Post on 14-Mar-2020
transcript
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
Case : MTO-3P
HFX SeriesSwitching Power Transistor
3A NPN
2SC4235(T3W80HFX)
Absolute Maximum Ratings Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55～150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7 VCollector Current DC IC 3 A
Collector Current Peak ICP 6Base Current DC IB 1 A
Base Current Peak IBP 2
Total Transistor Dissipation PT Tc = 25 80 W
Mounting Torque TOR (Recommended torque : 0.5N･m) 0.8 N･m
Electrical Characteristics (Tc=25) Item Symbol Conditions Ratings Unit
Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.1A Min 800 V
Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA
ICEO Max 0.1
Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA
DC Current Gain hFE VCE = 5V, IC = 1.5A Min 8
hFEL VCE = 5V, IC = 1mA Min 7
Collector to Emitter Saturation Voltage VCE(sat) IC = 1.5A Max 1.0 V
Base to Emitter Saturation Voltage VBE(sat) IB = 0.3A Max 1.5 VThermal Resistance θjc Junction to case Max 1.56 /WTransition Frequency fT VCE = 10V, IC = 0.3A TYP 8 MHzTurn on Time ton IC = 1.5A Max 0.5Storage Time ts IB1 = 0.3A, IB2 = 0.6A Max 3.5 μsFall Time tf RL = 170Ω, VBB2 = 4V Max 0.3
1
10
10
0
2S
C4235
0.0
01
0.0
10.1
1
0.0
50
.50
.22
05
05
22
00
50
02
00
05
00
0
VC
E =
5V
0.0
20.0
50.5
0.2
20
52
0.0
05
0.0
02
Tc
= 1
50
°C
10
0°C
50°
C
25°
C
0°C −2
5°C
−55°
C
hF
E -
I C
6
Colle
ctor
Curr
ent
IC [A
]
DC Current Gain hFE
0
0.51
1.52
2.53
2S
C4235
0.0
10.1
100.5
11.5
22.5
3
0.0
50
.50
.22
05
05
22
00
50
02
00
05
00
0
0.0
20.0
50.5
0.2
20
52
0.0
05
0.0
02
I C =
0.3
A0.7
5A
1.5
A3.0
A4.5
A
Tc
= 2
5°C
Satu
ratio
n V
olta
ge
I C =
0.3
A
0.7
5A
1.5
A3.0
A4.5
A
2
Base
Curr
ent
IB [A
]
Collector-Emitter Voltage VCE [V]
Base-Emitter Voltage VBE [V]
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3
2SC4235
IB1 = 0.2ICIB2 = 0.4ICVBB2 = 4VVCC = 250VTc = 25°C
ts
ton
tf
Switching Time - IC
Collector Current IC [A]
Sw
itchin
g T
ime
t SW
[µ
s]
0.01
0.1
1
10
0 50 100 150 200 250 300
2SC4235
IC = 1.5AIB1 = 0.3AIB2 = 0.6AVBB2 = 4VTc = 25°C
ts
ton
tf
Switching Time - VCC
Collector Voltage VCC [V]
Sw
itchin
g T
ime
t SW
[µ
s]
0.01
0.1
1
10
0 50 100 150
2SC4235
IC = 1.5AIB1 = 0.3AIB2 = 0.6AVBB2 = 4VRL = 167Ω
ts
ton
tf
Switching Time - Tc
Case Temperature Tc [°C]
Sw
itchin
g T
ime
t SW
[µ
s]
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3
2SC4235
IB1 = 0.2ICIB2 = 0.4ICVBB2 = 4VVCE (clamp) = 300VTc = 25°C
ts
tf + tvs
tf
L-Load Switching Time - ICS
witc
hin
g T
ime
t SW
[µ
s]
Collector Current IC [A]
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3
2SC4235
IB1 = 0.2ICIB2 = 0.4ICVBB2 = 4VVCE (clamp) = 300VTc = 100°C
ts
tf + tvs
tf
L-Load Switching Time - IC (At High Temperature)S
witc
hin
g T
ime
t SW
[µ
s]
Collector Current IC [A]
Tra
nsie
nt T
herm
al I
mpe
danc
e
0.0
01
0.010.
11
10
2SC
4235
10-
41
0-3
10-
21
0-1
100
101
0.05
0.5
0.2
20
50
52
20
05
00
20
00
50
00
0.02
0.05
0.5
0.2
20
52
0.0
05
0.0
02
Tim
e t
[s
]
Transient Thermal Impedance θjc(t) [°C/W]
Forward Bias SOA
0.01
0.1
1
1 10 100
2SC4235
50µs
Tc = 25°CSingle Pulse
150µs1ms10ms
DC
6
800
Collector-Emitter Voltage VCE [V]
Col
lect
or C
urre
nt
I C [
A]
PT limit
IS/B limit
0
20
40
60
80
100
0 50 100 150
2SC4235 Collector Current DeratingC
olle
ctor
Curr
ent
Dera
ting
[%]
VCE = fixed
PT limit
IS/B limit
Case Temperature Tc [°C]
0
1
2
3
4
5
6
0 200 400 600 800 1000 1200
2SC4235
IB1 = 0.25ICIB2 = 0.45AVBB2 = 5VTc < 150°C
Reverse Bias SOA
Collector-Emitter Voltage VCE [V]
Colle
ctor
Curr
ent
IC [A
]