Mini-colloque«Latestadvancesinsemiconductornanostructures»
Organizingcommitee:ChristopheDurandEquipemixte«NanophysiqueetSemiconducteur»PHELIQS,INAC,CEA-Grenoble38000Grenoble,[email protected]
BenjaminDAMILANOCRHEA-CNRSRueBernardGregory06560Valbonne,[email protected]
CharlesCornetInstitutFOTONUMR6082CNRS-INSARennes35000Rennes,[email protected]
Over the last fifty years, the development of semiconductors has considerably progressed with theintegration of suchmaterials inmany daily-life applications (microelectronics, high power electronics,photonics, photodetectors, photovoltaics, etc.).Beyond themostpopular semiconductors, suchas Si formicroelectronics and GaN for lighting awarded in 2014 by the Physics Nobel Prize, many othersemiconductorsincludingtheIV,III-VandII-VIgroupsplaykeybuildingblocksforbothfundamentalandappliedresearch.Considerableeffortsarefocusedontheelaborationofsemiconductornanostructuresinordertoexplorenewphysicalpropertiesofsemiconductorswiththepossibilitiestosignificantlyimprovethecurrentdevicesortodevelopnewtypesofapplicationsinelectronicsandphotonics.Forinstance,thenanostructurescancontributetothedevelopmentofheterogeneousintegrationinmicroelectronics.TheFrenchresearchplaysakeyroleinthistopicwithintenseandrecentactivitiesfocusedonquantumwells(QWs),quantumdots(QDs)andnanowires(NWs)basedonIV,III-VandII-VIsemiconductors.Thissymposiumwillbefocusedonlastadvancesonsemiconductornanostructuresspanningfromgrowthtoadvancedstructuraloropticalproperties,andtheirimplementationindevices.Thegrowthmethodsintop-downorbottom-upapproachesallowinganaccuratecontrolofnanostructuresizeanddensityinself-assembledororganizedmodeswillbehighlighted.Theselectiveareagrowthisonepromisingapproachtogrowthorderednanostructurearray.Inparallel,advancedcharacterizationtechniquesmanagedeitheronnanostructureensemblesoronsinglenanostructuresatthenanoscaleareactuallydevelopedinorderto reveal growthmechanismsand togetdeep structural, optical andelectricalproperties (morphology,composition, strain state, emission/absorption, doping level…). The device integration of suchnanostructures represents an important challenge regarding electrical contact, performance andreliabilityissues.ThissymposiumrepresentsauniqueopportunitytobringtogetherseveralFrenchresearchcommunities(laboratoire d’excellence GANEX, GDR PULSE, former GDR Nanofils…) involved in the semiconductornanostructurestopresentup-to-dateadvancesgatheringbothfundamentalandappliedresearch.
ExamplesofsemiconductornanostructuresinformofQWs,NWsandQDs
forGaN/(In)AlNandZnTe/CdTesystems
