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BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, PILANI
First Semester 2015-2016
Microelectronics Circuits (EEE C 424/INSTR C 313)
QUIZ - 3 DATE: 4.02.2016
ID: Name: Section
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Q: For the circuit shown in the Figure below, find the transfer function = V o(s)/ Vs(s).
Provide the bode magnitude and phase plots.
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Birla Institute of Technology and Science Pilani (Rajasthan)
Department of Electrical and Electronics Engineering
EEE/INSTR F244 Microelectronic Circuits
Second Semester 2015-16
Date : 18/02/2016 Tutorial – 5
Use the following data whereever necessary. VDD=3.3V
VT0 (V) µ(cm2/V-s) λ (V
-1) Tox (nm) γ (V
0.5) |2ΦF| (V) η
NMOS 0.70 350 0.1 9 0.45 0.9 0.8
PMOS -0.80 100 0.2 9 0.40 0.8 0.8
1. Draw the Small signal low frequency eqvivalent circuit of a PMOS, NMOS .
2. Prove that the Gate-Drain Connected MOSFET acts in saturation region and its
equivalent resistance as seen from the drain terminal is
. (γ=0 , λ≠0)
3. For the circuit shown below calculate the small signal gain , output resistance
using small signal equivalent. (If not mentioned assume body of NMOS is connected to
ground while for PMOS to VDD) (γ=0 , λ≠0)
Figure 1 Question No.3
4. For a common source amplifier gain can be calculated using the relation below. Verify
this for the circuit in question no.3
***All The Best***
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