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SSM INSTITUTE OF ENGINEERING AND TECHNOLOGYSindalagundu Post, Dindigul – !" ##!, Ta$ilnaduP%& #"'()
!""**##
DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING
COURSE FILE
SU+ECT CODE - NAME & GE!'! - +ASIC ELECTRICAL AND ELECTRONICSENGG
YEAR - SEMESTER & Ist ./a0 – IInd S/$/st/0
+RANCH & Ci1il Engin//0ing
STAFF INCHARGE & T2A0ul3u$a0
ACADEMIC YEAR & !#(')!#(
S2No2 INDE4 REMAR5S
1. Syllabus
2. Time Table
3. Nominal Roll
4. Lesson Plan
5. Lecture Notes / Course content (Unit!ise"
#. T!o mar$ %uestions !it& ans!ers (minimum 1' er unit"
). List o* 1# / + mar$s %uestions (minimum 5 / 1' er unit"
+. Pre,ious year uni,ersity %uestion aers (minimum 5 latest sets"-. Class test %uestion aers !it& mar$ s&eet
1'. nternal test %uestion aers !it& mar$ s&eet
11. List o* !ea$ stuents an action ta$en reort *or eac& test
12. nternal mar$ o* t&e stuents
13. Current semester uni,ersity %uestion aer !it& ans!er $ey
14. 0eebac$ *orm o* t&e current semester %uestion aer
15. List o* %uestions as$e in t&e uni,ersity eam t&at are a,ailable in
t&e reare %uestion ban$
FACULTY HOD
PRINCIPAL
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GE6252 BASIC ELECTRICAL AND ELECTRONICS ENGINEERING L T P C 4 0
0 4
UNIT I ELECTRICAL CIRCUITS & MEASURMENTS
(12)
Ohm s Law – Kirchoff s Laws – Steady State Solution of DC Circuits – Introduction to AC Circuits –‟ ‟
Waveforms and RMS alue – !ower and !ower factor – Sin"le !hase and #hree !hase $alanced
Circuits% O&eratin" !rinci&les of Movin" Coil and Movin" Iron Instruments 'Ammeters and oltmeters()
Dynamometer ty&e Watt meters and *ner"y meters%
UNIT II ELECTRICAL MECHANICS
(12)
Construction) !rinci&le of O&eration) $asic *+uations and A&&lications of DC ,enerators) DC Motors)Sin"le !hase #ransformer) sin"le &hase induction Motor%
UNIT III SEMICONDUCTOR DEVICES AND APPLICATIONS
(12)
Characteristics of !- .unction Diode – /ener *ffect – /ener Diode and its Characteristics – 0alf wave
and 1ull wave Rectifiers – olta"e Re"ulation% $i&olar .unction #ransistor – C$) C*) CC Confi"urations
and Characteristics – *lementary #reatment of Small Si"nal Am&lifier%
UNIT IV DIGITAL ELECTRONICS
( 12)
$inary -um2er System – Lo"ic ,ates – $oolean Al"e2ra – 0alf and 1ull Adders – 1li&31lo&s – Re"isters
and Counters – A4D and D4A Conversion 'sin"le conce&ts(
UNIT V FUNDAMENTALS OF COMMUNICATION ENGINEERING
(12)
#y&es of Si"nals5 Analo" and Di"ital Si"nals – Modulation and Demodulation5 !rinci&les of Am&litude and
1re+uency Modulations% Communication Systems5 Radio) #) 1a6) Microwave) Satellite and O&tical 1i2re
'$loc7 Dia"ram A&&roach only(%
TOTAL: 60 PERIODS
TEXT BOOS:
8% Mittle -%) 9$asic *lectrical *n"ineerin":) #ata Mc,raw 0ill *dition) -ew Delhi) 8;; Co%) =
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UNIT III SEMICONDUCTOR DE;ICES AND APPLICATIONS
1- C&aracteristics o* PN ;unction ioe T2R3 2
2'=al* !a,e recti*iers T2R3 1
210ull !a,e recti*iers T2R3 1
22>ener e**ect T2R3 1
23 >ener ioe an its c&aracterstics T2R3 1
24 ?olta:e re:ulation T2R3 125
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UNIT I – ELECTRICAL CIRCUITS AND MEASUREMENTS
PART A
(2 D/9in/ A7ti1/ - Passi1/ /l/$/nts2
T&e element !&ic& is caable o* :eneratin: or sulyin: ener:y is calle 7cti,e element.
AamleB enerators
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2R G A2/R 8atts. Aner:y is t&e rouct o* o!er an time. * t&e o!er remains constant atP urin: t&e erio o* time t secons t&e ener:y e%uals Pt 8attsec or @oules. Aner:y 8 G PtG At G 2Rt G A2t/R @oules.
*2 D/9in/ RMS 1alu/ o9 an a7 1oltag/ signal2@un/ !#(( @D/7 !#(! @D/7 !#( G R F ;(H L HC" o&m. n t&e abo,e
e%uation i* HL G HC t&en > G R. i.e. t&e circuit acts as a ure resisti,e circuit. T&e total currentra!n by t&e circuit is in &ase !it& t&e alie ,olta:e t&e o!er *actor !ill t&en be unity.T&is occurrence is calle as series resonance.(
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7ny ot&er tye o* !a,e*orm can be resol,e into a series o* sine or cosine !a,es o* *unamental an &i:&er *re%uencies sum o* all t&ese !a,es :i,es t&e ori:inal !a,e*orm.=ence it is al!ays better to &a,e sinusoial !a,e*orm as t&e stanar !a,e*orm.
!#2%at do .ou $/ant 8. 8alan7/d load in
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UNIT II – ELECTRICAL MACHINES
PART)A
(2 %at is t%/ 60in7i6l/ o9 o6/0ation o9 DC g/n/0ato0
8&en a coil rotates in a ma:netic *iel t&e *lu lin$e !it& t&e coil c&an:es. =ence an em* is
inuce in t&e coil !&ic& is roortional to t&e rate o* c&an:e o* *lu lin$a:e.
!2 %at is t%/ 60in7i6l/ o9 o6/0ation o9 DC Moto0 @DEC !#(
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(#2 E?6lain t%/ 9un7tion o9 Co$$utato0 in DC G/n/0ato0 and DC $oto02
Commutator acts as a mec&anical recti*ier. n enerator it con,erts 7C (inuce in armatureconuctors" into 6C (in t&e eternal loa".n 9otor its *unction is to rouce uniirectionaltor%ue in t&e armature.
((2 E?6lain t%/ 9un7tion o9 80us%/s in DC g/n/0ato0 and DC $oto02
T&e rotatin: armature an eternal circuit are connecte t&rou:& brus&es. n 6C :enerators
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UNIT III S/$i7ondu7to0 D/1i7/s and A66li7ations
PART A
1 D/9in/ S/$i7ondu7to0s. Semiconuctors are materials !&ose conuctin: roerties lies bet!een conuctors an
insulators. T&ese materials are searate by a small ener:y :a (G1e,".ermanium an Silicon
are commonly use semiconuctors.
2 D/9in/& 1al/n7/ 8and, 7ondu7tion 8and2
T&e ran:e o* ener:ies ossesse by ,alence electrons is calle ,alence ban. T&e
ran:e o* ener:ies ossesse by conuction electrons is calle conuction ban.
T&e *ree electrons !&ic& are le*t in t&e ,alence ban are occuyin: t&e
conuction ban.
3 D/9in/& 9o08idd/n /n/0g. ga6
T&e ener:y :a bet!een t&e ,alence ban an conuction ban is e*ine as *orbien ener:y
:a. 0or insulators. it is aroun #e, *or semiconuctors its ,alue is comarati,ely lo!.
ermanium &as ener:y
:a '.) e? an silicon &as 1.1 e?. 0or conuctors since conuction an ,alence bans are
o,erlain: t&e ener:y :a is Dero.
4 %at is int0insi7 s/$i7ondu7to0
ntrinsic semiconuctors are ure *orm o* semiconuctors. T&e conucti,ity o* a
semiconuctor lies bet!een an insulator an a conuctor. 7s temerature increases t&e
conucti,ity o* t&e semiconuctor also increases. Semiconuctors &a,e ne:ati,e temerature
coe**icient o* resistance
5 D/9in/& /?t0insi7 s/$i7ondu7to0
T&e electrical conucti,ity o* ure semiconuctor can be increase by ain: some imurity
into it. T&e resultin: semiconuctor is calle etrinsic semiconuctor.
# %at is $/ant 8. N)t.6/ and P)t.6/ s/$i7ondu7to0
8&en a small amount o* imurity (e:. 7ntimony 7rsenic" is ae to a ure semiconuctor
crystal t&e resultin: etrinsic semiconuctor is Ntye semiconuctor. * tri,alent imurity(e:. nium allium" is ae to a ure semiconuctor t&en t&e resultin: etrinsic
semiconuctor is $no!n as Ptye semiconuctor.
) %at is do6ing
T&e rocess o* ain: imurity to ure semiconuctor is $no!n as oin:. 7s a result o* it
t&e c&aracteristics o* semiconuctor is c&an:e an &ence t&e conucti,ity increases.
+ %at a0/ dono0 and a77/6to0 i$6u0iti/s
Penta,alent imurities (7ntimony 7rsenic" &a,e *i,e ,alence electrons. T&ey can onate one
ecess electron to a;acent atoms to comlete lattice structureJ t&ere*ore t&ey are calle onor
imurities. Tri,alent imurities (nium allium" &a,e t&ree ,alence electrons. T&ey &a,etenency to accet one electron *rom a;acent atoms to comlete lattice structure t&ere*ore
t&ey are $no!n as accetor imurities
-.. D/9in/ t%/ di99/0/nt o6/0ating 0/gions o9 t0ansisto02
A7ti1/ 0/gionB t is e*ine in !&ic& transistor collector ;unction is biase in re,erseirection an emitter ;unction in *or!ar irection.
Cuto99 0/gion& T&e re:ion in !&ic& t&e collector an emitter ;unctions are bot&
re,ersebiase Satu0ation 0/gion& T&e re:ion in !&ic& bot& t&e collector an emitter
;unctions are *or!ar biase.
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1'. D/9in/& +as/ :idt% $odulation @Ea0l. /99/7t
n a C< con*i:uration an increase in collector ,olta:e increases t&e !it& o* t&e eletion
re:ion at t&e outut ;unction ioe. T&is !ill ecrease t&e e**ecti,e !it& o* t&e base. T&is is
$no!n as early e**ect. 6ue to t&is e**ect recombination rate reuces at t&e base re:ion anc&ar:e :raient is increase !it&in t&e base.
11. E?6lain t%/ signi9i7an7/ o9 +as/ :idt% $odulation @Ea0l. /99/7t
t reuces t&e c&ar:es recombination o* electrons !it& &oles in t&e base re:ionJ &ence t&e current
:ain increases !it& t&e increase in collector base ,olta:e. T&e c&ar:e :raient is increase !it&in
baseJ &ence t&e current ue to minority carriers in;ecte across emitter ;unction increases.12.. %at a0/ t%/ t%0// t.6/s o9 t0ansisto0 7on9igu0ationCommon base
con*i:uration Common
emitter con*i:uration
Common collector
con*i:uration
13.. A$ong C+, CE, CC :%i7% is $ost i$6o0tant
T&e CA con*i:uration is imortant. T&e reasons
i" =i:& current :ain
ii" utut to inut imeance ratio is moerate t&ere*ore easy coulin: is ossible
bet!een ,arious transistor sta:esiii" t *ins ecellent usa:e in auio *re%uency alications &ence use in recei,ers an
transmitters. Co$6a0/ t%/ 6/09o0$an7/ o9 CE, C+, CC
Pa0a$/t/0s C+ CE CCCurrent :ain (7i" Lo! =i:& =i:&?olta:e :ain (?i" =i:& =i:& Lo!nut resistance (R i" Lo! 9eium =i:&utut resistance (R o" =i:& 9eium Lo!
14. %at is /n/0 80/a3do:n
8&en a PN ;unction is &ea,ily oe t&e eletion re:ion is ,ery narro!. Souner re,erse bias conition t&e electric *iel across t&e eletion layer is ,eryintense. Alectric *iel is ,olta:e er istance an ue to narro! eletion
re:ion an &i:& re,erse ,olta:e it is intense. Suc& an intense *iel is enou:& to
ull t&e electrons out o* t&e ,alence bans o* t&e stable atoms. So t&is is not
ue to t&e collision o* carriers !it& atoms. Suc& a creation o* *ree electrons iscalle >ener e**ect !&ic& is i**erent t&at t&e a,alanc&e e**ect. T&ese minority
carriers constitute ,ery lar:e current an mec&anism is calle >ener
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1).. Co$6a0/ t%/ 6/09o0$an7/ anal.sis o9 HR,FR@C/nt0/ ta66/d - 80idg/ 0/7ti9i/0
P/09o0$an7/ 9a7to0s HR FR @+0idg/ FR @C/nt/0 ta66/dA1/0ag/ 7u00/nt m/G 2m/ G 2m/ GA1/0ag/ d7 1oltag/ Am/ G 2?m/ G 2?m/ G0$s load 7u00/nt m/2 m/H2 m/H2E99i7i/n7. '.4'# '.+12 '.+12TUF '.2+) '.+12 '.#-3Ri66l/ 9a7to0 1.21 '.4+ '.4+
PI; ?m ?m 2?m
1+.%at is a1alan7%/ 80/a3do:n in PN un7tion diod/
T&e a,alanc&e brea$o!n ta$es lace !&en bot& sies o* t&e ;unction are li:&tly oe
an ue to t&is t&e eletion layer is lar:e. 8&en t&e re,erse bias ,olta:e is increase t&e
accelerate *ree electrons collie !it& t&e semiconuctor atoms in t&e eletion re:ion 6ue to
collision t&e co,alent bons are bro$en an electron &ole airs are :enerate. T&ese ne! c&ar:e
carriers so rouce ac%uire ener:y *rom alie otential an in turn rouce aitional
carriers. T&is *orms a cumulati,e rocess calle a,alanc&e multilication t&at causes t&e re,erse
current to increase raily. T&is leas to brea$o!n o* t&e ;unction $no!n as a,alanc&e
brea$o!n
1-. Ho: a t0ansisto0 is us/d as a s:it7%7 transistor s&oul be oerate in saturation an cuto** re:ions to use it
as a s!itc&. 8&ile oeratin: in saturation re:ion transistor carry &ea,y
current &ence consiere as N state. n cuto** it oesnt carry current an
it is e%ui,alent to oen.
!#2 %i7% 7on9igu0ation is 3no:n as /$itt/0 9ollo:/0 and :%. it is na$/d so
CC con*i:uration is $no!n as emitter *ollo!er !&ate,er may be t&e si:nalalie at t&e inut may rouce same si:nal at t&e outut. n ot&er !orst&e :ain o* t&e circuit is unity. So t&at t&e common collector circuit t&e socalle emitter *ollo!er is name as emitter *ollo!er ( outut *ollo!s t&e
inut".
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.
Unit – I; Digital El/7t0oni7s
PART A
1. Con1/0t @('(# @ *7NSB +Q 13)5
+Q 1)1 K )+Q 21 3
2 5
G (253)" +
2. Con1/0t t%/ 9ollo:ing H/?ad/7i$al to D/7i$al @a "C' @8 #2BE*7NSB (a"
= 4 * 16 2 + 12 * 16 1 + 5 * 16 0
= (1217) 10(b) = 9 * 16 –1 + 14 * 16 –2
+ 8 * 16 ‐3
= (1.18164)10
3. Convert(412) 10 into Octal
ANS:8 |4128 | 51 – 4
6 – 3
= (634) 8 4. Convert (1259) 10 into Hexadecimal
ANS 16| 1259
16| 78 –113 – 14
= (3EB) 1
5. Show how JK li!"#o! can $e converted to % #i!"#o!.
J &
CLK '. Convert (11101) ra to *inar code
ANS: B!"#$ E%&'"! = (10110) 2
>2 %at a0/ Uni1/0sal Gat/s %. a0/ t%/. 7all/d so
Uni,ersal :ates are N7N6 an NR t&ey are calle so because usin: t&ese
coes any lo:ical :ate or lo:ical eression can be eri,e.
+. Con1/0t FACE ( into O7tal1111 1010 1100 11101 7 5 3 1 6
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9 . %raw the loic diaram and tr+th ta$le ,or a hal, adder.
AB S C S = AB+AB00 0 0 C = AB01 1 010 1 011 0 1 U1A
U2A
10. -iven that ( 45' )r ( 2/ )10. ind r.
4 , #2+5 , #1+6 ,#0 = 2374#2+5#+6 = 2374#2+5#‐231 = 0 # = (‐5H25+3696)-8 =(‐561)-8= 7‐8.25 (#//) '" #// 7. S/ # = 7
11. ed+ce the ex!reion ( AB)AB + AB
=AABB + AB =0.B + AB =AB
12. ealie 3% and O ate +in 3% ate
AA
A
13. ealie 3% and O ate +in O ate onl
A
A
A
AN "!"/!
; "!"/!
) 0#b&') ("< "((/)A(b+>) = (A.b) +(A.>) " + (".b) =
(" + b)
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15. %itin+ih $etween com$inational loic and e+ential loic.
Com$inational 6oic Se+ential 6oicA >/b!"/!" >#>&>/! / /?>
S%&!" >#>& /$ /#$!
?" ) ! "/! / /?>?". #
#! #>$ #/ #!
/&& "# " &!>/! / !&"!
>/b!"/! / !& /?>"$ b$ "
/&& / %&!" >#>&! !/ /!$
/ B//"! &!>/!. /! #! !& b& "/ /! "!& "! b"'/# & b > b$" %&!> / !& "! !#!""
(2%at is 7o$8inational and s/u/ntial 7i07uit
C/b!"/!" >#>& " $ ! /&& />> #>$"! " ;/! / !&.S%&!" >#>& !>& /#$ !. S/ #! /-! !/ /!$ /! #! !& "! "/ /! #'/& /-.
17. -ive the tr+th ta$le o, 7 #i! #o!.
C (+
1)
0 0 00 1 11 0 11 1 0
18. 8ention the dierence $etween anchrono+ and nchrono+co+nter.
! "! "$!>#/!/& >/&!# D D/ /- #"!/! #' " " /> /##??#!? /# D D/. ! " $!>#/!/& >/&!# !& & "# " /" > !& / " D D/.
19. :hat i a ri!!le co+nter;
A # >/&!# /! ! /- #"!/! #' " " /> /##??#!? /# D‐D/.
20. 8ention the +e o, hi,t reiter.1. / !#/&> "$2. S#" / "#" >/!'##
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3. F"#" / #" >/!'#/!4. S%&!> ?!#"/#5. ;!? >/&!#
/ '"#$!? "!$ /! "#"# / ? #%&!>$ >"### >/#"!>
S!> b"!
# !'/ / /&" ?!" I& #"> #/ "& "@.!> "? ?!" &$ ##' ! !'/ / AH /'# "? "### %&" / #>"### '/"? %&"#
' b$ /"
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#"!>. FC =JC
2-2;O# FC‐ C"### /"### '/"?('/) ; – L/"#"!> ()
8. :ith re,erence to 8A de@ne mod+lation index.H/&"/! !@ #"/ / #%&!>$ '"/! "!/&"!? ?!" #%&!>$ = P - P = #%&!>$ '"/! !
= /&"!? ?!" #%&!>$ !
9.%e@ne deviation ratio. wort"cae mod+lation index
#"/ / "@& # #%&!>$ '"/! "!"@& /&"!? ?!" #%&!>$.
'"/! #"/ = P ("@) - ("@)10.3 carrier i ,re+enc i ,re+enc mod+lated with a in+oidalinal o, 2 KHB re+ltin in a maxim+m ,re+enc deviation o, 5 KHB.ind the a!!roximate $and width o, the mod+lated inal.
P = #%&!>$ '"/! ! = 5 K ("@) = ? /&"!? ?!"#%&!>$ ! = 2 K B"! O = 2Q P + ("@) R = 14 K
11.%itin+ih $etween narrow $and 8 and wide $and 8.
N"##/< b"! H O b"! H#%&!>$ '"/! !>"###
#%&!>$ '"/! !>"###
#%&!>$ '#$ " #%&!>$ "#?B"! &" "#
/&"!? #%&!>$ C"#/! #&12.:hat are the advantae o, 8 over 38;
". "& / H >/!"!. !> #"!# / !& !H. A!$ !/ &#/!? /! /&" >"### >"! b #/' #" / "!$ '"&.
. S!> ?&"# b"! "# #/' ! H # /b$ / "I">!
>"!! !##!>.. S!> "> '# &!
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A limiter " >#>& " #/&> " >/!"! "& /&& /# "!& ?!" "b/' " #>#b !& !& ' /! >" #/ '. A # & b/# >/# ! H #>'# / #/'&! >/&!>"/!
b" " !
/#b "#/&! #"#$ b/$. A! " " /! " 1 "!2.
1'.State Ke!lerD econd E third law.
b. " " /# %&" !#'" " &b / "! "!> b b$ &"! "! /#b "#/# "!/# >" b/$.
1F.:hat are the clai@cation o, atellite;. S" "# ?!#"$ >" " " /< "# /#b (LE)H& "#
/#b (HE)/# /$!>#/!/& "# /#b(E) .
19.%e@ne a @$er o!tic tem.. A! />" >/&!>"/! $ "! >#/!> >/&!>"/! $ " &
? " >"### / !/#"/!. >" b# >/&!>"/! $ & ?" /#"> b# / >/!"! ?
#/"?!>
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UNIT – I
ELECTRICAL CIRCUITS AND MEASUREMENTS
1. (a" State an elain irc&o**sla!. (+"
(b" Alain t&e !or$in: o* a 6ynamometer !attmeter !it& a neat s$etc&.(+"
2. (a" Alain any one tye o* 9 instruments. (+"
(b" Alain t&e !or$in: rincile o* P99C instruments. (+"3. Alain t&e construction an rincile o* oeration o* sin:le &ase ener:y meter. (1#"
4. (a" 7 series circuit &as RG1' LG5'm= an CG1''0 an is sulie !it&
2''?5'=D. 0in (i" meance (ii" current (iii" o!er (i," o!er *actor (,"
,olta:e ro across t&e eac& element. (+"
(b" 6eri,e t&e e%uation *or e%ui,alent resistance o* number o* resistors connecte in arallel.
(+"
5. 7 4''? is alie to t&ree star connecte ientical imeances eac& consistin: o* a
5. resistance in series !it& 3 inuctance reactance. 0in (i" line current (ii" Total
o!er sulie. (1#"
#. 0in t&e current t&rou:& eac& branc& by net!or$ reuction tec&ni%ue. (1#"
). Calculate a" t&e e%ui,alent resistances across t&e terminals o* t&e suly b" total current
sulie by t&e source an c" o!er eli,ere to 1# o&m resistor in t&e circuit s&o!n in *i:ure.
(1#"
+. n t&e circuit s&o!n etermine t&e current t&rou:& t&e 2 o&m resistor an t&e total current
eli,ere by t&e battery. Use irc&&o**sla!s. (1#"
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-. (a" n t&e net!or$ s&o!n belo! *in t&e current eli,ere by t&e battery. (1'"
(b" 6iscuss about ,olta:e an current i,ision rinciles (#"
1'. Usin: t&e noe ,olta:e analysis *in all t&e noe ,olta:es an currents in 1/3 o&m an 1/5
o&m resistances o* *i:ure. (1#"
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UNIT ! II
ELECTRICAL MACHINES
1. Alain t&e construction an rincile o* oeration o* a 6C :enerator !it& neat s$etc&. (1#"
2. (a" 6eri,e t&e e%uation *or inuce A90 o* a 6C mac&ine. (+"
(b" 6eri,e t&e tor%ue e%uation o* 6C motor. (+"
3. 6escribe t&e construction etails o* trans*ormer an also elain t&e rincile o*
oeration. (1#"
4. (a" 6eri,e t&e A90 e%uation o* a trans*ormer. (+"
(b" Alain t&e rincile o* oeration o* 6C 9otor. (+"
5. Alain t&e construction an rincile o* oeration o* sin:le &ase inuction motor.
(1#"
#. 7 trans*ormer !it& 4' turns on t&e &i:& ,olta:e !inin: is use to ste o!n t&e
,olta:e *rom 24'? to 12'?. 0in t&e number o* turns in t&e lo! ,olta:e !inin:.
(1#"
). 7 4 ole !a,e !oun :enerator &a,in: 4' slots an 1' conuctors lace er slot.
T&e *lu er ole is '.'2 !b. Calculate t&e :enerate em* !&en t&e :enerator is ri,e
at 12''
rm. (1#"
+. 7 25$! 25'? c s&unt :enerator &as armature an *iel resistances o* '.'#o&m an 1''o&m
resecti,ely. 6etermine t&e total armature o!er e,eloe !&en !or$in: (1" as a :eneratoreli,erin: 25 $! outut an (2" as a motor ta$in: 25$!. (1#"
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UNIT – III
SEMICONDUCTOR DE;ICES AND APPLICATIONS
1 Alain intrinsic an etrinsic semiconuctors !it& neat ia:rams. (1#"
2 6escribe t&e !or$in: o* a PN ;unction ioe !it& neat ia:rams. 7lso elain its ?
c&aracteristics. (1#"3 8&at is a >ener ioe Alain t&e oeration o* >ener ioe an ra! its
c&aracteristics. (1#"
Alain t&e oeration o* &al* !a,e recti*ier !it& neat s$etc& an eri,e t&e necessary eression. (1#"
5 Alain t&e oeration o* centre tae *ull !a,e recti*ier !it& neat ia:ram. (1#"
# Alain !it& a neat ia:ram &o! t&e inut an outut c&aracteristics o* a CA con*i:uration
can be obtaine. (1#"
) Comare t&e inut resistance outut resistance an ,olta:e :ain o* C
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UNIT – I;
DIGITAL ELECTRONICS
1. 6ra! an elain t&e oeration o* 7N6 R NT N7N6 an NR :ates !it& suitable trut&
table. (1#"
2. 8&at are uni,ersal :ates Alain t&eir rincile o* !or$in: !it& necessary trut&table.(1#"
3. Alain &al* aer an *ull aer. (1#"
4. 6esi:n a *ull aer an imlement it usin: lo:ic :ates. (1#"
5. 8rite s&ort notes onB (1#"
i". RS*li *lo ii".
6*li *lo iii". @
*li *lo i,". T
*li *lo
,". @master sla,e *li *lo
#.
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UNIT– ; FUNDAMENTALS OF COMMUNICATION ENGINEERING
1. (a" 8it& neat ia:ram elain t&e rincile o* oeration o* 7mlitue 9oulation. 6eri,e its
o!er relations. (1'"
(b" 8rite etaile notes on micro!a,e communication. (#"
2. (a" Alain satellite communication system. (+"
(b" 8rite s&ort notes on moulation an emoulation (+"
3. 6ra! t&e bloc$ ia:ram o* raio broacastin: an recetion system an elain t&e *unction o*
eac& bloc$. (1#"
4. (a" 6ra! t&e circuit ia:ram o* balance moulator an elain its oeration. (+"
(b" 8it& a neat bloc$ ia:ram elain t&e rincile o* oeration o* 07H. (+"
5. (a" Alain *re%uency moulation !it& necessary suortin: ia:rams. (+"
(b" 6e*ine moulation ine o* 79 si:nal. Alain it in terms o* maimum an minimum
,olta:e o* moulate si:nal (+"
#. (a" 8it& &el o* a neat ia:ram elain t&e basic comonents o* satellite
communication. (+"
(b" Alain t&e bloc$ ia:ram o* otical *iber communication systems. (+"
). Alain t&e rincile o* 7mlitue an 0re%uency moulation. (1#"
6ra! an elain t&e *unctional bloc$ ia:ram o* 9onoc&rome T? transmitter an recei,er. (1#"
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