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All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK2886
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
2
S
DGD
G
R2
10MEGR1
10M CGD
+
-
+
-
S1
S
D
Q1
+
-
+
-
S2
S
U12SK2886
Circuit Configuration
Equivalent Circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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MOSFET MODEL
PSpice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A) gfs (S)
%Error Measurement Simulation
2 10.150 10.203 0.52
5 15.460 15.495 0.23
10 20.910 20.950 0.19
20 27.770 27.832 0.22
50 39.150 39.022 -0.33
100 48.450 48.506 0.12
VDS=10V
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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V_VGS
0V 2V 4V 6V 8V 10V 12V
I(U1:2)
0A
20A
40A
60A
80A
100A
120A
VGS
V1
10V
0
U12SK2886
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
6
Comparison Graph
Circuit Simulation result
Comparison table
ID (A) VGS (V)
%Error Measurement Simulation
1 2.442 2.379 -2.58
2 2.560 2.493 -2.63
5 2.785 2.725 -2.15
10 3.091 2.998 -3.00
20 3.485 3.407 -2.25
50 4.300 4.294 -0.13
100 5.520 5.428 -1.66
VDS=10V
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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VGS
10V
0
V1
U12SK2886
V_V1
0V 100mV 200mV 300mV 400mV
I(U1:2)
0A
5A
10A
15A
20A
25A
30A
Rds (on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=10(V), ID=25(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 14.000 13.997 -0.02
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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V_V1
0V 4V 8V 12V 16V 20V
I(U1:2)
0A
10A
20A
30A
40A
50A
VGS
0
V1
U12SK2886
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS = 2.5V
6
10
3
5
8
3.5
4.5
3.75
4.25
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
9
Capacitance Characteristics
Simulation result
Comparison table
VDS (V) Cbd (pF)
%Error Measurement Simulation
0.1 1900.000 1884.100 -0.84
0.2 1800.000 1814.000 0.78
0.5 1645.000 1616.600 -1.73
1 1450.000 1451.400 0.10
2 1200.000 1212.000 1.00
5 910.000 892.160 -1.96
10 705.000 680.700 -3.45
20 488.000 509.500 4.41
50 340.000 342.390 0.70
60 310.000 315.950 1.92
Simulation
Measurement
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
10
Time*1mA
0 20n 40n 60n 80n 100n
V(W1:3)
0V
4V
8V
12V
16V
20V
D1dmod ID
45A
VDD
40V
0
-
+W1
ION = 0IOFF = 1mAW
U12SK2886
IGTD = 0
TF = 10n
PW = 10mPER = 1
I1 = 0I2 = 1m
TR = 10n
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=40(V), VGS=10(V), ID=45(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 11.700 11.622 -0.67
Qgd nC 23.385 22.366 -4.36
Qg nC 66.000 65.965 -0.05
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
11
Time
1.6us 1.8us 2.0us 2.2us 2.4us 2.6us
V(U1:2)/2.5 V(U1:1)
0V
5V
10V
15V
L130nH
1 2
U12SK2886
V1TD = 2u
TF = 4nPW = 5uPER = 500u
V1 = 0
TR = 4n
V2 = 20
VDD
25
0
RL
1.0
L2
50nH
12
R2
50
R1
50
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit1
Test condition: VDD=25(V), VGS=0/10(V), ID=25(A), RG=50, RL=1
Parameter Unit Measurement Simulation %Error
ton ns 70.000 70.675 0.96
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
12
U1D2SK2886_P
C1
100p
K
D1
R11
F1
FG1
V(N00091,N00063)-V(N00022,N00019)
GVALUE
OUT+OUT-
IN+IN-
D2
R2300
-+
+
-
E1
E
+
-
+
-
S1 SVON = 100mVVOFF = 90mVROFF = 50MEGRON = 1m
0
A
Equivalent Circuit
Circuit Configuration
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
13
V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V -1.6V
I(VDS)
100mA
1.0A
10A
100A
0
VDSU12SK2886
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
14
Comparison Graph
Simulation result
Comparison table
IDR (A) -VDS (V)
%Error Measurement Simulation
0.3 0.653 0.654 0.15
0.5 0.672 0.672 -0.01
1 0.702 0.698 -0.57
2 0.727 0.728 0.14
5 0.779 0.781 0.26
10 0.839 0.843 0.48
20 0.930 0.939 0.97
50 1.185 1.174 -0.93
100 1.530 1.516 -0.93
125 1.665 1.678 0.78
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Time
0.88us 0.96us 1.04us 1.12us 1.20us 1.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 0ns
TF = 10nsPW = 1usPER = 100us
V1 = -9.4V
TR = 10ns
V2 = 10.7V
R1
50
U1D2SK2886_P
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 28.800 28.661 -0.48
trb ns 105.000 104.667 -0.32
trr ns 133.800 133.328 -0.35
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Reverse Recovery Characteristics Reference
trj = 28.8(ns)
trb = 105(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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V_VGS
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
VGS
0
R1
1G
U12SK2886
ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Zener Voltage Characteristics Reference
IZ = 1(mA)
VZ =22.9(V) at IZ=1.09mA
Measurement