MEMS Switches Seminar Report ‘03
INTRODUCTION
Compound solid state switches such as GaAs MESFETs and PIN diodes
are widely used in microwave and millimeter wave integrated circuits (MMICs)
for telecommunications applications including signal routing, impedance
matching networks, and adjustable gain amplifiers. However, these solid-state
switches have a large insertion loss (typically 1 dB) in the on state and poor
electrical isolation in the off state. The recent developments of micro-electro-
mechanical systems (MEMS) have been continuously providing new and
improved paradigms in the field of microwave applications. Different
configured micromachined miniature switches have been reported. Among
these switches, capacitive membrane microwave switching devices present
lower insertion loss, higher isolation, better nonlinearity and zero static power
consumption. In this presentation, we describe the design, fabrication and
performance of a surface micromachined capacitive microwave switch on glass
substrate using electroplating techniques.
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MEMS Switches Seminar Report ‘03
RF MEMS TECHNOLOGY
Basically RF MEMS switches are of two configurations-:
RF series contact switch
RF shunt capacitive switch
Currently, both series and shunt RF MEMS switch configurations are
under development, the most common being series contact switches and
capacitive shunt switches.
RF Series Contact Switch
An RF series switch operates by creating an open or short in the
transmission line, as shown in Figure 1. The basic structure of a MEMS contact
series switch consists of a conductive beam suspended over a break in the
transmission line. Application of dc bias induces an electrostatic force on the
beam, which lowers the beam across the gap, shorting together the open ends of
the transmission line1. Upon removal of the dc bias, the mechanical spring
restoring force in the beam returns it to its suspended (up) position. Closed-
circuit losses are low (dielectric and I2R losses in the transmission line and dc
contacts) and the open-circuit isolation from the ~100 μm gap is very high
through 40 GHz. Because it is a direct contact switch, it can be used in low-
frequency applications without compromising performance. An example of a
series MEMS contact switch, the Rockwell Science Center MEMS relay, is
shown in Figure 2.
1
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MEMS Switches Seminar Report ‘03
Figure 1. Circuit equivalent of RF MEMS series contact switch.
Anchor
RF line RF line
Drive capacitor
Contact shunt
Spring
Figure 2. Structure and operation of MEMS dc series switchi.
RF Shunt Capacitive Switch
A circuit representation of a capacitive shunt switch is shown in Figure 3.
In this case, the RF signal is shorted to ground by a variable capacitor.
Specifically, for RF MEMS capacitive shunt switches, a grounded beam is
suspended over a dielectric pad on the transmission line (see Figure 4). When
the beam is in the up position, the capacitance of the line-dielectric-air-beam
configuration is on the order of ~50 fF, which translates to a high impedance path
to ground through the beam [IC=1/(C)]. However, when a dc voltage is applied
between the transmission line and the electrode, the induced electrostatic force
pulls the beam down to be coplanar with the dielectric pad, lowering the
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Biased - ON
Unbiased - OFF
MEMS Switches Seminar Report ‘03
capacitance to pF levels, reducing the impedance of the path through the beam
for high frequency (RF) signal and shorting the RF to ground. Therefore,
opposite to the operation of the series contact switch, the beam in the up position
corresponds to a low-loss RF path to the output load, while the beam in the down
position results in RF shunted to ground and no RF signal at the output load .
While the shunt configuration allows hot-switching and gives better linearity,
lower insertion loss than the MEMS series contact switch, the frequency
dependence of the capacitive reactance restricts high quality performance to high
RF signal frequencies (5-100 GHz), whereas the contact switch can be used from
dc levels.
Figure 3. Circuit equivalent of RF MEMS series contact switch.
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MEMS Switches Seminar Report ‘03
Figure 4 capacitive RF MEMS switch.. (Top and cross-sectional view)
SWITCH DESIGN AND OPERATION
The geometry of a capacitive MEMS switch is shown in Fig.4. The
switch consists of a lower electrode fabricated on the surface of the glass
wafer and a thin aluminum membrane suspended over the electrode. The
membrane is connected directly to grounds on either side of the electrode
while a thin dielectric layer covers the lower electrode. The air gap
between the two conductors determines the switch off-capacitance. With
no applied actuation potential, the residual tensile stress of the membrane
keeps it suspended above the RF path. Application of a DC electrostatic
field to the lower electrode causes the formation of positive and negative
charges on the electrode and membrane conductor surfaces. These charges
exhibit anattractive force which, when strong enough, causes the
suspended metal membrane to snap down onto the lower electrode and
dielectric surface, forming a low impedance RF path to ground.
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MEMS Switches Seminar Report ‘03
The switch is built on coplanar waveguide (CPW) transmission
lines, which have an impedance of 50 that matches the impedance of the
system. The width of the transmission line is 160 m and the gap between
the ground line and signal line is 30 m. The insertion loss is dominated
by the resistive loss of the signal line and the coupling between the signal
line and the membrane when the membrane is in the up position. To
minimize the resistive loss, a thick layer of metal needs be used to build
the transmission line. The thicker metal layer results in a bigger gap that
reduces the coupling between signal and ground yet also requires higher
voltage to actuate the switch. To achieve a reasonable actuation voltage, a
4-m-thick copper is used as the transmission line. The glass wafer is
chosen for the RF switch over a semi-conductive silicon substrate since
typical silicon wafer is too lossy for RF signal.
When the membrane is in the down position, the electrical isolation
of the switch mainly depends on the capacitive coupling between the
signal line and ground lines. The dielectric layer plays a key role for the
electrical isolation. The smaller the thickness and the smoother the surface
of the dielectric layer, the better isolation of the switch is. But there is
another trade-off here. When the membrane is pulled down, the biased
voltage is directly applied across the dielectric layer. Since this layer is
very thin, the electric field within the dielectric layer is very high. The
thickness of the dielectric layer should be chosen such that the electric
field will never exceed the breakdown electric field of the dielectric
material. The silicon nitride film has breakdown electric field as high as
several mega-volts per centimeter and can be utilized as dc block
dielectric layer. In this project, the thickness of the silicon nitride layer is
chosen as 0.2 m to accomplish the dc block and RF coupling purpose.
FABRICATION
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MEMS Switches Seminar Report ‘03
The switches were fabricated by surface micro-machining
techniques with a total of four masking level. No critical overlay
alignment was required. Fig. shows the essential process steps:
1. Ti/Cu seed layer deposition: The starting substrate was a 2-inch glass
wafer. A layer of titanium (0.05 m) and copper (0.15m) was sputtered
on the substrate as seed layer for electroplating.
2. Silicon nitride deposition: A layer of siliconnitride (0.2m) was
deposited and patterned as DC block by using PECVD and reactive ion
etch (RIE).
3. Copper electroplating: A photoresist layer was spin coated and
patterned to define the electroplatingarea. Then, a 4-m-thick copper
layer was electroplated to define the coplanar waveguide and the posts for
the membranes.
4. Aluminum deposition: A layer of aluminum (0.4m) was deposited by
using electron beam evaporation and patterned to form the top electrode in
the actuation capacitor structure.
5. Release: The photoresist sacrificial layer was removed to finalize the
switch structure.
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MEMS Switches Seminar Report ‘03
TEST RESULTS AND DISCUSSIONS
The probe station and network analyzer (HP 8510C) were used to
characterize the capacitive MEMS switch. Fig. 3 shows the micrograph of a
switch under test. When the switch is unactuated and the membrane is on the up
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MEMS Switches Seminar Report ‘03
position, the switch is called in off-state. When the switch is actuated and the
membrane is pulled down, the switch is called in on-state.
The major characteristics of the switch are the insertion loss when the
signals pass through and the isolation when signals are rejected. In the off-state
the RF signal passes underneath the membrane without much loss. In the on-
state, between the central signal line and coplanar waveguide grounds exists a
low impedance path through the bended membrane. The RF signal will be
reflected by the switch.
The resonant frequency of 23.4 GHz was observed when the membrane
was in the down position. This means that the switch can be equivalently
modeled as a capacitor, inductor and resistor connected in series between the
signal and ground lines. Since the switch has a better isolation around the
resonant frequency, it can be designed such that the desired frequency overlaps
with the resonant frequency by adjusting the geometry of the switch.
The actuation voltage of the MEMS switch is about 50V. The spring
constant of the membrane and the distance between the membrane and the
bottom electrode determines the actuation voltage of the switch. The spring
constant of the membrane is mainly determined by the membrane material
properties, the membrane geometry, and the residual stress in the membrane.
PRODUCTIONAND MANUFACTURING ISSUES
Packaging
The primary production issue at this time is the lack of low-cost packaging
options. The hermeticity requirement for RF MEMS switch packaging leaves
only high-cost, military- or space-grade traditional packaging methods as
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MEMS Switches Seminar Report ‘03
appropriate for high reliability assurance. Expensive packaging precludes the
large-scale production needed for extensive reliability testing and the low risk
statistics for widespread commercial sales.
Beyond the design and production phases, reliability concerns can be
introduced in post-production (such as release stiction fails) and, most
importantly, in packaging. Several factors must be considered before choosing a
package for RF MEMS switches. First and foremost, RF MEMS performance
will quickly degrade in the presence of contaminants and humidity. Therefore,
the initial package criterion is hermeticity.
A traditional approach would involve dicing the wafer, releasing the
device, attaching the substrate to the package base, and attaching the lid with a
hermetic seal, incorporating baking and vacuum conditions as necessary to
ensure no outgassing after seal. With the many options available for
microelectronics packaging, a suitable hermetic package can be found that
minimizes thermal-mismatch induced stresses and provides low-loss RF
electrical connections. Although it is possible to successfully package MEMS
RF switches in this manner, it is impractical for two reasons: it’s prohibitively
expensive for large-scale production and manipulating released devices is
tedious. In response to these difficulties, the current trend is toward wafer-level
packaging, which reduces cost and mitigates the structural fragility by bonding
the package around the released switch in the production phase, before dicing
and subsequent handling. Wafer-level packaging for RF MEMS is a topic of
intense study. Work is currently underway to find a suitable bonding method
that provides adequate hermetic seal without outgassing contaminants into the
body of the package or thermally damaging the delicate MEMS structures.
Available Vendors
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MEMS Switches Seminar Report ‘03
Significant manufacturing hurdles have the following repercussions for
spacecraft systems MEMS technology insertion. First, there are few available
vendors and limited in-stock product. Second, and most importantly, much
reliability testing remains to be completed and what has been done isn’t widely
available due to commercial proprietary concerns. For space flight applications,
this means that if one can find switches to purchase, the knowledge of their
physics of failure and, consequently, the ability to predict what conditions may
trigger them, is severely compromised. In-house performance characterization
and reliability testing, and the resulting database of MEMS RF switch failure
mechanisms, will enable accelerated MEMS technology insertion.
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MEMS Switches Seminar Report ‘03
GENERAL RELIABILITY CONCERNS
Metal Contact Resistance (Series Contact Switches)
Series contact switches tend to fail in the open circuit state with wear.
Even though the bridge is collapsing and making contact with the transmission
line, the conductivity of the contact metallization area decreases until
unacceptable levels of power loss are achieved. These out-of-spec increases in
resistivity of the metal contact layer over cycling time may be attributed to
frictional wear, pitting, hardening, non-conductive skin formation, and/or
contamination of the metal. Pitting and hardening can be reduced by decreasing
the contact force during actuation. But tailoring the design to minimize the effect
involves balancing operational conditions (contact force, current, and
temperature), plastic deformation properties, metal deposition method, and
switch mechanical design. In other cases, the resistivity of the contact increases
with use due to the formation of a thin dielectric layer on the surface of the metal.
While this has been documented, the underlying physical mechanisms are not
currently well understood. As the RF power level is raised above 100 mW, the
aforementioned failures are exacerbated by the increased temperature at the
contact area and, under hot-switching conditions, arcing and microwelding
between the metal layers.
Dielectric Breakdown (Shunt Capacitive Switches)
Shunt capacitive switches often fail due to charge trapping, both at the
surface and in the bulk states of the dielectric. Surface charge transfer from the
beam to the dielectric surface results in the bridge getting stuck in the up position
(increased actuation voltage). Bulk charge trapping, on the other hand, creates
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MEMS Switches Seminar Report ‘03
image charges in the bridge metallization and increases the holding force of the
bridge to a value above its spring restoring force. There are several actions that
can be taken to mitigate dielectric charging in the design phase, including
choosing better dielectric material and designing peripheral pull-down electrodes
to decouple the actuation from the dielectric behavior at the contact. Unlike
series contact switches, capacitive shunt switches do not experience hard failures
at RF power levels > 100 mW, as long as the bridge contact metallization is thick
enough to handle the high current densities. However, RF power may be limited
in some cases by a recoverable failure, self-actuation. While not yet fully
understood, it has been observed that a capacitive shunt switch will self-actuate
at 4W of RF power (cold-switching failure) and experience latch-up (stuck in
down position) in hot-switching mode at 500 mW. Even though these “failures”
are recoverable – the switch operates normally if the RF power is decreased
below the latch-up value of 500 mW – they still illustrate a lifetime consideration
for high power applications.
Radiation and Other Effects
There are some areas of RF MEMS reliability research that have not been
investigated in detail and are in need of immediate attention. For example, RF
MEMS series contact switches were thought to be immune to radiation effects
until JPL’s total dose gamma irradiation experiments on the RSC MEMS contact
switch showed design-dependent charge separation effects in the pull-down
electrode dielectric material, which noticeably decreased the actuation voltage of
the device. This immediately begs the question of how radiation effects will
accelerate the dielectric material failure mechanisms of capacitive switches,
which have known dielectric failure mechanisms, or other series switches that
utilize dielectric material in their electrode structures.
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MEMS Switches Seminar Report ‘03
Power Handling
As outlined above, reliable operation of RF MEMS switches at power
levels above 500 mW cannot be guaranteed at this time. Capacitive shunt
switches experience recoverable failures at this level, while series contact
switches may permanently fail in the short circuit configuration if hot switched
above 100 mW. Hot-switching series contact switches at any power is not
recommended. Thermal dissipation precautions in packaging are unnecessary, as
RF MEMS do not generate sufficient thermal energy.
Technology evolution in near term
The fundamental architecture for RF MEMS switches, both contact series
and capacitive shunt, is stable and likely to persist through commercial insertion.
Design subtleties will be adjusted to optimize performance (i.e. more robust
metal contact) and increase reliability, but will likely be considered revisions
rather than a new design. Since there is no set packaging method, the end-
product has yet to be fully realized.
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MEMS Switches Seminar Report ‘03
COMPARISION OF MEMS SWITCHES WITH SOLID
STATE SWITCHES
RF switches are used in a wide array of commercial, aerospace, and
defense application areas, including satellite communications systems, wireless
communications systems, instrumentation, and radar systems. In order to choose
an appropriate RF switch for each of the above scenarios, one must first consider
the required performance specifications, such as frequency bandwidth, linearity,
power handling, power consumption, switching speed, signal level, and
allowable losses.
Traditional electromechanical switches, such as waveguide and coaxial
switches, show low insertion loss, high isolation, and good power handling
capabilities but are power-hungry, slow, and unreliable for long-life applications.
Current solid-state RF technologies (PIN diode- and FET- based) are utilized for
their high switching speeds, commercial availability, low cost, and ruggedness.
Their inherited technology maturity ensures a broad base of expertise across the
industry, spanning device design, fabrication, packaging, applications system
insertion and, consequently, high reliability and well-characterized performance
assurance. Some parameters, such as isolation, insertion loss, and power
handling, can be adjusted via device design to suit many application needs, but at
a performance cost elsewhere. For example, some commercially available RF
switches can support high power handling, but require large, massive packages
and high power consumption.
In spite of this design flexibility, two major areas of concern with solid-
state switches persist: breakdown of linearity and frequency bandwidth upper
limits. When operating at high RF power, nonlinear switch behavior leads to
spectral regrowth, which smears the energy outside of its allocated frequency
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MEMS Switches Seminar Report ‘03
band and causes adjacent channel power violations (jamming) as well as signal to
noise problems. The other strong driving mechanism for pursuing new RF
technologies is the fundamental degradation of insertion loss and isolation at
signal frequencies above 1-2 GHz.
By utilizing electromechanical architecture on a miniature- (or micro-)
scale, MEMS RF switches combine the advantages of traditional
electromechanical switches (low insertion loss, high isolation, extremely high
linearity) with those of solid-state switches (low power consumption, low mass,
long lifetime). shows a comparison of MEMS, PIN-diode and FET switch
parameters. While improvements in insertion loss (<0.2 dB), isolation (>40 dB),
linearity (third order intercept point>66 dBm), and frequency bandwidth (dc – 40
GHz) are remarkable, RF MEMS switches are slower and have lower power
handling capabilities. All of these advantages, together with the potential for
high reliability long lifetime operation make RF MEMS switches a promising
solution to existing low-power RF technology limitations.
PARAMETER RF MEMS PIN-DIODE FET
Voltage 20 – 80 3 – 5 3 – 5
Current (mA) 0 0 – 20 0
Power Consumption (mW) 0.5 – 1 5 – 100 -.5 – 0.1
Switching 1 – 300 s 1 – 100 ns 1 – 100 ns
Cup (series) (fF) 1 – 6 40 – 80 70 – 140
Rs (series) () 0.5 – 2 2 – 4 4 – 6
Capacitance Ratio 40 – 500 10 n/a
Cutoff Freq. (THz) 20 – 80 1 – 4 0.5 – 2
Isolation (1 – 10 GHz) Very high High Medium
Isolation (10 – 40 GHz) Very high Medium Low
Isolation (60 – 10 GHz) High Medium None
Loss (1 – 100 GHz) (dB) 0.05 – 0.2 0.3 – 1.2 0.4 – 2.5
Power Handling (W) <1 <10 <10
3rd order Int. (dBm) +66 – 80 +27 – 45 +27 - 45
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CONCLUSION
Low power consumption ,low insertion loss,high isolation,excellent
linearty and the ability to be integrated with other electronics all make MEMS
switches an attractive alternative to mechanical and solid state switches.these
switches will have applications in phase antenna arrays ,in MEMS impedance
matching networks,and in communications applications.
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REFERENCES
1. S.Majumdar,J.lampen,R.Morrison,andJ.Maciel,MEMS SWITCHES,IEE
instrumentation and measurement magazine,march 2003.
2. Gabriel M.Rebeiz,Hoboken,NJ,John Wiley &sons,RF MEMS
THEORY,DESIGN &TECHNOLOGY,January 2003.
3. Gopinath,A and Ranklin.JB,IEEE Transaction on electronic
development ,GaAs FET RF switches ,VOL ED-32.
4. Cavery.R.H,`DISTORTION OF OFF-STATE ARSENIDE MESFET
SWITCHES’,IEEE Transaction,VOL.41,NO.8,august 1993.
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CONTENTS
1. INTRODUCTION
2. RF MEMS TECHNOLOGY
3. RF SERIES CONTACT SWITCH
4. RF SHUNT CAPACITIVE SWITCH
5. SWITCH DESIGN AND OPERATIONS
6. FABRICATION
7. TEST RESULT AND DISCUSSIONS
8. PRODUCTION AND MANUFACTURING ISSUES
9. GENERAL RELIABILITY CONCERNS
10. COMPARISON OF MEMS SWITCHES WITH SOLID-STATE
SWITCHES
11. CONCLUSION
12. REFERENCES
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ACKNOWLEDGEMENT
I extend my sincere gratitude towards Prof . P.Sukumaran Head of
Department for giving us his invaluable knowledge and wonderful technical
guidance
I express my thanks to Mr. Muhammed kutty our group tutor and
also to our staff advisor Ms. Biji Paul for their kind co-operation and
guidance for preparing and presenting this seminar.
I also thank all the other faculty members of AEI department and my
friends for their help and support.
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MEMS Switches Seminar Report ‘03
ABSTRACT
Microelectromechanical system (MEMS) micro switches are receiving
increasing attention ,particularly in the RF community. Low power
consumption, low insertion loss, high isolation,excellent linearity, and the ability
to be integrated with other electronic circuits all make micro switches an
attractive alternative to other mechanical and solid state switches.
MEMS switches can be used in a variety of RF applications, including cell
phones, phase shifters, and smart antennas ,as well as in lower frequency
applications, such as automatic test equipment and industrial and medical
instrumentation. MEMS switches combine the advantages of traditional
electromechanical switches with those of solid state switches.
i
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