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Basics of Electronic Parts

3.1 Diode

3.1-1 Symbol display and basic characteristics

(1). Symbol displayIt is as shown in Fig. 3.1-1

(2). Appearance

Eamples are shown in Fig. 3.1-2 and Fig. 3.1-3.

!he meas"rements are gi#en $or re$erence

p"rpose.

!he diode si%e (diameter) is determined ro"ghly

by the rated c"rrent.

!!&'-*-13+

!!&'-*-13

!!&'-*-13,

FE-3-1

Fig. 3.1-1 isplay o$ diode symbol and names

/athode Anode

mm

Fig. 3.1-2 0ower diode (2 A)

mm

2 mm

12

Second band/athode band1. /athode2. Anode

ig. 3.1-3 Small signal-"se diode (4 .1A)

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Basics of Electronic Parts

(3). 'asic characteristics

the meas"rement method o$ the basic

characteristics is shown in Fig. 3.1-4 and Fig.

3.1-*.

Forward characteristic

It epresses the relationship o$ the #oltage

consisting o$ positi#e #oltage applied to anode and

negati#e #oltage applied to cathode and the c"rrent

that pases thro"gh the diode.

5e#erse characteristic

It epresses the relationship o$ the #oltage

consisting o$ negati#e #oltage applied to anode and

positi#e #oltage applied to cathode and the c"rrent

that passes thro"gh the diode.

Diode characteristics

!hey are shown in Fig. 3.1-+.

IF 6 Forward rated c"rrent

F 6 Forward drop #oltage

I5 6 5e#erse lea7age c"rrent

56 5e#erse rated #oltage

!!&'-*-1

!!&'-*-11

!!&'-*-12

FE-3-2

8 A

9-

oltage (F)

/"rrent

IF

8 A

-9

F6 Forward

Fig. 3.1-* 5e#erse characteristic meas"rement

56 5e#erseoltage (5)

/"rrent

I5

Fig. 3.1-4 Forward characteristic meas"rement

I5

5 F

IF

In the e#ent o$ brea7downd"e to application o$ #oltagehigher than rated

Fig. 3.1-+ iode characteristics

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Basics of Electronic Parts

3.1-2 Diode types, rectifier circuits and their waeforms

/hart 3.1-1 iode types recti$ier circ"its and their wa#e$orms (1)

:o Symbol and :ame ;a#e$orms o$ respecti#e parts

1

!!&'-*-13

Single-phase

hal$-wa#e

recti$ication!!&'-*-1

!!&'-*-14

2

!!&'-*-1*

/athode common

single-phase

$"ll-wa#e

recti$ication !!&'-*-1+

!!&'-*-1

3

!!&'-*-1,

Anode common

single-phase

$"ll-wa#e

recti$ication

(negati#e o"tp"t)!!&'-*-14

!!&'-*-141

!!&'-*-142

Single-phase bridge

$"ll-wa#e

reciti$ication

!!&'-*-143

!!&'-*-14

FE-3-3

1 c"rrent

5 c"rrentand 4>) o$ the gate p"lses (N). !he phaseangle (U) is an electrical angle (angle o$ lag) o$ N

relati#e to %ero point o$ A/. !he smaller the U

bigger the o. In short by changing the phase

angle o$ the gate p"lse it is possible to change the

o.

Fig. 3.4-3 shows that the thyristor t"rns on when the

gate p"lse is applied and $rom the point at which

the A/#al"e t"rns negati#e (the point at which U

eceeds 1>) re#erse #oltage is applied between

A-8 o$ the thyristor in res"lt the thyristor o$$. nly

d"ring the time the thyristor is t"rned on (is

cond"cting) wa#e$orms colored in blac7 are

de#eloped in the load resistance as o. !here are

no negati#e #oltage to o so it is / #oltage. !his

is the A/-/ con#ersion operation by the thyristor.

In general A/-/ con#ersion is called a con#erter

(power recti$ier). n the other hand /-A/

con#ersion is called an in#erter (power in#erter).

!!&'-*-2

FE-3-2+

o

Nate p"lsegeneration circ"it

A/

A-8

NA

N

8

&oadr

esistance

A/

A8

o

N

A8

o

N

;a#$orms when the phase angle o$ gate p"lse is ,>

;a#e$orms when the phase angle o$ gate p"lse is 4>

Fig. 3.4-3 Nate p"lse phase in single-phase hal$-wa#e

reciti$ier circ"it and wa#e$orms o$ each part

,

1

3* +2

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Basics of Electronic Parts

3.-0 *hyristor rectification circuit "conerter$

Shown below are eamples o$ the recti$ication

$orm"las. !here are other $orm"las b"t those

shown below are the most common.

Single-phase hal$ bridge recti$ication Single-phase $"ll bridge recti$ication 3-phase $"ll bridge recti$ication

!!&'-*-22 !!&'-*-23 !!&'-*-2

Shown in Fig. 3.4-3 is the single-phase hal$-wa#e

reciti$ier-con#erter. !he o wa#e$orms are not tr"e /

#oltage wa#e$orm. !o impro#e this three-phase $"ll-

wa#e reciti$ication ($"ll bridge) $orm"la needs to be

"sed.

3.- *hyristor ratin!s

/hart 3.4-1 shows the thyristor ratings as shown in

Fig. 3.4-2. !he main ratings are re#erse #oltage and

on-state c"rrent.

/hart 3.4-1 Eamples o$ absol"te maim"m thyristor ratings

Item /ode 5ating =nit

5epetiti#e pea7 re#erse #oltage 55@

/ re#erse #oltage 5(/) 32

5epetiti#e pea7 o$$-state #oltage 5@

/ o$$-state #oltage (/) 32

E$$ecti#e on-state c"rrent I!(5@S) 234 A

A#erage on-state c"rrent I!(A) 14 A

0ea7 gate loss 0FN@ 3 ;

A#ergae gate loss 0FN(A) ;

0ea7 $orward gate #ltage FN@ 2

0ea7 re#erse gate #oltage 5N@ 1

0ea7 $orward gate c"rrent IFN@ * A

"nction temperat"re !B - - 9124

3.0 68B*"6nsulated 8ate Bipolar *ransister$

FE-3-2

o

&oadr

esistance

o

&oadr

esistance

o

&oadr

esistance

Fig. 3.4- Eamples o$ thyristor recti$ication circ"its

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Basics of Electronic Parts

3.0-1 68B* symbol display and appearance

!!&'-*-24

3.0-2 9eanin! of 68B*

IN0! shown has the same str"ct"re as :0:

transistor which is the same str"ct"re as the

general transistor. !he part that is eC"i#alent to the

transistor base is called a gate. Instead o$ base

c"rrent gate #oltage is added to N-E allowing the

collector and emitter to cond"ct.

!here are ins"lators in the $orm o$ silicon oidebetween the gate (electrode) emitter and collector.

!hese let the isolated gate (ins"lated gate) control

the collector side (bipolar transistor str"ct"re).

!!&'-*-2*

!!&'-*-2+

FE-3-2,

E (Emitter)

F;N

(Nate)

/

F;6 Free-;heeling-iode

Fig. 3.*-1 4 ,A (appearance o$ three-element IN'!)

IN'!6 type@':,4A)

(/ollector)

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Basics of Electronic Parts

3.0-3 68B* characteristics

!he characteristic meas"rement circ"it is as shown

in Fig. 3.*-2. !his meas"rement circ"it is the same

characteristic meas"rement method that is "sed $orthe gro"nded-emitter circ"it in the transistor.

?owe#er the inp"t area o$ the transistor consists o$

the circ"it where the base c"rrent passes thro"gh.

!h"s the only di$$erence is that the inp"t area o$

IN'! consists o$ circ"it on which gate #oltage is

applied.

Fig. 3.*-3 shows the inp"t-o"tp"t characteristics

meas"red in the circ"it shown in Fig. 3.*-2.

(1) NE (!)

!his is the gate-emitter #oltage when the

transistor has been t"rned on completely

meanwhile grad"ally raising the gate #oltage.

As shown in /hart 3.*-2 the #al"e is .+ to

+.4.

(2) /E (sat)

!his is the sat"ration #oltage between the

collector and emitter when the transistor hasbeen t"rned on completely.

!he #al"es are as shown in /hart 3.*-2 and the

typical #al"e is 4.4.

(3) Nate c"rrent

!here is #ery little gate c"rrent when dri#ing the

IN'! gate (d"ring application o$ gate #oltage).

A slight amo"nt o$ c"rrent eists and this is

called gate-lea7age c"rrent as shown on /hart

3.*-2 (-4nA - 94nA).

!!&'-*-2

!!&'-*-2,

nA1-,A

FE-3-3

c

5 I/

NE

Fig. 3.*-2 I

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Basics of Electronic Parts

() Nate dri#ing power (loss)

First consider how many watts are needed to

dri#e the IN'! gate.

As eplained in (3) c"rrent does not $low into

the gate circ"it. nly #oltage needs to be

applied and the gate c"rrent is %ero.

So the dri#ing power is %ero. In other words this

is #ery di$$erent $rom a transistor and thyristor

beca"se the n"mber o$ watts needed to dri#e

IN'! is %ero.

(4) /a"tionary items to be ta7en into acco"nt to

dri#e the IN'!

As shown in Fig. 3.*-3 e#en when the gate has

a little #oltage and there is a positi#e charge

between the gate and emitter the IN'! may bet"rned on. !h"s to t"rn o$$ the IN'! completely

it is necessary to add (-) #oltage to the gate

#oltage as shown in Fig. 3.*-.

(*) Eample o$ gate dri#er circ"it (within dotted

lines)

0N6 0"lse Nenerator

!he gate #oltage wa#e$orms are as shown in

Fig. 3.*-.

Electric 0ower (watts)G #oltage c"rrent

!!&'-*-21

!!&'-*-211

FE-3-31

914

Nate #oltage(NE)

/ollector c"rrent

Ic G c

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Basics of Electronic Parts

3.0-% E#ample of catalo! contents

/hart 3.*-1 shows the absol"te maim"m ratings o$

?itachi IN'! (@':,4A) that are epressed in

Fig. 3.*-1 (leading items are $eat"red).

Forward c"rrent6 maim"m c"rrent that can pass

$orward.

ielectric #oltage6 maim"m brea7down #oltage

between the resin part and element in IN'!.

/hart 3.*-1 Absol"te maim"m ratings o$ @':,4A

Item /ode 5ating =nit

/ollector

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Basics of Electronic Parts

3. +autionary items for handlin! a hi!hpower deice "thyristor, 68B*$

/hart 3.+-1 states the ca"tionary remar7s that are

$o"nd in the operatorOs man"als iss"ed by

semicond"ctor man"$act"rers.

Familiari%e with the contents.

/hart 3.+-1 /a"tionary items $or handling power de#ice

Item /a"tionary items

!ransport

(1) 0lace the pac7age in the right direction in accordance with an instr"ction $rom the element

man"$act"re

(2) ?andle care$"lly throwing and dropping can ca"se the element to brea7.

(3) @a7e s"re not to get it wet especially d"ring rain or snow as that may lead to brea7down.

Storage

(1) !he $ollowing are ideal storage conditions. !emperat"re6 4 - 34?"midity6 less than +4T.

(2) A#oid en#ironments s"ch as places prone to corrosi#e gas de#elopment or where there areorganic sol#ents. !hey will ca"se r"st on metallic parts.

&ong-term

storage(1) !a7e h"midity co"ntermeas"res $or element storage o$ more than one year.

!ransport

handling(1) o not transport the lead wiring by holding in yo"r hand.

Installation

(1) /onnect properly $or anode cathode and gate polarities. @isconnection and s"bseC"ent

cond"ction may damage the element.

(2) Apply a thin "ni$orm layer o$ cond"cti#e compo"nd on the presss"re-welded s"r$ace o$ a

$lat element or the contact s"r$ace o$ a st"dded element.

Select a compo"nd that does not deteriorate and change with time passage.

(3) !a7e care to e#enly press"re-weld the s"r$ace o$ the $lat element to a#oid weight

inconsistency. F"rthermore tighten the press"re weld element within the reg"lated limits"sing a torC"e wrench etc (re$er to semicond"ctor man"$act"rerOs instr"ctions).

/o"ntermeas"

res $or static

electricity

!he IN'! gate circ"it o$ the power de#ice is partic"larly sensiti#e to static electricity so

obser#e the $ollowing.

(1) o not "se a container $or transport