×
+ All Categories
Log in
English
Français
Español
Deutsch
Report -
Growth and Device Performance of AlGaN/GaN ...AlGaN grade layer Undoped-GaN Source DrainGate Pad Pad Pad 2DEG AlSiC Si substrate ∼2𝜇m Al xGa 1−x (∼20nm) GaN: ∼0.1𝜇m AlGaN
Name
Email
Select
Select
Pornographic
Defamatory
Illegal/Unlawful
Spam
Other Terms Of Service Violation
File a copyright complaint
Message
Please pass captcha verification before submit form