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ASM InternationalAnalyst and Investor Technology Seminar Semicon West July 9, 2014
ENABLING ADVANCED CHIP MANUFACTURING WITH NEW MATERIALS
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SAFE HARBOR STATEMENTS
Safe Harbor Statement under the U.S. Private Securities Litigation Reform Act of 1995: All
matters discussed in this business and strategy update, except for any historical data, are
forward-looking statements. Forward-looking statements involve risks and uncertainties that
could cause actual results to differ materially from those in the forward-looking statements.
These include, but are not limited to, economic conditions and trends in the semiconductor
industry generally and the timing of the industry cycles specifically, currency fluctuations,
corporate transactions, financing and liquidity matters, the success of restructurings, the timing
of significant orders, market acceptance of new products, competitive factors, litigation involving
intellectual property, shareholder and other issues, commercial and economic disruption due to
natural disasters, terrorist activity, armed conflict or political instability, epidemics and other
risks indicated in the Company's filings from time to time with the U.S. Securities and Exchange
Commission, including, but not limited to, the Company’s reports on Form 20-F and Form 6-K.
The company assumes no obligation to update or revise any forward-looking statements to
reflect future developments or circumstances.
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OUTLINE
› New Materials: Moore’s law enablers
› ALD as enabler of new materials
• What is Atomic Layer Deposition (ALD)?
• Key strengths of ALD
› ASM and ALD
› ASM Products and selected applications
› Summary and Conclusions
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OUTLINE
› New Materials: Moore’s law enablers
› ALD as enabler of new materials
• What is Atomic Layer Deposition (ALD)?
• Key strengths of ALD
› ASM and ALD
› ASM Products and selected applications
› Summary and Conclusions
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SCALING IS INCREASINGLY ENABLED
BY NEW MATERIALS AND 3D TECHNOLOGIES
Scaling enabled by Litho
Scaling enabled by Materials
Scaling enabled by 3D
1995 2000 2005 2010 20151990 20252020
Strained Si
High-k
3D Memory
IEDM 2002
IEDM 2003
IEDM 2007
3D SIC
Chipworks 2012
Confidential and Proprietary Information
Double / QuadPatterning
Low-k
FinFET
GAA
High-mobility channel materials
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INCREASING INTRODUCTION RATE OF NEW MATERIALS
1960 1970 1980 1990 2000 2010
SOI
Cu
SiOF
SiGe
NiSi
Si(O)N
W
Ti/TiN
(B)PSG
Si,epi
SiO,N
Al-Cu
SOP
SiOC
AlO
Hf(Si)O
Ta/TaN
TaO
ZrO
LaO
SiC
Cu
SiOF
CoSi
Si(O)N
W
Ti/TiN
(B)PSG
Si,epi
SiO,N
Al-Cu
SOP
SiOC
Ta/TaN
TaO
TiSi
Si(O)N
WSi, PtSi
Ti/TiN
(B)PSG
Si,epi
SiO,N
Al-Cu
Si(O)N
WSi, MoSi
TiW
(B)PSG
Si,epi
SiO,N
Al-Cu
(B)PSG
Si,epi
SiO, SiN
Al-Cu
Si
SiO, SiN
Al-Cu
Starting Mat’l
FEOL
BEOL
SOI
Cu
SiOF
SiGe
NiSi
Si(O)N
W
Ti/TiN
(B)PSG
Si,epi
SiO,N
Al-Cu
SOP
SiOC
AlO
Hf(Si)O
Ta/TaN
TaO
ZrO
LaO
SiC
SiP
SiCP
CoWP
Co
2014
Porous SiOC
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NEW MATERIALS AND PROCESSES: MOORE’S LAW ENABLERS
Higher Capacitance, Lower Leakage
High-k and
Metal Gates
DRAM, RF,
decoupling
capacitors
Less Cross Talk, Faster Interconnect
(Porous)
Low-k Materials
Improved
Metals
Higher Mobility, Lower Resistance
Strain and new Channel Materials
New metal contacts
Smaller Feature Sizes
Sub-Rayleigh limit
patterning using
SDDP
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SEMICONDUCTOR GROWTH DRIVERS
SEMICONDUCTOR SALES BY KEY APPLICATION
Semiconductor growth drivers are mobile devicesPerformance per Watt becoming key metric factor in chip designDriving further innovation in materials
0
20
40
60
80
100
120
140
160
2011 2012 2013 2014 2015 2016 2017 2018
(USD billion)
Premium Smartphone
Utility/Basic Smartphone
Traditional Mobile Phone
Media Tablet, Utility/Basic
Media Tablet, Premium
PC, Ultramobile
PC, Notebook
PC, Desk-based
Source: Gartner, April 2014
CAGR‘13-’18
-7%
-20%
-8%
+22%
+9%
+18%
+14%
+6%
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OUTLINE
› New Materials: Moore’s law enablers
› ALD as enabler of new materials
• What is Atomic Layer Deposition (ALD)?
• Key strengths of ALD
› ASM and ALD
› ASM Products and selected applications
› Summary and Conclusions
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ALD AS AN ENABLER OF NEW MATERIALS
› New materials and 3D applications require more precise and
controlled thin film deposition
› Compared to conventional deposition techniques ALD offers
superior:
� Uniformity
� Conformality
� Interface control
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WHAT IS ATOMIC LAYER DEPOSITION (ALD)?
Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge
Step 3: Reaction to Oxide/Nitride
with O2, H2O, NH3 co-reactant
Step 4: Purge
and repeat…
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KEY STRENGTHS OF ALD RELATIVE TO
CONVENTIONAL DEPOSITION
Step Coverage
SEM’s Courtesy of Philips Research Labs
TiN
Uniformity
Max
Min
<1% 3σ
<0.7% M-m
29 nm SiO2
Interface Control
Atomically
engineered
interfaces to
optimize leakage
current, reliability
and work-functions
Composition Control
Excellent
composition
control for
ternary alloys;
all ALD
solution
demonstrated
for GSTRitala, E/Pcos 2012;
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OUTLINE
› New Materials: Moore’s law enablers
› ALD as enabler of new materials
• What is Atomic Layer Deposition (ALD)?
• Key strengths of ALD
› ASM and ALD
› ASM Products and selected applications
› Summary and Conclusions
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ASM AND ALD
› ASM is a leading player in the ALD market
� ASM introduced ALD into the semiconductor market in 1999
� Developing ALD technology since then
� Strong IP position
� Number 1 in high-k gate and strong position in spacer defined double patterning (SDDP)
› The ALD market offers strong growth opportunities
� High-k metal gate
� Spacer defined double patterning
� Other emerging applications
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Process Integration
ASM NEW MATERIALS DEVELOPMENT STRATEGY
N+≥3 New Materials Screening
N+2,3
Product DevelopmentN+1,2
ASM MicroChemistry, Finland
• Basic materials R&D
• Chemical synthesis
• Pre-cursor screening
ASMB @IMEC, Belgium
• Process development
• Integration
• Device characterization
Product Line Site
• Engineering
• Product development
• Product marketing
Custo
mer
join
t develo
pm
ent
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CRITICAL ALD SUPPLY CHAIN COMPONENTS
Fundamental
Capability
Process
PerformanceProductivity
Integrated
Process
Final Product
Capability
Pre-cursors
Pre-cursor
Delivery, Valves and Vessels
Reactors
Fab facilities,pumps & abatement
High productivity tools
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EXTENDIBILITY OF HAFNIUM BASED OXIDES
chipworks chipworks
45nm HK first RPMG
Planar FET 32 nm HK last RPMG
Planar FET 28nm HK first RPMG
Planar FET
22nm HK last RPMG
FinFET
chipworks chipworks
Fra
ctio
n o
f H
K A
do
pte
rs
Top: TEM’s reproduced with permission of ChipworksBottom: ASM estimates 2012
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OUTLINE
› New Materials: Moore’s law enablers
› ALD as enabler of new materials
• What is Atomic Layer Deposition (ALD)?
• Key strengths of ALD
› ASM and ALD
› ASM products and selected applications
› Summary and Conclusions
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FINFET CHALLENGES:
ALD ENABLES FURTHER SCALING IN 3D
• Materials properties and channel length must be uniform over fin height
• Conformal coverage required
• � ALD technology has become critical for HK and MG layers
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ASM PRODUCTS
ALD
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EmerALD® XP
Pulsar® XP
›Pulsar® XP
� ALD for high-k
� Cross-flow reactor
� Solid source delivery system
›EmerALD® XP
� ALD for metal gates
� Showerhead reactor
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WHAT IS PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD)?
Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge
Step 4: Purge
and repeat…
Plasma
Step 3: Reaction to Oxide/Nitride
or metal with O,N,H Radicals
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ALD IS ENABLING SUB-RAYLEIGH LIMIT LITHOGRAPHY WITH SPACER DEFINED DOUBLE PATTERNING
Litho-formed Template
ALD SiO2 Spacer
Anisotropic Etch
Pitch: P
Pitch: ½ P
90nm
45nm
PEALD SiO2 on resist
Spacer Defined Double Patterning with PEALD in production since 3x nm DRAM and Flash
Key enablers brought by PEALD• Uniformity: CD control
• Low temperatures (50C!!)
• Good step coverage
• Dense films
• Extendible to other materials
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LINERS AND SPACERS FOR 15 AND 10 nm
FinFET’S
PEALD SiO2 and Si3N4 permanent spacers
� Low temperature (300 – 500 °C)
� High conformality
� High quality (low WER, low leakage current)
40nm pitch
PEALD SiO PEALD SiN
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ASM PRODUCTS
PEALD AND PECVD
›XP8
� High productivity single wafer tool for both
PEALD and PECVD applications
� Accommodates up to 8 chambers for PEALD
or PECVD
� PEALD and PECVD can be integrated on the
same platform
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RC1
RC2
RC4
RC3
RC5
RC6
RC7
RC8
Eagle® XP8
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ASM PRODUCTS
Strong IP protected portfolio
ALD and PEALD
• ALD solution (Hafnium oxide)
• PEALD Low temp dielectrics
Market Requirements: 22nm→14nm →10nm and beyond
Process Application
Diffusion Furnace
• Unique “dual reactor dual boat” design
Epitaxy
• Epi films for Analog /power devices and for nMOS & pMOStransistors (logic & memory)
PECVD
• Extreme low-k films
• Smallest footprint per reactor
• Low Cost of Ownership
• Thick Epi layers for power devices
• Strained & relaxed Epi films for planar & FinFET devices
• Advanced intermetal dielectric film
ASM Relative Positioning
� #1 in the served ALD market
� Qualified by nearly all Logic and Foundry manufacturers
� Strengthening inroads with PEALD
� Leading IC manufacturers are customers
� ASM one of only two top vendors
� ASM one of only two top vendors in PE-CVD low-k
• ALD key for High-k Metal Gate technology
• 3D FinFET, GAA require more conformal layers, strength of ALD
• SDDP-application of PE-ALD
• Traditional materials, such as SiO2, Si3N4, and others are transitioning to ALD and PEALD
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ASM PRODUCTS
ADVANCED EPITAXY
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Intrepid® XP
› Advanced transistors enabled with Intrepid® XP� Strained epitaxial films for planar logic devices
� Relaxed & strained epitaxy for Si, SiGe & Ge based FinFETs
through 7nm• Channel (SRBs), S/D stressor, contact & passivation cap layer
› Integrated, low thermal budget pre-clean module � High quality surface with low interface contamination
› High productivity & lowest CoO
� Platform capability with 4 process modules• Flexible configuration with pre-clean (3+1& 2+2)
� Differentiated film growth processes enabling devices with
high drive currents & best-in-class productivity
� High throughput with pulsed Epi processes & high doping
levels
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EPI LAYERS FOR POWER DEVICES
MULTI-LAYER EPI TECHNOLOGY
› Power devices require multiple & thick Epitaxial films to withstand high breakdown voltages (600V ~ 800V)
› Breakdown voltage of the device dictates number of Epi layers needed
› In HVM by several power device manufacturers enabled by:
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N+ Drain
1st layer Epi
PR mask
B implant B implant
N+ Drain
1st layer Epi
2nd layer Epi
N+ Drain
1st layer Epi
2nd layer Epi
3rd layer Epi
B implant B implant
PR mask
4th layer EpiMultiple epi steps
ASM Product: Epsilon® 3200
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ASM PRODUCTS
Strong IP protected portfolio
ALD and PEALD
• ALD solution (Hafnium oxide)
• PEALD Low temp dielectrics
Market Requirements: 22nm→14nm →10nm and beyond
Process Application
Diffusion Furnace
• Unique “dual reactor dual boat” design
Epitaxy
PECVD
• Extreme low-k films
• Smallest footprint per reactor
• Low Cost of Ownership
• Advanced intermetal dielectric film
ASM Relative Positioning
� #1 in the served ALD market
� Qualified by nearly all Logic and Foundry manufacturers
� Strengthening inroads with PEALD
� Leading IC manufacturers are customers
� ASM one of only two top vendors
� ASM one of only two top vendors in PE-CVD low-k
• ALD key for High-k Metal Gate
technology
• 3D FinFET, GAA require more conformal layers, strength of ALD
• SDDP-application of PE-ALD
• Traditional materials, such as SiO2, Si3N4, and others are transitioning to ALD and PEALD
• Epi films for Analog /power devices and for nMOS & pMOStransistors (logic & memory)
• Thick Epi layers for power devices
• Strained & relaxed Epi films for planar & FinFET devices
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EXTENDIBILITY OF ASM’S LOW-K SOLUTION
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
90~45nm 32nm 22nm 15nm 11nm 8nm
ILD
k-v
alu
e Aurora® low-k (k=2.6)
Aurora® ELK (2.3-2.5)
UV-assisted process k<2.0?
Aurora® ELK (2.0)
Po
re S
ea
l / R
est
ora
tio
n
Aurora® low-k (k=2.8~3.1)
29
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ASM PRODUCTS
Strong IP protected portfolio
ALD and PEALD
• ALD solution (Hafnium oxide)
• PEALD Low temp dielectrics
Market Requirements: 22nm→14nm →10nm and beyond
Process Application
Diffusion Furnace
• Unique “dual reactor dual boat” design
Epitaxy
PECVD
• Extreme low-k films
• Smallest footprint per reactor
• Low Cost of Ownership
• Advanced intermetal dielectric film
ASM Relative Positioning
� #1 in the served ALD market
� Qualified by nearly all Logic and Foundry manufacturers
� Strengthening inroads with PEALD
� Leading IC manufacturers are customers
� ASM one of only two top vendors
� ASM one of only two top vendors in PE-CVD low-k
• ALD key for High-k Metal Gate technology
• 3D FinFET, GAA require more conformal layers, strength of ALD
• SDDP-application of PE-ALD
• Traditional materials, such as SiO2, Si3N4, and others are transitioning to ALD and PEALD
• Epi films for Analog /power devices and for nMOS & pMOStransistors (logic & memory)
• Thick Epi layers for power devices
• Strained & relaxed Epi films for planar & FinFET devices
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PRODUCTIVITY AND INNOVATION
Innovation: novel processes› Example 1: Novel hard mask
materials – e.g. for fabrication of
high aspect ratio structures in
silicon (with IMEC)
› Example 2: Low temp reactive
curing of dielectric film (WER 5A/s)
AB
Productivity› One A412 PLUS = > 80
kwpm (example: 2.5 hr
process, 95% available, 150
product wafer load)
› Dual boat/dual reactor system
› Clustering between reactors
possible – only vertical
furnace in the market with this
capability
24 hrs
Wa
fers
Ou
t in
on
e D
ay
04/11 0:00 04/12 0:00
LogisticsWHR Load/Unload
Processing (2.5 hr)
Tube A
Tube B
Tube A
Tube B
150
300
900
600
1200
1500
1800
2100
24 hrs
Lo
gg
ing
, re
al d
ata
:W
afe
rs O
ut
in o
ne
Da
y
04/11 0:00 04/12 0:00
LogisticsWHR Load/Unload
Processing (2.5 hr)
Tube A
Tube B
Tube A
Tube B
150
300
900
600
1200
1500
1800
2100
04/11 0:00 04/12 0:00
LogisticsWHR Load/Unload
Processing (2.5 hr)
Tube A
Tube B
Tube A
Tube B
150
300
900
600
1200
1500
1800
2100
• No defects• No pattern collapse• No line wiggling
Flat and low WER of dielectric film afer 1 hr of curing at 300°C
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0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
2012 2013 2014 2015 2016 2017 2018
$B
Wafer Fab Equipment by Node7 nm and below
10 nm
14 nm
22 nm
32 nm
45 nm
65nm & above
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WAFER FAB EQUIPMENT FORECAST
Share of 22nm and 14nm of total Equipment spending increasing in 2014-2015
Gartner April, 2014
Key customer ALD and PEALD penetrations in 22nm and 14nm: market segments with high expected growth
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OUTLINE
› New Materials: Moore’s law enablers
› ALD as enabler of new materials
• What is Atomic Layer Deposition (ALD)?
• Key strengths of ALD
› ASM and ALD
› ASM Products and selected applications
› Summary and Conclusions
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SUMMARY AND CONCLUSIONS
› Scaling is increasingly enabled by new materials and 3D technologies
› ALD and PEALD enable new materials and 3D
› The ALD market offers strong growth opportunities
› Intrepid® XP, system with 4 Epi reactors, targeting strained Epi layers
for CMOS, and Epsilon® 3200 for analog/power
› ASM’s low-k technology continues to be extendible
› ASM’s Vertical Furnace is providing high productivity, in combination
with continued process innovation
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