Post on 26-Aug-2020
transcript
P. 0 © 2018 ROHM Co.,Ltd.
Id2
IL1
PFC 3-Phase 4-Wire Vin=115V/200V Pin=25kW
Input : Vin=115Vac
Output : Vo=200Vdc+200Vdc
Gate Drive : Vd=10V
R source=2Ω
R sink=1Ω
Q1~Q6 : R6076MNZ1
MOSFET(600V 76A)
L1,L2,L3 : 200uH
Tj=100℃
PFC 3-Phase 4-Wire Vin=115V/200V Pin=25kW Simulation Circuit
Io1
IL2
IL3
Id1
Io2
P. 1 © 2018 ROHM Co.,Ltd.
Simulation Waveform 1
Io, IL (0~20.00ms) Expansion (14.00m~14.16ms) Vin=115Vac Pin=25kW Vo=200Vdc+200Vdc Tj=100℃
Red : Io1(A) (14.00m~14.16ms)
Green : Io2(A)
Blue : IL3(A) Green : IL2(A)
Red : IL1(A)
Green : Io2(A)
Red : Io1(A)
Blue : IL3(A)
Green : IL2(A)
Red : IL1(A)
P. 2 © 2018 ROHM Co.,Ltd.
Simulation Waveform 2
Q1_Loss1,Pd1,Vds1,Id1 Vin=115Vac Pin=25kW Vo=200Vdc+200Vdc Tj=100℃
Loss1(J)
Pd1(kW)
Vds1(V)
Id1(A)
Switching Loss Conduction Loss
Q2_Loss2,Pd2,Vds2,Id2 Vin=115Vac Pin=25kW Vo=200Vdc+200Vdc Tj=100℃
Loss2(J)
Pd2(kW)
Vds2(V)
Id2(A)
Conduction Loss
P. 3 © 2018 ROHM Co.,Ltd.
0
100
200
-40 -20 0 20 40 60 80 100 120 140
Po
wer
Dis
sip
ati
on
(W
)
Tj(℃)
90
92
94
96
98
100
-40 -20 0 20 40 60 80 100 120 140
Eff
icie
ncy (
%)
90
92
94
96
98
100
5 10 15 20 25 30
Eff
icie
nc
y (
%)
0
100
200
5 10 15 20 25 30
Po
wer
Dis
sip
ati
on
(W
)
Pin(kW)
Efficiency, Power Dissipation
Pd(W) Power Dissipation
Pin : 10kW~25kW Vin=115Vac Vo=200Vdc+200Vdc Tj=100℃
Efficiency : 100×Po/Pin
Efficiency (%)
Efficiency : 100×Po/Pin
Pd(W) Power Dissipation
Tj : -25℃~125℃ Vin=115Vac Pin=25kW Vo=200Vdc+200Vdc
Efficiency (%)
Q1~Q6
Q1~Q6