SINGLE CRYSTALSAPPHIREKYOCERA Corporation
Corporate Fine Ceramics Group6 Takeda Tobadono-cho, Fushimi-ku, Kyoto 612-8501, JapanTel: +81-(0)75-604-3441 Fax: +81-(0)75-604-3440
http://www.kyocera.co.jp
<U.S.A>KYOCERA Industrial Ceramics CorporationTX 11044 Research Blvd, SuiteA-430 Austin TX 78759 Tel: +1-512-336-1725 Fax: +1-512-336-8189MA 24 Prime Parkway Natick MA 01760 Tel: +1-508-651-3922 Fax: +1-508-650-0625IL 25 NW Point Blvd., #660 Elk Grove Village lL 60007 Tel: +1-847-981-9494 Fax: +1-847-981-9495NC 100 Industrial Prk. Rd. Mountain Home NC 28758 Tel: +1-828-693-0241 Fax: +1-828-692-1340NJ 220 Davidson Avenue, Suite 104 Somerset, NJ 08873 Tel: +1-732-563-4336 Fax: +1-732-627-9594CA 8611 Balboa Avenue San Diego, CA 92123 Tel: +1-858-614-2511 Fax: +1-858-715-0871CA 472 Kato Terrace Freemont, CA 94539 Tel: +1-510-257-0200 Fax: +1-510-257-0125WA 5713 East Fourth Plain Blvd. Vancouver WA 98661 Tel: +1-360-696-8950 Fax: +1-360-696-9804
<EUROPE>KYOCERA Fineceramics GmbHHammfeldamm 6 41460 Neuss, GermanyTel: +49-(0)2131-16370 Fax: +49-(0)2131-1637150
KYOCERA Fineceramics Ltd.Admiral House, Harlington Way, FLEET,Hampshire, GU13 8BB.Tel: +44-(0)1252-776000 Fax: +44-(0)1252-776010
KYOCERA Fineceramics S.A.S 1, Rue Corbusier, SILIC 326, F-94598 Rungis CEDEX, FranceTel: +33-(0)1-45120220 Fax: +33-(0)1-46860133
<ASIA>KYOCERA Asia Pacific, Ltd.Hong KongRoom 801-802, Tower 1, South Seas Centre, 75 Mody Road, Tsimshatsui East, Kowloon, Hong KongTel: +852-(0)2723-7183 Fax: +852-(0)2724-4501Singapore298 Tiong Bahru Road, #13-03/05 Central Plaza, Singapore 168730Tel: +65-6271-0500 Fax: +65-6271-0600Taiwan10FL.,No.66, Nanking West Road, Taipei, Taiwan,Tel: +886-(0)2-2555-3609 Fax: +886-(0)2-2559-4131/4123Thailand159 Serm-MIT Tower, 19th Floor, Sukhumvit 21 Road, Wattana, Bangkok 10110 Thailand. Tel: +66-(0)2 661-6400 Fax: +66-(0)2 661-6413
<CHINA>KYOCERA (TianJin) Sales&Trading CorporationShanghai Branch FineCeramic Sales DeptInformation Tower 11th Floor, 211 Century Avenue,Pudong New Area Shanghai P.R ChinaPost code;200120Tel: +86-(0)21-5877-5366 Fax: +86-(0)21-6876-4935
<KOREA>KYOCERA Korea Co., Ltd.Diplomatic Center Room#406, 1376-1, Seocho-2Dong,Seocho-Gu, Seoul, 137-072 KoreaTel: +82-2-3463-3538 Fax: +82-2-3463-3539
C 2007 KYOCERA CORPORATION006/002/0710
Printed in Japan006997
<JAPAN : Headquaters>
SINGLE CRYSTAL SAPPHIRESingle Crystal Sapphire is playing an ever-increasingly important role as a material for, high reliablility Electronics today due to its excellent mechanical characteristics, chemical stability and light transmission.
Kyocera mass-produces Single Crystal Sapphire in a vertically integrated manner. From "pulling up" the raw material with EFG (Edge-Defined Film-Fed Growth) methods to machining, Kyocera produces and supplies various products with large diameters or specific shape requirements.
Large Size MaterialSizing-up of materials allows for a broader range of applications and uses.
Production of Single Crystal Sapphire in Any Desired Sectional ShapeSince any desired sectional shape can be obtained in the form of ribbons, tubes, rods, and others, cutting processes can be eliminated, allowing for a reduction in cost.
Control of Crystal OrientationAny axis and plane can be produced by instituting proper control during crystal growth.
EFG Method
FEATURES OF EFG METHOD
FEATURES OF SINGLE CRYSTAL SAPPHIRE
Unit Cell of Sapphire
High Strength, High Rigidity, High Anti-Abrasion, High Anti-Heat, High Anti-Corrosion Characteristics, and High Anti-Plasma Characteristics.Because of these characteristics, Single Crystal Sapphire is widely used for precision mechanical parts.
Stable Dielectric Constant, Very Low Dielectric Loss, Good Electrical InsulationSingle Crystal Sapphire is used as a material for substrates in super-high frequency regions. It is also used as an insulation material and microwave window. Single Crystal Sapphire has become indispensable in the Electronics Industries.
Excellent Light TransmissionSingle Crystal Sapphire is used for various kinds of vacuum equipment, windows in reaction furnace, scanner windows and caps for optical communication due to its excellent mechanical characteristics and heat resistance.
Good Thermal Conductivity and High Heat ResistanceExcellent thermal conductivity at low temperatures allows Single Crystal Sapphire as a transparent material to be used in many diverse fields requiring thermal conduction and heat radiation.
Sapphire Ribbon Crystal
Die for Crystal Growth
Crucible
MeltSupply Slit
Alumina Melt
HeatingCoil
Pull-Up Direction
A plane
C plane
R plane
R plane(1102)A plane(1120)C plane(0001)
C Axis
a2
a1
a3
Typical Orientation
1 2
CONTENTS
FEATURES OF EFG METHOD ·········································P1
FEATURES OF SINGLE CRYSTAL SAPPHIRE ···················P2
SAPPHIRE MANUFACTURING PROCESS ·························P3
CHARACTERISTICS OF SINGLE CRYSTAL SAPPHIRE ·····P4
SAPPHIRE PRODUCTS ············································P5~P6
SINGLE CRYSTAL SAPPHIRESingle Crystal Sapphire is playing an ever-increasingly important role as a material for, high reliablility Electronics today due to its excellent mechanical characteristics, chemical stability and light transmission.
Kyocera mass-produces Single Crystal Sapphire in a vertically integrated manner. From "pulling up" the raw material with EFG (Edge-Defined Film-Fed Growth) methods to machining, Kyocera produces and supplies various products with large diameters or specific shape requirements.
Large Size MaterialSizing-up of materials allows for a broader range of applications and uses.
Production of Single Crystal Sapphire in Any Desired Sectional ShapeSince any desired sectional shape can be obtained in the form of ribbons, tubes, rods, and others, cutting processes can be eliminated, allowing for a reduction in cost.
Control of Crystal OrientationAny axis and plane can be produced by instituting proper control during crystal growth.
EFG Method
FEATURES OF EFG METHOD
FEATURES OF SINGLE CRYSTAL SAPPHIRE
Unit Cell of Sapphire
High Strength, High Rigidity, High Anti-Abrasion, High Anti-Heat, High Anti-Corrosion Characteristics, and High Anti-Plasma Characteristics.Because of these characteristics, Single Crystal Sapphire is widely used for precision mechanical parts.
Stable Dielectric Constant, Very Low Dielectric Loss, Good Electrical InsulationSingle Crystal Sapphire is used as a material for substrates in super-high frequency regions. It is also used as an insulation material and microwave window. Single Crystal Sapphire has become indispensable in the Electronics Industries.
Excellent Light TransmissionSingle Crystal Sapphire is used for various kinds of vacuum equipment, windows in reaction furnace, scanner windows and caps for optical communication due to its excellent mechanical characteristics and heat resistance.
Good Thermal Conductivity and High Heat ResistanceExcellent thermal conductivity at low temperatures allows Single Crystal Sapphire as a transparent material to be used in many diverse fields requiring thermal conduction and heat radiation.
Sapphire Ribbon Crystal
Die for Crystal Growth
Crucible
MeltSupply Slit
Alumina Melt
HeatingCoil
Pull-Up Direction
A plane
C plane
R plane
R plane(1102)A plane(1120)C plane(0001)
C Axis
a2
a1
a3
Typical Orientation
1 2
CONTENTS
FEATURES OF EFG METHOD ·········································P1
FEATURES OF SINGLE CRYSTAL SAPPHIRE ···················P2
SAPPHIRE MANUFACTURING PROCESS ·························P3
CHARACTERISTICS OF SINGLE CRYSTAL SAPPHIRE ·····P4
SAPPHIRE PRODUCTS ············································P5~P6
SAPPHIRE MANUFACTURING PROCESS
■Sapphire Manufacturing Process
Polishing
Growth of Raw Material
Grinding
Lapping
(Ra:≦1Å)
■Shape and Specifications
※Shapes other than above are available.
Substrate Rod
Width 200max.Leugth 300max.Thickness0.1~20
R plane ±2degA plane±2degC plane ±2deg
Diameter 0.5~20Length 1,000max.
C Axis inLongitudinalDirection
Tube
Inner Diameter 1.3~50Tube Thickness 0.25~5Length:1,000mm max.
C Axis inLongitudinalDirection
To be Customized
To be Customized
Others
■As-Grown Materials
Dimensions Crystal Orientation
Dimensions Crystal Orientation Dimensions Crystal Orientation
Dimensions Crystal Orientation
No=1.768
Ne=1.760
Refer to Fig.5
CHARACTERISTICS OF SINGLE CRYSTAL SAPPHIRE
■Characteristics of Kyocera's Single Crystal Sapphire
■Standard Dimensional ToleranceM
ech
anic
al C
har
acte
rist
ics
Compressive Strength
Young's Modulus
Poisson's Ratio
Hexagonal System a=4.763Å
c=13.003Å
Rhombohedral Single crystal
3.97×103kg/m3
22.5GPa(HV1(Load=9.807N))
690MPa
2250MPa
(Diameter0.25mm Filament 25℃)
2,940MPa
470GPa
0.18~0.29
Th
erm
al C
har
acte
rist
ics
Thermal Conductivity
Specific Heat
2,053℃
40~400℃ C parallel to Caxis 7.7×10-6/℃
40~400℃ 7.0×10-6/℃
20℃ 42W/(m・k)
0.75×103J/(kg・K)
<0.02
(λ=2.6~3.7μm880℃)
Ele
ctri
cal C
har
actd
rist
ics
Dielectric Constant
48×106V/m
20℃ >1014Ω・cm
500℃ 1011Ω・cm
C parallel to Caxis 11.5(1MHz)
9.3(1MHz)
<1(×10-4)(1MHz)
-(×10-4)
10-4 max.
Optica
l Chara
cterist
ics
※These figures are representative.※Each Crystal Orientation has different characteristics.
Index of Reflection
Optical Transmission
CrystallographicStructure
Reference Density
Flexural Strength
Vickers Hardness
Tensile Strength
Melting Point
Coefficient of LinearThermal Expansion
Emittance
Dielectric Loss Angle
Loss Factor
Dielectric Loss Tangent
-100 100 300 500 700 900 1100 1300 1500 17000
2.0
4.0
6.0
8.0
10.0
Parallel to C Axis
Parallel to C Axis
Perpendicular to C Axis
Perpeudiculat to C Axis
Coef
ficie
nt o
f Lin
ear T
herm
al E
xpan
sion(
10-
6 /K)
Ther
mal
Cou
duct
ivity(
W/m・
K)
100 300 500 700 900 1100 13008.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
Die
lect
ric C
onst
ant
102 103 104 105 106 107 108 109 10100
0.001
0.002
0.003
tanδ
Frequency(Hz)
100 300 500 700 900 1100 1300 1500 17000
10
20
30
40
50
0.15 0.2 0.3 0.4 0.6 1.00.8 1.50.5 2.0 3.0 4.0 6.05.00.10
20
40
60
80
100
Exte
rnal
Tra
nsm
issi
on(
%)
Wave Length(μm)Fig. 5 Transmission vs. Wave Length
Fig. 4 Dielectric Loss vs. FrequencyFig. 3 Dielectric Constant vs. Temperature
Fig. 1 Thermal Expansion vs. Temperature Fig. 2 Thermal Conductivity vs. Temperature
NOTE: •Transmittance range varies depending on thickness of Sapphire Products. •Interfacial Reflection included •Thickness 1mm.
190<a
1
Nominal Dimension:a
Tolerance(±)
●Machining accuracy: Tube 1.A.10.A.and standard tube thickness tolerance…±0.25. Hole diameter and standard pitch tolerance…±0.1
1>a
0.05
1≦a≦4
0.1
4<a≦25
0.2
25<a≦102
0.25
102<a≦190
0.5
Dielectric strength
Volume Resistance
(unit: mm)
(Unit:mm)
@589nm
3 4
Temperature( C)Temperature( C)
Temperature( C)
C perpendicularto Caxis
C perpendicularto Caxis
SAPPHIRE MANUFACTURING PROCESS
■Sapphire Manufacturing Process
Polishing
Growth of Raw Material
Grinding
Lapping
(Ra:≦1Å)
■Shape and Specifications
※Shapes other than above are available.
Substrate Rod
Width 200max.Leugth 300max.Thickness0.1~20
R plane ±2degA plane±2degC plane ±2deg
Diameter 0.5~20Length 1,000max.
C Axis inLongitudinalDirection
Tube
Inner Diameter 1.3~50Tube Thickness 0.25~5Length:1,000mm max.
C Axis inLongitudinalDirection
To be Customized
To be Customized
Others
■As-Grown Materials
Dimensions Crystal Orientation
Dimensions Crystal Orientation Dimensions Crystal Orientation
Dimensions Crystal Orientation
No=1.768
Ne=1.760
Refer to Fig.5
CHARACTERISTICS OF SINGLE CRYSTAL SAPPHIRE
■Characteristics of Kyocera's Single Crystal Sapphire
■Standard Dimensional Tolerance
Mec
han
ical
Ch
arac
teri
stic
s
Compressive Strength
Young's Modulus
Poisson's Ratio
Hexagonal System a=4.763Å
c=13.003Å
Rhombohedral Single crystal
3.97×103kg/m3
22.5GPa(HV1(Load=9.807N))
690MPa
2250MPa
(Diameter0.25mm Filament 25℃)
2,940MPa
470GPa
0.18~0.29
Th
erm
al C
har
acte
rist
ics
Thermal Conductivity
Specific Heat
2,053℃
40~400℃ C parallel to Caxis 7.7×10-6/℃
40~400℃ 7.0×10-6/℃
20℃ 42W/(m・k)
0.75×103J/(kg・K)
<0.02
(λ=2.6~3.7μm880℃)
Ele
ctri
cal C
har
actd
rist
ics
Dielectric Constant
48×106V/m
20℃ >1014Ω・cm
500℃ 1011Ω・cm
C parallel to Caxis 11.5(1MHz)
9.3(1MHz)
<1(×10-4)(1MHz)
-(×10-4)
10-4 max.
Optica
l Chara
cterist
ics
※These figures are representative.※Each Crystal Orientation has different characteristics.
Index of Reflection
Optical Transmission
CrystallographicStructure
Reference Density
Flexural Strength
Vickers Hardness
Tensile Strength
Melting Point
Coefficient of LinearThermal Expansion
Emittance
Dielectric Loss Angle
Loss Factor
Dielectric Loss Tangent
-100 100 300 500 700 900 1100 1300 1500 17000
2.0
4.0
6.0
8.0
10.0
Parallel to C Axis
Parallel to C Axis
Perpendicular to C Axis
Perpeudiculat to C Axis
Coef
ficie
nt o
f Lin
ear T
herm
al E
xpan
sion(
10-
6 /K)
Ther
mal
Cou
duct
ivity(
W/m・
K)
100 300 500 700 900 1100 13008.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0D
iele
ctric
Con
stan
t
102 103 104 105 106 107 108 109 10100
0.001
0.002
0.003
tanδ
Frequency(Hz)
100 300 500 700 900 1100 1300 1500 17000
10
20
30
40
50
0.15 0.2 0.3 0.4 0.6 1.00.8 1.50.5 2.0 3.0 4.0 6.05.00.10
20
40
60
80
100
Exte
rnal
Tra
nsm
issi
on(
%)
Wave Length(μm)Fig. 5 Transmission vs. Wave Length
Fig. 4 Dielectric Loss vs. FrequencyFig. 3 Dielectric Constant vs. Temperature
Fig. 1 Thermal Expansion vs. Temperature Fig. 2 Thermal Conductivity vs. Temperature
NOTE: •Transmittance range varies depending on thickness of Sapphire Products. •Interfacial Reflection included •Thickness 1mm.
190<a
1
Nominal Dimension:a
Tolerance(±)
●Machining accuracy: Tube 1.A.10.A.and standard tube thickness tolerance…±0.25. Hole diameter and standard pitch tolerance…±0.1
1>a
0.05
1≦a≦4
0.1
4<a≦25
0.2
25<a≦102
0.25
102<a≦190
0.5
Dielectric strength
Volume Resistance
(unit: mm)
(Unit:mm)
@589nm
3 4
Temperature( C)Temperature( C)
Temperature( C)
C perpendicularto Caxis
C perpendicularto Caxis
SAPPHIRE PRODUCTS
■Substrate●Application (1)High Brightness LED
(2)HB-LED Semiconductor, Piezoelectric Semiconductor, Superconductor,
Thin Film Substrate.
(3)MR Sensor, Precision Resistor
(4)Optical Devices
(5)Thin Film HIC
●2"-8" substrate for Optical Devices ●Selected Transmission Layer for Wave Length Optical Transmission ●AR Coat External Transmission
■Semiconductor Process Equipment Parts
Size O.F. Length
8″φ200±0.25×0.725±0.05 55~60
6″φ150±0.25×0.625±0.05 45~50
5″φ125±0.25×0.625±0.05 40~45
4″φ100±0.25×0.53 ±0.05 30~35
3″φ76.2±0.25×0.43±0.05 19~25
2″φ50.8±0.25×0.33±0.05 13~19
■Optical Products for LCD Projectors
※Characteristic values are subjected to change due to each specs or conditions.
■Optical Products ■Others
●Standard Dimension and Tolerance ●Application Examples
●Single Crystal Sapphire is widely used substrate material for
blue, green, ultraviolet and white LEDs. It has excellent
features as a base substrate for GaN deposition and great
mass-productivity. In addition, it can meet future larger-size
demand.
●Application (1)Carrier Plate (2)Microwave Entrance Tube (3)Dummy Water (4)Handling Arm (5)Vacuum Chuck (6)Window
●It is used as various Semiconductor Process Equipment due to its high anti-plasma and high anti-heat characteristics.
●Single Crystal Sapphire is used as a base substrate in thin film
deposition because of its lattice alignment match with a variety
of semiconductor materials combined with excellent thermal
and chemical stability.
●Application(1)Sapphire Plate
・Polarizing Film Attached
・Holder Assembled
・Dichroic Filter
(2)LCD Projector
Dust Control Plate
●Sapphire material realizes high brightness and high picture
quality for LCD projectors due to its high thermal
conductivity and optical properties.
●Coating such as Dichroic Filter, to prevent reflection
features is available.
●Standard sizes to fit in various LCD panels are available.
400 450 500 550 600 650 700 750 800
Wave length(nm)
0
20
40
60
80
100
Transmission(%)
Red
GreenBlue
400 425 450 475 500 525 550 575 600 625 650 675 700
Wave length(nm)
80
85
90
95
100Transmission(%)
Non coating
Both-sidesAR coating
One-side AR coating
(475nm Target)
Multicoating
※Specifications other than above are available.※Available sizes are dependent on a crystal orientation.
Sizes and tolerances other than the above table are also available under customer requirements. Please contact or send your requirements to Kyocera.
●Application (1)POS Scanner Window (SOG) (2)Window (3)Cap for Optical Communication (4)Infrared Measuring Device Window (5)Coin Sensor
(6)Lamp External Tube High Pressure Sodium, Xenon, Ultra Pressure mercury Metallic Halide (7)Light Receiving Window Accelerating Tube
●Application (1)Fiber Bar Guide (2)Insulating Plate and Rod (3)Single Crystal Material Sheel Holder (4)Biomaterial (BIOCERAMR ) (5)Watch Window (6)NMR Protection Tube
(7)Thermocouple Protection Tube (8)HDC Resonator Rod
JP Patent No. 3091183, No.3443549 U.S. Patent No. 6577375, No.6642989
(1)
(3) (4)
(2)
5 6
SAPPHIRE PRODUCTS
■Substrate●Application (1)High Brightness LED
(2)HB-LED Semiconductor, Piezoelectric Semiconductor, Superconductor,
Thin Film Substrate.
(3)MR Sensor, Precision Resistor
(4)Optical Devices
(5)Thin Film HIC
●2"-8" substrate for Optical Devices ●Selected Transmission Layer for Wave Length Optical Transmission ●AR Coat External Transmission
■Semiconductor Process Equipment Parts
Size O.F. Length
8″φ200±0.25×0.725±0.05 55~60
6″φ150±0.25×0.625±0.05 45~50
5″φ125±0.25×0.625±0.05 40~45
4″φ100±0.25×0.53 ±0.05 30~35
3″φ76.2±0.25×0.43±0.05 19~25
2″φ50.8±0.25×0.33±0.05 13~19
■Optical Products for LCD Projectors
※Characteristic values are subjected to change due to each specs or conditions.
■Optical Products ■Others
●Standard Dimension and Tolerance ●Application Examples
●Single Crystal Sapphire is widely used substrate material for
blue, green, ultraviolet and white LEDs. It has excellent
features as a base substrate for GaN deposition and great
mass-productivity. In addition, it can meet future larger-size
demand.
●Application (1)Carrier Plate (2)Microwave Entrance Tube (3)Dummy Water (4)Handling Arm (5)Vacuum Chuck (6)Window
●It is used as various Semiconductor Process Equipment due to its high anti-plasma and high anti-heat characteristics.
●Single Crystal Sapphire is used as a base substrate in thin film
deposition because of its lattice alignment match with a variety
of semiconductor materials combined with excellent thermal
and chemical stability.
●Application(1)Sapphire Plate
・Polarizing Film Attached
・Holder Assembled
・Dichroic Filter
(2)LCD Projector
Dust Control Plate
●Sapphire material realizes high brightness and high picture
quality for LCD projectors due to its high thermal
conductivity and optical properties.
●Coating such as Dichroic Filter, to prevent reflection
features is available.
●Standard sizes to fit in various LCD panels are available.
400 450 500 550 600 650 700 750 800
Wave length(nm)
0
20
40
60
80
100
Transmission(%)
Red
GreenBlue
400 425 450 475 500 525 550 575 600 625 650 675 700
Wave length(nm)
80
85
90
95
100Transmission(%)
Non coating
Both-sidesAR coating
One-side AR coating
(475nm Target)
Multicoating
※Specifications other than above are available.※Available sizes are dependent on a crystal orientation.
Sizes and tolerances other than the above table are also available under customer requirements. Please contact or send your requirements to Kyocera.
●Application (1)POS Scanner Window (SOG) (2)Window (3)Cap for Optical Communication (4)Infrared Measuring Device Window (5)Coin Sensor
(6)Lamp External Tube High Pressure Sodium, Xenon, Ultra Pressure mercury Metallic Halide (7)Light Receiving Window Accelerating Tube
●Application (1)Fiber Bar Guide (2)Insulating Plate and Rod (3)Single Crystal Material Sheel Holder (4)Biomaterial (BIOCERAMR ) (5)Watch Window (6)NMR Protection Tube
(7)Thermocouple Protection Tube (8)HDC Resonator Rod
JP Patent No. 3091183, No.3443549 U.S. Patent No. 6577375, No.6642989
(1)
(3) (4)
(2)
5 6
SINGLE CRYSTALSAPPHIRE
SINGLE CRYSTALSAPPHIRE
Duplication or reproduction of any part of thisbrochure without approval is prohibited.
© 2018 KYOCERA CORPORATION006/013/1804
Printed in Japan
The contents of this catalog are subject to change without prior notice for further improvement.
Application and usage conditions should be consulted upon when considering purchase.
<U.S.A.>KYOCERA International, Inc.
San Jose, CA49070 Milmont Dr. Fremont, CA 94538 Tel:+1-510-257-0200 Fax:+1-510-257-0125
San Diego, CA8611 Balboa Avenue, San Diego, CA 92123Tel:+1-858-614-2520 Fax:+1-858-715-0871
Chicago, IL25 NW Point Blvd., #660 Elk Grove Village, lL 60007Tel:+1-847-981-9494 Fax:+1-847-981-9495
Boston, MA24 Superior Dr, Suite 106, Natick, MA 01760Tel: +1-508-651-8161 Fax: +1-508-655-9139
Mountain Home, NC100 Industrial Park Rd, Hendersonville, NC 28792Tel:+1-828-693-8244 Fax:+1-828-692-1340
New Jersey, NJ220 Davidson Ave., Suite108, Somerset, NJ 08873Tel:+1-732-563-4336 Fax:+1-732-627-9594
Austin, TX7801 Capital of Texas Highway, Ste 330 Austin, TX 78731Tel:+1-512-336-1725 Fax:+1-512-336-8189
Vancouver, WA5713 East Fourth Plain Blvd.,Vancouver ,WA 98661Tel:+1-360-696-8950 Fax:+1-360-696-9804
<EUROPE>KYOCERA Fineceramics GmbH
Esslingen, GermanyFritz-Mueller-Strasse 27, 73730 Esslingen, GermanyTel:+49-(0)711-93934-0 Fax:+49-(0)711-93934-950
Neuss, GermanyHammfelddamm 6 41460 Neuss, GermanyTel:+49-(0)2131-1637-0 Fax:+49-(0)2131-1637-150
KYOCERA Fineceramics Ltd.U.K.
Prospect House, Archipelago, Lyon Way, Frimley, Surrey GU16 7ER, U.K. Tel:+44-(0)1276-6934-50 Fax:+44-(0)1276-6934-60
KYOCERA Fineceramics S.A.S.France
Parc Tertiaire, Silic, 21 Rue De VilleneuveBP 90439 94583 Rungis Cedex, FranceTel:+33-(0)141-7373-30 Fax:+33-(0)141-7373-59
<ASIA>KYOCERA Korea Co.,Ltd.
Korea13F KAMCO Tangjae Tower, 262 Kangnamdae-roKangnam-gu, Seoul, 06265Tel: +82-(0)2-3463-3538 Fax: + 82-(0)2-3463-3539
KYOCERA (China) Sales & Trading Corporation Shanghai
Floor 9,Dushi Headquarters Building, No. 168, Middle Xizang Road, Shanghai, 200001Tel: +86-(0)21-5877-5366 Fax: +86-(0)21-5888-5096
ShenzenUnit 06-08,29/F,AVIC Center NO.1018 Huafu Road,Futian District, Shenzhen, Guangdong, 518033Tel: +86-(0)755-8272-4107 Fax: +86-(0)755-8279-0487
KYOCERA (Hong Kong) Sales & Trading Ltd.Hong Kong
Room 801-802, Tower 1, South Seas Centre,75 Mody Road, Tsimshatsui East, Kowloon, Hong KongTel: +852-(0)2722-3912 Fax : +852-(0)2724-4501
KYOCERA Asia Pacific,Ltd.Taiwan
8FL., No.101, Sec.2, Nanjing East Road, Taipei 10457, TaiwanTel:+886-(0)2-2567-2008 Fax:+886-(0)2-2567-2700
Singapore298 Tiong Bahru Road, #13-03/05 Central Plaza, 168730, SingaporeTel:+65-6271-0500 Fax:+65-6271-0600
Philippines11B, Kingston Tower, Block 2, Lot 1, Acacia Avenue,Madrigal Business Park, Alabang, Muntinlupa City 1780, PhilippinesTel:+63-(0)2-771-0618 Fax:+63-(0)2-775-0532
KYOCERA Asia Pacific (Thailand) Co., Ltd.Thailand
1 Capital Work Place, Building 7th Floor, Soi Chamchan, Sukhumvit 55 Road, Klongton Nua, Wattana, Bangkok 10110, Thailand. Tel: +66-(0)2030-6688 Fax: +66-(0)2030-6600
KYOCERA Sdn. Bhd.Malaysia
Lot 4A, Lower Level 3, Hotel Equatrial, Penang No.1,Jalan Bukit Jambul 11900 Penang, MalaysiaTel: +60-4-641-4190 Fax: +60-4-641-4209
KYOCERA Asia Pacific India Pvt. Ltd.India
1004A & 1004B, 10th Floor, JMD Regent Square, M.G. Road Gurugram Haryana, IndiaTel: +91-124-4714298 Fax: +91-124-4683378