applications: Its excellent characteristics allow predictable superior performances in medium power applications such as switches for antennas or filter banks.
Maximum Ratings:
Parameter Absolute maximum
Operating temperature (Tj) - 55C, +150°C
Storage temperature - 65°C, +150°C
Dissipated Power @ 25°C (Tj-Ta)/Rth W* Nota: any operation above these parameters may cause permanent damages. * Contact on infinite copper heatsink
RoHS
CompliantRoHS
Compliant
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 2 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH50057-90N
Equivalent Model: Forward Bias
Reverse Bias
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 3 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH50101-90N
Equivalent Model: Forward Bias
Reverse Bias
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 4 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH50203-90N & DH50103-90N
Equivalent Model: Bondwire Model
Reverse Bias
Forward Bias
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 5 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH50209-90N
Equivalent Model: Bondwire Model
Reverse Bias
Forward Bias
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 6 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH80041-90N
Equivalent Model: Forward Bias
Reverse Bias
Switching Silicon PIN Diode in DFN-2L1 package Issue: Sept. 2013
www.cobham.com/microwave
- 7 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical Performances: DH80050-90N
0,1
1,0
10,0
0 10 20 30 40 50 60 70 80 90 100
Ct
[p
F]
Vr [V]
Ct versus Vr 1 MHz
0,1
1,0
10,0
1 10 100
Rs [
Oh
ms]
If [mA]
Rs versus If 120 MHz
-0,25
-0,2
-0,15
-0,1
-0,05
0
0 1 2 3
Inse
rtio
n L
oss
[dB]
Frequency [GHz]
Insertion Loss10 mA
20 mA
50 mA
100 mA
-50
-40
-30
-20
-10
0 1 2 3
Input
Retu
rn L
oss
[dB]
Frequency [GHz]
Input Return Loss
10 mA20 mA100 mA50 mA
Equivalent Model: Forward Bias
-50
-40
-30
-20
-10
0
0 0,5 1 1,5 2 2,5 3
Isola
tion [dB]
Frequency [GHz]
Isolation
Vr=20 V
Vr=10 V
Vr=35 V
Reverse Bias
Switching Silicon HV PIN Diode: DFN 2L2 package Issue: October 2013
www.cobham.com/microwave
- 1 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Electrical Specifications @ 25°C:
Part number
Max
Reverse Voltage Vr
(V)
Forward
voltage Vf @ If=100mA
(V)
Total Capacitance
Ct @ Vr=50V,
1MHz (pF)
Rs
@200 mA, 120MHz
()
Carrier Lifetime τl
@ If=10 mA,
Ir=6 mA (µs)
Thermal
Resistance Rth @ Pd=1W
(°C/W)
max max typ max max min max
DH80053 500 1.0 0.9 1.0 0.30 2.5 45.0
DH80055 500 1.0 1.0 1.4 0.25 3.0 40.0
DH80080 800 1.0 0.25 0.45 0.75 2.0 45.0
DH80100 1000 1.0 0.35 0.50 0.65 3.0 35.0
DH80102 1000 1.0 0.65 0.85 0.40 4.0 30.0
Case style: DFN-2L2 Package capacitance ≤ 0.10 pF Package inductance ≤1 nH
Ordering information:
According to the part-number above, delivered in bulk or in tape & reel with suffix T1 for 1000 p per reel or T3 for 3000 p per reel
Features: - High voltage diode up to 1000V - Medium power diode up to 50W - Low series resistance - Low capacitance parasitic - Surface mount package - ROHS compliant - MSL1 @ 260°C reflow temperature
Description: The DFN series is designed for switches where low losses are required for cost effective solution. Diodes use glass passivation technology and mesa design.
Applications: Its excellent characteristics allow predictable superior performances in medium power applications such as switches for antennas or filter banks.
Maximum Ratings:
Parameter Absolute maximum
Operating temperature (Tj) - 55C, +150°C
Storage temperature - 65°C, +150°C
Dissipated Power @ Tcase (Tcase-Tj)/Rth W* Nota: any operation above these parameters may cause permanent damages.
* Contact on infinite copper heatsink
RoHS
CompliantRoHS
Compliant
Switching Silicon HV PIN Diode: DFN 2L2 package Issue: October 2013
www.cobham.com/microwave
- 2 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical performances: DH80053-94N
0,1
1
10
0 20 40 60 80 100
Ct
[pF]
Vr [V]
Ct versus Vr 1 MHz
0,1
1
10
1 10 100 1000
Rs
[Oh
ms]
If[mA]
Rs versus If 120 MHz
-1
-0,8
-0,6
-0,4
-0,2
0
0 1 2 3
Inse
rtio
n L
oss
[d
B]
Frequency [GHz]
Insertion Loss
If=20 mA
If=50 mAIf=100 mAIf=10 mA
-60
-50
-40
-30
-20
-10
0
0 1 2 3
Inp
ut
Retu
rn L
oss
[d
B]
Frequency [GHz]
Input Return Loss
If=20 mAIf=100 mAIf=50 mAIf=10 mA
Equivalent Model: Forward Bias
-35
-30
-25
-20
-15
-10
-5
0
0 1 2 3
Isola
tion
[d
B]
Frequency [GHz]
Isolation
Vr=10V
Vr=20V
Vr=35V
Reverse Bias
Switching Silicon HV PIN Diode: DFN 2L2 package Issue: October 2013
www.cobham.com/microwave
- 3 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical performances: DH80100-94N
0.1
1
10
0 10 20 30 40 50 60
Ct
[pF]
Vr [V]
Ct versus Vr 1 MHz
0.1
1
10
100
1 10 100
Rs
[Oh
ms]
If [mA]
Rs versus If 120 MHz
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0 1 2 3 4 5 6 7
Inp
ut
Re
turn
Lo
ss [
dB
m]
Frequency [GHz]
Id=1 mA
Id=5 mA
Id=10mA
Id=20 mA
Id=50 mA
Id=100 mA
-1,2
-1
-0,8
-0,6
-0,4
-0,2
0
0 1 2 3 4 5 6 7
Inse
rtio
n L
oss [
dB
m]
Frequency [GHz]
Id=1 mA
Id=5 mA
Id=10mA
Id=20 mA
Id=50 mA
Id=100 mA
Equivalent Model: Forward Bias -30
-25
-20
-15
-10
-5
0
0 1 2 3 4 5 6 7
Iso
lati
on
[d
Bm
]
Frequency [GHz]
Vr=0 V
Vr=5 V
Vr=10 V
Vr=20 V
Vr=35 V
Reverse Bias
Switching Silicon HV PIN Diode: DFN 2L2 package Issue: October 2013
www.cobham.com/microwave
- 4 -
Les informations contenues dans ce document demeurent la propriété exclusive de COBHAM MICROWAVE marque commerciale de CHELTON Telecom & Microwave ou de ses représentants et ne peuvent être communiquées à une tierce partie sans un accord préalable écrit. Information included in this document stay CHELTON Telecom & Microwave trading as COBHAM MICROWAVE exclusive property or to his representatives and can’t communicate without prior writing agreement.
Typical Electrical performances: DH80102-94N
0.1
1
10
0 20 40 60 80 100
Ct
[pF]
Vr [V]
Ct versus Vr 1 MHz
0.1
1
10
100
1 10 100
Rs
[Oh
ms]
If [mA]
Rs versus If 120 MHz
Equivalent Model: Forward Bias
Reverse Bias