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Is Now Part of
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December 2013
Thermal Characteristics
FQP6N80C / FQPF6N80CN-Channel QFET® MOSFET800 V, 5.5 A, 2.5 Ω
Description
©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com1
FQP6N
80C / FQ
PF6N80C
— N
-Channel Q
FET® M
OSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features• 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V,
ID = 2.75 A
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 8 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter FQP6N80C FQPF6N80C /FQPF6N80CT Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 0.79 2.45 °C/WRθCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/WRθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W
TO-220GDS TO-220F
GDS
G
S
D
* Drain current limited by maximum junction temperature.
Symbol Parameter FQP6N80C FQPF6N80C /FQPF6N80CT Unit
VDSS Drain-Source Voltage 800 VID Drain Current - Continuous (TC = 25°C) 5.5 5.5 * A
- Continuous (TC = 100°C) 3.2 3.2 * AIDM Drain Current - Pulsed (Note 1) 22 22 * AVGSS Gate-Source Voltage ± 30 VEAS Single Pulsed Avalanche Energy (Note 2) 680 mJIAR Avalanche Current (Note 1) 5.5 AEAR Repetitive Avalanche Energy (Note 1) 15.8 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsPD Power Dissipation (TC = 25°C) 158 51 W
- Derate above 25°C 1.27 0.41 W/°CTJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds.
300 °C
Package Marking and Ordering Information
©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com2
FQP6N
80C / FQ
PF6N80C
— N
-Channel Q
FET® M
OSFET
Electrical Characteristics TC = 25°C unless otherwise noted.
Part Number Top Mark Package Reel Size Tape Width QuantityFQP6N80CFQP6N80C TO-220 N/A N/A 50 units
Packing MethodTube
TO-220F Tube N/A N/A 50 unitsFQPF6N80CFQPF6N80CTube N/A N/A 50 unitsFQPF6N80CTFQPF6N80CT TO-220F
Notes:1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 42 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.3. ISD ≤ 5.5 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.4. Essentially independent of operating temperature.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V∆BVDSS / ∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C -- 0.97 -- V/°C
IDSS Zero Gate Voltage Drain CurrentVDS = 800 V, VGS = 0 V -- -- 10 µAVDS = 640 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 VRDS(on) Static Drain-Source
On-ResistanceVGS = 10 V, ID = 2.75 A -- 2.1 2.5 Ω
gFS Forward Transconductance VDS = 50 V, ID = 2.75 A -- 5.4 -- S
Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1010 1310 pFCoss Output Capacitance -- 90 115 pFCrss Reverse Transfer Capacitance -- 8 11 pF
Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 5.5 A,
RG = 25 Ω
(Note 4)
-- 26 60 nstr Turn-On Rise Time -- 65 140 nstd(off) Turn-Off Delay Time -- 47 105 nstf Turn-Off Fall Time -- 44 90 nsQg Total Gate Charge VDS = 640 V, ID = 5.5 A,
VGS = 10 V (Note 4)
-- 21 30 nCQgs Gate-Source Charge -- 6 -- nCQgd Gate-Drain Charge -- 9 -- nC
Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 22 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5 A -- -- 1.4 Vtrr Reverse Recovery Time VGS = 0 V, IS = 5.5 A,
dIF / dt = 100 A/µs -- 615 -- ns
Qrr Reverse Recovery Charge -- 5.4 -- µC
©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com3
FQP6N
80C / FQ
PF6N80C
— N
-Channel Q
FET® M
OSFET
!
0.2 0.4 0.6 0.8 1.0 1.2 1.410-1
100
101
150※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test25I DR
, Rev
erse
Dra
in Cu
rrent
[A]
VSD, Source-Drain voltage [V]
0 5 10 15 20 250
2
4
6
8
10
12
VDS = 400V
VDS = 160V
VDS = 640V
※ Note : ID = 6.0A
V GS, G
ate-
Sour
ce V
oltag
e [V
]
QG, Total Gate Charge [nC]
60 3 9 121
2
3
4
5
6
VGS = 20V
VGS = 10V
※ Note : TJ = 25
RDS
(ON)
[Ω],
Drai
n-So
urce
On-
Resis
tanc
e
ID, Drain Current [A]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vsDrain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
10-1 0 10110-2
10-1
100
101
VGSTop : 15.0 V
10.0 V 8.0 V 7.0 V 6.5 V 6.0 V
Bottom : 5.5 V
※ Notes : 1. 250μ s Pulse Test 2. TC = 25
I D, D
rain
Cur
rent
[A]
10
VDS, Drain-Source Voltage [V]
2 4 8 1010-1
100
101
150oC
25oC -55oC
※ Notes :1. VDS = 50V2. 250μ s Pulse Test
I D, D
rain
Cur
rent
[A]
6
VGS, Gate-Source Voltage [V]
10-1 0 1010
300
600
900
1200
1500Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd
Crss = Cgd
※ Notes ; 1. VGS = 0 V 2. f = 1 MHz
Crss
Coss
Ciss
Capa
citan
ce [p
F]
10
VDS, Drain-Source Voltage [V]
©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com4
FQP6N
80C / FQ
PF6N80C
— N
-Channel Q
FET® M
OSFET
Typical Characteristics (Continued)
100
101
102
103
10-2
10-1
100
101
102
1 ms
100 µs
100 msDC
10 ms
Operation in This Area
is Limited by R DS(on)
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
I D, Drain C
urrent [A]
VDS, Drain-Source Voltage [V]
100 101 102 10310-2
10-1
100
101
102
10 µs
1 ms100 µs
100 msDC
10 ms
Operation in This Area
is Limited by R DS(on)
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
I D, Drain C
urren
t [A]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Areafor FQP6N80C
Figure 10. Maximum Drain Currentvs Case Temperature
Figure 7. Breakdown Voltage Variationvs Temperature
Figure 8. On-Resistance Variationvs Temperature
Figure 9-2. Maximum Safe Operating Areafor FQPF6N80C
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
※ Notes : 1. VGS = 0 V 2. ID = 250 μA
BVDS
S, (
Norm
alize
d)Dr
ain-S
ource
Bre
akdo
wn V
oltag
e
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes : 1. VGS = 10 V 2. ID = 3.0 A
RDS
(ON)
, (No
rmal
ized)
Drai
n-So
urce
On-
Resis
tanc
e
TJ, Junction Temperature [oC]
25 50 75 100 125 1500
1
2
3
4
5
6
I D, D
rain
Cur
rent
[A]
TC, Case Temperature []
©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com5
FQP6N
80C / FQ
PF6N80C
— N
-Channel Q
FET® M
OSFET
Z JC
(t), T
herm
al R
espo
nse
[o C/W
]Z
JC(t)
, The
rmal
Res
pons
e [o C
/W]
1 0 -5 1 0 -4 1 0 0 1 0 1
1 0 -2
1 0 -1
1 0 0
※ N o te s : 1 . Z θ J C( t ) = 2 .4 5 /W M a x . 2 . D u ty F a c to r , D = t1 / t 2
3 . T J M - T C = P D M * Z θ J C( t )
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
1 0 -3 1 0 -2 1 0 -1
t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ]
1 0 -5 1 0 -4 1 0 0 1 0 1
1 0 -2
1 0 -1
1 0 0
※ N o te s : 1 . Z θ J C( t ) = 0 .7 9 /W M a x . 2 . D u ty F a c to r , D = t1 / t 2
3 . T J M - T C = P D M * Z θ J C( t )
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
1 0 -3 1 0 -2 1 0 -1
t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ]
Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP6N80C
Figure 11-2. Transient Thermal Response Curve for FQPF6N80C
t1
PDM
t2
t1
PDM
t2
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDSRL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDSRL
DUT
RG
VGS
VGS
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
EAS = L IAS2----
21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
I D
t p
EAS = L IAS2----
21EAS = L IAS
2----21----21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
I DI D
t p
VGSVGS
IG = const.
www.fairchildsemi.com6
FQP6N
80C / FQ
PF6N80C
— N
-Channel Q
FET® M
OSFET
©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body DiodeForward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse WidthGate Pulse Period
--------------------------
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LLI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body DiodeForward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse WidthGate Pulse Period
--------------------------D =Gate Pulse WidthGate Pulse Period
--------------------------
www.fairchildsemi.com7
FQP6N
80C / FQ
PF6N80C
— N
-Channel Q
FET® M
OSFET
©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com8
FQP6N
80C / FQ
PF6N80C
— N
-Channel Q
FET® M
OSFET
Mechanical Dimensions
©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1
Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com9
FQP6N
80C / FQ
PF6N80C
— N
-Channel Q
FET® M
OSFET
Mechanical Dimensions
Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight LeadPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com10
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PRODUCT STATUS DEFINITIONSDefinition of Terms
AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
Fairchild®
Fairchild Semiconductor®FACT Quiet Series™FACT®
FAST®
FastvCore™FETBench™FPS™
F-PFS™FRFET®
Global Power ResourceSM
GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™Programmable Active Droop™QFET®
QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®
STEALTH™SuperFET®
SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™
Sync-Lock™®*
TinyBoost®TinyBuck®
TinyCalc™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™
UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
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Rev. I66
tm
®
FQP6N
80C / FQ
PF6N80C
— N
-Channel Q
FET® M
OSFET
www.onsemi.com1
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