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J.O.B. Technologies (Strategic
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High Mobility Ge-Channel
Formation By Localized/Selective
Liquid Phase Epitaxy (LPE) Using
Ge+B Plasma Ion Implantation
And Laser Melt Annealing
John Borland1, Shu Qin2, Peter Oesterlin3, Karim Huet4, Walt
Johnson5, Lauren Klein6, Gary Goodman6, Alan Wan6, Steven
Novak7, Thomas Murray7, Richard Matyi7, Abhijeet Joshi8 and Si
Prussin8
1J.O.B. Technologies & APIC, Honolulu, Hawaii, 2Micron Technology,
Boise, Idaho, 3Innovavent, Gottingen, Germany, 4Excico, Paris, France, 5KLA-Tencor, Milpitas, California, 6EAG, East Windsor, New Jersey,
7CNSE, Albany, New York, 8UCLA, Los Angles, California
IWJT-2013, June 6-7, 2013
Outline
• Introduction
• Experimentation
– Micron for Ge+B Plasma Implantation/Deposition Doping
– Innovavent/Germany for 515nm laser annealing
– Excico/France for 308nm laser annealing
• Results
– KT/Shanghai for Hx-4PP and TW analysis
– EAG/NJ for SIMS analysis
– CNSE/Albany for SIMS, XRD & X-TEM analysis
– UCLA differential Hall analysis for mobility and carrier
density depth profiles
• Summary2
Outline
• Introduction
– SiGe & Ge High Mobility Channel Formation Methods
• Experimentation
• Results
• Summary
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V. Moroz, ECS Oct 2010
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SSDM-2011: Apple iPhone 4Channel strain measurements in
32nm-node CMOSFETs Munehisa Takei1, Hiroki Hashiguchi1, Takuya Yamaguchi1, Daisuke Kosemura1,
Kohki Nagata1, 2, and Atsushi Ogura1
1School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku,
Kawasaki, 214-8571, Japan
Phone/Fax: +81-44-934-7324, E-mail: m_takei@ meiji.ac.jp
3.75GPa 850MPa
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Tensile Strain Compressive Strain
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200nm Ge Infusion Deposition
On Photo Resist4/23/04
Borland et al., J.O.B. Technologies & Epion, ECS
SiGe Sym., PV 2004-07, p. 769, Oct. 6, 2004
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Infusion Ge-Doping/Deposition (Increasing Dose)Medium Dose Increase Bss, High Dose Dose Controlled Deposition (DCD)
SiGe DCD
70nm Ge-DCD on 300mm bulk
& SOI wafer <0.45% uniformity
Borland et al., J.O.B. Technologies & Epion, ECS SiGe Sym., PV 2004-07, p. 769, Oct. 6, 2004
a-Ge
a-SiGe
c-Si
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0.9um Pixel CMOS Imager Sensor
Technology with Backside Illumination
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TSMC, IEDM-2010, paper 14.1
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LLM used for both c-Si and multi-Si Solar Cells!
13
Borland et al,
EU-PVSEC
2012
14
1E+17
1E+18
1E+19
1E+20
1E+21
1E+22
0 0.5 1 1.5 2 2.5 3 3.5
Co
ncen
trati
on
(A
tom
s/c
m3
)
Depth (µm)
11B=2.1E15/cm2
N=3.3E16/cm2
11B=2.4E15/cm2
N=3.9E16/cm2
11B=1.5E15/cm2
N=3.3E16/cm2
11B=1.8E15/cm2
N=6.2E16/cm2
N-8, #16, 6.5J/cm2
N-8, #10, 5J/cm2
N-8, #2, 3J/cm2
N-8, no anneal
D538p12_N8_0, 3, 5 & 6
80nm SiN/ARC+B-implant: Note Nitrogen Melt Profile!
S
i
N
Borland et al., EU-PVSEC 2012
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=805C
=932C
=1050C
=1147C
With KrF sees selective/localized Si-melt of amorphous region only!
IWJT-2011 S9-4 paper by Keio Univ/SEN/SHI on p+ USJ by non-melt
KrF(248nm) and Green (527nm) laser annealing.
Outline• Introduction
• Experimentation
– Ge+B Plasma Implantation/Deposition Doping
• Ge=3kV, 1E16/cm2 and 1e17/cm2 dose
• B=500V, 4E15/cm2 and 4E16/cm2 dose
– Laser Melt Annealing
• Innovavent 515nm laser
• Excico 308nm laser
• Results
• Summary
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Beam-line
Plasma
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#13, GEH3K1E16
(8.6sec) shows a ~20%
Ge peak near Si surface,
also shows a ~ 1.5nm
native SiO2/GeOx layer.
#15 (#2), GEH3K1E17
(66 sec) shows a ~55%
Ge peak near Si surface,
also shows a ~ 1.8nm
native SiO2/GeOx layer.
Micron Provided Wafers
Why not 200%?
Outline
• Introduction
• Experimentation
• Results
– 308nm Laser Anneal
– 515nm Laser Anneal
• Summary
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Excico-Rs
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10
100
1000
10000
100000
1000000
10000000
0.00 0.50 1.00 1.50 2.00 2.50 3.00
BH500V/4E15
GE1E16+BH4E15
GE1E17+BH4E15
BH500V/4E16
Laser Power (J/cm2)
Rs
(ohms/sq)
Melt threshold by TRR
20% Ge
55% Ge
Excico-Therma-Wave (TW)
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100.00
1000.00
10000.00
100000.00
1000000.00
0.00 0.50 1.00 1.50 2.00 2.50 3.00
BH500V/4E15
GE1E16+BH4E15
GE1E17+BH4E15
BH500V/4E16
GEE17+BH4E16
Laser Power (J/cm2)
TW
Dopant Activation threshold?
Melt threshold by TRR!
a-Ge
Poly-Ge LPE-Ge
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0.0J/cm2 1.0J/cm2 2.5J/cm2
Surface
a-SiGe
EOR damage
Poly-SiGe
a-Ge
EOR damage
Surface
Strain-Ge
Surface
a-Ge
EOR damage
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0.0J/cm2
0.0001
0.001
0.01
0.1
1
10
100
1.00E+17
1.00E+18
1.00E+19
1.00E+20
1.00E+21
1.00E+22
1.00E+23
0 50 100 150 200 250
Ge A
rb u
nit
s
B, C
, O
Co
ncen
trati
on
(at/
cm
3)
Depth (nm)
12C
18O
11B+28Si
#REF!
28Si+74Ge
a-Ge
EOR (end-of-range) defects
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0.0001
0.001
0.01
0.1
1
10
100
1.00E+17
1.00E+18
1.00E+19
1.00E+20
1.00E+21
1.00E+22
1.00E+23
0 50 100 150 200 250
Ge A
rb.
Un
its
B, C
, O
Co
ncen
trati
on
(at/
cm
3)
Depth (nm)
12C
16O
11B+28Si
28Si+74Ge
1.0J/cm2
Ge=60%
O=5E20/cm3
C=3E20/cm3
B=3E19/cm3
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0.001
0.01
0.1
1
10
100
1.00E+17
1.00E+18
1.00E+19
1.00E+20
1.00E+21
1.00E+22
0 50 100 150 200 250
Ge
Arb
. U
nit
s
B, C
, O
Co
nc
en
tra
tio
n (
at/
cm
3)
Depth (nm)
12C
16O
11B+28Si
28Si+74Ge
2.5J/cm2
Ge=5-25%
C=1-3E19/cm3
B=8E18/cm3
O=2-5E18/cm3
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600
Mo
bilit
y (
cm
2V
-1s
-1)
Depth (Å)
Mobility JA14ED12-1
Drift
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600
Depth (Å)
Ge=1E17/cm2 + BH=4E16/cm2
Ge=1E16/cm2 + BH=4E15/cm2
>4x hole-mobility!
UCLA Hall Analysis of 308nmSlot#14:Ge=1E16+B=4E15
Slot#18: Ge=1E17+B=4E16
Ge=0%+BH=4E16/cm2
Excico (308nm) Ge-SIMS by CNSE
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0.1
1
10
100
0 20 40 60 80 100 120 140 160 180 200
Ge 2.5J
Ge 1.0J
Ge 0.5J
Ge 0.25J
Ge Concentration %
Depth (nm)
2.5J/cm2 Ge~5-40%
1.0J/cm2 Ge~40%
0.5J/cm2 Ge~60%0.25J/cm2 Ge~67%
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480
1390
60
Ge=3900 (2.5x)
Ge=1900 (4x)
Si=39
55%Ge=160
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
0 0.5 1 1.5 2 2.5 3 3.5
308nm ExcicoMelt Depth (A)
Laser Power Level (J/cm2)
55% Ge
0%Ge
Innovavent-Therma-Wave (TW)
30
100.00
1000.00
10000.00
100000.00
1000000.00
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00
BH500V/4E15
GE1E16+BH4E15
GE1E17+BH4E15
BH500V/4E16
No Implant
TW
Laser Power (J/cm2)
55% Ge
20% Ge
0% Ge
0% Ge
0% Ge
Innovavent-Rs
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10.00
100.00
1000.00
10000.00
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00
BH500V/4E15
GE1E16+BH4E15
GE1E17+BH4E15
BH500V/4E16
Laser Power (J/cm2)
Rs
(ohms/sq)
0% Ge
55% Ge
20% Ge
0% Ge
320.00001
0.0001
0.001
0.01
0.1
1
10
100
1E+15
1E+16
1E+17
1E+18
1E+19
1E+20
1E+21
1E+22
0 200 400 600 800 1000 1200
Ge
IN
TE
NS
ITY
(arb
itra
ry u
nits)
B C
ON
CE
NT
RA
TIO
N (
ato
ms/c
c)
DEPTH (Å)
B
BB
B
Ge->
Y0DHV503_yl_11Micronslot9DPAGM038MX03Unannealed(B)
0.0J/cm2: B=2E21/cm3=4.1E14/cm2, Xj~11nm
0.5J/cm2: B=8E20/cm3=2.2E14/cm2, Xj~12nm
1.0J/cm2: B=7E19/cm3=2.4E14/cm2, Xj~35nm
2.0J/cm2: B=2-3E19/cm3=3.3E14/cm2 Xj~105nm
Ge=3-6% <95nm
Ge=10-30% <22nm
Ge=45% <10nm
Ge=55% <3nm
Ge-Plasma channeling
B-channeling
Amorphous Ge-Plasma Implant
X-TEM
Boron Implant
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1
10
100
1000
10000
1.E+13 1.E+14 1.E+15 1.E+16 1.E+17
Microwave 5min 750C 90min
850C 60min 1050C 10min
Laser Melt=3J Laser Melt=5J
Rs
(ohm
s/sq
)
Boron Dose (/cm2)
Plasma=B2H6
Plasma=BF3
1.0 J/cm2
2.0 J/cm2
1.0 J/cm2
2.5 J/cm2
0%Ge
308nm laser
515nm laser
B=8E13/cm2! B=3E14/cm2!
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
0 0.5 1 1.5 2 2.5 3
515nm InnovaventMelt Depth (A)
Laser Power Level (J/cm2)
0% Ge
55% Ge
Melt Depth (Xj-Angstrom)
TW or Rs
10
100
1000
10000
100000
1000000
0 200 400 600 800 1000 1200 1400 1600
308nm-TW 308nm-Rs 515nm-TW 515nm-Rs
515nm
B=8E13/cm2
B=3E14/cm2
Ge=1E17/cm2
B=4E15/cm2
Summary & What Next?:• High quality Ge-Epitaxy was achieved from 1e17/cm2
amorphous Ge-plasma implantation when using LPE (liquid
phase epitaxy) by both 308nm and 515nm laser melt annealing.
• This resulted in a 4x increase in surface hole-mobility.
– Try lower B dose <5E12/cm2 and look at electron mobility next.
• The 308nm laser melt annealing process achieved shallow
<10nm selective localized melting of amorphous-Ge and
amorphous-Si regions but showed higher Rs dopant activation.
– Why >3x lower B electrical activation or B retained dose? Loss of
surface Ge doping reported with Ge-RMG without surface cap!
• The 515nm laser melt annealing process showed lower Rs
dopant activation (higher B retained dose) but was not selective
to amorphous-Ge or amorphous-Si regions.
– Try longer pulse duration next.
• Next: Ge, SiGe & Si hole (B) and electron (P, As & Sb) mobility
– Ge beam-line implantation at 5E16/cm2 dose
– Ge-Epilayer on Si-bulk, SiGe-buffer and SOI wafers
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