1
Diamond-Graphite-Diamond Heterostructures Produced by Implantation and HPHT Annealing
for Lift-off Transfer and New Devices
V.P. Popov, V.A. Antonov, S.N. Podlesny, M.A. Ilnitskii, A.K.Gutakovskii,
I.N. Kupriyanov, Yu.N. Pal’yanov
Tomsk 2017
Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia
Sobolev Institute of Geology and Mineralogy, Novosibirsk, Russia
Ec, dia = 107 V∙cm-1
A. Lohrmann,1 S. Pezzagna,1 I. Dobrinets et al. Appl.Phys.Lett. 99, 251106 (2011)
Maximal breakdown voltage and mobility vs. doping
2
Band alignment and resistivity of diamond and graphite
J. Robertson, phys. stat. sol. (a) 205, No. 9 (2008)
gra-C
[1] A. Reznik et al., Phys. Rev. B 56 (1997) 7930.
3
4
Normally-Off MISFET & MESFET: 10mA/mm
Normally-Off MOSFET: low current at VGS < 3 V !
Motivation
T.Matsumoto et al. Sci. Rep. 6 (2016) 31585
Hirama K.et al. JJAP 51 (2012) 090112
Normally-On MESFET: Ion= 1300mA/mm
H-transfer doped -doped
Partial C-O channel MESFET
Y Kitabayashi et al. IEEE EDL, 38 (2017) 363
10A/mm at 3.0 V
Inversion channel MISFET
5 5±1 nm
Status of diamond relative to DiVincenzo criteria for Quantum Information
Processing (QIP):
D. DiVincenzo “Quantum bits: Better than excellent” Nature Mat. 9, 468–469 (2010) .
TD = 1860 K
63
7 n
m
Diamond as a coolest material for Quantum Information Processing
Simple read by CCD matrix…
5
…but it is still not implemented !
P. Hemmer, J. Wrachtrup, F. Jelezko et al. “Diamonds for scalable quantum information systems” SPIE Nanotech. 2007
Joerg Wrachtrup “Defect center room-temperature quantum processors”, Proc. Natl. Acad. Sci. USA 107, 9479 (2010).
,
Write line
1. Motivation for Diamond Electronics
2. Diamond-Graphite-Diamond by II & Lift-off Process
3. Diamond Junction & Field Effect Transistors (J- & FET’s)
4. Sensing by Membranes & NV Defects in Nanostructures
5. Conclusion
Outlook
6
{111} Ib type crystal (left) and {100} (right) with the area up to 40 mm2 was grown using (111) seed orientation for 3-4 carat size
200-400 m plates of {111} plates with the area up to 25 mm2 were produced by laser pointing with subsequent cleavage along the plane of the spikes, grinding & polishing or CVD overgrowth. .
Doped by B or N (1.0-100 ppm) and undoped (
Is injection implantation at. V >50 kV reasonable for multiple cut? 2:1 Relation in the flux between protons and molecular ions is needed. ESR source allows making this!
Proton and Molecular Ion Range (SRIM) & Peak Position (SIMS) How cut diamond on the slices by ion injector?
V.P. Popov et al. NIM B 406 (2017) 634–637 8
Defect profiles & graphitization after H+II + HPHT
Nitrogen 130 keV Hydrogen mol. 60 keV
322 /10 cmVacNcrit
314 /10*5 cmNDcrit
Graphitization :
32
16 /10*5 cmHDcrit
Swelling: TNgr>TNam>TNcrit is due to 10-40% lower density in innner layer.
Rpexp=130-1500 nm
40
nm
gra
ph
ite
140 nm
graphite layer
9
The pressure p0 in blister (radius R, thickness of cup layer h) as a function of the maximum deflection δ is [*]:
[ 1 ] p0 is outer pressure. Ē = E/(1-2) is biaxial elastic modulus with plane-strain modulus.
E = 175±5 GPa Young's modulus to [111] direction. Poisson ratio = 0.1 [**]:
10 The estimation of internal pressure using diamond mechanical properties
,
* C. Coupeau et al. Appl. Phys. Lett. 103 (2013) 031908 ** V.Blank, et al. Diam. and Relat. Mater. 8 (1999) 1531.
For HPHT with h = 0.25 m, R = 0.5 m, δ = 0.006 m: p = 7.0 GPa
For VPHT with h = 0.25 m, R = 0. 5 m, δ = 0.03 m: p = 7.0 GPa,
HPHT 5 GPa
VPHT H2
+ fluence Ф = 8x1016 см-2
Young's modulus to [0001] graphite is equal to E = 32.5 GPa and = 0.3 : p = 1.6 GPa,
10
TEM/HREM planar view: diamond & graphite layers after H2+II & HPHT
Glassy-C layer with thickness 100÷120 nm with vertical graphite nanolamellas inside with
interplanar spacing d = 0.35 nm
Dark field TEM of upper d-C layer (30÷50nm) with 12 diffraction spots due to nd-C twinning by 30o rotation along direction leading to combination of cubic (d-C) and hexagonal (2H) diamond or grains
D
D
D
P.Nemeth et al. srep18381 11
Very rare defect region Typical structure of glassy carbon layer
C A Graphite
3.3 Å
Growth
С A
(121)
2.06 Å
(111)
Carbon
Graphane carbon
Hydrogen
С A С A
Diamond
Diamond (111)
GL-C:H \ \ I / I \ = / Diamond
After HPHT
After VPHT
Diamond (111)
GL-C:H I==I || |=====/ I
Diamond (112)+ ? ? ?
B A
Planar view
C
A
B
Bernal graphite on
(121) microtwin
*W. R. L. Lambrecht et al., Nature 364, (1993) 607-610
2:3 diamond growth model* – 3:2 graphite growth model for vertical planes
First model for growth of graphite on (110) planes of diamond
(11
0)
12
SAED, XTEM and FFT, HRTEM of HPHT annealed Ib (111) diamond
50 keV hydrogen molecule fluence Ф = 4x1016 см-2 after HPHT annealing at 1200oC 4 GPa 4 h
17.3o
Graphite (nm): 0.335(111), 0.213(100),
Tetragonal distortion: d111 = 0.354 nm, d100 = 0.204 nm with 72.7o between and
directions suggests mixed Bernal/rhombohedral graphene sheet package 13
0.206 nm
0.206 nm
0.206 nm
0.204 nm
0.354 nm
From diamond
1/1 graphite growth model corresponds to the experimental angle ~17o and shows increased distances between carbon atoms and graphene planes
A
В
С
A
В
С
A
C A
Graphite
3.5 – 3.8 Å
Growth
(111)
2.06 Å
(111)
Carbon
Interphase carbon
Hydrogen
Diamond
B A
Planer view
C
A
B
(0001) rhombohedral graphite
on H-(111)-planes
73.0o
2.19 Å
2.16 Å
70.5o
*V.P. Popov et al. AIP Conf. Proceed., 2012
Diamond (111)
GL-C:H \ \ I / I \ = /
Diamond
After HPHT
After VPHT
Diamond (111)
GL-C:H I==I || =====/ I
Diamond (112)+ ? ? ? ? ?
Second model for growth of graphite on (111) planes of diamond
14
Hydrogen molecules (H2+),
50 keV, (1÷13)x1017 cm-2 + Nitrogen (N+), 120 keV, 3.5x1016 cm-2 (through Al-mask for contacts) HPHT treat.: P=4÷8 GPa T=1200÷1600oC, 4 h (BARS) VPHT: P=10-3 Pa
*J.K.Lee Phys. Rev. B 83, 165423. 2011
Theoretic bigraphane interpla- nar distance* ~0.45÷0.50 nm
HPHT VPHT
HREM micrograph of buried layer and Raman spectra after H2+II & HPHT
V.P. Popov, V.I. Popok, Yu.N. Palyanov, I.N. Kupriyanov. . EMRS-2011, Nice, France
0.45 nm
Nanographane? graphite and glassy-C layers or twisted AA’?
0.22 nm
15
J-K Lee, Scie. Rep. DOI: 10.1038/srep39624
1019cm-3
1018cm-3
a)
c)
550 600 650 700 750
0,0
5,0x103
1,0x104
1,5x104
2,0x104
2,5x104
3,0x104
Inte
nsity,
arb
. units
Ram
an
638 n
m (
NV
- )
575 n
m (
NV
0)
Wavelength, nm
16 Graphite H-C Diamond Graphite H-C Diamond
C
Applications for DGD-heterostructures
Amplifying of NV-centers PL in d-C Ib by E-field
V.P. Popov et al. Int. J. Nanotechnol., 12, 226 , 2015. 16 -40 -20 0 20 40
10-1
100
101
102
103
Sample B10
N+, 50 keV, 4*10
17 cm
-2
CN - d-C(B)
Vd-C(B)
- COM
VCN
- Changeable
Point 1
CN - CN
CN - d-C(B)
Vd-C(B)
- COM
VCN
- Changeable
Point 2
I DS, m
kA
UDS
, V
CN-heterojunctions
CN
Test structures for conductivity
Hydrogen implantation for buried conductor
standard lithography with Al masks
Nitrogen implantation for contact pads
Al etching + thermal annealing
0 200 400 600 800 1000 1200
102
103
104
105
106
107
DC-1, ILN E=120 keV,
VPHT, 1h
D (N), 1016
cm-2:
- 1
- 4
- 7
Rs, O
hm
/sq.
T, oC
Hydrogen molecules (H2+),
50 keV, (1÷13)x1016 cm-2
+ Nitrogen (N+), 130 keV, 3.5x1016 cm-2 (through Al-mask for contacts)
VPHT treat.: P=10-3 Pa HPHT treat.: P=4÷8 GPa T=1200÷1600oC, 4 h FIB litography +
17
Quantum correction* due to e-e interaction in diffusion channel:
σ (T) = σ(0) + σe-e(T) = σ (0)+β∙T1/3
Variable range hopping mechanism of conductivity S(T)=S0*T-1/2*exp [-(T0/T)1/4] T0=16/a3*k*N(EF) a – radius of hopping site sp2 bond – a=1.2 nm
When conductivity becomes metallic? Reznik et al. This happens when density of states N(EF) reaches the value N0(EF) determined by the relation N0(EF) *a
3=1, i.e. N0(EF) =1/a
3=6x1020 states/(eV*cm3) for a=1.2 nm
If there is σ (0)0 then the conductivity is quasimetallic after 1200oC or above MIT. 18
Semimetallic mechanism of conductivity
240 & 32 nm membrane from diamond-graphite-diamond (DGD) heterostructures produced by N+ & H2
+ II .
Absorption bands at UV 100 and 300 nm indicate a presence of graphite inclusions after
1600oC, 19 *V.P. Popov et al. AIP Conf. Proceed., 2012
0 200 400 600 800 1000 1200 1400
0,0
0,2
0,4
0,6
0,8
1,0
wavelenth, nm
Inte
nsity,
arb
. un.
Film T
Bulk R
Bulk T
0 200 400 600 800 10000
2
4
6
8
10
wavelenth, nm
Inte
nsity,
arb
. units
Bulk Reflection
Bulk Transmission
800 1000 1200 1400 1600 1800 2000
100
1000
10000
1596
cm-1 (G
-ban
d)
1333
cm-1 (D
iam
ond)
1327
cm-1 (M
embr
ane)
FWHM = 12 cm-1
FWHM = 3 cm-1
Diamond membrane
Laser 325 nm
Raman shift, cm-1
Inte
nsity,
arb
. un.
Initial diamond
270 nm membrane
1100 1200 1300 1400 1500 1600 1700 1800
200
400
600
800
1000
12001400
Laser 514.5 nm
FWHM = 4.2 cm-1
FWHM = 5.2 cm-1
1329
cm-1 (M
embr
ane)
1333
cm-1 (D
iam
ond)
Raman shift, cm-1
1594
cm-1 (G
*-ba
nd)
1355
cm-1 (D
-ban
d)
Inte
nsity,
arb
. u
nits
bulk as H2
+ implanted
initial
270 nm membrane
240 nm membranes from diamond-graphite-diamond heterostructures produced by (N+ + H2
+)II + HPHT + Anodic Etching
No other PL lines at laser excitation at ex 514.5 nm after 1600oC, only small G*-line and four times larger FWHM for UV RS due to residual stresses*
20
600 800 1000 1200 1400 1600
0,4
0,6
0,8
1
1,2
Laser 785 nm
Raman shift, cm-1
Inte
nsity
, arb
. un.
495
After 1200oC 5 GPa
0.243мм
240nm
1500 1596
14241280
935703
1003
Tareeva, et al. Bull. Lebedev Phys. Inst. 44 (2017) 210 V.P. Popov et al. Int. J. Nanotechnol., 12, 226 , 2015.
Hydrogen molecule fluence Ф =8x1016 см-2 after HPHT annealing at 1200oC 1h
Bonding of diamond 30 nm film to PMMA or glass substrate
21
. UV10
. UV11
. UV12
.UV2
. UV4
. UV3
. UV6
UV7 .
UV8,9 .
.
UV
5
HII: H2+ 50 keV, 8x1016 cm-2,
HPHT, 1200oC, 5GPa 2h, AO of 110 nm Gl-C and transfer of 290 nm
diamond on PMMA substrate (delamination by residual stress in diamond membrane)
AO after Bonding to PMMA
Diamond Membrane
300 nm
on PMMA
4 mm
8 m
m
21
1. Motivation for Diamond Electronics
2. Diamond-Graphite-Diamond by II & Lift-off Process
3. Diamond Junction & Field Effect Transistors J-, MISFET
4. Sensing by Membranes & NV Defects in Nanostructures
5. Conclusion
Outlook
22
-10 -5 0 5 1010
-12
10-11
10-10
10-9
10-8
10-7
10-6
10-5
- 1 n1/p
- 2
- 3
- 4
- 5 n2/p
n/p (in/out of pad)
I, A
V, Volt
Diamond vs. Silicon p-n Junctions
I-V characteristics of equally doped p-n junctions at RT simulated by TCAD Synopsys
silicon
diamond
-10 -5 0 5 10
V, Volt
I, A
100
10-10
10-20
10-14
10-4
Measured I-V characteristics of p-n
mesa junctions at RT after 1200oC 4 GPa
23
Electron Density at -1 nm
Design of Diamond Hetero or Schottki Barrier n-MISFET
Diamond body. The drain and source are made from Al,Pt Schottki or n+-type
(1019cm-2) silicon carbide Hetero Barrier and located at the edges of the
diamond body (in one plane):
•Full length of the transistor is 200 nm. •The length of the gate is 100 nm. •The length of the channel is 104 нм. •The length of drain & source is 20 nm. •The thickness of diamond layer is 20 nm. •The thickness of the gate oxide is 2 нм. •Top aluminum (Al) gate. •The back oxide thickness is 20 nm on Al plate.
24
Electron Density in Diamond FETs with Schottki Barriers
Vg=-2 V Vg= 0 V
-10 -8 -6 -4 -2 0 2 4 6 8 10
1E-18
1E-17
1E-16
1E-15
1E-14
1E-13
1E-12
1E-11
1E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
nMOS
Usub=Us=0
Ud=+0.1V
SD WorkFunction[eV]:
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
pMOS
Usub=Us=0
Ud=-0.1V
SD WorkFunction[eV]:
7.4
7.2
7.0
6.8
6.6
6.4
6.2
6.0
5.8
pMOS nMOSeBarrierTunneling (PeltierHeat)
hBarrierTunneling (PeltierHeat)
Hydrodynamic Model (eTemperature)
Hydrodynamic Model (hTemperature)
Lattice Temperature: 500K
I ds, A
/um
Ugate
, V
I-V characteristics of SB MISFET at RT simulated by TCAD Synopsys
No large difference in SB MISFET for four different parameter sets by TCAD Synopsys
Ion = 10mA/mm: E-1.8 eV for SB p-MISFET at Vg>+2 V 25
-0.08 -0.06 -0.04 -0.02 0.00 0.02 0.04 0.06 0.08
10-4
10-3
10-2
10-1
100
101
102
103
eBarrierTunneling
n-SD 1e19cm-3
T=500K
Vg=+6V
Usub=Us=0
Ud=0.2V
Ud=0.1V
SiC SiCC(Diamond)
ab
s(E
lectr
on
Cu
rre
nt D
en
sity),
A/c
m2
X, um
-0.08 -0.06 -0.04 -0.02 0.00 0.02 0.04 0.06 0.08
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
ConductionBandEnergy
eQuasiFermiEnergy
hQuasiFermiEnergy
ValenceBandEnergy
eBarrierTunneling
n-SD 1e19cm-3
T=500K
Vg=+6V
Usub=Us=0
Ud=0.1V
Ud=0.2V
SiC SiCC(Diamond)
En
erg
y, e
V
X, um
Bottom of conduction band
E-Bands & Current Density in Diamond Hetero n-MISFET
and Electron Density at +1 nm under the surface
26
0 1 2 3 4 5 6 7 8 9
1E-25
1E-24
1E-23
1E-22
1E-21
1E-20
1E-19
1E-18
1E-17
1E-16
1E-15
1E-14
1E-13
1E-12
1E-11
1E-10
1E-9
1E-8
1E-7
1E-6
1E-5
eBarrierTunneling (Source & Drain)
Max Length for Tunneling: 17nm
Electron Effective Mass for Tunneling:
mt=0.1me
mt=0.2me
mt=0.5me
mt=1.0me
noTunneling
I ds, A
/um
Ugate
, V
nMOS
SiC-C-SiC
Gate Length 100nm
Channel Length 104nm
n-SD Length 20nm
Base Thickness 20nm
Top Oxide Thickness 2nm
BOX Thickness 20nm
Top/Sub Gate: Al
Usub=Us=0, Ud=0.1V
n-SD 1e19cm-3
Temperature 500K
Matsumoto, T. et al. Sci. Rep. 6 (2016) 31585
Ids = 1-100 mA/mm at 500oC in dependence on the mt under the barrier
Heterobarrier n-MISFET vs. inversion channel p-MOSFET
27
Vg=8V: 20 A/mm
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
1E-25
1E-24
1E-23
1E-22
1E-21
1E-20
1E-19
1E-18
1E-17
1E-16
1E-15
1E-14
1E-13
1E-12
1E-11
1E-10
1E-9
1E-8
1E-7
n-SD 1e19cm-3
eBarrierTunneling (PeltierHeat)
Hydrodynamic Model (eTemperature)
Lattice Temperature: 500K
Usub=Us=0
Ud:
1.0V
0.5V
0.3V
0.2V
0.1V
I ds, A
/um
Ugate
, V
28
Vg=6V: 5 A/mm
Heterobarrier n-MISFET vs. inversion channel p-MOSFET
Ids = 100 mA/mm at 500oC But we need to account correctly the
dependence = (E) Matsumoto, T. et al. Sci. Rep. 6 (2016) 31585
Heterobarrier p-JFET with n-type g-C3N4 mesh
-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
1E-17
1E-16
1E-15
1E-14
1E-13
1E-12
1E-11
1E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
I dra
in, I s
ourc
e, I g
ate, A
/um
Ugate
, V
Usource
=0, Udrain
=-0.1V
Currents:
Isource
Idrain
Igate
SiC n-Mesh Doping:
P-1e17-1e19
C p-Base Doping:
B1e19
B5e18
B2e18
B1e18
B5e17
B2e17
B1e17
Vg=-3V: 50A/mm vs. 50mA/mm at 500K
29 *Iwasaki T. et al. JEDS 5 (2016) 2624301
CN-heterojunctions with Ioff/Ion ~ 10-3
1. Motivation for Diamond Electronics
2. Diamond-Graphite-Diamond by II & Lift-off Process
3. Diamond Junction & Field Effect Transistors (J- & FET’s)
4. Sensing by Membranes & NV Defects in Nanostructures
5. Conclusion
Outlook
30
Diamond & Multigraphene Membranes as Silicon FET gate
I-V characteristics of membrane gated FET with three gate lengths simulated by TCAD Synopsys
31 V Popov. et al. Proceed. of ICMNE-2016 Int. Conf., Moscow, 2 (2015) 149
V
V - diamond
Ep-n = 103 V∙cm-1
δ1,2: ~ 600, 400 GHz
32
NV- centers in embedded vertical p-n junctions Stark Effect at NV-centers in forward biased p-i-n diode
E dia = 106 V∙cm-1
late
ral p-
n ju
nction
Exciton luminescence (VFB=35 V)
ENV0/- = EC-2.58 eV
Inte
nsi
ty, a
rb.u
n
Wavelength shift , arb. un
Ep-n = 106 V∙cm-1
Splitting in Stark shift for 2 NV- groups
The splitting allows to control of the spins in differently oriented NV- groups along axes
V Popov. et al. Proceed. of ISI-2015 Int. Conf., Moscow, 2 (2015) 13-19
***T.Karin, et al. Appl. Phys. Lett. 105, 053106 (2014).
*T. Yamamoto et al. Phys. Rev. B 90, 081117(R) (2014).
**N.Bar-Gill et al. Nat. Commun. 4:1743 (2013).
If transverse spin-relaxation time T2
* is:
T2* = 1/(δ) = 52 ns
Spin-relaxation time T due to dipolar coupling is:
TNV 1/[(gsB)2nNV ] = 700 ns
TNV 1/[(gsB)2nNs ] = 200 ns
T is limited by high nNs
Highest TNV ~500 ms for nNs =1015cm-3**:
TNV 1/[(gsB)2nNV ] = 1 s
TNV 1/[(gsB)2nNs ] = 130 ms
No hyperfine splitting* for NII:
(3.1 MHz)/(9.5 MHz) -> δ = 6.3 MHz
Δ =151MHz Δ =62MHz Δ =60MHz Δ = 152MHz
D =2870 MHz
45% of the NV’s are to the surface***
33
ODMR of NV’s in 300 nm N+ implanted layer at high temperature
H = D [SZ2 – S(S+1)/3] + [B + b(t)]S + E(SX
2 – SY2),
V Popov. et al. Proceed. of ISI-2015 Int. Conf., Moscow, 2 (2015) 13-19.
Magnetic dipole coupled spin arrays
T2 limit
323md ~
1~ Tdd
E
On-Crystal Quantum Network from M. Lukin group. P.R.L. 110 (2013) 067601
Error in collectively enhanced quantum gates
= 1 − exp[−(4t/T2* )3]
For = 10 -4 T2*= 11 ms
34
35
The probability to find analogical or other charged centers with content [CNs] = 2.5x1013 cm-3 in neighborhood of 10 nm layer on the distance r and determines as exp(-[CNs]R^2) = 1/2.
Then the distance R is equal to R ≈ 0.47([C])-1/2 = 1x10-6 cm =10 nm
V.P. Popov, et al. . ICW-2010, Kyoto 2010
PL Peaks of NV ensembles in Ar27 Cluster Ion Implanted Diamond
630 632 634 636 638 640 642 644
100
150
200
250
300
350
NV-
637.2 nm
Inte
nsity,
arb
. un.
Wavelength, nm
No5
Laser 532.1 nm
-192.1 oC
tcount
= 10 sec
Point 1
Point 1_double
Point 2
574 576 578 580 582 584 586 588
100
150
200
250
300
350
NV0
575.0 nm
Inte
nsity,
arb
. u
n.
Wavelength, nm
No5
Laser 532.1 nm
-192.1 oC
tcount
= 10 sec
Point 1
Point 1_double
Point 2
Visible PL at 575 and 637 nm of NV0 & NV- with content [CNV] = 5x1013 cm-3 at LNT
.
FWHM of NV- is δ=170 GHz or 230+10 pm instead of δ=30 GHz for single NV- .
NV’s mainly in clusters!
FWHM for 0.2-20ppm NV’s is the same for bulk, HNI & HII diamond
36
The probability to find analogical or other charged centers with content [C] = 2.5x1013 cm-2 in neighborhood on the distance r and determines as exp(-[C]R^2) = 1/2.
Then the distance R is equal to R ≈ 0.47([C])-1/2 = 1x10-6 cm =10 nm (anneal. 850oC)
V.P. Popov, et al. . ICW-2010, Kyoto 2010
425m
425m
PL CLM of NV ensembles in Ar27 Cluster Ion Implanted Diamond
NV- ensemble spots with area content [CNV]s = 3x106 cm-2 or 1/300 of [NCl] !
.
Average distance R is equal to R ≈ 0.47([CNV])-1/2 = 1.6 x10-4 cm = 1.6 m at RT
010
20
30
40
50
2,0x103
4,0x103
6,0x103
8,0x103
1,0x104
0
10
20
30
40
50
Y/1
0, nmX/10, nm
NNV’s: 1 2 3 4 5 … 10
Number of NV centers в in spice - 25 50 100 150 200 …
37
Solid State Lenses with One NV Ensemble made by Ga+ FIB
V.P. Popov et al. RFTT-2015 Conf. Proceed., 2015, 147
5x increase in NV- PL intensity, but we need a regular matrix !
532 nm green laser beam with 300 nm in diameter
570 580 590 600 610 620 630 640 650
104
2x104
3x104
Inte
nsity,
arb
. u
n.
Wavelength, nm
solid lens
planar NV-
637 nm
PL increasing for solid state lenses due to a suppression of inner reflection
But what is the influence of FIB induced defects ?
[CNV]s = 3x106 cm-2 than average content in lens is = 50 pcs.
ODMR of NV’s (~50 pcs) in H+II & annealed pillars of 300 nm in the height
2780 2800 2820 2840 2860 2880 2900 2920 2940 2960
105000
110000
115000
120000
125000
ph
oto
n c
ou
ntin
g
frequency of the microwave Mhz
0G
3,26G
4,8G
6,44G
8,7G
10,81G
12,86G
2780 2800 2820 2840 2860 2880 2900 2920 2940 2960
96000
98000
100000
102000
104000
106000
108000
110000
112000
114000
ph
oto
n c
ou
ntin
g
frequency of the microwave Mhz
0G
3,26G
4,8G
6,44G
8,76G
12,86G
NG2 -5dbm s 2,5mm
For H+II only strain splitting is observed:
(3.1 MHz)/(6.3 MHz) -> δ = 3.2 MHz
If transverse spin relaxation time T2* is:
T2* = 1/(δ) = 100 ns
Spin-relaxation time T due to dipolar coupling:
TNV 1/[(gsB)2nNV ] = 3.5 s
TNV 1/[(gsB)2nNs ] = 140 ns
T is limited by high nNs !
E= 6.3 MHz corresponds to the strain = +1.5%
38
~50 pcs
Stimulated spin echo for T2 measurements by MW pulse ODMR at constant laser excitation beam
2830 2840 2850 2860 2870 2880 2890 2900 2910
2645000
2650000
2655000
2660000
2665000
2670000
2675000
2680000
ph
oto
n c
ou
ntin
g
frequency of the microwave Mhz
0 pulse
3 pulse
4 pulse
Ry1
MW spin echo
sequence 1-2 us
30% decrease in ODMR dip after 5 s means
T2 value ~ 12 µs 39
MW
pu
lse
s C
ou
nts
on
3
pu
lse
C
ou
nts
on
4
pu
lse
Constant Laser Power
..............................
/2
1. Hydrogen implantation with fluences Ф > 1017 cm-2 and HPHT
annealing provide the buried conductive layer of mixed graphite
forms with the resistivity < 10-3 Ohm·cm inside the diamond
2. Lift-off technique allows forming free and transferred membranes
of diamonds as thin as 30 nm that are prospective for thin film
vertical JFETs with a saturation current Ion= 50 mA/mm
3. The results for Schottki Barrier MISFET simulation using SB
source-drain contacts show Ion as high as 100 mA/mm for
optimized SB metals, or ~10 times higher than in normally-off
MESFETs with H-transfer doping.
4. Hetero Barrier n-MISFET simulation with CN S-D regions shows
the Ion as high as 100 mA/mm for optimized S-D doping or about
~100 times higher than in inversion channel n-MOSFETs but Ion depends strongly on effective mass of carriers under the barrier
Conclusion
40
1. Suspended diamond membranes as a gate of silicon FETs service as a highly sensitive sensors of displacements in the nanoscale range
2. NV-centers at the concentration 0.2-20 ppm in 30-300 nm layers and membranes have practically the same spectral characteristics as in the bulk diamond crystals
3. Charge state and ZPL position of NV-centers are effectively controlled by inner electric fields in p-n junction
4. NV center relaxation and spin coherence times are determined mainly by the interaction with nearest nitrogen donors and should be increased for QIP
5. NV matrices are the promising candidate for magnetic, electric, and spin nanoscopy and NMR spectroscopy with nanoscale resolution
Conclusion
41
to the colleagues from the Institutes of Semiconductor Physics, Geology and Mineralogy of SB RAS and Melbourne University :
Dr. L.N.Safronov for p-n & JFET fabrication,
Dr. A.A.Kalinin for HPHT treatment,
Dr. S. Rubanov for SEM analysis.
Our thanks
Thank Your for Attention!
42