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PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM
ON SILICON MATERIALS SCIENCE AND TECHNOLOGY
SEMICONDUCTOR SILICON/1994
Editors
H.R. Huff
SEMATECH
Austin, Texas
W. BergholzSiemens AG Components Division
Regemsburg, Germany
K. Sumino
Tohoku UniversitySendai, Japan
ELECTRONICS DIVISION
Proceedings Volume 94-10
THE ELECTROCHEMICAL SOCIETY, INC.,
10 South Main St., Pennington, NJ 08534-2896
CONTENTS
PREFACE iii
PART 1 - - ULSI OVERVIEW
CHAPTER 1 - - ULSI OVERVIEW 1
INVITED: OVERVIEW OP ULSI TRENDS
P. Chatterjee and G. Larrabee 3
INVITED: OVERVIEW OF ULSI TRENDS IN JAPAN
E. Takeda 20
INVITED: DEEP LEVELS IN SILICON AND SILICON-
GERMANIUM ALLOYS
H. G. Grimmeiss and M. Kleverman 37
PART II - - SILICON PROCESS
CHAPTER 2 - - SILICON CRYSTAL GROWTH 53
INTRODUCTORY REMARKS - SILICON CRYSTAL GROWTH
S. Takasu and W. Zulehner 55
INVITED: DOUBLE LAYERED CZ (DLCZ) SILICON
CRYSTAL GROWTH
S. Kobayashi, H. Fujiwara, T. Fujiwara,T. Kubo, S. Inami, M. Olcui, S. Miyahara,
Y. Akashi, K. Kuramochi, Y. Tsujimotoand S. Okamoto 58
DENSITY VARIATION OF MOLTEN SILICON AND INFLUENCE
ON CRYSTAL PERFECTION
H. Sasaki, K. Terashima, E. Tokizaki
and S. Kimura 70
k-E HYDUODYMVMIC INTEGRATED THERMAL-CAPILLARY
MODEL FOR PREDICTING TEMPERATURE FIELD AND DOPANT
CONCENTRATION IN CZOCHRALSKI GROWTH OF SILICON
T. K. Kinney, D. E. Bornside, W. Zhou,R. A. Brown and K. M. Kim 80
si
INFLUENCE OF THE ROTATION IN THE CZ FURNACE UPON
THE OXYGEN CONCENTRATION IN THE Si CRYSTAL
S. Togawa, A. Yokotani, S. Kimura,
Y. Shiraishi and M. Imai 90
INFLUENCE OF POLYSILICON AND CRUCIBLE PURITY ON
THE MINORITY CARRIER RECOMBINATION LIFETIME OF
CZOCHRALSKI SILICON CRYSTALS
G. Borionetti, M. Porrini, P. Geranzani,
R. Orizio and R. Falster 104
SILICON FLOATING ZONE PROCESS: NUMERICAL MODELLING
OF RF FIELD, HEAT TRANSFER, THERMAL STRESS
AND EXPERIMENTAL PROOF FOR 4" CRYSTALS
H. Riemann, A. Ltldge, K. Bottcher, H-J. Rost,
B. Hallmann, W. Schrfider, W. Hensel
and B. Schleusener 111
EVALUATION OF FPDS AND COPS IN SILICON
SINGLE-CRYSTALS
H. Yamagishi, I. Fusegawa, K. Takano,
E. lino, N. Fujimaki, T. Ohta
and M. Sakurada 124
GATE OXIDE RELATED BULK PROPERTIES OF
OXYGEN DOPED FLOATING ZONE AND
CZOCHRALSKI SILICON
W. v. Ammon, A. Ehlert, U. Lambert,
D. Graf, M. Brohl and P. Wagner 136
FORMATION OF INTERSTITIAL OXYGEN STRIAT10NS IN
CZ GROWN SILICON SINGLE CRYSTALS
E. lino, K. Takano, I. Fusegawa and H. Yamagishi 148
OXYGEN PRECIPITATION BEHAVIOR IN SILICON DURING
CZOCHRALSKI CRYSTAL GROWTH
M. Hourai, T. Nagashima, E. Kajita, S. Miki,
S. Sumita, M. Sano and T. Shigematsu 156
DISTRIBUTION OF AS-GROWN DEFECTS IN A SILICON
SINGLE CRYSTAL
K. Nakajima, J. Furukawa, H. Furuyaand T. Shingyouji 168
THE GROWTH OF SILICON SINGLE CRYSTALS BY THE
MAGNECTIC FIELD APPLIED CONTINUOUS CZ (CMCZ)METHOD
Y. Arai, M. Kida, N. Ono, K. Abe, N. Machida,H. Furuya and K. Sahira 180
INVITED:
INVITED:
xU
CHAPTER 3 -- WAFER PREPARATION 193
INTRODUCTORY REMARKS - WAFER PREPARATION
R. Takiguichi and P. 0. Hahn 195
INVITED: MANUFACTURING PROCESSES FOR ADVANCEDSILICON ULSI WAFERS
E. Steffen, J. Schandl, H. Lundt
and J. Junge 197
INVITED: THE DUCTILE MODE GRINDING TECHNOLOGY
APPLIED TO SILICON WAFERING PROCESS
T. Abe, Y. Nakazato, M. Dalto,A. Kanai and M. Miyashita 207
SUBSURFACE DAMAGE OF ABRADED SILICON WAFERS
H. Lundt, M. Kerstan, A. Huber and P. 0. Hahn 218
PERFECT SILICON SURFACE BY HYDROGEN-ANNEALING
H. Kubota, M. Numano, T. Amai, M. Miyashita,S. Samata and Y. Matsushita 225
SURFACE CHARACTERIZATION OF HEAT TREATED SILICON
WAFERS
D. M. Lee, D. Ruprecht, D. Hymes and W. Huber 237
STUDY OF TRANSITION METAL CONTAMINATION CAUSED
BY SC-1 TREATMENT USING TRXRF
Y. Mori, K. Uemura, K. Shimanoe and T. Sakon 248
CHAPTER 4 -- THIN FILMS, INTERFACES AND EPITAXY 261
INTRODUCTORY REMARKS -- THIN FILMS, INTERFACES
AND EPITAXY
T- 0. Sedgwickand J. 0. Borland 2 63
INVITED: CLUSTER TOOLS -HARDWARE AND PROCESS
INTEGRATION
J. R. Hauser 265
INVITED: CHEMISTRY OF SiH2CL2 ON SILICON SUR¬
FACES: ADSORPTION SPECIES, ADSORPTION
AND DESORPTION KINETICS AND MODELING
OF Si CVD GROWTH
P. A. Coon, M. B. Robinson, M. L. Wise,A. C. Dillon and S. M. George 277
xiii
DECOMPOSITION OF POLY-Si/Si02 UNDER HYDROGEN PRE-
BAKE IN A REDUCED PRESSURE EPITAXIAL REACTOR
M. Y. Hong, N. D. Theodore, J. Steele
and Y-C. See 288
LOW TEMPERATURE ATMOSPHERIC PRESSURE CHEMICAL
VAPOR DEPOSITION FOR EPITAXIAL GROWTH OF SiGe
BIPOLAR TRANSISTORS
T. O. Sedgwick, J. N. Burghartzand D. A. Grtitzmacher 298
STRUCTURAL AND ELECTRICAL PROPERTIES OF POLY-
SILICON FILMS DEPOSITED AT 5 mbar IN A RTP
REACTORB. Semmaehe, S. Kaddour-Krieger, M. Lemiti,
D. Barbier, S. Fayeulle and A. Laugier 311
A TWO-STEP POLYSILICON DEPOSITION PROCESS FOR
GRADED DOPED GATES
E. Ibok, B. Moore and S. Garg 322
INVITED: THE LIMITATION OF EXTRINSIC DEFECT
DENSITY ON THIN GATE OXIDE SCALING
IN VLSI DEVICES
B. B. Triplett 333
DIELECTRIC DEGRADATION OF SILICON DIOXIDE FILMS
CAUSED BY METAL CONTAMINATIONS
M. Takiyama, S. Ohtsuka, S. Hayashiand M. Tachimori 346
MICROSTRUCTURE, ELECTRICAL PROPETIES AND PASSI¬
VATION OF DEFECTS AT THE SILICON-SILICON-DIOXIDEINTERFACE
A. Correia, D. Ballutaud and J.-L. Maurice 358
STRUCTURE AND MORPHOLOGY OF "D-DEFECTS" IN CZ Si
J-G. Park, H. Kirk, K-C. Cho, H-K. Lee, C-S. Lee
and G. A. Rozgonyi 370
A MODEL FOR ROOM-TEMPERATURE WET OXIDATION OFSILICON
G. F. Cerofolini, L. Meda and R. Falster 379
INVITED: SILICON-ON-INSULATOR TECHNOLOGY: OUTLOOKFOR BONDED WAFERS
S. S. Iyer, T. 0. Sedgwick, P. M. Pitnerand M. J. Tejwani 3 91
xlv
INTERFACIAL STRUCTURE OF BONDED SILICON WAFERSM. Reiche, U. G6sele and Q.-Y. Tong 4 08
VOID FORMATION AND ANNIHILATION IN SILICONDIRECT WAFER BONDING
F. Secoo d'Aragona and H-D. Chiou 420
CHARACTERIZATION OF THIN-FILM BESOI USING A CVD
Sil-X-y"Gex"BV ETCH STOP
C. A. Desmond, C. E. Hunt and T. Wetteroth 432
EPITAXIAL GROWTH ON POROUS Si FOR A NEW BOND AND
ETCH-BACK SOI
N. Sato, K. Sakaguchi, K. Yamagata,Y. Fujiyama and T. Yonehara 443
CHAPTER 5 -- SILICON-BASED MATERIALS FOR LIGHT
EMISSION 455
INTRODUCTION REMARKS: SILICON-BASED MATERIALS FOR
LIGHT EMISSION
D. L. Canham and N. Koshida 457
INVITED: LIGHT EMISSION IN SILICON
N. Matsumoto 460
INVITED: LUMINESCENCE OF SILICON MATERIALS
L. E. Brus 470
INVITED: LIGHT EMISSION FROM POROUS SILICONUNDER PHOTO-AND ELECTRO-EXCITATION
A. Bsiesy, J. C. Vial, F. Gaspard,R. H^rino, M. Ligeon, F. Muller
and R. Romestain 475
INVITED: ERBIUM-DOPED SILICON FOR INTEGRATED
OPTICAL INTERCONNECTSL. C. Kimerling, D. M. Koker, B. Zheng,
F. Y. G. Ren and J. Michel 486
INTENSE ROOM TEMPERATURE LIGHT EMISSION IN POROUS
SILICON: FROM LESS THAN 450 nm TO BEYOND 1.5 (im
P. M. Fauchet, C. Peng, L. Tsybeskov, J. Vandyshev,A. Dubois, A. Raisanen, T. E. Orlowski,
L. J. Brillson, J. E. Fouquet, S. L. Dexheimer,J. M. Rehm, G. L. McLendon, E. Ettedgui, Y. Gao,
F. Seiferth and S. K. Kurinec 499
ELECTRONIC AND OPTOELECTRONIC ANALYSES OF VISIBLE
LUMINESCENCE MECHANISM OF POROUS SILICON
H. Koyama, T. Oguro, T. Ozaki, Y. Suda
and N. Koshida 511
WHAT'S NEW WITH THERMALLY OXIDIZED POROUS SILICON?
V. Petrova-Koch, T. Muschik, D. Kovalev
and F. Koch 523
IN-SITU X-RAY STUDY OF THE WETTING OF POROUS SILICON
D. Bellet, G. Dolino, M. A. Hory, I. Mihalcescu
and R. Romestain 533
OPTICALLY INDUCED ABSORPTION IN POROUS SILICON AND
ITS APPLICATION TO LOGIC GATES
T. Matsumoto, T. Futagi, N. Hasegawa, H. Mimura,
and Y. Kanemitsu 545
THEORY OF SPIN AND PHONON STRUCTURES IN OPTICAL
SPECTRA OF Si NANOCRYSTALST. Takagahara 552
LIGHT EMISSION AND RELATED MATERIALS PROPERTIES OF
SILOXENE AND Si-BASED ZEOLITES
H. C. Mogul, J. Xu, A. J. Steckl, S. J. Clarson,and C. L. Hoffmann 563
PHYSICAL CHARACTERIZATION OF SILICON AND POROUS
SILICON BASED ELECTROLUMINESCENT DIODES
P. A. Badoz, L. Garchery and A. Halimaoui 569
CHAPTER 6 -- POINT AND EXTENDED DEFECTS 57 5
INTRODUCTORY REMARKS - POINT AND EXTEND DEFECTS
U. Gosele and W. Schr6Ler 577
INVITED: SIMULATION OF DIFFUSION PROCESSES IN
SILICON FOR ULSI APPLICATIONS
M. Orlowski 579
EQUILIBRIUM CONCENTRATIONS OF INTRINSIC POINT
DEFECTS IN SILICON DETERMINED BY ZINC DIFFUSION
H. Bracht, N. A. Stolwijk and H. Mehrer 593
DIRECT MEASUREMENT OF SELF-INTERSTITIAL CONCEN¬
TRATIONS IN GOLD DIFFUSED SILICON
A. DSller, M. Seibt and W. SohrSter 603
xvi
SIMULATION OF BURIED LAYER EXPERIMENTS CONTAIN¬ING ALL FOUR DOPANT SPECIES
K. Ghaderi, G. Hobler, M. Budil, H. PStzl,P. Pichler, H. Ryssel, W. Hansch, I. Eisele,
C. Tian and G. Stingeder 613
POINT DEFECT DYNAMICS IN SILICON AND THE CON¬
NECTION BETWEEN MICRODEFECT FORMATION AND
OPERATING CONDITIONS IN THE BULK GROWTH OF
SILICON
T. Sinno and R. A. Brown 625
DISTRIBUTION OF GROWN-IN CRYSTAL DEFECTS FORMED
BY POINT DEFECT DIFFUSION
R. Habu, A. Tomiura and H. Harada 635
INVITED: EBIC INVESTIGATIONS OF EXTENDED DEFECTS
AND THEIR INTERACTIONS WITH IMPURITIES
P. R. Wilshaw and T. S. Fell 647
CATHODOLUMINESCENCE AND EBIC STUDY ON DISLOCATIONS
IN Si CRYSTALS
T. Sekiguchi, S. Kusanagi, B. Shen and K. Sumino 659
ON THE ELECTRICAL ACTIVITY OF OXYGEN-RELATED
EXTENDED DEFECTS IN SILICON
J. Vanhellemont, E. Simoen, G. Bosnian, C. Claeys,
A. Kaniava, E. Gaubas, A. Blondeel
and P. Clauws 670
OBSERVATION OF RING-OSF NUCLEI IN CZ-Si USING SHORT
TIME ANNEALING AND IR LIGHT SCATTERING TOMOGRAPHY
K. Marsden, S. Sadamitsu, M. Hourai,S. Sumita and T. Shigematsu 684
CHARACTERIZATION OF TRANSITION METAL-DOPED
SILICON CRYSTALS PREPARED BY FLOAT ZONE TECHNIQUEH. Lemke 695
KINETICS OF DOPANT PRECIPITATION IN SILICON
S. T. Dunham 711
SELF-INTERSTITIAL AGGLOMERATION IN ION-IMPLANTED
SILICON
M. Seibt, J. Imschweiler and H.-A. Hefner 720
MORPHOLOGY CHANGE OF OXIDE PRECIPITATES IN CZ
SILICON DURING TWO-STEP ANNEALING
K. Sueoka, N. Ikeda, T. Yamamoto and S. Kobayashi 732
xvil
INFLUENCE OF COOLING CONDITION DURING CRYSTAL
GROWTH OF CZ-Si ON OXIDE BREAKDOWN PROPERTY
T. Iwasaki, Y. Tsumori, K. Nakai, H. Haga,
K. Kojima and T. Nakashizu 744
INTERACTION OF POINT AND EXTENDED DEFECTS IN
SILICON: THEIR INFLUENCE ON THE POLYCRYSTALLINE
SILICON SUBSTRATE QUALITY FOR HIGH EFFICIENCY SOLAR
CELLS
S. Pizzini, M. Acciarri, S. Binetti, S. Acerboni
and C. Savigni 756
CHAPTER 7 -- GETTERING PHENOMENA 7 69
INTRODUCTORY REMARKS -- GETTERING PHENOMENA
E. R. Weber and H. Tsuya 771
INVITED: GETTERING PHENOMENA IN SILICON
D. Gilles and H. Ewe 77 2
INVITED: GETTERING TECHNIQUES OF HEAVY METAL
IMPURITIES IN SILICON
M. Sano, S. Sumita, T. Shigematsuand N. Fujino 784
BASIC MECHANISM OF INTERNAL GETTERING: HETEROGENEOUS
PRECIPITATION OF COBALT AND NICKEL IN CZ-SILICON
H. Ewe, D. Gilles, S. K. Hahn, M. Seibt
and W. Schrater 7 96
GETTERING OF METAL IMPURITIES BY CAVITIES IN SILICON
S. M. Myers, D. M. Follstaedt, D. M. Bishopand J. W. Medernach 808
IRON GETTERING EFFICIENCY BY A POLYSILICON LAYER
IN P-TYPE CZ SILICON
D. M. Lee, K. Mishra, W. Huber, S. Chevacharoenkul,S. P. Choi and I. H. Doh 820
INVITED: GETTERING PHENOMENA IN EPITAXIAL
SILICON STRUCTURES
F. G. Kirscht 831
ON THE ORIGIN OF INTERNAL GETTERING SUPPRESSIONIN LOW CARBON CZ SILICON BY RAPID THERMAL
ANNEALING
C. Maddalon-Vinante, J. p. Vallard and D. Barbier 844
ULTRASOUND TREATMENT OF CZ-Si WITH "RING DEFECTS"S. Ostapenko, N. Ikeda and F. Shimura 856
xviJi
INVITED: LOW TEMPERATURE IMPURITY GETTERING FORGIGA-SCALE INTEGRATED CIRCUIT TECHNOLOGY
G. A. Rozgonyi, S. Koveshnikov
and A. Agarwal 868
EFFECTS OF INTRINSIC GETTERING ON RAM CORRUPTION
AND DEVICE YIELD OF A CMOS PROCESS
L. A. Cerra and H-D. Chiou 884
COMPUTER SIMULATION OF THE INFLUENCE OF POINT
AND EXTENDED DEFECTS ON THE PRECIPITATION OF
OXYGEN DURING RAPID THERMAL PROCESSING
J. Esfandyari, S. Senkader, G. Hobler,H. Potzl and B. Murphy 896
CONTROLLING THE OXYGEN PRECIPITATION IN NON-EPI
WAFERS TO PREVENT CHARGE LEAKAGE FROM DRAM
TRENCH CAPACITORS
A. E. Stephens 908
DIFFUSION-SEGREGATION EQUATION AND SIMULATION
OF THE DIFFUSION-SEGREGATION PHENOMENA
T. Y. Tan, R. Gafiteanu and U. M. Gosele 920
CHAPTER 8 -- INTEGRATED CIRCUIT PROCESS INTEGRATION 931
INTRODUCTORY REMARKS -- INTEGRATED CIRCUIT PROCESS
INTEGRATION
R. Sivan and K. Yamabe 933
INVITED: MICRODEFECTS AND IMPACT ON IC PROCESS
INTEGRATION
A. Ohsawa, A. Hara, M. Aoki,M. Koizuka and T. Fukuda 93 6
INVITED: MATERIALS REQUIREMENTS FOR FUTURE
SEMICONDUCTOR TECHNOLOGY
T. E. Seidel, P. K. Vasudev
and T. Stanley 947
INVITED: REVIEW OF X-RAY LITHOGRAPHY
G. K. Celler 962
GATE OXIDE QUALITY RELATED TO BULK PROPERTIES AND
ITS INFLUENCE ON DRAM DEVICE PERFORMANCE
R. Winkler and G. Behnke 973
XlK
N+-P JUNCTION LEAKAGE CURRENT GENERATED BY MICRO-
DEFECTS IN DENUDED ZONE OF 64Mb DRAM SILICON
SUBSTRATESM. Horikawa, T. Mizutani, T. Suzuki and K. Arai 987
EVALUATION OF PN JUNCTION LEAKAGE CURRENT IN
VARIOUS IG PROCESSED Si WAFERS
H. Abe, Y. Murakami, H. Koya, I. Suzuki
and H. Suga 997
A DISLOCATION FORMATION MODEL OF TRENCH-INDUCED
DISLOCATIONS (TIDs) IN DYNAMIC RANDOM ACCESS
MEMORIES (DRAMs)M. Dellith, G. R. Booker, B. 0. Kolbesen,
W. Bergholz and F. Gelsdorf 1008
DEGRADATION OF SILICON NITRIDE INTEGRITY DURING
COBALT SILICIDE PROCESSING
G. R. Hueckel, T. Nguyen and II, L. Ho 1020
EFFECT OF OXYGEN ON POINT DEFECT INJECTION DURING
SILICIDATION OF TITANIUM
J, Chen, H. G. Robinson, S. B. Herner
and K. S. Jones 1029
EFFECTS OF LOW-DOSE SILICON, CARBON AND OXYGEN
IMPLANTATION DAMAGE ON DIFFUSION OF PHOSPHORUS
IN SILICON
S. Chaudhry and M. E. Law 1041
SIMULATION OF TEMPERATURE DISTRIBUTIONS DURING
FAST THERMAL PROCESSING
M. Schrems, A. Yamamoto, Y. Mikata, K. Usuda
and K. Nakao 1050
CHAPTER 9 -- DIAGNOSTIC ANALYSIS 10 65
INTRODUCTORY REMARKS - - DIAGNOSTIC ANALYSIST. J. Shaffner and S. Kawado 1067
INVITED: CONTACTLESS SEMICONDUCTOR MEASUREMENTS
D. K. Schroder 1071
NON-CONTACTING AND NON-DESTRUCTIVE MEASUREMENTS
OF PHOTOCONDUCTIVITY TRANSIENT USING UV Him-WAVE
TECHNIQUE---EVALUATION OF DZ WIDTH, EPITAXIAL LAYER
CONTAMINATION AND SURFACE PROPERTY OF Si WAFER
Y.-i. Ogita, K. Yakushiji and N. Tate 1083
XX
PHOTOLUMINESCENCE MEASUREMENTS OF TRACE AMOUNTS OF
TRANSITION METAL IMPURITIES IN SILICON CRYSTAL
M. Nakaitmra and T. Suzuki 1093
MAPPING OF DEFECT RELATED SILICON BULK AND
SURFACE PROPERTIES WITH THE ELYMAT TECHNIQUEJ. Carstensen, W- Lippik and H. Ffill 1105
DETECTION OF PROCESS INDUCED DISLOCATIONS IN SILICON
J. L. Benton, G. S. Higashi and T. Boone 1117
INVITED: DETECTION OF DEFECTS IN SILICON
USING SYNCHROTRON RADIATION
Y. Sugita, S. Iida and H. Kawata 1123
IMAGING-PLATE PLANE-WAVE X-RAY TOPOGRAPHY AND
ITS APPLICATION TO CHARACTERIZATION OF LATTICE
DISTORTION IN AS-GROWN SILICON
Y. Kudo, K. Y. Liu, S. Kojima, S. Kawado,and T. Ishikawa 1135
DISTRIBUTION OF MICROCRYSTALS IN AMORPHOUS
Si02 ON Si(001) SURFACE
I. Takahashi and J. Harada 1147
INVITED: MICROROUGHNESS OF SILICON WAFERS
W. M. Bullis 1156
THE EFFECT OF H2 ANNEALING ON THE Si SURFACE AND
ITS USE IN THE STUDY OF ROUGHENING DURING WET
CHEMICAL CLEANING
S. Verhaverbeke, T. Futatsuki, R. Messoussi
and T. Ohmi 1170
SURFACE ROUGHNESS OF Si WAFERS: CORRELATING AFM
AND HAZE MEASUREMENTS
I. J. Malik, K. Vepa, S. Pirooz, A. C. Martin
and L. W. Shive 1182
APPENDICES
APPENDIX 1 - AUTHOR INDEX
APPENDIX 2 - SUBJECT INDEX
x:ci