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LOW VOLTAGE / LOW POWER RAIL-TO-RAIL CMOS
OPERATIONAL AMPLIFIER FOR PORTABLE ECG
A DISSERTATION
SUBMITTED TO THE FACULTY OF THE GRADUATE SCHOOLOF THE UNIVERSITY OF MINNESOTA
BY
BORAM LEE
IN PARTIAL FULFILLMENT OF THE REQUIREMENTS
FOR THE DEGREE OF
DOCTOR OF PHILOSOPHY
Ted Higman
August 2013
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Copyright by BORAM LEE 2013
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Acknowledgements
First of all, I wish to thank God for his guidance and love for me throughout my
life up to this moment and praise the Lord with all my heart. His amazing grace has
always been with me and will guide me for the rest of my life.
I would like to give my very special thanks to Professor Higman, my advisor.
Without his help, I would never have been able to complete my degree successfully. His
help gave me the very last chance and that chance changed my life.
I am immensely blessed with many wonderful people. Most of all, I would like to
show my sincere appreciation to my dear friends, Siete Amigos.And I also would like
to thank Korean students of Electrical Engineering, especially Kyubaek, Sungmin,
Hweerin, Jaehyup, Kicheol, and Youngil. The members of Korea University Alumni
Association at Minnesota are also very helpful for me to encourage and refresh.
Finally, I want to express my deepest appreciation and love to my family, beloved
parents, my sister and brother-in-law Chip, adorable wife Sora and lovely son Luke, for
their unlimited love and support.
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Abstract
One of the most important building blocks in modern IC design is the operational
amplifier. For the portable electrocardiogram (ECG), the operational amplifier is
employed to sense and amplify the electrical signal of heartbeat of human body. For the
battery powered portable ECG system, low supply voltage environments are required to
reduce power consumption and the result is a reduced input common mode range (ICMR)
of the op-amp. To overcome the reduced ICMR problem, complementary differential
pairs operated in parallel are commonly used to achieve a rail-to-rail input common mode
range. However, this complementary differential input pair structure can have a
substantial transconductance (gm) variation problem and a dead zone problem in a low
supply voltage environment and an extremely low supply voltage environment
respectively. In the past years, a number of techniques have been proposed to overcome
those problems for low- and extremely low-supply voltage environments. This
dissertation is focused on an op-amp applicable to a portable ECG system and in total
five novel rail-to-rail constant gm op-amps usful for circuits such as a portable ECG are
proposed. Three of those op-amps work in the low supply voltage environment and two
op-amps are proposed for the extremely low supply voltage environment. Cadence
SPECTRE simulation and TSMC 0.25-m CMOS technology are used to simulate and
lay out these works.
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Table of Contents
Acknowledgements ............................................................................................................ i
Abstract .............................................................................................................................. ii
Table of Contents ............................................................................................................. iii
List of Tables ..................................................................................................................... v
List of Figures ................................................................................................................... vi
Chapter 1. Introduction ................................................................................................. 1
1.1 Background and Motivation ................................................................................. 1
1.2 Requirements of Portable ECG Amplifier ............................................................ 5
1.3 Organization of The Dissertation .......................................................................... 8
Chapter 2. Literature Review for Low Supply Voltage Op-Amp ........................... 10
2.1 Low Supply Voltage Environment ..................................................................... 10
2.2 Tail Current Control Technique .......................................................................... 11
2.3 Maximum/Minimum Current Selection Technique ............................................ 16
2.4 Level Shifting Technique .................................................................................... 19
Chapter 3. Novel Low Supply Voltage Rail-to-Rail Op-Amps ................................ 22
3.1 New Level Shifting Technique : The Simplest Technique ................................. 22
3.2 Saturation Point Control Technique .................................................................... 27
3.3 Modified New Level Shifting Technique : Hybrid of 3.1 and 3.2 ...................... 36
Chapter 4. Literature Review for Extremely Low Supply Voltage Op-Amp ......... 40
4.1 Extremely Low Supply Voltage Environment .................................................... 40
4.2 Dynamic Level Shifting Technique .................................................................... 41
4.3 Bulk Driven Input Stage Technique ................................................................... 45
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4.4 Depletion Mode Input Pair Technique ................................................................ 47
4.5 Input Signal Compression Technique ................................................................. 49
Chapter 5. Novel Extremely Low Supply Voltage Rail-to-Rail Op-Amps ............. 53
5.1 Common Mode Elimination Technique .............................................................. 53
5.2 New Input Signal Compression Technique ........................................................ 57
Chapter 6. Simulation Results and Comparison ....................................................... 64
6.1 Simulation Results of New Level Shifting Technique ....................................... 64
6.2 Simulation Results of Saturation Point Control Technique ................................ 72
6.3 Simulation Results of Modified New Level Shifting Technique ........................ 77
6.4 Simulation Results of Common Mode Elimination Technique .......................... 83
6.5 Simulation Results of New Input Signal Compression Technique ..................... 87
Chapter 7. Conclusion ................................................................................................. 99
Bibliography .................................................................................................................. 101
Appendix ........................................................................................................................ 107
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List of Tables
Table 6.1 Simulation Results of Conventional and New Level Shifting Techniques .................... 67
Table 6.2 Simulation Results Comparison of Before and After Noise Reduction ......................... 70
Table 6.3 Comparison of Schematic and Post Layout Simulation Results .................................... 72
Table 6.4 Simulation Results Comparison of Before and After Noise Reduction ......................... 75
Table 6.5 Comparison of Schematic and Post Layout Simulation Results .................................... 77
Table 6.6 Schematic Simulation Results Comparison of Two Techniques ................................... 79
Table 6.7 Post Layout Simulation Results Comparison of Two Techniques ................................ 82
Table 6.8 Overall Simulation Results Comparison of Low Supply Voltage Techniques .............. 82
Table 6.9 Schematic Simulation Results Comparison of Two Techniques ................................... 86
Table 6.10 Schematic Simulation Results Comparison of Three Techniques ............................... 90
Table 6.11 Schematic Simulation Results Comparison of New input Signal Compression
Technique ....................................................................................................................................... 92
Table 6.12 Comparison of Schematic and Post Layout Simulation Results ................................. 95
Table 6.13 Schematic Simulation Results Comparison of All Five Novel Techniques without
Noise Reduction ............................................................................................................................. 96
Table 6.14 Post Layout Simulation Results Comparison of Four Novel Techniques .................... 96
Table A. 1 Simulation Results Comparisons of Strong and Weak Inversion Regions Operation 108
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List of Figures
Figure 1.1 Complementary Input Differential Pair Structure .......................................................... 2
Figure 1.2 Working Principle and Total Gm Variation of Low Supply voltage Environment ........ 3
Figure 1.3 Working Principle and Dead Zone of Extremely Low Supply voltage Environment .... 4
Figure 1.4 Structure of the Instrumentation Amplifier .................................................................... 6
Figure 2.1 Tail Current Control using Square Root Current Circuit .............................................. 12
Figure 2.2 Tail Current Control using Current Switch .................................................................. 14
Figure 2.3 Tail Current Control using Hex-Pair Structure ............................................................. 15
Figure 2.4 Maximum Current Selection Technique ....................................................................... 16
Figure 2.5 Total Transconductance of Maximum Current Selection Technique ........................... 17
Figure 2.6 Minimum Current Selection Block ............................................................................... 18
Figure 2.7 Minimum Current Selection Technique ....................................................................... 18
Figure 2.8 Input Stage of Level Shifting Technique ...................................................................... 20
Figure 2.9 Total Transconductance of Level Shifting Technique .................................................. 20
Figure 3.1 Structure Comparison of Conventional and New Level Shifting Technique ............... 23
Figure 3.2 Comparison of Total Transconductance Variation ....................................................... 25
Figure 3.3 Simulation Results of Total Transconductance Variation ............................................ 26
Figure 3.4 Total Transconductance Variations with 1.6V, 1.4V, and 1.2V ................................... 28
Figure 3.5 Structure and Working Principle of Saturation Point Control Technique .................... 31
Figure 3.6 Modified Saturation Point Control Technique ............................................................. 33
Figure 3.7 Total Transconductance Variations with Supply Voltage of 1.6V, 1.4V, and 1.2V .... 35
Figure 3.8 Structure and Working Principle of Modified New Level Shifting Technique ............ 37
Figure 3.9 Comparison of Total Transconductance Variations ..................................................... 39
Figure 4.1 Basic Concept of Dynamic Level Shifting Technique ................................................. 42
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Figure 4.2 Current Generator Block & Shifted Common Mode Voltages .................................... 44
Figure 4.3 Comparison of Gate Driven and Bulk Driven [19] ...................................................... 46
Figure 4.4 Concept of Bulk Driven Input Technique .................................................................... 46
Figure 4.5 Current Characteristic Comparison .............................................................................. 48
Figure 4.6 Concept of Depletion Mode Input Pair Technique ....................................................... 48
Figure 4.7 Hybrid Type of Depletion Mode Input and Bulk Driven Input Techniques ................ 49
Figure 4.8 Basic Concept of Input Signal Compression Technique .............................................. 50
Figure 4.9 Basic Concept of Input Signal Compression Technique .............................................. 51
Figure 5.1 Structure of Common Mode Elimination Technique ................................................... 54
Figure 5.2 Basic Concept of Common Mode Elimination ............................................................. 54
Figure 5.3 Differential Input Signal Extraction ............................................................................. 55
Figure 5.4 Comparison of Minimum CMRR ................................................................................. 56
Figure 5.5 Structure of New Input Signal Compression Technique .............................................. 58
Figure 5.6 Structure and Working Principle of Block 1 .............................................................. 59
Figure 5.7 Structure and Working Principle of Block 2 .............................................................. 60
Figure 5.8 Concept of differential Signal Extraction and Compensation ...................................... 61
Figure 5.9 Comparisons of Gain and Unity Gain Frequency......................................................... 61
Figure 5.10 Comparison of Transferred Differential Input Signal ................................................ 62
Figure 6.1 Overall Structure Comparison ...................................................................................... 65
Figure 6.2 Comparison of Conventional and New Level Shifting Technique ............................... 66
Figure 6.3 Input Referred Noise of New Level Shifting Technique .............................................. 68
Figure 6.4 Simulation Results Comparisons of Before and After Noise Reduction ...................... 69
Figure 6.5 Layout Picture of New Level Shifting Technique (125.82m93.18m) ................... 70
Figure 6.6 Comparisons of Schematic and Post Layout Simulations ............................................ 71
Figure 6.7 Overall Structure of Saturation Point Control Technique ............................................ 73
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Figure 6.8 Simulation Results Comparisons of Before and After Noise Reduction ...................... 74
Figure 6.9 Layout of Saturation Point Control Technique (118.38m83.1m) .......................... 75
Figure 6.10 Comparisons of Schematic and Post Layout Simulations .......................................... 76
Figure 6.11 Overall Structure Comparison of New and Modified New Level Shifting Technique ....................................................................................................................................................... 78
Figure 6.12 Schematic Simulation Results Comparison of Two Techniques ................................ 79
Figure 6.13 Input Referred Noise Comparison of Two Techniques .............................................. 80
Figure 6.14 Layout Picture of Modified New Level Shifting Technique (128.7m93.18m) ... 80
Figure 6.15 Post Layout Simulation Results Comparison of Two Techniques ............................. 81
Figure 6.16 Overall Structure Comparison of Input signal Compression Technique and CommonMode Elimination Technique ........................................................................................................ 84
Figure 6.17 Schematic Simulation Results Comparison of Two Techniques ................................ 85
Figure 6.18 Overall Structure of New Input Signal Compression Technique ............................... 88
Figure 6.19 Schematic Simulation Results Comparison of Three Techniques .............................. 89
Figure 6.20 Schematic Simulation Results Comparison of Before and After Noise Reduction .... 91
Figure 6.21 Layout Picture of New Input Signal Compression Technique (207.78m119.46m)
....................................................................................................................................................... 93
Figure 6.22 Comparison of Schematic and Post Layout Simulation Results................................. 94
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Chapter 1.
Introduction
1.1 Background and Motivation
One of the main trends of electronic biomedical devices is portability and wireless
operation. Because, for the future healthcare services, portable electronic health
monitoring devices will enable 24 hour health monitoring, home healthcare systems,
early detection of diseases and so on. Electrocardiogram (ECG) is one of the electronic
biomedical systems which senses the electrical signal of the heartbeat to detect abnormal
rhythms of the heart. A conventional ECG system, however, is very bulky and not
convenient for 24 hour monitoring due to wired connections. Portable ECG facilitates 24
hour monitoring for patients who have heart diseases and need cardiac monitoring in their
everyday life. With this trend of battery powered health monitoring systems, portable
biomedical devices demand circuits operating in low supply voltage.
In the ECG system, an op-amp often senses and amplifies the electrical signal of
the heart. The op-amp of the portable ECG may have to be operated in low supply
voltage environments for lower power consumption and the result of lowered supply
voltage is a reduced input common mode range (ICMR) of the op-amp. A commonly
used way to overcome reduced ICMR problem and ensure rail-to-rail input common
mode signal is complementary differential pairs operated in parallel (Figure 1.1). Because
both N-type and P-type differential pairs are employed in the input stage, the entire range
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of supply voltage, rail-to-rail, can be an input common mode range. One problem with
the complementary differential pair structure, however, is overall transconductance (gm)
variation in the middle range of the common mode input signal. There are two possible
situations according to the environment of supply voltage. The first situation is about two
times the transconductance variation problem with low supply voltage environment and
the second is dead zone problem with extremely low supply voltage environment.
Figure 1.2 shows that the working principle of complementary input differential
pair structure and the transconductance variation problem with a low supply voltage
environment. InFigure 1.2 (a), if a single input differential pair, either N-type or P-type,
is used, the turn off region of the input common mode voltage of N-type or P-type input
will limit a portion of the ICMR. The complementary input differential pair structure
employs both of N-type and P-type input differential pairs and ensures rail-to-rail input
common mode voltage range. The problem of this structure, however, with low supply
Figure 1.1 Complementary Input Differential Pair Structure
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voltage is that there is an approximately two-fold transconductance variation throughout
the common mode input range which results in a variable unity gain frequency and a
stability problem.Figure 1.2 (b) shows the total transconductance variation problem with
low supply voltage. Both N-type and P-type input differential pairs are turned on at the
same time in the middle range of common mode input signal and that causes about two
times the transconductance variation. In the past years, a number of constant gm
(a) Currents of Complementary Input Differential Pair Structure
(b) Total Transconductance Variation with Low Supply Voltage
Figure 1.2 Working Principle and Total Gm Variation of Low Supply voltage Environment
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techniques are proposed to overcome the transconductance variation problem of a low
supply voltage environment and three typical techniques are briefly explained in chapter
2.
The situation of an extremely low supply voltage environment is totally different
from the case of low supply voltage environment. With extremely low supply voltage,
both of N-type and P-type differential input pairs of complementary input differential pair
(a) Currents of Complementary Input Differential Pair Structure
(b) Total Transconductance Variation with Extremely Low Supply Voltage
Figure 1.3 Working Principle and Dead Zone of Extremely Low Supply voltage Environment
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structure are turned off or triode region in the middle range of common mode input
signal.Figure 1.3 shows currents of input pairs and total transconductance variation of
the extremely low supply voltage environment. Because the both input pairs are turned
off or in the triode region, the total transconductance is very small or almost zero in the
middle range of common mode input signal. Thus, this region is called the dead zone. A
few techniques are previously introduced to avoid the dead zone problem and some
typical techniques are explained in chapter 4.
In this dissertation, five novel techniques are proposed. The first three are new
level shifting technique, saturation point control technique, and modified new level
shifting technique and these three techniques are working in low supply voltage
environment. The other techniques are common mode elimination technique and new
input signal compression technique. Those techniques can be made to work in the
extremely low supply voltage environment.
1.2 Requirements of Portable ECG Amplifier
A conventional ECG system usually employs an instrumentation amplifier which
is also employed by other biomedical instruments such as EEG, EMG, and so on.Figure
1.4 shows the structure of the instrumentation amplifier and this structure has some
intrinsic characteristics which are suitable for ECG system. First, the instrumentation
amplifier has very high input impedance. For ECG systems, electrodes are usually used
to sense the electrical signal of heartbeat and a high input impedance is required for the
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ECG amplifier because of high impedance of electrode. The minimum allowable input
impedance of the ECG amplifier is typically 10 M ([3]) which is easily achieved in a
MOSFET amplifier since the input of the instrumentation amplifier is directly connected
to the gate of MOSFET and its input impedance is very high. The second requirement of
ECG amplifier is high common mode rejection ratio (CMRR). The ECG system is
required to sense only the cardiac signal and reject all other electrical common mode
signals typically from larger muscles in the body. In Figure 1.4, if and which aretwo inputs of the instrumentation amplifier have same voltage, the current which flow
through resistor is ideally zero and the voltage of and are the same. Thus, thereis no amplification of common mode voltage and the instrumentation amplifier has very
high CMRR. The third is a gain that can be changed by adjusting . The gain of theinstrumentation amplifier is expressed as below.
Figure 1.4 Structure of the Instrumentation Amplifier
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There are two registers for , , and , while only one register is required for (Figure 1.4). Hence, the gain of the instrumentation amplifier is easily controlled by
adjusting .For the amplifier of the portable ECG system, low power consumption is required
as well as all other requirements for the conventional ECG system mentioned before.
Basically, the portable ECG system is battery powered and for more battery life, low
power consumption and low supply voltage for an amplifier is essential. This dissertation
is focused on an operational amplifier for the portable ECG with low supply voltage and
extremely low supply voltage environment.
Listed below are some target specifications for the novel low supply voltage rail-
to-rail op-amps proposed in this dissertation. Gains of all amplifiers are larger than 40dB
and 3dB frequencies are around 150Hz. Phase margins are larger than 55. In [4],
acceptable input referred noise of ECG amplifier is 30Vp-p and 5V/
at 1Hz of
input referred noise is good enough for ECG signal acquisition [3]. Large transistor sizes
are used to reduce flicker noise at low frequencies and input referred noise is about
5V/ at 1Hz. CMRR, unity gain frequency, average power consumption, supplyvoltage, and gain variation of all proposed op-amps are compared with each other using
post layout simulation results in Chapter 6.
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1.3 Organization of The Dissertation
This dissertation is divided into seven chapters. Following this introduction,
previously introduced rail-to-rail amplifiers for low supply voltage environment are
described in Chapter 2. The low supply voltage environment is explained first and three
typical rail-to-rail techniques are described. Three typical rail-to-rail techniques for the
low supply voltage environment are tail current control technique, maximum/minimum
current selection technique and level shifting technique. Not all rail-to-rail constant-gm
techniques for low supply voltage amplifier can be categorized in these three techniques,
but these techniques are typical method for constant-gm of rail-to-rail operational
amplifier with low supply voltage.
In Chapter 3, three novel rail-to-rail constant-gm techniques for the low supply
voltage environment are proposed. The first technique is new level shifting technique.
This technique has similar concept with the conventional level shifting technique. For
this novel technique, however, only one diode connected NMOS is required and that is
the simplest method for rail-to-rail constant-gm op-amp. The second one is saturation
point control technique. This is novel transition regions technique and proposed to
overcome drawback of conventional and new level shifting technique. The last technique
is the modified new level shifting technique which is hybrid of new level shifting
technique and saturation point control technique. The transconductance variation of the
new level shifting technique can be reduced considerably using this technique.
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Literature review for previous technique of extremely low supply voltage rail-to-
rail op-amp is given in Chapter 4. Previously introduced techniques are dynamic level
shifting technique, depletion mode input pair technique, bulk driven input stage technique
and input signal compression technique.
Two novel techniques for extremely low supply voltage rail-to-rail constant-gm
op-amps are proposed in Chapter 5. The common mode elimination technique is the first
technique. This technique employs conventional input signal compression technique and
signal inverting blocks are introduced with resistors to eliminate the common mode input
signal. Because the common mode input signal is eliminated, very high CMRR is
achieved. The new input signal compression technique, is the second technique for the
extremely low supply voltage environment, and has the same basic concept as the
common mode elimination technique, but conventional input signal compression blocks
are replaced by a new input signal compression block to improve bandwidth and noise
performance, and reduce complexity.
In Chapter 6, all the post layout simulation results are shown and all proposed
techniques are compared. The conclusion is given in Chapter 7.
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Chapter 2.
Literature Review for Low Supply
Voltage Op-Amp
2.1 Low Supply Voltage Environment
As mentioned in Chapter 1, a low supply voltage often results in a reduced input
common mode range problem. The conventional complementary differential input pair
structure which overcomes reduced ICMR problem and ensures rail-to-rail input common
mode range has double the transconductance in the middle range of the input common
mode signal when compared to the higher and lower voltage regions of the common
mode signal. This doubled transconductance variation implies a two-fold variation of
gain and two-fold variation in unity gain frequency. The unity gain frequency variation
can cause serious stability problems. When the compensation capacitor is optimized for
sufficient phase margin for stable operation, the unity gain frequency varies by a factor of
two depending on the value of input common mode voltage, and consequently the phase
margin may not be enough and the whole system may be unstable for certain values of
common mode input (usually midway between the power supplies). Therefore, constant
transconductance as a function of common mode input is desirable for a low supply
voltage rail-to-rail op-amp. For this reason, several constant transconductance techniques
for low supply voltage rail-to-rail op-amp are proposed in the past. Three typical
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techniques from among those techniques are briefly explained in the following sections
of this chapter.
2.2 Tail Current Control Technique
The first typical technique for low supply voltage rail-to-rail op-amp is the tail
current control technique. In the low supply voltage environment, both N-type and P-type
input differential pairs of the complementary input pairs structure are turned on at the
same time in the middle range of the common mode input signal and the currents of the
middle range of both input pairs cause two times the transconductance variation (Figure
1.2). Thus, if the currents of both input pairs are controlled in the middle range of the
common mode input signal, the total transconductance can be kept constant. The currents
and transconductance of input pairs, and the total transconductance are expressed as
below.
( )
( ) (if )
From the above equations, for the constant total transconductance, ( )must bekept constant in the whole range of input common mode signal, because is constant.Therefore, in the middle range of input common mode signal, and should be onequarter of of high input common mode voltage and of low common mode voltage.
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A number of techniques employ this tail current control technique andFigure 2.1
shows the concept of this technique and total transconductance variation ([5]~[7]). Some
equations for explanation of this circuit are given below.
(a) Concept of Constant Square Root Current Circuit
(b) Total Transconductance Variation with Square Root Current Circuit
Figure 2.1 Tail Current Control using Square Root Current Circuit
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|| ||
The sum of source gate voltage difference, , of M1 and M2 is same as the sum of of M4 and M5. From the above equation, the sum of the square roots of and isconstant. And the currents of M4 and M5 are same with and . and are currentsof NMOS and PMOS input pairs, respectively. Therefore, ( ) can be keptconstant and as a result, the total transconductance is constant in the whole range of input
common mode signal (Figure 2.1 (b)).
Another method to control tail current is introduced in [8]~[10]. This technique
employs current switch to control tail current and conceptual circuit of this technique is
shown inFigure 2.2.When NMOS or PMOS input pair is turned off, the switch 2 (SW2)
or the switch 1 (SW1) diverts tail current , respectively. Using 1:3 current mirror,3 is added to tail current of PMOS or NMOS input pair. As a result, the totalcurrent of NMOS or PMOS input pair when the common mode input signal is close to
Vdd or Vss is 4 . Thus, ( )and the total transconductance can be kept
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constant in the whole range of input common mode signal.
The above square root circuit and 1:3 current mirror circuit, however, have two
limitations. The first limitation is that both techniques are based on drain current
quadratic characteristic. Those techniques cannot apply to deep sub-micrometer CMOS
devices because deep sub-micrometer CMOS devices do not follow quadratic
characteristic accurately. The second is two times variation of slew rate. The above two
techniques has two times the total current of input stage variation and that causes slew
rate variation. In [11], hex-pair structure is proposed to overcome these limitations. The
circuit of input stage of this technique is shown in Figure 2.3. There are three PMOS
input pairs and three NMOS input pairs. When the common mode input signal is close to
Vss, only PMOS input pairs, block P1 and block P2, are turned on. The total current of
Figure 2.2 Tail Current Control using Current Switch
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block P1 is 2and one of this total current is diverted to block N2. Thus, 2,one from block P1 and another from block P2, are transferred to the foldedcascode current summing stage. When the common mode input signal is close to Vdd,
only the input pairs of block N1 and N2 are turned on and, with the same working
principle of PMOS input pairs case, 2are transferred to the next stage. In the middlerange of input common mode signal, only the input pairs of block P1 and block N1 are
turned on. One from block P1 is diverted to block N2 and NMOS input pair of blockN2 is turned off. And one from block N1 is diverted to block P2 and PMOS inputpair of block P2 is turned off. Hence, 2
, one
from block P1 and another
from
block N1, are transferred to the next stage. Because the total currents of input pairs are
always 2 in the whole range of input common mode signal, there are no significantvariations of total transconductance and slew rate.
Figure 2.3 Tail Current Control using Hex-Pair Structure
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2.3 Maximum/Minimum Current Selection Technique
The maximum/minimum current selection technique is the second typical
technique for low supply voltage rail-to-rail op-amp. The basic concept of this technique
is only the current of one pair, larger or smaller current, is transferred to the next stage.
Therefore, the only one input pairs transconductance can affect the total gain. Maximum
current selection technique is introduced in [13] and Figure 2.4 shows the circuit of the
input stage of maximum current selection technique. When the current of PMOS input,
(a) Circuit of Maximum Current Selection Technique
(b) Maximum Current Selection Block
Figure 2.4 Maximum Current Selection Technique
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, is larger than the current of NMOS input, , the currents of M1 and M2, and ,equal (Figure 2.4 (b)). Because is smaller than , the current of M3, , equals .In this situation, M4 is turned off and the currents of M4 and M5, and , are zero.Thus, equals , because equals sum of and . On the contrary, if islarger than , the currents of M1, M2, and M3 equal . Then, the currents of M4 andM5 are
. Therefore,
equals
, because
equals sum of
and
, . As a result, only the larger current and the largertransconductance can be transferred to the folded cascode current summing stage.Figure
2.5 shows the total transconductance variation of maximum current selection technique.
In [12], the minimum current selection technique (which has a similar concept to
the maximum current selection technique) is proposed. The circuit of the minimum
current selection block is illustrated inFigure 2.6.If is larger than , and . is , because is sum of and . equals andis sum of and . So, equals , because .
Figure 2.5 Total Transconductance of Maximum Current Selection Technique
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On the other hand, when is smaller than , . In this situation,M2 works in triode region and M3 and M4 are turned off. Thus . As aresult, the smaller current is selected as for all cases.
Figure 2.7 shows the input stage circuit of minimum current selection technique.
Two input currents of the minimum current selection block are and .When the current of NMOS input pair, , is larger than the current of PMOS pair, ,
Figure 2.6 Minimum Current Selection Block
Figure 2.7 Minimum Current Selection Technique
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is smaller than , and will be the output current of theminimum current selection block. Thus, the transconductance of NMOS input pair is
transferred to the folded cascode current summing stage. If is larger than , will be the output current of the minimum current selection block, and the
transconductance of PMOS input pair is transferred to the next stage. As a result, total
transconductance variation is same with the maximum current selection technique (Figure
2.5).
2.4 Level Shifting Technique
The previously explained techniques, in Chapter 2.3 and 2.4, require additional
complex circuitry and often have degraded CMRR. To overcome these drawbacks, a
simple constant transconductance rail-to-rail technique is proposed in [1]. This technique
is level shifting technique and the input stage of this technique is illustrated in Figure 2.8.
In this technique, two PMOS source followers are used for common mode input level
shifting. The input signal of the amplifier is directly connected to the input of a PMOS
source follower and N-channel input differential pair, and the output of the PMOS source
follower is connected to the input of the P-channel differential pair. Thus, the shifted
input signal is fed to the input of the P-channel differential pair.
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Where is the shifted input signal (by the PMOS source follower) and is thePMOS transistor gate-source voltage, and and are the overdrive voltage andthreshold voltage of the PMOS transistor, respectively. The current and transconductance
of P-channel input differential pair are shifted towards the negative as much as . As
Figure 2.8 Input Stage of Level Shifting Technique
Figure 2.9 Total Transconductance of Level Shifting Technique
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a result, the transition regions of the N-channel and P-channel input differential pairs are
overlapped.
The overall transconductance variation is shown inFigure 2.9. If PMOS source
followers are not used to shift input common mode signal, the overall transconductance
has doubles in the middle range of input common mode signal (Figure 1.2 (b)). But the
transconductance of the PMOS input pair is shifted by the PMOS source follower and
transition regions of NMOS and PMOS are overlapped (Figure 2.9). Therefore, total
transconductance can be kept constant in the whole range of input common mode signal.
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Chapter 3.
Novel Low Supply Voltage Rail-to-Rail
Op-Amps
In Chapter 2, some typical techniques which are previously proposed in the past
years are briefly explained. In this chapter, three novel techniques for a constant
transconductance rail-to-rail op-amp of low supply voltage environment are introduced.
The first technique is new level shifting technique and the second one is saturation point
control technique. The last technique is modified new level shifting technique which is
hybrid of the first and the second technique.
3.1 New Level Shifting Technique : The Simplest Technique
The conventional level shifting technique is proposed in [1] and briefly explained
in Chapter 2. In [1], 1.2m CMOS technology is used and the supply voltage is 1.5V.
New level shifting technique is designed with TSMC 0.25m CMOS technology and
1.6V single supply voltage. For direct comparison, the conventional level shifting
technique is re-designed and simulated with TSMC 0.25m CMOS technology and 1.6V
single supply voltage.
As explained in Chapter 2.4, the conventional level shifting technique is very
simple and has no serious degradation of CMRR. New level shifting technique, however,
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has same concept and more simple structure. The conventional level shifting technique
requires two PMOS source followers, totally four MOSFETs, but only one diode
connected NMOS is employed for new level shifting technique. Figure 3.1 shows
structure comparison of these two techniques.Figure 3.1 (a) is the input stage structure of
(a) Input Structure of Conventional Level Shifting Technique
(b) Input Structure of New Level Shifting Technique
Figure 3.1 Structure Comparison of Conventional and New Level Shifting Technique
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the conventional level shifting technique. Because of two PMOS source followers, the
common mode input signal of PMOS differential input pair is shifted as much as
and the current and transconductance of PMOS input pair areshifted towards the negative as much as of PMOS source follower.
Figure 3.1 (b) shows the structure of new level shifting technique. There are
complementary differential input pair operated in parallel and only one diode connected
NMOS is added above the tail current source of the N-channel differential input pair. If a
diode connected NMOS is not added, the structure is simply a conventional
complementary differential input pair operated in parallel and the transconductance of the
amplifier varies from gm to about 2gm in the middle range of the common mode input.
For this conventional complementary differential input pair, the minimum input voltage
of the N-channel input differential pair is given below.
In the above equation, is the overdrive voltage of NMOS tail current source and is the gate-source voltage difference of the N-channel input differential pair. For the case
of the proposed novel structure, the minimum input voltage of N-channel input
differential pair is given below.
As shown in the above equation, another is required because of diode connectedNMOS above the NMOS tail current source. Thus, the current and transconductance of
N-channel input differential pair are shifted as much as . If of PMOS source
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follower of the conventional level shifting technique is same with of diodeconnected NMOS of new level shifting technique, the shifting amount of two techniques
is exactly same and the total transconductance variations have same result. Figure 3.2
shows the comparison of total transconductance variation concepts of two techniques.
(a) Total Transconductance Variation of Conventional Level Shifting Technique
(b) Total Transconductance Variation of New Level Shifting Technique
Figure 3.2 Comparison of Total Transconductance Variation
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Figure 3.3 shows the simulation results of the total transconductance variations.
Figure 3.3 (a) is the case of the conventional level shifting technique with 1.6V single
supply voltage and TSMC 0.25m technology. The result shows 4.97% of total
transconductance variation. The simulation result of new level shifting technique is
shown in Figure 3.3 (b). Because of addition of diode connected NMOS, the slope of
(a) Simulation Result of Conventional Level Shifting Technique
(b) Simulation Result of New Level Shifting Technique
Figure 3.3 Simulation Results of Total Transconductance Variation
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transition region of NMOS is gentler than that of PMOS. This mismatch cause larger
total transconductance variation and the result shows 8.66% of total variation. To reduce
this larger total transconductance variation, modified new level shifting technique is
proposed in Chapter 3.3.
New level shifting technique proposed in this chapter requires only one MOSFET
for a constant transconductance and that is the simplest technique for a rail-to-rail op-amp
with low supply voltage environment. One drawback of this technique is relatively large
total transconductance variation.
3.2 Saturation Point Control Technique
As mentioned before, the advantages of conventional and modified overlapped
transition regions techniques using voltage level shifting are simplicity and high CMRR.
One of the main drawbacks of those techniques, however, is a limited amount of voltage
shifting. The comparison of two techniques, the conventional and new level shifting
technique, is given in Chapter 3.1 with 1.6V single supply voltage. However, if supply
voltage is lower than 1.6V, required amount of voltage shifting for a constant
transconductance is smaller than what is required for a 1.6V supply voltage. Because of
the minimum required for active mode operation of transistors, the voltage shiftingamount of input common mode signal cannot be lower than the power supply limitedamount of voltage shifting. Even if the shifted amount of input common mode signal is
lower than the limited amount using sub-threshold current, the aspect ratio of transistors
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which are used to shift common mode input signal should be extremely large and those
transistors cannot be used practically.
(a) 1.6V Single Supply Voltage
(b) 1.4V Single Supply Voltage
(c) 1.2V Single Supply Voltage
Figure 3.4 Total Transconductance Variations with 1.6V, 1.4V, and 1.2V
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Figure 3.4 shows the simulation results of total transconductance variation for the
conventional and new level shifting technique with the supply voltage of 1.6V, 1.4V, and
1.2V. TSMC 0.25-m technology is used to simulate this work and the minimum
threshold voltages of PMOS and NMOS are about -500mV and 450mV which are the
minimum required for active mode operation of PMOS source follower and diodeconnected NMOS, respectively. The required voltage shifting amount for a constant
transconductance is 550mV, 330mV, and 110mV with 1.6V, 1.4V, and 1.2V of supply
voltage respectively. For the case of 1.6V supply voltage (Figure 3.4 (a)), required voltage
shifting amount for a constant transconductance is 550mV which is larger than the
minimum of PMOS and NMOS, and the simulation results show 4.97% and 8.66%variations of overall transconductance with aspect ratios of for PMOS sourcefollower and for diode connected NMOS. However, with the same aspect ratiosof PMOS source follower and diode connected NMOS,Figure 3.4 (b) and (c) show that
overall transconductances cannot be kept constant because required voltage shifting
amount for a constant transconductance is smaller than the minimum . Using sub-threshold drain current, overall transconductance can be kept constant, but the aspect
ratios of PMOS source follower would need to be ( 610 /1) and ( 910 /1) with 1.4V and 1.2V
supply voltages, respectively. For diode connected NMOS, (3 410 /1) and (3 710 /1) of the
aspect ratio are required with 1.4V and 1.2V supply voltage. Those aspect ratios are
obviously impractical and the conventional and new level shifting techniques have a
limited amount of voltage shifting as a result.
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Basically, the concepts of the conventional and new level shifting technique are
overlapped transition regions of the transconductances of NMOS and PMOS. With the DC
voltage level shifting technique, another type of overlapped transition regions technique is
also introduced in [1]. The main concept of that technique is saturation point control of
current in N- and P-channel differential input pairs. This type of overlapped transition
regions technique does not have a limited amount of voltage shifting. Proposed technique
controls the aspect ratios of the input differential pairs transistors and the optimized aspect
ratios for constant-gm are 1/5 and 1 for NMOS and PMOS respectively. As mentioned in
[1], those aspect ratios are too small and degrade the noise performance and transistors
mismatch insensitivity.
A novel overlapped transition regions technique proposed in this chapter has the
same basic concept as a previously introduced technique that controls the current
saturation points of differential input pairs. We do not control the aspect ratios of
differential input pairs transistors, but rather control the saturation point of a current
source.
Figure 3.5 shows the structure and the basic working principle of saturation point
control technique with simulation results. M1 and M2 in Figure 3.5 (a) are the current
source of the N-channel input pair and M2 is added to lower transconductance variation in
the saturation region. In Figure 3.5 (b), without saturation point control, the saturation
point of current of the N-channel input pair is indicated as . Without saturation pointcontrol, M3 is not added and is voltage of sources of the N-channel input pair. With thiscondition, in the turn-on region, the triode region and the saturation region of N-channel
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(a) Structure of Saturation Point Control Technique
(b) Working Principle
(c) Simulation Results with 1.2V Single Supply Voltage
Figure 3.5 Structure and Working Principle of Saturation Point Control Technique
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differential input pair, the voltage of varies along with input common mode voltage(Figure 3.5 (c)). However, with saturation point control, the voltage of is loweredbecause of the addition of M3 (Figure 3.5 (c)) and the voltage difference between the drain
and source of M2, , is lowered. As a result, a larger input common mode voltage isneeded to saturate M2 and the saturation point, , is shifted to (Figure 3.5 (b)). InFigure 3.5 (c), the cut off voltage of the PMOS input pair is about 850mV of the input
common mode voltage and that voltage must be the same as the shifted saturation point
voltage of NMOS input pair,
. For the saturation of M2 at 850mV of input common
mode voltage, the voltage difference of and must be the same as ., , and are the gate-source voltage, threshold voltage, and drain-sourcevoltage of M2 respectively. From the below equations, the value of is about 160mV at850mV of input common mode voltage and should be 880mV. The case of the P-channel input pair is symmetric with the case of the N-channel input pair and the value of
is about 360mV when there is 300mV of input common mode voltage, which is thecut off voltage of N-channel input pair. The simulation result of saturation point control is
shown inFigure 3.5 (c). For this simulation, 1.2V single supply voltage is used.
(Saturation of M2)
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(a) Structure of Modified Saturation Point Control Technique
(b) Simulation Results with 1.2V Single Supply Voltage
(c) and Current of NMOS Pair with Modified TechniqueFi ure 3.6 Modified Saturation Point Control Techni ue
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The simulation result of Figure 3.5 (c) shows 7.48% variation of overall
transconductance and for better performance, some modification is required. Shifted
saturation points, and , are well controlled, but the variation of overalltransconductance in the overlapped transition regions degrade the performance. Todecrease this variation, the voltage of and are modified.Figure 3.6 (a) shows thestructure of modified saturation point control technique. PMOS and NMOS source
followers are added to control the voltage of and , respectively. The input signal ofthe PMOS source follower comes from the sources of the N-channel input pair and this
signal is the same as the signal of without M3 of Figure 3.5 (c). PMOS sourcefollower shifts this signal as much as of PMOS and this shifted signal is connected to.Figure 3.6 (c) shows that before modification, is constant and cannot control thecurrent of the N-channel input pair in the transition region. of the modified technique,however, varies along with the input common mode voltage and set to 880mV at 850mV
of input common mode voltage to control . Thus, in the transition region of themodified technique, and of M3 are smaller than those of the unmodified technique.As a result, because of lowered of M3, the current of N-channel input pair is loweredin the transition region and the graph of transconductance is more linear than unmodified
one (Figure 3.6 (c)). The case of the P-channel input pair is symmetric with the case of the
N-channel input pair. The simulation result shows that the variation of overall
transconductance of the modified saturation point control technique is 3.35% (Figure 3.6
(b)).
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Figure 3.7 shows the simulation results of overall transconductance variation with
supply voltage of 1.6V, 1.4V and 1.2V using the saturation point control technique which
is the new overlapped transition regions technique proposed in this chapter. These results
demonstrate that if overall transconductance is larger than the transconductance of N- or
P-channel input pair in the middle range of common mode input signal, the saturation
point control technique can be used generally with any supply voltage without limited
amount of voltage shifting. In addition, with 1.6V supply voltage, the overall
transconductance variation of the saturation point control technique is 3.35% and better
than the conventional and modified overlapped transition regions technique. Overall
transconductance variations of the conventional and modified overlapped transition
regions technique are 4.97% and 8.66%, respectively.
Figure 3.7 Total Transconductance Variations with Supply Voltage of 1.6V, 1.4V, and 1.2V
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The saturation point control technique which is novel overlapped transition regions
technique is introduced to overcome the drawback of the conventional and new level
shifting technique. This technique has no limitation of voltage shifting amount which is
one of main drawback of the conventional and new level shifting technique. Additionally,
this technique has smaller total transconductance variation than that of the conventional
and new level shifting technique with the same supply voltage even though this technique
is slightly complicated.
3.3 Modified New Level Shifting Technique : Hybrid of 3.1 and 3.2
New level shifting technique is introduced in Chapter 3.1 and that is the simplest
technique of constant transconductance rail-to-rail op-amp for the low supply voltage
environment. As mentioned in Chapter 3.1, one of the main drawbacks is relatively large
total transconductance variation, 8.66%. That is caused by the slope mismatch of
transconductance in the transition regions of NMOS and PMOS input differential pairs.
Because of diode connected NMOS, the saturation point of NMOS input pairs current is
shifted and that results in the gentle slope of NMOS transconductance in the transition
region. In Chapter 3.2, saturation point control technique is proposed and that technique
controls the saturation point of currents of NMOS and PMOS input differential pairs.
Therefore, if the concept of saturation point control technique is employed for new level
shifting technique, the slope mismatch of transconductance can be minimize.
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(a) Structure of Modified New Level Shifting Technique
(b) Voltage of
(c) Total Transconductance Variation
Figure 3.8 Structure and Working Principle of Modified New Level Shifting Technique
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Figure 3.8 shows the structure and the working principle of modified new level
shifting technique. The diode connected NMOS, M1, shifts the graph of voltage asmuch as of M1 and that causes the shifting of transconductance of NMOS input pair.However, in turning on region of NMOS, the slope of with M1 is gentler than that of without M1 due to the diode connected NMOS, M1 (Figure 3.8 (b)). That is the source of
slope mismatch of transconductance. The saturation point control technique introduced in
Chapter 3.2 employs one NMOS above the NMOS tail current source and one PMOS
below the PMOS current source to control saturation points of NMOS and PMOS input
pairs current. This concept is employed by modified new level shifting technique. In
Figure 3.8 (a), M2 is added below the PMOS tail current source to control the saturation
point of PMOS input pair current and the slope of PMOS transconductance is gentler than
that of new level shifting technique (Figure 3.8 (c)).
Figure 3.9 shows the simulation results comparison of the total transconductance
variations of two techniques. New level shifting technique has 8.66% of total
transconductance variation. But, modified new level shifting technique employs the
saturation point control technique and only has 2.63% of total transconductance
variation. Modified new level shifting technique does not degrade the main advantage of
new level shifting technique, simplicity, and dramatically reduces the total
transconductance variation from 8.66% to 2.63%. Modified new level shifting
technique requires only two MOSFETs. One is diode connected NMOS which is used to
shift the transconductance of NMOS input differential pair and another is PMOS which is
employed to control the saturation point of current of PMOS input differential pair.
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(a) Simulation Result of New Level Shifting Technique
(b) Simulation Result of Modified New Level Shifting Technique
Figure 3.9 Comparison of Total Transconductance Variations
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Chapter 4.
Literature Review for Extremely Low
Supply Voltage Op-Amp
4.1 Extremely Low Supply Voltage Environment
In Chapter 1, the total transconductance problems of low supply voltage and
extremely low supply voltage environments are mentioned. As shown in Figure 1.2 and
Figure 1.3, the dead zone problem of an extremely low supply voltage environment is
totally different from the two-fold transconductance variation problem of a low supply
voltage environment. For an extremely low supply voltage environment, some special
techniques are required to increase the total transconductance of middle range of the
input common mode signal to the level of the other regions of common mode input. In
the dead zone of an extremely low supply voltage environment, the total
transconductance is very small or almost zero. Therefore, the gain will be very small or
almost zero and that is markedly different from the two-fold variation of the gain and the
unity gain frequency in the low supply voltage environment. In the past years, several
techniques have been proposed for an extremely low supply voltage op-amp. Some
techniques use bulk of NMOS or PMOS input differential pair as a input node to avoid
the dead zone, and some techniques modify or compress the input signal into the
acceptable region of NMOS or PMOS input differential pair. In the following sections of
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this chapter, four typical techniques for an extremely low supply voltage environment are
explained.
4.2 Dynamic Level Shifting Technique
Dynamic Level shifting Technique was first proposed in [14] and later studied in
[15] ~ [17]. The basic concept of this technique is shown in Figure 4.1.Two inputs are
directly connected to the resistors, R1 ~ R4. The top and bottom of resistors are
connected to the variable current sources, , which currents are generated by the levelshift current generator. The conceptual graph of the generated current is shown inFigure
4.1 (b). The generated current, , is controlled by the common mode input signal. Whenthe common mode input signal is around the supply rail, ground or , the is zero andat the middle point of the common mode input signal, the reaches the maximum value.The input common mode voltages of NMOS and PMOS input pairs are given by
Where and are the input common mode voltages of NMOS and PMOS inputpairs, respectively, and is the original input common mode voltage. Figure 4.1 (c)shows the conceptual graph of , and . In the left half region of the figure,the input common mode voltage of PMOS input pair, , exists in the acceptableregion of PMOS input pair and the input common mode voltage of NMOS input pair,
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(a) Conceptual Input Circuit of Dynamic Level Shifting Technique
(b) Current from the Level Shift Current Generator Block
(c) Shifted Input Common Mode Voltage of NMOS and PMOS Input Pairs
Figure 4.1 Basic Concept of Dynamic Level Shifting Technique
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, exists in the acceptable region of NMOS input pair in the right half region.Therefore, the dead zone problem can be resolved by this technique.
The main part of this technique is the level shift current generator.Figure 4.2 (a)
shows the level shift current generator block. Some equations for the explanation of this
block are given below.
The generated current,
, is current difference of
and
, and that is difference of
and . When is larger than , is and is zero if is equal or smaller than . Thus, in the middle range of inputcommon mode signal, both pairs are turned off which means is zero, and willbe . Figure 4.2 (b) and (c) show simulation results of generated current, , andinput common mode voltages of NMOS and PMOS input pairs,
and
.
The basic concept of the dynamic level shifting technique is that the voltage
shifting amount of input common mode signal is controlled by the common mode
voltage. There is no voltage shifting around the supply rails, ground or , but in the
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(a) Level Shift Current Generator Block
(b) Simulation Result of Generated Current [15]
(c) Simulation Result of Input Common Mode Voltage of NMOS and PMOS Input Pairs [15]
Figure 4.2 Current Generator Block & Shifted Common Mode Voltages
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middle range of the input common mode signal, the common mode voltages of NMOS
and PMOS input pairs are shifted into the acceptable range of NMOS and PMOS input
pairs. Thus, the dead zone problem can be avoided using this technique. In the input
structure of this technique, however, two input signals of op-amp are directly connected
to the resistors and this technique has finite input impedance. As mentioned in Chapter 1,
one of the main requirements of the ECG amplifier is very high input impedance, almost
infinity. Therefore, this technique is not suitable for the portable ECG amplifier.
4.3 Bulk Driven Input Stage Technique
In [18] and [19], several types of bulk driven input stage technique are proposed.
The basic concept of bulk driven input stage technique is using bulk transconductance,
, rather than which is the transconductance when the gate of MOSFET is used asan input node. Usually, the gate of MOSFET is used as an input node and the voltage
difference of gate and source of input MOSFET, , has to be larger than the thresholdvoltage, , to turn on the input MOSFET. This threshold voltage of input MOSFETmakes the dead zone problem difficult to avoid for the extremely low supply voltage
environment. If the bulk of input MOSFET is used as an input node, however, the input
MOSFET is turned on with very small input voltage even though the input voltage is
smaller than the negative supply rail. Figure 4.3 ([19]) shows the comparison of gate
driven case and bulk driven case. For the gate driven case, the bulk is connected to the
source of NMOS which is grounded, and for the bulk driven case, the gate of NMOS is
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connected to . In these cases, the supply voltage range is from ground to 1.5V. Whenthe gate is used as an input node, the input voltage should be larger than about 1V to turn
on the MOSFET. But for the bulk driven case, the MOSFET is turned on in the whole
range of input voltage from 0 to 1.5V. Thus, the rail-to-rail input stage can be achieved
using bulk driven input technique.Figure 4.4 shows simple conceptual input structure of
bulk driven input stage technique.
Figure 4.3 Comparison of Gate Driven and Bulk Driven [19]
Figure 4.4 Concept of Bulk Driven Input Technique
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One of the main disadvantages of this technique is low input impedance. As
mentioned in Chapter 4.2, very high input impedance is required for the portable ECG
amplifier. Another disadvantage of this technique is that is usually smaller than .Thus, large body effect coefficient, , is required because bulk transconductance, isproportional to the body effect coefficient, . Because of these disadvantages, this
technique is not appropriate for the portable ECG either.
4.4 Depletion Mode Input Pair Technique
The depletion mode input pair technique is proposed in [20]. The depletion mode
MOSFET has a physically implanted channel. Because a channel is formed intrinsically,
the depletion mode MOSFET has drain current even if the voltage difference between the
gate and source is zero or negative. Figure 4.5 shows the current characteristic
comparison of N-channel depletion mode MOSFET and enhancement mode MOSFET.
Depletion mode input pair technique employs the depletion mode MOSFETs as an input
pair and has no dead zone problem because the depletion mode MOSFET has intrinsic
channel and negative value of the threshold voltage, (Figure 4.6).In this technique, because the input signal is directly connected to the gate of the
depletion mode input pair, the input impedance of this structure is very high, almost
infinity. Using this high input impedance characteristic of depletion mode input pair
technique, hybrid type of depletion mode input pair technique and bulk driven input
technique is proposed in [18]. Basic concept of the input stage of this technique is shown
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in Figure 4.7. Because the depletion mode input pair technique is employed, the input
impedance of this structure is quite high, and the source of the depletion mode NMOS
input differential pair is connected to the bulk of the PMOS pair. Thus, the original input
signal is shifted by the depletion mode NMOS input differential pair and this shifted
Figure 4.5 Current Characteristic Comparison
Figure 4.6 Concept of Depletion Mode Input Pair Technique
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input signal is fed to the bulk of