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Basics of Electronic Parts
3.1 Diode
3.1-1 Symbol display and basic characteristics
(1). Symbol displayIt is as shown in Fig. 3.1-1
(2). Appearance
Eamples are shown in Fig. 3.1-2 and Fig. 3.1-3.
!he meas"rements are gi#en $or re$erence
p"rpose.
!he diode si%e (diameter) is determined ro"ghly
by the rated c"rrent.
!!&'-*-13+
!!&'-*-13
!!&'-*-13,
FE-3-1
Fig. 3.1-1 isplay o$ diode symbol and names
/athode Anode
mm
Fig. 3.1-2 0ower diode (2 A)
mm
2 mm
12
Second band/athode band1. /athode2. Anode
ig. 3.1-3 Small signal-"se diode (4 .1A)
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(3). 'asic characteristics
the meas"rement method o$ the basic
characteristics is shown in Fig. 3.1-4 and Fig.
3.1-*.
Forward characteristic
It epresses the relationship o$ the #oltage
consisting o$ positi#e #oltage applied to anode and
negati#e #oltage applied to cathode and the c"rrent
that pases thro"gh the diode.
5e#erse characteristic
It epresses the relationship o$ the #oltage
consisting o$ negati#e #oltage applied to anode and
positi#e #oltage applied to cathode and the c"rrent
that passes thro"gh the diode.
Diode characteristics
!hey are shown in Fig. 3.1-+.
IF 6 Forward rated c"rrent
F 6 Forward drop #oltage
I5 6 5e#erse lea7age c"rrent
56 5e#erse rated #oltage
!!&'-*-1
!!&'-*-11
!!&'-*-12
FE-3-2
8 A
9-
oltage (F)
/"rrent
IF
8 A
-9
F6 Forward
Fig. 3.1-* 5e#erse characteristic meas"rement
56 5e#erseoltage (5)
/"rrent
I5
Fig. 3.1-4 Forward characteristic meas"rement
I5
5 F
IF
In the e#ent o$ brea7downd"e to application o$ #oltagehigher than rated
Fig. 3.1-+ iode characteristics
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3.1-2 Diode types, rectifier circuits and their waeforms
/hart 3.1-1 iode types recti$ier circ"its and their wa#e$orms (1)
:o Symbol and :ame ;a#e$orms o$ respecti#e parts
1
!!&'-*-13
Single-phase
hal$-wa#e
recti$ication!!&'-*-1
!!&'-*-14
2
!!&'-*-1*
/athode common
single-phase
$"ll-wa#e
recti$ication !!&'-*-1+
!!&'-*-1
3
!!&'-*-1,
Anode common
single-phase
$"ll-wa#e
recti$ication
(negati#e o"tp"t)!!&'-*-14
!!&'-*-141
!!&'-*-142
Single-phase bridge
$"ll-wa#e
reciti$ication
!!&'-*-143
!!&'-*-14
FE-3-3
1 c"rrent
5 c"rrentand 4>) o$ the gate p"lses (N). !he phaseangle (U) is an electrical angle (angle o$ lag) o$ N
relati#e to %ero point o$ A/. !he smaller the U
bigger the o. In short by changing the phase
angle o$ the gate p"lse it is possible to change the
o.
Fig. 3.4-3 shows that the thyristor t"rns on when the
gate p"lse is applied and $rom the point at which
the A/#al"e t"rns negati#e (the point at which U
eceeds 1>) re#erse #oltage is applied between
A-8 o$ the thyristor in res"lt the thyristor o$$. nly
d"ring the time the thyristor is t"rned on (is
cond"cting) wa#e$orms colored in blac7 are
de#eloped in the load resistance as o. !here are
no negati#e #oltage to o so it is / #oltage. !his
is the A/-/ con#ersion operation by the thyristor.
In general A/-/ con#ersion is called a con#erter
(power recti$ier). n the other hand /-A/
con#ersion is called an in#erter (power in#erter).
!!&'-*-2
FE-3-2+
o
Nate p"lsegeneration circ"it
A/
A-8
NA
N
8
&oadr
esistance
A/
A8
o
N
A8
o
N
;a#$orms when the phase angle o$ gate p"lse is ,>
;a#e$orms when the phase angle o$ gate p"lse is 4>
Fig. 3.4-3 Nate p"lse phase in single-phase hal$-wa#e
reciti$ier circ"it and wa#e$orms o$ each part
,
1
3* +2
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3.-0 *hyristor rectification circuit "conerter$
Shown below are eamples o$ the recti$ication
$orm"las. !here are other $orm"las b"t those
shown below are the most common.
Single-phase hal$ bridge recti$ication Single-phase $"ll bridge recti$ication 3-phase $"ll bridge recti$ication
!!&'-*-22 !!&'-*-23 !!&'-*-2
Shown in Fig. 3.4-3 is the single-phase hal$-wa#e
reciti$ier-con#erter. !he o wa#e$orms are not tr"e /
#oltage wa#e$orm. !o impro#e this three-phase $"ll-
wa#e reciti$ication ($"ll bridge) $orm"la needs to be
"sed.
3.- *hyristor ratin!s
/hart 3.4-1 shows the thyristor ratings as shown in
Fig. 3.4-2. !he main ratings are re#erse #oltage and
on-state c"rrent.
/hart 3.4-1 Eamples o$ absol"te maim"m thyristor ratings
Item /ode 5ating =nit
5epetiti#e pea7 re#erse #oltage 55@
/ re#erse #oltage 5(/) 32
5epetiti#e pea7 o$$-state #oltage 5@
/ o$$-state #oltage (/) 32
E$$ecti#e on-state c"rrent I!(5@S) 234 A
A#erage on-state c"rrent I!(A) 14 A
0ea7 gate loss 0FN@ 3 ;
A#ergae gate loss 0FN(A) ;
0ea7 $orward gate #ltage FN@ 2
0ea7 re#erse gate #oltage 5N@ 1
0ea7 $orward gate c"rrent IFN@ * A
"nction temperat"re !B - - 9124
3.0 68B*"6nsulated 8ate Bipolar *ransister$
FE-3-2
o
&oadr
esistance
o
&oadr
esistance
o
&oadr
esistance
Fig. 3.4- Eamples o$ thyristor recti$ication circ"its
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3.0-1 68B* symbol display and appearance
!!&'-*-24
3.0-2 9eanin! of 68B*
IN0! shown has the same str"ct"re as :0:
transistor which is the same str"ct"re as the
general transistor. !he part that is eC"i#alent to the
transistor base is called a gate. Instead o$ base
c"rrent gate #oltage is added to N-E allowing the
collector and emitter to cond"ct.
!here are ins"lators in the $orm o$ silicon oidebetween the gate (electrode) emitter and collector.
!hese let the isolated gate (ins"lated gate) control
the collector side (bipolar transistor str"ct"re).
!!&'-*-2*
!!&'-*-2+
FE-3-2,
E (Emitter)
F;N
(Nate)
/
F;6 Free-;heeling-iode
Fig. 3.*-1 4 ,A (appearance o$ three-element IN'!)
IN'!6 type@':,4A)
(/ollector)
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3.0-3 68B* characteristics
!he characteristic meas"rement circ"it is as shown
in Fig. 3.*-2. !his meas"rement circ"it is the same
characteristic meas"rement method that is "sed $orthe gro"nded-emitter circ"it in the transistor.
?owe#er the inp"t area o$ the transistor consists o$
the circ"it where the base c"rrent passes thro"gh.
!h"s the only di$$erence is that the inp"t area o$
IN'! consists o$ circ"it on which gate #oltage is
applied.
Fig. 3.*-3 shows the inp"t-o"tp"t characteristics
meas"red in the circ"it shown in Fig. 3.*-2.
(1) NE (!)
!his is the gate-emitter #oltage when the
transistor has been t"rned on completely
meanwhile grad"ally raising the gate #oltage.
As shown in /hart 3.*-2 the #al"e is .+ to
+.4.
(2) /E (sat)
!his is the sat"ration #oltage between the
collector and emitter when the transistor hasbeen t"rned on completely.
!he #al"es are as shown in /hart 3.*-2 and the
typical #al"e is 4.4.
(3) Nate c"rrent
!here is #ery little gate c"rrent when dri#ing the
IN'! gate (d"ring application o$ gate #oltage).
A slight amo"nt o$ c"rrent eists and this is
called gate-lea7age c"rrent as shown on /hart
3.*-2 (-4nA - 94nA).
!!&'-*-2
!!&'-*-2,
nA1-,A
FE-3-3
c
5 I/
NE
Fig. 3.*-2 I
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Basics of Electronic Parts
() Nate dri#ing power (loss)
First consider how many watts are needed to
dri#e the IN'! gate.
As eplained in (3) c"rrent does not $low into
the gate circ"it. nly #oltage needs to be
applied and the gate c"rrent is %ero.
So the dri#ing power is %ero. In other words this
is #ery di$$erent $rom a transistor and thyristor
beca"se the n"mber o$ watts needed to dri#e
IN'! is %ero.
(4) /a"tionary items to be ta7en into acco"nt to
dri#e the IN'!
As shown in Fig. 3.*-3 e#en when the gate has
a little #oltage and there is a positi#e charge
between the gate and emitter the IN'! may bet"rned on. !h"s to t"rn o$$ the IN'! completely
it is necessary to add (-) #oltage to the gate
#oltage as shown in Fig. 3.*-.
(*) Eample o$ gate dri#er circ"it (within dotted
lines)
0N6 0"lse Nenerator
!he gate #oltage wa#e$orms are as shown in
Fig. 3.*-.
Electric 0ower (watts)G #oltage c"rrent
!!&'-*-21
!!&'-*-211
FE-3-31
914
Nate #oltage(NE)
/ollector c"rrent
Ic G c
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3.0-% E#ample of catalo! contents
/hart 3.*-1 shows the absol"te maim"m ratings o$
?itachi IN'! (@':,4A) that are epressed in
Fig. 3.*-1 (leading items are $eat"red).
Forward c"rrent6 maim"m c"rrent that can pass
$orward.
ielectric #oltage6 maim"m brea7down #oltage
between the resin part and element in IN'!.
/hart 3.*-1 Absol"te maim"m ratings o$ @':,4A
Item /ode 5ating =nit
/ollector
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3. +autionary items for handlin! a hi!hpower deice "thyristor, 68B*$
/hart 3.+-1 states the ca"tionary remar7s that are
$o"nd in the operatorOs man"als iss"ed by
semicond"ctor man"$act"rers.
Familiari%e with the contents.
/hart 3.+-1 /a"tionary items $or handling power de#ice
Item /a"tionary items
!ransport
(1) 0lace the pac7age in the right direction in accordance with an instr"ction $rom the element
man"$act"re
(2) ?andle care$"lly throwing and dropping can ca"se the element to brea7.
(3) @a7e s"re not to get it wet especially d"ring rain or snow as that may lead to brea7down.
Storage
(1) !he $ollowing are ideal storage conditions. !emperat"re6 4 - 34?"midity6 less than +4T.
(2) A#oid en#ironments s"ch as places prone to corrosi#e gas de#elopment or where there areorganic sol#ents. !hey will ca"se r"st on metallic parts.
&ong-term
storage(1) !a7e h"midity co"ntermeas"res $or element storage o$ more than one year.
!ransport
handling(1) o not transport the lead wiring by holding in yo"r hand.
Installation
(1) /onnect properly $or anode cathode and gate polarities. @isconnection and s"bseC"ent
cond"ction may damage the element.
(2) Apply a thin "ni$orm layer o$ cond"cti#e compo"nd on the presss"re-welded s"r$ace o$ a
$lat element or the contact s"r$ace o$ a st"dded element.
Select a compo"nd that does not deteriorate and change with time passage.
(3) !a7e care to e#enly press"re-weld the s"r$ace o$ the $lat element to a#oid weight
inconsistency. F"rthermore tighten the press"re weld element within the reg"lated limits"sing a torC"e wrench etc (re$er to semicond"ctor man"$act"rerOs instr"ctions).
/o"ntermeas"
res $or static
electricity
!he IN'! gate circ"it o$ the power de#ice is partic"larly sensiti#e to static electricity so
obser#e the $ollowing.
(1) o not "se a container $or transport