MICRO
FOO
T CS
P PA
CKAG
ES
THERMALLY ENHANCED POWERPAK ® FAMILY COM
PACT DUAL DEVICES REDUCE COMPONENT COUNT
P-CHANNEL MOSFETS-12 V TO -40 V TrenchFET® GEN III AND IV
MS7530-1712www.vishay.com
IN A NUTSHELL
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.
Enable LONGER battery life
Up to 31 A continuous drain current rating in 2 mm x 2 mm package
Industry’s lowest RDS(ON) in an array of advanced packages• Minimize power loss and voltage drop
Minimizes Footprint RequirementPackage size down to 0.8 mm x 0.6 mm
Breakdown voltages: -12 V to -40 V
Battery application driven features• Guaranteed 1.5 V rated RDS(ON) • ESD protection up to 8 kV (HBM)
MICRO FOOT®
0.8 mm x 0.8 mm
PowerPAK® SC-702.05 mm x 2.05 mm x 0.75 mm
SiSA01DN-30 V, 4.9 mΩ
PowerPAK® 1212-810.89 mm²
PowerPAK® 08060.8 mm x 0.6 mm
SO-8 equivalent-30 V, 5 mΩ
SO-831 mm²
INCREASE efficiency of power delivery
PREVENT undesired fault signals
APPLICATIONS
65 % Smaller footprint
BATTERYPOWERED
EQUIPMENT
NOTEBOOKS / TABLETS
GAME CONSOLES WEARABLES
CONSUMER ELECTRONICS
COMPACT and space saving PCB layout OPTIMIZATION
Part # Si8851EDB SiSA01DN Si7155DP
VDS -20 V -30 V -40 V
RDS(ON) < 8 mΩ < 4.9 mΩ < 3.6 mΩ
Footprint (mm) 2.4 x 2 3.3 x 3.3 6 x 5
Part # SiA467EDJ SiA437DJ
VDS -12 V -20 V
RDS(ON) < 13 mΩ < 14.5 mΩ
Continuous ID 31 29.7
COMPACT DUAL DEVICES REDUCE COMPONENT COUNT
Typical load switching application
APPLICATIONS
Full Range Of Leaded and Surface-Mount Packages, Including:
TO-247 D2PAK / DPAKPowerPAK® 8x8 /
8x8LPowerPAK® SO8
to 0806SOT, TSOP, SC
FamiliesMICRO FOOT®
Power MOSFETsTrenchFET® AND E SERIES
IN A NUTSHELL
LOW CONDITION
LOS
S
LOW
SWITCHING LOSS
ROBUST PRODUCTS
VMN-MS7318-1712
www.vishay.com © 2018 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.
MARKETS AND APPLICATIONS
Broad range of power MOSFETS in a wide selection of advanced packages• N- and p-channel families
• Breakdown voltages: -200 V to 800 V
• Wide range of gate drive voltages starting at 1.2 V
• Commercial, automotive, and medical product grades
Breakdown Voltage and Package Selection PowerPAK® 0806
MICRO FOOT®SC-75 / SC-89
PowerPAK SC-75SC-70
PowerPAK SC-70SOT-23TSOP-6
PowerPAK ChipFET®PowerPAK 1212
TSSOP-8SOIC-8
PowerPAK SO-8LPowerPAK SO-8
PowerPAK 8x8DPAK / IPAK
TO-220 / TO-263TO-247
-200 -100
TrenchFET® E Series
0 100 200 300 400 500 600 700 800
P-Channel N-Channel
Application-Specific Technology Platforms• Optimized with lowest Rds(on) for load switch
applications
• Optimized for lowest gate charge and capaci-tances for fast switching
Inductor LoadCircuit
VIN
V-
PowerSource
LoadCircuit
Inductor LoadCircuit
VIN
V-
PowerSource
LoadCircuit
INTEGRATED MOSFET POWER STAGE COM
PACT
H
IGHE
ST O
UTPU
T CU
RREN
T
POWERPAIR® MOSFETSINTEGRATED DUAL-MOSFET POWER STAGE
MS7531-1805www.vishay.com
IN A NUTSHELL
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.
TABL
ET
SMAR
T
PHON
E
Supports Single or Multi-Phase Designs, Reduces PCB Footprint Area for MOSFET Components
PowerPAIR 6x5F for Layout Optimization Simplifies Placement of Input Capacitor
Separation of “Power” and “Signal” Partition
Input Voltage Range: 4.5 V to 24 VInternally Connected Half-Bridge
APPLICATIONS
COMPUTERS GAME CONSOLES
USER INTERFACES
DRONES
COMPACT DUAL DEVICES REDUCE COMPONENT COUNT
PowerPAIR 6x5F
WIDE RANGE of Solutions That Support Popular Output Power and Duty Cycle Requirements
Optimized Gen IV MOSFET Pair Enables High Efficiency
PowerPAIR 6x5
PowerPAIR 3x3
99.0 %
98.5 %
98.0 %
97.5 %
97.0 %
96.5 %
96.0 %
95.5 %
95.0 %1 2
Output Load (A)
E
cien
cy
13.3 VIN / 700 kHz / IHLP5050EZ 2.2 µH / Open Loop Thermal BalanceE ciency vs. Load
3 4 5 6 7 8 9
98.7 % Peak EciencyIn a typical battery charger application
SiZ340DT @ 5.6 VOUT
SiZ340DT @ 8.4 VOUT
SiZ322DTSiZ342DT
SiZ320DTSiZ340DT
SiZ320DTSiZ340DT
SiZ320DTSiZ340DT
SiZ980DTSiZF918DT
SiZ328DTSiZ342DT
SiZ926DTSiZ988DTSiZ998DT
SiZF914DTSiZF916DTSiZF906DT
SiZ926DTSiZ988DTSiZ998DT
0
50 %
30 %
16 %
5 10 15 20 25 30
Dut
y C
ycle
Output Current (A) per Phase
GRAPHIC CARDS
TELECOM EQUIPMENT
CONSUMER ELECTRONICS
(dimension in mm)
INCREASE POWER DENSITY
MS7339-1711© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.www.vishay.com For Technical Questions: [email protected]
Higher efficiency
Space-saving packages
APPLICATIONS
TYPICAL EFFICIENCY IMPROVEMENT EXPECTATIONBenchmarking condition 12.9 VIN, 1.8 VOUT, 800 kHz
Industry’s lowest RDS(on) n-channel MOSFETs in an array of advanced packages
• Less than 0.58 mΩ
• Breakdown voltages: 25 V to 30 V
• Excellent RDS - Qg FOM improves efficiency for switch-mode power supplies
IN A NUTSHELL
POWER MOSFETsLow Voltage TrenchFET®
Com
pact
and
Hig
h C
urre
nt H
andl
ing
Therm
ally Enhanced and Low Prof le
Dual-S
ided Cooling Feature
RDS(on)
Increased power density
Dual-sided cooling feature
91
90
89
88
872 4 6 8 10 12
Load Current (A)
Effic
ienc
y (%
)
14 16
SiSA18ADN + SiSA12ADN Competitor
2.05 mm 2.05 mm
SiA468DJ SiSS02DN
Up to 37.8 A continuous ID
< 1.2 mΩ, 10.89 mm2 footprint
TELECOM EQUIPMENT
COMPUTERS
SERVERS
CONSUMER ELECTRONICS
DRONES
3.3 mm3.3 mm
IG12828438-1911
www.vishay.com © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.
SiR626DP 60 V 1.7 mΩ N-CHANNEL MOSFETIN PowerPAK® S0-8
Prior Gen2.264
3270
SiR626DP1.468
992
0
20
40
60
80
100
120
140
0 0.5 2.0 2.5 3.0
Typi
cal Q
g (n
C) a
t VG
S =
10 V
Typical RDS(on) (mΩ) at VGS = 10 V
OPTIMIZED FOR SYNCHRONOUS RECTIFICATION AND SWITCHING
Optimized balance of RDS(on), Qg, and Coss reduces power losses from MOSFET conduction, gate driving, and diode conduction
SiR626DP offers lower Qg and Coss than competitors at similar RDS(on).
Bubble Size Represents Coss (pF)
1.0 1.5
Drop-in Upgrade & Industry-Leading F
OM
SiR626DP
TARGET CIRCUIT APPLICATIONS
• Synchronous rectification
• Battery management
• DC/DC topologies
• Motor drive control
• Primary side
• OR-ing
• Battery protection
DESIGN RESOURCES
TARGET APPLICATION MARKETS
VIN = 48 V, VOUT = 4.3 V, frequency = 250 kHz, ¼ brick with half-bridge technology
4 % LOWER Qg
SERVERS MOTORIZED ELECTRONICS
POWERSUPPLIES
AI INFRASTRUCTURE
TELECOMALTERNATIVEENERGY
IMPROVED CRITICAL DYNAMIC PARAMETERS
SIR626DP ENABLES 0.7 % HIGHER EFFICIENCY FOR SYNCHRONOUS RECTIFICTION
OPTIMIZED FOR SYNCHRONOUS RECTIFICATION AND SWITCHING
Prior Gen2.264
3270
SiR626DP1.468
992
0
20
40
60
80
100
120
140
0 0.5 2.0 2.5 3.0
Typi
cal Q
g (n
C) a
t VG
S =
10 V
Typical RDS(on) (mΩ) at VGS = 10 V
OPTIMIZED FOR SYNCHRONOUS RECTIFICATION AND SWITCHING
Optimized balance of RDS(on), Qg, and Coss reduces power losses from MOSFET conduction, gate driving, and diode conduction
SiR626DP offers lower Qg and Coss than competitors at similar RDS(on).
Bubble Size Represents Coss (pF)
1.0 1.5
R-C ThermalModels
Models
+ 0.7 % HIGHER
Comparisons are with similar 60 V devices
16 % BETTER Qoss
1.65 mΩ Competitor
1.6 mΩ Competitor
1.3 mΩ Competitor
SiR626DP
1.65 mΩ Competitor
1.6 mΩ Competitor
1.3 mΩ Competitor
SiR626DP
IG14273664-1912www.vishay.com © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.
SiSS22LDN TrenchFET® GEN IV POWER MOSFET VDS = 60 V in PowerPAK® 1212-8S
RDS(on) AT VGS = 4.5 V (TYPICAL)
ENABLES HIGHER EFFICIENCY • Achieves higher efficiency
• Drop-in upgrade and conventional package type
• Efficiency comparison (right) shows SiSS22LDN and competitor test results on 1/8 brick with VIN = 48 V, VOUT = 3.3 V, Fsw = 140 kHz, and using four devices for secondary side synchronous rectification
SiSS22LDN and HIGH PERFORMANCE COMPETITORS: EFFICIENCY vs. LOAD
SiSS22LDN and Other High Perfornance 60 V DevicesEfficiency vs Load
Output Load (A)
1/8 Brick / 48 VIN / 3.3 Vo / 140 KHZ / 4 pcs Primary + 4 pcs Secondary
Effi
cien
cy (%
)
96
95
94
93
923 6 9 12 15 18 21 24 27
Competitor 1 (4.3 mΩ) Competitor 2 (4.2 mΩ) SiSS22LDN
RDS(on)-Qg FOM (mΩ) AT 4.5 V
• The lowest RDS(on) in its class
• Typical RDS(on) at 4.5 V = 4.1 mΩ
• Typical RDS(on) at 10 V = 2.91 mΩ
• Reduces conduction loss and increases power density
• Excellent RDS-Qoss FOM is optimized for synchronous rectification
• RDS-Qg FOM for VGS of 4.5 V is 10 % lower than the next best product
• Very low Qoss cut unplanned power loss during diode conduction
TARGET APPLICATIONS
SERVERS MOTORIZED ELECTRONICS
POWERSUPPLIES
AI INFRASTRUCTURE
TELECOMALTERNATIVEENERGY
Competitor 1 6.2 mΩ
Competitor 2 6.2 mΩ
Competitor 3 4.7 mΩ
Competitor 4 4.4 mΩ
SiSS22LDN 4.1 mΩ0.0 1.0 2.0 3.0 4.0 5.0 6.0
Competitor 1 93
Competitor 2 87
Competitor 3 136
Competitor 4 79
SiSS22LDN 710 35 70 105 140
3.65
m
Ω, 60 V Power MOSFET
Industry-low RDS(on) and R DS(on)-Q
g F
OMSiSS22LDN
THERMALLY ENHA
NCED
AND
DUA
L-SI
DED
COOL
ING
FEATURE
HIGH CURRENT, RUGGED PACKAGE COMPACT AND LOW PROFILE
POWER MOSFETMEDIUM VOLTAGE TrenchFET®
VMN-MS7340-1711www.vishay.com
IN A NUTSHELL
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.
Enable the HIGHEST efficiency
Industry’s lowest RDS-Qoss Figure-of-merit (FOM) in an advanced package array
Double-cooled PowerPAK SO-8
Breakdown voltages: 40 V to 250 V
Excellent dynamic parameters optimize switching characteristics
INCREASE power density
REDUCE component count
APPLICATIONS
RENEWABLE ENERGY
80 % footprint reduction from D2PAK
SiR680DP 2.9 mΩ max. 6 x 5 mm2
SUM60030E 3.2 mΩ max.15 x 10 mm2
95
94
93
92
91
90
89
88
873 6 9 12 15 18 21
Eci
ency
(%)
Competitor (1.6 mΩ)
Output Load (A)
SiR626DP
Typical Eciency Improvement48 Vin, 8.3 Vo, 250 kHz, 1/4 brick with half-bridge topology
TELECOM EQUIPMENT
POWER SUPPLIES
75 % lower package profile
COMPACT and HIGHLY EFFICIENT devices enable layout optimization
THIN PROFILE with 0.56 mm typical height Footprint COMPATIBLE to PowerPAK SO-8
RDS(ON) as low as 0.73 mΩ
250 V
200 V
150 V
0 10 20 30 40 50 60 70 80 90 100 110 120
0 1 2 3 4 5 6 7
100 V
80 V
60 V
40 V
New GenPrior Gen
PowerPAK® SO-8 Max. RDS(ON) (mΩ) BenchmarkingNew Generation versus Prior Generation
MOTOR DRIVE CONTROL
PowerPAK SO-8 D2PAK
@
N- and P-Channel MOSFETs
AUTOMOTIVE TrenchFET®
SQ SERIES POWER MOSFETs
MS7533-17xxwww.vishay.com
IN A NUTSHELL
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.
• Wide range of N- and P-channel MOSFETs - N-ch VDS = 12 V to 300 V - P-ch VDS = -12 V to -200 V
• Available in single, dual, and dual asymmetric configurations
• Highly efficient packages with power density up to 11 W/mm2
- RDS(ON) down to 1 mΩ
• AEC Q-101 Qualified to + 175 °C
• Latest trench technologies optimized for low conduction and low switching losses
• Product testing includes extended temp screening with dynamic PAT, SYL, and SBL to reduce defects
APPLICATIONS
AUTOMOTIVE
COMPACT DUAL DEVICES REDUCE COMPONENT COUNT
SQ Package Portfolio
Compact PowerPAK® packages ~ Optimized for high board-level reliability
PowerPAK® 8x8L 8 mm x 8 mm
PowerPAK® SO-8L 5 mm x 6 mm
PowerPAK® 1212 3.3 mm x 3.3 mm
PowerPAK® SC-70 2 mm x 2mm
KGD Known Good Die 1 m x 1 mm to8 mm x 12 mm
N-C
HANNEL
P-C
HANNEL
300 V
SC-70
100 V
40 V
0 V
-100 V
-200 V
TO-220TO-263
TO-247
D-PAK
SO-8
PACKAGE SIZE
VOLT
AG
E R
AN
GE
TSOP-6SOT-23
PowerPAK®
SC-70 PowerPAK®
8x8LPowerPAK®
SO-8L PowerPAK®
1212
CAR BATTERIES
INFOTAINMENTLIGHTING
BRAKING ELECTRICVEHICLES
POWER TRAIN
AEC-Q101 Qualif ed
MOSFETs FOR INDUSTRIAL APPLICATIONS
IG12319679-1907
APPLICATIONS• Telecom Equipment
• Power Tools
• Power Supplies
• Motor Drive Control
• Renewable Energy
• Battery Management
Breakdown Voltages: -200 V to 250 V Selected Products Industry Low RDS(ON) and the Best RDS-Qoss FOM
30 % Lower RDS(ON) than products from prior generation Improved Qg reduces power loss from switching
LOW VOLTAGE MOSFETs IN TRANSISTOR OUTLINE (TO-) PACKAGES
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.
SUM70101EL -100 V,
< 10.1 mΩ D2PAK
SUG80050E 150 V
< 5.4 mΩ TO-247
SUG90090E 200 V,
< 9.5 mΩ TO-247
SUP90142E 200 V,
Best RDS-Qoss TO-220
MORE EFFICIENT Power Delivery COOLER Temperature During Operation
PREVENTS Overheating Incre
ase Eff ciency and Power Density
EXTENSIVE ARRAY OF PACKAGE OPTIONS AND FEATURES
Selected products are optimized for 5 V gate drive operations with low RDS(ON)
TO-247 TO-220F TO-220 D2PAK D2PAK-7L DPAK
Up to 100 A Up to 56 A Up to 120 A Up to 120 A Up to 200 A Up to 50 A
High Current and 175 °C Rated Packages Low RDS(ON) in Wide Array
of Packages