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ESE seminar Photodetectors - Sipm, P. Jarron - F. Powolny 1
PHOTODETECTORSAND
SILICON PHOTO MULTIPLIER
ESE seminarPierre Jarron, Francois Powolny15 October 2008
OUTLINEOUTLINE2 Brief history and overview of photodetectors
Types of photodetectorsTypes of photodetectorsphototubesSemiconductor devicesAvalanche or secondary electron multiplicationAvalanche photodiode
Introduction to silicon PMGeiger mode avalanche semiconductor devicesg
Principle of silicon PMProcess and technologiesBasic architectureBasic architecture
Performance of silicon PMQuantum resolution, detection efficiencyTi i l tiTiming resolution
Readout electronicsApplications
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
Historical beginning of photodetectorsthe photoelectric effectthe photoelectric effect
3
When Einstein published his seminal 1905 paper on the particle theory of light, Millikan was convinced p p p p y g ,that it had to be wrong, because light was considered as purely a wave.
He undertook a long experimental program to test Einstein's theory.
His results confirmed Einstein's predictions in every detail, but Millikan was not convinced of Einstein's radical interpretation, and as late as 1916 he wrote, "Einstein's photoelectric equation... cannot in my p , , p q yjudgment be looked upon at present as resting upon any sort of a satisfactory theoretical foundation," even though "it actually represents very accurately the behavior" of the photoelectric effect.
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
Photodetectors typeyp4
Goal: converting the energy of absorbed photons into a measurable electrical signalBasic parameters: single photon or not, speed, gain, quantum efficiency, QE f(wavelength)
3 types
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
Photoelectric tubessingle photon detection
5
All based on photocathodeDevices based on electron multiplicationp
Dynodes based photoelectric tube (PMT)Micro channel plate (MCP) based photoelectric tube
Device based on electron bombarded silicon sensorHybrid photoelectric detector
PrincipleGeneration of photoelectron with a photocathode
R. Millikan experimental deviceElectron multiplication with secondary electron
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
Avalanche in vacuum or ionization in silicon
Photo-Multiplier-Tube (PMT) history6
Who invented the PMTIt is a Russian physicist and engineer L.A Kubetsky
In August 1930, he proposed a device with a photocathode and a series of dynodes multiplying the primary electron with secondary l i ielectron emission
Th fi h l i li b i h ld “K b k ’ b i 1930
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
The first photomultiplier tube in the world: “Kubetsky’s tube in 1930But for others the first PMT was developed by V.K.Zworykin et al. at RCA in 1936
The photomultiplier tubep p7
Photocathode, work function
Typical characteristics• Photocathode quantum efficiency: 30% (70% of photons are not converted)• Signal gain up to 108
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
• Dynode voltage: 1000-2000V
Microchannel plate (MCP)p ( )8
MCP i i l Ultra fast Single Photon detector : pixilated MCP- PMTDone in collaboration with Space Research center Leicesterand Photek for time resolved fluorescence CERN TT project
MCP principle
h t th d
ΔV provides e- acceleration : defines transit time photocathode to MCP and e- energy for 1st collision in the MCP
Gain : ~ 105 to 106
photocathode
MCPChevron stack
z
d1
z or t
Emitted e- :Distributed in time (TTS) and in energy
Position at t = t1
Position at:t = t1+time1 Vacuum
V1
CERN (Rui)Multi-anode on multilayer ceramic
xdres εres Resistive layer
ElectrodeV2
~ 5 10^5 e-
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
Image intensifier~ 2 10^6 e-
20 ps time resolution single photon detection
HPD CERN developmentp9
HPD principleUS HPD patent 1975was called electron bombarded device
LHCb-RICH HPD T. Gys
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
X HPD C. Joram
Semiconductor photodetectorsp10
Ph t d t b d d ti it i tiPhotoconductors: based on conductivity variationsPhotodiodes: based on junction, heterojunctions
PN-diodes photovoltaic (ex: solar cells)PN-diodes, photovoltaic (ex: solar cells)PIN-diodesPhototransistorCCDSchottky photodiode (metal-semiconductor)Linear avalanche photodiodes(APD)Linear avalanche photodiodes(APD)Geiger mode avalanche APDSilicon PM
Band gap engineered photodetectorsQuantum well infrared photodetector(QWIP)Stair case a alanche photodiode
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
Stair case avalanche photodiode
Photoconductor11
Optical electron-hole pair generation changes the conductivity of a semiconductor material
Materials: Si, Ge, PbSe, PbS, CdSe, HgCdTe, PbSnTe, InGaAs(mostlyIR)Materials: Si, Ge, PbSe, PbS, CdSe, HgCdTe, PbSnTe, InGaAs(mostlyIR)
Applications: security alarm, street lights, IR-astronomy, IR-spectroscopy
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
Photovoltaic detector12
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
PN photodiodep13
Reverse biased PN junction
Depleted MOS structureC-band
used in CCD
V-band
Reversed bias
Depleted silicon depth
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
Avalanche photodiodep14
Avalanche in silicon P-N junctionKnown since 45 years
Journal of applied physicsVol.32-6, Vol. 34 – 6
But very slow developmentBut very slow development
I h photocurrentIph photocurrent
λ photon wavelength
c photon velocity
h Planck's constant
q electronic charge
Pinincident optical
power (W)
M photoelectric gain
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
p g
η quantum efficiency
Single photon avalanche photodiode15
SPAD G i l h dSPAD, Geiger avalanche modeSingle photon detection, binary deviceNoise: single thermal electronBiased above breakdown VBD
Gain Very fast device : discharge of CD on the
qCVVgain APDBDa ).( −=
Very fast device : discharge of CD on the external low resistance
OFFphoton
Quenching
ON
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. PowolnyIn Sensors 2008, 8, 4636-4655
Comparison of S-P photodetectorsp p16
PMT Linear-mode APD Geiger-mode APD
Photoelectric gain 10,000–1,000,000 10–100 10,000–300,000
Excess noise factor <2 >2 2
Max. detection probability
<25% <50% 25%–100%
Operating temperature 240°K 240°K 300°K
Voltage bias >1000 V 30–500 V 30–70 V Detection speed <1 ns pulses >20 ns pulses <1 ns pulses e ec o speed s pu ses 0 s pu ses s pu sesAfterpulsing No no yes Wavelength 0.3-1.6 µm 0.4-1.1 µm 0.4-1.1µm Magnetic field Yes No No susceptibility Reliability <1000 hr. <100,000 hr >1000 hr. ?Large array capability Yes MAPMT yes ?
15 October 2008ESE seminar photodetectors - Sipm, P. Jarron - F. Powolny
Crosstalk N/A No Poor
NINO 0.25 circuit used in ALICE TOF
SPAD/Sipm signal 20-50 fC/single photon avalancheSPAD/Sipm signal 20 50 fC/single photon avalancheGain 2.105 , 1.5 ns,
Current mode input stageCommon gate configurationNoise 3000 e-NINO works like a QTC or TOTJitter 10 ps rms for 100 fC
NINO Block diagram
×6 ×6 ×6 ×6
Response to ultra fast analogue pulse
NINO 0.13 results
5 to 40 fC