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History & Future of TFH lithography
IDEMA – Symposium on Perpendicular RecordingDecember 7, 2006Norbert Kappel, ASML Special Applications
/ Slide 2
Outline
History of ASML systems in TFHReview of Imaging/Processing capabilitiesFlash vs. HDDFuture Roadmaps
Areal densityImaging requirements & solutions
Conclusions
/ Slide 3
Outline
History of ASML systems in TFHReview of Imaging/Processing capabilitiesFlash vs. HDDFuture Roadmaps
Areal densityImaging requirements & solutions
Conclusions
/ Slide 4
TFH Lithography: an “ASML Special Application”PAS 5500 /300
PAS 5500 /850 & /1150
Stepper system (248nm)
Scanner systems (248nm & 193nm)
/ Slide 5
....and ASML will support our TFH
customers to succeed
ASML understands TFH is driven to constantly increase storage density…………
2002: advanced processing at <100 nm
TMR read headsPM recording
HA magnetic recordingDTR / Patterned media
High Bs write heads
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PAS5500/300 PAS5500/1150PAS5500/850Wavelength 248nm (DUV)Resolution 0.25 µmOverlay < 45nmDistortion < 35nmField size 31.1mm diaThroughput >120WPH (for 150mm substrate)
Wavelength 248nm (DUV)Resolution 0.11 µmOverlay < 15nmDistortion < 12nmField size 26 x 33 mmThroughput >145 WPH (for 150mm substrate)
Wavelength 193nm (DUV)Resolution 0.09 µmOverlay < 12nmDistortion < 12nmField size 26 x 33 mmThroughput >135 WPH (for 150mm substrate)
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ASML PAS5500 system TFH innovations & upgrades
Thick, heavy AlTiC wafer handlingTFH dedicated software & metrologyESD prevention upgrade
Overlay & related upgradesImaging upgrades
SMARTHEAD
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Outline
History of ASML systems in TFHReview of Imaging/Processing capabilitiesFlash vs. HDDFuture Roadmaps
Areal densityImaging requirements & solutions
Conclusions
/ Slide 9
Feature sizes: 500 nm down to 150 nm
Initial imaging test on typical TFH isolated features
200 nm
180 nm
160 nmPAS 5500 /300
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ASML TFH Imaging knowledge – ISO features
Challenge Results
Thick resist imaging with enhanced DoF
Successful imaging of sub-300nm trench in 4um+ thick
resistUltimate resolution in thin
resistSuccessful imaging of 70nm
lines and belowIsolated lines (IL) + Assist Features (AF) illumination
process windows
Tailored illumination, no intensity loss, largest process window (DoF, productivity)*
*: automatic aperture size change by zoom axicon
Developed with our customers on /300 and later enhanced on the /800 and /1100 series scanners
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248nm DUV- Thick resist imaging for TFHUsing a low NA setting and conventional illumination
300nm Isolated Space imaging on Silicon in 4um of resist
Resist: Clarient AZ DTF-8 NA setting: 0.40 σ value: 0.37
300nm Isolated Space imaging on Nickel-Iron in 4um of resist
+0.0um +0.2um +0.4um +0.6um
+0.2um +0.4um +0.6um +0.8um
Focus setting
Focus setting
PAS 5500/300
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110nm Isolated Line process: without AF
- 0.4 µm
- 0.3 µm
- 0.2 µm - 0.1 µm 0.0 µm
0.1 µm
0.2 µm
0.25 µm
0.35 µm
ED-Window measured by Hitachi SEMHorizontal Position (0,-3)
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
160.0
-0.60 -0.40 -0.20 0.00 0.20 0.40
Focus [µm]
Crit
ical
Dim
ensi
on [ µ
m]
13.413.814.214.615.015.415.816.216.617.017.4
NO AF
NA 0.66 σ = 0.75/0.45
20.0
40.0
60.0
80.0
100.0
120.0
140.0
160.0
Crit
ical
Dim
ensi
on [µ m
]
With AF
- 0.15 µm - 0.05 µm 0.05 µm 0.15 µm
- 0.35 µm
- 0.25 µm
and with AF (assist features)
ConfidentialPAS 5500/850
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F= -0.2 F= -0.1 F= 0.0 F= +0.1 F= +0.270nm Isolated Lines : AltPSM
Alternating Phase Shift Mask - imaging for TFH
100 nm Isolated, AltPSMF=0.1umF=-0.2um F=0.2umF=-0.1um F=0.0um
F=0.0umF=-0.2um F=+0.2um50nm Isolated Lines : AltPSM
PAS 5500/1100
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Summary of Imaging capability
Imaging @ resolution limit for Iso ≠ Dense features, so for TFH manufacturing:
Advanced imaging with Aerial illuminatorAssist features to increase process window
ASML PAS5500 scanners for TFH manufacturing:Imaging of 110 - 100nm isolated features without assist featuresProven results down to 50nm using Phase Shift MaskMeasure and adjust for aberrations and Iso-focal tilt
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Outline
History of ASML systems in TFHReview of Imaging/Processing capabilitiesFlash vs. HDDFuture Roadmaps
Areal densityImaging requirements & solutions
Conclusions
/ Slide 16
Samsung’s press release May 23, 2005
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Storage capacity development (1 of 3)
0.1
1
10
100
1000
2004 2006 2008 2010
Stor
age
capa
city
(Gby
te)
flash (1 chip)
1.8” HDD2.5” HDD
3.5” HDD
1” HDD
Source: Nikkei Electronics October 2005
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Storage capacity development (2 of 3)
flash (memory card)
0.1
1
10
100
1000
2004 2006 2008 2010
Stor
age
capa
city
(Gby
te)
flash (1 chip)
1” HDD
2.5” HDD3.5” HDD
1.8” HDD
Multiple chips on a memory card & following the ITRS roadmap gives flash a CAGR advantage
Source: Nikkei Electronics October 2005
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flash (memory card)
Storage capacity development (3 of 3)
0.1
1
10
100
1000
2004 2006 2008 2010
Stor
age
capa
city
(Gby
te)
flash (1 chip)
3.5” HDD
This challenge can be taken up by technology roadmap acceleration
2.5” HDD
1.8” HDD1” HDD
Source: Nikkei Electronics October 2005, Flash memory announcements, Potential HDD scenario
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HDD & NAND Flash data storage applications
0200400600800
10001200140016001800
2004 2005 2006 2007 2008 2009 2010
Mill
ion
units
disk drives heads media
Source: Coughlin Associates October 2005
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HDD & NAND Flash data storage applications
June 2006: 1st
32 Gb SSD laptop sells at
> 3000$
Source: Samsung press release
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HDD & NAND Flash data storage applications
June 2006: 1st
32 Gb SSD laptop sells at
> 3000$
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Outline
History of ASML systems in TFHReview of Imaging/Processing capabilitiesFlash vs. HDDFuture Roadmaps
Areal densityImaging requirements & solutions
Conclusions
/ Slide 24
Advanced Storage Density Roadmap
2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
500
100
1000
200
year
Areal density [Gb/in2]
TFH technology involves steps in material science (GMR, TMR, high Bs) & scaling
Media technology involves steps in material science (high Ku, high Hc, HAMR) but is this has
limitations: patterning must be introduced
500 Gb/in2
1 Tb/in2
250 Gb/in2
2 Tb/in2
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ITRS roadmap = NAND flash technology roadmap
Today NAND Flash drives the ITRS roadmap
Market requirements are much tighter than ITRS, and as the technology and market leader, ASML has supported these tighter market requirements with the most advanced equipment
Source: ITRS Roadmap 2005
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ITRS & TFH technologyLeveraging similarities & bridging differences
Spec differences originate from different application of similar parameters
ITRS – Flash requirements parameter TFH
requirements
Dense L & S (thin resist) Resolution [nm]
Overlay [nm]
CD control [%, nm]
UDoF[um]
Field Stitching [nm]
Iso Lines (thin resist)Iso Trenches (thick resist)
Design rule related to CDReader – Writer positionWriter height – Lapping guides
Yield considerations Reader / Writer dimensions
ManufacturabilityProcess latitudeISO trench process
Not a requirement Backend rowbar processing
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ITRS & HDD Technology Roadmap2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
ITRS 2005
TFH
Media
Flash Half pitch
Litho technology
Reader width
ISO lines
Litho technology
Track width
Imprint technology
64 3657 51 45 40 32 28 25 23
ArF dryArF wet (NA & fluid generations)
EUV
BPM Volume (multiple template generations)
45 20*65
80 writer
2742 38 34 30 24 21 19 171625 23 20 18 14 13 11 10
MPU in resistMPU phys gate
4828
100 writer
25 patterned
media
16 patterned
media
29*
500 Gb/in2 1 Tb/in2250 Gb/in2
BPM Pilot & DTR
15*
KrF / ArF dry
PilotArF wet (NA & fluid generations)
2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
*: ASML estimate, based on bit width
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Technology roadmapConsiderations for TFH reader / iso lines imaging
Existing dry ArF resist stacks are able to support 32nm dense L/S, and likely also sub-20nm iso lines resist properties
image contrast
For dense L/S, contrast is cranked up by using higher NA; due to lack of diffraction pattern, a higher NA is less impor-tant for iso lines, but are att PSM and other mask tricks used to achieve contrast and smaller CD(u)
phys
ics
depth of focusFor iso lines, this can be the limiting factor; DoF is improved by using mask tricks (scatterbars, etc.) or by using immersion lithography
dose performance Better dose performance gives more slack in resist properties and image contrast
overlay
syst
em
Typically, a system / platform with improved imaging performance also exhibits improved overlay performance, due to associated IC requirements
focus performance Improved focus performance gives more slack in useable depth of focus
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System Overlay Roadmap
0
5
10
15
20
25
30
35
40
45
50
PAS5500
/300
PAS5500
/850
PAS5500
/1150
XT:1400
XT:1700-i
sing
le m
achi
ne o
verla
y [n
m]
* *
*: TFH manufacturing opportunity
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TWINSCAN™ XT:1700i*: Future platform for advanced Imaging
Illumination• Laser• Uniformity
IlluminationIllumination•• LaserLaser•• UniformityUniformity
6 kHz, 60W< 0.3 %6 kHz, 60W6 kHz, 60W< 0.3 %< 0.3 %
Overlay• Stage Repeatability• System Overlay• Matched Overlay
OverlayOverlay•• Stage RepeatabilityStage Repeatability•• System OverlaySystem Overlay•• Matched OverlayMatched Overlay
4 nm7 nm11 nm
4 nm4 nm7 nm7 nm11 nm11 nm
Throughput• 125 shots, 30mJ/cm2
ThroughputThroughput•• 125 shots, 30mJ/cm125 shots, 30mJ/cm22 > 122 WPH> 122 WPH> 122 WPH
Lens • Max Lens NA• Field Size• RMS• Astigmatism• Focal Plane Deviation• Resolution Annular • Resolution Dipolar• CDU 3σ• Distortion
Lens Lens •• Max Lens NAMax Lens NA•• Field SizeField Size•• RMSRMS•• AstigmatismAstigmatism•• Focal Plane DeviationFocal Plane Deviation•• Resolution Annular Resolution Annular •• Resolution DipolarResolution Dipolar•• CDU 3CDU 3σσ•• DistortionDistortion
1.226 x 33 mm1.4 nm20 nm30 nm50 nm45 nm3.0 nm5nm
1.21.226 x 33 mm26 x 33 mm1.4 nm1.4 nm20 nm20 nm30 nm30 nm50 nm50 nm45 nm45 nm3.0 nm3.0 nm5nm5nm
*: TFH manufacturing opportunity
/ Slide 31
TFH Technology requirements & equipment
TFH
Reader width
ISO lines
Litho technology
2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
45 2065
KrF / ArF dry
29
500 Gb/in2 1 Tb/in2250 Gb/in2
PAS5500/1150C
Overlay 10 9 8 6 6 5 4 4 3 2CDu <6% <6% <5% <5% <5% <5% <5% <5% <5% <5%
XT/1700F-I *
Successorplatform*
Pilot
Pilot
PilotArF wet (NA & fluid generations)
PAS5500/850D
15
*: TFH manufacturing opportunity
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Proven high throughput dual stage design
No metrology systems near lens for optimum
implementation of immersion shower head
Dry alignment &wafer mapping
(focus & levelling)
The dual stage of the XT platform provides advantages
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Summary & Conclusion
The PAS 5500 platform with dedicated TFH options has supported the areal density roadmap to dateASML has in-depth knowledge of this “Special Application” (dedicated business unit)The combination provides Lithography patterning solutions for the foreseeable future to the disk drive industryThe XT platform is the likely candidate for next generation (immersion) lithography in TFH applications
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Appendix: Acronyms
TFH Thin Film HeadDUV Deep UltraVioletDoF Depth of FocusWPH Wafers per hourPSM Phase Shift MaskIL Isolated LineAF Assist features