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Nov.-18-’03
Fuji High Power IGBT Module
Fuji Fuji High Power IGBT ModuleHigh Power IGBT Module
Industrial Application Div.Semiconductors Group
Fuji Electric Device Technology Co., Ltd.
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Nov.-18-’03
Quality is our messageQuality is our messageQuality is our messageQuality is our messageFuji High Power IGBT Modules
1in1 PKG type: M143
1in1 PKG type: M142
2in1 PKG type: M248
6in1 PKG type: EconoPack-Plus
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Nov.-18-’03
1. High voltage and high current line-up
2. Low on-state voltage
3. Fast switching and low loss characteristics
4. Low inductance package design
5. Easy Parallel connection
Features
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Nov.-18-’03
1. High voltage and high current line-up
2. Low on-state voltage VCE(sat)=2.0V, VF=1.65V @1in1, 2in1(1in1 1200V-1200A device, rating current, 125℃℃℃℃, typical value)
1in1 : 1200V,1700V / 1200A,1600A,2400A,3600A
2in1 : 1700V / 600A,800A,1200A
6in1: 1200V,1700V/ (150A),225A,300A,450A
VCE(sat)
0
500
1000
1500
2000
2500
0 1 2 3
VCE(sat) (V)
Ic
(A
)
RT
125℃
VF
0
500
1000
1500
2000
2500
0 0.5 1 1.5 2 2.5
VCE(sat) (V)
Ic
(A
)
RT
125℃
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Nov.-18-’03
3. Fast switching and low loss characteristics
4. Low inductance package designMain terminal inductance(between collector and emitter) : 12nH 1in1 M142 PKG.
Turn-on wave form Turn-off wave formTest conditions : Tj=125℃℃℃℃, Vcc=600V,RG=0.8ohm, VGE=+/-15V,Ls≒≒≒≒65nH
(time:500ns/div, VGE:20V/div, VCE:200V/div, Ic:400A/div) (time:500ns/div, VGE:20V/div, VCE:200V/div, Ic:400A/div)
(1in1 1200V-1200A device) (1in1 1200V-1200A device)
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Nov.-18-’03
1200V 5th Gen.(U-series) Losses comparison
2MBI300S-120
2MBI300UD-120
BSM300GM120DLC
Presumption
2MBI300S-120
2MBI300UD-120
BSM300GM120DLC
Presumption
2MBI300S-120
2MBI300UD-120
BSM300GM120DLC
Presumption
f=1kHz f=5kHz f=15kHz
Tota
l los
ses(
W)
Ed=600V,Iout=135Armscosθ=0.85,λ=1,Tj=125℃
138W100% 111W
80% 108W78%
207W100% 199W
96%181W87%
297W100%
310W104% 274W
92%
0
50
100
150
200
250
300
350
Psat
Psw
PF
Prr
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Nov.-18-’03
(1) Narrower distribution of characteristics(2) Positive temperature coefficient of on-voltage(3) Less temperature dependence of switching loss
Features of FS-IGBT chip technologyFeatures of FS-IGBT chip technology
Easy to connect in parallel
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Nov.-18-’03
Comparison of 1200V IGBT chipsComparison of 1200V IGBT chipsComparison of 1200V IGBT chipsComparison of 1200V IGBT chips
N-IGBTN-IGBTN-IGBTN-IGBT U-IGBTU-IGBTU-IGBTU-IGBT
Type of IGBTType of IGBTType of IGBTType of IGBT Punch Through TypePunch Through TypePunch Through TypePunch Through Type Fie ld-Stop TypeFie ld-Stop TypeFie ld-Stop TypeFie ld-Stop Type
Gate StructureGate StructureGate StructureGate Structure Planner GatePlanner GatePlanner GatePlanner Gate Trench GateTrench GateTrench GateTrench Gate
WaferWaferWaferWafer Epitaxial WaferEpitaxial WaferEpitaxial WaferEpitaxial Wafer Floating Zone(FZ) WaferFloating Zone(FZ) WaferFloating Zone(FZ) WaferFloating Zone(FZ) Wafer
ThicknessThicknessThicknessThickness 350 micrometers350 micrometers350 micrometers350 micrometers 130 micrometers130 micrometers130 micrometers130 micrometers
Lifetime ControlLifetime ControlLifetime ControlLifetime Control Electron IrradiationElectron IrradiationElectron IrradiationElectron Irradiation not needednot needednot needednot needed
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Nov.-18-’03
p
C
n-
G E
p + sub.
C
G E
n+ buffer
n-
n+ n+p
N-series
S-series
NPT-Structure
G E
FS Trench-Structure
n-
C
U-series
Progress of Fuji’s 1200/1700V IGBT chip design structure
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1200V : Jan. ‘95
1200V : Mar. ‘98 1200V : 2002 1700V : 2002
Jul.-30-’03
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Nov.-18-’03
MBT100N-120
0
5
10
15
20
25 n=84
2.00-2.10
2.10-2.20
2.20-2.30
2.30-2.40
2.40-2.50
2.50-2.60
2.60-2.70
2.70-2.80
2.80-2.90
2.90-3.00
3.00-3.10
3.10-3.20
3.20-3.30
Ave. 2.774Vσ= 0.141
MBT150U-120
Comparison of Vce(sat)distribution
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Nov.-18-’03
Comparison of current imbalance between U-series and N-series
Von1<Von2ΔVon=Von2 - Von1Ic(ave.)=(Ic1+Ic2)/2α=(Ic 1/Ic(ave.) - 1)×100
Von1 Von2
Ic1 Ic2
0.0 0.1 0.2 0.3 0.4 0.5 0.60
10
20
30
40
1200V IGBT
Improvement of current imbalance proportion
U-series
N-series
ΔVCE(sat) [V] (at 25C) [= Von2-Von1]
Current imba
lance propor
tion :α [%
] (at 125C)
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Nov.-18-’03
Maximum current in parallel connection IGBTs
∑
+
−
−+=
1001
1001
)1(1(max) α
α
nII CC
1001)(
1 ×
−=
aveC
C
IIα
For example n=4 , α=10%, Ic(max)=600A
ΣIC= 2072A , Ic(ave)=518A
The worst case conditions where the entire current is concentrated into one module.
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Tentative1in1 Package out lineM142
M143
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1in1 Electrical and thermal characteristics Tentative
Electrical propertiesCollector emitter voltage
Collector current TC= 80℃ 1200A 1600A 2400A 3600A 1200A 1600A 2400A 3600A
housing 140* 130 140* 130 140* 190 140*190 140* 130 140* 130 140* 190 140*190
M142 M142 M143 M143 M142 M142 M143 M143
Peak collector current 2400A 3200A 4800A 7200A 2400A 3200A 4800A 7200A
Vcesat VGE= 15V Tj= 25℃ 1.7V typ 1.7V typ 1.7V typ 1.7V typ 2.0V typ 2.0V typ 2.0V typ 2.0V typ
VGE= 15V Tj= 125℃ 2V typ 2V typ 2V typ 2V typ 2.4V typ 2.4V typ 2.4V typ 2.4V typ
VF- diode (chip) Tj= 125℃ 2.2V typ 2.2V typ 2.2V typ 2.2V typ 2.0V typ 2.0V typ 2.0V typ 2.0V typ
Gate threshold voltage Tj= 25℃ 6.2V typ 6.2V typ 6.2V typ 6.2V typ 7.5V typ 7.5V typ 7.5V typ 7.5V typ
Stray inductance module 12nH 12nH 10nH 10nH 12nH 12nH 10nH 10nH
Stray inductance between 3- 3.5nH 3- 3.5nH 2.5- 3nH 2.5- 3nH 3- 3.5nH 3- 3.5nH 2.5- 3nH 2.5- 3nHSense and main emitter
Thermal propertiesTransistor RthJC Max. values 0.022K/W 0.016 0.0125 0.0084 ≒0.022 ≒0.016 ≒0.0125 ≒0.0084
Diode RthJC Max. values 0.04K/W 0.032 0.021 0.014 ≒0.04 ≒0.032 ≒0.021 ≒0.014
Max junction temperature Max. values 150℃ 150℃ 150℃ 150℃ 150℃ 150℃ 150℃ 150℃Operation temperature Max. values 125℃ 125℃ 125℃ 125℃ 125℃ 125℃ 125℃ 125℃
1200V 1700V
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Nov.-18-’03
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Tentative2in1 Package out lineM248
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Nov.-18-’03
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2in1 Electrical and thermal characteristics Tentative
Electrical propertiesCollector emitter voltage Collector current TC= 80℃ 600A 800A 1200APeak collector current 1200A 1600A 2400AVcesat VGE= 15V Tj= 25℃ 2.0V typ 2.0V typ 2.0V typ
VGE= 15V Tj= 125℃ 2.4V typ 2.4V typ 2.4V typVF- diode Tj= 125℃ 2.0V typ 2.0V typ 2.0V typGate threshold voltage Tj= 25℃ 7.5V typ 7.5V typ 7.5V typ Stray inductance module 12nH 12nH 12nH Stray inductance between 3- 3.5nH 3- 3.5nH 3- 3.5nH Sense and main emitter
Thermal propertiesTransistor RthJC / arm Max. values 0.044K/W 0.032K/W 0.025K/W
Diode RthJC / arm Max. values 0.08K/W 0.064K/W 0.042K/W
Max junction temperature Max. values 150℃ 150℃ 150℃Operation temperature Max. values 125℃ 125℃ 125℃
1700V
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Development road map of UDevelopment road map of U--series IGBT modulesseries IGBT modules
Oct.-17-’03
Road map of U-series IGBT modulesRoad map of U-series IGBT modulesRoad map of U-series IGBT modulesRoad map of U-series IGBT modules
2003/ 2004/Jan. Feb. Mar. Apr. May Jun. Jul. Aug. Sep. Oct. Nov. Dec. Jan. Feb. Mar.
600V Small Pack
PIM (EP)
7in1
( 6in1 )
2in1
1200V Small Pack
PIM (EP)
6in1
2in1
1in1(HM)
1700V 6in1
2in1(HM)
1in1(HM)
Econo Plus (225~450A)
2in1(75A~450A)
Econo PIM (25~75A)
1in1(1200A~3600A)
Econo Plus (150~450A)
2in1(600A~1200A)
1in1(1200A~3600A)
Small Pack (8~50A)
Econo PIM (30~100A)
PC-Pack (50~150A)
Econo Plus (300~400A)
2in1(150~600A)
7in1 (75~150A)
Small Pack (10~15A)
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1in1 2in1 Engineering sample shipment schedule
9999 10101010 11111111 12121212 1111 2222 3333 4444 5555 6666 7777 8888
ESESESES (Engineering Sample) (Engineering Sample) (Engineering Sample) (Engineering Sample) ●1200A/1200V PKG.type:M142
●1600A/1200V PKG.type:M142
1 in11 in11 in11 in1 ●2400A/1200V PKG.type:M143
●3600A/1200V PKG.type:M143
●1200A/1700V PKG.type:M142
●1600A/1700V PKG.type:M142
●2400A/1700V PKG.type:M143
●3600A/1700V PKG.type:M143
ESESESES (Engineering Sample) (Engineering Sample) (Engineering Sample) (Engineering Sample) ●1200A/1700V PKG.type:M248
●600A/1700V PKG.type:M248
2in12in12in12in1●800A/1700V PKG.type:M248
SampleSampleSampleSample2003200320032003 2004200420042004