Electronic Supplementary Information
Fully Solution-Processed Transparent Electrode Based on Silver Nanowire
Composites for Perovskite Solar Cells
Areum Kim,a Hongseuk Lee,a Hyeok-Chan Kwon,a Hyun Suk Jung,b Nam-Gyu Park,c Sunho Jeongd and Jooho Moona,*
a Department of Materials Science and Engineering, Yonsei UniversitySeoul 120-749, Republic of Korea
b School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
c School of Chemical Engineering and Department of Energy Science,Sungkyunkwan University, Suwon 440–746, Republic of Korea
d Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT),Daejeon 305-600, Republic of Korea
*Corresponding author, e-mail: [email protected]
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Electronic Supplementary Material (ESI) for Nanoscale.This journal is © The Royal Society of Chemistry 2015
Fig. S1 (a) X-ray diffraction spectra of CH3NH3PbI3 on a Si wafer. The peak position of AgI (002)
overlapped with the CH3NH3PbI3 peak.
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Fig. S2 Scanning electron microscopy (SEM) image of the cross-section of ITO film deposited by
the combustion sol-gel method after annealing at 500°C.
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Fig. S3 (a) X-ray diffraction patterns of ITO films fabricated using the combustion sol-gel method
as a function of annealing temperature. (b) Thermal analysis of ITO combustion sol-gel
precursor solution. Abrupt weight loss and a sharp exothermic peak were observed at 190°C.
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Table S1 Conductivity of ITO films fabricated via the combustion sol-gel method as a function of
annealing temperature before and after post annealing in H2/Ar (5/95).
Annealing Temp. Process Conductivity (S cm-1)
After annealing 62.5500°C
After H2/Ar post annealing 444.84
After annealing 2.43350°C
After H2/Ar post annealing 338.71
After annealing 0.003250°C
After H2/Ar post annealing 48.08
After annealing 0.0007200°C
After H2/Ar post annealing 23.08
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Fig. S4 (a) SEM image of the AgNW film. AgNW films were prepared with a spin coating speed
of 650, 800, or 1000 rpm. (b) Converted images showing the projected two-dimensional
morphology of the AgNW films. (c) Corresponding images showing the area fraction of the open
area ratio (OAR) to the covered area ratio (CAR).
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Fig. S5 The morphologies of ITO/AgNW films annealed at 250°C for 30 min depending on the
concentration of ITO sol-gel solution.
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Table S2. The sheet resistances of ITO/AgNW/ITO composites with different thickness of ITO top coating layers.
Concentration of ITO sol-gel
used to overcoatSchematic Average sheet resistance
0.4 M 46.3 ohm/sq
0.2 M 9.96 ohm/sq
0.02 M 8.98 ohm/sq
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Fig. S6 XRD spectra of PbI2/ZnO/ITO/AgNW/ITO/Si. Aged samples indicate that the
measurement was performed after 24 h-aging (ITO = ■, PbI2 = ▼, Ag =▲, Si substrate =＊).
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Fig. S7 (a) FE-SEM images of top surfaces and (b) cross-sectional images in COMPO mode of
CH3NH3PbI3/AgNW, CH3NH3PbI3/ZnO/ITO/AgNW/ITO, and CH3NH3PbI3 + m-Al2O3/ZnO/ITO/
AgNW/ITO.
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Fig. S8 Sequential J-V curves of optimal devices using the ZnO/ITO/AgNW/ITO substrate. (a) 1st
negative scan and 2nd positive scan. (b) 3rd negative scan and 4th positive scan. (c) six repeated
negative scans.
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Fig. S9 External quantum efficiency (EQE) and integrated current density of the device
containing the composite electrode.
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Fig. S10 Current density-voltage (J-V) curve of the device: Au/Spiro-OMeTAD/CH3NH3PbI3/m-
Al2O3/ZnO(sol-gel)/ITO(sol-gel) under standard 1 sun AM 1.5 G simulated solar irradiation. The
inset is a table for performance parameters.
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Fig. S11 J-V curves of devices with different bottom ITO thicknesses. As the thickness of the
bottom ITO film increased, so did the short circuit current density (JSC) of the device.
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